Real Time Touch



new TOP 200 Companies filing patents this week

new Companies with the Most Patent Filings (2010+)




Real Time Touch

Similar
Filing Names

Globalfoundries Singapore Pte Ltd
Globalfoundries Singapore Pte Ltd_20131212

Globalfoundries Singapore Pte Ltd patents


Recent patent applications related to Globalfoundries Singapore Pte Ltd. Globalfoundries Singapore Pte Ltd is listed as an Agent/Assignee. Note: Globalfoundries Singapore Pte Ltd may have other listings under different names/spellings. We're not affiliated with Globalfoundries Singapore Pte Ltd, we're just tracking patents.

ARCHIVE: New 2018 2017 2016 2015 2014 2013 2012 2011 2010 2009 | Company Directory "G" | Globalfoundries Singapore Pte Ltd-related inventors


 new patent  Integrated circuits with programmable memory and methods for producing the same

Methods of producing integrated circuits and integrated circuits produced by those methods are provided. In an exemplary embodiment, a method of producing an integrated circuit includes forming first and second shallow trench isolations within a substrate, where the first and second shallow trench isolations have an initial shallow trench height.... Globalfoundries Singapore Pte Ltd

Device without zero mark layer

Devices and methods for forming a device are disclosed. The method includes providing a substrate having first and second surfaces. At least one through silicon via (TSV) opening is formed in the substrate. The TSV opening extends through the first and second surfaces of the substrate. An alignment trench corresponding... Globalfoundries Singapore Pte Ltd

Fin-based nonvolatile memory structures, integrated circuits with such structures, and methods for fabricating same

Integrated circuits, nonvolatile memory (NVM) structures, and methods for fabricating integrated circuits with NVM structures are provided. An exemplary integrated circuit includes a substrate and a dual-bit NVM structure overlying the substrate. The dual-bit NVM structure includes primary, first adjacent and second adjacent fin structures laterally extending in parallel over... Globalfoundries Singapore Pte Ltd

Mems device for harvesting sound energy and methods for fabricating same

Micro-Electro-Mechanical System (MEMS) devices for harvesting sound energy and methods for fabricating MEMS devices for harvesting sound energy are provided. In an embodiment, a method for fabricating a MEMS device for harvesting sound energy includes forming a pressure sensitive MEMS structure disposed over a semiconductor substrate and including a suspended... Globalfoundries Singapore Pte Ltd

High gain transistor for analog applications

An analog high gain transistor is disclosed. The formation of the analog high gain transistor is highly compatible with existing CMOS processes. The analog high gain transistor includes a double well, which includes the well implants of the low voltage (LV) and intermediate voltage (IV) transistors. In addition, the analog... Globalfoundries Singapore Pte Ltd

Integrated circuits with capacitors and methods for producing the same

Integrated circuits and methods of producing the same are provided. In an exemplary embodiment, an integrated circuit includes a first capacitor with a first gate overlying a first gate dielectric that in turn overlies a first channel. a second capacitor includes a second gate overlying a second gate dielectric that... Globalfoundries Singapore Pte Ltd

Creation of wide band gap material for integration to soi thereof

Devices and methods for forming a device are presented. The method for forming the device includes providing a support substrate having first crystal orientation. A trap rich layer is formed on the support substrate. An insulator layer is formed over a top surface of the trap rich layer. The method... Globalfoundries Singapore Pte Ltd

Integrated circuits with capacitors and methods for producing the same

Integrated circuits and methods of producing the same are provided. In an exemplary embodiment, an integrated circuit includes a substrate with an active layer overlying a buried insulator layer that in turn overlies a handle layer, where the active layer includes a first active well. A first source, a first... Globalfoundries Singapore Pte Ltd

Magnetic tunnel junction element

Devices and methods for forming a device are disclosed. A substrate having circuit component formed on a substrate surface is provided. Back end of line processing is performed to form an upper inter level dielectric (ILD) layer over the substrate. The upper ILD layer includes a plurality of ILD levels.... Globalfoundries Singapore Pte Ltd

Resistive memory device

A non-volatile memory device and a manufacturing method thereof are provided. The memory device includes a substrate, a lower cell dielectric layer with gate conductors and a body unit conductor disposed on the lower cell dielectric layer and gates. Memory element conductors are disposed on the body unit and lower... Globalfoundries Singapore Pte Ltd

Low power embedded one-time programmable (otp) structures

Devices and methods for forming a device are presented. The method includes providing a substrate prepared with at least a first region for accommodating an anti-fuse based memory cell. A fin structure is formed in the first region. The fin structure includes top and bottom fin portions and includes channel... Globalfoundries Singapore Pte Ltd

Integrated circuits with magnetic tunnel junctions and methods for producing the same

Integrated circuits and methods of producing the same are provided. In an exemplary embodiment, an integrated circuit includes a magnetic tunnel junction with a fixed layer, a total free structure, and a barrier layer between the fixed layer and the total free structure. The total free structure includes a first... Globalfoundries Singapore Pte Ltd

Integrated circuits with deep and ultra shallow trench isolations and methods for fabricating the same

Integrated circuits and methods of producing the same are provided herein. In accordance with an exemplary embodiment, an integrated circuit includes an SOI substrate with an active layer overlying a buried insulator layer that in turn overlies a handle layer. A source is defined within the active layer, and a... Globalfoundries Singapore Pte Ltd

Electrode arrangement for a pmut and pmut transducer array

Provided in accordance with the herein described exemplary embodiments are piezo micro-machined ultrasonic transducers (pMUTs) each having a first electrode that includes a first electrode portion and a second electrode portion. The second electrode portion is separately operable from the first electrode portion. A second electrode is spaced apart from... Globalfoundries Singapore Pte Ltd

Integrated circuits having shielded mems devices and methods for fabricating shielded mems devices

Integrated circuits having shielded micro-electromechanical system (MEMS) devices and method for fabricating shielded MEMS devices are provided. In an example, an integrated circuit having a shielded MEMS device includes a substrate, a ground plane including conductive material over the substrate, and a dielectric layer over the ground plane. The integrated... Globalfoundries Singapore Pte Ltd

Integrated circuits with selectively strained device regions and methods for fabricating same

Integrated circuits and methods for fabricating integrated circuits are provided. An exemplary method for fabricating an integrated circuit includes providing a substrate including a semiconductor layer over an insulator layer. The method includes selectively replacing portions of the semiconductor layer with insulator material to define an isolated semiconductor layer region.... Globalfoundries Singapore Pte Ltd

High voltage device with low rdson

High voltage devices and methods for forming a high voltage device are disclosed. The method includes providing a substrate having top and bottom surfaces. The substrate is defined with a device region and a recessed region disposed within the device region. The recessed region includes a recessed surface disposed lower... Globalfoundries Singapore Pte Ltd

Integrated circuits with magnetic tunnel junctions and methods for producing the same

Integrated circuits and methods of producing the same are provided. In an exemplary embodiment, an integrated circuit includes a fixed layer that is magnetic and a tunnel barrier layer overlying the fixed layer, where the tunnel barrier layer is non-magnetic. A total free layer overlies the tunnel barrier layer, where... Globalfoundries Singapore Pte Ltd

Integrated circuit electrostatic discharge protection

Integrated circuits with electrostatic discharge (ESD) protection and methods of providing ESD protection in an integrated circuit are provided. An ESD protection circuit the ESD protection circuit may incorporate a transistor, such as a MOSFET, and a voltage limiter coupled to a gate of the transistor. The voltage limiter may... Globalfoundries Singapore Pte Ltd

Piezoelectric micro-electromechanical system (mems)

A Microelectromechanical System (MEMS) device which includes a piezoelectric stack on a substrate separated by a dielectric layer is disclosed. The piezoelectric stack includes first and second piezoelectric layers with a first electrode below the first piezoelectric layer and a contact pad and a second electrode between the first and... Globalfoundries Singapore Pte Ltd

Integrated circuit electrostatic discharge protection

Integrated circuits (ICs) include electrostatic discharge protection including a transistor having a drain operably coupled to a first rail of the integrated circuit and a source operatively coupled to a second rail of the integrated circuit. A voltage regulating trigger circuit is operatively coupled to the first rail and to... Globalfoundries Singapore Pte Ltd

Methods for fabricating electronic devices including substantially hermetically sealed cavities and getter films

Electronic devices and methods for fabricating electronic devices are provided. In one example, an electronic device includes an electronic device body structure having a substantially hermetically sealed cavity formed therein. A getter film is in fluid communication with the substantially hermetically sealed cavity. Conductive features are accessible from outside the... Globalfoundries Singapore Pte Ltd

Domain wall magnetic memory

Devices and methods of forming a device are disclosed. The method includes providing a substrate with a cell region. Selector units and storage units are formed within the substrate. The selector unit includes first and second bipolar junction transistors (BJTs). The selector unit includes first and second bipolar junction transistors... Globalfoundries Singapore Pte Ltd

Integrated hall effect sensors with voltage controllable sensitivity

An integrated Hall effect sensor is disclosed. The integrated Hall effect sensor has high tunable sensitivity by varying the thickness of the Hall plate. The Hall effect sensor is integrated onto a crystalline-on-insulator substrate, such as silicon-on-insulator (SOI) substrate. The Hall plate is part of the surface substrate of the... Globalfoundries Singapore Pte Ltd

Low cost high performance eeprom device

Devices and methods for forming a device are presented. The method includes providing a substrate prepared with a cell area separated by other active areas by isolation regions. First and second lower sub-gates of first and second transistors are formed in the cell area. A common upper sub-gate of the... Globalfoundries Singapore Pte Ltd

Silicon controlled rectifier (scr) based esd protection device

The SCR-based ESD device has a 4-layered PNPN structure (NPN and PNP junction transistors) disposed in SOI having first and second device wells (N-well and P-well) abut forming a NP junction near a midline. First and second contact regions disposed in device wells are coupled to high and low power... Globalfoundries Singapore Pte Ltd

Reliable passivation for integrated circuits

Device and method for forming a device are presented. A substrate having circuit component and a back-end-of-line (BEOL) dielectric layer with interconnects is provided. A pad dielectric layer is formed over the BEOL dielectric layer. The pad dielectric layer includes a pad via opening which exposes a surface of one... Globalfoundries Singapore Pte Ltd

High density multi-time programmable resistive memory devices and forming thereof

Multi-time programmable (MTP) random access memory (RRAM) devices and methods for forming a MTP RRAM device are disclosed. The method includes providing a substrate. The substrate is prepared with at least a first region for accommodating one or more multi-programmable based resistive random access memory (RRAM) cell. A fin-type based... Globalfoundries Singapore Pte Ltd

Compact and reliable changeable negative voltage transmission circuit

A compact and reliable changeable negative voltage transmission circuit is described. It is very useful for applications need passing changeable negative voltage to selected pins in certain mode. The changeable negative voltage is 0V when enable signal EN is low and −V1 when enable signal EN is high. The circuit... Globalfoundries Singapore Pte Ltd

Three-axis monolithic mems accelerometers and methods for fabricating same

Three-axis monolithic microelectromechanical system (MEMS) accelerometers and methods for fabricating integrated capacitive and piezo accelerometers are provided. In an embodiment, a three-axis MEMS accelerometer includes a first sensing structure for sensing acceleration in a first direction. Further, the three-axis MEMS accelerometer includes a second sensing structure for sensing acceleration in... Globalfoundries Singapore Pte Ltd

Integrated circuits with high voltage and high density capacitors and methods of producing the same

Integrated circuits and methods of producing the same are provided. In an exemplary embodiment, an integrated circuit includes a high voltage capacitor having a first high voltage plate, a second high voltage plate directly overlying the first high voltage plate, and a high voltage dielectric film between the first and... Globalfoundries Singapore Pte Ltd

Transistor with source-drain silicide pullback

The disclosure is related to MV transistors with reduced gate induced drain leakage (GIDL) and impact ionization. The reduced GILD and impact ionization are achieved without increasing device pitch of the MV transistor. A low voltage (LV) device region and a medium voltage (MV) device region are disposed on the... Globalfoundries Singapore Pte Ltd

Integrated circuits with aluminum via structures and methods for fabricating the same

A method for fabricating an integrated circuit includes forming a first opening in an upper dielectric layer, the first opening having a first width, forming a second opening in a lower dielectric layer, the lower dielectric layer being below the upper dielectric layer, the second opening having a second width... Globalfoundries Singapore Pte Ltd

Integrated led and led driver units and methods for fabricating the same

Integrated LED and LED driver units and methods for fabricating integrated LED and LED driver units and products with a plurality of integrated LED and LED driver units are provided. In an embodiment, a method for fabricating an integrated LED and LED driver includes forming an LED driver in a... Globalfoundries Singapore Pte Ltd

Integrated circuits with electrostatic discharge protection

Integrated circuits and methods of producing such integrated circuits are provided. In an exemplary embodiment, an integrated circuit includes a first common line and a second common line. A first electrostatic discharge line is in electrical communication with the first and second common lines. The first electrostatic discharge line includes... Globalfoundries Singapore Pte Ltd

07/06/17 / #20170194490

Self-aligned high voltage ldmos

Devices and methods for forming a device are disclosed. The method includes providing a crystalline-on-insulator substrate having a bulk substrate and a surface substrate separated by a buried insulator layer. The surface substrate is defined with a device region. A transistor having a gate is formed in the device region.... Globalfoundries Singapore Pte Ltd

07/06/17 / #20170194491

High voltage device with low rdson

High voltage devices and methods for forming a high voltage device are disclosed. The method includes providing a substrate having top and bottom surfaces. The substrate is defined with a device region and a recessed region disposed within the device region. The recessed region includes a recessed surface disposed lower... Globalfoundries Singapore Pte Ltd

07/06/17 / #20170194504

Integrated circuits with gaps

Integrated circuits and methods of producing such integrated circuits are provided. In one example, an integrated circuit has a working layer that includes a semiconductor substrate. A handle layer underlies the working layer, where a gap is defined in the handle layer such that an upper gap surface underlies the... Globalfoundries Singapore Pte Ltd

07/06/17 / #20170194948

Ultra low voltage ring oscillator with redundant inverter

Redundant inverters with multiple inverter stages enable lower operating voltages to be used. For example, the use of multiple inverter stages produces a strong “0” or a strong “1” output signal. The strong output signal facilitates self-oscillation of a ring oscillator at lower voltages.... Globalfoundries Singapore Pte Ltd

06/29/17 / #20170186852

Semiconductor device with improved narrow width effect and making thereof

A device and a method for forming a device are disclosed. The method includes providing a substrate prepared with a device region. A device well having second polarity type dopants is formed in the substrate. A threshold voltage (VT) implant is performed with a desired level of second polarity type... Globalfoundries Singapore Pte Ltd

06/22/17 / #20170174507

Semiconductor devices with cavities and methods for fabricating semiconductor devices with cavities

Semiconductor devices with enclosed cavities and methods for fabricating semiconductor devices with enclosed cavities are provided. In an embodiment, a method for fabricating a semiconductor device with a cavity includes forming a sacrificial structure in and/or over a substrate. The method includes depositing a permeable layer over the sacrificial structure... Globalfoundries Singapore Pte Ltd

06/08/17 / #20170162501

Crack stop layer in inter metal layers

Devices and methods for forming a device are presented. The method includes providing a substrate prepared with interlevel dielectric (ILD) layers having interconnect levels. Each of the ILD layers has a metal level dielectric which includes one or more metal lines and a via level dielectric which includes one or... Globalfoundries Singapore Pte Ltd

05/25/17 / #20170148794

P-channel multi-time programmable (mtp) memory cells

Multi-time programmable (MTP) memory cells, integrated circuits including MTP memory cells, and methods for fabricating MTP memory cells are provided. In an embodiment, an MTP memory cell includes a semiconductor substrate, a p-well formed in the semiconductor substrate, and an n-well formed in the semiconductor substrate and isolated from the... Globalfoundries Singapore Pte Ltd

05/11/17 / #20170133373

Integrated circuits having multiple gate devices with dual threshold voltages and methods for fabricating such integrated circuits

Integrated circuits including multiple gate devices with dual threshold voltages and methods for fabricating such integrated circuits are provided. An exemplary method for fabricating an integrated device includes providing a semiconductor fin structure overlying a semiconductor substrate. The semiconductor fin structure has a first sidewall, a second sidewall opposite the... Globalfoundries Singapore Pte Ltd

05/04/17 / #20170121172

Integrated mems-cmos devices and integrated circuits with mems devices and cmos devices

Integrated MEMS-CMOS devices and integrated circuits with MEMS devices and CMOS devices are provided. An exemplary integrated MEMS-CMOS device is vertically integrated and includes a substrate having a first side and a second side opposite the first side. Further, the exemplary vertically integrated MEMS-CMOS device includes a CMOS device located... Globalfoundries Singapore Pte Ltd

05/04/17 / #20170125396

Stitched devices

A stitched device is disclosed. The stitched device includes first and second base devices having first and second stitched interconnects electrically coupled in a stitching level. This enables a single substrate of the stitched device to have electrically coupled first and second base devices.... Globalfoundries Singapore Pte Ltd

05/04/17 / #20170125427

Integrated circuits having an anti-fuse device and methods of forming the same

Integrated circuits and methods of forming the same are provided. An exemplary integrated circuit includes a semiconductor substrate and an anti-fuse device having a select transistor, a bitline contact, and a split channel transistor. The select transistor includes a select gate structure, a bitline source/drain region, and a shared source/drain... Globalfoundries Singapore Pte Ltd

05/04/17 / #20170125664

Spacer layer for magnetoresistive memory

A bottom pinned perpendicular magnetic tunnel junction (pMTJ) with high TMR which can withstand high temperature back-end-of-line (BEOL) processing is disclosed. The pMTJ includes a composite spacer layer between a SAF layer and a reference layer of the fixed magnetic layer of the pMTJ. The composite spacer layer includes a... Globalfoundries Singapore Pte Ltd

04/20/17 / #20170110465

Low power embedded one-time programmable (otp) structures

Devices and methods for forming a device are presented. The method includes providing a substrate prepared with at least a first region for accommodating an anti-fuse based memory cell. A fin structure is formed in the first region. The fin structure includes top and bottom fin portions and includes channel... Globalfoundries Singapore Pte Ltd

04/13/17 / #20170104029

Magnetism-controllable dummy structures in memory device

A device and a method of forming a device are disclosed. The method includes providing a substrate defined with first and second functional regions and first and second non-functional regions. The first non-functional region corresponds to a proximate memory region which is proximate to and surrounds the first functional region... Globalfoundries Singapore Pte Ltd

03/30/17 / #20170092523

Integrated circuits with alignment marks and methods of producing the same

Methods of producing integrated circuits with interposers and integrated circuits produced from such methods are provided. In an exemplary embodiment, a method of producing an integrated circuit includes forming a base layer overlying a substrate, and forming an alignment mark overlying the base layer. A first layer is formed overlying... Globalfoundries Singapore Pte Ltd

03/30/17 / #20170092584

Plasma discharge path

A semiconductor device with a temporary discharge path. During back-end-of-line (BEOL), the temporary discharge path discharges a plasma charge collected in a device well, such as a floating p-type well. After processing, the temporary discharge path is rendered non-function, enabling the device to function properly.... Globalfoundries Singapore Pte Ltd

03/30/17 / #20170092693

Integrated two-terminal device and logic device with compact interconnects having shallow via for embedded application

Devices and methods of forming a device are disclosed. The method includes providing a substrate defined with at least first and second regions and providing a plurality of interlevel dielectric (ILD) levels having tight pitch over the first and second regions of the substrate. An ILD level of which a... Globalfoundries Singapore Pte Ltd

03/23/17 / #20170084736

High voltage transistor

High voltage devices and methods for forming a high voltage device are disclosed. The high voltage device includes a substrate prepared with a device isolation region. The device isolation region defines a device region. The device region includes at least first and second source/drain regions and a gate region defined... Globalfoundries Singapore Pte Ltd

03/23/17 / #20170084820

Integrated magnetic random access memory with logic device

Integrating magnetic random access memory with logic is disclosed. The magnetic tunnel junction stack of a magnetic memory cell is disposed within a dielectric layer which serves as a via level of an interlevel dielectric layer with a metal level above the via level. An integration scheme for forming dual... Globalfoundries Singapore Pte Ltd

03/09/17 / #20170069619

Gate-grounded metal oxide semiconductor device

A gate-grounded metal oxide semiconductor (GGMOS) device is disclosed. The GGMOS is an n-type (GGNMOS) transistor used as an electrostatic discharge (ESD) protection device. The GGMOS includes a base extension region under an elevated source. The elevated source and base extension regions increase Leff and reduce beta, increasing performance of... Globalfoundries Singapore Pte Ltd

03/09/17 / #20170069753

Integrated circuits having tunnel transistors and methods for fabricating the same

Integrated circuits including tunnel transistors and methods for fabricating such integrated circuits are provided. An exemplary method for fabricating an integrated device includes forming a lower source/drain region in and/or over a semiconductor substrate. The method forms a channel region overlying the lower source/drain region. The method also forms an... Globalfoundries Singapore Pte Ltd

03/02/17 / #20170062554

High voltage transistor with reduced isolation breakdown

Devices and methods for forming a device are disclosed. The device includes a substrate with a device region having a length and a width direction. An isolation region surrounds the device region of which an isolation edge abuts the device region. A transistor is disposed in the device region. The... Globalfoundries Singapore Pte Ltd

02/23/17 / #20170054039

Photonic devices with through dielectric via interposer

Device and a method of forming a device are disclosed. The method includes providing a substrate. The substrate includes a buried oxide (BOX) layer having an initial thickness TB1 sandwiched in between a top surface layer and a base substrate. The top surface layer is processed to form one or... Globalfoundries Singapore Pte Ltd

02/09/17 / #20170040272

Integrated circuits having copper bonding structures with silicon carbon nitride passivation layers thereon and methods for fabricating same

Integrated circuits having copper bonding structures with silicon carbon nitride passivation layers and methods for making the same are provided. In an exemplary embodiment, an integrated circuit includes a substrate and a copper bonding structure having a contact surface. The copper bonding structure overlies the substrate. A passivation layer formed... Globalfoundries Singapore Pte Ltd

01/26/17 / #20170025471

Mram chip magnetic shielding

Emerging memory chips and methods for forming an emerging memory chip are presented. For example, magnetic random access memory (MRAM) chip magnetic shielding and methods of forming a magnetic shield processed at the wafer-level are disclosed. The method includes providing a magnetic shield at the front side of the chip,... Globalfoundries Singapore Pte Ltd

01/26/17 / #20170025601

3d mram with through silicon vias or through silicon trenches magnetic shielding

Emerging memory chips and methods for forming an emerging memory chip are presented. For example, magnetoresistive random access memory (MRAM) chip magnetic shielding and vertical stacking capabilities processed at the wafer-level are disclosed. The method includes providing a magnetic shield in the through silicon vias and/or through silicon trenches surrounding... Globalfoundries Singapore Pte Ltd

01/05/17 / #20170005111

Creation of wide band gap material for integration to soi thereof

Devices and methods for forming a device are presented. The method for forming the device includes providing a support substrate having first crystal orientation. A trap rich layer is formed on the support substrate. An insulator layer is formed over a top surface of the trap rich layer. The method... Globalfoundries Singapore Pte Ltd








ARCHIVE: New 2018 2017 2016 2015 2014 2013 2012 2011 2010 2009



###

This listing is an abstract for educational and research purposes is only meant as a recent sample of applications filed, not a comprehensive history. Freshpatents.com is not affiliated or associated with Globalfoundries Singapore Pte Ltd in any way and there may be associated servicemarks. This data is also published to the public by the USPTO and available for free on their website. Note that there may be alternative spellings for Globalfoundries Singapore Pte Ltd with additional patents listed. Browse our Agent directory for other possible listings. Page by FreshPatents.com

###