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Floadia Corporation
Floadia Corporation A Japanese Corporation

Floadia Corporation patents

Recent patent applications related to Floadia Corporation. Floadia Corporation is listed as an Agent/Assignee. Note: Floadia Corporation may have other listings under different names/spellings. We're not affiliated with Floadia Corporation, we're just tracking patents.

ARCHIVE: New 2018 2017 2016 2015 2014 2013 2012 2011 2010 2009 | Company Directory "F" | Floadia Corporation-related inventors

Semiconductor memory device

In a semiconductor memory device, voltage application from a memory gate electrode of the memory capacitor to a word line can be blocked by a rectifier element depending on values of voltages applied to the memory gate electrode and the word line without using a conventional control circuit. The configuration... Floadia Corporation

Nonvolatile semiconductor storage device

A non-volatile semiconductor memory device in which, while voltage from a first control line is applied, as a memory gate voltage, to a sub control line through a switching transistor, another switching transistor can block voltage application to a corresponding sub control line. Thus, while a plurality of memory cells... Floadia Corporation

Anti-fuse memory and semiconductor storage device

In an anti-fuse memory includes a rectifier element of a semiconductor junction structure in which a voltage applied from a memory gate electrode to a word line is applied as a reverse bias in accordance with voltage values of the memory gate electrode and the word line, and does not... Floadia Corporation

Non-volatile sram memory cell, and non-volatile semiconductor storage device

A first switch transistor and a second switch transistor are turned on concurrently. Thereby a first ReRAM is electrically connected to a first storage node, and a second ReRAM is electrically connected to a second storage node. Complementary SRAM data stored in an SRAM is programmed into a non-volatile memory... Floadia Corporation

Memory cell and non-volatile semiconductor storage device

A voltage applied to a bit line or to a source line is reduced to a value allowing a first or second select gate structure to block electrical connection between the bit line and a channel layer or between the source line and the channel layer, irrespective of a voltage... Floadia Corporation

Non-volatile semiconductor memory device

In the non-volatile semiconductor memory device, a mobile charge collector layer, a mobile charge collecting contact, a mobile charge collecting first wiring layer, an in-between contact between the mobile charge collector layers, and a mobile charge collecting second wiring layer are disposed adjacent to a floating gate. Thereby, without increasing... Floadia Corporation

Non-volatile semiconductor storage device

In a memory unit, voltages required for operations of a capacity transistor in a first well and a writing transistor in a second well are separately applied to a first deep well and a second deep well, without the voltages on the first deep well and the second deep well... Floadia Corporation

ARCHIVE: New 2018 2017 2016 2015 2014 2013 2012 2011 2010 2009


This listing is an abstract for educational and research purposes is only meant as a recent sample of applications filed, not a comprehensive history. is not affiliated or associated with Floadia Corporation in any way and there may be associated servicemarks. This data is also published to the public by the USPTO and available for free on their website. Note that there may be alternative spellings for Floadia Corporation with additional patents listed. Browse our Agent directory for other possible listings. Page by