Real Time Touch



new TOP 200 Companies filing patents this week

new Companies with the Most Patent Filings (2010+)




Real Time Touch

Similar
Filing Names

Cabot Microelectronics Corporation
Cabot Microelectronics Corporation_20100114
Cabot Microelectronics Corporation_20131212

Cabot Microelectronics Corporation patents


Recent patent applications related to Cabot Microelectronics Corporation. Cabot Microelectronics Corporation is listed as an Agent/Assignee. Note: Cabot Microelectronics Corporation may have other listings under different names/spellings. We're not affiliated with Cabot Microelectronics Corporation, we're just tracking patents.

ARCHIVE: New 2018 2017 2016 2015 2014 2013 2012 2011 2010 2009 | Company Directory "C" | Cabot Microelectronics Corporation-related inventors


Polishing composition comprising an amine-containing surfactant

The invention provides a chemical-mechanical polishing composition comprising (a) wet-process ceria abrasive, (b) a surfactant comprising an amine-containing anchor group and ethylene oxide-propylene oxide stabilizing group, wherein the surfactant has a molecular weight of from about 1000 Daltons to about 5000 Daltons, (c) an aromatic carboxylic acid or heteroaromatic carboxylic... Cabot Microelectronics Corporation

Chemical-mechanical processing slurry and methods for processing a nickel substrate surface

Described are slurry compositions useful in chemical-mechanical processing of a nickel layer of a substrate, wherein the slurry compositions contain abrasive particles that include silica particles that are cationically charged at a low pH.... Cabot Microelectronics Corporation

Cobalt polishing accelerators

The invention provides a chemical-mechanical polishing composition comprising (a) abrasive particles, (b) a cobalt accelerator selected from a compound having the formula: NR1R2R3 wherein R1, R2, and R3 are independently selected from hydrogen, carboxyalkyl, substituted carboxyalkyl, hydroxyalkyl, substituted hydroxyalkyl and aminocarbonylalkyl, wherein none or one of R1, R2, and R3... Cabot Microelectronics Corporation

Method of polishing group iii-v materials

Disclosed is a method of chemically-mechanically polishing a substrate. The method comprises, consists of, or consists essentially of (a) contacting a substrate containing at least one Group III-V material, with a polishing pad and a chemical-mechanical polishing composition comprising water, abrasive particles having a negative surface charge, and an oxidizing... Cabot Microelectronics Corporation

Polishing composition comprising cationic polymer additive

The invention provides a chemical-mechanical polishing composition comprising (a) wet-process ceria, (b) a water-soluble cationic polymer or copolymer, (c) an aromatic carboxylic acid or heteroaromatic carboxylic acid, and (d) water, wherein the polishing composition has a pH of about 3 to about 6. The invention further provides a method of... Cabot Microelectronics Corporation

Tungsten processing slurry with catalyst

Described are compositions (e.g., slurries) useful in methods for chemical-mechanical processing (e.g. polishing or planarizing) a surface of a substrate that contains tungsten, the slurries containing abrasive particles, metal cation catalyst, phosphorus-containing zwitterionic compound, and optional ingredients such as oxidizer; also described are methods and substrates used or processed on... Cabot Microelectronics Corporation

Method of polishing a low-k substrate

Disclosed is a method of chemically-mechanically polishing a substrate. The method comprises, consists of, or consists essentially of (a) contacting a substrate containing a low-k dielectric composition, which includes less than about 80% by weight of carbon, with a polishing pad and a chemical-mechanical polishing composition comprising water and abrasive... Cabot Microelectronics Corporation

Cmp processing composition comprising alkylamine and cyclodextrin

Described are compositions useful in methods for chemical-mechanical processing a surface of a substrate, especially a substrate that contains dielectric material, wherein the composition contains cyclodextrin and an alkylamine.... Cabot Microelectronics Corporation

Cleaning composition following cmp and methods related thereto

The invention provides a composition for cleaning contaminants from semiconductor wafers following chemical-mechanical polishing. The cleaning composition contains a bulky protecting ligand, an organic amine, an organic inhibitor, and water. The invention also provides methods for using the cleaning composition.... Cabot Microelectronics Corporation

Stabilization of tris(2 hydroxyethyl)methylammonium hydroxide against decomposition with dialkyhydroxylamine

The invention provides stabilized solutions useful as raw materials in various applications and methods for stabilizing such aqueous solutions with a stabilizer comprising one or more dialkylhydroxylamines or inorganic or organic acid salts thereof. Stabilized solutions and methods for stabilizing aqueous solutions thereof, include, for example, those of tris(2-hydroxy ethyl)methylammonium... Cabot Microelectronics Corporation

Polishing pad with foundation layer and window attached thereto

Polishing pads having a foundation layer and a window attached to the foundation layer, and methods of fabricating such polishing pads, are described. In an example, a polishing pad for polishing a substrate includes a foundation layer having a first modulus. A polishing layer is attached to the foundation layer... Cabot Microelectronics Corporation

Tungsten-processing slurry with cationic surfactant and cyclodextrin

Described are chemical-mechanical polishing compositions (e.g., slurries) and methods of using the slurries for chemical-mechanical polishing (or planarizing) a surface of a substrate that contains tungsten, the compositions containing cationic surfactant and cyclodextrin.... Cabot Microelectronics Corporation

Tungsten-processing slurry with cationic surfactant

Described are chemical mechanical polishing compositions and methods of using the compositions for planarizing a surface of a substrate that contains tungsten, the compositions containing silica abrasive particles and cationic surfactant.... Cabot Microelectronics Corporation

Polyurethane cmp pads having a high modulus ratio

A chemical-mechanical polishing pad comprising a polyurethane polishing layer having a high storage modulus at low temperatures and a low storage modulus at high temperatures is disclosed. For example, the disclosed pad embodiments may be fabricated from a thermoplastic polyurethane having a ratio of storage modulus at 25 degrees C.... Cabot Microelectronics Corporation

Selective nitride slurries with improved stability and improved polishing characteristics

The invention provides a chemical-mechanical polishing composition comprising, consisting essentially of, or consisting of (a) about 0.01 wt. % to about 1 wt. % of wet-process ceria, (b) about 10 ppm to about 200 ppm of a cationic polymer comprising quaternary amino groups, (c) about 10 ppm to about 2000... Cabot Microelectronics Corporation

Methods and compositions for processing dielectric substrate

Described are materials and methods for processing (polishing or planarizing) a substrate that contains pattern dielectric material using a polishing composition (aka “slurry”) and an abrasive pad, e.g., CMP processing.... Cabot Microelectronics Corporation

Polishing composition and method utilizing abrasive particles treated with an aminosilane

The inventive method comprises chemically-mechanically polishing a substrate with an inventive polishing composition comprising a liquid carrier and abrasive particles that have been treated with a compound.... Cabot Microelectronics Corporation

Polishing composition containing ceria abrasive

The invention provides a chemical-mechanical polishing composition including first abrasive particles, wherein the first abrasive particles are wet-process ceria particles, have a median particle size of about 40 nm to about 100 nm, are present in the polishing composition at a concentration of about 0.005 wt. % to about 2... Cabot Microelectronics Corporation

Cmp polishing pad with columnar structure and methods related thereto

The invention provides a polishing pad for chemical-mechanical polishing. The polishing pad has a substrate with two opposing surfaces and a plurality of columns projecting from at least one of the surfaces of the substrate in spaced relation to each other. The invention also provides an apparatus utilizing the polishing... Cabot Microelectronics Corporation

Methods and compositions for processing dielectric substrate

Described are materials and methods for processing (polishing or planarizing) a substrate that contains pattern dielectric material using a polishing composition (aka “slurry”) and an abrasive pad, e.g., CMP processing.... Cabot Microelectronics Corporation








ARCHIVE: New 2018 2017 2016 2015 2014 2013 2012 2011 2010 2009



###

This listing is an abstract for educational and research purposes is only meant as a recent sample of applications filed, not a comprehensive history. Freshpatents.com is not affiliated or associated with Cabot Microelectronics Corporation in any way and there may be associated servicemarks. This data is also published to the public by the USPTO and available for free on their website. Note that there may be alternative spellings for Cabot Microelectronics Corporation with additional patents listed. Browse our Agent directory for other possible listings. Page by FreshPatents.com

###