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Hitachi Kokusai Electric Inc
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Hitachi Kokusai Electric Inc patents


Recent patent applications related to Hitachi Kokusai Electric Inc. Hitachi Kokusai Electric Inc is listed as an Agent/Assignee. Note: Hitachi Kokusai Electric Inc may have other listings under different names/spellings. We're not affiliated with Hitachi Kokusai Electric Inc, we're just tracking patents.

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 new patent  Substrate processing apparatus, manufacturing semiconductor device and vaporizer

A vaporization system includes a vaporization chamber having a first portion and a second portion. A first fluid supply part is connected to the first portion of the vaporization chamber, and configured to supply a mixed fluid in which a first carrier gas and a liquid precursor are mixed, toward... Hitachi Kokusai Electric Inc

Method of manufacturing semiconductor device

In a method of manufacturing a semiconductor device, by performing a predetermined number of times a cycle of performing supplying reducing gas to a substrate having an insulating surface and a conductive surface and supplying metal-containing gas to the substrate in a time-division manner, a metal film is formed selectively... Hitachi Kokusai Electric Inc

Receiver, wireless communication system, and wireless communication method

A wireless communication technique in which information that has been encoded and interleaved (the sequence of bits has been rearranged) on the transmission side is subjected to iterative decoding processing by using a demodulator, a deinterleaver, a decoder, and an interleaver on the receiving side.... Hitachi Kokusai Electric Inc

Substrate processing apparatus and non-transitory computer-readable recording medium

There is provided a technique for detecting a fault of a device from an error in device data. According to the technique described herein, there is provided a substrate processing apparatus including: a pipe heater configured to heat a gas pipe; a temperature detecting unit provided at the pipe heater... Hitachi Kokusai Electric Inc

Matching device and matching method

A matching device includes: a directional coupler that detects a traveling wave and a reflected wave; a matching circuit that has a first variable capacitance capacitor, a second variable capacitance capacitor and an inductance; and a control unit that calculates a reflection coefficient based on the traveling wave and the... Hitachi Kokusai Electric Inc

Substrate processing apparatus, nozzle base, and manufacturing semiconductor device

Provided is a processing container formed of a reaction tube and a manifold that supports the reaction tube from below, and adapted to process a substrate inside, a nozzle adapted to supply a processing gas to the substrate, and a connecting portion adapted to erect the nozzle inside the processing... Hitachi Kokusai Electric Inc

Substrate processing apparatus and heat insulating pipe structure

A configuration including a process chamber for processing a substrate, a gas supply system including supply pipe for supplying a source gas into the process chamber, and an exhaust system including exhaust pipe for discharging an exhaust gas containing the source gas from the process chamber, in which at least... Hitachi Kokusai Electric Inc

Method of manufacturing semiconductor device

Disclosed is a method of manufacturing a semiconductor device. The method includes: (a) accommodating a substrate having a plurality of carbon-containing films protruding from a surface of the substrate; (b) forming a silicon-containing film on a surface of the plurality of carbon-containing films and a surface of the substrate by... Hitachi Kokusai Electric Inc

Method of manufacturing semiconductor device

A method of manufacturing a semiconductor device includes: processing a substrate by operating a processing apparatus included in a substrate processing apparatus, based on a first process setting; acquiring apparatus data of the processing apparatus when processing the substrate; generating first evaluation data of the processing apparatus based on an... Hitachi Kokusai Electric Inc

Method of manufacturing semiconductor device

Described herein is a technique capable of suppressing the deviation in the characteristic of the semiconductor device. A method of manufacturing a semiconductor device may include: (a) receiving a data obtained by measuring a width of a first pillar between first grooves in a center region of a substrate and... Hitachi Kokusai Electric Inc

Liquid-cooling cold plate and manufacturing same

In a method of manufacturing a liquid-cooling cold plate, cast molding is performed after embedding a metal pipe for supplying a cooling liquid inside a casting mold. Fixing brackets to be attached to the metal pipe is provided to maintain a positional relationship between a plurality of portions of the... Hitachi Kokusai Electric Inc

Method of manufacturing semiconductor device

A technique for forming a metal film having a high work function while suppressing an increase in EOT is provided. According to the technique, there is provided a method of manufacturing a semiconductor device, including: (a) performing a first cycle a first number of times to form a first metal... Hitachi Kokusai Electric Inc

Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium

A method of manufacturing a semiconductor device includes: forming a film on a substrate by performing a cycle a predetermined number of times. The cycle includes non-simultaneously performing: supplying a precursor from a first nozzle to a substrate and exhausting the precursor from an exhaust port; supplying a first reactant... Hitachi Kokusai Electric Inc

Substrate processing apparatus

A substrate processing apparatus includes: a first process chamber where a substrate is subjected to a first process; a second process chamber where the substrate is subjected to a second process; a substrate support unit; a first electrode; a second electrode; an elevating unit; a gas supply unit supplying a... Hitachi Kokusai Electric Inc

Video surveillance system and video surveillance method

A video surveillance system includes surveillance cameras; a video converting and combining unit; an encoder for encoding a combined video from the video converting and combining unit; a decoder for decoding the combined video transmitted from the encoder; a video converting and splitting unit for splitting the combined video decoded... Hitachi Kokusai Electric Inc

Cleaning method, manufacturing semiconductor device, substrate processing apparatus, and a non-transitory computer-readable recording medium

There is provided a cleaning method improving cleaning efficiency in a process container after an oxygen-containing film forming process is having performed, including: (a) supplying at least a hydrogen fluoride gas into the process container; and (b) supplying an alcohol into the process container in a state where supply of... Hitachi Kokusai Electric Inc

Wilkinson combiner and wilkinson divider

A Wilkinson combiner includes: a plurality of splitting units that splits signals inputted from two ports; an isolating unit that connects one ends of the signals split at the plurality of splitting units to each other; and a combiner that connects other ends of the signals split at the plurality... Hitachi Kokusai Electric Inc

Cleaning method, manufacturing semiconductor device and substrate processing apparatus

A cleaning method includes: removing deposits adhered to an inside of a processing vessel by forming a film on a substrate in the processing vessel, and thereafter, supplying a cleaning gas into the processing vessel, wherein the removing the deposits includes: a first step of supplying the cleaning gas into... Hitachi Kokusai Electric Inc

Wireless communication system and wireless communication method

Provided is a technique for efficiently using a channel bandwidth in a wireless communication system provided with a function for dividing a frequency channel into a plurality of segments and performing relay using the segments that differ from relay section to relay section. In a second scheme, an upstream direction... Hitachi Kokusai Electric Inc

Wireless communication system, mobile communication apparatus, and terminal device

A wireless communication system comprises a mobile communication apparatus, and a terminal device. The mobile communication apparatus comprises a first wireless unit that wirelessly communicates control information to and from the terminal device in a first communication method, and a second wireless unit that wirelessly communicates user information to and... Hitachi Kokusai Electric Inc

Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium

There is provided a method of manufacturing a semiconductor device. The method includes: forming a first amorphous silicon film on a substrate in a process chamber; and etching a portion of the first amorphous silicon film using a hydrogen chloride gas under a temperature at which an amorphous state of... Hitachi Kokusai Electric Inc

Substrate processing apparatus, recording medium, and fluid circulation mechanism

A substrate processing apparatus, includes a reaction furnace, a preparatory chamber provided below the reaction furnace, an elevating mechanism configured to raise/lower a substrate holder between the reaction furnace and the preparatory chamber, a fluid circulation mechanism including a suction part for sucking a fluid within the preparatory chamber, a... Hitachi Kokusai Electric Inc

Substrate processing apparatus, manufacturing semiconductor device, and thermocouple support

A substrate processing apparatus includes: a reaction tube configured to accommodate a substrate holder holding a plurality of substrates and process a substrate held on the substrate holder; a heating unit installed outside the reaction tube and configured to heat an inside of the reaction tube; a protection tube installed... Hitachi Kokusai Electric Inc

Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium

A method of manufacturing a semiconductor device is provided. The method includes forming a film on a substrate by causing a first precursor and a second precursor to intermittently react with each other by repeating a cycle a plurality of times, the cycle alternately performing supplying the first precursor, which... Hitachi Kokusai Electric Inc

Substrate processing apparatus, lid cover and manufacturing semiconductor device

A technique capable of preventing by-products from adhering to a lower portion of a process vessel utilizes a substrate processing apparatus including: a process vessel having a process chamber; a lid configured to close a lower end opening of the process vessel; a substrate retainer; an insulating structure; a process... Hitachi Kokusai Electric Inc

Teaching jig, substrate processing apparatus, and teaching method

A teaching jig includes: a first plate that determines a substrate loading position in a forward/backward direction with respect to a substrate holder which holds a substrate; a second plate that determines the substrate loading position in a leftward/rightward direction with respect to the substrate holder, the second plate being... Hitachi Kokusai Electric Inc

Substrate processing apparatus and recording medium

A substrate processing apparatus includes a data collection controller and an operation part. The data collection controller is configured to hold monitoring item list information and component management information. Each of the monitoring item list information and the component management information holds; monitoring item information indicative of a monitoring item... Hitachi Kokusai Electric Inc

Substrate processing apparatus

A substrate processing apparatus includes: a plurality of modules configured to process a substrate; a transfer chamber adjoining the modules; a transfer part configured to transfer the substrate to one of the modules; a reception part configured to receive process information of the substrate; a detection part configured to detect... Hitachi Kokusai Electric Inc

Doherty amplifier and power amplifier

A Doherty amplifier used in a Z ohm based system is provided with a carrier amplifier, a peak amplifier, and an impedance transforming line for transforming the load of the carrier amplifier when an input signal is small. The impedance transforming line has a characteristic impedance lower than Z ohms... Hitachi Kokusai Electric Inc

Communication timing control method, communication service system and wireless communication terminal

A communication timing control method for a communication service system provided with wireless communication devices, a wireless network, and an upper server groups the wireless communication devices using device information including characteristics of a service provided to the wireless communication devices entering the communication service system via the wireless network,... Hitachi Kokusai Electric Inc

Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium

A method of manufacturing a semiconductor device includes forming a film on a substrate by performing a cycle a predetermined number of times. The cycle includes: supplying a precursor to the substrate in a process chamber and exhausting the precursor from a first exhaust system; and supplying a reactant to... Hitachi Kokusai Electric Inc

Method of manufacturing semiconductor device

Described herein is a technique capable of improving the productivity of manufacturing of a semiconductor device in a method of processing a film by repeating different processes. A method of manufacturing a semiconductor device may include: (a) loading a substrate into a process vessel; (b) forming a first layer by... Hitachi Kokusai Electric Inc

Method for manufacturing semiconductor device and recording medium

To reduce a hydroxy group in a silicon oxide film formed at a low temperature and obtain a silicon oxide film with an excellent film quality, (a) accommodating a substrate on a surface of which a silicon oxide film formed at a processing temperature of 300° C. or lower is... Hitachi Kokusai Electric Inc

Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium

There is provided a method of manufacturing a semiconductor device, which includes: forming a first seed layer containing silicon and germanium on a substrate by performing, a predetermined number of times, a cycle which includes supplying a first process gas containing silicon or germanium and containing a halogen element to... Hitachi Kokusai Electric Inc

Method of manufacturing semiconductor device

Provided is a technique capable of obtaining a satisfactory yield for a semiconductor device with an air gap. The technique includes a method of manufacturing a semiconductor device, including: (a) receiving a thickness information of a wiring layer formed on a substrate including: a first interlayer insulation film; and the... Hitachi Kokusai Electric Inc

12/07/17 / #20170351924

Crowd monitoring system

The present invention provides a crowd monitoring system with which it is possible to obtain a crowd density accurately, irrespective of the congestion state. This crowd monitoring system 100 is provided with: an image acquiring unit 101 which acquires a plurality of images; an arithmetic logic unit 108; and a... Hitachi Kokusai Electric Inc

12/07/17 / #20170352556

Substrate-processing apparatus and manufacturing semiconductor device

A substrate processing apparatus includes a process chamber and a transfer device configured to transfer a plurality of substrates to a substrate retainer. The transfer device includes a base; a first moving unit capable of linear motion; a first drive unit to drive the first moving unit. The first drive... Hitachi Kokusai Electric Inc

12/07/17 / #20170352745

Method of manufacturing semiconductor device

Described is a technique for uniformly doping a silicon substrate having a Fin structure with a dopant. A method of manufacturing a semiconductor device may includes: (a) forming a dopant-containing film containing a dopant on a silicon film by performing a cycle a predetermined number of times, the, cycle including:... Hitachi Kokusai Electric Inc

12/07/17 / #20170353993

Wireless communication system

In a wireless communication system, a plurality of communication devices performs transmission and reception, each communication device including a signal processing unit/transmitting unit, a MAC layer processing unit and an IP layer processing unit. The IP layer processing unit includes an ad hoc network processing unit, an address information management... Hitachi Kokusai Electric Inc

11/30/17 / #20170345617

Substrate processing apparatus

A substrate processing apparatus capable of suppressing the effects of plasma on a structure formed on a substrate includes: a process chamber where a substrate is processed; a substrate support unit; a gas supply unit to supply a gas to the substrate via a buffer chamber; an electrode including a... Hitachi Kokusai Electric Inc

11/30/17 / #20170345645

Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium

A method of manufacturing a semiconductor device, includes forming a film containing a predetermined element on a substrate by supplying a precursor containing the predetermined element to the substrate having a first temperature in a process chamber, changing a temperature of the substrate to a second temperature higher than the... Hitachi Kokusai Electric Inc

11/23/17 / #20170335452

Substrate treatment apparatus, reaction tube and semiconductor device manufacturing method

A substrate treatment apparatus includes: a reaction tube including a substrate treatment region in which a substrate is treated; and a furnace opening member disposed in a lower portion of the reaction tube. The reaction tube includes a flange formed to protrude outward in the lower portion of the reaction... Hitachi Kokusai Electric Inc

11/23/17 / #20170335458

Substrate processing apparatus, heater and manufacturing semiconductor device

Described herein is a technique capable of reducing the time necessary for stabilizing the inner temperature of the processing furnace. A substrate processing apparatus may include: a wafer retainer configured to support a plurality of wafers; an upright cylindrical process vessel; a seal cap configured to cover an opening at... Hitachi Kokusai Electric Inc

11/23/17 / #20170338106

Substrate processing method and substrate processing apparatus

A manufacturing method of a semiconductor device includes generating hydrogen radicals by plasma excitation of hydrogen gas and exposing a surface of a substrate on which silicon and metal are exposed to a reducing atmosphere created with the hydrogen radicals, and generating hydrogen radicals and hydroxyl radicals by plasma excitation... Hitachi Kokusai Electric Inc

11/23/17 / #20170339350

Mobile studio and using mobile studio

A mobile studio and a method for using the mobile studio are disclosed. The mobile studio is provided with lower and upper frameworks. A lower framework includes a planar upper-tier frame and a planar lower-tier frame, the planar upper-tier frame has a connecting tab to secure the mobile studio to... Hitachi Kokusai Electric Inc

10/26/17 / #20170309490

Method of manufacturing semiconductor device

A method of manufacturing a semiconductor device includes: forming an amorphous metal film on a substrate by time-divisionally conducting a cycle a predetermined number of times, the cycle including: (a) simultaneously supplying a metal-containing gas and a first reducing gas to the substrate to form a first amorphous metal layer... Hitachi Kokusai Electric Inc

10/19/17 / #20170298508

Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium

A method of manufacturing a semiconductor device, includes: forming an oxynitride film on a substrate by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing supplying a precursor gas to the substrate through a first nozzle, supplying a nitriding gas to the substrate through a second... Hitachi Kokusai Electric Inc

10/19/17 / #20170300044

Substrate processing apparatus and apparatus management controller

A substrate processing apparatus includes an operating unit for transmitting apparatus data to a memory, the apparatus data being required while a recipe for processing a substrate is executed; and a data matching unit for comparing the apparatus data stored in the memory. When an error occurs in the substrate... Hitachi Kokusai Electric Inc

10/19/17 / #20170301539

Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium

A method of manufacturing a semiconductor device includes forming a film on a substrate by overlapping the following during at least a certain period: (a) supplying a first source to the substrate, the first source including at least one of an inorganic source containing a specific element and a halogen... Hitachi Kokusai Electric Inc

10/12/17 / #20170292188

Substrate processing apparatus

A substrate processing apparatus includes: a substrate retainer configured to support a substrate; a heat-insulating unit; a transfer chamber; and a gas supply mechanism configured to supply a gas into the transfer chamber, the gas supply mechanism including: a first gas supply mechanism configured to supply the gas into an... Hitachi Kokusai Electric Inc

10/12/17 / #20170294302

Semiconductor device manufacturing method, substrate processing apparatus, and recording medium

A method includes forming a film on a substrate by performing a cycle n times (where n is an integer equal to or greater than 1), the cycle including alternately performing: performing a set m times (where m is an integer equal to or greater than 1), the set including... Hitachi Kokusai Electric Inc

10/12/17 / #20170294305

Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium

There is provided a method of manufacturing a semiconductor device, comprising forming a film on a substrate in a process chamber by performing a cycle a predetermined number of times. The cycle includes alternately performing supplying a halogen-based first process gas to the substrate in the process chamber, and supplying... Hitachi Kokusai Electric Inc

10/12/17 / #20170294318

Substrate processing device, manufacturing semiconductor device, and reaction tube

A substrate processing apparatus includes: a substrate holding member configured to hold a plurality of substrates; a reaction tube configured to accommodate the substrate holding member and process the substrates; a processing gas supply system configured to supply a processing gas into the reaction tube; and an exhaust system configured... Hitachi Kokusai Electric Inc

10/12/17 / #20170294879

Wireless communication device and power source device

A wireless communication device configured to prevent a transmission time period for sending a wireless signal and a receiving time period for receiving a wireless signal from being overlap, comprises: a transmitter that includes an orthogonal modulator that orthogonally modulates an IQ-modulated modulation signal and a transmission power amplifier that... Hitachi Kokusai Electric Inc

10/12/17 / #20170295302

Image capturing method and image capturing apparatus

A color-separation optical system for image capture includes three rolling shutter CMOS image capturing elements of B, G and R, respectively capturing: an image of B at the speed of an integer N multiple of the number of output picture frames, an image of G at the speed of an... Hitachi Kokusai Electric Inc

10/05/17 / #20170283945

Substrate processing apparatus

A substrate processing apparatus includes: a process chamber where a substrate is processed; a substrate support, disposed in the process chamber, where the substrate is placed; a transfer chamber disposed under the process chamber; a partition dividing the process and transfer chambers; a first heating unit disposed in the substrate... Hitachi Kokusai Electric Inc

10/05/17 / #20170283949

Substrate processing apparatus

Disclosed is a substrate processing apparatus capable of improving the characteristic of a film formed on the surface of a wafer, using a single-wafer type substrate processing apparatus which heats and processes a wafer. The substrate processing apparatus may include: a processing vessel where a substrate is processed; a substrate... Hitachi Kokusai Electric Inc

10/05/17 / #20170283950

Substrate processing apparatus, manufacturing semiconductor device, and recording medium

In a process chamber in which a substrate is processed, a gas supply unit is in the process chamber and configured to supply a process gas that processes the substrate. A plasma generation unit is in the process chamber and configured to activate the process gas, and a buffer part... Hitachi Kokusai Electric Inc

10/05/17 / #20170285613

Substrate processing apparatus, device management controller, and recording medium

A substrate processing apparatus includes a device management controller including a parts management control part configured to monitor the state of parts constituting the apparatus, a device state monitoring control part configured to monitor integrity of device data obtained from an operation state of the parts constituting the apparatus, and... Hitachi Kokusai Electric Inc

10/05/17 / #20170287696

Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium

A semiconductor device manufacturing method includes: vertically arranging and storing a plurality of substrates in a processing container and forming a condition where at least an upper region or a lower region relative to a substrate disposing region where the plurality of substrates are arranged is blocked off by an... Hitachi Kokusai Electric Inc

10/05/17 / #20170287707

Semiconductor device manufacturing method and recording medium

A method of manufacturing a semiconductor device includes: preparing a substrate processing apparatus including a substrate process chamber having a plasma-generation space where a nitrogen-containing gas is plasma-exited and a process space where a substrate is mounted in communication with the plasma-generation space, an inductive coupling structure configured by a... Hitachi Kokusai Electric Inc

10/05/17 / #20170287716

Method of manufacturing semiconductor device

A method of manufacturing a semiconductor device, includes rotating a substrate support tool accommodated in a process chamber and configured to support a substrate with a rail, and supplying a process gas including a first gas to the substrate from a first gas supply hole positioned at an outer side... Hitachi Kokusai Electric Inc

10/05/17 / #20170287731

Method of manufacturing semiconductor device

A method of manufacturing a semiconductor device includes: (a) loading into a process chamber a substrate including: a wiring layer including a first interlayer insulating film, a plurality of copper-containing films formed on the first interlayer insulating film and used as a wiring, an inter-wire insulating film electrically insulating the... Hitachi Kokusai Electric Inc

10/05/17 / #20170287786

Method of manufacturing semiconductor device

A process of forming a first mask on a first region of a metal film formed on a surface of a substrate, a process of modulating a work function of a first exposed region of the metal film, using plasma of a first process gas, a process of removing the... Hitachi Kokusai Electric Inc

10/05/17 / #20170289471

Image pickup device and image pickup method

The purpose of the present invention is to correct the reduced degree of modulation in a diagonal direction in a four-plate camera having a frame memory and R, G1, G2, and B image pickup elements among which two green image pickup elements (G1, G2) shift pixels diagonally. This image pickup... Hitachi Kokusai Electric Inc

Patent Packs
10/05/17 / #20170289912

Communication control communication terminal device, and communication terminal device

In a communication control method for a communication terminal device including a plurality of communication units corresponding to different communication schemes or communication systems to perform communication in parallel, when a first communication unit performs transmission, transmission/reception of another communication unit is stopped. Then, a transmission/reception stop duration of the... Hitachi Kokusai Electric Inc

09/21/17 / #20170268105

Semiconductor device manufacturing method, substrate processing apparatus and recording medium

A substrate processing apparatus includes: a reaction tube with a process chamber defined therein, the process chamber being configured to process a substrate; a heating device configured to heat the process chamber; a gas supply part configured to supply a process gas used in processing the substrate; and a plasma... Hitachi Kokusai Electric Inc

09/21/17 / #20170270975

Video recording apparatus and video recording method

A video recording apparatus includes a recording device having a location information area and a video data area. The location information area stores location information of video data stored in the video data area. The video data area stores the video data in units of blocks with a size of... Hitachi Kokusai Electric Inc

09/21/17 / #20170271144

Method of manufacturing semiconductor device, substrate processing apparatus and recording medium

A method of manufacturing a semiconductor device, includes forming a film on a substrate by performing a cycle a predetermined number of times. The cycle includes non-simultaneously performing (a) supplying a precursor containing a first element to the substrate, (b) supplying a plasma-excited nitrogen gas to the substrate after the... Hitachi Kokusai Electric Inc

09/21/17 / #20170271176

Substrate processing apparatus

Cleaning processing of each of the inside of a shower head and the inside of a processing space can be sufficiently or appropriately performed even when gas supply is performed via the shower head. A substrate processing apparatus includes a processing space for processing a substrate, a shower head buffer... Hitachi Kokusai Electric Inc

09/14/17 / #20170260626

Cleaning method and manufacturing semiconductor device

A technique for improving cleaning efficiency after a film forming process is performed is provided. Provided is a method of cleaning a processing chamber after a formation of a film on a substrate, the method including: (a) supplying a gas containing hydrogen and fluorine into the processing chamber heated to... Hitachi Kokusai Electric Inc

09/14/17 / #20170263439

Method of manufacturing semiconductor device, substrate processing apparatus and recording medium

The present disclosure provides a technique including a method of manufacturing a semiconductor device, which is capable of improving the characteristics of a film formed on a substrate. The method of manufacturing a semiconductor device may include: (a) forming a first film containing a predetermined element, oxygen, carbon and nitrogen... Hitachi Kokusai Electric Inc

09/14/17 / #20170263441

Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium

There is provided a method of manufacturing a semiconductor device, including forming a seed layer on a substrate by performing a cycle a predetermined number of times, the cycle including supplying a halogen-based first processing gas to the substrate; supplying a non-halogen-based second processing gas to the substrate; and supplying... Hitachi Kokusai Electric Inc

09/07/17 / #20170253968

Substrate processing apparatus

Described herein is a technique that can improve a quality of substrate processing. A substrate processing apparatus may include: a plurality of processing chambers; a vacuum transfer chamber; a plurality of transfer chambers; a plurality of gate valves; a plurality of first gas supply units configured to supply an inert... Hitachi Kokusai Electric Inc

08/24/17 / #20170243764

Substrate processing apparatus

A substrate processing apparatus, including: a process chamber configured to process substrates; a substrate mounting stand installed in the process chamber and configured to support the substrates along a circumferential direction; a rotating unit configured to rotate the substrate mounting stand; a first gas supply unit configured to supply a... Hitachi Kokusai Electric Inc

08/17/17 / #20170232457

Substrate processing apparatus and precursor gas nozzle

A substrate processing apparatus includes: a process chamber accommodating substrates; a heating system for heating the process chamber to a predetermined temperature; a precursor gas supply system including a precursor gas nozzle and for supplying a precursor gas from the precursor gas nozzle to the process chamber; a reaction gas... Hitachi Kokusai Electric Inc

08/03/17 / #20170218513

Substrate processing apparatus

A substrate processing apparatus includes a transfer chamber; an upper gas supply mechanism for supplying a gas into an upper region of the transfer chamber through a first gas supply port; and a lower gas supply mechanism configured to supply the gas into a lower region of the transfer chamber... Hitachi Kokusai Electric Inc

08/03/17 / #20170221698

Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium

A semiconductor device manufacturing method includes forming a film having a desired composition on a substrate by selectively performing at least one of: performing, n1 times, a cycle including processes of sequentially supplying a first precursor gas, a nitriding gas and an oxidizing gas to the substrate; performing, n2 times,... Hitachi Kokusai Electric Inc

08/03/17 / #20170221699

Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium

There is provided a method of manufacturing a semiconductor device, which includes: forming a seed layer doped with a dopant on a substrate by performing a cycle a predetermined number of times, the cycle including: supplying a halogen-based first process gas to the substrate, supplying a non-halogen-based second process gas... Hitachi Kokusai Electric Inc

08/03/17 / #20170221738

Substrate processing apparatus

A substrate processing apparatus includes a first reaction chamber including: a first heating unit, a first processing space, and a first transfer space disposed under the first processing space, a second reaction chamber including: a second heating unit, a second processing space, and a second transfer space disposed under the... Hitachi Kokusai Electric Inc

Patent Packs
08/03/17 / #20170222972

Ip communication system, ip address setting unit, and ip address setting method

An IP communication system has a switching hub having at least first to (n+1)-th ports (where n is an integer equal to or greater than two); first to n-th IP devices connected to the respective first to n-th ports; and an IP address setting unit connected to the (n+1)-th port.... Hitachi Kokusai Electric Inc

07/27/17 / #20170213727

Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium

A method of manufacturing a semiconductor device includes alternately performing supplying a first process gas containing silicon and a halogen element to a substrate having a surface on which monocrystalline silicon and an insulation film are exposed and supplying a second process gas containing silicon and not containing a halogen... Hitachi Kokusai Electric Inc

07/13/17 / #20170198391

Substrate processing apparatus

A technique for performing high-temperature substrate processing includes a plurality of chambers where substrates are processed, wherein the chambers are disposed adjacent to one another; a gas supply unit configured to alternately supply first and second gasses to each of the chambers; a first exhaust pipe installed in each of... Hitachi Kokusai Electric Inc

07/13/17 / #20170198397

Substrate processing apparatus

A technique for improving stability and safety at the time of boat transfer is provided. A reaction tube configured to process a substrate, a seal cap, provided on an upper surface thereof with a substrate retainer for retaining the substrate, configured to close a furnace opening of the reaction tube,... Hitachi Kokusai Electric Inc

07/13/17 / #20170200599

Method of manufacturing semiconductor device and substrate processing forming film including at least two different elements

Provided is a technique of forming a film on a substrate by performing a cycle a predetermined number of times. The cycle includes: forming a first layer by supplying a gas containing a first element to the substrate, wherein the first layer is a discontinuous layer, a continuous layer, or... Hitachi Kokusai Electric Inc

07/06/17 / #20170193243

Processing apparatus, controller and processing system

Described herein is a technique that may prevent unauthorized personnel from editing files without permission. A processing apparatus may include: an operating unit configured to display an operation screen for editing an integrated file containing: non-encrypted data corresponding to an item file; a drawing file; and encrypted data obtained by... Hitachi Kokusai Electric Inc

07/06/17 / #20170194135

Method of manufacturing semiconductor device, and recording medium

A method of manufacturing a semiconductor device includes providing a substrate processing apparatus including a substrate processing chamber having a plasma generation space and a substrate processing space, a coil provided on the plasma generation space and having an electrical length equal to an integer multiple of a wavelength of... Hitachi Kokusai Electric Inc

07/06/17 / #20170195144

Reception apparatus

When a channel between a transmission apparatus and a reception apparatus is distorted by multipath fading or other reasons, linear interpolation between pilot subcarriers produces a large estimation error, resulting in an increase in an equalization error and a decrease in reception performance. The present invention allows feedback of a... Hitachi Kokusai Electric Inc

07/06/17 / #20170195556

Monitoring system and camera device

In a monitoring system, each individual camera device divides image data acquired by an image sensor unit into a plurality of areas, and detects video-image abnormality from an average luminance signal value in each area or from a change thereof. The camera device that has detected video abnormality transmits video-image... Hitachi Kokusai Electric Inc

07/06/17 / #20170195789

Loudspeaker device and wireless communication system

The present invention provides monitoring a sounding state of a speaker even in a case where any given sound is broadcast. In detecting the sounding state of the speaker with the microphone for sound detection, noises around the speaker are also collected by the microphone for sound detection. Therefore, in... Hitachi Kokusai Electric Inc

07/06/17 / #20170192229

Solid-state imaging device and imaging method

An imaging device is implemented that corrects contour distortion of the telephoto and wide-angle ends of zoom lens and a reflex lens where the way the contour is distorted significantly differs between the centerward and receding directions. A UHDTV imaging device with a landscape aspect ratio such as 16:9 uses... Hitachi Kokusai Electric Inc

06/29/17 / #20170183770

Substrate processing apparatus

There is provided a substrate processing apparatus including a first exhaust system which is connected to a first pump and a second pump of a type different from the first pump and is configured to exhaust the interior of a process chamber, a second exhaust system which is connected to... Hitachi Kokusai Electric Inc

06/29/17 / #20170183775

Substrate processing apparatus

The present disclosure provides a substrate processing apparatus capable of preventing a heating process from having adverse effects on an operation of supplying gas, even though a shower head is used to supply gas onto a substrate. The substrate processing apparatus includes: a process module having a process chamber where... Hitachi Kokusai Electric Inc

06/29/17 / #20170186604

Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium

A method of manufacturing a semiconductor device includes forming a seed layer on a substrate by alternately performing supplying a halogen-based first process gas to the substrate and supplying a non-halogen-based second process gas to the substrate, and forming a film on the seed layer by supplying a third process... Hitachi Kokusai Electric Inc

06/29/17 / #20170186634

Substrate processing apparatus

A substrate processing apparatus, including: a process chamber configured to process a substrate, a transfer chamber adjoining the process chamber, a shaft installed in the transfer chamber, a substrate mounting stand connected to the shaft and including a heating part, a first thermal insulation part installed in a wall of... Hitachi Kokusai Electric Inc

06/29/17 / #20170187434

Wireless transmission system and reception device

An object of the present invention is to generate a soft estimation value where missing of bit information is avoided and to implement turbo equalization processing in a wireless transmission apparatus and a wireless transmission system where termination processing is not performed in an error correction coding part and interleave... Hitachi Kokusai Electric Inc

06/22/17 / #20170178889

Method of manufacturing semiconductor device

A method of manufacturing a semiconductor device may include: performing a cycle a predetermined number of times to form an oxynitride film on a substrate, the cycle including: (a) supplying a source gas to the substrate via a first nozzle; and (b) supplying a nitriding gas and an oxidizing gas... Hitachi Kokusai Electric Inc

06/22/17 / #20170178902

Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium

A method of manufacturing a semiconductor device includes: providing a substrate having an oxide film; performing, a predetermined number of times, a cycle of non-simultaneously performing supplying a precursor gas to the substrate, supplying a carbon-containing gas to the substrate, and supplying a nitrogen-containing gas to the substrate, or performing,... Hitachi Kokusai Electric Inc

06/15/17 / #20170170004

Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium

There is provided a method of manufacturing a semiconductor device, including forming a film on a substrate by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing supplying a precursor gas to the substrate; and supplying a first oxygen-containing gas to the substrate. Further, the act... Hitachi Kokusai Electric Inc

06/15/17 / #20170171480

Image processing method

There is disclosed an image processing method in which a video signal is inputted from an imaging optical system in which astigmatism remains, and is displayed on a two-dimensional display apparatus. Based on the circumferential direction modulation factor and radial direction modulation factor of a lens used in the imaging... Hitachi Kokusai Electric Inc

06/08/17 / #20170159181

Substrate processing apparatus

A substrate processing apparatus includes a substrate support part provided with a first heating part, configured to heat a substrate, a gas supply part installed above the substrate support part and configured to supply a process gas to the substrate, a first exhaust port configured to exhaust an atmosphere of... Hitachi Kokusai Electric Inc

06/08/17 / #20170160201

Examination device and examination method

An examination device implements examination of matter to a large object without moving the device as a whole. The intensity of Raman scattering light obtained by laser irradiation of the object to be examined is detected to detect an attached state of an attached matter on the object to be... Hitachi Kokusai Electric Inc

06/08/17 / #20170162386

Method of manufacturing semiconductor device

A method of manufacturing a semiconductor device includes: forming a base film containing a first element and carbon on a substrate by supplying a film forming gas to the substrate; and oxidizing the base film by supplying an oxidizing gas to the substrate to modify the base film into a... Hitachi Kokusai Electric Inc

06/08/17 / #20170163379

Wireless communication device and method

SISO decoding of a reception signal having a scrambled symbol arrangement is realized using a process having reduced complexity. Coordinates are generated for a reference point obtained by scrambling and mapping a symbol number not a symbol reference point position. This reference point simulates transmission-side scrambling and is generated for... Hitachi Kokusai Electric Inc








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