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Hermes epitek Corporation
Hermes epitek Corp

Hermes epitek Corp patents


Recent patent applications related to Hermes epitek Corp. Hermes epitek Corp is listed as an Agent/Assignee. Note: Hermes epitek Corp may have other listings under different names/spellings. We're not affiliated with Hermes epitek Corp, we're just tracking patents.

ARCHIVE: New 2018 2017 2016 2015 2014 2013 2012 2011 2010 2009 | Company Directory "H" | Hermes epitek Corp-related inventors


Assembling device used for semiconductor equipment

The present invention is directed to an assembling device used for semiconductor equipment. The assembling device includes a chamber lid, a ceiling, a suspension part and a driving part. The ceiling is disposed below the chamber lid. The suspension part is inserted through the chamber lid, and to be hooked... Hermes epitek Corp

Assembling device used for semiconductor equipment

The present invention is directed to an assembling device used for semiconductor equipment. The assembling device includes a chamber lid, a ceiling, a suspension part, a driving part and receptacles. The ceiling is disposed below the chamber lid. The suspension part is inserted through the chamber lid, and to be... Hermes epitek Corp

Gas distributing injector applied in mocvd reactor

The present invention relates to a gas distributing injector applied in MOCVD reactor. The gas distributing injector comprises at least one gas distributing layer for distributing different gases. The distributing layer is a single-layered structure. The distributing layer comprises a disk-shaped body, a plurality of first gas channels, a plurality... Hermes epitek Corp

Semiconductor multilayer structure

The present invention is directed to a semiconductor multilayer structure. A semiconductor multilayer structure comprises a silicon substrate, a buffer layer deposited on the silicon substrate, and the buffer layer is an aluminum contained nitride buffer layer; a superlattice layer deposited on the buffer layer, wherein the superlattice layer comprises... Hermes epitek Corp

Fabrication semiconductor multilayer structure

The present invention is directed to a fabrication method of a semiconductor multilayer structure. By utilizing the indium-containing catalyst and/or gallium-containing catalyst, the aluminum migration can be enhanced to increase quality and flatness of the aluminum contained nitride buffer layer. Furthermore, the costs and energy consumption can be reduced too.... Hermes epitek Corp








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This listing is an abstract for educational and research purposes is only meant as a recent sample of applications filed, not a comprehensive history. Freshpatents.com is not affiliated or associated with Hermes epitek Corp in any way and there may be associated servicemarks. This data is also published to the public by the USPTO and available for free on their website. Note that there may be alternative spellings for Hermes epitek Corp with additional patents listed. Browse our Agent directory for other possible listings. Page by FreshPatents.com

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