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Commissariat xe0 L xc9 nergie Atomique Et Aux xc9 nergies Alternatives patents


Recent patent applications related to Commissariat xe0 L xc9 nergie Atomique Et Aux xc9 nergies Alternatives. Commissariat xe0 L xc9 nergie Atomique Et Aux xc9 nergies Alternatives is listed as an Agent/Assignee. Note: Commissariat xe0 L xc9 nergie Atomique Et Aux xc9 nergies Alternatives may have other listings under different names/spellings. We're not affiliated with Commissariat xe0 L xc9 nergie Atomique Et Aux xc9 nergies Alternatives, we're just tracking patents.

ARCHIVE: New 2018 2017 2016 2015 2014 2013 2012 2011 2010 2009 | Company Directory "C" | Commissariat xe0 L xc9 nergie Atomique Et Aux xc9 nergies Alternatives-related inventors


Memory circuit capable of implementing calculation operations

A memory circuit capable of implementing calculation operations, including: memory cells arranged in rows and in columns, each cell including: a data bit storage node, a read-out transistor connected by its gate to the storage node, and a selection transistor series-connected with the read-out transistor between a reference node and... Commissariat xe0 L xc9 nergie Atomique Et Aux xc9 nergies Alternatives

Milimeter-wave transmission device

A millimeter-wave transmission device including a waveguide made of a material having a dielectric constant in the range from 1 to 4, the waveguide being solid at each of its ends with an electronic unit embedded in the material of the waveguide, the electronic unit including a millimeter wave transceiver... Commissariat xe0 L xc9 nergie Atomique Et Aux xc9 nergies Alternatives

Unipolar resistive memory

A memory circuit including cells connected in rows and in columns, each cell including a programmable resistive element and a control transistor, the memory circuit further including a control circuit capable of, during a cell programming phase: applying a first voltage to a control conductive track of the column including... Commissariat xe0 L xc9 nergie Atomique Et Aux xc9 nergies Alternatives

Method of forming sige channel formation region

A method comprising: forming an SiGe layer on sidewalls of one or more fins of a semiconductor device by a non-selective deposition of amorphous SiGe, the fins being formed of Si or SiGe; depositing a silicon oxide layer over the SiGe layer; and forming an SiGe channel formation region within... Commissariat xe0 L xc9 nergie Atomique Et Aux xc9 nergies Alternatives

Data back-up in an asynchronous circuit

An asynchronous circuit including an asynchronous pipeline including two or more stages, each stage having: a buffering circuit for temporarily storing data to be transferred from one stage to the next based on a handshake protocol, the buffering circuit including a non-volatile memory; and a data presence detection circuit adapted... Commissariat xe0 L xc9 nergie Atomique Et Aux xc9 nergies Alternatives

Method of manufacturing a screen provided with retroreflective microstructures

A method of manufacturing a primary mold for the forming of a retroreflective screen, the method including the steps of: a) forming, on the front surface of such a substrate, a layer of a material such that the first substrate is selectively etchable over said layer; and b) forming microrecesses... Commissariat xe0 L xc9 nergie Atomique Et Aux xc9 nergies Alternatives

Low power consumption logic cell

The invention relates to a logic cell for an integrated circuit including at least one first variable-capacitance capacitor having first and second main electrodes separated by an insulating region, and a third control electrode capable of receiving a control voltage referenced to a reference node of the cell to vary... Commissariat xe0 L xc9 nergie Atomique Et Aux xc9 nergies Alternatives

Optical data receiver with relative phase detector

An optical receiver adapted to convert a received optical signal into a phase change of a timing signal to generate a first modified timing signal and to generate a data signal by comparing the first modified timing signal with a reference signal.... Commissariat xe0 L xc9 nergie Atomique Et Aux xc9 nergies Alternatives

Method for equipping registers of an integrated circuit to detect timing violations

A method of circuit conception including performing static timing analysis on a circuit design to identify a first subset of the synchronous devices having at least one input path with a slack time below a first threshold; simulating the circuit design using one or more functional test patterns to identify... Commissariat xe0 L xc9 nergie Atomique Et Aux xc9 nergies Alternatives

Reference voltage generation circuit

An FDSOI reference voltage generation circuit, including a CTAT current generation circuit; a PTAT-type voltage generation circuit including a first branch including first and second series-connected transistors, the front surface gates of the first and second transistors being connected to the conduction node of the second transistor opposite to the... Commissariat xe0 L xc9 nergie Atomique Et Aux xc9 nergies Alternatives

Optoelectronic device comprising light-emitting diodes with improved light extraction

An optoelectronic device including a semiconductor substrate having a face, light-emitting diodes arranged on the face and including wired conical or frustoconical semiconductor elements, and an at least partially transparent dielectric layer covering the light-emitting diodes, the refractive index of the dielectric layer being between 1.6 et 1.8.... Commissariat xe0 L xc9 nergie Atomique Et Aux xc9 nergies Alternatives

Method of manufacturing a layer containing quantum dots

A method of manufacturing a layer containing quantum dots, the layer including first regions where the quantum dots are active and second regions where the quantum dots are inactive, the method including: a) depositing on a support a first layer of a matrix containing quantum dots; b) depositing on the... Commissariat xe0 L xc9 nergie Atomique Et Aux xc9 nergies Alternatives

Plasmonic optical filter

A plasmonic optical filter, including: a periodic repetition of metal slabs above a metal surface; dielectric spacers arranged between the slabs and the metal surface so that there exists an empty space between each slab and the metal surface; and an opening between each of said empty spaces and the... Commissariat xe0 L xc9 nergie Atomique Et Aux xc9 nergies Alternatives

Electronic device and manufacturing the same

A method of manufacturing an electronic device including a film, including the steps of forming at least one layer of a solution including a solvent and a compound including a polymer selected from the group including poly(vinylidene fluoride-trifluoroethylene-chlorofluoroethylene) (P(VDF-TrFE-CFE)), poly(vinylidene fluoride-trifluoroethylene-chlorotrifluoroethylene) (P(VDF-TrFE-CTFE)) and a mixture of these compounds, the molecular... Commissariat xe0 L xc9 nergie Atomique Et Aux xc9 nergies Alternatives

Reconfigurable cam

A content addressable memory having at least one CAM cell including first and second inverters cross-coupled between first and second storage nodes; a first transistor coupling the first storage node to a bitline, the first transistor being controlled by a first control signal; a second transistor coupling the second storage... Commissariat xe0 L xc9 nergie Atomique Et Aux xc9 nergies Alternatives

Method and circuit for controlling programming current in a non-volatile memory array

A memory device having: a cross-point memory array; a current supply circuit adapted to supply a programming current to a selected row line of the array during a programming operation to change the resistive state of a selected memory cell coupled between the selected row line and a selected column... Commissariat xe0 L xc9 nergie Atomique Et Aux xc9 nergies Alternatives

Spad-type photodiode

A SPAD including, in a substrate of a first conductivity type: a first region of the second conductivity type extending from the upper surface of the substrate; a second region of the first type of greater doping level than the substrate, extending from the lower surface of the first region,... Commissariat xe0 L xc9 nergie Atomique Et Aux xc9 nergies Alternatives

Spad-type photodiode

A SPAD including, in a substrate of a first conductivity type: a first region of the second conductivity type extending from the upper surface of the substrate; a second region of the first type of greater doping level than the substrate, extending from the lower surface of the first region,... Commissariat xe0 L xc9 nergie Atomique Et Aux xc9 nergies Alternatives

Multiple quantum well light-emitting device

A light-emitting device including a substrate, three-dimensional semiconductor elements resting on the substrate, at least one shell at least partially covering the lateral walls of the semiconductor element, the shell including an active area having multiple quantum wells, and an electrode at least partially covering the shell, at least a... Commissariat xe0 L xc9 nergie Atomique Et Aux xc9 nergies Alternatives








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