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Diodes Incorporated patents


Recent patent applications related to Diodes Incorporated. Diodes Incorporated is listed as an Agent/Assignee. Note: Diodes Incorporated may have other listings under different names/spellings. We're not affiliated with Diodes Incorporated, we're just tracking patents.

ARCHIVE: New 2018 2017 2016 2015 2014 2013 2012 2011 2010 2009 | Company Directory "D" | Diodes Incorporated-related inventors


Thermal and power optimization for linear regulator

A power supply includes a power converter configured to convert an input voltage to a target output dc voltage in response to a feedback signal, the feedback signal having a value. The power supply also includes a regulator coupled to the power converter and configured to generate an output power status signal, which maybe in one of two states depending whether an output current from the regulator is above or below a target current over a preset time duration. ... Diodes Incorporated

Self-aligned dual trench device

A power mosfet or a power rectifier may be fabricated according to the invention to include a gate trench and a field plate trench. Both trenches can be formed with a two-step etching process as described in detail in the specification. ... Diodes Incorporated

Magnetic alarm system

A security system comprises a hall sensor, two comparators, and a logic unit. The system takes periodic measurement of the magnetic field in the vicinity of the hall sensor and compares the measured voltage to two known references voltages. ... Diodes Incorporated

Trenched mos gate controlled rectifier

A trenched mos gate controlled rectifier has an asymmetric trench structure between the active area of active trenches and the termination area of termination trenches. The asymmetric trench structure has a gate electrode on one side of the trench to turn on and off the channel of the mos structure effectively and a field plate structure on the other side with field dielectric sufficiently thick in order to sustain the high electric field during the reverse bias condition.. ... Diodes Incorporated

Multi-trench semiconductor devices

A mosfet device or a rectifier device with improved rdson and bv performance has a repetitive pattern of field plate trenches disposed in a semiconductor chip. The semiconductor chip comprises a doped epi-layer, in which the dopant concentration progressively decreases from the top of the chip surface towards the bottom of the chip. ... Diodes Incorporated

Self-aligned dual trench device

A power mosfet or a power rectifier may be fabricated according to the invention to include a gate trench and a field plate trench. Both trenches can be formed with a two-step etching process as described in detail in the specification. ... Diodes Incorporated

Chip scale package

A novel semiconductor chip scale package encapsulates semiconductor chip on the device side, the non-device side, and the four edges with a mold compound. One process to fabricate such a semiconductor chip scale package involves forming trenches on the surface of a wafer around the chips and filling the trenches and covering the device side of the chips with a first mold compound. ... Diodes Incorporated








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