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Commissariat xe0 I xe9 nergie Atomique Et Aux xe9 nergies Alternatives patents


Recent patent applications related to Commissariat xe0 I xe9 nergie Atomique Et Aux xe9 nergies Alternatives. Commissariat xe0 I xe9 nergie Atomique Et Aux xe9 nergies Alternatives is listed as an Agent/Assignee. Note: Commissariat xe0 I xe9 nergie Atomique Et Aux xe9 nergies Alternatives may have other listings under different names/spellings. We're not affiliated with Commissariat xe0 I xe9 nergie Atomique Et Aux xe9 nergies Alternatives, we're just tracking patents.

ARCHIVE: New 2018 2017 2016 2015 2014 2013 2012 2011 2010 2009 | Company Directory "C" | Commissariat xe0 I xe9 nergie Atomique Et Aux xe9 nergies Alternatives-related inventors


Device for thermal destruction of organic compounds by an induction plasma

A device for chemical destruction of at least one feed comprising at least one organic compound are provided. In one aspect, the device comprises at least one inductive plasma torch, means for introducing at least one plasma-forming gas into the torch, optionally when the plasma gas(es) comprise(s) no or little... Commissariat xe0 I xe9 nergie Atomique Et Aux xe9 nergies Alternatives

System for observing objects

the splitter (9) and the quarter-wave plate (10) being arranged so that the splitter (9) directs the light emitted by the light source (3) toward the solid substrate and directs the backscattered light from the interaction between the light emitted by the light source (3) and the objects toward the... Commissariat xe0 I xe9 nergie Atomique Et Aux xe9 nergies Alternatives

Lens-free imaging system comprising a diode, a diaphragm, and a diffuser between the diode and the diaphragm

The system further comprises a light diffuser positioned between the diode and the diaphragm.... Commissariat xe0 I xe9 nergie Atomique Et Aux xe9 nergies Alternatives

Soi integrated circuit equipped with a device for protecting against electrostatic discharges

A protection device for protecting an IC against electrostatic discharge includes a buried insulant layer having a thickness that is no greater than fifty nanometers with bipolar transistors arranged thereon, one of which is NPN and the other of which is PNP. A base of one merges with a collector... Commissariat xe0 I xe9 nergie Atomique Et Aux xe9 nergies Alternatives








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