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Crossbar, Inc. patents


      
Recent patent applications related to Crossbar, Inc.. Crossbar, Inc. is listed as an Agent/Assignee. Note: Crossbar, Inc. may have other listings under different names/spellings. We're not affiliated with Crossbar, Inc., we're just tracking patents.

ARCHIVE: New 2014 2013 2012 2011 2010 2009 | Company Directory "C" | Crossbar, Inc.-related inventors



Crossbar

Reduced diffusion in metal electrode for two-terminal memory

CrossbarInc

Resistive random access memory with non-linear current-voltage relationship

Search recent Press Releases: Crossbar, Inc.-related press releases
Count Application # Date Crossbar, Inc. patents (updated weekly) - BOOKMARK this page
12014019118007/10/14Low temperature p+ polycrystalline silicon material for non-volatile memory device
22014019258907/10/14Reduced diffusion in metal electrode for two-terminal memory
32014018535807/03/14Resistive random access memory with non-linear current-voltage relationship
42014015896806/12/14Noble metal / non-noble metal electrode for rram applications
52014014513505/29/14Sub-oxide interface layer for two-terminal memory
62014014659505/29/14Circuit for concurrent read operation and method therefor
72014013321105/15/14Resistive random access memory equalization and sensing
82014013321205/15/14Non-volatile counter utilizing a ferroelectric capacitor
92014013685205/15/14Secure circuit integrated with memory layer
102014013321105/15/14Resistive random access memory equalization and sensing
112014013321205/15/14Non-volatile counter utilizing a ferroelectric capacitor
122014013685205/15/14Secure circuit integrated with memory layer
132014012787605/08/14Pillar structure for memory device and method
142014012787605/08/14Pillar structure for memory device and method
152014009861904/10/14Non-volatile memory with overwrite capability and low write amplification
162014009861904/10/14Non-volatile memory with overwrite capability and low write amplification
172014009861904/10/14Non-volatile memory with overwrite capability and low write amplification
182014008423303/27/14Electrode structure for a non-volatile memory device and method
192014008423303/27/14Electrode structure for a non-volatile memory device and method
202014005453902/27/14Method and structure of monolithically integrated ic and resistive memory using ic foundry-compatible processes
212014003489802/06/14Switching device having a non-linear element
222014001489001/16/14Conductive path in switching material in a resistive random access memory device and control
232013029976911/14/13Line and space architecture for a non-volatile memory device
242013030134111/14/13Hereto resistive switching material layer in rram device and method
252013023409209/12/13Three dimension programmable resistive random accessed memory array with shared bitline and method
262013021424108/22/13Disturb-resistant non-volatile memory device and method
272013021424108/22/13Disturb-resistant non-volatile memory device and method
282013015745706/20/13Interconnects for stacked non-volatile memory device and method
292013015745706/20/13Interconnects for stacked non-volatile memory device and method
302013014841006/13/13Non-volatile variable capacitive device including resistive memory cell
312013014841006/13/13Non-volatile variable capacitive device including resistive memory cell
322013013437905/30/13Resistive memory using sige material
332013013441905/30/13Vertical diodes for non-volatile memory device
342013013437905/30/13Resistive memory using sige material
352013013441905/30/13Vertical diodes for non-volatile memory device
362013012268005/16/13Resistor structure for a non-volatile memory device and method
372013012268005/16/13Resistor structure for a non-volatile memory device and method
382013007568903/28/13Stackable non-volatile resistive switching memory device and method
392013003392302/07/13Circuit for concurrent read operation and method therefor
402013002707901/31/13Field programmable gate array utilizing two-terminal non-volatile memory
412013002708101/31/13Field programmable gate array utilizing two-terminal non-volatile memory
422013002054801/24/13Seed layer for a p+ silicon germanium material for a non-volatile memory device and method
432013000343601/03/13Amorphous silicon rram with non-linear device and operation
442012032770112/27/12Memory array architecture with two-terminal memory cells
452012032066012/20/12Write and erase scheme for resistive memory device
462012030587412/06/12Vertical diodes for non-volatile memory device
472012030587912/06/12Switching device having a non-linear element
482012030918812/06/12Method to improve adhesion for a silver filled oxide via for a non-volatile memory device
492012029894711/29/12Low temperature p+ silicon junction material for a non-volatile memory device
502012027374811/01/12Interconnects for stacked non-volatile memory device and method
512012025218310/04/12Method for obtaining smooth, continuous silver film
522012023665009/20/12Nand archtecture including resitive memory cells
532012022010008/30/12Pillar structure for memory device and method
542012018736407/26/12On/off ratio for non-volatile memory device and method
552012016616906/28/12Modeling technique for resistive random access memory (rram) cells
562012014216306/07/12P+ polysilicon material on aluminum for non-volatile memory device and method
572012011215505/10/12Interconnects for stacked non-volatile memory device and method
582012010803005/03/12Method for obtaining smooth, continuous silver film
592012008716904/12/12Circuit for concurrent read operation and method therefor
602012007437403/29/12Conductive path in switching material in a resistive random access memory device and control
612012007450703/29/12Integration of an amorphous silicon resistive switching device
622012007590703/29/12Resistor structure for a non-volatile memory device and method
632012004351902/23/12Device switching using layered device structure
642012004352002/23/12Disturb-resistant non-volatile memory device and method
652012004362102/23/12Stackable non-volatile resistive switching memory device and method
662012001280601/19/12Improved on/off ratio for non-volatile memory device and method
672012001550601/19/12Two terminal resistive switching device structure and method of fabricating
682012000703501/12/12Intrinsic programming current control for a rram
692012000836601/12/12Restive memory using sige material
702011031215112/22/11Pillar structure for memory device and method
712011030506412/15/11Interface control for improved switching in rram
722011030506512/15/11Non-volatile variable capacitive device including resistive memory cell
732011030506612/15/11Write and erase scheme for resistive memory device


ARCHIVE: New 2014 2013 2012 2011 2010 2009



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This listing is an abstract for educational and research purposes is only meant as a recent sample of applications filed, not a comprehensive history. Freshpatents.com is not affiliated or associated with Crossbar, Inc. in any way and there may be associated servicemarks. This data is also published to the public by the USPTO and available for free on their website. Note that there may be alternative spellings for Crossbar, Inc. with additional patents listed. Browse our Agent directory for other possible listings. Page by FreshPatents.com

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