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Applied Materials Inc patents


Recent patent applications related to Applied Materials Inc. Applied Materials Inc is listed as an Agent/Assignee. Note: Applied Materials Inc may have other listings under different names/spellings. We're not affiliated with Applied Materials Inc, we're just tracking patents.

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Polishing articles and integrated system and methods for manufacturing chemical mechanical polishing articles

A polishing article manufacturing system includes a feed section and a take-up section, the take-up section comprising a supply roll having a polishing article disposed thereon for a chemical mechanical polishing process, a print section comprising a plurality of printheads disposed between the feed section and the take-up section, and... Applied Materials Inc

Rare-earth oxide based chamber material

An article comprises a plasma resistant ceramic material comprising 40-60 mol % of Y2O3, 35-50 mol % of ZrO2, and 10-20 mol % of Al2O3.... Applied Materials Inc

Rare-earth oxide based chamber material

An article comprises a plasma resistant ceramic material comprising 80-90 mol % of Y2O3, over 0 mol % to 20 mol % of ZrO2, and 10-20 mol % of Al2O3.... Applied Materials Inc

Pulse shape controller for sputter sources

Embodiments presented herein relate to a pulse control system for a substrate processing system. The pulse control system includes a power source, a system controller, and a pulse shape controller. The pulse shape controller is coupled to the power source and in communication with the system controller. The pulse shape... Applied Materials Inc

Thermally optimized rings

A process kit ring for use in a plasma processing system is disclosed herein. The process kit ring includes an annular body and one or more hollow inner cavities. The annular body is formed from a plasma resistant material. The annular body has an outer diameter greater than 200 mm.... Applied Materials Inc

Model based lamp background filtration of stray radiation for pyrometry

The embodiments described herein generally relate to systems for noise compensation for proper temperature detection in thermal processing chambers and devices for achieving the same. In one embodiment, a system is disclosed herein. The system includes a processing chamber, a substrate, a pyrometer, and a controller. The processing chamber is... Applied Materials Inc

Field guided post exposure bake application for photoresist microbridge defects

Embodiments described herein generally relate to methods for mitigating patterning defects. More specifically, embodiments described herein relate to utilizing field guided post exposure bake processes to mitigate microbridge photoresist defects. An electric field may be applied to a substrate being processed during a post exposure bake process. Photoacid generated as... Applied Materials Inc

Critical methodology in vacuum chambers to determine gap and leveling between wafer and hardware components

Implementations described herein generally relate to methods for leveling a component above a substrate. In one implementation, a test substrate is placed on a substrate support inside of a processing chamber. A component, such as a mask, is located above the substrate. The component is lowered to a position so... Applied Materials Inc

Method and controlling gas flow to a process chamber

Methods and apparatus for controlling gas flow to a process chamber are disclosed herein. In some embodiments, a processing system includes a first process chamber having a first gas input; a first gas break disposed upstream of the first gas input; a first adjustable valve disposed upstream of the first... Applied Materials Inc

Inductively coupled plasma chamber having a multi-zone showerhead

Apparatus for plasma processing are provided herein. In some embodiments, a process chamber includes: a chamber body having a processing volume within; a dielectric adapter ring disposed atop the chamber body; a multi-zone showerhead disposed atop the dielectric adapter ring to provide process gas to the processing volume; and an... Applied Materials Inc

Process chamber having tunable showerhead and tunable liner

Process chambers having a tunable showerhead and a tunable liner are disclosed herein. In some embodiments, a processing chamber includes a showerhead; a chamber liner; a first impedance circuit coupled to the showerhead to tune an impedance of the showerhead; a second impedance circuit coupled to the chamber liner to... Applied Materials Inc

Method of selective epitaxy

Embodiments of the present disclosure generally relate to methods for trench filling of high quality epitaxial silicon-containing material without losing selectivity of growth to dielectrics such as silicon oxides and silicon nitrides. The methods include epitaxially growing a silicon-containing material within a trench formed in a dielectric layer by exposing... Applied Materials Inc

Dual endpoint detection for advanced phase shift and binary photomasks

The present invention provides a method and apparatus for etching a photomask substrate with enhanced process monitoring, for example, by providing for optical monitoring at certain regions of the photomask to obtain dual endpoints, e.g., etch rate or thickness loss of both a photoresist layer and an absorber layer. By... Applied Materials Inc

Support ring with encapsulated light barrier

Embodiments described herein provide a thermal processing apparatus with a heat source and a rotating substrate support opposite the heat source, the rotating substrate support comprising a support member with a light blocking member. The light blocking member may be an encapsulated component, or may be movably disposed inside the... Applied Materials Inc

Process kit erosion and service life prediction

Embodiments of the present disclosure provide a method, system, and computer program product for monitoring a service life of a chamber component. In one example, the method includes receiving one or more power measurements of a semiconductor processing chamber from one or more sensors positioned about the semiconductor processing chamber.... Applied Materials Inc

Apparatus and measurement of the thermal performance of an electrostatic wafer chuck

An apparatus and method are described for measuring the thermal performance of a wafer chuck, such as an electrostatic chuck. In one example, the apparatus ha a chamber, a base to support a wafer chuck in the chamber, a heater to heat the chuck, a window through the exterior of... Applied Materials Inc

Thermal profile monitoring wafer and methods of monitoring temperature

Thermal monitors comprising a substrate with at least one camera position on a bottom surface thereof, a wireless communication controller and a battery. The camera has a field of view sufficient to produce an image of at least a portion of a wafer support, the image representative of the temperature... Applied Materials Inc

3d ctf integration using hybrid charge trap layer of sin and self aligned sige nanodot

Provided are an improved memory device and a method of manufacturing the same. In one embodiment, the memory device may include a vertical stack of alternating oxide layer and nitride layer, the vertical stack having a channel region formed therethrough, a plurality of nanostructures selectively formed on nitride layer of... Applied Materials Inc

Positive active material for rechargeable lithium battery

Disclosed are a cathode active material for a lithium secondary battery, and a lithium secondary battery including the same. The disclosed cathode active material includes a core including a compound represented by Formula 1; and a shell including a compound represented by Formula 2, in which the core and the... Applied Materials Inc

Aluminum fluoride mitigation by plasma treatment

Implementations described herein generally relate to methods and apparatus for in-situ removal of unwanted deposition buildup from one or more interior surfaces of a semiconductor substrate-processing chamber. In one implementation, the method comprises forming a reactive fluorine species from a fluorine-containing cleaning gas mixture. The method further comprises delivering the... Applied Materials Inc

Gas cooled substrate support for stabilized high temperature deposition

Embodiments of the present disclosure provides apparatus and method for stabilizing substrate temperature by flowing a flow of cooling gas to an inlet of cooling channels in a substrate support, receiving the flow of cooling gas from an outlet of the cooling channel using a heat exchanger, and releasing the... Applied Materials Inc

Surface treatment for improvement of particle performance

Implementations of the disclosure provide a surface treatment process for chamber components. In one implementation, the chamber component includes a crystalline body comprising machined surfaces including at least a reflowed surface layer formed in a plasma treatment chamber by placing the body on a pedestal disposed within the plasma chamber,... Applied Materials Inc

Methods for depositing low k and low wet etch rate dielectric thin films

Methods for the formation of SiCN, SiCO and SiCON films comprising cyclical exposure of a substrate surface to a silicon-containing gas, a carbon-containing gas and a plasma. Some embodiments further comprise the addition of an oxidizing agent prior to at least the plasma exposure.... Applied Materials Inc

Photo-assisted deposition of flowable films

A method and apparatus for forming a flowable film are described. The method includes providing an oxygen free precursor gas mixture to a processing chamber containing a substrate. The oxygen free precursor gas is activated by exposure to UV radiation in the processing chamber. Molecular fragments resulting from the UV... Applied Materials Inc

Low-temperature atomic layer deposition of boron nitride and bn structures

Methods of the disclosure include a BN ALD process at low temperatures using a reactive nitrogen precursor, such as thermal N2H4, and a boron containing precursor, which allows for the deposition of ultra thin (less than 5 nm) films with precise thickness and composition control. Methods are self-limiting and provide... Applied Materials Inc

Methods of etching films comprising transition metals

Provided are methods for etching films comprising transition metals. Certain methods involve activating a substrate surface comprising at least one transition metal, wherein activation of the substrate surface comprises exposing the substrate surface to heat, a plasma, an oxidizing environment, or a halide transfer agent to provide an activated substrate... Applied Materials Inc

Precision screen printing with sub-micron uniformity of metallization materials on green sheet ceramic

Precision screen printing is described that is capable of sub-micron uniformity of the metallization materials that are printed on green sheet ceramic. In some examples, puck is formed with electrical traces by screen printing a paste that contains metal on a ceramic green sheet in a pattern of electrical traces... Applied Materials Inc

Thin film battery device and formation

A thin film device. The thin film device may include: an active device region; a thin film encapsulant disposed adjacent to the active device region and encapsulating at least a portion of the active device region. The thin film encapsulant may include an outer layer, wherein the outer layer is... Applied Materials Inc

Ion assisted deposition top coat of rare-earth oxide

A chamber component comprises a body, a first protective layer and a conformal second protective layer over the first protective layer. The first protective layer comprises a plasma resistant ceramic, has a thickness of greater than approximately 50 microns and comprises a plurality of cracks and pores. The conformal second... Applied Materials Inc

Holding arrangement for supporting a substrate carrier and a mask carrier during layer deposition in a processing chamber, depositing a layer on a substrate, and aligning a substrate carrier supporting a substrate and a mask carrier

A holding arrangement for supporting a substrate carrier and a mask carrier during layer deposition in a processing chamber is provided. The holding arrangement includes two or more alignment actuators connectable to at least one of the substrate carrier and the mask carrier, wherein the holding arrangement is configured to... Applied Materials Inc

Extreme ultraviolet mask blank with multilayer absorber and manufacture

Extreme ultraviolet (EUV) mask blanks, methods for their manufacture and production systems therefor are disclosed. The EUV mask blanks comprise a multilayer stack of absorber layers on the capping layer, the multilayer stack of absorber layers including a plurality of absorber layer pairs.... Applied Materials Inc

Extreme ultraviolet mask blank with alloy absorber and manufacture

Extreme ultraviolet (EUV) mask blanks, methods for their manufacture and production systems therefor are disclosed. The EUV mask blanks comprise a an absorber layer on the capping layer, the absorber layer made from an alloy of at least two absorber materials.... Applied Materials Inc

Cvd silicon monolayer formation method and gate oxide ald formation on semiconductor materials

Methods for depositing silicon include cycling dosing between 1 and 100 cycles of one or more first chlorosilane precursors on a III-V surface at a temperature between 300° C. and 500° C. to form a first layer. Methods may include desorbing chlorine from the first layer by treating the first... Applied Materials Inc

Silicon germanium selective oxidation process

Implementations described herein relate to selective oxidation processes for semiconductor device manufacturing. In one implementation, the process includes delivering a substrate having a semiconductor device comprising at least a silicon material and a silicon germanium material formed thereon to a process chamber. Process variables are determined based upon the germanium... Applied Materials Inc

Performing decoupled plasma fluorination to reduce interfacial defects in film stack

Embodiments of the present disclosure generally relate to methods for forming a dielectric material on a substrate, and more specifically, to methods for forming a high-k dielectric layer in an electronic device. In one embodiment, the method includes depositing a high-k dielectric layer on a substrate and fluorinating the deposited... Applied Materials Inc

02/01/18 / #20180033621

Method of forming structures with v shaped bottom on silicon substrate

The present disclosure generally relate to methods of processing a substrate in an epitaxy chamber. The method includes applying a passivating agent containing antimony to portions of a silicon substrate exposed through trenches formed in a dielectric layer on the silicon substrate, while applying the passivating agent containing antimony, exposing... Applied Materials Inc

02/01/18 / #20180033643

Methods and using alkyl amines for the selective removal of metal nitride

Improved methods and apparatus for removing a metal nitride selectively with respect to exposed or underlying dielectric or metal layers are provided herein. In some embodiments, a method of etching a metal nitride layer atop a substrate, includes: (a) oxidizing a metal nitride layer to form a metal oxynitride layer... Applied Materials Inc

02/01/18 / #20180033652

Flow controlled liner having spatially distributed gas passages

Embodiments of the present disclosure provide a liner assembly including a plurality of individually separated gas passages. The liner assembly enables tenability of flow parameters, such as velocity, density, direction and spatial location, across a substrate being processed. The processing gas across the substrate being processed may be specially tailored... Applied Materials Inc

02/01/18 / #20180033659

Gas purge outgassing control

Embodiments disclosed herein generally relate to a system, method, and apparatus for controlling substrate outgassing such that hazardous gasses are eliminated from a surface of a substrate after a III-V epitaxial growth process or an etch clean process, and prior to additional processing. An oxygen containing gas is flowed to... Applied Materials Inc

02/01/18 / #20180033667

Wafer edge measurement and control

Devices and methods are provided for positioning and/or rotating a substrate without solid contact, such as by floating the wafer on a thin layer of gas. Since there is no solid contact with components of a processing chamber, features on the wafer are used to determine wafer position and rotational... Applied Materials Inc

02/01/18 / #20180033673

Substrate support with in situ wafer rotation

Embodiments of methods and apparatus for processing a substrate are provided herein. In some embodiments, a substrate support includes a base having a first support surface designed to support a substrate having a given width; a plurality of arcuate slots formed through the base; a corresponding plurality of lift pins... Applied Materials Inc

02/01/18 / #20180033689

Seamless trench fill using deposition/etch techniques

Methods for filing a feature on a substrate surface comprising depositing a conformal nitride film on the substrate surface and at least one feature on the surface, oxidizing a portion of the nitride film to form an asymmetric oxide film on top of the nitride film and etching the oxide... Applied Materials Inc

02/01/18 / #20180033872

Method of epitaxial growth shape control for cmos applications

The present disclosure generally relate to methods of processing a substrate in an epitaxy chamber. The method includes exposing a substrate having one or more fins to a group IV-containing precursor and a surfactant containing antimony to form an epitaxial film over sidewalls of the one or more fin structures,... Applied Materials Inc

02/01/18 / #20180033873

Method of uniform channel formation

Embodiments described herein generally provide a method and apparatus to form semiconductor devices. Specifically, embodiments describe an apparatus and methods of forming channels in sub-5 nm node FinFETS. The method provides for various processing steps to deposit a dielectric layer over a substrate. The method continues by etching a trench... Applied Materials Inc

02/01/18 / #20180034240

Failure detection of laser diodes

Embodiments described herein generally relate to an apparatus and method for performing photolithography processes. More particularly, embodiments described herein generally relate to an apparatus and method for the digital control of optical-coupled solid state relays employed on a laser diode. Digital control of the optical-coupled solid state relays may allow... Applied Materials Inc

01/25/18 / #20180023191

Fine leveling of large carousel based susceptor

Pedestal assemblies with a thermal barrier plate, a torque plate and at least one kinematic mount to change a plane formed by the thermal barrier plate are described. Susceptor assemblies and processing chambers incorporating the pedestal assemblies are also described. Methods of leveling a susceptor to form parallel planes between... Applied Materials Inc

01/25/18 / #20180023193

A high temperature clean

Embodiments disclosed herein generally relate to systems and methods to prevent free radical damage to sensitive components in a process chamber and optimizing flow profiles. The processing chamber utilizes a cover substrate on lift pins and an inert bottom purge flow to shield the substrate support from halogen reactants. During... Applied Materials Inc

01/25/18 / #20180023214

Heating modulators to improve epi uniformity tuning

Embodiments disclosed herein generally related to a processing chamber, and more specifically a heat modulator assembly for use in a processing chamber. The heat modulator assembly includes a heat modulator housing and a plurality of heat modulators. The heat modulator housing includes a housing member defining a housing plane, a... Applied Materials Inc

01/25/18 / #20180024436

Active eye-to-eye with alignment by x-y capacitance measurement

Embodiments of the present disclosure generally relate to systems and methods for performing photolithography processes. In one embodiment, a photolithography system includes a plurality of image projection systems each having an extendable lens, and a plate having a plurality of openings. Each extendable lens is configured to be extended through... Applied Materials Inc

01/25/18 / #20180024441

Twisted kaleido

Implementations disclosed herein generally relate to a light pipe, or kaleido, for homogenizing light such that the light is uniform once the light exits the light pipe. By reflecting the light inside the light pipe, light uniformity is increased. In one implementation, a light pipe for an image projection apparatus... Applied Materials Inc

01/25/18 / #20180024444

Piecewise alignment modeling method

Embodiments disclosed herein generally relate to adjusting exposure parameters of a substrate in response to an overlay error. The method includes partitioning the substrate into one or more sections. Each section corresponds to an image projection system. A total overlay error of a first layer deposited on the substrate is... Applied Materials Inc

01/25/18 / #20180024447

Cleaning solution mixing system with ultra-dilute cleaning solution and operation thereof

Disclosed are a cleaning solution mixing system, a tool and a method of operation thereof, including an ultrapure water source for providing ultrapure water; an ammonia filter for filtering ammonia in gas form; a hydrogen peroxide filter for filtering hydrogen peroxide in gas form; an ammonia re-gas membrane for dissolving... Applied Materials Inc

01/25/18 / #20180024448

Focus centering digital lithography

Embodiments disclosed herein generally relate to adjusting a focus setting for a digital lithography system. The method includes scanning a surface of a photoresist. The photoresist is formed on a substrate. A focus setting for the digital lithography system is determined. A plurality of exposure location on the photoresist are... Applied Materials Inc

01/25/18 / #20180024573

Methods for monitoring a flow controller coupled to a process chamber

Methods and apparatus for in-situ calibration of a flow controller are provided herein. In some embodiments, a method of flowing a gas includes providing a flow controller configured to provide a first gas at a first value of a flow rate based on a calculated first relationship determined by using... Applied Materials Inc

01/25/18 / #20180025890

Plasma uniformity control by gas diffuser hole design

Embodiments of a method of depositing a thin film on a substrate is provided that includes placing a substrate on a substrate support that is mounted in a processing region of a processing chamber, flowing a process fluid through a plurality of gas passages in a diffuser plate toward the... Applied Materials Inc

01/25/18 / #20180025895

Physical vapor deposition (pvd) plasma energy control per dynamic magnetron control

A method, apparatus and system for controlling the processing of a substrate within a process chamber are described herein. In some embodiments, a method of controlling a substrate process within a process chamber includes determining a position of a moveable magnetron in the process chamber relative to a reference location... Applied Materials Inc

01/25/18 / #20180025900

Alkali metal and alkali earth metal reduction

Methods of removing contamination from the surface of a substrate are described. The etch selectively removes alkali metals and alkali earth metals from substrates. The alkali metals may include sodium, lithium, rubidium or potassium and the alkali earth metals may include calcium. For example, the etch may remove contaminants by... Applied Materials Inc

01/25/18 / #20180025907

Deposition of flowable silicon-containing films

Methods for seam-less gapfill comprising forming a flowable film by exposing a substrate surface to a silicon-containing precursor and a co-reactant are described. The silicon-containing precursor has at least one akenyl or alkynyl group. The flowable film can be cured by any suitable curing process to form a seam-less gapfill.... Applied Materials Inc

01/25/18 / #20180025914

Methods for high temperature etching a material layer using protection coating

Methods for etching a bottom anti-reflective coating (BARC) and/or an anti-reflective coating (ARC) and/or a dielectric anti-reflective coating (DARC) to form high aspect ratio features using an etch process are provided. The methods described herein advantageously facilitate profile and dimension control of features with high aspect ratios through a proper... Applied Materials Inc

01/25/18 / #20180025924

Methods and rapidly cooling a substrate

Methods and apparatus for changing the temperature of a substrate are provided. In some embodiments, a method includes: placing a substrate onto a support surface of a substrate support disposed within an inner volume of a cooling chamber; moving at least one of the substrate support or a plate disposed... Applied Materials Inc

01/25/18 / #20180025931

Processed wafer as top plate of a workpiece carrier in semiconductor and mechanical processing

A processed wafer is described that may be used as a workpiece carrier in semiconductor and mechanical processing. In some examples, the workpiece carrier includes a substrate, an electrode formed on the substrate to carry an electric charge to grip a workpiece, a through hole through the substrate and connected... Applied Materials Inc

01/25/18 / #20180026054

Hybrid high-k dielectric material film stacks comprising zirconium oxide utilized in display devices

Embodiments of the disclosure generally provide methods of forming a hybrid film stack that may be used as a capacitor layer or a gate insulating layer with a high dielectric constant as well as film qualities for display applications. In one embodiment, a thin film transistor structure include gate, source... Applied Materials Inc

01/25/18 / #20180026055

Hybrid high-k dielectric material film stacks comprising zirconium oxide utilized in display devices

Embodiments of the disclosure generally provide methods of forming a hybrid film stack that may be used as a capacitor layer or a gate insulating layer with high dielectric constant as well as film qualities for display applications. In one embodiment, a thin film transistor structure include source and drain... Applied Materials Inc

01/18/18 / #20180019119

Drying high aspect ratio features

Methods of drying a semiconductor substrate may include applying a drying agent to a semiconductor substrate, where the drying agent wets the semiconductor substrate. The methods may include heating a chamber housing the semiconductor substrate to a temperature above an atmospheric pressure boiling point of the drying agent until a... Applied Materials Inc

01/18/18 / #20180019119

Drying high aspect ratio features

Methods of drying a semiconductor substrate may include applying a drying agent to a semiconductor substrate, where the drying agent wets the semiconductor substrate. The methods may include heating a chamber housing the semiconductor substrate to a temperature above an atmospheric pressure boiling point of the drying agent until a... Applied Materials Inc

Patent Packs
01/18/18 / #20180016677

An improved substrate support

An apparatus for processing substrates is described. More particularly, embodiments of the present disclosure relate to an improved substrate support for heating and cooling substrates using turbulent flow during processing. By creating a turbulent flow within the channels, a greater amount of heat is transferred in a shorter period of... Applied Materials Inc

01/18/18 / #20180016678

Multi-layer coating with diffusion barrier layer and erosion resistant layer

A multi-layer coating for a surface of an article comprising a diffusion barrier layer and an erosion resistant layer. The diffusion barrier layer may be a nitride film including but not limited to TiNx, TaNx, Zr3N4, and TiZrxNy. The erosion resistant layer may be a rare oxide film including but... Applied Materials Inc

01/18/18 / #20180016705

Method and precleaning a substrate surface prior to epitaxial growth

Embodiments of the present invention generally relate to methods for removing contaminants and native oxides from substrate surfaces. The methods generally include removing contaminants disposed on the substrate surface using a plasma process, and then cleaning the substrate surface by use of a remote plasma assisted dry etch process.... Applied Materials Inc

01/18/18 / #20180017447

Emi/rf shielding of thermocouples

Embodiments disclosed herein generally relate to a temperature sensor disposed in an apparatus. In many semiconductor, liquid crystal display, solar panel or organic light emitting display fabrication processes, RF power is utilized to either ignite a plasma within the processing chamber or to provide supplemental energy to the process. Temperature... Applied Materials Inc

01/18/18 / #20180017781

Frustrated cube assembly

The present disclosure generally relates to frustrated cube assemblies having a first prism having a first surface, a second surface, and a first hypotenuse, and a second prism having a third surface, a fourth surface, and a second hypotenuse. The first and second hypotenuses face one another and are separated... Applied Materials Inc

01/18/18 / #20180017876

Micro led array as illumination source

Embodiments of the present disclosure generally relate to apparatuses and systems for performing photolithography processes. More particularly, compact illumination tools for projecting an image onto a substrate are provided. In one embodiment, an illumination tool includes a microLED array including one or more microLEDs. Each microLED produces at least one... Applied Materials Inc

01/18/18 / #20180019104

Substrate processing chamber component assembly with plasma resistant seal

Embodiments disclosed herein relate to a substrate processing chamber component assembly with plasma resistant seal. In one embodiment, the semiconductor processing chamber component assembly includes a first semiconductor processing chamber component, a second semiconductor processing component, and a sealing member. The sealing member has a body formed substantially from polytetrafluoroethylene... Applied Materials Inc

01/18/18 / #20180019108

Sputtering target with backside cooling grooves

Implementations of the present disclosure relate to a sputtering target for a sputtering chamber used to process a substrate. In one implementation, a sputtering target for a sputtering chamber is provided. The sputtering target comprises a sputtering plate with a backside surface having radially inner, middle and outer regions and... Applied Materials Inc

01/18/18 / #20180019116

Self-limiting and saturating chemical vapor deposition of a silicon bilayer and ald

Embodiments described herein provide a self-limiting and saturating Si—Ox bilayer process which does not require the use of a plasma or catalyst and that does not lead to undesirable substrate oxidation. Methods of the disclosure do not produce SiO2, but instead produce a saturated Si—Ox film with —OH termination to... Applied Materials Inc

01/18/18 / #20180019121

Method and material for cmos contact and barrier layer

The present disclosure generally relate to methods for forming an epitaxial layer on a semiconductor device, including a method of forming a tensile-stressed silicon antimony layer. The method includes heating a substrate disposed within a processing chamber, wherein the substrate comprises silicon, and exposing a surface of the substrate to... Applied Materials Inc

01/18/18 / #20180019148

Locally heated multi-zone substrate support

Embodiments of the present disclosure provide an electrostatic chuck (ESC) having azimuthal temperature control. In one embodiment, the electrostatic chuck includes an insulating base, an encapsulating member disposed on the insulating base, a first plurality of electrodes and a second plurality of electrodes disposed at a first elevation in the... Applied Materials Inc

01/18/18 / #20180019399

Substrate imprinted with a pattern for forming isolated device regions

An example provides a method for forming an apparatus including a substrate imprinted with a pattern for forming isolated device regions. A method may include imprinting an unpatterned area of a substrate with a pattern to form a patterned substrate having a plurality of recessed regions at a first level... Applied Materials Inc

01/11/18 / #20180009079

Multi-layered nano-fibrous cmp pads

The present disclosure relates generally to a polishing article, and apparatus and methods of chemical mechanical polishing substrates using the polishing article. In some embodiments, the polishing article, such as a polishing pad, includes multiple layers in which one or more layers (i.e., at least the top layer) includes a... Applied Materials Inc

01/11/18 / #20180010234

Ion beam sputtering with ion assisted deposition for coatings on chamber components

An article comprises a body and a conformal protective layer on at least one surface of the body. The conformal protective layer is a plasma resistant rare earth oxide film having a thickness of less than 1000 μm, wherein the plasma resistant rare earth oxide is selected from a group... Applied Materials Inc

01/11/18 / #20180010235

Ion beam sputtering with ion assisted deposition for coatings on chamber components

An article comprises a body and a conformal protective layer on at least one surface of the body. The conformal protective layer is a plasma resistant rare earth oxide film having a thickness of less than 1000 μm, wherein the plasma resistant rare earth oxide film is selected from a... Applied Materials Inc

Patent Packs
01/11/18 / #20180010242

Deposition ring and electrostatic chuck for physical vapor deposition chamber

Embodiments of the invention generally relate to a process kit for a semiconductor processing chamber, and a semiconductor processing chamber having a kit. More specifically, embodiments described herein relate to a process kit including a deposition ring and a pedestal assembly. The components of the process kit work alone, and... Applied Materials Inc

01/11/18 / #20180011331

Light wave separation lattices and methods of forming light wave separation lattices

Light wave separation lattices and methods of formation are provided herein. In some embodiments, a light wave separation lattice includes a first layer having the formula ROxNy, wherein the first layer has a first refractive index; and a second layer, different from the first layer, disposed atop the first layer,... Applied Materials Inc

01/11/18 / #20180012732

Apparatus for depositing metal films with plasma treatment

Embodiments of a gas delivery apparatus for use in a radio frequency (RF) processing apparatus are provided herein. In some embodiments, a gas delivery apparatus for use in a radio frequency (RF) processing apparatus includes: a conductive gas line having a first end and a second end; a first flange... Applied Materials Inc

01/11/18 / #20180012790

Substrate carrier

Embodiments of substrate carriers and method of making the same are provided herein. In some embodiments, a substrate carrier includes a substantially planar body; and a plurality of holding elements arranged on a surface of the substantially planar body, wherein the plurality of holding elements are configured to hold a... Applied Materials Inc

01/11/18 / #20180013097

Fluorine-containing plasma polymerized hmdso for oled thin film encapsulation

Methods for forming an OLED device are described. An encapsulation structure having organic buffer layer sandwiched between barrier layers is deposited over an OLED structure. The buffer layer is formed with a fluorine-containing plasma. The second barrier layer is then deposited over the buffer layer. Additionally, to ensure good adhesion,... Applied Materials Inc

01/04/18 / #20180001478

Methods and systems providing misalignment correction in robots

Methods of correcting positional misalignment of blades in robots, such as dual-bladed robots, are described. The methods include, in one or more embodiments, a robot including moveable arms and an end effector attached to one of the moveable arms, a flag disposed on one of the moveable arms or the... Applied Materials Inc

01/04/18 / #20180002830

Device to increase deposition uniformity in spatial ald processing chamber

Susceptor assemblies comprising a susceptor with a top surface with a plurality of recesses and a bottom surface are described. A heater is positioned below the susceptor to heat the susceptor. A shield is positioned between the bottom surface of the susceptor and the heater. The shield increases deposition uniformity... Applied Materials Inc

01/04/18 / #20180004094

Apparatus for post exposure bake

Embodiments described herein relate to methods and apparatus for performing immersion field guided post exposure bake processes. Embodiments of apparatus described herein include a chamber body defining a processing volume. Electrodes may be disposed adjacent the process volume and process fluid is provided to the process volume via a plurality... Applied Materials Inc

01/04/18 / #20180004099

Method to reduce line waviness

Embodiments disclosed herein relate to an exposure pattern alteration software application which manipulates exposure polygons having lines with angles substantially close to angles of symmetry of a hex close pack arrangement, which suffer from long jogs. Long jogs present themselves as high edge placement error regions. As such, the exposure... Applied Materials Inc

01/04/18 / #20180005842

Chemical mechanical polishing automated recipe generation

A method for polishing dies locations on a substrate with a polishing module. A thickness at selected locations on the substrate is premeasured at a metrology station, each location corresponding to a location of a single die. The thickness obtained by the metrology station for the selected locations of the... Applied Materials Inc

01/04/18 / #20180005850

Selective etch using material modification and rf pulsing

Semiconductor systems and methods may include methods of performing selective etches that include modifying a material on a semiconductor substrate. The substrate may have at least two exposed materials on a surface of the semiconductor substrate. The methods may include forming a low-power plasma within a processing chamber housing the... Applied Materials Inc

01/04/18 / #20180005856

Quartz upper and lower domes

Embodiments of the invention relate to a dome assembly. The dome assembly includes an upper dome comprising a central window, and an upper peripheral flange engaging the central window at a circumference of the central window, wherein a tangent line on an inside surface of the central window that passes... Applied Materials Inc

01/04/18 / #20180005881

Methods of enhancing polymer adhesion to copper

A method of processing a semiconductor substrate includes: immersing a substrate in a first bath, wherein the substrate comprises a barrier layer, a conductive seed layer, and a patterned photoresist layer defining an opening; providing a first electric current between the conductive seed layer and a first anode disposed in... Applied Materials Inc

01/04/18 / #20180006083

Systems and methods for transfer of micro-devices

An apparatus for positioning micro-devices on a substrate includes one or more supports to hold a donor substrate and a destination substrate, an adhesive dispenser to deliver adhesive on micro-devices on the donor substrate, a transfer device including a transfer surface to transfer the micro-devices from the donor substrate to... Applied Materials Inc

12/28/17 / #20170368680

Dual robot including spaced upper arms and interleaved wrists and systems and methods including same

Robots including spaced upper arms are described. The robot includes first and second upper arms rotatable about a shoulder axis wherein the second upper arm is spaced from the first upper arm. The other robot components (first and second forearms, first and second wrist members, and first and second end... Applied Materials Inc

12/28/17 / #20170369993

Non-line of sight deposition of erbium based plasma resistant ceramic coating

Described herein is a method of depositing a plasma resistant ceramic coating onto a surface of a chamber component using a non-line-of-sight (NLOS) deposition process, such as atomic layer deposition (ALD) and chemical vapor deposition (CVD). The plasma resistant ceramic coating consists of an erbium containing oxide, an erbium containing... Applied Materials Inc

12/28/17 / #20170370001

Apparatus for susceptor temperature verification and methods of use

Apparatus and methods for processing a semiconductor wafer in which a sensor (e.g., a contact thermocouple) is positioned in the gas distribution assembly measures temperature and/or a film parameter before, during and/or after deposition are described.... Applied Materials Inc

12/28/17 / #20170370763

Methods, systems, and mass flow verification based on choked flow

Mass flow verification systems and apparatus may verify mass flow rates of mass flow controllers (MFCs) based on choked flow principles. These systems and apparatus may include a plurality of differently-sized flow restrictors coupled in parallel. A wide range of flow rates may be verified via selection of a flow... Applied Materials Inc

12/28/17 / #20170372899

Diamond like carbon layer formed by an electron beam plasma process

Methods for forming a diamond like carbon layer with desired film density, mechanical strength and optical film properties are provided. In one embodiment, a method of forming a diamond like carbon layer includes generating an electron beam plasma above a surface of a substrate disposed in a processing chamber, and... Applied Materials Inc

12/28/17 / #20170372919

Flowable amorphous silicon films for gapfill applications

Methods for seam-less gapfill comprising forming a flowable film by PECVD and curing the flowable film to solidify the film. The flowable film can be formed using a higher order silane and plasma. A UV cure, or other cure, can be used to solidify the flowable film.... Applied Materials Inc

12/28/17 / #20170372953

Cvd based oxide-metal multi structure for 3d nand memory devices

Implementations described herein generally relate to a method for forming a metal layer and to a method for forming an oxide layer on the metal layer. In one implementation, the metal layer is formed on a seed layer, and the seed layer helps the metal in the metal layer nucleate... Applied Materials Inc

12/28/17 / #20170372960

Self-aligned interconnects formed using subtractive techniques

A method of forming an interconnect structure for semiconductor or MEMS structures at a 10 nm Node (16 nm HPCD) down to 5 nm Node (7 nm HPCD), or lower, where the conductive contacts of the interconnect structure are fabricated using solely subtractive techniques applied to conformal layers of conductive... Applied Materials Inc








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