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Axcelis Technologies Inc patents


Recent patent applications related to Axcelis Technologies Inc. Axcelis Technologies Inc is listed as an Agent/Assignee. Note: Axcelis Technologies Inc may have other listings under different names/spellings. We're not affiliated with Axcelis Technologies Inc, we're just tracking patents.

ARCHIVE: New 2018 2017 2016 2015 2014 2013 2012 2011 2010 2009 | Company Directory "A" | Axcelis Technologies Inc-related inventors


System for semiconductor wafer retention and sensing in a vacuum load lock

A workpiece clamp has a base with first and second sides with a cam ring rotatably coupled to the first side. The cam ring has plurality of cam slots. ... Axcelis Technologies Inc

Phosphine co-gas for carbon implants

Processes and systems for carbon ion implantation include utilizing phosphine as a co-gas with a carbon oxide gas in an ion source chamber. In one or more embodiments, carbon implantation with the phosphine co-gas is in combination with the lanthanated tungsten alloy ion source components, which advantageously results in minimal oxidation of the cathode and cathode shield, among other components within the ion source chamber.. ... Axcelis Technologies Inc

Phosphorous trifluoride co-gas for carbon implants

Processes and systems for carbon ion implantation include utilizing phosphorous trifluoride (pf3) as a co-gas with carbon oxide gas, and in some embodiments, in combination with the lanthanated tungsten alloy ion source components advantageously results in minimal oxidation of the cathode and cathode shield. Moreover, acceptable levels of carbon deposits on the arc chamber internal components have been observed as well as marked reductions in the halogen cycle, i.e., wfx formation.. ... Axcelis Technologies Inc

Low conductance self-shielding insulator for ion implantation systems

An insulator for an ion source is positioned between the apertured ground electrode and apertured suppression electrode. The insulator has an elongate body having a first end and a second end, where one or more features are defined in the elongate body and increase a gas conductance path along a surface of the elongate body from the first end to the second end. ... Axcelis Technologies Inc

Adjustable circumference electrostatic clamp

An electrostatic chuck for clamping workpieces having differing diameters is provided. A central electrostatic chuck member associated with a first workpiece and a first peripheral electrostatic chuck member associated with a second workpiece are provided. ... Axcelis Technologies Inc

In-situ cleaning using hydrogen peroxide as co-gas to primary dopant or purge gas for minimizing carbon deposits in an ion source

An ion source assembly and method is provided for improving ion implantation performance. The ion source assembly has an ion source chamber and a source gas supply provides a molecular carbon source gas such as toluene to the ion source chamber. ... Axcelis Technologies Inc

Integrated emissivity sensor alignment characterization

A workpiece alignment system has a workpiece support to support a workpiece. A first light emitter directs a first light beam toward the workpiece. ... Axcelis Technologies Inc

In situ beam current monitoring and control in scanned ion implantation systems

A system and method for controlling an ion implantation system as a function of sampling ion beam current and uniformity thereof. The ion implantation system includes a plurality of ion beam optical elements configured to selectively steer and/or shape the ion beam as it is transported toward a workpiece, wherein the ion beam is sampled at a high frequency to provide a plurality of ion beam current samples, which are then analyzed to detect fluctuations and/or nonuniformities or unpredicted variations amongst the plurality of ion beam current samples. ... Axcelis Technologies Inc

Implantation using solid aluminum iodide (ali3) for producing atomic aluminum ions and in situ cleaning of aluminum iodide and associated by-products

An ion implantation system is provided having an ion source configured to form an ion beam from aluminum iodide. A beamline assembly selectively transports the ion beam to an end station configured to accept the ion beam for implantation of aluminum ions into a workpiece. ... Axcelis Technologies Inc

Implantation using solid aluminum iodide (ali3) for producing atomic aluminum ions and in situ cleaning of aluminum iodide and associated by-products

An ion implantation system is provided having an ion source configured to form an ion beam from aluminum iodide. A beamline assembly selectively transports the ion beam to an end station configured to accept the ion beam for implantation of aluminum ions into a workpiece. ... Axcelis Technologies Inc

Wafer cooling method

An ion implantation system has a first chamber and a process chamber with a heated chuck. A controller transfers the workpiece between the heated chuck and first chamber and selectively energizes the heated chuck first and second modes. ... Axcelis Technologies Inc

Lanthanated tungsten ion source and beamline components

An ion implantation system is provided having one or more conductive components comprised of one or more of lanthanated tungsten and a refractory metal alloyed with a predetermined percentage of a rare earth metal. The conductive component may be a component of an ion source, such as one or more of a cathode, cathode shield, a repeller, a liner, an aperture plate, an arc chamber body, and a strike plate. ... Axcelis Technologies Inc

Ion source repeller shield

An arc chamber has a liner operably coupled to body. The liner has a second surface recessed from a first surface and a hole having a first diameter. ... Axcelis Technologies Inc

Multi-piece electrode aperture

An optics plate for an ion implantation system, the optics plate comprising a pair of aperture assemblies. Each pair of aperture assemblies respectively comprises a first aperture member, a second aperture member; and an aperture fastener, wherein the aperture fastener fastens the first aperture member to the second aperture member. ... Axcelis Technologies Inc

07/20/17 / #20170207054

Ion source cathode shield

An ion source has an arc chamber having an arc chamber body. An electrode extends into an interior region of the arc chamber body, and a cathode shield has a body that is cylindrical having an axial hole. ... Axcelis Technologies Inc

06/22/17 / #20170178933

High throughput serial wafer handling end station

An ion implantation apparatus, system, and method are provided for transferring a plurality of workpieces between vacuum and atmospheric pressures, wherein an alignment mechanism is operable to align a plurality of workpieces for generally simultaneous transportation to a dual-workpiece load lock chamber. The alignment mechanism comprises a characterization device, an elevator, and two vertically-aligned workpiece supports for supporting two workpieces. ... Axcelis Technologies Inc

05/11/17 / #20170133193

Ion source liner having a lip for ion implantation systems

An ion source has an arc chamber having a body defining and interior region. A liner defined an exposure surface of the interior region that is exposed to a plasma generated within the arc chamber. ... Axcelis Technologies Inc

02/09/17 / #20170040141

High throughput cooled ion implantation system and method

An ion implantation system has a process chamber having a process environment, and an ion implantation apparatus configured to implant ions into a workpiece supported by a chuck within the process chamber. A load lock chamber isolates the process (vacuum) environment from an atmospheric environment, wherein a load lock workpiece support supports the workpiece therein. ... Axcelis Technologies Inc








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