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Epistar Corporation patents


Recent patent applications related to Epistar Corporation. Epistar Corporation is listed as an Agent/Assignee. Note: Epistar Corporation may have other listings under different names/spellings. We're not affiliated with Epistar Corporation, we're just tracking patents.

ARCHIVE: New 2018 2017 2016 2015 2014 2013 2012 2011 2010 2009 | Company Directory "E" | Epistar Corporation-related inventors


Light-emitting device

The present disclosure provides a light-emitting device. The light-emitting device includes a substrate, a light-emitting stack on the substrate, and a semiconductor window layer comprising AlGaInP series material disposed between the substrate and the light-emitting stack.... Epistar Corporation

Therapeutic light-emitting module

A light-emitting module includes a carrier, a plurality of light-emitting units, and a protection layer. The carrier has a lighting portion and an extending portion. The plurality of light-emitting units is disposed on the lighting portion. The protection layer covers the plurality of light-emitting units and the lighting portion, and... Epistar Corporation

Optoelectronic device and manufacturing the same

An optoelectronic device, comprising a first semiconductor layer comprising four boundaries comprising two longer sides and two shorter sides; a second semiconductor layer formed on the first semiconductor layer; and a plurality of first conductive type electrodes formed on the first semiconductor layer, wherein one first part of the plurality... Epistar Corporation

Light-emitting device and manufacturing method thereof

A light-emitting device includes a light-emitting element, a light pervious layer, an electrode defining layer, a first soldering pad and a second soldering pad. The light-emitting element has an upper surface, a bottom surface, and a lateral surface arranged between the upper surface and the bottom surface. The light pervious... Epistar Corporation

Light emitting device with reflective electrode

A light-emitting device, comprises a semiconductor light emitting stack; and an electrode on the semiconductor light emitting stack, the electrode comprising an adhesion layer, comprising chromium (Cr) or rhodium (Rh); a mirror layer, formed on the adhesion layer and comprising silver (Ag) or aluminum (Al); a barrier layer, formed on... Epistar Corporation

Light-emitting device

A light-emitting device is provided. comprises: a light-emitting stack comprising an active layer emitting a first light having a first peak wavelength λ nm; and an adjusting element stacked on and electrically connected to the active layer, wherein the adjusting element comprises a diode emitting a second light having a... Epistar Corporation

Light emitting device

This disclosure discloses a light-emitting device. The light-emitting device comprises a light-emitting stack having a first-type semiconductor layer, a second-type semiconductor layer, and an active layer formed between the first-type semiconductor layer and the second-type semiconductor layer; a reflective structure formed on the first-type semiconductor layer; and a first interface... Epistar Corporation

Light-emitting device

A light-emitting device includes a semiconductor stack including a first semiconductor layer, a second semiconductor layer, and an active layer emitting an UV light, formed between the first semiconductor layer and the second semiconductor layer; a first transparent conductive layer formed on the second semiconductor layer, the first transparent conductive... Epistar Corporation

Light-emitting device and manufacturing method thereof

A light-emitting device comprises a transparent substrate, an LED die on the transparent substrate, a second substrate on the LED die, and two electrode pins located between the transparent substrate and the second substrate. The LED die comprises a first surface, a second surface opposite to the first surface, and... Epistar Corporation

Light-emitting device and manufacturing method thereof

A light-emitting device includes a light-emitting element, a wavelength converting layer and a light-adjusting layer. The light-emitting element has a first upper surface, a bottom surface, and a lateral surface between the first upper surface and the bottom surface. The wavelength converting layer includes a plurality of wavelength converting particles,... Epistar Corporation

Light-emitting diode

A light-emitting diode comprises: a first light-emitting structure, comprising: a first area comprising a side wall; a second area; and a first isolation path having an electrode isolation layer between the first area and the second area, wherein the side wall of the first area is in the first isolation... Epistar Corporation

Light-emitting device

A light-emitting device is provided. The light-emitting device comprises: an epitaxial structure comprising a first DBR stack, a light-emitting stack and a second DBR stack and a contact layer in sequence; an electrode on the epitaxial structure; a current blocking layer between the contact layer and the electrode; a first... Epistar Corporation

Light-emitting device

A light-emitting device of an embodiment of the present application comprises light-emitting units; a transparent structure having cavities configured to accommodate at least one of the light-emitting units; and a conductive element connecting at least two of the light-emitting units.... Epistar Corporation

Light-emitting structure

A light-emitting structure includes an epitaxial structure including a plurality of trenches; a conductive connecting layer, disposed under the epitaxial structure; a first isolation layer; a crossover metal layer, disposed under the first isolation layer and including a plurality of protruding portions protruding into the epitaxial structure through the plurality... Epistar Corporation

High power semiconductor device

This application provides a high power semiconductor device, which is characterized by forming two diodes connected in parallel and a schottky contact on a channel layer to lower the turn-on voltage and turn-on resistance of the high power semiconductor device at the same time and to enhance the breakdown voltage.... Epistar Corporation

Optoelectronic device and the manufacturing method thereof

The present disclosure is related to an optoelectronic device comprising a semiconductor stack comprising a first surface and a second surface opposite to the first surface; a first contact layer on the first surface; and a second contact layer on the second surface, wherein the second contact layer is not... Epistar Corporation

Light-emitting device

A light-emitting device is provided. The light-emitting device comprises The light-emitting device comprises a light-emitting stack comprising a first semiconductor layer, a second semiconductor layer and an active layer between the first semiconductor layer and the second semiconductor layer; and a third semiconductor layer on the light-emitting stack and comprising... Epistar Corporation

Optoelectronic element

... Epistar Corporation

Light-emitting apparatus

A light-emitting apparatus includes a supporting element, a light-emitting device, and a connecting pin. The light-emitting device has a pair of conductive pads and is disposed on the supporting element. The connecting pin is inserted from the side surface of the supporting element and electrically connected to one of the... Epistar Corporation

Light-emitting device and manufacturing method thereof

A light-emitting device comprises a carrier; a first semiconductor element formed on the carrier and comprising a first semiconductor structure and a second semiconductor structure, wherein the second semiconductor structure is closer to the carrier than the first semiconductor structure is, the first semiconductor structure comprises a first active layer... Epistar Corporation

Semiconductor light-emitting device

A semiconductor light-emitting device comprises an epitaxial structure comprising an main light-extraction surface, a lower surface opposite to the main light-extraction surface, a side surface connecting the main light-extraction surface and the lower surface, a first portion and a second portion between the main light-extraction surface and the first portion,... Epistar Corporation

Method of making a light-emitting device

A method of manufacturing a light-emitting device includes: providing a substrate; forming a light-emitting structure comprising an active layer on the substrate; forming a protective layer having a first thickness on the light-emitting structure; etching the protective layer such that the protective layer has a second thickness less than the... Epistar Corporation

Optoelectronic semiconductor device with barrier layer

An optoelectronic semiconductor device comprises a barrier layer, a first semiconductor layer on the barrier layer, the first semiconductor layer comprising a first dopant and a second dopant, and a second semiconductor layer beneath the barrier layer, the second semiconductor comprising the second dopant, wherein, in the first semiconductor layer,... Epistar Corporation

Light-emitting device and manufacturing thereof

The present disclosure provides a method of manufacturing a light-emitting device, which comprises providing a first substrate and a plurality of semiconductor stacked blocks comprising a first semiconductor stacked block and a second semiconductor stacked block on the first substrate, and each of the plurality semiconductor stacked blocks comprises a... Epistar Corporation

Heterogeneously integrated semiconductor device and manucacturing method thereof

A heterogeneously integrated semiconductor devices includes a base substrate; a Ge-containing film formed on the base substrate; a PMOSFET transistor having a first fin formed on the Ge-containing film; and a NMOSFET transistor having a second fin formed on the Ge-containing film; wherein the PMOSFET transistor and the NMOSFET transistor... Epistar Corporation

Method of selectively transferring semiconductor device

A method of transferring multiple semiconductor devices from a first substrate to a second substrate comprises the steps of forming the multiple semiconductor devices adhered on the first substrate, wherein the multiple semiconductor devices comprises a first semiconductor device and a second semiconductor device, and the first semiconductor device and... Epistar Corporation

Light-emitting device

A light-emitting device comprises a semiconductor stack comprising a first semiconductor layer, a second semiconductor layer, and an active layer formed between the first semiconductor layer and the second semiconductor layer; a first pad electrically connected to the first semiconductor layer; a second pad comprising multiple sidewalls electrically connected to... Epistar Corporation

Light-emitting element having a plurality of light-emitting structures

A light-emitting device includes a first semiconductor layer; a first, a second and a third light-emitting structures formed on the same first semiconductor layer; a first trench between the first and the second light-emitting structures; a second trench between the second and the third light-emitting structures, wherein the first and... Epistar Corporation

Light-emitting device having a patterned substrate and the method thereof

A light-emitting device comprises a textured substrate comprising a plurality of textured structures, wherein the textured structures and the textured substrate are both composed of sapphire; and a light-emitting stack overlaying the textured substrate, comprising a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor... Epistar Corporation

Light-emitting device

A light-emitting device includes: a rectangular shape with a 1st side, a 2nd side opposite to the 1st side, and a 3rd side connecting the 1st and the 2nd sides; a first electrode pad formed adjacent to the 3rd side; a second electrode pad formed adjacent to the 2nd side;... Epistar Corporation

Optoelectronic element

An optoelectronic element includes an optoelectronic unit, a first metal layer, a second metal layer, a conductive layer and a transparent structure. The optoelectronic unit has a central line in a top view, a top surface, and a bottom surface. The second metal layer is formed on the top surface,... Epistar Corporation

Light emitting structure and a manufacturing method thereof

A light-emitting structure includes a semiconductor light-emitting element, a first connection point and a reflective element. The semiconductor light-emitting element includes a bottom surface, a top surface opposite to the bottom surface, and a side surface arranged between the bottom surface and the top surface. The first connection point is... Epistar Corporation

Light-emitting device and manufacturing method thereof

The present disclosure provides a light-emitting device and manufacturing method thereof. The light-emitting device comprising: a light-emitting stack; and a semiconductor layer having a first surface connecting to the light-emitting stack, a second surface opposite to the first surface, and a void; wherein the void comprises a bottom part near... Epistar Corporation

Semiconductor light source

A light source may comprise a thermally conductive frame comprising a base and a faceted portion extending from the base. The faceted portion may comprise a plurality of facets spaced circumferentially thereabout. Additionally, a hollow passageway may extend through the base and axially through the faceted portion. A plurality of... Epistar Corporation

11/30/17 / #20170345921

Power device and fabricating thereof

A power device having a patterned three-dimensional gate geometry is fabricated and described. The power device achieved increased effective gate width and increased channel conductivity per unit length. It includes at least a channel layer, a barrier layer, a dielectric layer, a gate disposed on the dielectric layer, dielectric layer... Epistar Corporation

11/30/17 / #20170345983

Light-emitting device and light-emitting apparatus comprising the same

The present application discloses a light-emitting device comprising a light-emitting unit and a flexible carrier supporting the light-emitting unit. The light-emitting unit comprises a LED chip, a first reflective layer on the LED chip and an optical diffusion layer formed between the first reflective layer and the LED chip.... Epistar Corporation

11/23/17 / #20170338278

Optoelectronic device

An optoelectronic device includes a first optoelectronic unit; a second optoelectronic unit; a third optoelectronic unit formed between the first optoelectronic unit and the second optoelectronic unit; a first electrode formed on and electrically connected to the first optoelectronic unit; a second electrode formed on and electrically connected to the... Epistar Corporation

11/16/17 / #20170330781

Apparatus for flipping semiconductor device

An apparatus for transferring a semiconductor device comprises platform comprising a carrier; a positioning unit above the platform and comprising an opening; and an elevating unit connecting the platform and the positioning unit; and a heater.... Epistar Corporation

11/16/17 / #20170330868

Light emitting device

The present invention relates to a light emitting device comprising a transparent substrate which light can pass through and at least one LED chip emitting light omni-directionally. Wherein the LED chip is disposed on one surface of the substrate and the light emitting angle of the LED chip is wider... Epistar Corporation

11/16/17 / #20170331001

Light-emitting device and manufacturing method thereof

A light-emitting device is provided. The light-emitting device comprises a substrate; an insulating layer on the substrate, wherein the insulating layer comprises a first hole; a light-emitting stack on the insulating layer and comprising an active region comprising a top surface, wherein the top surface comprises a first part and... Epistar Corporation

11/16/17 / #20170331003

Light-emitting element and the manufacturing method thereof

This disclosure discloses a light-emitting element having a light-emitting unit, a transparent layer and a wavelength conversion layer formed on the transparent layer. The transparent layer covers the light-emitting unit. The wavelength conversion layer includes a phosphor layer having a phosphor and a stress release layer without the phosphor... Epistar Corporation

11/16/17 / #20170331007

Light-emitting element

A light-emitting element includes a semiconductor light-emitting stack including a first semiconductor layer, an active layer, and a second semiconductor layer; a first conductive layer disposed on the second semiconductor layer and electrically connecting the second semiconductor layer; a second conductive layer disposed on the second semiconductor layer and electrically... Epistar Corporation

11/09/17 / #20170324009

Optoelectronic system

An embodiment of the invention discloses an optoelectronics system. The optoelectronic system includes an optoelectronic element having a top surface, a bottom surface, a plurality of lateral surfaces arranged between the top surface and the bottom surface, and a first electrode arranged on the bottom surface; a wavelength converting material... Epistar Corporation

11/09/17 / #20170325303

Semiconductor component and light emitting device using same

A semiconductor component including a Wheatstone bridge rectifying circuit and a transistor is provided, wherein the Wheatstone bridge rectifying circuit and the transistor are formed on a same growth substrate, and wherein the Wheatstone bridge rectifying circuit includes a first rectifying diode; a second rectifying diode electrically connected to the... Epistar Corporation

11/02/17 / #20170314127

Susceptor

A susceptor is provided. The susceptor comprises: a base part; multiple holders distributed on the base part for accommodating wafers; an inner ring connected to the base part; and an outer ring detachably connected to the base part and separated from the inner ring, wherein the outer ring comprises multiple... Epistar Corporation

11/02/17 / #20170317238

Light emitting device

The present disclosure provides a light-emitting device, comprising: a light-emitting stack; a first semiconductor layer on the light-emitting stack; a first electrode formed on the first semiconductor layer and comprising an inner segment, an outer segment, and a plurality of extending segments electrically connecting the inner segment with the outer... Epistar Corporation

11/02/17 / #20170317255

Light-emitting array

The present application discloses a light-emitting array, comprising a first light-emitting chip; a second light-emitting chip; and a conductive line electrically connected to the first light-emitting chip and the second light-emitting chip, wherein the conductive line includes a first segment and a second segment having a radius curvature different from... Epistar Corporation

10/26/17 / #20170309774

Semiconductor light emitting device and fabricating the same

A semiconductor light-emitting device comprises a substrate; a first adhesive layer on the substrate; multiple epitaxial units on the first adhesive layer; a second adhesive layer on the multiple epitaxial units; multiple first electrodes between the first adhesive layer and the multiple epitaxial units, and contacting the first adhesive layer... Epistar Corporation

10/26/17 / #20170309783

Substrate wafer and manufacturing a iii-nitride semiconductor device

A substrate wafer composed of a hexagonal single crystal material including a C crystalline plane, an A crystalline plane, and an M-axis direction includes a top surface is a C-axis plane; a first side connecting to the aforementioned top surface and being substantially a curve line viewing from the direction... Epistar Corporation

10/12/17 / #20170294301

Method of growing a high quality iii-v compound layer on a silicon substrate

The present disclosure involves a method of fabricating a semiconductor device. A surface of a silicon wafer is cleaned. A first buffer layer is then epitaxially grown on the silicon wafer. The first buffer layer contains an aluminum nitride (AlN) material. A second buffer layer is then epitaxially grown on... Epistar Corporation

10/12/17 / #20170294553

Manufacturing light-emitting device

A manufacturing method of light-emitting device is disclosed. The method includes providing an LED wafer comprising a substrate and a semiconductor stack formed on the substrate, wherein the semiconductor stack has a lower surface facing the substrate and an upper surface opposite to the lower surface; providing a first laser... Epistar Corporation

10/12/17 / #20170294558

Method of manufacturing a light emitting device

A method for fabricating a light emitting device, comprising: forming a plurality of light emitting stacked layers above a substrate; forming and patterning a current blocking (CB) layer on the light emitting stacked layers; forming a transparent conductive layer covering the light emitting stacked layers and the current blocking layer;... Epistar Corporation

10/12/17 / #20170294566

Light-emitting device

This disclosure discloses a light-emitting device includes a semiconductor stack, an electrode, an electrode post, a reflective insulating layer, an extending electrode, and a supporting structure. The electrode is disposed on a lower surface of the semiconductor stack, and electrically connected to the semiconductor stack. The electrode post is disposed... Epistar Corporation

10/05/17 / #20170284644

Illumination device

An illumination device includes a supporting base, and a light-emitting element inserted in the supporting base. The light-emitting element includes a substrate having a supporting surface and a side surface, a light-emitting chip disposed on the supporting surface, and a first wavelength conversion layer covering the light-emitting chip and only... Epistar Corporation

10/05/17 / #20170287888

Lighting apparatuses and led modules for both illumination and optical communication

An LED module has a controller with a modulator and illumination driver, and first and second LED chains. The first LED chain is connected to the modulator, has a first group of LED cells, and emits a first light under a pulse mode current input from the modulator. The first... Epistar Corporation

10/05/17 / #20170288095

Light-emitting device

A light-emitting device includes a light-emitting element, and a covering layer. The light-emitting element includes a top surface, a bottom surface, a light-emitting stack between the top surface and the bottom surface, and an adhesion enhancing layer surrounding the light-emitting stack. The covering layer covers the light-emitting element and contacts... Epistar Corporation

09/28/17 / #20170279004

Light-emitting device

A light-emitting device is provided. The light-emitting device comprises: an active structure, the active structure comprising alternate well layers and barrier layers, wherein each of the well layers comprises multiple different elements of group VA; a first semiconductor layer of first conductivity type and a second semiconductor layer of second... Epistar Corporation

09/28/17 / #20170279005

Semiconductor device and the manufacturing method thereof

The present disclosure discloses a method forming a semiconductor light-emitting unit, comprising the steps of providing a semiconductor substrate; epitaxially growing a reaction layer on the semiconductor substrate; and epitaxially growing a buffer layer on the reaction layer; wherein the buffer layer and the semiconductor substrate are lattice-mismatched, and a... Epistar Corporation

09/21/17 / #20170271290

Semiconductor device and a manufacturing thereof

A semiconductor device comprises a semiconductor die, comprising a stacking structure, a first bonding pad, and a second bonding pad on a top surface of the stacking structure, wherein a shortest distance between the first bonding pad and the second bonding pad is less than 150 μm; a carrier comprising... Epistar Corporation

09/21/17 / #20170271547

Light emitting device and fabricating the same

A compound semiconductor device comprises a substrate, comprising a top surface, a bottom surface, a side surface connecting the top surface and the bottom surface; and a semiconductor stack formed on the top surface, wherein the side surface comprises a first deteriorated surface, a second deteriorated surface, a first crack... Epistar Corporation

09/21/17 / #20170271548

Light-emitting device and manufacturing method thereof

The present disclosure provides a method for manufacturing a light-emitting device, comprising: providing a first substrate; providing a semiconductor stack on the first substrate, the semiconductor stack comprising a first conductive type semiconductor layer, a light-emitting layer on the first conductive type semiconductor layer, and a second conductive type semiconductor... Epistar Corporation

09/21/17 / #20170271568

Light-emitting device

A light-emitting device comprises a plurality of light-emitting pillars separated from each other by a space, wherein each of the plurality of light-emitting pillars comprises a first conductivity type layer, an active layer on the first conductivity type layer, and a second conductivity type layer on the active layer; a... Epistar Corporation

09/14/17 / #20170261160

Light emitting bulb

This disclosure discloses a light-emitting bulb. The light-emitting bulb includes a cover, an electrical associated with the cover, a board arranged between the cover and the electrical connector, and a first light-emitting device disposed on the board. The first light-emitting device includes a carrier having a first side and a... Epistar Corporation

09/14/17 / #20170263674

Light-emitting structure

A light-emitting structure, comprising: a first light-emitting structure unit and a second light-emitting structure unit, adjacent to and spaced apart from each other; and an electrical connection arranged on the first light-emitting structure unit and the second light-emitting structure unit, and electrically connecting the first light-emitting structure unit and the... Epistar Corporation

Patent Packs
09/14/17 / #20170263818

Light-emitting device

A light-emitting device, includes: a substrate; a light-emitting structure formed on the substrate and including a first portion, and a second portion where no optoelectronic conversion occurs therein; and a first electrode located on both the first portion and the second portion.... Epistar Corporation

09/14/17 / #20170263820

Light-emitting device

A light-emitting device is provided. The light-emitting device comprises: a light-emitting stack having an active layer emitting first light having a peak wavelength λ nm; and an adjusting element stacked electrically connected to the active layer in series for tuning a forward voltage of the light-emitting device; wherein the forward... Epistar Corporation

09/07/17 / #20170256678

Light-emitting element having a reflective structure with high efficiency

A light-emitting device comprises a light-emitting stack; a reflective structure comprising a reflective layer on the light-emitting stack and a first insulating layer covering the reflective layer; and a first conductive layer on the reflective structure; wherein the first insulating layer isolates the reflective layer from the first conductive layer.... Epistar Corporation

09/07/17 / #20170256681

Light-emitting element

A light-emitting element, comprises a light-emitting stack comprising an active layer; a window layer on the light-emitting stack, wherein the window layer has a surface opposite to the light-emitting stack; and an insulative layer on the surface, wherein the surface comprises a cavity and the insulative layer substantially conformally covering... Epistar Corporation

09/07/17 / #20170256683

Light-emitting device

A method of manufacturing a light-emitting device includes forming a first optical element on a first carrier, wherein the first optical element comprises an opening; forming a light-emitting element in the opening; forming a second carrier on the first optical element; removing the first carrier after forming the second carrier... Epistar Corporation

09/07/17 / #20170256914

Light-emitting device

A light-emitting device is provided. The light-emitting device is configured to emit a radiation and comprises: a substrate; an epitaxial structure on the substrate and comprising a first DBR stack, a light-emitting stack and a second DBR stack and a contact layer in sequence; an electrode; a current blocking layer... Epistar Corporation

08/31/17 / #20170250310

Light-emitting device

The present disclosure provides a light-emitting device. The light-emitting device comprises: a substrate; an intermediate layer on the substrate; a first window layer comprising a first semiconductor optical layer on the intermediate layer and a second semiconductor optical layer on the first semiconductor optical layer; and a light-emitting stack on... Epistar Corporation

08/31/17 / #20170250327

Light-emitting device

An embodiment of present disclosure discloses a light-emitting device which includes a light-emitting unit, a transparent covering structure, a first reflective structure, a second reflective structure, and a wavelength conversion structure. The light-emitting unit includes a light-emitting surface, a bottom surface opposite to the light-emitting surface, a side surface, a... Epistar Corporation

08/24/17 / #20170244005

A forming a virtual germanium substrate using a laser

The present disclosure provides a method of manufacturing a semiconductor device. Furthermore the present disclosure provides a photovoltaic device and a light emitting diode manufactured in accordance with the method. The method comprises the steps of forming a germanium layer using deposition techniques compatible with high-volume, low-cost manufacturing, such as... Epistar Corporation

08/17/17 / #20170236978

Light-emitting device and manufacturing method thereof

The present disclosure provides a light-emitting device and manufacturing method thereof. The light-emitting device comprises: a metal connecting structure; a barrier layer on the metal connecting structure, the barrier layer comprising a first metal multilayer on the metal connecting structure and a second metal multilayer on the first metal multilayer;... Epistar Corporation

08/17/17 / #20170236988

Lighting emitting device with aligned-bonding

A light-emitting device comprises a semiconductor light-emitting stack comprising a first connecting layer; and a substrate under the semiconductor light-emitting stack, wherein the substrate comprises a second connecting layer connecting the first connecting layer; wherein the first connecting layer comprises a first region, a first pattern, and a first connecting... Epistar Corporation

08/03/17 / #20170222102

Light-emitting device and manufacturing method thereof

A light-emitting device includes a light-emitting element, a wavelength conversion layer and a light pervious element. The light-emitting element includes a top surface, a bottom surface, a plurality of side surfaces connecting to the top surface and the bottom surface, and a first electrical contact formed on the bottom surface.... Epistar Corporation

07/20/17 / #20170207368

Light-emitting device

A light-emitting device comprises a light-emitting semiconductor stack comprising a plurality of recesses and a mesa, each of the plurality of recesses comprising a bottom surface, and the mesa comprising an upper surface; a first electrode formed on the upper surface of the mesa; a plurality of second electrodes respectively... Epistar Corporation

07/13/17 / #20170200764

Semiconductor optoelectronic device with an insulative protection layer and the manufacturing method thereof

The present disclosure is to provide an optoelectronic device. The optoelectronic device comprises a heat dispersion substrate; a first connecting layer on the heat dispersion substrate; a diode stack structure comprising a protection layer and a second connecting layer on the protection layer, wherein the protection layer is on the... Epistar Corporation

07/13/17 / #20170200866

Light-emitting device and manufacturing method thereof

A manufacturing method of a light-emitting device is disclosed. The method includes: providing a semiconductor wafer, including a substrate having a first surface and a second surface opposite to the first surface; and a semiconductor stack on the first surface; removing a portion of the semiconductor stack to form an... Epistar Corporation

Patent Packs
07/06/17 / #20170194531

Light emitting device

A light emitting device, includes a substrate; a plurality of light emitting stacked layers, comprising a first surface and a second surface; a mesa structure; a current blocking (CB) layer; a transparent conductive layer; a first pad electrode and a second pad electrode; and a passivation layer, wherein the second... Epistar Corporation

07/06/17 / #20170194532

Optoelectronic device and the manufacturing method thereof

The present disclosure provides an optoelectronic device comprising a semiconductor stack comprising a first side having a first length; a first contact layer on the semiconductor stack; and a second contact layer on the semiconductor stack opposite to the first contact layer, wherein the second contact layer is not overlapped... Epistar Corporation

07/06/17 / #20170194540

Light-emitting device

A light-emitting device includes a light-emitting structure with a side surface, and a reflective layer covering the side surface. The light-emitting structure has a first light-emitting angle and a second light-emitting angle. The difference between the first light-emitting angle and the second light-emitting angle is larger than 15°.... Epistar Corporation

06/29/17 / #20170186929

Light-emitting device

A light-emitting device is provided. The light-emitting device comprises: a semiconductor system comprising a light-emitting semiconductor stack; an electrode comprising a surface next to the semiconductor system; a contact material in the semiconductor system and in the electrode, wherein the contact material has a largest intensity at a first depth... Epistar Corporation

06/22/17 / #20170179086

Light-emitting device

A light-emitting device configured to electrically connect to an external circuit and having: a first light-emitting structure; a second light-emitting structure; a first conductive structure having a first connecting pad having a side surface and a top surface connected to the first light-emitting structure and an exposed bottom surface, and... Epistar Corporation

06/22/17 / #20170179341

Light-emitting device and manufacturing method thereof

A manufacturing method of a light-emitting device comprising a first light semiconductor stack and a second semiconductor stack on thereof comprises steps of: providing a substrate with a top surface; forming a semiconductor stack on the substrate; forming a trench in the semiconductor stack to define multiple second semiconductor stacks... Epistar Corporation

06/22/17 / #20170179343

Light-emitting device

A light-emitting device comprises a semiconductor stack; a pad electrode comprising a periphery disposed on the semiconductor stack; and a finger electrode connected to the pad electrode, wherein the finger electrode comprises a first portion extended from the periphery of the pad electrode and a second portion away from the... Epistar Corporation

06/15/17 / #20170170375

Light-emitting device and manufacturing thereof

The present disclosure provides a method of manufacturing a light-emitting device, which comprises providing a first substrate and a plurality of semiconductor stacked blocks on the first substrate, and each of the plurality semiconductor stacked blocks comprises a first conductive-type semiconductor layer, a light-emitting layer on the first conductive-type semiconductor... Epistar Corporation

06/08/17 / #20170162751

Optoelectronic device and manufacturing the same

An optoelectronic device includes a semiconductor stack, including a first semiconductor layer, an active layer formed on the first semiconductor layer, and a second semiconductor layer; a first metal layer formed on a top surface of the second semiconductor layer; a second metal layer formed on a top surface of... Epistar Corporation

06/08/17 / #20170162763

Light-emitting device

A light-emitting device includes a light-emitting element, a cover layer, and an anti-adhesion layer. The light-emitting element has a top surface, a bottom surface and a first side surface. The cover layer covers the light-emitting element and includes a first transparent binder and a plurality of wavelength conversion particles dispersed... Epistar Corporation

06/08/17 / #20170162768

Light-emitting device

This disclosure discloses a light-emitting device includes a semiconductor light-emitting element having a first electrode and a second electrode, a transparent layer covering the semiconductor light-emitting element, a stretchable electrical connection structure and an electrical contact portion. The stretchable electrical connection structure is formed in the transparent layer and electrically... Epistar Corporation

06/01/17 / #20170154987

Normally-off high electron mobility transistors and fabrication methods thereof

Disclosure includes a normally-off field-effect semiconductor device and the fabrication method thereof. An antigrowth portion is formed on a template. A first semiconductor layer and a second semiconductor layer on the template form two heterojunctions for creating two-dimensional electron gas regions, while a heterojunction-free area defined by the antigrowth portion... Epistar Corporation

06/01/17 / #20170155015

Light-emitting device having a patterned surface

A light-emitting device comprises a substrate having a top surface and a plurality of patterned units protruding from the top surface; and a light-emitting stack formed on the substrate and having an active layer with a first surface substantially parallel to the top surface, wherein one of the plurality of... Epistar Corporation

05/25/17 / #20170146200

Led light source

A light source includes a socket connection, a base connected to the socket connection, an LED unit, a mount and a heat conductive material. The socket connection is capable of connecting to a source of electricity. The mount is disposed into the base, and has a top surface on which... Epistar Corporation

05/18/17 / #20170141260

Light-emitting device

A light-emitting device comprises a semiconductor stack comprising a first semiconductor layer, a second semiconductor layer, and an active layer formed between the first semiconductor layer and the second semiconductor layer; a first pad on the semiconductor stack; a second pad on the semiconductor stack, wherein the first pad and... Epistar Corporation

05/11/17 / #20170133556

Light emitting device

The present disclosure provides a light-emitting device, comprising: a light-emitting stack comprising an active layer, wherein the active layer is configured to emit light; a first semiconductor layer on the light-emitting stack; a first electrode formed on the first semiconductor layer and comprising an inner segment, an outer segment, and... Epistar Corporation

05/04/17 / #20170125573

Semiconductor power device

A semiconductor power device includes a substrate, an active region having a recess and disposed on the substrate, a first conductivity type semiconductor layer disposed on the recess and devoid of overlapping with the recess, a gate electrode disposed on the active region wherein a portion of the gate electrode... Epistar Corporation

04/27/17 / #20170117321

Light-emitting structure

A light-emitting structure includes a first epitaxial unit; a second epitaxial unit disposed next to the first epitaxial unit; a crossover metal layer including a first protruding portion laterally overlapping the first epitaxial unit and the second epitaxial unit wherein the first protruding portion is electrically connected with the first... Epistar Corporation

04/27/17 / #20170117376

Heterostructure device

A heterostructure device includes a channel layer, a barrier layer disposed on the channel layer, and a first electrode and a second electrode disposed on the barrier layer, respectively. The second electrode includes a p-type semiconductor structure and a raised section disposed on the p-type semiconductor structure, the second electrode... Epistar Corporation

04/27/17 / #20170117450

Light-emitting device

A light-emitting device comprising: a supportive substrate; a transparent layer formed on the supportive substrate, and the transparent layer comprising conductive metal oxide material; a light-emitting stacked layer comprising an active layer formed on the transparent layer; and an etching-stop layer formed between the light-emitting stacked layer and the supportive... Epistar Corporation

04/13/17 / #20170104134

Light emitting diode

The present invention relates to a light-emitting diode (LED), which comprises electrodes having a single metal reflective layer. The single metal reflective layer is thicker than the active layer of the LED. Thereby, at least a portion of light emitted from the active layer is reflected by the single metal... Epistar Corporation








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