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Avalanche Technology Inc patents


Recent patent applications related to Avalanche Technology Inc. Avalanche Technology Inc is listed as an Agent/Assignee. Note: Avalanche Technology Inc may have other listings under different names/spellings. We're not affiliated with Avalanche Technology Inc, we're just tracking patents.

ARCHIVE: New 2018 2017 2016 2015 2014 2013 2012 2011 2010 2009 | Company Directory "A" | Avalanche Technology Inc-related inventors


Magnetic random access memory with ultrathin reference layer

The present invention is directed to a magnetic memory element including a magnetic free layer and a first magnetic reference layer with an insulating tunnel junction layer interposed therebetween; a second magnetic reference layer made of a material comprising cobalt and formed adjacent to the first magnetic reference layer opposite the insulating tunnel junction layer; an iridium layer formed adjacent to the second magnetic reference layer opposite the first magnetic reference layer; and a magnetic fixed layer formed adjacent to the iridium layer. The magnetic free layer has a variable magnetization direction substantially perpendicular to the layer plane thereof. ... Avalanche Technology Inc

Magnetic random access memory with dynamic random access memory (dram)-like interface

A non-volatile memory device configured to emulate dram interface comprising a memory array that includes a plurality of magnetic memory cells organized into rows and columns with at least one row of the magnetic memory cells comprising one or more pages that store data during a burst write operation; a control circuit; an encoder operable to encode the data to be written to the memory array; and a decoder coupled to the memory array and operable to check and correct the data previously encoded by the encoder and saved in the memory array. The control circuit is operable to initiate the burst write operation that writes the data to the memory array while spanning multiple clock cycles; and after receiving one or more data units of the data by the memory array, allow a subsequent burst write or read command to begin before completion of the burst write operation in progress.. ... Avalanche Technology Inc

Magnetic random access memory with perpendicular enhancement layer

The present invention is directed to a magnetic memory element including a magnetic free layer structure having a variable magnetization direction perpendicular to a layer plane thereof; an oxide layer formed adjacent to the magnetic free layer structure; an insulating tunnel junction layer formed adjacent to the magnetic free layer structure opposite the oxide layer; a first magnetic reference layer formed adjacent to the insulating tunnel junction layer opposite the magnetic free layer structure; a second magnetic reference layer separated from the first magnetic reference layer by a perpendicular enhancement layer; an antiferromagnetic coupling layer formed adjacent to the second magnetic reference layer; and a magnetic fixed layer structure formed adjacent to the antiferromagnetic coupling layer. The first and second magnetic reference layers have a first invariable magnetization direction substantially perpendicular to layer planes thereof. ... Avalanche Technology Inc

Magnetic random access memory with perpendicular enhancement layer

The present invention is directed to a magnetic memory element including a magnetic free layer structure having a variable magnetization direction perpendicular to a layer plane thereof; an insulating tunnel junction layer formed adjacent to the magnetic free layer structure; a first magnetic reference layer comprising cobalt, iron, and boron formed adjacent to the insulating tunnel junction layer; a second magnetic reference layer comprising cobalt separated from the first magnetic reference layer by a molybdenum layer; an iridium layer formed adjacent to the second magnetic reference layer; and a magnetic fixed layer structure formed adjacent to the iridium layer. The magnetic free layer structure includes a first and a second magnetic free layers with a perpendicular enhancement layer interposed therebetween. ... Avalanche Technology Inc

Method for sensing memory element coupled to selector device

The present invention is directed to a method for sensing the resistance state of a memory cell that includes an mtj memory element coupled to a two-terminal selector element in series. The method includes the steps of raising a cell voltage across the memory cell above a threshold voltage for the selector element to become conductive; decreasing the cell voltage to a first sensing voltage and measuring a first sensing current passing through the memory cell, the selector element being nominally conductive irrespective of the resistance state of the mtj memory element at the first sensing voltage; and further decreasing the cell voltage to a second sensing voltage and measuring a second sensing current, the selector element being nominally conductive if the mtj memory element is in the low resistance state or nominally insulative if the mtj memory element is in the high resistance state at the second sensing voltage.. ... Avalanche Technology Inc

Fast programming of magnetic random access memory (mram)

The present invention is directed to a method for programming a magnetic tunnel junction (mtj) coupled to a transistor having a gate, a source, and a drain. The method includes the steps of setting a voltage of a source line to a first voltage, the source line being coupled to one of the source and drain of the transistor, the other one of the source and drain of the transistor being coupled to one end of the mtj; setting a voltage of a bit line to zero, the bit line being coupled to the other end of the mtj; setting a voltage of a word line coupled to the gate of the transistor to a second voltage that is higher than the first voltage; and programming the mtj from a first resistance state to a second resistance state by driving a current through the mtj from the source line to the bit line.. ... Avalanche Technology Inc

Magnetic random access memory with multilayered seed structure

The present invention is directed to an mtj memory element, which comprises a magnetic fixed layer structure formed on top of a seed layer structure that includes a first seed layer and a second seed layer. The first seed layer includes one or more layers of nickel interleaved with one or more layers of a transition metal, which may be tantalum, titanium, or vanadium. ... Avalanche Technology Inc

Selector device incorporating conductive clusters for memory applications

The present invention is directed to a memory device that includes an array of memory cells. Each of the memory cells includes a memory element connected to a two-terminal selector element. ... Avalanche Technology Inc

Magnetic random access memory with perpendicular enhancement layer

The present invention is directed to a magnetic tunnel junction (mtj) memory element including a magnetic free layer structure and a magnetic reference layer structure with an insulating tunnel junction layer interposed therebetween; a magnetic fixed layer exchange coupled to the magnetic reference layer structure through an anti-ferromagnetic coupling layer; a magnesium oxide layer formed adjacent to the magnetic fixed layer; and a metal layer comprising nickel and chromium formed adjacent to the magnesium oxide layer. The magnetic reference layer structure includes a first and a second magnetic reference layers with a first perpendicular enhancement layer (pel) interposed therebetween. ... Avalanche Technology Inc

Fast programming of magnetic random access memory (mram)

A method of programming an mtj includes selecting the mtj and an access transistor coupled thereto. The gate of the selected access transistor is coupled to a selected word line (wl), which is raised to a first voltage, vdd, and is then allowed to float. ... Avalanche Technology Inc

Magnetic random access memory with dynamic random access memory (dram)-like interface

A memory device configured to emulate dram comprising a memory array that includes a plurality of memory cells organized into rows and columns with at least one row of memory cells comprising one or more pages that store data during a burst write operation; a control circuit; an encoder operable to encode the data to be written to the memory array; and a decoder coupled to the memory array and operable to check and correct the data previously encoded by the encoder and saved in the memory array. The control circuit is operable to initiate the burst write operation that writes the data to the memory array while spanning multiple clock cycles; and after receiving one or more data units of the data by the memory array, allow a subsequent burst write or read command to begin before completion of the burst write operation in progress.. ... Avalanche Technology Inc

Method of implementing magnetic random access memory (mram) for mobile system-on-chip boot

The present invention is directed to a method for booting a system-on-chip (soc) including the steps of directly executing a boot software from an on-chip magnetic random access memory (mram) residing on a same semiconductor as the soc; storing an operating system (os) software and an application software on an external mram; directly executing the operating system software from the external mram by the soc without loading the operating system into a volatile memory; directly executing the application software from the external mram by the soc, wherein the external mram is coupled to the soc and is configured for permanently storing the operating system software and the application software.. . ... Avalanche Technology Inc

Spin-orbitronics device and applications thereof

The present invention is directed to a spin-orbitronics device including an array of mtjs with each of the mtjs coupled to a respective one of a plurality of selection transistors; a plurality of transverse polarizing lines with each of the transverse polarizing lines coupled to a row of the mtjs along a first direction; a plurality of word lines with each of the word lines coupled to gates of a row of the selection transistors along a second direction; and a plurality of source lines with each of the source lines coupled to a row of the selection transistors along a direction substantially perpendicular to the second direction. Each mtj includes a magnetic comparison layer structure having a pseudo-invariable magnetization direction, which is configured to switch between two stable states by passing a comparison current through one of the plurality of transverse polarizing lines formed adjacent to the magnetic comparison layer structure.. ... Avalanche Technology Inc

Memory device for emulating dynamic random access memory (dram)

The present invention is directed to a magnetic memory device that emulates dram and provides a plug-in or drop-in replacement for dram. The memory device includes one or more magnetic memory banks for storing data; a controller configured to issue a dormant write command upon receiving a refresh command for recharging dram capacitors; and a memory cache for storing temporary data and configured to save the temporary data to the one or more magnetic memory banks upon receiving the dormant write command from the controller. ... Avalanche Technology Inc

07/06/17 / #20170192679

Serial link storage interface (slsi) hybrid block storage

The present invention is directed to a computer subsystem that includes a central processing unit (cpu); one or more byte-addressable memory modules having a dual in-line memory module (dimm) form factor connected to the cpu via a first memory channel; and a master persistent memory module and one or more slave persistent memory modules having the dimm form factor connected to the cpu via a second memory channel. The master persistent memory module and the one or more slave persistent memory modules are connected in a daisy chain configuration. ... Avalanche Technology Inc

06/08/17 / #20170162781

Magnetic random access memory having perpendicular enhancement layer

The present invention is directed to an stt-mram device comprising a plurality of memory elements. Each of the memory elements includes an mtj structure that comprises a magnetic free layer structure and a magnetic reference layer structure with an insulating tunnel junction layer interposed therebetween; a first perpendicular enhancement layer (pel) formed adjacent to the magnetic free layer structure; a magnetic dead layer formed adjacent to the first pel; and a magnetic fixed layer exchange coupled to the magnetic reference layer structure through an anti-ferromagnetic coupling layer. ... Avalanche Technology Inc

06/08/17 / #20170162242

Method and apparatus for adjustment of current through a magnetoresistive tunnel junction (mtj) based on temperature fluctuations

A non-volatile memory system includes a first circuit and a second circuit both coupled to a magnetoresistance tunnel junction (mtj) cell to substantially reduce the level of current flowing through the mtj with rise in temperature, as experienced by the mtj. The first circuit is operable to adjust a slope of a curve representing current as a function of temperature and the second circuit is operable to adjust a value of the current level through the mtj to maintain current constant or to reduce current when the temperature increases. ... Avalanche Technology Inc

05/18/17 / #20170140805

Fast programming of magnetic random access memory (mram)

A method of programming an mtj includes selecting the mtj and an access transistor coupled thereto. The gate of the selected access transistor is coupled to a selected word line (wl), which is raised to a first voltage, vdd, and is then allowed to float. ... Avalanche Technology Inc

05/11/17 / #20170131943

Management of memory array with magnetic random access memory (mram)

The present invention is directed to a storage device including a storage media and a controller coupled thereto through a high speed interface. The storage media includes one or more byte-addressable persistent memory devices, one or more block-addressable persistent memory devices, a hybrid reserved area spanning at least a portion of the one or more byte-addressable persistent memory devices, and a hybrid user area spanning at least a portion of the one or more block-addressable persistent memory devices. ... Avalanche Technology Inc

03/30/17 / #20170091021

Reduction of area and power for sense amplifier in memory

The present invention is directed to a memory subsystem including a plurality of memory banks, each of the memory banks including a plurality of memory cells arranged in rows and columns with word-lines connecting to the memory cells along a row direction and bit-lines connecting to the memory cells along a column direction; a sense amplifier module shared by the plurality of memory banks, the sense amplifier module including a plurality of sense amplifiers for sensing resistance of the memory cells; a plurality of memory buffer modules coupled to the sense amplifier module, each of the memory buffer modules including a plurality of memory buffers for storing data from the sense amplifiers; and an input/output (i/o) interface coupled to the memory buffer modules.. . ... Avalanche Technology Inc

03/23/17 / #20170084826

Magnetic random access memory with perpendicular enhancement layer

The present invention is directed to an mtj memory element comprising a magnetic free layer structure including one or more magnetic free layers that have a variable magnetization direction substantially perpendicular to layer planes thereof; an insulating tunnel junction layer formed adjacent to the magnetic free layer structure; a magnetic reference layer structure including a first magnetic reference layer and a second magnetic reference layer with a perpendicular enhancement layer interposed therebetween, the first and second magnetic reference layers having a first fixed magnetization direction substantially perpendicular to layer planes thereof; an anti-ferromagnetic coupling layer formed adjacent to the second magnetic reference layer; and a magnetic fixed layer formed adjacent to the anti-ferromagnetic coupling layer. The non-magnetic perpendicular enhancement layer includes a first perpendicular enhancement sublayer formed adjacent to the first magnetic reference layer and a second perpendicular enhancement sublayer formed adjacent to the second magnetic reference layer.. ... Avalanche Technology Inc

03/16/17 / #20170076818

Programming of non-volatile memory subjected to high temperature exposure

A memory device having features of the present invention comprises a reprogrammable memory portion including therein a first plurality of magnetic tunnel junctions (mtjs) whose resistance is switchable; and a one-time-programmable (otp) memory portion including therein a second plurality of mtjs whose resistance is switchable and a third plurality of mtjs whose resistance is fixed. Each mtj of the first, second, and third plurality of mtjs includes a magnetic free layer having a magnetization direction substantially perpendicular to a layer plane thereof and a magnetic reference layer having a fixed magnetization direction substantially perpendicular to a layer plane thereof. ... Avalanche Technology Inc

02/16/17 / #20170047104

Method and apparatus for adjustment of current through a magnetoresistive tunnel junction (mtj) based on temperature fluctuations

A non-volatile memory system includes a first circuit and a second circuit both coupled to a magnetoresistance tunnel junction (mtj) cell to substantially reduce the level of current flowing through the mtj with rise in temperature, as experienced by the mtj. The first circuit is operable to adjust a slope of a curve representing current as a function of temperature and the second circuit is operable to adjust a value of the current level through the mtj to maintain current constant or to reduce current when the temperature increases. ... Avalanche Technology Inc

02/02/17 / #20170033156

Magnetic random access memory with multilayered seed structure

The present invention is directed to a magnetic random access memory element that includes a multilayered seed structure formed by interleaving multiple layers of a first transition metal with multiple layers of a second transition metal; and a first magnetic layer formed on top of the multilayered seed structure. The first magnetic layer has a multilayer structure formed by interleaving layers of the first transition metal with layers of a magnetic material and has a first fixed magnetization direction substantially perpendicular to a layer plane thereof the first transition metal is platinum or palladium, while the second transition metal is selected from the group consisting of tantalum, titanium, zirconium, hafnium, vanadium, niobium, chromium, molybdenum, and tungsten.. ... Avalanche Technology Inc








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