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Ii vi Incorporated patents

Recent patent applications related to Ii vi Incorporated. Ii vi Incorporated is listed as an Agent/Assignee. Note: Ii vi Incorporated may have other listings under different names/spellings. We're not affiliated with Ii vi Incorporated, we're just tracking patents.

ARCHIVE: New 2017 2016 2015 2014 2013 2012 2011 2010 2009 | Company Directory "I" | Ii vi Incorporated-related inventors




Date Ii vi Incorporated patents (updated weekly) - BOOKMARK this page
09/14/17Substrate comprising a layer of silicon and a layer of diamond having an optically finished (or a dense) silicon-diamond interface
09/07/17Method of efficient coaxial delivery of microwaves into a mode stabilized resonating chamber for the purpose of deposition of microwave plasma cvd polycrystalline diamond films
08/03/17Monolithic two-dimensional optical fiber array
06/29/17Optical channel monitor with integral optical switch
06/08/17Method and determining optical fibre characteristics
03/23/17Method of preparing and application of carbon selenium composites
03/16/17Micro splice protector
01/05/17Optical channel monitor with integral optical switch
12/22/16Electronic device housing utilizing a metal matrix composite
11/17/16Optically-finished thin diamond substrate or window of high aspect ratio and a production thereof
09/22/16Flexible structured optical modules
09/22/16Compact optical fiber amplifier
09/22/16Optical amplifier module
08/25/16Electrode configuration for electro-optic modulators
08/18/16Densely-spaced laser diode configurations
08/11/16Composite substrate with alternating pattern of diamond and metal or metal alloy
07/07/16Rare earth-doped fiber amplifier with integral optical metrology functionality
06/23/16Apparatus and manufacturing free standing cvd polycrystalline diamond films
05/12/16Highly twinned, oriented polycrystalline diamond film and manufacture thereof
04/07/16Axial gradient transport (agt) growth process and apparatus utilizing resistive heating
03/03/16Silicon carbide crystal growth by silicon chemical vapor transport
02/04/16Edge propagating optical time domain reflectometer and using the same
01/28/16Dual-ganged optical switch
10/29/15Multiport tunable optical filters
10/29/15Method and depolarizing light
09/10/15In-service optical time domain reflectometry utilizing raman pump source
08/06/15Substrate including a diamond layer and a composite layer of diamond and silicon carbide, and, optionally, silicon
08/06/15Beam combiner and a combiner depolariser
07/02/15Method and determining optical fibre characteristics
01/08/15Multiport tunable optical filters
09/18/143d direct write patterning apparatus and generating patterns on doubly-curved surfaces
09/18/14Double-sided polishing of hard substrate materials
08/21/14Vanadium doped sic single crystals and method thereof
11/21/13" synthesizing ultrahigh-purity silicon carbide"
11/15/12Sublimation growth of sic single crystals
09/06/12Halosilane assisted pvt growth of sic
05/03/12Sic single crystal sublimation growth method and apparatus
12/15/11Sic crystals having spatially uniform doping impurities
06/09/11Annealing of semi-insulating cdznte crystals
07/22/10Fabrication of sic substrates with low warp and bow
03/11/10Guided diameter sic sublimation growth with multi-layer growth guide
02/11/10Sic single crystals with reduced dislocation density grown by step-wise periodic perturbation technique
01/28/10System for forming sic crystals having spatially uniform doping impurities
09/03/09Method for synthesizing ultrahigh-purity silicon carbide
07/02/09Intra-cavity gettering of nitrogen in sic crystal growth
03/12/09Cdznte device using constrained design for high-flux x-ray spectroscopic imaging applications







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