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Crossbar Inc patents


      
Recent patent applications related to Crossbar Inc. Crossbar Inc is listed as an Agent/Assignee. Note: Crossbar Inc may have other listings under different names/spellings. We're not affiliated with Crossbar Inc, we're just tracking patents.

ARCHIVE: New 2015 2014 2013 2012 2011 2010 2009 | Company Directory "C" | Crossbar Inc-related inventors


Search recent Press Releases: Crossbar Inc-related press releases
Count Application # Date Crossbar Inc patents (updated weekly) - BOOKMARK this page
12015010228104/16/15Switching device having a non-linear element
22015002153801/22/15Device switching using layered device structure
32015000974501/08/15High operating speed resistive random access memory
42015001269401/08/15Hardware assisted meta data lookup
52014032016610/30/14Field programmable gate array utilizing two-terminal non-volatile memory
62014031229610/23/14Three-dimensional oblique two-terminal memory with enhanced electric field
72014026422609/18/14Integration of an amorphous silicon resistive switching device
82014026423809/18/14Scaling of filament based rram
92014026424209/18/14Disturb-resistant non-volatile memory device and method
102014026425009/18/14Low temperature in-situ doped silicon-based conductor material for memory cell
112014026899709/18/14Programming two-terminal memory cells with reduced program current
122014026899809/18/14Rram with dual mode operation
132014026900109/18/14Amorphous silicon rram with non-linear device and operation
142014026900209/18/14Two-terminal memory with intrinsic rectifying characteristic
152014022505508/14/14Resistive switching device for a non-volatile memory device
162014021735308/07/14Stackable non-volatile resistive switching memory device and method
172014019118007/10/14Low temperature p+ polycrystalline silicon material for non-volatile memory device
182014019258907/10/14Reduced diffusion in metal electrode for two-terminal memory
192014018535807/03/14Resistive random access memory with non-linear current-voltage relationship
202014015896806/12/14Noble metal / non-noble metal electrode for rram applications
212014014513505/29/14Sub-oxide interface layer for two-terminal memory
222014014659505/29/14Circuit for concurrent read operation and method therefor
232014013321105/15/14Resistive random access memory equalization and sensing
242014013321205/15/14Non-volatile counter utilizing a ferroelectric capacitor
252014013685205/15/14Secure circuit integrated with memory layer
262014012787605/08/14Pillar structure for memory device and method
272014009861904/10/14Non-volatile memory with overwrite capability and low write amplification
282014008423303/27/14Electrode structure for a non-volatile memory device and method
292014005453902/27/14Method and structure of monolithically integrated ic and resistive memory using ic foundry-compatible processes
302014003489802/06/14Switching device having a non-linear element
312014001489001/16/14Conductive path in switching material in a resistive random access memory device and control
322013029976911/14/13Line and space architecture for a non-volatile memory device
332013030134111/14/13Hereto resistive switching material layer in rram device and method
342013023409209/12/13Three dimension programmable resistive random accessed memory array with shared bitline and method
352013021424108/22/13Disturb-resistant non-volatile memory device and method
362013015745706/20/13Interconnects for stacked non-volatile memory device and method
372013014841006/13/13Non-volatile variable capacitive device including resistive memory cell
382013013437905/30/13Resistive memory using sige material
392013013441905/30/13Vertical diodes for non-volatile memory device
402013012268005/16/13Resistor structure for a non-volatile memory device and method
412013007568903/28/13Stackable non-volatile resistive switching memory device and method
422013003392302/07/13Circuit for concurrent read operation and method therefor
432013002707901/31/13Field programmable gate array utilizing two-terminal non-volatile memory
442013002708101/31/13Field programmable gate array utilizing two-terminal non-volatile memory
452013002054801/24/13Seed layer for a p+ silicon germanium material for a non-volatile memory device and method
462013000343601/03/13Amorphous silicon rram with non-linear device and operation
472012032770112/27/12Memory array architecture with two-terminal memory cells
482012032066012/20/12Write and erase scheme for resistive memory device
492012030587412/06/12Vertical diodes for non-volatile memory device
502012030587912/06/12Switching device having a non-linear element
512012030918812/06/12Method to improve adhesion for a silver filled oxide via for a non-volatile memory device
522012029894711/29/12Low temperature p+ silicon junction material for a non-volatile memory device
532012027374811/01/12Interconnects for stacked non-volatile memory device and method
542012025218310/04/12Method for obtaining smooth, continuous silver film
552012023665009/20/12Nand archtecture including resitive memory cells
562012022010008/30/12Pillar structure for memory device and method
572012018736407/26/12On/off ratio for non-volatile memory device and method
582012016616906/28/12Modeling technique for resistive random access memory (rram) cells
592012014216306/07/12P+ polysilicon material on aluminum for non-volatile memory device and method
602012011215505/10/12Interconnects for stacked non-volatile memory device and method
612012010803005/03/12Method for obtaining smooth, continuous silver film
622012008716904/12/12Circuit for concurrent read operation and method therefor
632012007437403/29/12Conductive path in switching material in a resistive random access memory device and control
642012007450703/29/12Integration of an amorphous silicon resistive switching device
652012007590703/29/12Resistor structure for a non-volatile memory device and method
662012004351902/23/12Device switching using layered device structure
672012004352002/23/12Disturb-resistant non-volatile memory device and method
682012004362102/23/12Stackable non-volatile resistive switching memory device and method
692012001280601/19/12Improved on/off ratio for non-volatile memory device and method
702012001550601/19/12Two terminal resistive switching device structure and fabricating
712012000703501/12/12Intrinsic programming current control for a rram
722012000836601/12/12Restive memory using sige material
732011031215112/22/11Pillar structure for memory device and method
742011030506412/15/11Interface control for improved switching in rram
752011030506512/15/11Non-volatile variable capacitive device including resistive memory cell
762011030506612/15/11Write and erase scheme for resistive memory device



ARCHIVE: New 2015 2014 2013 2012 2011 2010 2009



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This listing is an abstract for educational and research purposes is only meant as a recent sample of applications filed, not a comprehensive history. Freshpatents.com is not affiliated or associated with Crossbar Inc in any way and there may be associated servicemarks. This data is also published to the public by the USPTO and available for free on their website. Note that there may be alternative spellings for Crossbar Inc with additional patents listed. Browse our Agent directory for other possible listings. Page by FreshPatents.com

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