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Infineon Technologies Ag patents


Recent patent applications related to Infineon Technologies Ag. Infineon Technologies Ag is listed as an Agent/Assignee. Note: Infineon Technologies Ag may have other listings under different names/spellings. We're not affiliated with Infineon Technologies Ag, we're just tracking patents.

ARCHIVE: New 2018 2017 2016 2015 2014 2013 2012 2011 2010 2009 | Company Directory "I" | Infineon Technologies Ag-related inventors


Method and device for processing radar signals

A method is suggested for processing radar signals in a processing stage, the method comprising: (i) determining FFT results at a first precision, and (ii) storing a first group of the FFT results at a second precision, wherein the second precision is lower than the first precision. Also, a device... Infineon Technologies Ag

Non-volatile memory testing

Devices, systems and methods are provided which comprise testing of a non-volatile memory concurrently during at least a part of a testing of other system parts by a processor (11).... Infineon Technologies Ag

Method of manufacturing a template wafer

A method for manufacturing a semiconductor device includes providing a carrier wafer; and forming a semiconductor device layer on the carrier wafer. After front side processing of the semiconductor device layer, the carrier wafer is removed by cutting along a plane which is parallel to the semiconductor device layer.... Infineon Technologies Ag

Metallization and its use in, in particular, an igbt or a diode

A vertical power semiconductor component includes a semiconductor chip, the semiconductor chip having a top main surface and a bottom main surface. Each of said top main surface and said bottom main surface is in a heat exchanging relationship with a top metallization layer and a bottom metallization each of... Infineon Technologies Ag

Hall effect device

A hall effect device includes an active Hall region in a semiconductor substrate, and at least four terminal structures, each terminal structure including a switchable supply contact element and a sense contact element, wherein each supply contact element includes a transistor element with a first transistor terminal, a second transistor... Infineon Technologies Ag

Apparatus for converting an electrical power of an electromagnetic wave into a dc electrical voltage signal

According to one embodiment, an apparatus for converting the electrical power of an electromagnetic wave into a DC electrical voltage signal is disclosed, the apparatus comprising a signal input region for receiving the electromagnetic wave, a signal output region for providing the DC electrical voltage signal, and a first conversion... Infineon Technologies Ag

Liquid-dispensing system, apparatus and method

A liquid-dispensing system includes at least one nozzle configured to dispense a liquid. The liquid-dispensing system includes at least one sensor module, configured to provide a sensor signal comprising information related to whether liquid is dispensed by the at least one nozzle. At least a part of the at least... Infineon Technologies Ag

Battery monitoring using a redundant neighbor measurement

In one example, a circuit includes a first integrated circuit and a second integrated circuit. The first integrated circuit is configured to detect a first battery voltage that is associated with a first battery cell and output a representation of the first battery voltage. The first integrated circuit is further... Infineon Technologies Ag

Safety hypervisor function

The disclosure relates to systems and methods for defining a processor safety privilege level for controlling a distributed memory access protection system. More specifically, a safety hypervisor function for accessing a bus in a computer processing system includes a module, such as a Computer Processing Unit (CPU) or a Direct... Infineon Technologies Ag

Devices with backside metal structures and methods of formation thereof

A method of fabricating a semiconductor device includes forming trenches filled with a sacrificial material. The trenches extend into a semiconductor substrate from a first side. An epitaxial layer is formed over the first side of the semiconductor substrate and the trenches. From a second side of the semiconductor substrate... Infineon Technologies Ag

Die attach methods and semiconductor devices manufactured based on such methods

A semiconductor device includes a carrier, a semiconductor die and a die attach material arranged between the carrier and the semiconductor die. A fillet height of the die attach material is less than about 95% of a height of the semiconductor die. A maximum extension of the die attach material... Infineon Technologies Ag

Package with partially encapsulated cooling channel for cooling an encapsulated chip

A power module which comprises a semiconductor chip, at least one cooling plate with at least one cooling channel thermally coupled to the semiconductor chip and being configured so that a coolant is guidable through the at least one cooling channel, and an encapsulant encapsulating at least part of the... Infineon Technologies Ag

Chip carrier and method thereof

A method may include providing a chip carrier having a chip supporting region to support a chip, and a chip contacting region having at least one contact pad, the chip carrier being thinner in the chip contacting region such that a first thickness of the chip carrier at the at... Infineon Technologies Ag

Semiconductor devices with steep junctions and methods of manufacturing thereof

Crystal lattice vacancies are generated in a pretreated section of a semiconductor layer directly adjoining a process surface. Dopants are implanted at least into the pretreated section. A melt section of the semiconductor layer is heated by irradiating the process surface with a laser beam activating the implanted dopants at... Infineon Technologies Ag

Indirect battery pressure measurement

Embodiments described herein relate to a battery cells and methods for measuring internal pressure in a battery cell. According to one embodiment, a battery cell includes an interior space, in which a battery electrolyte resides, and a housing that gas-tightly encloses the interior space. The battery cell further includes a... Infineon Technologies Ag

Modulated power supply

Devices and methods are provided related to modulated power supplies. The device includes an inductor. When a load is to be supplied with power, a terminal of the inductor is coupled to the load. When the load is not to be supplied with power, terminals of the inductor may be... Infineon Technologies Ag

Detecting brushfire in power systems

In some examples, a detection circuit is configured to detect a brushfire in a power system based on an electrical signal from the power system. The detection circuit is further configured to set a bit in response to detecting the brushfire.... Infineon Technologies Ag

Radio frequency wearable device

A radio frequency (RF) system includes an RF integrated circuit (IC) die. The RF IC die includes a first transmit circuit, a second transmit circuit, a first receive circuit, a second receive circuit, and a control circuit coupled to the first transmit circuit, the second transmit circuit, the first receive... Infineon Technologies Ag

Microelectromechanical device, a microelectromechanical system, and a manufacturing a microelectromechanical device

A microelectromechanical device, a microelectromechanical system, and a method of manufacturing a microelectromechanical device, wherein the microelectromechanical device may include: a substrate; a diaphragm mounted to the substrate; a first electrode mounted to the diaphragm; a second electrode mounted to the substrate; wherein the first electrode is laterally adjacent to... Infineon Technologies Ag

Measurement apparatus

Measurement apparatuses and methods are described. A measurement input is coupled with a first terminal of a capacitance via a first switch, and a reference voltage is coupled with the first terminal of the capacitance via a second switch. A measurement circuit is coupled to a second terminal of said... Infineon Technologies Ag

Hall sensor devices and methods for operating the same

A Hall sensor device includes a Hall effect region of a first conductivity type, electrical contact regions configured to provide electrical signals to/from the Hall effect region, and circuitry. Each electrical contact region is formed in a respective well of a second conductivity type that adjoins the Hall effect region.... Infineon Technologies Ag

Chip card module, chip card, chip card arrangement, forming a chip card module, and forming a chip card

A chip card module is provided. The chip card module may include a carrier having a first side and an opposite second side, a chip arranged over the carrier, the chip having a first chip contact, a first and a second antenna contact formed over the first side, a metal-free... Infineon Technologies Ag

Wafer box, wafer stacking aid, wafer carrier, wafer transport system, loading a wafer box with wafers and removing wafers from a wafer box

In various embodiments, a wafer box is provided. The wafer box may include a housing with a receiving space for receiving a stack comprising a plurality of wafers, each arranged above a housing base. The wafers are to be arranged with their main surfaces parallel to the housing base. The... Infineon Technologies Ag

Wafer box, arranging wafers in a wafer box, wafer protection plate and protecting a wafer

Various embodiments provide a wafer box. The wafer box may include a housing with a receiving space for receiving at least one wafer arranged above a housing base, at least one fixing structure which is connected to the housing base and which extends from the housing base, and at least... Infineon Technologies Ag

Semiconductor device, testing a semiconductor device and forming a semiconductor device

A semiconductor device includes a first source wiring substructure connected to a plurality of source doping region portions of a transistor structure, and a second source wiring substructure connected to a plurality of source field electrodes located in a plurality of source field trenches extending into a semiconductor substrate. A... Infineon Technologies Ag

Double-encapsulated power semiconductor module and producing the same

One aspect relates to a power semiconductor module. The module includes a module housing, a substrate, and a semiconductor chip attached to the substrate. The semiconductor chip is disposed in the module housing. A dielectric first encapsulation is disposed in the module housing, in physical contact with both the semiconductor... Infineon Technologies Ag

Capacitors with barrier dielectric layers, and methods of formation thereof

A device including a first metal feature is disposed in a first insulating layer. A second metal feature is disposed in a second insulating layer and separated from the first metal feature by a portion of a first etch stop liner disposed between the first and the second insulating layers.... Infineon Technologies Ag

Molded semiconductor package having an optical inspection feature

A molded semiconductor package includes a mold compound having opposing first and second main surfaces and an edge extending between the first and second main surfaces. A semiconductor die is embedded in the mold compound. A plurality of metal pads embedded in the mold compound are electrically connected to the... Infineon Technologies Ag

Avalanche diode having an enhanced defect concentration level and making the same

The invention relates to an avalanche diode that can be employed as an ESD protection device. An avalanche ignition region is formed at the p-n junction of the diode and includes an enhanced defect concentration level to provide rapid onset of avalanche current. The avalanche ignition region is preferably formed... Infineon Technologies Ag

Increase robustness of devices to overvoltage transients

In one example, a method includes selectively activating, by control logic and based on a control signal, a switch; in response to determining that an electrical characteristic of a signal provided to the switch satisfies a threshold while the switch is deactivated, activating, by the control logic and regardless of... Infineon Technologies Ag

System and a pumping speaker

According to an embodiment, a method of operating a speaker with an acoustic pump includes generating a carrier signal having a first frequency by exciting the acoustic pump at the first frequency and generating an acoustic signal having a second frequency by adjusting the carrier signal. In such embodiments, the... Infineon Technologies Ag

Electronic cigarette, liquid container, and operating an electronic cigarette

According to various embodiments, an electronic cigarette may be provided including a heater configured to vaporize a liquid; a mouth piece to deliver the vaporized liquid to a user of the electronic cigarette; a processor configured to control the heater to vaporize the liquid; a wireless communication circuit configured to... Infineon Technologies Ag

Apparatus for controlling a movement of a grinding wheel, semiconductor wafer grinding forming semiconductor devices

An apparatus for controlling a movement of a grinding wheel of a semiconductor wafer grinding system includes: an interface to obtain a feedback signal including grinding force information indicating a force applied to a semiconductor wafer by the grinding wheel; and a control module to generate a control signal for... Infineon Technologies Ag

Method for producing a semiconductor module

The method comprises fabricating a semiconductor panel comprising a plurality of semiconductor devices, fabricating a cap panel comprising a plurality of caps, bonding the cap panel onto the semiconductor panel so that each one of the caps covers one or more of the semiconductor devices, and singulating the bonded panels... Infineon Technologies Ag

Single or multiple axis magnetic sensor for relative phase measurement of wheel rotation in tpms application

Embodiments may provide a system, a wheel localizer, a wheel localization device, or methods for locating a position of at least one wheel out of a plurality of wheels of a vehicle. In one embodiment, a system comprises a detector that obtains information related to a reference magnetic field in... Infineon Technologies Ag

01/25/18 / #20180025192

Electronic identification document

An electronic identification document is provided. The electronic identification document may include a carrier, an identification element, a microwave interaction structure configured to interact with microwave radiation, and an alteration element, wherein the alteration element may be part of or in contact with the microwave interaction structure and may be... Infineon Technologies Ag

01/25/18 / #20180026133

Semiconductor device including a transistor array and a termination region and manufacturing such a semiconductor device

A semiconductor device in a semiconductor substrate having a first main surface includes a transistor array and a termination region. The transistor array includes a source region, a drain region, a body region, a drift zone, and a gate electrode at the body region. The gate electrode is configured to... Infineon Technologies Ag

01/25/18 / #20180026377

Radio frequency system for wearable device

A radio frequency (RF) system includes an RF integrated circuit (IC) die, and an antenna coupled to the RF IC die. The RF system further includes a reflector layer over the RF IC die, the reflector layer extending over at least a portion of the antenna, a combination of the... Infineon Technologies Ag

01/25/18 / #20180026548

System and a power inverter with controllable clamps

A system and method for a power inverter with controllable clamps comprises a first voltage swing path, the first voltage swing path including a first plurality of power transistors, the first voltage swing path producing portions of a positive half-wave of an output signal when active; a second voltage swing... Infineon Technologies Ag

01/25/18 / #20180027655

Mounting of components on a printed circuit board

A method for mounting components on a printed circuit board comprising the following steps: Arranging a first component on a first surface of the printed circuit board and a second component on a second surface of the printed circuit board, wherein the first component occupies a laterally overlapping position with... Infineon Technologies Ag

01/18/18 / #20180016132

Layer structure and manufacturing a layer structure

A layer structure may include a carrier, a two-dimensional layer, and a holding structure. The holding structure is arranged on the carrier and holds the two-dimensional layer on the carrier such that at least a portion of the two-dimensional layer is spaced apart from the carrier. The holding structure includes... Infineon Technologies Ag

01/18/18 / #20180017607

Supply self adjustment for systems and methods having a current interface

A sensor system having a current interface includes a supply and current interface, an electronic control unit and an enhanced initialization sensor. The supply and current interface is configured to receive a supply voltage. The electronic control unit is coupled to the supply and current interface. The enhanced initialization sensor... Infineon Technologies Ag

01/18/18 / #20180017636

Vertical hall sensor circuit comprising stress compensation circuit

A vertical Hall sensor circuit comprises an arrangement comprising a vertical Hall effect region of a first doping type, formed within a semiconductor substrate and having a stress dependency with respect to a Hall effect-related electrical characteristic. The vertical Hall sensor circuit further comprises a stress compensation circuit which comprises... Infineon Technologies Ag

01/18/18 / #20180018208

Diverse integrated processing using processors and diverse firmware

Fault detection devices, systems and methods are provided which implement identical processors. A first processor is configured to receive a first measurement, execute a first firmware based on the first measurement, and output a first result of the executed first firmware. A second processor, identical to the first processor, is... Infineon Technologies Ag

01/18/18 / #20180019019

Magnetic memory device and operating the same

A magnetic memory device is provided. The magnetic memory device includes a memory circuit comprising a first tunnel magnetoresistive element and a second tunnel magnetoresistive element coupled in series. An input node of the magnetic memory device is coupled to the first tunnel magnetoresistive element, wherein the input node is... Infineon Technologies Ag

01/18/18 / #20180019127

Method for processing a wafer, and layer stack

In various embodiments, a method for processing a wafer is provided. The method includes forming a layer stack, including a support layer and a useful layer and a sacrificial region between them, said sacrificial region having, vis-à-vis a processing fluid, a lower mechanical and/or chemical resistance than the support layer... Infineon Technologies Ag

01/18/18 / #20180019150

Method for processing one semiconductor wafer or a plurality of semiconductor wafers and protective cover for covering the semiconductor wafer

In various embodiments, a method for processing a semiconductor wafer is provided. The semiconductor wafer includes a first main processing side and a second main processing side, which is arranged opposite the first main processing side, and at least one circuit region having at least one electronic circuit on the... Infineon Technologies Ag

01/18/18 / #20180019218

Method for processing an electronic component and an electronic component

According to various embodiments an electronic component includes: at least one electrically conductive contact region; a contact pad including a self-segregating composition disposed over the at least one electrically conductive contact region; a segregation suppression structure disposed between the contact pad and the at least one electrically conductive contact region,... Infineon Technologies Ag

01/18/18 / #20180019304

Semiconductor device including a super junction structure in a sic semiconductor body

An embodiment of a semiconductor device includes a body region of a first conductivity type in a SiC semiconductor body of a second conductivity type. A super junction structure is in the SiC semiconductor body, and includes a drift zone section being of the second conductivity type and a compensation... Infineon Technologies Ag

01/18/18 / #20180019306

Method of manufacturing semiconductor devices and semiconductor device containing oxygen-related thermal donors

A method of manufacturing a semiconductor device includes determining information that indicates an extrinsic dopant concentration and an intrinsic oxygen concentration in a semiconductor wafer. On the basis of information about the extrinsic dopant concentration and the intrinsic oxygen concentration as well as information about a generation rate or a... Infineon Technologies Ag

01/18/18 / #20180019319

N-channel bipolar power semiconductor device with p-layer in the drift volume

A power semiconductor device having a semiconductor body configured to conduct a load current is disclosed. In one example, the device includes a source region having dopants of a first conductivity type; a semiconductor channel region implemented in the semiconductor body and separating the source region from a remaining portion... Infineon Technologies Ag

01/11/18 / #20180011181

Radar systems and methods thereof

A radar system includes a radar transceiver device, which includes a transmitter front end circuit for transmitting a chirp signal towards an object. The radar transceiver device includes a receiver front end circuit for receiving the reflected chirp signal from the object. The radar transceiver device includes a voltage controlled... Infineon Technologies Ag

01/11/18 / #20180011776

Lightweight trace based measurement systems and methods

An automotive electronics system includes an electronic control unit and a trace adapter. The electronic control unit is configured to receive measurement signals and provide control signals. Additionally, the electronic control unit is configured to generate or provide trace signals by replacing original instructions in a binary image with trace... Infineon Technologies Ag

01/11/18 / #20180012764

Bipolar transistor device with an emitter having two types of emitter regions

Disclosed is a bipolar semiconductor device, comprising a semiconductor body having a first surface; and a base region of a first doping type and a first emitter region in the semiconductor body, wherein the first emitter region adjoins the first surface and comprises a plurality of first type emitter regions... Infineon Technologies Ag

01/11/18 / #20180012819

Semiconductor devices and methods of formation thereof

In one embodiment, a semiconductor device includes a first contact pad disposed at a top side of a workpiece, a second contact pad disposed at the top side of the workpiece. An isolation region is disposed between the first contact pad and the second contact pad. A metal strip is... Infineon Technologies Ag

01/11/18 / #20180012836

Nanotube structure based metal damascene process

In various embodiments a method for manufacturing a metallization layer on a substrate is provided, wherein the method may include providing a structured layer of a catalyst material on the substrate, the catalyst material may include a first layer of material arranged over the substrate and a second layer of... Infineon Technologies Ag

01/11/18 / #20180012848

Crack stop barrier and manufacturing thereof

A semiconductor device includes a chip, a first kerf adjacent the chip and having a first main direction, a second kerf adjacent the chip and having a second main direction. A kerf junction is formed by the first kerf and the second kerf. A crack stop barrier is located along... Infineon Technologies Ag

01/11/18 / #20180012854

Enhanced solder pad

A solder pad includes a surface. A tin layer is arranged on the surface. At least one out of a bismuth layer, an antimony layer and a nickel layer is arranged on the tin layer.... Infineon Technologies Ag

01/11/18 / #20180013013

Semiconductor devices and methods for forming semiconductor devices

A semiconductor device includes an anode doping region of a diode structure arranged in a semiconductor substrate. The anode doping region has a first conductivity type. The semiconductor device further includes a second conductivity type contact doping region having a second conductivity type. The second conductivity type contact doping region... Infineon Technologies Ag

01/11/18 / #20180013188

Apparatuses and methods for signal coupling

Coupling apparatuses, circuits having such coupling apparatuses and corresponding methods are provided that involve a first and a second signal being coupled out from an out-coupling circuit part and being separately coupled into first and second circuit pmts. The use of different coupling mechanisms effects signal separation in this case.... Infineon Technologies Ag

01/11/18 / #20180013340

Determination of entering and exiting safe mode

The disclosure describes examples of integrate circuit (IC) chips. An IC chip includes a first detector configured to generate information indicative of whether an input supply voltage or power is greater than or equal to a first threshold, a second detector configured to receive a circuit voltage or current level... Infineon Technologies Ag

01/11/18 / #20180013342

Digital controller for switched capacitor dc-dc converter

Representative implementations of devices and techniques may minimize switching losses and voltage ripple in a switched capacitor de-de converter. A digital controller is used to control switching, based on an existing load. In some examples, the digital controller may insert a dead-time phase in a switching period, which may reduce... Infineon Technologies Ag

01/11/18 / #20180014124

Sensor arrangement having an optimized group delay and signal processing method

In various embodiments, a circuit arrangement is provided. The circuit arrangement includes a sensor set up to provide an analogue signal, an analogue/digital converter set up to receive the analogue signal and to provide a first signal, and a first filter set up to receive a signal based on the... Infineon Technologies Ag

01/04/18 / #20180003776

Magnetic sensor device and magnetic sensing method

The present disclosure relates to a magnetic sensor device having at least one magneto-resistive structure. The magneto-resistive structure comprises a magnetic free layer configured to generate a closed flux magnetization pattern in the free layer, and a magnetic reference layer having non-closed flux reference magnetization pattern; and a magnetic flux... Infineon Technologies Ag

01/04/18 / #20180002167

Micromechanical structure and manufacturing the same

A micromechanical structure in accordance with various embodiments may include: a substrate; and a functional structure arranged at the substrate; wherein the functional structure includes a functional region which is deflectable with respect to the substrate responsive to a force acting on the functional region; and wherein at least a... Infineon Technologies Ag

Patent Packs
01/04/18 / #20180002826

Method of manufacturing cz silicon wafers, and manufacturing a semiconductor device

In accordance with a method of manufacturing CZ silicon wafers, a parameter of at least two of the CZ silicon wafers is measured. A group of the CZ silicon wafers falling within a tolerance of a target specification is determined. The group of the CZ silicon wafers is divided into... Infineon Technologies Ag

01/04/18 / #20180003503

Damping of a sensor

A device comprises a substrate, a spring structure, and a first sensor. The first sensor is resiliently coupled with the substrate via the spring structure. The spring structure is configured to provide damping of the first sensor with respect to the substrate. The device also comprises a second sensor configured... Infineon Technologies Ag

01/04/18 / #20180003522

Magnetic sensor devices and methods for determining a rotation direction of a magnetic component about a rotation axis

A magnetic sensor device for determining a rotation direction of a magnetic component about a rotation axis is provided. The magnetic sensor device includes a bridge circuit with a first half-bridge and a second half-bridge. Each of the first half-bridge and the second half-bridge comprises at least one magnetoresistive structure.... Infineon Technologies Ag

01/04/18 / #20180003754

Device, automatic test of integrated antennas

A test set-up for testing a system-in package with an integrated antenna is described herein. According to one exemplary embodiment, the test set-up includes a carrier with an RF probe arranged thereon and a test socket with resilient electric contacts. The test socket is mounted on the carrier and provides... Infineon Technologies Ag

01/04/18 / #20180003780

Apparatus and method using a plurality of magnetic field sensitive devices

An apparatus for magnetic field detection comprises a plurality of magnetic field sensitive devices comprising at least a first magnetic field sensitive device, a second magnetic field sensitive device and a third magnetic field sensitive device. The apparatus comprises a power source configured to provide a first supply current through... Infineon Technologies Ag

01/04/18 / #20180005830

Forming electrode trenches by using a directed ion beam and semiconductor device with trench electrode structures

By directing an ion beam with a beam divergence θ on a process surface of a semiconductor substrate, parallel electrode trenches are formed in the semiconductor substrate. A center axis of the directed ion beam is tilted to a normal to the process surface at a tilt angle α, wherein... Infineon Technologies Ag

01/04/18 / #20180005831

Method of reducing an impurity concentration in a semiconductor body

A method includes kicking out impurity atoms from substitutional sites of a crystal lattice of a semiconductor body by implanting particles via a first surface into the semiconductor body, reducing a thickness of the semiconductor body by removing semiconductor material of the semiconductor body, and annealing the semiconductor body in... Infineon Technologies Ag

01/04/18 / #20180005838

Segmented edge protection shield

A segmented edge protection shield for plasma dicing a wafer. The segmented edge protection shield includes an outer structure and a plurality of plasma shield edge segments. The outer structure defines an interior annular edge configured to correspond to the circumferential edge of the wafer. Each one of the plurality... Infineon Technologies Ag

01/04/18 / #20180006027

Power semiconductor device having fully depleted channel regions

A power semiconductor device is disclosed. In one example, the device includes a semiconductor body coupled to a first load terminal structure and a second load terminal structure. An active cell field is implemented in the semiconductor body. The active cell field is surrounded by an edge termination zone. A... Infineon Technologies Ag

01/04/18 / #20180006029

Power semiconductor device having fully depleted channel regions

A power semiconductor device includes a semiconductor body coupled to first and second load terminal structures, and first and second cells each configured for controlling a load current and electrically connected to the first load terminal structure and to a drift region. A first mesa in the first cell includes... Infineon Technologies Ag

01/04/18 / #20180006109

Power semiconductor device having fully depleted channel regions

A power semiconductor device is disclosed. The device includes a semiconductor body coupled to a first load terminal structure and a second load terminal structure, a first cell and a second cell. A first mesa is included in the first cell, the first mesa including: a first port region and... Infineon Technologies Ag

01/04/18 / #20180006110

Power semiconductor device having fully depleted channel regions

A power semiconductor device includes a semiconductor body coupled to first and second load terminal structures, an active cell field in the body, and a plurality of first and second cells in the active cell field. Each cell is electrically connected to the first load terminal structure and to a... Infineon Technologies Ag

01/04/18 / #20180006115

Power semiconductor device having fully depleted channel region

A power semiconductor device includes a semiconductor body coupled to first and second load terminal structures, first and second cells electrically connected to the first load terminal structure and to a drift region, the drift region having a first conductivity type; a first mesa in the first cell and including:... Infineon Technologies Ag

01/04/18 / #20180006352

Differential directional coupler, signal conversion converting a differential input signal

In accordance with an embodiment, a differential directional coupler includes a first coupler having a first transformer comprising a first input coil and a first output coil, and a second coupler having a second transformer comprising a second input coil and a second output coil. The first input coil and... Infineon Technologies Ag

01/04/18 / #20180006448

Central combined active esd clamp

An electrostatic discharge clamp for groups of terminals having cascaded and different voltage classes, a plurality of discharge paths, and a multiple-input trigger circuit. In response to detecting a positive voltage event at any of the groups of terminals, the trigger circuitry can turn on an electronic switch causing current... Infineon Technologies Ag

Patent Packs
01/04/18 / #20180006473

Ensuring backward compatibility in battery authentication applications

A system and method to identify whether a removable battery pack inserted into a battery-powered device is an authorized battery pack for the device. Battery-powered devices may include a battery-powered drill, saw, flashlight or other type of device. The battery-powered device may send an authentication query to the battery pack.... Infineon Technologies Ag

01/04/18 / #20180006639

Electronic switching and reverse polarity protection circuit

In accordance with an embodiment, an electronic circuit includes a first transistor device, at least one second transistor device, and a drive circuit. The first transistor device is integrated in a first semiconductor body, and includes a first load pad at a first surface of the first semiconductor body and... Infineon Technologies Ag

01/04/18 / #20180007649

Signal detector device and method

A signal detector device and method includes a quadrature demodulator configured to receive an input signal, a first reference signal, and a second reference signal in quadrature with the first reference signal, the quadrature demodulator further configured to produce a plurality of output signals from the input signal and the... Infineon Technologies Ag

12/28/17 / #20170371004

Systems and arrangements of three-contact hall-effect devices and related methods

Embodiments relate to vertical Hall effect devices comprising Hall effect structures with three contacts in each Hall effect region. In one embodiment, the contacts are interconnected with terminals such that the Hall effect device has symmetry and nominally identical internal resistances in the absence of externally applied magnetic fields. Embodiments... Infineon Technologies Ag

12/28/17 / #20170371148

Membrane structures for microelectromechanical pixel and display devices and systems, and methods for forming membrane structures and related devices

Embodiments relate to microelectromechanical systems (MEMS) and more particularly to membrane structures comprising pixels for use in, e.g., display devices. In embodiments, a membrane structure comprises a monocrystalline silicon membrane above a cavity formed over a silicon substrate. The membrane structure can comprise a light interference structure that, depending upon... Infineon Technologies Ag

12/28/17 / #20170371396

Microcontroller power reduction system and method

A microcontroller that can be configured to selectively operate in a synchronous mode or an asynchronous mode, and a method of selectively switching the operating mode is described. The microcontroller can include a processor and a system controller. The processor can be configured to operate synchronously in a synchronous operating... Infineon Technologies Ag

12/28/17 / #20170372952

Substrate and method including forming a via comprising a conductive liner layer and conductive plug having different microstructures

In an embodiment, a substrate includes semiconductor material and a conductive via. The conductive via includes a via in the substrate, a conductive plug filling a first portion of the via and a conductive liner layer that lines side walls of a second portion of the via and is electrically... Infineon Technologies Ag

12/28/17 / #20170372985

Ldmos transistor and method

In an embodiment, a semiconductor device includes a semiconductor substrate having a front surface, a LDMOS transistor arranged in the front surface of the substrate and having an intrinsic source, and a through substrate via. A first conductive layer lines sidewalls of the through substrate via and extends from the... Infineon Technologies Ag

12/28/17 / #20170372986

Ldmos transistor and method

In an embodiment, a semiconductor device includes a semiconductor substrate, a LDMOS transistor arranged in a front surface of the semiconductor substrate and a conductive through substrate via. The conductive through substrate via includes a via extending from the front surface to a rear surface of the semiconductor substrate, a... Infineon Technologies Ag

12/28/17 / #20170373137

Semiconductor device including a ldmos transistor

In an embodiment, a semiconductor device includes a semiconductor substrate having a bulk resistivity ρ≧100 Ohm.cm, a front surface and a rear surface, at least one LDMOS transistor in the semiconductor substrate, and a RESURF structure. The RESURF structure includes a doped buried layer arranged in the semiconductor substrate, spaced... Infineon Technologies Ag

12/28/17 / #20170373138

Semiconductor device including an ldmos transistor and a resurf structure

In an embodiment, a high frequency amplifying circuit includes a semiconductor device. The semiconductor device includes a semiconductor substrate having a bulk resistivity ρ≧100 Ohm·cm, a front surface and a rear surface, an LDMOS (Lateral Diffused Metal Oxide Semiconductor) transistor in the semiconductor substrate, and a RESURF structure comprising a... Infineon Technologies Ag

12/28/17 / #20170373157

Power semiconductor device

A power semiconductor device has a semiconductor body configured to conduct a load current in parallel to an extension direction between first and second load terminals of the power semiconductor device. The semiconductor body includes a doped contact region electrically connected to the second load terminal, a doped drift region... Infineon Technologies Ag

12/28/17 / #20170373182

Semiconductor devices and methods for forming a semiconductor device

A semiconductor device includes a guard structure located laterally between first and second active areas of a semiconductor substrate. The guard structure includes a first doping region at a front side surface of the substrate and a wiring structure electrically connecting the first doping region to a highly doped portion... Infineon Technologies Ag

12/28/17 / #20170373187

Semiconductor device including a ldmos transistor and method

In an embodiment, a semiconductor device includes a semiconductor substrate having a front surface, a LDMOS transistor in the front surface, and a metallization structure arranged on the front surface. The metallization structure includes at least one cavity arranged in at least one dielectric layer.... Infineon Technologies Ag

12/28/17 / #20170373645

Doherty-chireix combined amplifier

An amplifier that is configured to amplify an RF signal includes a power combiner circuit. The power combiner circuit includes a first branch connected between a first RF input port and a summing node and a second branch connected between a second RF input port and the summing node. Each... Infineon Technologies Ag

12/28/17 / #20170373678

Switch device

A switch is provided having a switch transistor as well as a monitoring component to monitor a control signal applied to the switch transistor. With the monitoring component, in some implementation a monitoring of the control signal independent from a load path may be possible.... Infineon Technologies Ag

12/28/17 / #20170373680

Switch

A switch includes an input terminal, an output terminal, and a stack including transistors, such as, for example, field effect transistors, coupled in series, the stack being coupled between the input terminal and the output terminal. The switch also includes at least one switching element configured to be selectively operated... Infineon Technologies Ag

12/28/17 / #20170373685

Dual gate switch device

Switch devices using switch transistors with dual gates are provided. The dual gates may be controlled independently from each other by first and second gate driver circuits.... Infineon Technologies Ag

12/21/17 / #20170364111

Linear voltage regulator

A circuit comprising a series voltage regulator comprising a first semiconductor device coupled in series between a supply voltage and a voltage output, the series regulator operable to receive a voltage level from the supply voltage and to provide a regulated voltage level at the voltage output; and a parallel... Infineon Technologies Ag

12/21/17 / #20170365460

Method and a processing device for processing at least one carrier

A processing device including: a chamber to accommodate at least one carrier in a processing region of the chamber, an inlet structure disposed over the chamber, the inlet structure providing a merging region fluidly connected to the processing region, a first liquid control arrangement coupled at least to the chamber,... Infineon Technologies Ag

12/21/17 / #20170365507

Field emission devices and methods of making thereof

In one embodiment of the present invention, an electronic device includes a first emitter/collector region and a second emitter/collector region disposed in a substrate. The first emitter/collector region has a first edge/tip, and the second emitter/collector region has a second edge/tip. A gap separates the first edge/tip from the second... Infineon Technologies Ag

12/21/17 / #20170365516

Methods for forming a semiconductor device and semiconductor devices

A method for forming a semiconductor device includes forming a plurality of non-semiconductor material portions at a first side of a semiconductor substrate; forming semiconductor material on the plurality of non-semiconductor material portions to bury the plurality of non-semiconductor material portions within semiconductor material; removing at least a portion of... Infineon Technologies Ag

12/21/17 / #20170365544

Semiconductor device fabricated by flux-free soldering

A method of fabricating a semiconductor device is disclosed. In one aspect, the method includes placing a first semiconductor chip on a carrier with the first main surface of the first semiconductor chip facing the carrier. A first layer of soft solder material is provided between the first main surface... Infineon Technologies Ag

12/21/17 / #20170366001

Transient voltage protection circuits, devices, and methods

A transient voltage protection circuit includes a first input/output pad, a second input/output pad, and a trigger circuit coupled between the first input/output pad and the second input/output pad. The trigger circuit includes a first trigger element which includes a first input/output node, a second input/output node, a third input/output... Infineon Technologies Ag

12/21/17 / #20170366083

Circuit and operating the circuit

In various embodiments, a circuit is provided. The circuit may include a plurality of cascode stages connected in series with one another, a voltage divider which is connected in parallel with the plurality of cascode stages and is coupled to the cascode stages in order to make available a first... Infineon Technologies Ag

12/21/17 / #20170366155

Radio frequency device

Radio frequency devices and methods are provided where a network like a filter network or impedance matching network comprises a series connection of at least two inductors.... Infineon Technologies Ag

12/21/17 / #20170366180

Electric assembly including an insulated gate bipolar transistor device and a wide-bandgap transistor device

An electric assembly includes an insulated gate bipolar transistor device, a wide-bandgap transistor device electrically connected in parallel with the bipolar transistor device and a control circuit. The control circuit is electrically coupled to a gate terminal of the bipolar transistor device and to a control terminal of the wide-bandgap... Infineon Technologies Ag

12/21/17 / #20170366385

High speed pulse modulation system

A modulator operable to control an oscillator is described. The modulator can include a memory that stores oscillator control values and a bit streaming block. The bit streaming block can generate a bit stream based on the oscillator control values and transmit the bit stream to the oscillator to control... Infineon Technologies Ag

12/21/17 / #20170367155

Reducing power dissipation in driver circuits

In one example, a method includes generating, by a current source of a device, a first portion of a power signal that drives one or more load elements. In this example, a second portion of the power signal is generated by one or more components that are external to the... Infineon Technologies Ag

12/21/17 / #20170367160

Driving several light sources

A device for driving several light sources is provided, wherein the several light sources are arranged in a matrix structure; wherein the several light sources of the matrix structure are connected to a semiconductor device; wherein a portion of the semiconductor device corresponds to a light source of the matrix... Infineon Technologies Ag

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