new TOP 200 Companies filing patents this week

new Companies with the Most Patent Filings (2010+)




  

Crocus Technology Sa patents

Recent patent applications related to Crocus Technology Sa. Crocus Technology Sa is listed as an Agent/Assignee. Note: Crocus Technology Sa may have other listings under different names/spellings. We're not affiliated with Crocus Technology Sa, we're just tracking patents.

ARCHIVE: New 2017 2016 2015 2014 2013 2012 2011 2010 2009 | Company Directory "C" | Crocus Technology Sa-related inventors




Date Crocus Technology Sa patents (updated weekly) - BOOKMARK this page
04/20/17Self-referenced multibit mram cell having a synthetic antiferromagnetic storage layer
03/16/17Multi-bit mram cell and writing and reading to such mram cell
03/02/17Structure for thermally assisted mram
11/03/16Magnetic random access memory cell with a dual junction for ternary content addressable memory applications
09/01/16Method for measuring three-dimensional magnetic fields
08/18/16Magnetic sensor cell for measuring three-dimensional magnetic fields
08/18/16Magnetic sensor cell for measuring three-dimensional magnetic fields
08/18/16Self reference thermally assisted mram with low moment ferromagnet storage layer
03/17/16Thermally-assisted mram cells with improved reliability at writing
02/11/16Multibit self-reference thermally assisted mram
02/11/16Multibit self-reference thermally assisted mram
01/14/16Self-referenced mram cell that can be read with reduced power consumption
12/10/15Mram element with low writing temperature
12/03/15Self-referenced magnetic random access memory (mram) and writing to the mram cell with increased reliability and reduced power consumption
11/26/15Magnetoresistive element having enhanced exchange bias and thermal stability for spintronic devices
10/22/15Magnetic random access memory (mram) cell with low power consumption
10/15/15Multibit self-reference thermally assisted mram
10/15/15Structure for thermally assisted mram
10/08/15Self-referenced mram element and device having improved magnetic field
09/24/15Magnetic random access memory cell with a dual junction for ternary content addressable memory applications
09/24/15Magnetic logic unit (mlu) cell and amplifier having a linear magnetic signal
08/13/15Magnetic logic unit (mlu) cell and amplifier having a linear magnetic signal
06/25/15Method for writing to a random access memory (mram) cell with improved mram cell lifespan
05/14/15Self reference thermally assisted mram with low moment ferromagnet storage layer
05/07/15Mram element having improved data retention and low writing temperature
09/12/13Magnetic tunnel junction with an improved tunnel barrier
08/15/13High speed magnetic random access memory-based ternary cam
08/08/13Self-referenced mram element with linear sensing signal
07/18/13Mram cell and writing to the mram cell using a thermally assisted write operation with a reduced field current
06/27/13Self-referenced mram cell and writing the cell using a spin transfer torque write operation
06/13/13Self-referenced magnetic random access memory element comprising a synthetic storage layer
05/23/13Self-referenced mram cell with optimized reliability
04/04/13Self-reference magnetic random access memory (mram) cell comprising ferrimagnetic layers
03/28/13Magnetic random access memory (mram) cell, writing and reading the mram cell using a self-referenced read operation
01/31/13Method of counter-measuring against side-channel attacks
11/15/12Information processing device comprising a read-only memory and a patching the read-only memory
10/04/12Magnetic random access memory cell with a dual junction for ternary content addressable memory applications
07/19/12Magnetic tunnel junction comprising a polarizing layer
07/19/12Low power magnetic random access memory cell
06/21/12Multibit magnetic random access memory cell with improved read margin
05/17/12Multilevel magnetic element
05/03/12Thermally assisted magnetic random access memory element with improved endurance
01/12/12Method for writing in a mram-based memory device with reduced power consumption
01/12/12Magnetic device with optimized heat confinement
09/08/11Mram-based memory device with rotated gate
05/12/11Magnetic tunnel junction structure
05/12/11Magnetic memory with a thermally assisted spin transfer torque writing procedure using a low writing current
04/07/11Circuit for generating adjustable timing signals for sensing a self-referenced mram cell
01/06/11Ultimate magnetic random access memory-based ternary cam
12/30/10Magnetic element with thermally assisted writing
12/02/10Non-volatile logic devices using magnetic tunnel junctions
11/11/10Magnetic memory with a thermally assisted writing procedure and reduced writing field
09/30/10Magnetic memory with a thermally assisted writing procedure
08/19/10Active strap magnetic random access memory cells
05/06/10Ternary content addressable magnetoresistive random access memory cell







ARCHIVE: New 2017 2016 2015 2014 2013 2012 2011 2010 2009



###

This listing is an abstract for educational and research purposes is only meant as a recent sample of applications filed, not a comprehensive history. Freshpatents.com is not affiliated or associated with Crocus Technology Sa in any way and there may be associated servicemarks. This data is also published to the public by the USPTO and available for free on their website. Note that there may be alternative spellings for Crocus Technology Sa with additional patents listed. Browse our Agent directory for other possible listings. Page by FreshPatents.com

###




';