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Recent patent applications related to Globalfoundries Inc. Globalfoundries Inc is listed as an Agent/Assignee. Note: Globalfoundries Inc may have other listings under different names/spellings. We're not affiliated with Globalfoundries Inc, we're just tracking patents.

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09/22/16 new patent  Mis (metal-insulator-semiconductor) contact structures for semiconductor devices
09/22/16 new patent  Transistors patterned with electrostatic discharge protection and methods of fabrication
09/22/16 new patent  Eliminating field oxide loss prior to finfet source/drain epitaxial growth
09/22/16 new patent  Merged n/p type transistor
09/22/16 new patent  High-voltage transistor device
09/22/16 new patent  Vertical fin field-effect semiconductor device
09/22/16 new patent  Silicided nanowires for nanobridge weak links
09/22/16 new patent  Finfet including tunable fin height and tunable fin width ratio
09/15/16Leakage testing of integrated circuits
09/15/16Low defect iii-v semiconductor template on porous silicon
09/15/16Overhead substrate handling and storage system
09/15/16Cap layer for spacer-constrained epitaxially grown material on fins of a finfet device
09/15/16Semiconductor device having non-magnetic single core inductor and producing the same
09/15/16Semiconductor device with transistor local interconnects
09/15/16Methods, apparatus and system for providing source-drain epitaxy layer with lateral over-growth suppression
09/15/16Reducing risk of punch-through in finfet semiconductor structure
09/15/16Method of forming a device including a floating gate electrode and a layer of ferroelectric material
09/15/16Integrated strained fin and relaxed fin
09/15/16Methods of forming embedded source/drain regions on finfet devices
09/15/16Common fabrication of multiple finfets with different channel heights
09/15/16Diamond shaped source drain epitaxy with underlying buffer layer
09/15/16Gate and source/drain contact structures for a semiconductor device
09/15/16Semiconductor structure including backgate regions and the formation thereof
09/15/16Three-dimensional transistor with improved channel mobility
09/15/16Fully depleted device with buried insulating layer in channel region
09/15/16Methods, apparatus and system for fabricating high performance finfet device
09/15/16Method, apparatus and system for using free-electron laser compatible euv beam for semiconductor wafer metrology
09/08/16Semiconductor devices having fins, and methods of forming semiconductor devices having fins
09/08/16Electromigration testing of interconnect analogues having bottom-connected sensory pins
09/08/16Method and device for splitting a high-power light beam to provide simultaneous sub-beams to photolithography scanners
09/08/16Raised fin structures and methods of fabrication
09/08/16Methods of forming a masking pattern and a semiconductor device structure
09/08/16Method of forming a semiconductor structure including two photoresist exposure processes for providing a gate cut
09/08/16Self-aligned via and air gap
09/08/16Removal of integrated circuit chips from a wafer
09/08/16Slotted substrate for die attach interconnects
09/08/16Esd snapback based clamp for finfet
09/08/16Ferroelectric finfet
09/08/16Fin isolation structures facilitating different fin isolation schemes
09/08/16Integrated circuits with self aligned contact structures for improved windows and fabrication methods
09/08/16Coil inductor
09/08/16Gate contact with vertical isolation from source-drain
09/08/16Etsoi with reduced extension resistance
09/01/16Methods for fabricating semiconductor structure with condensed silicon germanium layer
09/01/16Compound semiconductor structure
09/01/16Co-fabrication of non-planar semiconductor devices having different threshold voltages
09/01/16Self aligned raised fin tip end sti to improve the fin end epi quality
09/01/16Methods of performing fin cut etch processes for finfet semiconductor devices and the resulting devices
09/01/16Methods of modulating strain in pfet and nfet finfet semiconductor devices
09/01/16Dummy metal structure and forming dummy metal structure
09/01/16Metal-insulator-metal capacitor architecture
09/01/16Controlled junction transistors and methods of fabrication
09/01/16Integrated circuits and methods for fabricating integrated circuits with self-aligned vias
09/01/16Integrated circuits with fets having nanowires and methods of manufacturing the same
08/25/16Sample plan creation for optical proximity correction with minimal number of clips
08/25/16Metal lines having etch-bias independent height
08/25/16Method, apparatus and system for advanced channel cmos integration
08/25/16Method of forming a complementary metal oxide semiconductor structure with n-type and p-type field effect transistors having symmetric source/drain junctions and optional dual silicides
08/25/16Semiconductor structure including a split gate nonvolatile memory cell and a high voltage transistor, and the formation thereof
08/25/16Semiconductor structure including at least one electrically conductive pillar, semiconductor structure including a contact contacting an outer layer of an electrically conductive structure and the formation thereof
08/25/16Channel last replacement flow for bulk finfets
08/25/16Methods for fabricating integrated circuits using directed self-assembly including a substantially periodic array of topographical features that includes etch resistant topographical features for transferability control
08/18/16Modified tungsten silicon
08/18/16Wafer with improved plating current distribution
08/18/16Modified tungsten silicon
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08/18/16System and identifying operating temperatures and modifying of integrated circuits
08/18/16Systems and methods of controlling a manufacturing process for a microelectronic component
08/11/16Integrated circuits with middle of line capacitance reduction in self-aligned contact process flow and fabrication methods
08/11/16Methods of forming a complex gaa fet device at advanced technology nodes
08/04/16Method for a low profile etchable euv absorber layer with embedded particles in a photolithography mask
08/04/16Method for an efficient modeling of the impact of device-level self-heating on electromigration limited current specifications
08/04/16Methods of forming fin isolation regions on finfet semiconductor devices by implantation of an oxidation-retarding material
08/04/16Forming merged lines in a metallization layer by replacing sacrificial lines with conductive lines
08/04/16Semiconductor structure having source/drain gouging immunity
08/04/16Methods of forming nmos and pmos finfet devices and the resulting product
08/04/16Method of multi-wf for multi-vt and thin sidewall deposition by implantation for gate-last planar cmos and finfet technology
08/04/16Methods of forming fin isolation regions under tensile-strained fins on finfet semiconductor devices
08/04/16Methods of forming fin isolation regions on finfet semiconductor devices using an oxidation-blocking layer of material and by performing a fin-trimming process
08/04/16Dft structure for tsvs in 3d ics while maintaining functional purpose
08/04/16Extraction of resistance associated with laterally diffused dopant profiles in cmos devices
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08/04/16Electro-migration enhancing self-forming barrier process in copper mettalization
08/04/16Folded ballistic conductor interconnect line
08/04/16Single diffusion break with improved isolation and process window and reduced cost
08/04/16Special construct for continuous non-uniform rx finfet standard cells
08/04/16Semiconductor device with low-k spacer
08/04/16Fabricating fin structures with doped middle portions
08/04/16Ultrathin body (utb) finfet semiconductor structure
08/04/16Process for single diffusion break with simplfied process
08/04/16Methods of fabricating nanowire structures
08/04/16Fabricating transistors having resurfaced source/drain regions with stressed portions
08/04/16Graphene growth on a carbon-containing semiconductor layer
08/04/16Non-planar exciton transistor (bisfet) and methods for making
08/04/16Non-planar semiconductor structure with preserved isolation region
08/04/16Semiconductor structure having finfet ultra thin body
08/04/16Stacked nanowire device with variable number of nanowire channels
08/04/16Field effect transistor (fet) with self-aligned double gates on bulk silicon substrate, methods of forming, and related design structures
08/04/16Device structure with negative resistance characteristics
07/28/16Data-dependent self-biased differential sense amplifier
07/28/16Fin field effect transistor including asymmetric raised active regions
07/28/16Anchored stress-generating active semiconductor regions for semiconductor-on-insulator finfet
07/28/16Finfet crosspoint flash memory
07/28/16Methods for fabricating integrated circuits including back-end-of-the-line interconnect structures
07/21/16Constrained die adhesion cure process
07/21/16Bipolar junction transistor with multiple emitter fingers
07/21/16Methods for preventing oxidation damage during finfet fabrication
07/21/16Finfet with multilayer fins for multi-value logic (mvl) applications and forming
07/14/16Antiferromagnetic storage device
07/14/16Method of forming a semiconductor structure including a plurality of fins and an alignment/overlay mark
07/14/16Temperature-controlled implanting of a diffusion-suppressing dopant in a semiconductor structure
07/14/16Gate dielectric protection for transistors
07/14/16Cointegration of bulk and soi semiconductor devices
07/14/16Fdsoi - capacitor
07/14/16Devices with fully and partially silicided gate structures in gate first cmos technologies
07/14/16Semiconductor structure comprising an aluminum gate electrode portion and the formation thereof
07/14/16Semiconductor device comprising ferroelectric elements and fast high-k metal gate transistors
07/14/16Stress modulation in field effect transistors in reducing contact resistance and increasing charge carrier mobility
07/14/16Channel cladding last process flow for forming a channel region on a finfet device having a reduced size fin in the channel region
07/14/16Finfet structures having uniform channel size and methods of fabrication
07/14/16Methods for fabricating integrated circuits with improved implantation processes
07/14/16Integrated circuits with electronic fuse structures
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07/07/16Metrology pattern layout and use thereof
07/07/16Electrically insulated fin structure(s) with alternative channel materials and fabrication methods
07/07/16Semiconductor device with different fin sets
07/07/16High voltage lateral double-diffused metal oxide semiconductor field effect transistor (ldmosfet) having a deep fully depleted drain drift region
07/07/16Passive solar panel cooling
06/30/16Managing metadata for caching devices during shutdown and restart procedures
06/30/16Reducing defects and improving reliability of beol metal fill
06/30/16Fabrication methods for multi-layer semiconductor structures
06/30/16Semiconductor structures with isolated ohmic trenches and stand-alone isolation trenches and related method
06/30/16Methods of forming 3-d integrated semiconductor devices having intermediate heat spreading capabilities
06/30/16Fin resistor with overlying gate structure
06/30/16Method for forming single diffusion breaks between finfet devices and the resulting devices
06/30/16Capacitor strap connection structure and fabrication method
06/30/16Substrate resistor with overlying gate structure
06/30/16Finfet conformal junction and high epi surface dopant concentration
06/30/16Finfet conformal junction and abrupt junction with reduced damage
06/30/16Methods for forming finfets having a capping layer for reducing punch through leakage
06/30/16Confined early epitaxy with local interconnect capability
06/30/16Devices formed by performing a common etch patterning process to form gate and source/drain contact openings
06/30/16Methods of forming contact structures for semiconductor devices and the resulting devices
06/30/16Methods of forming transistor structures
06/30/16Bipolar transistor with extrinsic base region and methods of fabrication
06/30/16Soi based finfet with strained source-drain regions
06/30/16Defect-free strain relaxed buffer layer
06/30/16Finfet device with a substantially self-aligned isolation region positioned under the channel region
06/30/16Vertical slit transistor with optimized ac performance
06/30/16Hetero-channel finfet
06/30/16Finfet device including a uniform silicon alloy fin
06/30/16Conformal nitridation of one or more fin-type transistor layers
06/30/16High-reliability, low-resistance contacts for nanoscale transistors
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06/30/16Semiconductor devices with conductive contact structures having a larger metal silicide contact area
06/30/16Semiconductor devices with graphene nanoribbons
06/30/16Methods for retargeting circuit design layouts and for fabricating semiconductor devices using retargeted layouts
06/30/16Integrated circuits including magnetic tunnel junctions for magnetoresistive random-access memory and methods for fabricating the same
06/30/16Large area contacts for small transistors
06/23/16Trench epitaxial growth for a finfet device having reduced capacitance
06/23/16Nitride spacer for protecting a fin-shaped field effect transistor (finfet) device
06/23/16Silicon-germanium fin of height above critical thickness
06/23/16Silicon-germanium (sige) fin formation
06/23/16Discontinuous air gap crack stop
06/23/16Deep trench polysilicon fin first
06/23/16Uniform junction formation in finfets
06/23/16Zig-zag trench structure to prevent aspect ratio trapping defect escape
06/23/16Reduced trench profile for a gate
06/23/16Semiconductor devices having low contact resistance and low current leakage
06/23/16Bipolar junction transistors and methods of fabrication
06/23/16Methods of forming epi semiconductor material in a trench formed above a semiconductor device and the resulting devices
06/23/16Resonant radio frequency switch
06/16/16Optoelectronic structures having multi-level optical waveguides and methods of forming the structures
06/16/16Converting an xy tcam to a value tcam
06/16/16Structure to prevent deep trench moat charging and moat isolation fails
06/16/16Cmos gate contact resistance reduction
06/16/16Replacement metal gate including dielectric gate material
06/16/16Integrated circuits and methods of forming the same with effective dummy gate cap removal
06/16/16Wafer processing apparatuses and methods of operating the same
06/16/16Integrated circuits with capacitors and methods of producing the same
06/16/16Integrated circuits with dual silicide contacts and methods for fabricating same
06/09/16Ldmos finfet device and manufacture using a trench confined epitaxial growth process
06/09/16Chemical mechanical polishing method and apparatus
06/09/16Multiple threshold convergent opc model
06/09/16Sampling for opc model building
06/09/16Pellicle with aerogel support frame
06/09/16Method, computer readable storage medium and computer system for creating a layout of a photomask
06/09/16Lithography process window prediction based on design data
06/09/16Method for creating an otprom array possessing multi-bit capacity with tddb stress reliability mechanism
06/09/16Methods of forming metal silicide regions on semiconductor devices using an organic chelating material during a metal etch process
06/09/16Methods of forming features having differing pitch spacing and critical dimensions
06/09/16Method for recessing a carbon-doped layer of a semiconductor structure
06/09/16Self-aligned double patterning process for two dimensional patterns
06/09/16Methods of forming self-aligned contact structures on semiconductor devices and the resulting devices
06/09/16Methods of forming replacement gate structures for semiconductor devices and the resulting devices
06/09/16Methods of forming diffusion breaks on integrated circuit products comprised of finfet devices and the resulting products
06/09/16Merged source/drain and gate contacts in sram bitcell
06/09/16Semiconductor structure with bottom-free liner for top contact
06/09/16Tunable scaling of current gain in bipolar junction transistors
06/09/16Forming self-aligned nisi placement with improved performance and yield
06/09/16Finfet work function metal formation
06/09/16Epitaxially grown silicon germanium channel finfet with silicon underlayer
06/09/16Multi-gate field effect transistor (fet) including isolated fin body
06/09/16Replacement gate pfet materials having improved nbti performance
06/09/16Method of forming a semiconductor device structure and such a semiconductor device structure
06/09/16Method for forming air gap structure using carbon-containing spacer
06/09/16Semiconductor structure including a ferroelectric transistor and the formation thereof
06/09/16Finfet with wide unmerged source drain epi
06/09/16Finfet device including a dielectrically isolated silicon alloy fin
06/09/16Nitride layer protection between pfet source/drain regions and dummy gate during source/drain etch
06/09/16Epitaxial block layer for a fin field effect transistor device
06/09/16Channel cladding last process flow for forming a channel region on a finfet device
06/09/16Semiconductor device including embedded crystalline back-gate bias planes, related design structure and fabrication
06/09/16Method, apparatus and system for using free-electron laser compatible euv beam for semiconductor wafer processing
06/09/16Electronic circuit assembly substrate and device thereof
06/09/16Methods for retargeting vias and for fabricating semiconductor devices with retargeted vias
06/09/16Methods for optical proximity correction in the design and fabrication of integrated circuits using extreme ultraviolet lithography
06/09/16Integrated circuits including replacement gate structures and methods for fabricating the same
06/09/16Method for reducing gate height variation due to overlapping masks
06/02/16Optical proximity correction taking into account wafer topography
06/02/16Increased surface area of epitaxial structures in a mixed n/p type fin semiconductor structure with multiple epitaxial heads
06/02/16Fabricating stacked nanowire, field-effect transistors
06/02/16Pressure transfer process for thin film solar cell fabrication
06/02/163d multipath inductor
06/02/16Wafer carrier purge apparatuses, automated mechanical handling systems including the same, and methods of handling a wafer carrier during integrated circuit fabrication
05/26/16Recessing rmg metal gate stack for forming self-aligned contact
05/26/16Forward error correction synchronization
05/19/16Self-aligned via process flow
05/19/16Method and a high yield contact integration scheme
05/19/16Methods of forming alignment marks and overlay marks on integrated circuit products employing finfet devices and the resulting alignment/overlay mark
05/19/16Metal segments as landing pads and local interconnects in an ic device
05/19/16Tall strained high percentage silicon-germanium fins
05/19/16Integrated circuits with middle of line capacitance reduction in self-aligned contact process flow and fabrication methods
05/19/16Meander resistor
05/19/16Topological method to build self-aligned mtj without a mask
05/12/16Methods of forming a protective layer on an insulating layer for protection during formation of conductive structures
05/12/16Design rule clean layer marker
05/12/16Methods of forming a combined gate and source/drain contact structure and the resulting device
05/12/16Uniaxially-strained fd-soi finfet
05/12/16Alternative gate dielectric films for silicon germanium and germanium channel materials
05/12/16Methods of forming replacement gate structures on finfet devices and the resulting devices
05/12/16Methods of forming replacement gate structures on finfet devices and the resulting devices
05/12/16Selectively forming a protective conductive cap on a metal gate electrode
05/12/16Methods of forming products with finfet semiconductor devices without removing fins in certain areas of the product
05/12/16Semiconductor junction formation
05/12/16Semiconductor device comprising a multi-layer channel region
05/05/16Alternating space decomposition in circuit structure fabrication
05/05/16Achieving a critical dimension target based on resist characteristics
05/05/16Methods of forming an improved via to contact interface by selective formation of a metal silicide capping layer
05/05/16Methods for forming finfets having a capping layer for reducing punch through leakage
05/05/16Efficient main spacer pull back process for advanced vlsi cmos technologies
05/05/16Methods of forming an improved via to contact interface by selective formation of a conductive capping layer
05/05/16Embedded dram in replacement metal gate technology







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