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Dongbu Hitek Co Ltd
Dongbu Hitek Co Ltd_20100128

Dongbu Hitek Co Ltd patents


Recent patent applications related to Dongbu Hitek Co Ltd. Dongbu Hitek Co Ltd is listed as an Agent/Assignee. Note: Dongbu Hitek Co Ltd may have other listings under different names/spellings. We're not affiliated with Dongbu Hitek Co Ltd, we're just tracking patents.

ARCHIVE: New 2018 2017 2016 2015 2014 2013 2012 2011 2010 2009 | Company Directory "D" | Dongbu Hitek Co Ltd-related inventors


Super junction mosfet and manufacturing the same

A super junction MOSFET includes a substrate having a first conductive type, an epitaxial layer formed on the substrate, a set of pillars extending from the substrate through the epitaxial layer, the set of pillars being spaced apart from each other, a set of first wells, the set of first... Dongbu Hitek Co Ltd

Mems microphone and manufacturing the same

A MEMS microphone includes a substrate having a cavity, a back plate disposed over the substrate to cover the cavity and having a plurality of acoustic holes, a diaphragm disposed over the substrate to cover the cavity, the diaphragm being disposed under the back plate, including a venting hole communicating... Dongbu Hitek Co Ltd

Image sensor and sensing method thereof

An image sensor includes a pixel array including a plurality of unit pixels in a matrix including rows and columns, a selection unit configured to select outputs of some of the columns of the pixel array and output selection output signals, and an analog-digital conversion block including a plurality of... Dongbu Hitek Co Ltd

Mems microphone and manufacturing the same

A MEMS microphone includes a substrate having a cavity, a back plate disposed over the substrate, a diaphragm being disposed between the substrate and the back plate and being spaced apart from the substrate and the back plate and at least one anti-buckling portion provided between the substrate and the... Dongbu Hitek Co Ltd

Bipolar junction transistor and manufacturing the same

A bipolar junction transistor having a relatively reduced size and an improved current gain and a method of manufacturing the same are disclosed. The bipolar junction transistor includes a plurality of emitter regions disposed in a substrate, a plurality of base regions disposed in the substrate and configured to surround... Dongbu Hitek Co Ltd

Mems microphone and manufacturing the same

A MEMS microphone includes a substrate having a cavity, a back plate disposed over the substrate and having a plurality of acoustic holes, a diaphragm disposed between the substrate and the back plate, and an anchor extending from a circumference of the diaphragm to be connected with an end portion... Dongbu Hitek Co Ltd

Mems microphone and manufacturing the same

A MEMS microphone includes a substrate having a cavity, a back plate disposed over the substrate and having a plurality of acoustic holes, a diaphragm disposed over the substrate to cover the cavity, the diaphragm being disposed under the back plate to be spaced apart from the back plate, including... Dongbu Hitek Co Ltd

Gate electrode structure and high voltage semiconductor device having the same

A gate electrode structure and a high voltage semiconductor device having the same are disclosed. The gate electrode structure includes a gate insulation layer pattern disposed on a substrate, a gate electrode disposed on the gate insulating layer pattern and having at least one opening at a first side portion... Dongbu Hitek Co Ltd

Image sensor and sensing image

An image sensor includes a pixel array unit including an active pixel area including active pixels, a first dark area including first dark pixels, and a second dark area including second dark pixels, an offset extractor configured to extract a final dark offset value, and a corrector configured to correct... Dongbu Hitek Co Ltd

High voltage semiconductor device

A high voltage semiconductor device includes a gate electrode structure disposed on a substrate, a source region disposed in the substrate to be adjacent to one side of the gate electrode structure, a first drift region disposed in the substrate to be adjacent to another side of the gate electrode... Dongbu Hitek Co Ltd

Apparatus and adjusting color of display apparatus

A display apparatus is disclosed. The display apparatus includes a converter configured to convert image pixel values corresponding to three primary colors (e.g., red, green and blue) into tri-stimulus values, a first maximum value unit configured to output a maximum value of the image pixel values as a first maximum... Dongbu Hitek Co Ltd

Isolation structure and image sensor having the same

Disclosed is an image sensor having an isolation structure. The isolation structure includes a deep well region of a first conductive type disposed in a substrate of a second conductive type and an isolation region disposed between charge accumulation regions for accumulating photo-charges in order to electrically isolate the charge... Dongbu Hitek Co Ltd

Semiconductor gas sensor and manufacturing the same

A semiconductor gas sensor includes a substrate having a cavity, a first insulation layer formed on the substrate, including an exposure hole formed at a position corresponding to the cavity and a peripheral portion of the cavity, a second insulation layer formed on the first insulation layer, covering the exposure... Dongbu Hitek Co Ltd

Sensing circuit and touch sensor including the same

A sensing circuit and a touch sensor including the same are disclosed. The sensing circuit includes a current provider configured to provide a first current between a first power source and a first node and a second current between the first node and a second power source, a bias unit... Dongbu Hitek Co Ltd

Backside illuminated image sensor and manufacturing the same

A backside illuminated image sensor includes a substrate having a frontside surface and a backside surface, a photodiode disposed in the substrate, an insulating layer disposed on the backside surface and a fixed charge layer disposed on the insulating layer. A charge accumulation region capable of being used as a... Dongbu Hitek Co Ltd

Image sensor

An image sensor includes a pixel array including a plurality of unit pixels in a matrix including rows and columns. The matrix being divided into a plurality of groups and each of the plurality of groups includes two or more different columns, a binning sampling unit configured to sample outputs... Dongbu Hitek Co Ltd

Semiconductor gas sensor and manufacturing the same

In embodiments, a semiconductor gas sensor includes a substrate having a cavity, a first insulation layer formed on the substrate, including an exposure hole formed at a position corresponding to the cavity and a peripheral portion of the cavity, a second insulation layer formed on the first insulation layer, covering... Dongbu Hitek Co Ltd

Image sensor

An image sensor is disclosed. The image sensor includes a pixel array including a plurality of pixel units, a controller configured to drive the pixel array, and an analog-digital conversion block configured to convert a sensing signal output from the pixel array to a digital signal, wherein each of the... Dongbu Hitek Co Ltd

Image sensor and manufacturing the same

An image sensor includes a first charge storage region of a first conductive type disposed in a substrate, a second charge storage region of a second conductive type disposed on one side of the first charge storage region, a first floating diffusion region spaced apart from the first charge storage... Dongbu Hitek Co Ltd

Bipolar junction transistor and manufacturing the same

A bipolar junction transistor includes a first well region having a first conductive type, a second well region disposed adjacent to the first well region and having a second conductive type, an emitter disposed on the first well region and having the second conductive type, a base disposed on the... Dongbu Hitek Co Ltd

Bipolar junction transistor and manufacturing the same

A bipolar junction transistor includes a first well region having a first conductive type, a second well region disposed adjacent to the first well region and having a second conductive type, a base disposed on the first well region and having the first conductive type, an emitter disposed on the... Dongbu Hitek Co Ltd

Touch sensor and touch sensing method

A touch sensor includes a panel including display pixels and sensing nodes, a touch-sensing block configured to sense a change in capacitance of the sensing nodes, and a timing controller configured to generate state information based on a polarity of data and/or an inflow of electrostatic discharge to the panel... Dongbu Hitek Co Ltd

Apparatus for touch sensor test

An apparatus can include a test power supplier comprising a power supply to sense resistance between electrodes of a touch sensor, and a comparison unit configured to compare the sensed resistance between the electrodes with an allowable threshold to output a comparison result.... Dongbu Hitek Co Ltd

Touch sensor, display apparatus including the same, and sensing touch panel

A touch sensor is disclosed. The touch sensor includes a touch panel including sensing nodes arranged in a matrix form and sensing lines connected to the sensing nodes, a touch sensing unit for providing driving signals for driving the sensing nodes, and a selector including a plurality of multiplexers for... Dongbu Hitek Co Ltd








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