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Crocus Technology Inc patents


Recent patent applications related to Crocus Technology Inc. Crocus Technology Inc is listed as an Agent/Assignee. Note: Crocus Technology Inc may have other listings under different names/spellings. We're not affiliated with Crocus Technology Inc, we're just tracking patents.

ARCHIVE: New 2018 2017 2016 2015 2014 2013 2012 2011 2010 2009 | Company Directory "C" | Crocus Technology Inc-related inventors


Logic gate module for performing logic functions comprising a mram cell and method for operating the same

A logic gate module for performing logic functions including a mram cell including a magnetic tunnel junction comprising a sense layer, a storage layer, and a spacer layer. The mram cell has a junction resistance determined by the degree of alignment between a sense magnetization of the sense layer and the storage magnetization of the storage layer. ... Crocus Technology Inc

Mlu based magnetic sensor having improved programmability and sensitivity

A magnetic sensor device for sensing an external magnetic field includes a plurality of mlu cells, each mlu cell having a magnetic tunnel junction including a sense layer having a sense magnetization freely orientable in the external magnetic field, a storage layer having a storage magnetization; and a tunnel barrier layer between the sense layer and the storage layer. The magnetic sensor device includes a stress inducing device configured for applying an anisotropic mechanical stress on the magnetic tunnel junction such as to induce a stress-induced magnetic anisotropy on at least one of the sense layer and the storage layer. ... Crocus Technology Inc

Magnetic logic unit (mlu) cell for sensing magnetic fields with improved programmability and low reading consumption

A magnetic logic unit (mlu) cell for sensing magnetic fields, including: a magnetic tunnel junction including a storage layer having a storage magnetization, a sense layer having a sense magnetization; a tunnel barrier layer between the storage layer and the sense layer; and a pinning layer pinning the storage magnetization at a low threshold temperature and freeing it at a high threshold temperature. The sense magnetization is freely alignable at the low and high threshold temperatures and the storage layer induces an exchange bias field magnetically coupling the sense layer such that the sense magnetization tends to be aligned antiparallel or parallel to the storage magnetization. ... Crocus Technology Inc

Mlu cell for sensing an external magnetic field and a magnetic sensor device comprising the mlu cell

A mlu cell for sensing an external magnetic field, including a magnetic tunnel junction including a sense layer having a sense magnetization adapted to be oriented by the external magnetic field; a reference layer having a reference magnetization; a tunnel barrier layer; a biasing layer having a biasing magnetization and a biasing antiferromagnetic layer pinning the biasing magnetization substantially parallel to the pinned reference magnetization at a low threshold temperature and freeing it at a high threshold temperature. A biasing coupling layer is between the sense layer and the basing layer and configured for magnetically coupling the biasing layer and the sense layer such that the sense magnetization is oriented substantially perpendicular to the pinned biasing magnetization and to the pinned reference magnetization. ... Crocus Technology Inc

Electrical interconnecting device for mram-based magnetic devices

A mram-based magnetic device including an electrical interconnecting device including: a magnetic tunnel junction; a strap portion electrically connecting a lower end of the magnetic tunnel junction; a current line portion electrically connecting an upper end of the magnetic tunnel junction; an upper metallic stud electrically connecting a lower metallic stud through a via; the strap portion being in direct electrical contact with the via, such that a current passing in the magnetic tunnel junction flows directly between the strap portion and the via and between the via and the lower metallic stud or the upper metallic stud.. . ... Crocus Technology Inc

Method for writing in a magnetic device

Method for programming a magnetic device including a plurality of magnetic logical unit mlu cells using a single programming current, each mlu cell includes a storage magnetic layer having a storage magnetization that is pinned at a low threshold temperature and freely orientable at a high threshold temperature. A programming line is physically separated from each of the plurality of mlu cells and configured for passing a programming current pulse for programming any one of the plurality of mlu cells. ... Crocus Technology Inc

Self-referenced mram cell and magnetic field sensor comprising the self-referenced mram cell

A self-referenced mram cell including a reference layer having a fixed reference magnetization, a sense layer having a free sense magnetization, a tunnel barrier, a biasing layer having bias magnetization and a biasing antiferromagnetic layer pinning the bias magnetization in a bias direction when mram cell is at temperature equal or below a bias threshold temperature. The bias magnetization is arranged for inducing a bias field adapted for biasing the sense magnetization in a direction opposed to the bias direction, such that the biased sense magnetization varies linearly in the presence of the external magnetic field, when the external magnetic field is oriented in a direction substantially perpendicular to the one of the reference magnetization. ... Crocus Technology Inc

Method for writing to a mram device configured for self-referenced read operation with improved reproducibly

A method for writing a mram device, including magnetic tunnel junction with a storage layer, a sense layer, and a spacer layer between the storage and sense layers. At least one of the storage and sense layers has a magnetic anisotropy axis. ... Crocus Technology Inc

Mlu based accelerometer using a magnetic tunnel junction

An mlu-based accelerometer including: at least one mlu including a tunnel barrier layer between a first magnetic layer having a fixed first magnetization direction and a second magnetic layer having a second magnetization direction that can be varied. A proof-mass includes a ferromagnetic material having a proof-mass magnetization inducing a proof-mass field, the proof-mass being elastically suspended such as to be deflected in at least one direction when subjected to an acceleration vector. ... Crocus Technology Inc

Armature-clad mram device

A magnetoresistive memory cell includes a magnetoresistive tunnel junction stack and a dielectric encapsulation layer covering sidewall portions of the stack and being opened over a top of the stack. A conductor is formed in contact with a top portion of the stack and covering the encapsulation layer. ... Crocus Technology Inc

Self-referenced multibit mram cell having a synthetic antiferromagnetic storage layer

A multibit mram cell including a magnetic tunnel junction including a sense layer having a freely orientable sense magnetization; a tunnel barrier layer; and a synthetic antiferromagnet storage layer having a first and second storage layer. The sense magnetization induces a dipolar field having a magnitude above a spin-flop field of the storage layer. ... Crocus Technology Inc

Multi-bit mram cell and method for writing and reading to such mram cell

A multi-bit magnetic random access memory (mram) cell including a magnetic tunnel junction including: a first magnetic storage layer, a second magnetic storage layer, a magnetic sense layer, a first spacer layer between the first magnetic storage layer and the magnetic sense layer, and a second spacer layer between the second magnetic storage layer and the sense layer. The first and second storage magnetization are switchable between m directions to store data corresponding to one of m2 logic states, with m>2. ... Crocus Technology Inc

Structure for thermally assisted mram

A mechanism is provided for fabricating a thermally assisted magnetoresistive random access memory device. A bottom thermal barrier is formed on a bottom contact. ... Crocus Technology Inc








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