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Floadia Corporation patents


Recent patent applications related to Floadia Corporation. Floadia Corporation is listed as an Agent/Assignee. Note: Floadia Corporation may have other listings under different names/spellings. We're not affiliated with Floadia Corporation, we're just tracking patents.

ARCHIVE: New 2018 2017 2016 2015 2014 2013 2012 2011 2010 2009 | Company Directory "F" | Floadia Corporation-related inventors


Non-volatile sram memory cell and non-volatile semiconductor storage device

A non-volatile sram memory cell and a non-volatile semiconductor memory device capable of programming sram data in a sram to a non-volatile memory unit through fast operation of the sram are disclosed. A non-volatile semiconductor memory device can achieve reduction in a voltage necessary for a programming operation to program sram data to the non-volatile memory unit. ... Floadia Corporation

Semiconductor memory device

In a semiconductor memory device, voltage application from a memory gate electrode of the memory capacitor to a word line can be blocked by a rectifier element depending on values of voltages applied to the memory gate electrode and the word line without using a conventional control circuit. The configuration eliminates the need to provide a switch transistor and a switch control circuit for turning on and off the switch transistor as in conventional cases, and accordingly achieves downsizing. ... Floadia Corporation

Nonvolatile semiconductor storage device

A non-volatile semiconductor memory device in which, while voltage from a first control line is applied, as a memory gate voltage, to a sub control line through a switching transistor, another switching transistor can block voltage application to a corresponding sub control line. Thus, while a plurality of memory cells are arranged in one direction along the first control line, the number of memory cells to which a memory gate voltage is applied can reduced by the switching transistor, which reduces the occurrence of disturbance, accordingly. ... Floadia Corporation

Anti-fuse memory and semiconductor storage device

In an anti-fuse memory includes a rectifier element of a semiconductor junction structure in which a voltage applied from a memory gate electrode to a word line is applied as a reverse bias in accordance with voltage values of the memory gate electrode and the word line, and does not use a conventional control circuit. Hence, the rectifier element blocks application of a voltage from the memory gate electrode to the word line. ... Floadia Corporation

Memory cell and non-volatile semiconductor storage device

A voltage applied to a bit line or to a source line is reduced to a value allowing a first or second select gate structure to block electrical connection between the bit line and a channel layer or between the source line and the channel layer, irrespective of a voltage needed to inject charge into a charge storage layer by a quantum tunneling effect. In accordance with the reduction in voltage(s) applied to the bit line and the source line, thickness of each of a first and second select gate insulating films of the first and second select gate structure is reduced. ... Floadia Corporation

Non-volatile sram memory cell, and non-volatile semiconductor storage device

A first switch transistor and a second switch transistor are turned on concurrently. Thereby a first reram is electrically connected to a first storage node, and a second reram is electrically connected to a second storage node. ... Floadia Corporation

Non-volatile semiconductor memory device

In the non-volatile semiconductor memory device, a mobile charge collector layer, a mobile charge collecting contact, a mobile charge collecting first wiring layer, an in-between contact between the mobile charge collector layers, and a mobile charge collecting second wiring layer are disposed adjacent to a floating gate. Thereby, without increasing areas of active regions in the non-volatile semiconductor memory device, the number of mobile charges collected near the floating gate is reduced. ... Floadia Corporation

Non-volatile semiconductor storage device

In a memory unit, voltages required for operations of a capacity transistor in a first well and a writing transistor in a second well are separately applied to a first deep well and a second deep well, without the voltages on the first deep well and the second deep well being restricted by each other. Thus, in the memory unit, each of a voltage difference between the first deep well and the first well and a voltage difference between the second deep well and the second well is made smaller than a voltage difference (18 [v]), at which a tunneling effect occurs, and accordingly a junction voltage between the first deep well and the first well and a junction voltage between the second deep well and the second well are low.. ... Floadia Corporation








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