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Coorstek Kk patents


Recent patent applications related to Coorstek Kk. Coorstek Kk is listed as an Agent/Assignee. Note: Coorstek Kk may have other listings under different names/spellings. We're not affiliated with Coorstek Kk, we're just tracking patents.

ARCHIVE: New 2018 2017 2016 2015 2014 2013 2012 2011 2010 2009 | Company Directory "C" | Coorstek Kk-related inventors


Vertical wafer boat

A vertical wafer boat includes a plurality of struts formed with a shelf plate portion configured to mount a silicon wafer, and a top plate and a bottom plate which fix upper and lower ends of the struts. The shelf plate portion is inclined downward toward the center of the boat, and a wafer support portion which protrudes upward and abuts on an edge portion of the silicon wafer is formed at a distal end of the shelf plate portion. ... Coorstek Kk

Ceramic composite, phosphor for projector including the same, and light emitting device for projector including the same

A ceramic composite contains inorganic materials and includes a phosphor phase including yag containing ce, and a scatterer phase including a translucent ceramic, in which the phosphor phase is contained in an amount of 90 vol % or more and 99 vol % or less, and the scatterer phase is contained in an amount of 1 vol % or more and 10 vol % or less.. . ... Coorstek Kk

Silica glass member and method of manufacturing the same

Provided is a silica glass member which exhibits high optical transparency to vacuum ultraviolet light and has a low thermal expansion coefficient of 4.0−10−7/k or less at near room temperature, particularly a silica glass member which is suitable as a photomask substrate to be used in a double patterning exposure process using an arf excimer laser (193 nm) as a light source. The silica glass member is used in a photolithography process using a vacuum ultraviolet light source, in which the fluorine concentration is 1 wt % or more and 5 wt % or less, and the thermal expansion coefficient at from 20° c. ... Coorstek Kk

Cell culture carrier and cell culture module

A cell culture carrier includes a first substrate. The first substrate has a plurality of wells on an upper surface and includes a porous body. ... Coorstek Kk

Composite silica glass made light diffusion member

A composite silica glass made light diffusion member includes a dense silica glass, and a porous silica glass which has been layered on the surface of the dense silica glass. The porous silica glass is a porous body and has a homogeneous pore distribution. ... Coorstek Kk

Particles for monolithic refractory

Particles for a monolithic refractory are made of a spinet porous sintered body which is represented by a chemical formula of mgal2o4, wherein pores having a pore size of 0.01 μm or more and less than 0.8 μm occupy 10 vol % or more and 50 vol % or less with respect to a total volume of pores having a pore size of 10 μm or less in the particles, and the particles for a monolithic refractory have grain size distribution in which particles having a particle size of less than 45 μm occupy 60 vol % or less, particles having a particle size of 45 μm or more and less than 100 μm occupy 20 vol % or more and 60 vol % or less, and particles having a particle size of 100 μm or more and 1000 μm or less occupy 10 vol % or more and 50 vol % or less.. . ... Coorstek Kk

Corrosion resistant member and method for manufacturing the same

A method for manufacturing a corrosion resistant member that includes a substrate including a ceramic or a metal, and at least one layer of a corrosion resistant film formed on a surface of at least a region of the substrate to be exposed to plasma or a corrosive gas. The corrosion resistant film contains yttria as a main component and further contains at least one of tantalum and niobium in an amount of 0.02 mol % to 10 mol % in terms of pentoxide relative to the yttria, and a non-melted portion is not present in the corrosion resistant film. ... Coorstek Kk

Compound semiconductor substrate

A compound semiconductor substrate according to the present invention includes a compound semiconductor layer formed on one main surface of a ground substrate via a seed layer, wherein the ground substrate is formed of a sintered body, the seed layer is formed of a single crystal, the compound semiconductor layer includes a structure having a buffer layer and an active layer that are sequentially crystal-grown on the seed layer, a thermal expansion coefficient of the sintered body is 0.7 times or more and 1.4 times or less an average thermal expansion coefficient of the entire compound semiconductor layer, and an fwhm of an x-ray diffraction peak of the buffer layer obtained by an x-ray diffraction rocking curve measurement is 800 arcsec or less.. . ... Coorstek Kk

Nitride semiconductor substrate

The present invention provides a nitride semiconductor substrate having an initial nitride and a nitride semiconductor sequentially stacked on one principal plane of a base substrate, wherein the nitride semiconductor substrate comprises recesses depressed from an interface between the base substrate and the initial nitride toward the base substrate along one arbitrary cross section; the recesses each have a diameter of 6 nm or more and 60 nm or less and are formed at a density of 3×108 pieces/cm2 or more and 1×1011 pieces/cm2 or less; and the recess preferably has a depth of 3 nm or more and 45 nm or less from the interface between the base substrate and the initial nitride toward the base substrate.. . ... Coorstek Kk








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