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Aixtron Se patents

Recent patent applications related to Aixtron Se. Aixtron Se is listed as an Agent/Assignee. Note: Aixtron Se may have other listings under different names/spellings. We're not affiliated with Aixtron Se, we're just tracking patents.

ARCHIVE: New 2018 2017 2016 2015 2014 2013 2012 2011 2010 2009 | Company Directory "A" | Aixtron Se-related inventors

Device for depositing a layer on a substrate

A device for depositing a layer on a substrate includes a process chamber and a gas inlet element. The substrate is moved in a movement direction in the process chamber during a coating process. The gas inlet element has a first, second and third gas distribution chamber with a first,... Aixtron Se

Method for separating a carbon structure from a seed structure

A method is employed to separate a carbon structure, which is disposed on a seed structure, from the seed structure. In the method, a carbon structure is deposited on the seed structure in a process chamber of a CND reactor. The substrate comprising the seed structure (2) and the carbon... Aixtron Se

Cvd or pvd reactor for coating large-area substrates

A CVD or PVD coating device comprises a housing and a gas inlet organ secured to the housing via a retaining device, the gas inlet organ having a gas outlet surface with gas outlet openings. The retaining device is only secured at its horizontal edge to the housing so as... Aixtron Se

Formation of a layer on a semiconductor substrate

Described herein are techniques for forming an epitaxial III-V layer on a substrate. In a pre-clean chamber, a native oxygen layer may be replaced with a passivation layer by treating the substrate with a hydrogen plasma (or products of a plasma decomposition). In a deposition chamber, the temperature of the... Aixtron Se

Exhaust manifold in a cvd reactor

Described herein is an exhaust manifold (1) comprising suction opening (2), a gas extraction chamber (3), an intermediate space (9), a gas collection chamber (5) and a suction line (4). A flow-impeding structure may be present within the intermediate space (9). The flow impeding structure may exert a flow resistance... Aixtron Se

Substrate holding device

A device for holding at least one substrate in a process chamber of a CVD or PVD reactor includes a flat upper side on which at least one bearing area for the at least one substrate is located. An outline contour line corresponding to the outline contour of the substrate... Aixtron Se

Substrate carrier that carries a substrate on each of two broad sides of the substrate carrier that face away from each other

A substrate carrier is configured to be arranged in a CVD or PVD reactor, in particular for the deposition of carbon nanotubes or graphene. The substrate carrier has a first broadside surface and a second broadside surface facing away from the first broad-side surface. The first broadside surface and the... Aixtron Se

Coated flat component in a cvd reactor

A CVD reactor includes a flat component with two broad sides extending parallel to each other and spaced apart from each other by a thickness. An outer edge of each broad side transitions without kinks into an edge of an outer peripheral side of the flat component. The thickness of... Aixtron Se

Transfer module for a multi-module apparatus

A transfer module for a multi-module apparatus may include a) a plurality of facets, wherein a facet of said plurality comprises a port configured to hold a module; and b) at least one robot arm configured to move an object to and from the module through said port via a... Aixtron Se

Device and generating a vapor for a cvd or pvd device from multiple liquid or solid source materials

In a method and a device for generating vapor for a CVD or PVD device, liquid or solid particles of a first source material are fed into a first heat transfer body via a first feed line. The first heat transfer body vaporizes the particles into a first vapor, which... Aixtron Se

Device for depositing nanotubes

A device is provided for depositing carbonaceous structures, for example layers in the form of nanotubes or graphene on a substrate, which is supported by a substrate support disposed in a process chamber housing. A process gas can be delivered onto the substrate through gas outlet openings of a gas... Aixtron Se

Device and determining the concentration of a vapor by means of an oscillating body sensor

A device and a method determines the concentration of a vapor in a volume, in particular for determining or controlling the mass flow of the vapor being conveyed through the volume by a carrier gas. The device comprises a sensor, which supplies a sensor signal that is dependent on the... Aixtron Se

Heating device

The invention relates to a device with at least one first electrically conductive contact plate (11) and with at least one second electrically conductive contact plate (12), and with a plurality of electrically parallel-connected first heating elements (1 to 9) each with at least one resistance heating unit (1.3 to... Aixtron Se

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This listing is an abstract for educational and research purposes is only meant as a recent sample of applications filed, not a comprehensive history. is not affiliated or associated with Aixtron Se in any way and there may be associated servicemarks. This data is also published to the public by the USPTO and available for free on their website. Note that there may be alternative spellings for Aixtron Se with additional patents listed. Browse our Agent directory for other possible listings. Page by