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Hemlock Semiconductor Corporation patents


Recent patent applications related to Hemlock Semiconductor Corporation. Hemlock Semiconductor Corporation is listed as an Agent/Assignee. Note: Hemlock Semiconductor Corporation may have other listings under different names/spellings. We're not affiliated with Hemlock Semiconductor Corporation, we're just tracking patents.

ARCHIVE: New 2018 2017 2016 2015 2014 2013 2012 2011 2010 2009 | Company Directory "H" | Hemlock Semiconductor Corporation-related inventors


Method of determining a concentration of a material not dissolved by silicon etchants contaminating a product

A method of determining a concentration of plastic or other material not dissolved by silicon etchants contaminating a silicon product comprising: obtaining a sample of the silicon product contaminated with the plastic or other material not dissolved by silicon etchants; placing the sample of the silicon product into a ultrasonic bath liquid to produce a slurry comprising the ultrasonic bath liquid, silicon dust, and the plastic or other material not dissolved by silicon etchants; filtering the slurry with a first filter to produce a cake comprising the silicon dust and the plastic or other material not dissolved by silicon etchants separated from the sample of the silicon product; and analyzing the cake to determine the concentration of plastic or other material not dissolved by silicon etchants contaminating the silicon product.. . ... Hemlock Semiconductor Corporation

Low impurity detection method for characterizing metals within a surface and sub-surface of polycrystalline silicon

A method of quantifying metal impurities on a silicon product, includes obtaining a sample of the silicon product; etching or chemically treating a surface of silicon product to retrieve a predetermined amount of silicon product mass; and testing and measuring the etched portion for the presence of metal impurities using a testing measurement technique selected from icp-ms, icp-oes, ic, or a combination comprising at least one for the foregoing, wherein the metal impurities are selected from sodium, magnesium, nickel, copper, zinc, molybdenum, tungsten, aluminum, potassium, calcium, titanium, chromium, manganese, iron, cobalt, or a combination comprising at least one of the foregoing.. . ... Hemlock Semiconductor Corporation

Surface conditioning of conveyor materials or contact surfaces

A method of reducing contamination in a silicon product includes: moving silicon pieces along a conveyance system, wherein the conveyance system comprises a liner having a polished surface finish with a surface roughness of less than or equal to 12 microinches; and moving the silicon pieces across the conveyance system, wherein the silicon pieces contain a reduced number of impurities as compared to silicon pieces in contact with a liner having an unpolished surface. A crushing tool includes: crushing tool elements configured to crush silicon into fragments, wherein the crushing tool elements comprise a surface comprising a polished surface finish with a surface roughness of less than or equal to 12 microinches. ... Hemlock Semiconductor Corporation

Dichlorosilane compensating control strategy for improved polycrystalline silicon growth

A method of improving polycrystalline silicon growth in a reactor, including: introducing a chlorosilane feed composition comprising trichlorosilane and dichlorosilane into a deposition chamber, wherein the deposition chamber contains a substrate; blending the chlorosilane feed composition with hydrogen gas to form a feed composition; adjusting a baseline flow of chlorosilane and hydrogen gas into the deposition chamber to achieve a pre-determined total flow and a pre-determined chlorosilane feed composition set point; applying pressure to the deposition chamber and energy to the substrate in the deposition chamber to form polycrystalline silicon; measuring the amount of dichlorosilane present in the chlorosilane feed composition and determining an offset value from a target value of dichlorosilane present in the chlorosilane feed composition; adjusting the chlorosilane feed composition set point by an amount inversely proportional to the dichlorosilane offset value; and depositing the formed polycrystalline silicon onto the substrate.. . ... Hemlock Semiconductor Corporation








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