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Crossbar Inc patents

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Recent patent applications related to Crossbar Inc. Crossbar Inc is listed as an Agent/Assignee. Note: Crossbar Inc may have other listings under different names/spellings. We're not affiliated with Crossbar Inc, we're just tracking patents.

ARCHIVE: New 2016 2015 2014 2013 2012 2011 2010 2009 | Company Directory "C" | Crossbar Inc-related inventors




Date Crossbar Inc patents (updated weekly) - BOOKMARK this page
12/01/16 new patent  Recessed high voltage metal oxide semiconductor transistor for rram cell
11/24/16Non-stoichiometric resistive switching memory device and fabrication methods
09/15/16High density selector-based non volatile memory cell and fabrication
08/11/16Noble metal / non-noble metal electrode for rram applications
08/04/16Node retainer circuit incorporating rram
08/04/16Resistive memory cell with intrinsic current control
06/30/16Selector-based non-volatile cell fabrication utilizing ic-foundry compatible process
01/14/16Non-volatile memory cell utilizing volatile switching two terminal device and a mos transistor
01/07/16Sensing a non-volatile memory device utilizing selector device holding characteristics
11/26/15Resistive memory architecture and devices
11/05/15Integrative resistive memory in backend metal layers
09/17/15Selector device for two-terminal memory
09/03/15Nand array comprising parallel transistor and two-terminal switching device
08/27/15Monolithically integrated resistive memory using integrated-circuit foundry compatible processes
08/13/15Memory array architecture with two-terminal memory cells
08/13/15Scalable silicon based resistive memory device
08/13/15Low temperature deposition for silicon-based conductive film
07/16/15Two terminal resistive switching device structure and fabricating
07/02/15Memory system including pe count circuit and operating the same
07/02/15Three dimension programmable resistive random accessed memory array with shared bitline and method
06/04/15Guided path for forming a conductive filament in rram
05/28/15Resistive memory device and fabrication methods
05/14/15One time programmable and multi-level, two-terminal memory cell
04/16/15Switching device having a non-linear element
01/22/15Device switching using layered device structure
01/08/15High operating speed resistive random access memory
01/08/15Hardware assisted meta data lookup
10/30/14Field programmable gate array utilizing two-terminal non-volatile memory
10/23/14Three-dimensional oblique two-terminal memory with enhanced electric field
09/18/14Integration of an amorphous silicon resistive switching device
09/18/14Scaling of filament based rram
09/18/14Disturb-resistant non-volatile memory device and method
09/18/14Low temperature in-situ doped silicon-based conductor material for memory cell
09/18/14Programming two-terminal memory cells with reduced program current
09/18/14Rram with dual mode operation
09/18/14Amorphous silicon rram with non-linear device and operation
09/18/14Two-terminal memory with intrinsic rectifying characteristic
08/14/14Resistive switching device for a non-volatile memory device
08/07/14Stackable non-volatile resistive switching memory device and method
07/10/14Low temperature p+ polycrystalline silicon material for non-volatile memory device
07/10/14Reduced diffusion in metal electrode for two-terminal memory
07/03/14Resistive random access memory with non-linear current-voltage relationship
06/12/14Noble metal / non-noble metal electrode for rram applications
05/29/14Sub-oxide interface layer for two-terminal memory
05/29/14Circuit for concurrent read operation and method therefor
05/15/14Resistive random access memory equalization and sensing
05/15/14Non-volatile counter utilizing a ferroelectric capacitor
05/15/14Secure circuit integrated with memory layer
05/08/14Pillar structure for memory device and method
04/10/14Non-volatile memory with overwrite capability and low write amplification
03/27/14Electrode structure for a non-volatile memory device and method
02/27/14Method and structure of monolithically integrated ic and resistive memory using ic foundry-compatible processes
02/06/14Switching device having a non-linear element
01/16/14Conductive path in switching material in a resistive random access memory device and control
11/14/13Line and space architecture for a non-volatile memory device
11/14/13Hereto resistive switching material layer in rram device and method
09/12/13Three dimension programmable resistive random accessed memory array with shared bitline and method
08/22/13Disturb-resistant non-volatile memory device and method
06/20/13Interconnects for stacked non-volatile memory device and method
06/13/13Non-volatile variable capacitive device including resistive memory cell
05/30/13Resistive memory using sige material
05/30/13Vertical diodes for non-volatile memory device
05/16/13Resistor structure for a non-volatile memory device and method
03/28/13Stackable non-volatile resistive switching memory device and method
02/07/13Circuit for concurrent read operation and method therefor
Patent Packs
01/31/13Field programmable gate array utilizing two-terminal non-volatile memory
01/31/13Field programmable gate array utilizing two-terminal non-volatile memory
01/24/13Seed layer for a p+ silicon germanium material for a non-volatile memory device and method
01/03/13Amorphous silicon rram with non-linear device and operation
12/27/12Memory array architecture with two-terminal memory cells
12/20/12Write and erase scheme for resistive memory device
12/06/12Vertical diodes for non-volatile memory device
12/06/12Switching device having a non-linear element
12/06/12Method to improve adhesion for a silver filled oxide via for a non-volatile memory device
11/29/12Low temperature p+ silicon junction material for a non-volatile memory device
11/01/12Interconnects for stacked non-volatile memory device and method
10/04/12Method for obtaining smooth, continuous silver film
09/20/12Nand archtecture including resitive memory cells
08/30/12Pillar structure for memory device and method
07/26/12On/off ratio for non-volatile memory device and method
Patent Packs
06/28/12Modeling technique for resistive random access memory (rram) cells
06/07/12P+ polysilicon material on aluminum for non-volatile memory device and method
05/10/12Interconnects for stacked non-volatile memory device and method
05/03/12Method for obtaining smooth, continuous silver film
04/12/12Circuit for concurrent read operation and method therefor
03/29/12Conductive path in switching material in a resistive random access memory device and control
03/29/12Integration of an amorphous silicon resistive switching device
03/29/12Resistor structure for a non-volatile memory device and method
02/23/12Device switching using layered device structure
02/23/12Disturb-resistant non-volatile memory device and method
02/23/12Stackable non-volatile resistive switching memory device and method
01/19/12Improved on/off ratio for non-volatile memory device and method
01/19/12Two terminal resistive switching device structure and fabricating
01/12/12Intrinsic programming current control for a rram
01/12/12Restive memory using sige material
12/22/11Pillar structure for memory device and method
12/15/11Interface control for improved switching in rram
12/15/11Non-volatile variable capacitive device including resistive memory cell
12/15/11Write and erase scheme for resistive memory device







ARCHIVE: New 2016 2015 2014 2013 2012 2011 2010 2009



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