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Hitachi Power Semiconductor Device Ltd patents


Recent patent applications related to Hitachi Power Semiconductor Device Ltd. Hitachi Power Semiconductor Device Ltd is listed as an Agent/Assignee. Note: Hitachi Power Semiconductor Device Ltd may have other listings under different names/spellings. We're not affiliated with Hitachi Power Semiconductor Device Ltd, we're just tracking patents.

ARCHIVE: New 2018 2017 2016 2015 2014 2013 2012 2011 2010 2009 | Company Directory "H" | Hitachi Power Semiconductor Device Ltd-related inventors


Diode and power convertor using the same

A diode includes an anode electrode layer; a cathode electrode layer; a buffer layer of a first conductivity type formed between the anode electrode layer and the cathode electrode layer in a region extending to a location at a distance of 30 μm or more from the cathode electrode layer;... Hitachi Power Semiconductor Device Ltd

Semiconductor device, and alternator and power converter using the semiconductor device

Provided is a semiconductor device including: a first external electrode which includes a circular outer peripheral portion; a MOSFET chip; a control circuit chip which receives voltages of a drain electrode and a source electrode of the MOSFET and supplies a signal to a gate electrode to control the MOSFET... Hitachi Power Semiconductor Device Ltd

Semiconductor device and alternator using same

Provided are a semiconductor device realized easily at low cost without requiring a complicated manufacturing process, and an alternator using the same. The semiconductor device includes a base having a base seat, a lead having a lead header, and an electronic circuit body, wherein the electronic circuit body is arranged... Hitachi Power Semiconductor Device Ltd

Rectifier, alternator using same and power supply using same

The rectifier includes a rectification MOSFET; a comparator having the non-inverted input terminal connected to a drain of the rectification MOSFET and the inverted input terminal connected to a source of the rectification MOSFET, and the control circuit controlling ON and OFF of the rectification MOSFET by an output of... Hitachi Power Semiconductor Device Ltd

Semiconductor device

A highly reliable semiconductor device with high withstand voltage is provided. As means therefor, an impurity concentration in a first JTE region is set to 4.4×1017 cm−3 or higher and 6×1017 cm−3 or lower and an impurity concentration in a second JTE region is set to 2×1017 cm−3 or lower... Hitachi Power Semiconductor Device Ltd








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This listing is an abstract for educational and research purposes is only meant as a recent sample of applications filed, not a comprehensive history. Freshpatents.com is not affiliated or associated with Hitachi Power Semiconductor Device Ltd in any way and there may be associated servicemarks. This data is also published to the public by the USPTO and available for free on their website. Note that there may be alternative spellings for Hitachi Power Semiconductor Device Ltd with additional patents listed. Browse our Agent directory for other possible listings. Page by FreshPatents.com

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