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Imec Vzw patents


Recent patent applications related to Imec Vzw. Imec Vzw is listed as an Agent/Assignee. Note: Imec Vzw may have other listings under different names/spellings. We're not affiliated with Imec Vzw, we're just tracking patents.

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Method of forming micro-pipes on a substrate and a structure formed thereof

A method for producing a structure including, on a main surface of a substrate, at least one elongated cavity having openings at opposing ends. The method includes providing a substrate having a main surface. On the main surface, a first pair of features are formed that protrude perpendicularly from the... Imec Vzw

Lens-free imaging

Embodiments described herein relate to lens-free imaging. One example embodiment may include a lens-free imaging device for imaging a moving sample. The lens-free imaging device may include a radiation source configured to emit a set of at least two different wavelengths towards the moving sample. The lens-free imaging device is... Imec Vzw

Hardware implementation of a temporal memory system

A hardware implementation of a temporal memory system is disclosed. One aspect includes at least one array of memory cells logically organized in rows and columns, wherein each of the memory cells is adapted for storing a scalar value and adapted for changing the stored scalar value. The hardware implementation... Imec Vzw

Method for performing a wet treatment of a substrate

A method for performing a wet treatment of a structure is described in the present disclosure. An example method includes obtaining a structure comprising a first surface, wherein the first surfaces comprises a feature fixed at least at a first end to the first surface from which it protrudes, and... Imec Vzw

Formation of a transition metal nitride

A use of an amine-containing silane for forming a transition metal nitride is provided. In this use, the amine of the amine-containing silane is the source of at least some, preferably most and most preferably all of the nitrogen present in the transition metal nitride.... Imec Vzw

Method and control system for controlling provisioning of a service in a network

The disclosure relates to a computer-implemented method and control system for controlling provisioning of a service in a network. A network function specification data structure of a network function of the service is obtained, wherein the network function specification data structure is associated with at least a first network function... Imec Vzw

Optical coupling of embedded optical fibers

An optical system and method for connecting two optical fibers is described in the present disclosure. An example optical system includes a first optical fiber embedded in an embedding material, the first optical fiber comprising side walls extending in a longitudinal direction in contact with the embedding material, a second,... Imec Vzw

Power control in integrated circuits

An integrated circuit device comprising a power control unit for controlling the power of a power isle is disclosed. The power control unit comprises (i) a power gating switch implemented in the BEOL portion for switching ON/OFF the power to the power isle, (ii) a state recovery circuit comprising a... Imec Vzw

Monolithic integration of semiconductor materials

A method for forming a semiconductor structure by bonding a donor substrate to a carrier substrate is disclosed herein. The donor substrate may include a plurality of semiconductor layers epitaxially grown on top of one another in, and optionally above, a trench of the donor substrate. The carrier substrate may... Imec Vzw

Method and a device for acquiring an image having two-dimensional spatial resolution and spectral resolution

The present disclosure relates to devices and methods for acquiring an image having two-dimensional spatial resolution and spectral resolution. An example method comprises: acquiring a frame using rows of photo-sensitive areas on a sensor surface detecting incident light from an object imaged by an optical system onto an image plane,... Imec Vzw

Large area lens-free imaging device

Embodiments described herein relate to a large area lens-free imaging device. One example is a lens-free device for imaging one or more objects. The lens-free device includes a light source positioned for illuminating at least one object. The lens-free device also includes a detector positioned for recording interference patterns of... Imec Vzw

Breakdown-based physical unclonable function

A device and a method for implementing a physically unclonable function is disclosed. In one aspect, the device includes at least one electronic structure including a dielectric. A conductive path is formed at a random position through the dielectric due to an electrical breakdown of the dielectric, or the electronic... Imec Vzw

Polar transmitter and generating a transmit signal using a polar transmitter

A polar transmitter provided for transmitting a phase/frequency modulated and amplitude modulated transmit signal and a method for generating a transmit signal using a polar transmitter are described. An example polar transmitter comprises a phase locked loop for generating a phase/frequency modulated precursor of the transmit signal. The phase locked... Imec Vzw

Binding smart objects

A method for binding a first and second devices is disclosed. The method is implemented using the architectural principles of REST, which allows a binding initiator to directly contact the first device and instruct the device of actions to be taken. Specifically, the binding initiator may contact the first device... Imec Vzw

Thermoplastic optical device

The present disclosure describes optical devices and methods for manufacturing such optical devices. Namely, an example optical device includes a first optical transparent thermoplastic layer, a second optical transparent thermoplastic layer, and in between both thermoplastic layers, a diffractive optical element adjacent to one thermoplastic layer, a spacer in between... Imec Vzw

Semiconductor device with stacked layout

The disclosed technology generally relates to semiconductor devices, and more particularly to semiconductor devices having a stacked arrangement, and further relates to methods of fabricating such devices. In one aspect, a semiconductor device comprises a first memory device and a second memory device formed over a substrate and at least... Imec Vzw

Resistive switching memory cell

The disclosed technology generally relates to semiconductor devices and more particularly to memory or storage devices based on resistive switching, and to methods of making and using such devices. In one aspect, a resistive switching memory device includes a first electrode and a second electrode having interposed therebetween a first... Imec Vzw

Device and performing lens-free imaging

Embodiments described herein relate to an imaging device, a method for imaging an object, and a photonic integrated circuit. The imaging device includes at least one photonic integrated circuit. The photonic integrated circuit includes an integrated waveguide for guiding a light signal. The photonic integrated circuit also includes a light... Imec Vzw

Light coupler

Embodiments described herein relate to a light coupler, a photonic integrated circuit, and a method for manufacturing a light coupler. The light coupler is for optically coupling to an integrated waveguide and for out-coupling a light signal propagating in the integrated waveguide into free space. The light coupler includes a... Imec Vzw

Method for forming a vertical hetero-stack and a device including a vertical hetero-stack

Embodiments described herein include a method for forming a vertical hetero-stack and a device including a vertical hetero-stack. An example method is used to form a vertical hetero-stack of a first nanostructure and a second nanostructure arranged on an upper surface of the first nanostructure. The first nanostructure is formed... Imec Vzw

Microbubble generator device, systems and method to fabricate

The present disclosure relates to microbubble generator devices for deflecting objects in a liquid, systems for sorting objects that utilize such devices, and methods for fabricating such devices. At least one embodiment relates to a micro-fluidic device for deflecting objects in a liquid. The device includes a substrate for providing... Imec Vzw

Rare-earth metal oxide resistive random access non-volatile memory device

A Resistive Random Access Memory (RRAM) device and a method of its manufacture are disclosed. The RRAM device comprises a lower oxygen affinity bottom electrode, a hygroscopic solid-state dielectric layer, comprising hydroxyl groups, and a higher oxygen affinity top electrode. In some embodiments, the hygroscopic solid-state dielectric layer is a... Imec Vzw

Tunable magnonic crystal device and filtering method

The present disclosure relates to a tunable magnonic crystal device comprising a spin wave waveguide, a magnonic crystal structure in or on the spin wave waveguide, and a magneto-electric cell operably connected to the magnonic crystal structure. The magnonic crystal structure is adapted for selectively filtering a spin wave spectral... Imec Vzw

Dtc-based pll and operating the dtc-based pll

The disclosure provides a phase locked loop, PLL, for phase locking an output signal to a reference signal. The PLL comprises a reference path providing the reference signal to a first input of a phase detector, a feedback loop providing the output signal of the PLL as a feedback signal... Imec Vzw

Method for controlling on-demand service provisioning

The disclosure relates to a computer-implemented method for controlling on-demand service provisioning in a network, wherein the network comprises resources for providing a service. In the method, a service request is intercepted. At least one network function, indicated as a first network function, required for the service associated with the... Imec Vzw

Device and controlling acquisition of a signal and a system for acquisition of a signal

Devices, systems, and methods for controlling acquisition of a signal representing a physiological measurement are described herein. An example device comprises: an input for receiving the signal in digital form, wherein the signal has been acquired by means of at least one electrode without galvanic contact between the electrode and... Imec Vzw

Compact glass-based fluid analysis device and method to fabricate

The present disclosure relates to devices and methods for analyzing a fluid sample. An example device comprises a fluidic substrate comprising a micro-fluidic component embedded therein, for propagating a fluid sample; a needle or inlet for providing the fluid sample which is fluidically connected to the micro-fluidic component; a lid... Imec Vzw

Fluid analysis device

The present disclosure relates to a fluid analysis device which comprises a sensing device for analyzing a fluid sample, the sensing device comprising a micro-fluidic component for propagating the fluid sample and a microchip configured for sensing the fluid sample in the micro-fluidic component; a sealed fluid compartment containing a... Imec Vzw

Compact fluid analysis device and method to fabricate

The present disclosure relates to a fluid analyzing device that includes a sensing device for analyzing a fluid sample. The sensing device includes a microchip configured for sensing the fluid sample, and a closed micro-fluidic component for propagating the fluid sample to the microchip. The fluid sample can be provided... Imec Vzw

Magnetometer sensor with negatively charged nitrogen-vacancy centers in diamond

The disclosure relates to a magnetometer sensor with negatively charged nitrogen-vacancy centers in diamond. One example embodiment is a magnetometer sensor. The magnetometer sensor includes a diamond crystal with one or more negatively charged nitrogen-vacancy centers. The magnetometer sensor also includes one or more light sources. Further, the magnetometer sensor... Imec Vzw

Method for manufacturing pillar or hole structures in a layer of a semiconductor device, and associated semiconductor structure

The present disclosure relates to a method for manufacturing pillar or hole structures in a layer of semiconductor device, and associated semiconductor structure. At least one embodiment relates to a method for manufacturing pillar structures in a layer of a semiconductor device. The pillar structures are arranged at positions forming... Imec Vzw

Method of forming gate of semiconductor device and semiconductor device having same

The disclosed technology generally relates to semiconductor devices and more particularly to a gate structure for a semiconductor device, and to methods of forming the same. In an aspect a method for forming a gate structure includes forming a first set of one or more semiconductor features and a second... Imec Vzw

Autofocus system and method in digital holography

At least one embodiment relates to an autofocus method for determining a focal plane for at least one object. The method includes reconstructing a holographic image of the at least one object such as to provide a reconstructed image at a plurality of different focal depths. The reconstructed image includes... Imec Vzw

Multiple input multiple output radar system

The present disclosure relates to a method for cancelling spillover in a MIMO radar system. The method comprises (i) transmitting and receiving a signal in a transmit-receive pair, the received signal including a spillover signal; (ii) routing a part of the transmitted signal of the transmit-receive pair to the received... Imec Vzw

Magnetic memory having multiple gates and operating same

The disclosed technology generally relates to magnetic memory and more particularly to voltage-controlled magnetic memory, and to methods of using same. In one aspect, a magnetic memory comprises a first magnetic stack including a first gate dielectric layer formed between a first gate electrode and a first free ferromagnetic layer.... Imec Vzw

10/19/17 / #20170301542

Combined anneal and selective deposition process

A method for forming a film with an annealing step and a deposition step is disclosed. The method comprises an annealing step for inducing self-assembly or alignment within a polymer. The method also comprises a selective deposition step in order to enable selective deposition on a polymer.... Imec Vzw

10/19/17 / #20170301583

Method for producing an integrated circuit including a metallization layer comprising low k dielectric material

A method of forming a metallization layer of an IC having a lower via level and an upper trench level is disclosed. In one aspect, the method includes applying a dual damascene process to a stack of two layers. The bottom layer includes a porous low-k dielectric in which the... Imec Vzw

10/19/17 / #20170301646

Method of bonding semiconductor substrates

The disclosed technology generally relates to semiconductor wafer bonding, and more particularly to direct bonding by contacting surfaces of the semiconductor wafers. In one aspect, a method for bonding a first semiconductor substrate to a second semiconductor substrate by direct bonding is described. The substrates are both provided on their... Imec Vzw

10/19/17 / #20170302280

Spin torque majority gate device

The disclosed technology generally relates to magnetic devices and more particularly to spin torque majority gate devices, and to methods of operating such devices. In one aspect, a majority gate device comprises a free ferromagnetic layer comprising 3N input zones and an output zone. The output zone has a polygon... Imec Vzw

10/12/17 / #20170294448

Integrated circuit power distribution network

An integrated circuit (IC) power distribution network is disclosed. In one aspect, the IC includes a stack of layers formed on a substrate. The IC includes standard cells with parallel gate structures oriented in a direction y. Each cell includes an internal power pin for supplying a reference voltage to... Imec Vzw

09/28/17 / #20170276841

Wavelength-controlled directivity of all-dielectric optical nano-antennas

The disclosure relates to wavelength-controlled directivity of all-dielectric optical nano-antennas. One example embodiment is an optical nanoantenna for directionally scattering light in a visible or a near-infrared spectral range. The optical nanoantenna includes a substrate. The optical nanoantenna also includes an antenna structure disposed on the substrate. The antenna structure... Imec Vzw

09/28/17 / #20170278752

Self-aligned gate contact

The disclosed technology generally relates to semiconductor devices, and more specifically to electrical contacts to a transistor device, and a method of making such electrical contacts. In one aspect, a method of forming one or more self-aligned gate contacts in a semiconductor device includes providing a substrate having formed thereon... Imec Vzw

09/21/17 / #20170270388

System and cell recognition

The present disclosure relates to systems and methods for cell recognition. At least one embodiment relates to a method for recognizing cell. The method includes receiving an image of the cell. The method also includes performing edge detection on the image of the cell. Further, the method includes detecting ridges... Imec Vzw

09/21/17 / #20170271002

Resistance change memory device configured for state evaluation based on reference cells

The disclosed technology generally relates to memory devices and more particularly to memory devices based on resistance change, and to systems and methods for evaluating states of memory cells of the memory devices. In one aspect, a memory device includes a plurality of memory cells arranged in an array, where... Imec Vzw

09/21/17 / #20170271649

Method for the fabrication of a thin-film solid-state battery with ni(oh)2 electrode, battery cell, and battery

The disclosure relates to a method for the fabrication of a thin-film solid-state battery with Ni(OH)2 electrode, battery cell, and battery. One example embodiment is a method for fabricating a thin-film solid-state battery cell on a substrate comprising a first current collector layer. The method includes depositing above the first... Imec Vzw

09/14/17 / #20170263700

Iii-nitride based semiconductor device with low vulnerability to dispersion and backgating effects

The present disclosure is related to a III-Nitride semiconductor device comprising a base substrate, a buffer layer, a channel layer, a barrier layer so that a 2-dimensional charge carrier gas is formed or can be formed near the interface between the channel layer and the barrier layer, and at least... Imec Vzw

09/07/17 / #20170256451

Self-aligned interconnects

An interconnect structure and a method for forming it is disclosed. In one aspect, the method includes the steps of providing a first entity. The first entity includes a first set of line structures. The first set of line structures include a first set of conductive lines, and a first... Imec Vzw

08/31/17 / #20170250075

Method of producing transition metal dichalcogenide layer

Method of producing one or more transition metal dichalcogenide (MX2) layers on a substrate, comprising the steps of: obtaining a substrate having a surface and depositing MX2 on the surface using ALD deposition, starting from a metal halide precursor and a chalcogen source (H2X), at a deposition temperature of about... Imec Vzw

08/24/17 / #20170242335

Metal or ceramic material hardened pattern

wherein the first material comprises a metal or a ceramic material and wherein the guiding material and the filler material either both comprise or both do not comprise the metal or ceramic material.... Imec Vzw

08/17/17 / #20170236971

Method for forming thin film chalcogenide layers

The disclosed technology generally relates to chalcogenide thin films, and more particularly to ternary and quaternary chalcogenide thin films having a wide band-gap, and further relates to photovoltaic cells containing such thin films, e.g., as an absorber layer. In one aspect, a method of forming a ternary or quaternary thin... Imec Vzw

08/10/17 / #20170231089

Smart textile product and fabricating the same

The present disclosure relates to a smart textile product and a method for manufacturing a smart textile product. The smart textile product is provided with a flexible and/or stretchable textile fabric (10) comprising a plurality of electrically conductive threads (11, 12) and at least one rigid electronic or optoelectronic component... Imec Vzw

07/20/17 / #20170205578

Polarization independent processing in integrated photonics

A photonic integrated circuit comprises an input interface adapted for receiving an optical input signal and splitting it into two distinct polarization modes and furthermore adapted for rotating the polarization of one of the modes for providing the splitted signals in a common polarization mode. The PIC also comprises a... Imec Vzw

07/20/17 / #20170207217

Finfet having locally higher fin-to-fin pitch

The disclosed technology generally relates to semiconductor devices, and more particularly to FinFET transistors. In one aspect, at least three fins are arranged to extend in parallel in a first direction and are laterally separated from each other in a second direction by shallow trench isolation structures having a first... Imec Vzw

07/13/17 / #20170198393

Method of producing a thin metal-organic framework film using vapor phase precursors

A method of producing a metal-organic framework (MOF) film on a substrate is disclosed, the method comprising providing a substrate having a main surface and forming on said main surface a MOF film using an organometallic compound precursor and at least one organic ligand, wherein each of said organometallic compound... Imec Vzw

07/06/17 / #20170194283

Method for self-aligned solder reflow bonding and devices obtained thereof

A method for producing a stack of semiconductor devices and the stacked device obtained thereof are disclosed. In one aspect, the method includes providing a first semiconductor device comprising a dielectric layer with a hole, the hole lined with a metal layer and partially filled with solder material. The method... Imec Vzw

07/06/17 / #20170194487

High voltage tolerant ldmos

An LDMOS device in FinFET technology is disclosed. In one aspect, the device includes a first region substantially surrounded by a second region of different polarity. The device further includes a first fin in the first region, extending into the second region, the first fin including a doped source region... Imec Vzw

07/06/17 / #20170195586

User device

A user device including a camera, a spectrometer module, and a processing unit is disclosed. In one aspect, the camera is adapted to acquire at least one image of a scenery which falls within a field of view of the camera. The spectrometer module is adapted to acquire spectral information... Imec Vzw

07/06/17 / #20170196120

Liquid cooling of electronic devices

A liquid cooling system for cooling an electronic device comprising a chip or a chip package comprising a chip is described. The liquid cooling system comprises an inlet plenum comprising a coolant feeding channel oriented substantially parallel with the plane of a main surface to be cooled of the chip... Imec Vzw

06/29/17 / #20170184452

Spectrometer module

A spectrometer module comprising a plurality of separate electronic circuit modules is disclosed. Each separate electronic module comprises an integrated sensor circuit including a light sensitive area occupying part of an area of the integrated sensor circuit, the integrated sensor circuit being arranged to detect incident light. In one aspect,... Imec Vzw

06/29/17 / #20170186733

Method for aligning micro-electronic components

Alignment of a first micro-electronic component to a receiving surface of a second micro-electronic component is realized by a capillary force-induced self-alignment, combined with an electrostatic alignment. The latter is accomplished by providing at least one first electrical conductor line along the periphery of the first component, and at least... Imec Vzw

06/29/17 / #20170187510

Telecommunications device comprising an electrical balance duplexer and balancing the electrical balance duplexer

The present disclosure relates to a telecommunications device. The telecommunications device includes an electrical balance duplexer connected to an output node of a transmission path, an input node of a receive path, an antenna, and a tunable impedance. The electrical balance duplexer is configured to isolate the transmission path from... Imec Vzw

06/22/17 / #20170172425

Method for detecting at least one of a heart rate and a respiratory rate of a subject

A method for detecting at least one of a heart rate and a respiratory rate of a subject is disclosed. In one aspect, the method includes transmitting a radio frequency signal towards the subject and receiving a reflected signal from the subject, the reflected signal being Doppler-shifted due to at... Imec Vzw

06/22/17 / #20170172447

Sensor, system, and holder arrangement for biosignal activity measurement

The disclosure relates to a sensor, a system, and a holder arrangement for biosignal activity measurement. One example embodiment includes a sensor module for brain activity measurement. The sensor module includes a main electrode base. The sensor module also includes a plurality of pins protruding from the main electrode base.... Imec Vzw

06/22/17 / #20170172511

System and acquisition of biosignals with motion sensor-based artifact compensation

The disclosure relates to systems and methods for acquisition of biosignals with motion sensor-based artifact compensation. One example embodiment is a system for acquisition of biosignals from a subject. The system includes at least one biosensor worn over a first location of a body part of the subject configured for... Imec Vzw

06/22/17 / #20170178698

Memory cell

The present disclosure relates to a memory cell, a memory array, and methods for writing a memory cell. In an example embodiment, a memory cell comprises a first transistor, a second transistor, and a differential sense amplifier. The first transistor is a Vt-modifiable n-channel transistor and the second transistor is... Imec Vzw

Patent Packs
06/22/17 / #20170178712

Pinch-off ferroelectric memory

The disclosed technology relates generally to non-volatile memory devices, and more particularly to ferroelectric non-volatile memory devices. In one aspect, a non-volatile memory cell includes a pinch-off ferroelectric memory FET and at least one select device electrically connected in series to the pinch-off ferroelectric memory FET.... Imec Vzw

06/22/17 / #20170178905

Method of forming a feature of a target material on a substrate

forming the feature of the target material by a deposition process during which the feature of the sacrificial material is removed from the substrate by forming a volatile reaction product with a precursor of the deposition process, wherein the sacrificial material is replaced by the target material and the target... Imec Vzw

06/22/17 / #20170178910

Method for differential heating of elongate nano-scaled structures

The present disclosure is related to a method of fabricating a semiconductor device involving the production of at least two non-parallel nano-scaled structures on a substrate. These structures are heated to different temperatures by exposing them simultaneously to polarized light having a wavelength and polarization such that a difference in... Imec Vzw

06/22/17 / #20170178971

Method for manufacturing a si-based high-mobility cmos device with stacked channel layers, and resulting devices

A device and method for manufacturing a Si-based high-mobility CMOS device is provided. The method includes the steps of: (i) providing a silicon substrate having a first insulation layer on top and a trench into the silicon; (ii) manufacturing a III-V semiconductor channel layer above the first insulation layer by... Imec Vzw

06/22/17 / #20170179263

Two-dimensional material semiconductor device

A semiconductor device comprises a two-dimensional (2D) material layer, the 2D material layer comprising a channel region in between a source region and a drain region; a first gate stack and a second gate stack in contact with the 2D material layer, the first and second gate stack being spaced... Imec Vzw

06/22/17 / #20170179272

Method of fabricating an enhancement mode group iii-nitride hemt device and a group iii-nitride structure fabricated therefrom

The disclosure relates to a method of fabricating an enhancement mode Group III-nitride HEMT device and a Group III-nitride structure fabricated therefrom. One example embodiment is a method for fabricating an enhancement mode Group III-nitride HEMT device. The method includes providing a structure. The structure includes a substrate having a... Imec Vzw

06/22/17 / #20170179281

Self-aligned nanostructures for semiconductor devices

A method for forming a semiconductor device is disclosed. The method includes providing a semiconductor substrate. The method also includes epitaxially growing on the semiconductor substrate a first part of a III-V semiconductor nanostructure. The method further includes covering the first part of the III-V semiconductor nanostructure with a layer... Imec Vzw

06/22/17 / #20170179283

Multi-gate tunnel field-effect transistor (tfet)

A Tunnel Field-Effect Transistor (TFET) is provided comprising a source-channel-drain structure of a semiconducting material. The source-channel-drain structure comprises a source region being n-type or p-type doped, a drain region oppositely doped than the source region and an intrinsic or lowly doped channel region situated between the source region and... Imec Vzw

06/22/17 / #20170179337

Optical semiconductor device and making the device

An optical semiconductor device comprises, on a substrate, a fin of diamond-cubic semiconductor material and, at the base of the fin, a slab of that semiconductor material, in a diamond-hexagonal structure, that extends over the full width of the fin, the slab being configured as an optically active material. This... Imec Vzw

06/22/17 / #20170179373

Spin torque majority gate device

The disclosed technology relates generally to magnetic devices, and more particularly to spin torque majority gate devices such as spin torque magnetic devices (STMG), and to methods of fabricating the same. In one aspect, a majority gate device includes a plurality of input zones and an output zone. A magnetic... Imec Vzw

06/22/17 / #20170179378

Semiconductor device with integrated magnetic tunnel junction

The disclosed technology generally relates to semiconductor devices and more particularly to semiconductor devices having an integrated magnetic tunnel junction (MTJ), and relates to methods of fabricating the semiconductor devices. In one aspect, a semiconductor device includes a stack including successive layers of: a first metallization layer, a first dielectric... Imec Vzw

06/22/17 / #20170179891

Small signal amplifier

An amplifier circuit, a voltage sensing apparatus, and an amplification method are disclosed. The amplifier circuit comprises (1) an input stage comprising a first set of transistors to which an input signal to be amplified is applied, the transistors of the first set comprising a semiconductor body, and (2) a... Imec Vzw

06/22/17 / #20170179937

Delay control circuit

The present disclosure relates to a delay control circuit arranged for adding delay to a signal. The delay control circuit includes a driver circuit arranged to receive a first signal and to output a second signal. The driver circuit includes a variable load arranged for outputting the second signal by... Imec Vzw

06/22/17 / #20170179974

Circuit for stabilizing a digital-to-analog converter reference voltage

The disclosure relates to a circuit for stabilizing a digital-to-analog converter reference voltage. One example embodiment is a circuit for stabilizing a voltage on a reference node. The circuit includes a digital-to-analog converter that includes an array of capacitors and arranged for: receiving an input voltage via an input node,... Imec Vzw

06/22/17 / #20170179976

Circuit and converting analog signal to digital value representation

A circuit and a method for converting an analog signal to a digital value representation is disclosed. In one aspect, the circuit includes an incremental sigma-delta analog-to-digital converter (ADC). The circuit further includes a first input line for providing a primary analog signal representing a sensor measurement to the incremental... Imec Vzw

Patent Packs
06/15/17 / #20170167921

Spectral detector and image sensor including the same

A spectral detector includes a plurality of spectral detection units, each of the spectral detection units including an optical signal processor configured to deliver an optical signal incident to the spectral detection unit to an outside of the spectral detection unit, and a resonator configured to modulate a spectrum of... Imec Vzw

06/15/17 / #20170167992

Method for inspecting a pattern of features on a semiconductor die

The present disclosure is related to a method for detection of defects in a printed pattern of geometrical features on a semiconductor die, the pattern comprising an array of features having a nominal pitch, the method comprising determining deviations from the nominal pitch in the printed pattern, and comparing the... Imec Vzw

06/15/17 / #20170169873

Three transistor two junction magnetoresistive random-access memory (mram) bit cell

Three transistor two junction magnetoresistive random-access memory (MRAM) bit cells are disclosed. An example MRAM bit cell includes a first magnetic tunnel junction, MTJ, connected to a first bit line. The MRAM bit cell also includes a second MTJ connected to a second bit line. In addition, the MRAM bit... Imec Vzw

06/15/17 / #20170170007

Method for pattern formation on a substrate, associated semiconductor devices, and uses of the method

The present disclosure relates to a method for pattern formation on a substrate. An example embodiment includes a method for pattern formation. The method includes providing a photoresist layer on a composite substrate. The method also includes patterning the photoresist layer by lithography to define a plurality of parallel stripe... Imec Vzw

06/15/17 / #20170170017

Method for patterning a substrate involving directed self-assembly

A method for patterning a substrate is disclosed. The method includes applying a first directed self-assembly (DSA) patterning process that defines a first patterned layer on top of the substrate. The pattern of the first patterned layer is to be transferred into the substrate. The method also includes applying a... Imec Vzw

06/15/17 / #20170170289

Transistor device with reduced hot carrier injection effect

The disclosed technology generally relates to semiconductor devices, and more particularly to transistor devices such as metal-oxide-semiconductor (MOS) transistor devices. In one aspect, a transistor device comprises a channel region in a substrate partially delimited by a source and a drain junction at a main surface of the substrate. A... Imec Vzw

06/15/17 / #20170170313

Method of producing a pre-patterned structure for growing vertical nanostructures

A method of producing a pre-patterned structure comprising at least one cavity for growing a vertical nanostructure is disclosed. The method includes providing at least one protruding structure that extends upwardly from a main surface of a substrate. The at least one protruding structure has a main portion of a... Imec Vzw

06/15/17 / #20170170314

Drain extension region for tunnel fet

A Tunnel Field-Effect Transistor comprising a source-channel-drain structure, the source-channel-drain structure comprising a source region doped with a dopant element having a first dopant type and a first doping concentration; a drain region doped with a dopant element having a second dopant type opposite compared to the first dopant type,... Imec Vzw

06/15/17 / #20170170390

Magnetic memory device having buffer layer

The disclosed technology generally relates to magnetic memory devices, and more particularly to spin transfer torque magnetic random access memory (STT-MRAM) devices having a magnetic tunnel junction (MTJ), and further relates to methods of fabricating the STT-MRAM devices. In an aspect, a magnetoresistive random access memory (MRAM) device has a... Imec Vzw

06/08/17 / #20170162686

Field-effect transistor comprising germanium and manufacturing method thereof

The disclosed technology generally relates to semiconductor devices, and more particularly to transistors comprising germanium (Ge) in the channel, and to methods of manufacturing thereof. In one aspect, a field-effect transistor (FET) comprises an active region comprising germanium (Ge) and a gate stack formed on the active region. The gate... Imec Vzw

06/01/17 / #20170153143

Bragg grating, and spectroscopy device including the bragg grating

Provided are a Bragg grating and a spectroscopy device including the same. The Bragg grating is disposed at each of opposite ends of a resonator for reflecting light of a certain wavelength band and includes a core member extending from a waveguide of the resonator in a lengthwise direction of... Imec Vzw

05/25/17 / #20170145498

Arrays of optical devices comprising integrated bandpass filters and methods of production

Arrays of integrated optical devices and their methods for production are provided. The devices include an integrated bandpass filter layer that comprises at least two multi-cavity filter elements with different central bandpass wavelengths. The device arrays are useful in the analysis of highly multiplexed optical reactions in large numbers at... Imec Vzw

05/25/17 / #20170147210

Memory access unit

The disclosure relates to a memory access unit. One example embodiment is a memory access unit, for providing read-access to read an item from an arbitrary location in a physical memory, independently of addressable locations of the physical memory. The item includes a first number of bits and each addressable... Imec Vzw

05/25/17 / #20170148869

Integrated circuit comprising a metal-insulator-metal capacitor and fabrication method thereof

The disclosed technology relates to a metal-insulator-metal capacitor (MIMCAP) integrated as part of a back-end-of-line of an integrated circuit (IC). In one aspect, a MIMCAP comprises a first planar electrode having perforations formed therethrough, and a metal-insulator-metal (MIM) stack lining inner surfaces of cavities formed in the perforations and extending... Imec Vzw

05/18/17 / #20170141199

Method for forming a field effect transistor device having an electrical contact

A method for fabricating a semiconductor structure is provided. The method includes providing a patterned substrate comprising a semiconductor region and a dielectric region. A conformal layer of a first dielectric material is deposited directly on the patterned substrate. A layer of a sacrificial material is deposited overlying the conformal... Imec Vzw

05/04/17 / #20170121814

Apparatus and delivering a gaseous precursor to a reaction chamber

The disclosure relates to an apparatus and method for delivering a precursor to a reaction chamber. One example embodiment is an apparatus for delivering a precursor to a reaction chamber. The apparatus includes a recipient configured to hold a quantity of the precursor in a solid or liquid state at... Imec Vzw

05/04/17 / #20170125789

Methods for forming lithium manganese oxide layers

A method is provided for forming a porous, electrochemically active lithium manganese oxide layer on a substrate, the method comprising: depositing a porous manganese oxide layer on the substrate; providing a Li containing layer on the porous manganese oxide layer; and afterwards performing an annealing step at a temperature in... Imec Vzw

04/27/17 / #20170115201

Method and device for drug screening

The present disclosure relates to devices and methods configured to perform drug screening on cells. At least one embodiment relates to a lens-free device for performing drug screening on cells. The lens-free device includes a substrate having a surface. The lens-free device also includes a light source positioned to illuminate... Imec Vzw

04/13/17 / #20170100064

Device and non-invasive measuring of analytes

The present disclosure relates to devices and methods for non-invasive measuring of analytes. At least one embodiment relates to a wearable system for non-invasive measuring of a concentration of an analyte in skin tissue. The wearable system includes an integrated circuit that includes a first optical unit. The first optical... Imec Vzw

04/13/17 / #20170103889

Method for producing a pillar structure in a semiconductor layer

A method for producing a pillar structure in a semiconductor layer, the method including providing a structure including, on a main surface, a semiconductor layer. A patterned hard mask layer stack is provided on the semiconductor layer that includes a first layer in contact with the semiconductor layer and a... Imec Vzw

03/30/17 / #20170091094

Low-layer memory for a computing platform

The present disclosure relates to low-layer memory for a computing platform. An example embodiment includes a memory hierarchy being directly connectable to a processor. The memory hierarchy includes at least a level 1, referred to as L1, memory structure comprising a non-volatile memory unit as L1 data memory and a... Imec Vzw

03/30/17 / #20170092931

Conformal coating on three-dimensional substrates

The disclosure relates to a method for forming a conformal coating on a substrate having a topography presenting a relief. One method of the disclosure includes setting the temperature of the substrate within the range 140-275° C., and coating an aqueous solution including a sol-gel precursor on said substrate. The... Imec Vzw








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