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Epowersoft Inc patents

Recent patent applications related to Epowersoft Inc. Epowersoft Inc is listed as an Agent/Assignee. Note: Epowersoft Inc may have other listings under different names/spellings. We're not affiliated with Epowersoft Inc, we're just tracking patents.

ARCHIVE: New 2016 2015 2014 2013 2012 2011 2010 2009 | Company Directory "E" | Epowersoft Inc-related inventors




Date Epowersoft Inc patents (updated weekly) - BOOKMARK this page
06/27/13Method and system for junction termination in gan materials using conductivity modulation
06/27/13Method and system for fabricating edge termination structures in gan materials
06/27/13Method and system for a gan self-aligned vertical mesfet
06/27/13Method and system for a gan vertical jfet with self-aligned source and gate
06/27/13Method of fabricating a gan p-i-n diode using implantation
06/27/13Fabrication of floating guard rings using selective regrowth
06/20/13Ingan ohmic source contacts for vertical power devices
06/13/13Vertical gan-based metal insulator semiconductor fet
06/13/13Vertical gan jfet with gate source electrodes on regrown gate
06/06/13In-situ sin growth to enable schottky contact for gan devices
05/30/13Method and system for carbon doping control in gallium nitride based devices
05/23/13Aluminum gallium nitride etch stop layer for gallium nitride bases devices
05/23/13Method and system for fabricating floating guard rings in gan materials
05/23/13Gan-based schottky barrier diode with algan surface layer
05/23/13Edge termination by ion implantation in gan
05/23/13Gan-based schottky barrier diode with field plate
05/09/13Monolithically integrated vertical jfet and schottky diode
04/11/13Monolithically integrated hemt and schottky diode
04/11/13Method and system for floating guard rings in gan materials
04/11/13Method of fabricating a gan merged p-i-n schottky (mps) diode
04/11/13Schottky diode with buried layer in gan materials
03/28/13Method and system for diffusion and implantation in gallium nitride based devices
03/07/13Method and system for local control of defect density in gallium nitride based electronics
02/07/13Method and system for a gan vertical jfet utilizing a regrown gate
02/07/13Method and system for a gan vertical jfet utilizing a regrown channel
02/07/13Method and system for doping control in gallium nitride based devices
02/07/13Method and system for formation of p-n junctions in gallium nitride based electronics
01/17/13Electrical isolation of high defect density regions in a semiconductor device
12/06/12Epitaxial lift-off and wafer reuse
10/04/12Controlled doping in iii-v materials







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