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Efficient Power Conversion Corporation patents

Recent patent applications related to Efficient Power Conversion Corporation. Efficient Power Conversion Corporation is listed as an Agent/Assignee. Note: Efficient Power Conversion Corporation may have other listings under different names/spellings. We're not affiliated with Efficient Power Conversion Corporation, we're just tracking patents.

ARCHIVE: New 2018 2017 2016 2015 2014 2013 2012 2011 2010 2009 | Company Directory "E" | Efficient Power Conversion Corporation-related inventors

Multi-step surface passivation structures and methods for fabricating same

A gallium nitride (GaN) transistor which includes two or more insulator semiconductor interface regions (insulators). A first insulator disposed between the gate and drain (near the gate) minimizes the gate leakage and fields near the gate that cause high gate-drain charge (Qgd). A second insulator (or multiple insulators), disposed between... Efficient Power Conversion Corporation

Enhancement mode fet gate driver ic

A fully integrated GaN driver comprising a digital logic signal inverter, a level shifter circuit, a UVLO circuit, an output buffer stage, and (optionally) a FET to be driven, all integrated in a single package. The level shifter circuit converts a ground reference 0-5 V digital signal at the input... Efficient Power Conversion Corporation

Gan transistors with polysilicon layers used for creating additional components

A GaN transistor with polysilicon layers for creating additional components for an integrated circuit and a method for manufacturing the same. The GaN device includes an EPI structure and an insulating material disposed over EPI structure. Furthermore, one or more polysilicon layers are disposed in the insulating material with the... Efficient Power Conversion Corporation

Gate with self-aligned ledge for enhancement mode gan transistors

An enhancement-mode GaN transistor with reduced gate leakage current between a gate contact and a 2DEG region and a method for manufacturing the same. The enhancement-mode GaN transistor including a GaN layer, a barrier layer disposed on the GaN layer with a 2DEG region formed at an interface between the... Efficient Power Conversion Corporation

Semiconductor devices with back surface isolation

Circuits, structures and techniques for independently connecting a surrounding material in a part of a semiconductor device to a contact of its respective device. To achieve this, a combination of one or more conductive wells that are electrically isolated in at least one bias polarity are provided.... Efficient Power Conversion Corporation

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This listing is an abstract for educational and research purposes is only meant as a recent sample of applications filed, not a comprehensive history. is not affiliated or associated with Efficient Power Conversion Corporation in any way and there may be associated servicemarks. This data is also published to the public by the USPTO and available for free on their website. Note that there may be alternative spellings for Efficient Power Conversion Corporation with additional patents listed. Browse our Agent directory for other possible listings. Page by