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Atomera Incorporated patents


Recent patent applications related to Atomera Incorporated. Atomera Incorporated is listed as an Agent/Assignee. Note: Atomera Incorporated may have other listings under different names/spellings. We're not affiliated with Atomera Incorporated, we're just tracking patents.

ARCHIVE: New 2018 2017 2016 2015 2014 2013 2012 2011 2010 2009 | Company Directory "A" | Atomera Incorporated-related inventors


Method for making a semiconductor device including a resonant tunneling diode with electron mean free path control layers

A method for making a semiconductor device may include forming at least one a double-barrier resonant tunneling diode (DBRTD) by forming a first doped semiconductor layer, and a forming first barrier layer on the first doped semiconductor layer and including a superlattice. The method may further include forming a first... Atomera Incorporated

Semiconductor device including resonant tunneling diode structure having a superlattice

A semiconductor device may include at least one double-barrier resonant tunneling diode (DBRTD). The at least one DBRTD may include a first doped semiconductor layer and a first barrier layer on the first doped semiconductor layer and including a superlattice. The superlattice may include stacked groups of layers, each group... Atomera Incorporated

Method for making a semiconductor device including a resonant tunneling diode structure having a superlattice

A method for making a semiconductor device may include forming at least one double-barrier resonant tunneling diode (DBRTD) by forming a first doped semiconductor layer, and forming a first barrier layer on the first doped semiconductor layer and including a superlattice. The superlattice may include stacked groups of layers, each... Atomera Incorporated

Semiconductor device including a resonant tunneling diode structure with electron mean free path control layers

A semiconductor device including at least one double-barrier resonant tunneling diode (DBRTD) is provided. The at least one DBRTD may include a first doped semiconductor layer, and a first barrier layer on the first doped semiconductor layer and including a superlattice. The DBRTD may further include a first intrinsic semiconductor... Atomera Incorporated

Dram architecture to reduce row activation circuitry power and peripheral leakage and related methods

A semiconductor device may include a plurality of memory cells, and at least one peripheral circuit coupled to the plurality of memory cells and comprising a superlattice. The superlattice may include a plurality of stacked groups of layers with each group of layers comprising a plurality of stacked base semiconductor... Atomera Incorporated

Semiconductor device including a superlattice and replacement metal gate structure and related methods

A semiconductor device may include a substrate having a channel recess therein, a plurality of spaced apart shallow trench isolation (STI) regions in the substrate, and source and drain regions spaced apart in the substrate and between a pair of the STI regions. A superlattice channel may be in the... Atomera Incorporated

Semiconductor devices with enhanced deterministic doping and related methods

A method for making a semiconductor device may include forming a plurality of stacked groups of layers on a semiconductor substrate, with each group of layers including a plurality of stacked base semiconductor monolayers defining a base semiconductor portion and at least one non-semiconductor monolayer constrained within a crystal lattice... Atomera Incorporated








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