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Canon Anelva Corporation
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Canon Anelva Corporation patents


Recent patent applications related to Canon Anelva Corporation. Canon Anelva Corporation is listed as an Agent/Assignee. Note: Canon Anelva Corporation may have other listings under different names/spellings. We're not affiliated with Canon Anelva Corporation, we're just tracking patents.

ARCHIVE: New 2018 2017 2016 2015 2014 2013 2012 2011 2010 2009 | Company Directory "C" | Canon Anelva Corporation-related inventors


Method for manufacturing semiconductor device, ion beam etching device, and control device

An ion beam etching device includes a grid provided between a treatment chamber and a plasma generation chamber, and for forming an ion beam by drawing ions from the plasma generation chamber; a gas introduction unit for introducing discharge gas into the plasma generation chamber; an exhaust for exhausting the... Canon Anelva Corporation

Method of manufacturing perpendicular mtj device

An embodiment of the present invention is a method of manufacturing a perpendicular MTJ device which includes: a first stacked structure including a pair of CoFeB layers sandwiching an MgO layer; and a second stacked structure including a multilayer, the method comprising the steps of: forming one of the first... Canon Anelva Corporation

Epitaxial film forming method, sputtering apparatus, manufacturing semiconductor light-emitting element, semiconductor light-emitting element, and illumination device

The present invention provides an epitaxial film forming method for epitaxially growing a high-quality group III nitride semiconductor thin film on an α-Al2O3 substrate by a sputtering method. In the epitaxial film forming method according to an embodiment of the present invention, when an epitaxial film of a group III... Canon Anelva Corporation

Method of manufacturing magnetoresistive element

Provided are a method of manufacturing a magnetoresistive element and a manufacturing system which are capable of manufacturing a magnetoresistive element achieving further downscaling, i.e., further increase in the degree of integration of the magnetoresistive element while having high magnetic properties. The method includes: preparing a stacked film including one... Canon Anelva Corporation

Deposition apparatus

A deposition apparatus includes a chamber, a holding unit configured to hold a substrate in the chamber, a driving unit configured to move the holding unit holding the substrate such that the substrate passes through a deposition area in the chamber, a deposition unit configured to form a film on... Canon Anelva Corporation

Deposition apparatus

A deposition apparatus includes a plasma generator for generating a plasma by arc discharge, and a deposition unit for forming a film on a member by the plasma generated by the plasma generator. The plasma generator includes a target holder for holding a target and applying a negative potential to... Canon Anelva Corporation

Film formation method, vacuum processing apparatus, manufacturing semiconductor light emitting element, semiconductor light emitting element, manufacturing semiconductor electronic element, semiconductor electronic element, and illuminating apparatus

The present invention provides a film formation method and a film formation apparatus which can fabricate an epitaxial film with +c polarity by a sputtering method. In one embodiment of the present invention, the film formation method of epitaxially growing a semiconductor thin film with a wurtzite structure by the... Canon Anelva Corporation

Sputtering apparatus and processing apparatus

A sputtering apparatus includes a space defining member defining a sputtering space for forming a film on a substrate. The space defining member includes a concave portion, and an opening portion is provided in the bottom portion of the concave portion. The sputtering apparatus includes a shield member configured to... Canon Anelva Corporation

Manufacturing apparatus

The present invention provides a manufacturing apparatus which can realize so-called sequential substrate transfer and can improve throughput, even when one multi-layered thin film includes plural layers of the same film type. A manufacturing apparatus according to an embodiment of the present invention includes a transfer chamber, three sputtering deposition... Canon Anelva Corporation

Ion beam etching method and ion beam etching apparatus

To provide an ion beam etching method which enables a highly uniform IBE process even under a low-angle-incident static condition, without increase in the size of an apparatus. The ion beam etching method includes: changing a position of an opening portion with respect to a substrate; etching the substrate with... Canon Anelva Corporation

Grid, manufacturing the same, and ion beam processing apparatus

A grid of the present invention is a plate-shaped grid provided with a hole. The grid is formed of a carbon-carbon composite including carbon fibers arranged in random directions along a planar direction of the grid, and the hole is formed in the grid so as to cut off the... Canon Anelva Corporation

Heat treatment method and heat treatment semiconductor substrate

A heat treatment method for a semiconductor substrate is provided which improves the shapes of the sharp corners at the opening and the bottom of a trench without using flammable or explosive gas while improving productivity. The heat treatment is performed on a semiconductor substrate with a recess formed therein... Canon Anelva Corporation








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