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Crossbar Inc patents

Recent patent applications related to Crossbar Inc. Crossbar Inc is listed as an Agent/Assignee. Note: Crossbar Inc may have other listings under different names/spellings. We're not affiliated with Crossbar Inc, we're just tracking patents.

ARCHIVE: New 2018 2017 2016 2015 2014 2013 2012 2011 2010 2009 | Company Directory "C" | Crossbar Inc-related inventors

Liner layer for dielectric block layer

Two-terminal memory devices can be formed in part within a dielectric material that is electrically insulating and operates as a blocking layer to mitigate diffusion of metal particles employed in integrated circuit fabrication. This dielectric material can be protected from other fabrication processes corrosive to the dielectric material (e.g., CMP,... Crossbar Inc

Non-volatile resistive memory configuration cell for field programmable gate array

Providing for a configuration cells for junction nodes of a field programmable gate array (FPGA) is described herein. By way of example, a configuration cell can comprise non-volatile resistive switching memory to facilitate programmable storage of data as an input to a control circuit of a junction node. The control... Crossbar Inc

Using aluminum as etch stop layer

A two-terminal resistive switching device (TTRSD) such as a non-volatile two-terminal memory device or a volatile two-terminal selector device can be formed according to a manufacturing process. The process can include forming an etch stop layer comprising aluminum and can include forming a buffer layer below the etch stop layer... Crossbar Inc

Sensing a non-volatile memory device utilizing selector device holding characteristics

Providing for improved sensing of non-volatile resistive memory to achieve higher sensing margins, is described herein. The sensing can leverage current-voltage characteristics of a volatile selector device within the resistive memory. A disclosed sensing process can comprise activating the selector device with an activation voltage, and then lowering the activation... Crossbar Inc

Device switching using layered device structure

A resistive switching device. The device includes a first electrode comprising a first metal material overlying the first dielectric material and a switching material comprising an amorphous silicon material. The device includes a second electrode comprising at least a second metal material. In a specific embodiment, the device includes a... Crossbar Inc

Regulating interface layer formation for two-terminal memory

Provision of fabrication, construction, and/or assembly of a two-terminal memory device is described herein. The two-terminal memory device can include an active region with a silicon bearing layer, an interface layer, and an active metal layer. The interface layer can be grown on the silicon bearing layer, and the growth... Crossbar Inc

ARCHIVE: New 2018 2017 2016 2015 2014 2013 2012 2011 2010 2009


This listing is an abstract for educational and research purposes is only meant as a recent sample of applications filed, not a comprehensive history. is not affiliated or associated with Crossbar Inc in any way and there may be associated servicemarks. This data is also published to the public by the USPTO and available for free on their website. Note that there may be alternative spellings for Crossbar Inc with additional patents listed. Browse our Agent directory for other possible listings. Page by