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Glo Ab patents


Recent patent applications related to Glo Ab. Glo Ab is listed as an Agent/Assignee. Note: Glo Ab may have other listings under different names/spellings. We're not affiliated with Glo Ab, we're just tracking patents.

ARCHIVE: New 2018 2017 2016 2015 2014 2013 2012 2011 2010 2009 | Company Directory "G" | Glo Ab-related inventors


Monolithic image chip for near-to-eye display

A set of light emitting devices can be formed on a substrate A growth mask having a first aperture in a first area and a second aperture in a second area is formed on a substrate. A first nanowire and a second nanowire are formed in the first and second... Glo Ab

Molded led package with laminated leadframe and making thereof

A method of packaging light emitting diodes (LEDs) includes molding a lead frame containing a plurality of lead frame fingers that are parallel to each other such that the lead frame fingers are separated from each other by a molded insulating structure to form a molded lead frame, mounting light... Glo Ab

Light emitting diode array on a backplane and making thereof

A backplane optionally having stepped horizontal surfaces and optionally embedding metal interconnect structures is provided. First conductive bonding structures are formed on first stepped horizontal surfaces. First light emitting devices on a first transfer substrate are disposed on the first conductive bonding structures, and a first subset of the first... Glo Ab

Narrow angle light engine

A light engine includes a housing containing a rectangular aperture, a polarizer disposed in the housing facing the aperture, a light emitting diode (LED) array disposed in the housing, and a light guide configured to guide light emitted from the LED array toward the aperture, such that light is emitted... Glo Ab

Iii-nitride nanowire led with strain modified surface active region and making thereof

A light emitting diode (LED) device includes a semiconductor nanowire core, and an In(Al)GaN active region quantum well shell located radially around the semiconductor nanowire core. The active quantum well shell contains indium rich regions having at least 5 atomic percent higher indium content than indium poor regions in the... Glo Ab

Selective die repair on a light emitting device assembly

A method of repairing a light emitting device assembly includes providing a light emitting device assembly including a backplane and light emitting devices, where a predominant subset of pixels in the light emitting device assembly includes an empty site for accommodating a repair light emitting device, generating a test map... Glo Ab

Monolithic multicolor direct view display containing different color leds and making thereof

A direct view multicolor light emitting device includes blue, green and red light emitting diodes (LEDs) in each pixel. The different light emitting diodes can be formed by depositing different types of active region layers in a stack such that deposition area of each subsequent active region is less than... Glo Ab

Small pitch direct view display and making thereof

A direct view display device includes a printed circuit board, an array of pixels located on a first side of the printed circuit board, each pixel including a plurality of light emitting diodes, and an isolation grid comprising a light absorbing material located between the pixels in the array of... Glo Ab

Method of forming an array of a multi-device unit cell

Backplane-side bonding structures including a common metal are formed on a backplane. Multiple source coupons are provided such that each source coupon includes a transfer substrate and an array of devices to be transferred. Each array of devices are arranged such that each array includes a unit cell structure including... Glo Ab

Nanowire sized opto-electronic structure and modifying selected portions of same

A LED structure includes a support and a plurality of nanowires located on the support, where each nanowire includes a tip and a sidewall. A method of making the LED structure includes reducing or eliminating the conductivity of the tips of the nanowires compared to the conductivity of the sidewalls... Glo Ab

Multicolor led and fabricating thereof

A device includes a support including at least a first area and a second area, and a plurality of first light emitting devices located over the first area of the support, each first light emitting device containing a first growth template including a first nanostructure, and each first light emitting... Glo Ab

Through backplane laser irradiation for die transfer

Light emitting devices can be disposed on the front side of a transparent backplane. A laser beam can be irradiated through the transparent backplane and onto a component located on the front side of the transparent backplane. In one embodiment, the component may be a solder material portion that is... Glo Ab

Nanostructured led

The device according to the invention comprises a nanostructured LED with a first group of nanowires protruding from a first area of a substrate and a contacting means in a second area of the substrate. Each nanowire of the first group of nanowires comprises a p-i-n-junction and a top portion... Glo Ab

Integrated back light unit including non-uniform light guide unit

An integrated back light unit can include a light guide plate having a non-uniform distribution of extraction features. The non-uniform distribution of the extraction features can be provided by an extraction-feature-free region in proximity to a light emitting device, and/or by a variable density of the extraction features that changes... Glo Ab

Method of selectively transferring led die to a backplane using height controlled bonding structures

Selective transfer of dies including semiconductor devices to a target substrate can be performed employing local laser irradiation. Coining of at least one set of solder material portions can be employed to provide a planar surface-to-surface contact and to facilitate bonding of adjoining pairs of bond structures. Laser irradiation on... Glo Ab

Iii-nitride nanowire led with strain modified surface active region and making thereof

A core-shell nanowire device includes an eave region having a structural discontinuity from the p-plane in the upper tip portion of the shell to the m-plane in the lower portion of the shell. The eave region has at least 5 atomic percent higher indium content than the p-plane and m-plane... Glo Ab

Led backlight unit with separately and independently dimmable zones for a liquid crystal display

A liquid crystal display module includes a plurality of liquid crystal pixels and a backlight unit containing white-light-emitting LEDs located in individually dimmable zones. Selectively brightening or dimming one or more individually dimmable zones to directly illuminate one or more pixels with brighter or dimmer white light.... Glo Ab

Pixilated display device based upon nanowire leds and making the same

A pixelated display device and a method for making the same are disclosed. The device may include an array of nanowire LEDs located above a substrate. When the nanowire LEDs are initially grown, they may emit first-wavelength light proximally to the substrate and second-wavelength light distally from the substrate. The... Glo Ab

Coalesced nanowire structures with interstitial voids and manufacturing the same

A semiconductor device, such as an LED, includes a plurality of first conductivity type semiconductor nanowire cores located over a support, a continuous second conductivity type semiconductor layer extending over and around the cores, a plurality of interstitial voids located in the second conductivity type semiconductor layer and extending between... Glo Ab

Monolithic image chip for near-to-eye display

A set of light emitting devices can be formed on a substrate. A growth mask having a first aperture in a first area and a second aperture in a second area is formed on a substrate. A first nanowire and a second nanowire are formed in the first and second... Glo Ab

Laser lift-off on isolated iii-nitride light islands for inter-substrate led transfer

A laser liftoff process is provided. A device layer can be provided on a transfer substrate. Channels can be formed through the device layer such that devices comprising remaining portions of the device layer are laterally isolated from one another by the channels. The transfer substrate can be bonded to... Glo Ab

Integrated back light unit with remote phosphor

An integrated back light unit includes a light emitting device assembly including a plurality of light emitting devices located in a reflective mixing chamber containing reflective walls, a phosphor material which is located remotely from the LEDs and converts the light from the light emitting devices into phosphor converted light,... Glo Ab

Integrated back light unit

An integrated back light unit includes a light emitting device assembly which contains an optically transparent encapsulant portion which encapsulates at least one light emitting device, and a light guide unit optically coupled to the at least one light emitting device to receive light from the at least one light... Glo Ab

Light bar for back light unit containing resistance modulated led strings

A light bar includes a plurality of first color light emitting LEDs including a first subset of first color light emitting LEDs and a second subset of first color light emitting LEDs, a plurality of second color light emitting LEDs, where the second color is different from the first color,... Glo Ab








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This listing is an abstract for educational and research purposes is only meant as a recent sample of applications filed, not a comprehensive history. Freshpatents.com is not affiliated or associated with Glo Ab in any way and there may be associated servicemarks. This data is also published to the public by the USPTO and available for free on their website. Note that there may be alternative spellings for Glo Ab with additional patents listed. Browse our Agent directory for other possible listings. Page by FreshPatents.com

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