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Applied Materials Inc patents


Recent patent applications related to Applied Materials Inc. Applied Materials Inc is listed as an Agent/Assignee. Note: Applied Materials Inc may have other listings under different names/spellings. We're not affiliated with Applied Materials Inc, we're just tracking patents.

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Annealing apparatus using two wavelengths of radiation

A thermal processing apparatus and method in which a first laser source, for example, a CO2 emitting at 10.6 μm is focused onto a silicon wafer as a line beam and a second laser source, for example, a GaAs laser bar emitting at 808 nm is focused onto the wafer... Applied Materials Inc

Rare-earth oxide based coatings based on ion assisted deposition

A component for a semiconductor processing chamber includes a ceramic body having at least one surface with a first average surface roughness of approximately 8-16 micro-inches. The component further includes a conformal protective layer on at least one surface of the ceramic body, wherein the conformal protective layer is a... Applied Materials Inc

Common deposition platform, processing station, and operation thereof

An apparatus for depositing a thin film on a substrate is described. The apparatus includes a substrate support having an outer surface for guiding the substrate along a surface of the substrate support through a first vacuum processing region and at least one second vacuum processing region, a first deposition... Applied Materials Inc

Overlay error correction

A calibration curve for a wafer comprising a layer on a substrate is determined. The calibration curve represents a local parameter change as a function of a treatment parameter associated with a wafer exposure to a light. The local parameter of the wafer is measured. An overlay error is determined... Applied Materials Inc

Rare-earth oxide based erosion resistant coatings for semiconductor application

An article includes a body that is coated with a ceramic coating. The ceramic coating may include Y2O3 in a range between about 45 mol % to about 99 mol %, ZrO2 in a range between about 0 mol % to about 55 mol %, and Al2O3 in a range... Applied Materials Inc

Material deposition for high aspect ratio structures

Ion species are supplied to a workpiece comprising a pattern layer over a substrate. A material layer is deposited on the pattern layer using an implantation process of the ion species. In one embodiment, the deposited material layer has an etch selectivity to the pattern layer. In one embodiment, a... Applied Materials Inc

Selective sin lateral recess

Exemplary methods for laterally etching silicon nitride may include flowing a fluorine-containing precursor and an oxygen-containing precursor into a remote plasma region of a semiconductor processing chamber. The methods may include forming a plasma within the remote plasma region to generate plasma effluents of the fluorine-containing precursor and the oxygen-containing... Applied Materials Inc

Selective sin lateral recess

Exemplary methods for laterally etching silicon nitride may include flowing a fluorine-containing precursor and an oxygen-containing precursor into a remote plasma region of a semiconductor processing chamber. The methods may include forming a plasma within the remote plasma region to generate plasma effluents of the fluorine-containing precursor and the oxygen-containing... Applied Materials Inc

Cobalt-containing material removal

Methods are described herein for etching cobalt films which are difficult to volatize. The methods include exposing a cobalt film to a bromine or chlorine-containing precursor with a concurrent local plasma which applies a bias to the impinging etchants. Cobalt halide is formed on the surface at the same time... Applied Materials Inc

Support ring with masked edge

A support ring for semiconductor processing is provided. The support ring includes a ring shaped body defined by an inner edge and an outer edge. The inner edge and outer edge are concentric about a central axis. The ring shaped body further includes a first side, a second side, and... Applied Materials Inc

Protective cover for electrostatic chuck

A protective cover for an electrostatic chuck may include a conductive wafer and a plasma resistant ceramic layer on at least one surface of the conductive wafer. The plasma resistant ceramic layer covers a top surface of the conductive wafer, side walls of the conductive wafer and an outer perimeter... Applied Materials Inc

Battery separator with dielectric coating

Implementations of the present disclosure generally relate to separators, high performance electrochemical devices, such as, batteries and capacitors, including the aforementioned separators, and methods for fabricating the same. In one implementation, a separator for a battery is provided. The separator comprises a substrate capable of conducting ions and at least... Applied Materials Inc

Substrate support assembly

A substrate support assembly comprises a ceramic puck comprising a substrate receiving surface, and having embedded therein: (i) an electrode to generate an electrostatic force to retain a substrate placed on the substrate receiving surface; and (ii) a heater to heat the substrate, the heater comprising a plurality of spaced... Applied Materials Inc

Additive manufacturing of polishing pads on a conveyor

An apparatus for fabricating a polishing pad includes a conveyor belt, a casting station to form a layer of the polishing pad and to deliver the layer of the polishing pad onto the conveyor belt, a printing station including one or more printheads configured to deposit one or more layers... Applied Materials Inc

Flouride glazes from flourine ion treatment

An article comprises a body having a coating. The coating comprising a mixture of a first oxide and a second oxide. The coating includes a glaze on a surface of the coating, the glaze comprising a eutectic system having a super-lattice of a first fluoride and a second fluoride.... Applied Materials Inc

Non-line of sight deposition of erbium based plasma resistant ceramic coating

Described herein is a method of depositing a plasma resistant ceramic coating onto a surface of a chamber component using a non-line-of-sight (NLOS) deposition process, such as atomic layer deposition (ALD) and chemical vapor deposition (CVD). The plasma resistant ceramic coating consists of an erbium containing oxide, an erbium containing... Applied Materials Inc

Multi-channel flow ratio controller and processing chamber

Implementations of the present disclosure generally relate to one or more flow ratio controllers and one or more gas injection inserts in the semiconductor processing chamber. In one implementation, an apparatus includes a first flow ratio controller including a first plurality of flow controllers, a second flow ratio controller including... Applied Materials Inc

Chamber with flow-through source

Described processing chambers may include a chamber housing at least partially defining an interior region of a semiconductor processing chamber. The chamber may include a showerhead positioned within the chamber housing, and the showerhead may at least partially divide the interior region into a remote region and a processing region... Applied Materials Inc

Dual-channel showerhead with improved profile

Described processing chambers may include a chamber housing at least partially defining an interior region of the semiconductor processing chamber. The cambers may include a pedestal. The chambers may include a first showerhead positioned between the lid and the processing region, and may include a faceplate positioned between the first... Applied Materials Inc

Dual-channel showerhead with improved profile

Described processing chambers may include a chamber housing at least partially defining an interior region of the semiconductor processing chamber. The chambers may include a pedestal. The chambers may include a first showerhead positioned between the lid and the processing region, and may include a faceplate positioned between the first... Applied Materials Inc

Ion assisted deposition for rare-earth oxide based thin film coatings on process rings

A ring shaped body includes a top flat region, a ring inner side and a ring outer side. The ring inner side comprises an approximately vertical wall. A conformal protective layer comprising 40 mol % to less than 100 mol % of Y2O3 and above 0 mol % to less... Applied Materials Inc

Chemical modification of hardmask films for enhanced etching and selective removal

Embodiments include a method of processing a hardmask that includes forming an alloyed carbon hardmask over an underlying layer. In an embodiment, the alloyed carbon hardmask is alloyed with metallic-carbon fillers. The embodiment further includes patterning the alloyed carbon hardmask and transferring the pattern of the alloyed carbon hardmask into... Applied Materials Inc

Gas flow profile modulated control of overlay in plasma cvd films

Methods for modulating local stress and overlay error of one or more patterning films may include modulating a gas flow profile of gases introduced into a chamber body, flowing gases within the chamber body toward a substrate, rotating the substrate, and unifying a center-to-edge temperature profile of the substrate by... Applied Materials Inc

Methods of forming self-aligned vias

Processing methods comprising selectively orthogonally growing a first material through a mask to provide an expanded first material are described. The mask can be removed leaving the expanded first material extending orthogonally from the surface of the first material. Further processing can create a self-aligned via.... Applied Materials Inc

Methods and devices using pvd ruthenium

Ruthenium containing gate stacks and methods of forming ruthenium containing gate stacks are described. The ruthenium containing gate stack comprises a polysilicon layer on a substrate; a silicide layer on the polysilicon layer; a barrier layer on the silicide layer; a ruthenium layer on the barrier layer; and a spacer... Applied Materials Inc

Oxygen compatible plasma source

Described processing chambers may include a chamber housing at least partially defining an interior region of a semiconductor processing chamber. The chamber housing may include a lid. The chamber may include a pedestal configured to support a substrate within a processing region of the chamber. The chamber may also include... Applied Materials Inc

Methods and apparatus to prevent interference between processing chambers

Methods and apparatus to minimize electromagnetic interference between adjacent process chambers of a cluster tool are described. The start time of the subject recipe is controlled based on the electromagnetic process window of the subject process chamber, the electromagnetic window of the first adjacent process chamber and of an optional... Applied Materials Inc

Dynamic leveling process heater lift

A method and apparatus for of improving processing results in a processing chamber by orienting a substrate support relative to a surface within the processing chamber. The method comprising orienting a supporting surface of a substrate support in a first orientation relative to an output surface of a showerhead, where... Applied Materials Inc

Doped selective metal caps to improve copper electromigration with ruthenium liner

Embodiments of the present disclosure are related to improved methods for forming an interconnect structure in a substrate. In one implementation, the method includes providing a substrate comprising a metal region and a dielectric region surrounding the metal region, selectively forming a cobalt-containing alloy cap layer on the metal region... Applied Materials Inc

Plasma erosion resistant rare-earth oxide based thin film coatings

An article comprises a body and at least one protective layer on at least one surface of the body. The at least one protective layer is a thin film having a thickness of less than approximately 20 microns that comprises a ceramic selected from a group consisting of Y3Al5O12, Y4Al2O9,... Applied Materials Inc

Process kit shield for improved particle reduction

Apparatus for improved particle reduction are provided herein. In some embodiments, an apparatus may include a process kit shield comprising a one-piece metal body having an upper portion and a lower portion and having an opening disposed through the one-piece metal body, wherein the upper portion includes an opening-facing surface... Applied Materials Inc

Sputtering showerhead

In one implementation, a sputtering showerhead assembly is provided. The sputtering showerhead assembly comprises a faceplate comprising a sputtering surface comprising a target material and a second surface opposing the sputtering surface, wherein a plurality of gas passages extend from the sputtering surface to the second surface. The sputtering showerhead... Applied Materials Inc

Diffuser with corner hcg

The present disclosure generally relates to a gas distribution plate for ensuring deposition uniformity. The gas distribution plate has multiple concave portions on the downstream side to ensure uniform deposition in corner regions of the processing chamber.... Applied Materials Inc

Methods and systems for liquid particle prequalification

Systems for prequalifying components for a processing chamber are described. The systems may be used to clean particulates from chamber parts and concurrently quantify the cleanliness. The systems may be used to qualify replacement parts before sending to a customer site for installation. The systems have three adjacent compartments separated... Applied Materials Inc

Overpolishing based on electromagnetic inductive monitoring of trench depth

During polishing of a substrate a first signal is received from a first in-situ monitoring system and a second signal is received from a second in-situ monitoring system. A clearance time at which a conductive layer is cleared and a top surface of an underlying dielectric layer of the substrate... Applied Materials Inc

03/22/18 / #20180079052

Endpoint detection with compensation for filtering

A method of polishing includes polishing a layer of a substrate, monitoring the layer of the substrate with an in-situ monitoring system to generate signal that depends on a thickness of the layer, filtering the signal to generate a filtered signal, determining an adjusted threshold value from an original threshold... Applied Materials Inc

03/22/18 / #20180079147

Two step curing of polishing pad material in additive manufacturing

A method of additive manufacturing includes dispensing successive layers of feed material to form a polishing pad, and directing first and second radiation beams toward the layers of feed material to form a polishing pad. Dispensing each successive layer of the layers of feed material includes dispensing a drop of... Applied Materials Inc

03/22/18 / #20180079152

Tiltable platform for additive manufacturing of a polishing pad

An additive manufacturing apparatus for forming a polishing pad for chemical mechanical polishing includes a platform, an actuator system coupled to the platform to adjust a tilt of the platform, one or more printheads supported above the platform, the one or more printheads configured to dispense successive layers of feed... Applied Materials Inc

03/22/18 / #20180079153

Control of dispensing operations for additive manufacturing of a polishing pad

An additive manufacturing apparatus includes a platform, a plurality of printheads supported above the platform and configured to dispense successive layers of feed material on a top surface of the platform, the layers of feed material to be formed into a polishing pad, an optical sensor to monitor a dispensing... Applied Materials Inc

03/22/18 / #20180080116

Ion assisted deposition top coat of rare-earth oxide

A method of manufacturing an article comprises providing an article. An ion assisted deposition (IAD) process is performed to deposit a second protective layer over a first protective layer. The second protective layer is a plasma resistant rare earth oxide having a thickness of less than 50 microns and a... Applied Materials Inc

03/22/18 / #20180080124

Methods and systems for thermal ale and ald

Systems and methods for selectively etching and depositing material on the surface of a substrate are described. Systems for atomic layer etching (ALE) and atomic layer deposition (ALD) are described which enable alternating exposure to a first precursor and then a second precursor. The substrate processing region is configured to... Applied Materials Inc

03/22/18 / #20180080125

Apparatus for radical-based deposition of dielectric films

Embodiments disclosed herein generally include an apparatus for radical-based deposition of dielectric films. The apparatus includes a processing chamber, a radical source coupled to the processing chamber, a substrate support disposed in the processing chamber, and a dual-channel showerhead disposed between the radical source and the substrate support. The dual-channel... Applied Materials Inc

03/22/18 / #20180082201

Time-series fault detection, fault classification, and transition analysis using a k-nearest-neighbor and logistic regression approach

Methods and systems for time-series transient analysis of data are disclosed herein. A method includes receiving time-series data, generating a training data set including randomized data points, generating randomized data point combinations using a set of the randomized data points that are within a time window, computing distance values based... Applied Materials Inc

03/22/18 / #20180082827

Methods and processing chamber cleaning end point detection

Embodiments provide systems, methods and apparatus for detecting a cleaning endpoint of a cleaning process performed within a processing chamber. Embodiments include a spectrometer adapted to measure a spectrum response over time of a cleaning reaction within a processing chamber during a cleaning process; and a lens system coupled to... Applied Materials Inc

03/22/18 / #20180082835

Uv radiation arsenic outgassing control in sub 7nm cmos fabrication

Implementations disclosed herein relate to methods for controlling substrate outgassing of hazardous gasses after an epitaxial process. In one implementation, the method includes providing a substrate comprising an epitaxial layer into a transfer chamber, wherein the transfer chamber has an ultraviolet (UV) lamp module disposed adjacent to a top ceiling... Applied Materials Inc

03/22/18 / #20180082836

Integrated source/drain engineering

Implementations described herein generally provide a method of processing a substrate. Specifically, the methods described are used for cleaning and etching source/drain regions on a silicon substrate in preparation for precise Group IV source/drain growth in semiconductor devices. Benefits of this disclosure include precise fin size control in devices, such... Applied Materials Inc

03/22/18 / #20180082847

Plasma treating a process chamber

Embodiments described herein generally relate to a method and apparatus for plasma treating a process chamber. A substrate having a gate stack formed thereon may be placed in a process chamber, and hydrogen containing plasma may be used to treat the gate stack in order to cure the defects in... Applied Materials Inc

03/22/18 / #20180082849

Methods for selective etching of a silicon material using hf gas without nitrogen etchants

The present disclosure provides methods for etching a silicon material in a device structure in semiconductor applications. In one example, a method for etching features in a silicon material includes performing a remote plasma process formed from an etching gas mixture including HF gas without nitrogen etchants to remove a... Applied Materials Inc

03/22/18 / #20180082861

Selective etch using material modification and rf pulsing

Semiconductor systems and methods may include methods of performing selective etches that include modifying a material on a semiconductor substrate. The substrate may have at least two exposed materials on a surface of the semiconductor substrate. The methods may include forming a low-power plasma within a processing chamber housing the... Applied Materials Inc

03/22/18 / #20180082866

Heater pedestal assembly for wide range temperature control

Implementations of the disclosure generally relate to a semiconductor processing chamber and, more specifically, a heated support pedestal for a semiconductor processing chamber. In one implementation, a pedestal assembly is disclosed and includes a substrate support comprising a dielectric material and having a support surface for receiving a substrate, a... Applied Materials Inc

03/22/18 / #20180082870

Assemblies and methods of process gas flow control

Gas flow control assemblies configured to deliver a gas to a process chamber. The gas flow control assemblies include a single-piece manifold including a manifold body having a length, a first side, and a second side opposite the first side, and passageways extending through the manifold body, the passageways being... Applied Materials Inc

03/22/18 / #20180082874

Method and wafer outgassing control

Embodiments disclosed herein generally relate to apparatus and methods for controlling substrate outgassing such that hazardous gasses are eliminated from a surface of a substrate after a Si:As process has been performed on a substrate, and prior to additional processing. The apparatus includes a purge station including an enclosure, a... Applied Materials Inc

03/22/18 / #20180083104

Method of doped germanium formation

Implementations described herein generally relate to methods and systems for depositing layer on substrates, and more specifically, to methods for forming boron or gallium-doped germanium on silicon-containing surfaces. In one implementation, a method of processing a substrate is provided. The method comprises exposing a substrate having an exposed silicon-germanium surface... Applied Materials Inc

03/22/18 / #20180084610

Absorbing reflector for semiconductor processing chamber

Embodiments of the disclosure generally relate to a reflector for use in a thermal processing chamber. In one embodiment, the thermal processing chamber generally includes an upper dome, a lower dome opposing the upper dome, the upper dome and the lower dome defining an internal volume of the processing chamber,... Applied Materials Inc

03/15/18 / #20180071886

Applying dimensional reduction to spectral data from polishing substrates

A plurality of spectra reflected from one or more substrates at a plurality of different positions on the one or more substrates are represented in the form of a first matrix, and the first matrix is decomposed into products of at least two component matrixes of a first set of... Applied Materials Inc

03/15/18 / #20180071889

Chemical mechanical polishing smart ring

Embodiments of the present disclosure generally relate to chemical mechanical polishing (CMP) of substrates. In one embodiment, a carrier head for a CMP apparatus is disclosed herein. The carrier head includes a body, a retaining ring, and a sensor assembly. The retaining ring is coupled to the body. The sensor... Applied Materials Inc

03/15/18 / #20180073125

Plasma erosion resistant rare-earth oxide based thin film coatings

An article comprises a body and at least one protective layer on at least one surface of the body. The at least one protective layer is a thin film having a thickness of less than approximately 20 microns that comprises a ceramic selected from a group consisting of Y3Al5O12, Y4Al2O9,... Applied Materials Inc

03/15/18 / #20180073142

Tunable ground planes in plasma chambers

... Applied Materials Inc

03/15/18 / #20180073150

Single oxide metal deposition chamber

Implementations described herein generally relate to metal oxide deposition in a processing chamber. More specifically, implementations disclosed herein relate to a combined chemical vapor deposition and physical vapor deposition chamber. Utilizing a single oxide metal deposition chamber capable of performing both CVD and PVD advantageously reduces the cost of uniform... Applied Materials Inc

03/15/18 / #20180073162

Degassing chamber for arsenic related processes

Implementations of the present disclosure generally relate to the fabrication of integrated circuits. More specifically, implementations disclosed herein relate to apparatus, systems, and methods for reducing substrate outgassing. A substrate is processed in an epitaxial deposition chamber for depositing an arsenic-containing material on a substrate and then transferred to a... Applied Materials Inc

03/15/18 / #20180073994

Ceramic ring test device

A test fixture includes an outer conductor and an inner conductor disposed within and electrically isolated from the outer conductor. The inner conductor includes a top portion having a first diameter, a bottom portion having a second diameter, and a third portion proximate the bottom portion that has a third... Applied Materials Inc

03/15/18 / #20180074311

Enhanced illumination efficiency in maskless, programmable optical lithography systems

Embodiments described herein generally relate to a DMD. The DMD includes a base and a plurality of mirrors disposed on the base. Each mirror of the plurality of mirrors has a surface facing away from the base, and a structure is disposed on the surface of each mirror. The structure... Applied Materials Inc

03/15/18 / #20180075958

Permanent magnetic chuck for oled mask chucking

A permanent magnetic mask chuck is described herein. The permanent magnetic mask chuck includes a body with a plurality of permanent magnets positioned therein. The permanent magnets can then deliver a magnetic force to a mask to position and hold the mask over or on the substrate for further deposition.... Applied Materials Inc

03/15/18 / #20180076010

Textured skin for chamber components

A chamber component for a processing chamber is disclosed herein. In one embodiment, a chamber component for a processing chamber has a base component body. The base component body has an exterior surface configured to face a processing environment of the processing chamber. A textured skin is conformable to the... Applied Materials Inc

03/15/18 / #20180076020

In-situ pre-clean for selectivity improvement for selective deposition

Methods to selectively deposit a film on a first surface (e.g., a metal surface) relative to a second surface (e.g., a dielectric surface) by exposing the surface to a pre-clean plasma comprising one or more of argon or hydrogen followed by deposition. The first surface and the second surface can... Applied Materials Inc

Patent Packs
03/15/18 / #20180076023

High temperature silicon oxide atomic layer deposition technology

Processes for depositing SiO2 films on a wafer surface utilizing an aminosilane compound as a silicon precursor are described.... Applied Materials Inc

03/15/18 / #20180076026

Steam oxidation initiation for high aspect ratio conformal radical oxidation

A substrate oxidation assembly includes: a chamber body defining a processing volume; a substrate support disposed in the processing volume; a plasma source coupled to the processing volume; a steam source fluidly coupled to the processing volume; and a substrate heater. A method of processing a semiconductor substrate includes: initiating... Applied Materials Inc

03/15/18 / #20180076031

Integrated wafer outgassing reduction

Implementations disclosed herein relate to methods for controlling substrate outgassing. In one implementation, the method includes removing oxides from an exposed surface of a substrate in an inductively coupled plasma chamber, forming an epitaxial layer on the exposed surface of the substrate in an epitaxial deposition chamber, and performing an... Applied Materials Inc

03/15/18 / #20180076032

Thick tungsten hardmask films deposition on high compressive/tensile bow wafers

Implementations of the present disclosure generally relate to the fabrication of integrated circuits. More particularly, the implementations described herein provide techniques for deposition of thick hardmask films on a substrate. In one implementation, a method of forming a hardmask layer on a substrate is provided. The method comprises applying a... Applied Materials Inc

03/15/18 / #20180076041

Contact integration and selective silicide formation methods

Methods for selective silicide formation are described herein. The methods are generally utilized in conjunction with contact structure integration schemes and provide for improved silicide formation characteristics. In one implementation, a silicide material is selectively formed on source/drain (S/D) regions at a temperature less than about 550° C. The resulting... Applied Materials Inc

03/15/18 / #20180076042

Borane mediated dehydrogenation process from silane and alkylsilane species for spacer and hardmask application

Implementations described herein generally relate to the fabrication of integrated circuits and particularly to the deposition of a boron-doped amorphous silicon layers on a semiconductor substrate. In one implementation, a method of forming a boron-doped amorphous silicon layer on a substrate is provided. The method comprises depositing a predetermined thickness... Applied Materials Inc

03/15/18 / #20180076044

Poly directional etch by oxidation

Processing methods may be performed to form recesses in a semiconductor substrate. The methods may include oxidizing an exposed silicon surface on a semiconductor substrate within a processing region of a semiconductor processing chamber. The methods may include forming an inert plasma within the processing region of the processing chamber.... Applied Materials Inc

03/15/18 / #20180076049

Mask etch for patterning

A hard mask layer is deposited on a feature layer over a substrate. The hard mask layer comprises an organic mask layer. An opening in the organic mask layer is formed using a first gas comprising a halogen element at a first temperature greater than a room temperature to expose... Applied Materials Inc

03/15/18 / #20180076065

Integrated system for semiconductor process

Implementations of the present disclosure generally relate to methods and apparatuses for epitaxial deposition on substrate surfaces. More particularly, implementations of the present disclosure generally relate to an integrated system for processing N-type metal-oxide semiconductor (NMOS) devices. In one implementation, a cluster tool for processing a substrate is provided. The... Applied Materials Inc

03/15/18 / #20180076075

Semiconductor process equipment

A substrate transport system is disclosed and includes a chamber having an interior wall, a planar motor disposed on the interior wall, and a substrate carrier magnetically coupled to the planar motor. The substrate carrier comprises a base and a substrate supporting surface coupled to a support member extending from... Applied Materials Inc

03/15/18 / #20180076083

Footing removal for nitride spacer

Processing methods may be performed to remove unwanted materials from a substrate, such as an oxide footing. The methods may include forming an inert plasma within a processing region of a processing chamber. Effluents of the inert plasma may be utilized to modify a surface of an exposed material on... Applied Materials Inc

03/15/18 / #20180076324

Method of contact formation between metal and semiconductor

Implementations of the present disclosure generally relate to improved semiconductor devices and methods of manufacture thereof. More specifically, implementations disclosed herein relate to a semiconductor device having an improved contact interface between the semiconductor material and metal material and methods of manufacture thereof. The method includes forming a semiconductor layer... Applied Materials Inc

03/08/18 / #20180065178

Independently controllable powder delivery for additive manufacturing

An additive manufacturing system that includes a platen, a feed material delivery system configured to deliver feed material to a location on the platen specified by a computer aided design program and a heat source configured to raise a temperature of the feed material simultaneously across all of the layer... Applied Materials Inc

03/08/18 / #20180065227

Polishing pad with secondary window seal

A polishing article has a polishing surface and an aperture, the aperture including a first section and a second section. The polishing article includes a projection extending inwardly into the aperture. The polishing article includes a lower portion on a side of the first surface farther from the polishing surface.... Applied Materials Inc

03/08/18 / #20180066364

Pecvd process

A method of processing a substrate according to a PECVD process is described. Temperature profile of the substrate is adjusted to change deposition rate profile across the substrate. Plasma density profile is adjusted to change deposition rate profile across the substrate. Chamber surfaces exposed to the plasma are heated to... Applied Materials Inc

Patent Packs
03/08/18 / #20180066373

High purity aluminum top coat on substrate

A chamber component for a processing chamber comprises an article having impurities, an aluminum coating on a surface of the article, wherein the aluminum coating is substantially free from impurities, and an anodization layer over the aluminum coating. The anodization layer comprises aluminum oxide. The anodization layer further comprises a... Applied Materials Inc

03/08/18 / #20180066382

Upper dome with injection assembly

Embodiments provided herein generally relate to an apparatus for delivering gas to a semiconductor processing chamber. An upper quartz dome of an epitaxial semiconductor processing chamber has a plurality of holes formed therein and precursor gases are provided into a processing volume of the chamber through the holes of the... Applied Materials Inc

03/08/18 / #20180068890

Method of enabling seamless cobalt gap-fill

Methods for depositing a contact metal layer in contact structures of a semiconductor device are provided. In one embodiment, a method for depositing a contact metal layer for forming a contact structure in a semiconductor device is provided. The method comprises performing a cyclic metal deposition process to deposit a... Applied Materials Inc

03/08/18 / #20180069100

Forming non-line-of-sight source drain extension in an nmos finfet using n-doped selective epitaxial growth

A finFET device includes an n-doped source and/or drain extension that is disposed between a gate spacer of the finFET and a bulk semiconductor portion of the semiconductor substrate on which the n-doped source or drain extension is disposed. The n-doped source or drain extension is formed by a selective... Applied Materials Inc

03/01/18 / #20180056477

Polishing system with annular platen or polishing pad for substrate monitoring

A polishing system includes a platen having a top surface, an annular polishing pad supported on the platen, a carrier head to hold a substrate in contact with the annular polishing pad, a support structure from which the carrier head is suspended and which is configured to move the hold... Applied Materials Inc

03/01/18 / #20180056476

Monitoring of polishing pad thickness for chemical mechanical polishing

An apparatus for chemical mechanical polishing includes a platen having a surface to support a polishing pad, a carrier head to hold a substrate against a polishing surface of the polishing pad, a pad conditioner including a conductive body to be pressed against the polishing surface, an in-situ polishing pad... Applied Materials Inc

03/01/18 / #20180056479

Chemical mechanical polishing tool with robot access to cassettes

A semiconductor fabrication system includes a chemical mechanical polishing system, a cassette holding area enclosed by a wall and having a door openable by an operator to place one or more cassettes into the cassette holding area, a robot configured to transfer substrates between a cassette in the cassette holding... Applied Materials Inc

03/01/18 / #20180057356

Wafer processing equipment having exposable sensing layers

Embodiments include devices and methods for detecting particles, monitoring etch or deposition rates, or controlling an operation of a wafer fabrication process. In an embodiment, one or more micro sensors are mounted on wafer processing equipment, and are capable of measuring material deposition and removal rates in real-time. The micro... Applied Materials Inc

03/01/18 / #20180057362

Precursors suitable for high temperature atomic layer deposition of silicon-containing films

Provided are methods of depositing silicon-containing films utilizing certain precursors at temperatures of 400° C. or higher. Certain methods comprise exposing a substrate surface to a silicon precursor and another precursor to achieve various films. Examples of silicon-containing films which can be deposited include SiN, SiC, SiO2, SiCN, etc.... Applied Materials Inc

03/01/18 / #20180057935

Endpoint detection for a chamber cleaning process

Embodiments of the present invention provide an apparatus and methods for detecting an endpoint for a cleaning process. In one example, a method of determining a cleaning endpoint includes performing a cleaning process in a plasma processing chamber, directing an optical signal to a surface of a shadow frame during... Applied Materials Inc

03/01/18 / #20180061032

Thickness measurement of substrate using color metrology

A metrology system for obtaining a measurement representative of a thickness of a layer on a substrate includes a camera positioned to capture a color image of at least a portion of the substrate. A controller is configured to receive the color image from the camera, store a predetermined path... Applied Materials Inc

03/01/18 / #20180061616

Low pressure lift pin cavity hardware

Embodiments disclosed herein generally relate to a pumping system for a plasma processing apparatus. The pumping system includes a first pump path, a second pump path, a first valve, and a second valve. The first pump path couples an opening of a substrate support assembly of the processing chamber to... Applied Materials Inc

03/01/18 / #20180061617

Method to deposit aluminum oxy-fluoride layer for fast recovery of etch amount in etch chamber

Implementations of the present disclosure provide a chamber component for use in a processing chamber. The chamber component includes a body for use in a plasma processing chamber, a barrier oxide layer formed on at least a portion of an exposed surface of the body, the barrier oxide layer having... Applied Materials Inc

03/01/18 / #20180061618

Plasma screen for plasma processing chamber

Embodiments of the present disclosure relate to a plasma screen used in a plasma processing chamber with improved flow conductance and uniformity. One embodiment provides a plasma screen. The plasma screen includes a circular plate having a center opening and an outer diameter. A plurality of cut outs formed through... Applied Materials Inc

03/01/18 / #20180061629

Low temperature molecular layer deposition of sicon

Methods for the deposition of a SiCON film by molecular layer deposition using a multi-functional amine and a silicon containing precursor having a reactive moiety.... Applied Materials Inc

03/01/18 / #20180061679

Multi chamber processing system with shared vacuum system

Methods and apparatus for a multi-chamber processing system having shared vacuum systems are disclosed herein. In some embodiments, a multi-chamber processing system for processing substrates includes a first process chamber; a second process chamber; a first vacuum system coupled to the first and second process chambers through first and second... Applied Materials Inc

03/01/18 / #20180061683

Direct optical heating of substrates through optical guide

A substrate support assembly includes a ceramic plate, a cooling plate coupled to the ceramic plate, and an optical guide coupled to the cooling plate. The ceramic plate comprises a top surface, a bottom surface and a first channel, wherein the top surface is to support a substrate. The cooling... Applied Materials Inc

03/01/18 / #20180061684

Optical heating of light absorbing objects in substrate support

A substrate support assembly includes a ceramic plate and a cooling base coupled to the ceramic plate. A light absorbing object is disposed in the ceramic plate and a light transmission media is disposed in the cooling base. The light carrying medium is to direct light onto the light absorbing... Applied Materials Inc

03/01/18 / #20180061696

Edge ring or process kit for semiconductor process module

The present invention generally relates method and apparatus for detecting erosion to a ring assembly used in an etching or other plasma processing chamber. In one embodiment, a method begins by obtaining a metric indicative of wear on a ring assembly disposed on a substrate support in a plasma processing... Applied Materials Inc

03/01/18 / #20180061721

Self-healing semiconductor wafer processing

Implementations of the present disclosure generally relate to methods for processing substrates, and more particularly, to methods for predicting, quantifying and correcting process drift. In one implementation, the method includes performing a design of experiments (DOE) in a process chamber to obtain sensor readings and film properties at multiple locations... Applied Materials Inc

03/01/18 / #20180061949

Common contact of n++ and p++ transistor drain regions in cmos

Implementations of the present disclosure relate to semiconductor devices such as transistors used for amplifying or switching electronic signals. In one implementation, an integrated circuit is provided. The integrated circuit comprises a first transistor having a first conductivity type, the first transistor comprising a first gate, an first source region... Applied Materials Inc

03/01/18 / #20180061978

Horizontal gate all around and finfet device isolation

Embodiments described herein generally relate to methods and device structures for horizontal gate all around (hGAA) isolation and fin field effect transistor (FinFET) isolation. A superlattice structure comprising different materials arranged in an alternatingly stacked formation may be formed on a substrate. In one embodiment, at least one of the... Applied Materials Inc








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