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Crossbar, Inc. patents


      
Recent patent applications related to Crossbar, Inc.. Crossbar, Inc. is listed as an Agent/Assignee. Note: Crossbar, Inc. may have other listings under different names/spellings. We're not affiliated with Crossbar, Inc., we're just tracking patents.

ARCHIVE: New 2014 2013 2012 2011 2010 2009 | Company Directory "C" | Crossbar, Inc.-related inventors



Search recent Press Releases: Crossbar, Inc.-related press releases
Count Application # Date Crossbar, Inc. patents (updated weekly) - BOOKMARK this page
12014026422609/18/14Integration of an amorphous silicon resistive switching device
22014026423809/18/14Scaling of filament based rram
32014026424209/18/14Disturb-resistant non-volatile memory device and method
42014026425009/18/14Low temperature in-situ doped silicon-based conductor material for memory cell
52014026899709/18/14Programming two-terminal memory cells with reduced program current
62014026899809/18/14Rram with dual mode operation
72014026900109/18/14Amorphous silicon rram with non-linear device and operation
82014026900209/18/14Two-terminal memory with intrinsic rectifying characteristic
92014022505508/14/14Resistive switching device for a non-volatile memory device
102014021735308/07/14Stackable non-volatile resistive switching memory device and method
112014019118007/10/14Low temperature p+ polycrystalline silicon material for non-volatile memory device
122014019258907/10/14Reduced diffusion in metal electrode for two-terminal memory
132014018535807/03/14Resistive random access memory with non-linear current-voltage relationship
142014015896806/12/14Noble metal / non-noble metal electrode for rram applications
152014014513505/29/14Sub-oxide interface layer for two-terminal memory
162014014659505/29/14Circuit for concurrent read operation and method therefor
172014013321105/15/14Resistive random access memory equalization and sensing
182014013321205/15/14Non-volatile counter utilizing a ferroelectric capacitor
192014013685205/15/14Secure circuit integrated with memory layer
202014013321105/15/14Resistive random access memory equalization and sensing
212014013321205/15/14Non-volatile counter utilizing a ferroelectric capacitor
222014013685205/15/14Secure circuit integrated with memory layer
232014012787605/08/14Pillar structure for memory device and method
242014012787605/08/14Pillar structure for memory device and method
252014009861904/10/14Non-volatile memory with overwrite capability and low write amplification
262014009861904/10/14Non-volatile memory with overwrite capability and low write amplification
272014009861904/10/14Non-volatile memory with overwrite capability and low write amplification
282014008423303/27/14Electrode structure for a non-volatile memory device and method
292014008423303/27/14Electrode structure for a non-volatile memory device and method
302014005453902/27/14Method and structure of monolithically integrated ic and resistive memory using ic foundry-compatible processes
312014003489802/06/14Switching device having a non-linear element
322014001489001/16/14Conductive path in switching material in a resistive random access memory device and control
332013029976911/14/13Line and space architecture for a non-volatile memory device
342013030134111/14/13Hereto resistive switching material layer in rram device and method
352013023409209/12/13Three dimension programmable resistive random accessed memory array with shared bitline and method
362013021424108/22/13Disturb-resistant non-volatile memory device and method
372013021424108/22/13Disturb-resistant non-volatile memory device and method
382013015745706/20/13Interconnects for stacked non-volatile memory device and method
392013015745706/20/13Interconnects for stacked non-volatile memory device and method
402013014841006/13/13Non-volatile variable capacitive device including resistive memory cell
412013014841006/13/13Non-volatile variable capacitive device including resistive memory cell
422013013437905/30/13Resistive memory using sige material
432013013441905/30/13Vertical diodes for non-volatile memory device
442013013437905/30/13Resistive memory using sige material
452013013441905/30/13Vertical diodes for non-volatile memory device
462013012268005/16/13Resistor structure for a non-volatile memory device and method
472013012268005/16/13Resistor structure for a non-volatile memory device and method
482013007568903/28/13Stackable non-volatile resistive switching memory device and method
492013003392302/07/13Circuit for concurrent read operation and method therefor
502013002707901/31/13Field programmable gate array utilizing two-terminal non-volatile memory
512013002708101/31/13Field programmable gate array utilizing two-terminal non-volatile memory
522013002054801/24/13Seed layer for a p+ silicon germanium material for a non-volatile memory device and method
532013000343601/03/13Amorphous silicon rram with non-linear device and operation
542012032770112/27/12Memory array architecture with two-terminal memory cells
552012032066012/20/12Write and erase scheme for resistive memory device
562012030587412/06/12Vertical diodes for non-volatile memory device
572012030587912/06/12Switching device having a non-linear element
582012030918812/06/12Method to improve adhesion for a silver filled oxide via for a non-volatile memory device
592012029894711/29/12Low temperature p+ silicon junction material for a non-volatile memory device
602012027374811/01/12Interconnects for stacked non-volatile memory device and method
612012025218310/04/12Method for obtaining smooth, continuous silver film
622012023665009/20/12Nand archtecture including resitive memory cells
632012022010008/30/12Pillar structure for memory device and method
642012018736407/26/12On/off ratio for non-volatile memory device and method
652012016616906/28/12Modeling technique for resistive random access memory (rram) cells
662012014216306/07/12P+ polysilicon material on aluminum for non-volatile memory device and method
672012011215505/10/12Interconnects for stacked non-volatile memory device and method
682012010803005/03/12Method for obtaining smooth, continuous silver film
692012008716904/12/12Circuit for concurrent read operation and method therefor
702012007437403/29/12Conductive path in switching material in a resistive random access memory device and control
712012007450703/29/12Integration of an amorphous silicon resistive switching device
722012007590703/29/12Resistor structure for a non-volatile memory device and method
732012004351902/23/12Device switching using layered device structure
742012004352002/23/12Disturb-resistant non-volatile memory device and method
752012004362102/23/12Stackable non-volatile resistive switching memory device and method
762012001280601/19/12Improved on/off ratio for non-volatile memory device and method
772012001550601/19/12Two terminal resistive switching device structure and method of fabricating
782012000703501/12/12Intrinsic programming current control for a rram
792012000836601/12/12Restive memory using sige material
802011031215112/22/11Pillar structure for memory device and method
812011030506412/15/11Interface control for improved switching in rram
822011030506512/15/11Non-volatile variable capacitive device including resistive memory cell
832011030506612/15/11Write and erase scheme for resistive memory device


ARCHIVE: New 2014 2013 2012 2011 2010 2009



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This listing is an abstract for educational and research purposes is only meant as a recent sample of applications filed, not a comprehensive history. Freshpatents.com is not affiliated or associated with Crossbar, Inc. in any way and there may be associated servicemarks. This data is also published to the public by the USPTO and available for free on their website. Note that there may be alternative spellings for Crossbar, Inc. with additional patents listed. Browse our Agent directory for other possible listings. Page by FreshPatents.com

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