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Crossbar, Inc. patents


      
Recent patent applications related to Crossbar, Inc.. Crossbar, Inc. is listed as an Agent/Assignee. Note: Crossbar, Inc. may have other listings under different names/spellings. We're not affiliated with Crossbar, Inc., we're just tracking patents.

ARCHIVE: New 2014 2013 2012 2011 2010 2009 | Company Directory "C" | Crossbar, Inc.-related inventors



Search recent Press Releases: Crossbar, Inc.-related press releases
Count Application # Date Crossbar, Inc. patents (updated weekly) - BOOKMARK this page
12014032016610/30/14Field programmable gate array utilizing two-terminal non-volatile memory
22014031229610/23/14Three-dimensional oblique two-terminal memory with enhanced electric field
32014026422609/18/14Integration of an amorphous silicon resistive switching device
42014026423809/18/14Scaling of filament based rram
52014026424209/18/14Disturb-resistant non-volatile memory device and method
62014026425009/18/14Low temperature in-situ doped silicon-based conductor material for memory cell
72014026899709/18/14Programming two-terminal memory cells with reduced program current
82014026899809/18/14Rram with dual mode operation
92014026900109/18/14Amorphous silicon rram with non-linear device and operation
102014026900209/18/14Two-terminal memory with intrinsic rectifying characteristic
112014022505508/14/14Resistive switching device for a non-volatile memory device
122014021735308/07/14Stackable non-volatile resistive switching memory device and method
132014019118007/10/14Low temperature p+ polycrystalline silicon material for non-volatile memory device
142014019258907/10/14Reduced diffusion in metal electrode for two-terminal memory
152014018535807/03/14Resistive random access memory with non-linear current-voltage relationship
162014015896806/12/14Noble metal / non-noble metal electrode for rram applications
172014014513505/29/14Sub-oxide interface layer for two-terminal memory
182014014659505/29/14Circuit for concurrent read operation and method therefor
192014013321105/15/14Resistive random access memory equalization and sensing
202014013321205/15/14Non-volatile counter utilizing a ferroelectric capacitor
212014013685205/15/14Secure circuit integrated with memory layer
222014012787605/08/14Pillar structure for memory device and method
232014009861904/10/14Non-volatile memory with overwrite capability and low write amplification
242014008423303/27/14Electrode structure for a non-volatile memory device and method
252014005453902/27/14Method and structure of monolithically integrated ic and resistive memory using ic foundry-compatible processes
262014003489802/06/14Switching device having a non-linear element
272014001489001/16/14Conductive path in switching material in a resistive random access memory device and control
282013029976911/14/13Line and space architecture for a non-volatile memory device
292013030134111/14/13Hereto resistive switching material layer in rram device and method
302013023409209/12/13Three dimension programmable resistive random accessed memory array with shared bitline and method
312013021424108/22/13Disturb-resistant non-volatile memory device and method
322013015745706/20/13Interconnects for stacked non-volatile memory device and method
332013014841006/13/13Non-volatile variable capacitive device including resistive memory cell
342013013437905/30/13Resistive memory using sige material
352013013441905/30/13Vertical diodes for non-volatile memory device
362013012268005/16/13Resistor structure for a non-volatile memory device and method
372013007568903/28/13Stackable non-volatile resistive switching memory device and method
382013003392302/07/13Circuit for concurrent read operation and method therefor
392013002707901/31/13Field programmable gate array utilizing two-terminal non-volatile memory
402013002708101/31/13Field programmable gate array utilizing two-terminal non-volatile memory
412013002054801/24/13Seed layer for a p+ silicon germanium material for a non-volatile memory device and method
422013000343601/03/13Amorphous silicon rram with non-linear device and operation
432012032770112/27/12Memory array architecture with two-terminal memory cells
442012032066012/20/12Write and erase scheme for resistive memory device
452012030587412/06/12Vertical diodes for non-volatile memory device
462012030587912/06/12Switching device having a non-linear element
472012030918812/06/12Method to improve adhesion for a silver filled oxide via for a non-volatile memory device
482012029894711/29/12Low temperature p+ silicon junction material for a non-volatile memory device
492012027374811/01/12Interconnects for stacked non-volatile memory device and method
502012025218310/04/12Method for obtaining smooth, continuous silver film
512012023665009/20/12Nand archtecture including resitive memory cells
522012022010008/30/12Pillar structure for memory device and method
532012018736407/26/12On/off ratio for non-volatile memory device and method
542012016616906/28/12Modeling technique for resistive random access memory (rram) cells
552012014216306/07/12P+ polysilicon material on aluminum for non-volatile memory device and method
562012011215505/10/12Interconnects for stacked non-volatile memory device and method
572012010803005/03/12Method for obtaining smooth, continuous silver film
582012008716904/12/12Circuit for concurrent read operation and method therefor
592012007437403/29/12Conductive path in switching material in a resistive random access memory device and control
602012007450703/29/12Integration of an amorphous silicon resistive switching device
612012007590703/29/12Resistor structure for a non-volatile memory device and method
622012004351902/23/12Device switching using layered device structure
632012004352002/23/12Disturb-resistant non-volatile memory device and method
642012004362102/23/12Stackable non-volatile resistive switching memory device and method
652012001280601/19/12Improved on/off ratio for non-volatile memory device and method
662012001550601/19/12Two terminal resistive switching device structure and method of fabricating
672012000703501/12/12Intrinsic programming current control for a rram
682012000836601/12/12Restive memory using sige material
692011031215112/22/11Pillar structure for memory device and method
702011030506412/15/11Interface control for improved switching in rram
712011030506512/15/11Non-volatile variable capacitive device including resistive memory cell
722011030506612/15/11Write and erase scheme for resistive memory device


ARCHIVE: New 2014 2013 2012 2011 2010 2009



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This listing is an abstract for educational and research purposes is only meant as a recent sample of applications filed, not a comprehensive history. Freshpatents.com is not affiliated or associated with Crossbar, Inc. in any way and there may be associated servicemarks. This data is also published to the public by the USPTO and available for free on their website. Note that there may be alternative spellings for Crossbar, Inc. with additional patents listed. Browse our Agent directory for other possible listings. Page by FreshPatents.com

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