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D2s Inc patents


Recent patent applications related to D2s Inc. D2s Inc is listed as an Agent/Assignee. Note: D2s Inc may have other listings under different names/spellings. We're not affiliated with D2s Inc, we're just tracking patents.

ARCHIVE: New 2018 2017 2016 2015 2014 2013 2012 2011 2010 2009 | Company Directory "D" | D2s Inc-related inventors


Bias correction for lithography

Methods include inputting an array of pixels, where each pixel in the array of pixels has a pixel dose. The array of pixels represents dosage on a surface to be exposed with a plurality of patterns, each pattern of the plurality of patterns having an edge. A target bias is... D2s Inc

Method and system for forming a pattern on a reticle using charged particle beam lithography

A method and system for fracturing or mask data preparation is disclosed in which a desired substrate pattern for a substrate is input. A plurality of charged particle beam shots is then determined which will form a reticle pattern on a reticle, where the reticle pattern will produce a substrate... D2s Inc

Method and system for forming patterns using charged particle beam lithography with variable pattern dosage

A method and system for fracturing or mask data preparation or optical proximity correction or proximity effect correction or mask process correction is disclosed in which a set of shaped beam shots is determined that is capable of forming a pattern on a surface, where the set of shots provides... D2s Inc

Method and system for forming patterns using shaped beam lithography including temperature effects

In some embodiments, data is received defining a plurality of shot groups that will be delivered by a charged particle beam writer during an overall time period, where a first shot group will be delivered onto a first designated area at a first time period. A temperature of the first... D2s Inc

Method and system for forming patterns with charged particle beam lithography

In a method for fracturing or mask data preparation or mask process correction for charged particle beam lithography, a plurality of shots are determined that will form a pattern on a surface, where shots are determined so as to reduce sensitivity of the resulting pattern to changes in beam blur... D2s Inc








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