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Global Foundries Inc patents

Recent patent applications related to Global Foundries Inc. Global Foundries Inc is listed as an Agent/Assignee. Note: Global Foundries Inc may have other listings under different names/spellings. We're not affiliated with Global Foundries Inc, we're just tracking patents.

ARCHIVE: New 2018 2017 2016 2015 2014 2013 2012 2011 2010 2009 | Company Directory "G" | Global Foundries Inc-related inventors

Three-dimensional hybrid packaging with through-silicon-vias and tape-automated-bonding

A 3-dimensional hybrid package including an integrated circuit chip stack formed on a laminate, the integrated chip stack further including a first chip and a second chip. The first chip is connected to the laminate through first solder bumps, each associated with a first through-silicon via (TSV), and first metal... Global Foundries Inc

Controlling right-of-way for priority vehicles

Various embodiments include approaches for analyzing a set of travel pathways for a priority vehicle. In some cases, an approach includes: obtaining data indicating a location of the priority vehicle and a location of a destination for the priority vehicle; ranking each of a set of paths between the location... Global Foundries Inc

Preventing leakage inside air-gap spacer during contact formation

Techniques for preventing leakage of contact material into air-gap spacers during contact formation. For example, a method comprises forming a contact trench on a semiconductor structure over an air-gap spacer and depositing a liner in the contact trench. The liner deposition material fills a portion of the air-gap spacer pinching... Global Foundries Inc

Patterning scheme to minimize dry/wets strip induced device degradation

A patterning scheme to minimize dry/wet strip induced device degradation and resultant devices are provided. The method includes removing a workfunction material over a first device area of a structure, while protecting the workfunction material over a second device area of the structure with a first masking material. The method... Global Foundries Inc

Finfet pcm access transistor having gate-wrapped source and drain regions

Embodiments are directed to a method of forming portions of a fin-type field effect transistor (FinFET) device. The method includes forming at least one source region having multiple sides, forming at least one drain region having multiple sides, forming at least one channel region having multiple sides, forming at least... Global Foundries Inc

ARCHIVE: New 2018 2017 2016 2015 2014 2013 2012 2011 2010 2009


This listing is an abstract for educational and research purposes is only meant as a recent sample of applications filed, not a comprehensive history. is not affiliated or associated with Global Foundries Inc in any way and there may be associated servicemarks. This data is also published to the public by the USPTO and available for free on their website. Note that there may be alternative spellings for Global Foundries Inc with additional patents listed. Browse our Agent directory for other possible listings. Page by