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Avalanche Technology Inc
Avalanche Technology Inc_20131212

Avalanche Technology Inc patents


Recent patent applications related to Avalanche Technology Inc. Avalanche Technology Inc is listed as an Agent/Assignee. Note: Avalanche Technology Inc may have other listings under different names/spellings. We're not affiliated with Avalanche Technology Inc, we're just tracking patents.

ARCHIVE: New 2018 2017 2016 2015 2014 2013 2012 2011 2010 2009 | Company Directory "A" | Avalanche Technology Inc-related inventors


Fast programming of magnetic random access memory (mram)

The present invention is directed to a method for programming a magnetic tunnel junction (MTJ) coupled to a transistor having a gate, a source, and a drain. The method includes the steps of setting a voltage of a source line to a first voltage, the source line being coupled to... Avalanche Technology Inc

Magnetic random access memory with multilayered seed structure

The present invention is directed to an MTJ memory element, which comprises a magnetic fixed layer structure formed on top of a seed layer structure that includes a first seed layer and a second seed layer. The first seed layer includes one or more layers of nickel interleaved with one... Avalanche Technology Inc

Selector device incorporating conductive clusters for memory applications

The present invention is directed to a memory device that includes an array of memory cells. Each of the memory cells includes a memory element connected to a two-terminal selector element. The two-terminal selector element includes a first electrode and a second electrode with a switching layer interposed therebetween. The... Avalanche Technology Inc

Magnetic random access memory with perpendicular enhancement layer

The present invention is directed to a magnetic tunnel junction (MTJ) memory element including a magnetic free layer structure and a magnetic reference layer structure with an insulating tunnel junction layer interposed therebetween; a magnetic fixed layer exchange coupled to the magnetic reference layer structure through an anti-ferromagnetic coupling layer;... Avalanche Technology Inc

Fast programming of magnetic random access memory (mram)

A method of programming an MTJ includes selecting the MTJ and an access transistor coupled thereto. The gate of the selected access transistor is coupled to a selected word line (WL), which is raised to a first voltage, Vdd, and is then allowed to float. The first voltage and a... Avalanche Technology Inc

Magnetic random access memory with dynamic random access memory (dram)-like interface

A memory device configured to emulate DRAM comprising a memory array that includes a plurality of memory cells organized into rows and columns with at least one row of memory cells comprising one or more pages that store data during a burst write operation; a control circuit; an encoder operable... Avalanche Technology Inc

Method of implementing magnetic random access memory (mram) for mobile system-on-chip boot

The present invention is directed to a method for booting a system-on-chip (SoC) including the steps of directly executing a boot software from an on-chip magnetic random access memory (MRAM) residing on a same semiconductor as the SoC; storing an operating system (OS) software and an application software on an... Avalanche Technology Inc

Spin-orbitronics device and applications thereof

The present invention is directed to a spin-orbitronics device including an array of MTJs with each of the MTJs coupled to a respective one of a plurality of selection transistors; a plurality of transverse polarizing lines with each of the transverse polarizing lines coupled to a row of the MTJs... Avalanche Technology Inc

Memory device for emulating dynamic random access memory (dram)

The present invention is directed to a magnetic memory device that emulates DRAM and provides a plug-in or drop-in replacement for DRAM. The memory device includes one or more magnetic memory banks for storing data; a controller configured to issue a dormant write command upon receiving a refresh command for... Avalanche Technology Inc

Serial link storage interface (slsi) hybrid block storage

The present invention is directed to a computer subsystem that includes a central processing unit (CPU); one or more byte-addressable memory modules having a dual in-line memory module (DIMM) form factor connected to the CPU via a first memory channel; and a master persistent memory module and one or more... Avalanche Technology Inc

Method and adjustment of current through a magnetoresistive tunnel junction (mtj) based on temperature fluctuations

A non-volatile memory system includes a first circuit and a second circuit both coupled to a magnetoresistance tunnel junction (MTJ) cell to substantially reduce the level of current flowing through the MTJ with rise in temperature, as experienced by the MTJ. The first circuit is operable to adjust a slope... Avalanche Technology Inc

Magnetic random access memory having perpendicular enhancement layer

The present invention is directed to an STT-MRAM device comprising a plurality of memory elements. Each of the memory elements includes an MTJ structure that comprises a magnetic free layer structure and a magnetic reference layer structure with an insulating tunnel junction layer interposed therebetween; a first perpendicular enhancement layer... Avalanche Technology Inc

Fast programming of magnetic random access memory (mram)

A method of programming an MTJ includes selecting the MTJ and an access transistor coupled thereto. The gate of the selected access transistor is coupled to a selected word line (WL), which is raised to a first voltage, Vdd, and is then allowed to float. The first voltage and a... Avalanche Technology Inc

Management of memory array with magnetic random access memory (mram)

The present invention is directed to a storage device including a storage media and a controller coupled thereto through a high speed interface. The storage media includes one or more byte-addressable persistent memory devices, one or more block-addressable persistent memory devices, a hybrid reserved area spanning at least a portion... Avalanche Technology Inc

Reduction of area and power for sense amplifier in memory

The present invention is directed to a memory subsystem including a plurality of memory banks, each of the memory banks including a plurality of memory cells arranged in rows and columns with word-lines connecting to the memory cells along a row direction and bit-lines connecting to the memory cells along... Avalanche Technology Inc

Magnetic random access memory with perpendicular enhancement layer

The present invention is directed to an MTJ memory element comprising a magnetic free layer structure including one or more magnetic free layers that have a variable magnetization direction substantially perpendicular to layer planes thereof; an insulating tunnel junction layer formed adjacent to the magnetic free layer structure; a magnetic... Avalanche Technology Inc

Programming of non-volatile memory subjected to high temperature exposure

A memory device having features of the present invention comprises a reprogrammable memory portion including therein a first plurality of magnetic tunnel junctions (MTJs) whose resistance is switchable; and a one-time-programmable (OTP) memory portion including therein a second plurality of MTJs whose resistance is switchable and a third plurality of... Avalanche Technology Inc

Method and adjustment of current through a magnetoresistive tunnel junction (mtj) based on temperature fluctuations

A non-volatile memory system includes a first circuit and a second circuit both coupled to a magnetoresistance tunnel junction (MTJ) cell to substantially reduce the level of current flowing through the MTJ with rise in temperature, as experienced by the MTJ. The first circuit is operable to adjust a slope... Avalanche Technology Inc

Magnetic random access memory with multilayered seed structure

The present invention is directed to a magnetic random access memory element that includes a multilayered seed structure formed by interleaving multiple layers of a first transition metal with multiple layers of a second transition metal; and a first magnetic layer formed on top of the multilayered seed structure. The... Avalanche Technology Inc








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