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Force Mos Technology Co Ltd
Force Mos Technology Co Ltd_20131212
  

Force Mos Technology Co Ltd patents

Recent patent applications related to Force Mos Technology Co Ltd. Force Mos Technology Co Ltd is listed as an Agent/Assignee. Note: Force Mos Technology Co Ltd may have other listings under different names/spellings. We're not affiliated with Force Mos Technology Co Ltd, we're just tracking patents.

ARCHIVE: New 2017 2016 2015 2014 2013 2012 2011 2010 2009 | Company Directory "F" | Force Mos Technology Co Ltd-related inventors




Date Force Mos Technology Co Ltd patents (updated weekly) - BOOKMARK this page
11/02/17Trench mosfet structure and layout with separated shielded gate
09/28/17Semiconductor power device having shielded gate structure and esd clamp diode manufactured with less mask process
04/14/16Super-junction trench mosfet integrated with embedded trench schottky rectifier
11/05/15Super-junction structures having implanted regions surrounding an n epitaxial layer in deep trench
08/06/15Trench mosfet with self-aligned source and contact regions using three masks process
03/19/15Super-junction structures having implanted regions surrounding an n epitaxial layer in deep trench
02/05/15Super-junction trench mosfets with short terminations
11/27/14Super-junction trench mosfets with short terminations
10/02/14Trench mosfet structure having self-aligned features for mask saving and on-resistance reduction
06/12/14Short channel trench mosfets
05/01/14Trench mosfet having a top side drain
02/20/14Avalanche capability improvement in power semiconductor devices using three masks process
12/12/13Trench mosfet with trenched floating gates having thick trench bottom oxide as termination
11/21/13Trench mosfet with trenched floating gates having thick trench bottom oxide as termination
11/14/13Trench mosfet structures using three masks process
09/12/13Semiconductor power device integrated with clamp diodes having dopant out-diffusion suppression layers
09/12/13Semiconductor power device integrated with esd protection diodes
08/22/13Integrated trench mosfet with trench schottky rectifier
08/15/13Trench mosfet having a top side drain
07/04/13Trench mosfet with resurf stepped oxide and diffused drift region
07/04/13Semiconductor power device having wide termination trench and self-aligned source regions for mask saving
04/18/13Methods of fabricating optoelectronic devices using semiconductor-particle monolayers and devices made thereby
03/28/13Semiconductor power device with embedded diodes and resistors using reduced mask processes
03/28/13Semiconductor power devices integrated with a trenched clamp diode
01/24/13Shielded gate mosfet-schottky rectifier-diode integrated circuits with trenched contact structures
01/24/13Mosfet-schottky rectifier-diode integrated circuits with trench contact structures
12/13/12Fast switching hybrid igbt device with trenched contacts
12/06/12Power semiconductor device comprising a plurality of trench igbts
12/06/12Method for manufacturing a power semiconductor device
11/22/12High switching trench mosfet
10/18/12Trench mosfet with trenched floating gates and trenched channel stop gates in termination
08/30/12Igbt with integrated mosfet and fast switching diode
08/23/12Trench mosfet with trenched floating gates in termination
08/02/12Trench mosfet with ultra high cell density and manufacture thereof
07/12/12Trench mosfet with super pinch-off regions and self-aligned trenched contact
07/12/12Trench mos rectifier
07/12/12Semiconductor devices with gate-source esd diode and gate-drain clamp diode
06/28/12Fast switching lateral insulated gate bipolar transistor (ligbt) with trenched contacts
04/05/12Trench mosfet with super pinch-off regions
03/29/12Super-junction trench mosfet with resurf stepped oxides and trenched contacts
03/15/12Super-junction trench mosfet with resurf stepped oxides and split gate electrodes
03/15/12Method for manufacturing a super-junction trench mosfet with resurf stepped oxides and trenched contacts
02/09/12Trench mosfet having floating dummy cells for avalanche improvement
01/26/12Method of manufacturing trench mosfet structures using three masks process
12/29/11Trench mosfet with trenched floating gates having thick trench bottom oxide as termination
11/24/11Low qgd trench mosfet integrated with schottky rectifier
11/03/11Semiconductor devices with gate-source esd diode and gate-drain clamp diode
10/20/11Trench mosfet with trenched floating gates in termination
10/20/11Shielded trench mosfet with multiple trenched floating gates as termination
10/20/11Shielded trench mosfet with multiple trenched floating gates as termination
10/13/11Trench mosfet with body region having concave-arc shape
09/29/11Semiconductor power device layout for stress reduction
09/29/11Avalanche capability improvement in power semiconductor devices
07/28/11Power semiconductor devices integrated with clamp diodes having separated gate metal pads to avoid breakdown voltage degradation
07/14/11Trench mosfet with ultra high cell density and manufacture thereof
07/14/11Power semiconductor devices integrated with clamp diodes having separated gate metal pads to avoid breakdown voltage degradation
07/07/11Ldmos with double ldd and trenched drain
06/30/11Super-junction trench mosfet with resurf step oxide and the method to make the same
05/26/11Trench mosfet with trenched floating gates as termination
05/12/11Ldmos with double ldd and trenched drain
04/07/11Trench mosfet with high cell density
03/24/11Trench mosfet with high cell density
03/24/11Method for making trench mosfet with shallow trench structures
01/13/11Trench mosfet with on-resistance reduction
01/13/11Trench mosfet structures using three masks process
Patent Packs
01/13/11Method of making a trench mosfet having improved avalanche capability using three masks process
12/16/10Power semiconductor devices integrated with clamp diodes sharing same gate metal pad
11/18/10Power semiconductor devices integrated with clamp diodes having separated gate metal pads to avoid breakdown voltage degradation
11/18/10Trench mosfets with esd zener diode
11/04/10Avalanche capability improvement in power semiconductor devices having dummy cells around edge of active area
11/04/10Trench mosfet having trench contacts integrated with trench schottky rectifiers having planar contacts
10/21/10Low qgd trench mosfet integrated with schottky rectifier
09/23/10Ldmos with double ldd and trenched drain
09/23/10Msd integrated circuits with shallow trench
09/09/10Trench moseft with trench gates underneath contact areas of esd diode for prevention of gate and source shortage
08/12/10Mosfets with terrace irench gate and improved source-body contact
07/15/10Mosfet with source contact in trench and integrated schottky diode
07/15/10Intergrated trench mosfet with trench schottky rectifier
07/15/10Metal schemes of trench mosfet for copper bonding
07/08/10Trench mosfet with improved source-body contact
Patent Packs
05/27/10Trench mosfet with trench source contact having copper wire bonding
05/27/10Trench mosfet with terrace gate and self-aligned source trench contact
05/20/10Msd integrated circuits with trench contact structures for device shrinkage and performance improvement
04/15/10Trench mosfet with short channel formed by pn double epitaxial layers
04/15/10Trench mosfet with shallow trench contact
03/25/10Trench mosfet with etching buffer layer in trench gate
12/24/09Trench mosfet with shallow trench for gate charge reduction
12/24/09Trench mosfet with shallow trench structures
12/24/09Integrated trench mosfet and schottky rectifier with trench contact structure
12/24/09Integrated trench mosfet and junction barrier schottky rectifier with trench contact structures
12/17/09Testing device on water for monitoring vertical mosfet on-resistance
12/17/09Method of fabricating collector of igbt
12/17/09Trench schottky with multiple epi structure
08/27/09Trench moseft with trench gates underneath contact areas of esd diode for prevention of gate and source shortate
08/27/09Trench igbt with trench gates underneath contact areas of protection diodes
08/27/09Trenched mosfet with trenched source contact
12/12/13Trench mosfet with trenched floating gates having thick trench bottom oxide as termination







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This listing is an abstract for educational and research purposes is only meant as a recent sample of applications filed, not a comprehensive history. Freshpatents.com is not affiliated or associated with Force Mos Technology Co Ltd in any way and there may be associated servicemarks. This data is also published to the public by the USPTO and available for free on their website. Note that there may be alternative spellings for Force Mos Technology Co Ltd with additional patents listed. Browse our Agent directory for other possible listings. Page by FreshPatents.com

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