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Asm Japan K k
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Asm Japan K k patents

Recent patent applications related to Asm Japan K k. Asm Japan K k is listed as an Agent/Assignee. Note: Asm Japan K k may have other listings under different names/spellings. We're not affiliated with Asm Japan K k, we're just tracking patents.

ARCHIVE: New 2017 2016 2015 2014 2013 2012 2011 2010 2009 | Company Directory "A" | Asm Japan K k-related inventors




Date Asm Japan K k patents (updated weekly) - BOOKMARK this page
02/26/15Method of forming metal oxide hardmask
04/04/13Method for forming single-phase multi-element film by peald
03/21/13Uv irradiation apparatus having uv lamp-shared multiple process stations
01/31/13Method for reducing dielectric constant of film using direct plasma of hydrogen
01/17/13Container having multiple compartments containing liquid material for multiple wafer-processing chambers
01/17/13Wafer-supporting device and producing same
12/27/12Method for positioning wafers in multiple wafer transport
12/27/12Dual section module having shared and unshared mass flow controllers
12/06/12High-throughput semiconductor-processing apparatus equipped with multiple dual-chamber modules
11/22/12Method of depositing dielectric film by ald using precursor containing silicon, hydrocarbon, and halogen
11/01/12Atomic layer deposition for controlling vertical film growth
10/18/12Footing reduction using etch-selective layer
09/06/12Calibration uv sensor for uv curing
08/30/12Method of depositing dielectric film by modified peald method
08/23/12Method of depositing dielectric film by ald using precursor containing silicon, hydrocarbon, and halogen
08/02/12Method of depositing film by atomic layer deposition with pulse-time-modulated plasma
06/28/12Method of forming metal oxide hardmask
05/10/12Method of depositing film with tailored comformality
04/26/12Shower plate having different aperture dimensions and/or distributions
03/08/12Method of forming conformal film having si-n bonds on high-aspect ratio pattern
02/02/12Method of tailoring conformality of si-containing film
09/08/11Method for forming interconnect structure having airgap
06/30/11Method for sealing pores at surface of dielectric layer by uv light-assisted cvd
04/14/11Method of depositing dielectric film having si-n bonds by modified peald method
01/20/11Method of forming stress-tuned dielectric film having si-n bonds by modified peald
11/18/10Method of forming highly conformal amorphous carbon layer
10/07/10Method of depositing silicon oxide film by plasma enhanced atomic layer deposition at low temperature
09/02/10Method of forming conformal dielectric film having si-n bonds by pecvd
07/29/10Method of forming hardmask by plasma cvd
07/22/10Method of forming conformal dielectric film having si-n bonds by pecvd
07/15/10Method for controlling flow and concentration of liquid precursor
06/24/10Semiconductor-processing apparatus equipped with robot diagnostic module
06/17/10Multiple-substrate transfer apparatus and multiple-substrate processing apparatus
06/17/10Method of forming low-k film having chemical resistance
06/10/10Method for forming low-carbon cvd film for filling trenches
06/10/10Method of forming conformal dielectric film having si-n bonds by pecvd
06/03/10Process for forming high resistivity thin metallic film
05/20/10Method of forming insulation film using plasma treatment cycles
05/20/10Method of forming insulation film by modified peald
04/29/10Wafer lift pins suspended and supported at underside of susceptor
04/29/10Two-step formation of hydrocarbon-based polymer film
04/15/10Method for forming metal film by ald using beta-diketone metal complex
04/15/10Purge step-controlled sequence of processing semiconductor wafers
04/08/10Impedance matching plasma-enhanced reaction reactor
03/04/10Atomic composition controlled ruthenium alloy film formed by plasma-enhanced atomic layer deposition
02/25/10Semiconductor manufacturing apparatus equipped with wafer inspection device and inspection techniques
02/11/10Semiconductor manufacturing apparatus
01/21/10Semiconductor processing apparatus having all-round type wafer handling chamber
01/14/10Exhaust gas trap for semiconductor processes
01/07/10Wafer-positioning mechanism
01/07/10Method of forming fluorine-containing dielectric film
12/03/09Apparatus and improving production throughput in cvd chamber
12/03/09Device isolation technology on semiconductor substrate
12/03/09Method for designing shower plate for plasma cvd apparatus
11/05/09Method of forming a high transparent carbon film
10/08/09Wafer processing apparatus with wafer alignment device
10/01/09Method for activating reactive oxygen species for cleaning carbon-based film deposition
09/24/09Substrate-supporting device having continuous concavity
08/20/09Ruthenium alloy film for copper interconnects
08/13/09Clamping mechanism for semiconductor device
06/25/09Tandem type semiconductor-processing apparatus
06/18/09Shower plate electrode for plasma cvd reactor
06/18/09Method for forming ta-ru liner layer for cu wiring
06/18/09Method for forming dielectric film using siloxane-silazane mixture
06/11/09Method for forming dielectric sioch film having chemical stability
Patent Packs
06/04/09Method for forming silazane-based dielectric film
05/28/09Method of plasma treatment using amplitude-modulated rf power
04/16/09Method for forming ultra-thin boron-containing nitride films and related apparatus
04/09/09Semiconductor manufacturing curing materials with uv light
04/09/09Method of self-cleaning of carbon-based film
04/09/09Semiconductor manufacturing curing material with uv light
04/09/09Position sensor system for substrate transfer robot
04/02/09Method for forming ruthenium complex film using beta-diketone-coordinated ruthenium precursor
03/12/09Method of forming a carbon polymer film using plasma cvd
03/05/09Method and monitoring plasma-induced damage using dc floating potential of substrate
03/05/09Technology of detecting abnormal operation of plasma process
02/26/09Method for controlling semiconductor-processing apparatus
01/21/10Semiconductor processing apparatus having all-round type wafer handling chamber
01/14/10Exhaust gas trap for semiconductor processes
01/07/10Method of forming fluorine-containing dielectric film
Patent Packs







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