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Infineon Technologies Ag patents


Recent patent applications related to Infineon Technologies Ag. Infineon Technologies Ag is listed as an Agent/Assignee. Note: Infineon Technologies Ag may have other listings under different names/spellings. We're not affiliated with Infineon Technologies Ag, we're just tracking patents.

ARCHIVE: New 2018 2017 2016 2015 2014 2013 2012 2011 2010 2009 | Company Directory "I" | Infineon Technologies Ag-related inventors


Offset voltage compensation

A bridge circuit having a full-bridge circuit having a first branch and a second branch coupled in parallel, the first branch comprising a first half-bridge circuit and a first tunnel magnetoresistance (TMR) resistor cascade coupled in series, and the second branch comprising a second half-bridge circuit and a second TMR... Infineon Technologies Ag

Mems device and mems vacuum microphone

In accordance with an embodiment, a MEMS device includes a first membrane element, a second membrane element spaced apart from the first membrane element, a low pressure region between the first and second membrane elements, the low pressure region having a pressure less than an ambient pressure, and a counter... Infineon Technologies Ag

Overtemperature condition identified using a signal characteristic

A sensor may bias a signal to have a characteristic. The characteristic of the signal may depend on a temperature of the sensor such that the characteristic of the signal is outside of a permitted range, associated with the characteristic, when the temperature of the sensor satisfies a temperature threshold.... Infineon Technologies Ag

System on chip integrity verification method and system

Methods and systems for checking the integrity of a system on chip (SOC) are described. The SOC can include a controller and one or more registers. Register value(s) from the register(s) can be obtained at a first time to generate a first set of register values. Process(es) of the SOC... Infineon Technologies Ag

Multicolored logo on smart card modules

In various embodiments, a smart card module is provided. The smart card module may include an electronic circuit in or on a carrier, a smart card module contact layer, which is coupled to the electronic circuit and provides a plurality of smart card module contacts, a mirror layer on the... Infineon Technologies Ag

Connectable package extender for semiconductor device package

A semiconductor packaging system includes a semiconductor device package having a semiconductor chip with two or more terminals and a protective structure encapsulating and electrically insulating the semiconductor chip. Two or more electrical conductors that are each electrically connected to one of the terminals extend to an outer surface of... Infineon Technologies Ag

Chip carrier with electrically conductive layer extending beyond thermally conductive dielectric sheet

A chip carrier which comprises a thermally conductive and electrically insulating sheet, a first electrically conductive structure on a first main surface of the sheet, and a second electrically conductive structure on a second main surface of the sheet, wherein the first electrically conductive structure and the second electrically conductive... Infineon Technologies Ag

Semiconductor device having a variable carbon concentration

A semiconductor device includes at least one transistor structure. The at least one transistor structure includes an emitter or source terminal, and a collector or drain terminal. A carbon concentration within a semiconductor substrate region located between the emitter or source terminal and the collector or drain terminal varies between... Infineon Technologies Ag

Receiver, sender, retrieving an additional datum from a signal and transmitting a datum and an additional datum in a signal

A receiver includes a receiver circuit to receive a first transition in a first direction, a second transition in a second, different direction after the first transition and a third transition in the first transition after the second transition of a signal. A first time period between the first and... Infineon Technologies Ag

Sound transducer structure and manufacturing a sound transducer structure

For manufacturing a sound transducer structure, membrane support material is applied on a first main surface of a membrane carrier material and membrane material is applied in a sound transducing region and an edge region on a surface of the membrane support material. In addition, counter electrode support material is... Infineon Technologies Ag

Method for producing a metal-ceramic substrate, and a metal-ceramic substrate

A method for producing a metal-ceramic substrate includes attaching a metal layer to a surface side of a ceramic layer, the metal layer being structured into a plurality of metallization regions respectively separated from one another by at least one trench-shaped intermediate space to form conductive paths and/or connective surfaces... Infineon Technologies Ag

Magnetic field sensor circuit in package with means to add a signal from a coil

Sensor devices, systems and methods are provided, including a first magnetic sensor configured to measure a first magnetic field in a first frequency range and output a first sensor signal based on the measured first magnetic field, a second magnetic sensor configured to measure a second magnetic field in a... Infineon Technologies Ag

Chip carrier configured for delamination-free encapsulation and stable sintering

A chip carrier for carrying an electronic chip, wherein the chip carrier comprises a mounting section configured for mounting an electronic chip by sintering, and an encapsulation section configured for being encapsulated by an encapsulant.... Infineon Technologies Ag

Chip packages, chip arrangements, a circuit board, and methods for manufacturing chip packages

A chip package is provided, the chip package including: a chip carrier; a chip disposed over and electrically connected to a chip carrier top side; an electrically insulating material disposed over and at least partially surrounding the chip; one or more electrically conductive contact regions formed over the electrically insulating... Infineon Technologies Ag

Multi-purpose non-linear semiconductor package assembly line

A method of producing packaged semiconductor devices includes providing a first packaging substrate panel. A second packaging substrate panel is provided. The first and second packaging substrate panels are moved through an assembly line that includes a plurality of package assembly tools using a control mechanism. First type packaged semiconductor... Infineon Technologies Ag

Method for manufacturing an electronic device and electronic device

A method for manufacturing an electronic device includes: providing a semiconductor carrier including first and second vertically integrated electronic structures laterally spaced apart from each other, an electrical connection layer disposed over a first side of the semiconductor carrier and electrically connecting the first and second vertically integrated electronic structures... Infineon Technologies Ag

Semiconductor device, silicon wafer and manufacturing a silicon wafer

A method of manufacturing a silicon wafer is provided that includes extracting an n-type silicon ingot over an extraction time period from the a silicon melt comprising n-type dopants; adding p-type dopants to the silicon melt over at least part of the extraction time period, thereby compensating an n-type doping... Infineon Technologies Ag

Semiconductor device comprising a gradually increasing field dielectric layer and manufacturing a semiconductor device

A method of manufacturing a semiconductor device is providing, which includes forming a trench in a semiconductor substrate, forming an oxide layer over sidewalls and over a bottom side of the trench, performing an ion implantation process, forming a cover layer, and patterning the covering layer, thereby forming an uncovered... Infineon Technologies Ag

Power semiconductor device

A power semiconductor device is disclosed. In one example, the device comprises a semiconductor body having a front side, a backside, a first load terminal, and a drift region. A first cell is arranged at the front side. Further, the power semiconductor device comprises: a first backside emitter region included... Infineon Technologies Ag

Current reduction for activated load

In one example, a circuit includes an input, an output, and a control module. The input is configured to receive a control signal indicating whether to activate or deactivate a load. The output is configured to supply current to activate the load. The control module is configured to determine whether... Infineon Technologies Ag

Multi-gate half-bridge circuit and package

In some examples, a half-bridge circuit includes a first switch including a first load terminal, a second load terminal, a first control terminal, and a second control terminal that is electrically isolated from the first control terminal of the first switch. The half-bridge circuit further includes a second switch including... Infineon Technologies Ag

Magnetic angle sensor device and operation

A magnetic angle sensor device is suggested comprising a shaft that is arranged rotatably around a rotation axis, at least one permanent magnet, a stator and two magnetic angle sensors, which are fixed to the stator, wherein the shaft is arranged rotatably against the stator, wherein the at least one... Infineon Technologies Ag

Method for processing a monocrystalline substrate and micromechanical structure

In various embodiments, a method of processing a monocrystalline substrate is provided. The method may include severing the substrate along a main processing side into at least two monocrystalline substrate segments, and forming a micromechanical structure comprising at least one monocrystalline substrate segment of the at least two substrate segments.... Infineon Technologies Ag

Temporary mechanical stabilization of semiconductor cavities

A method for fabricating an electronic device is disclosed. In one example, the method comprises providing a semiconductor wafer, forming a plurality of cavities into the semiconductor wafer, filling a stabilization material into the cavities, fabricating a temporary panel by applying a cap sheet onto the semiconductor wafer, the cap... Infineon Technologies Ag

Magnetic angle sensor device and operation

An embodiment relates to a magnetic angle sensor device comprising a first group of magnetic angle sensors and a second group of magnetic angle sensors, wherein the first group of magnetic angle sensors and the second group of magnetic angle sensors are located on different positions along a straight line,... Infineon Technologies Ag

Magnetic angle sensor device and operation

A magnetic angle sensor device and a method for operating such device is provided. The magnetic angle sensor device includes a shaft rotatable around a rotation axis; a magnetic field source coupled to the shaft; a first magnetic angle sensor configured to generate a first signal that represents a first... Infineon Technologies Ag

True-power-on and diagnostic-capable incremental interface for angular sensors

The current disclosure relates to an angular sensor. The angular sensor includes a sensing module, a digital processor and an incremental interface. The sensing module is configured to generate a sensing signal containing measurements of rotation activities of a rotating physical entity. The digital processor is configured to process and... Infineon Technologies Ag

Method and assembly for determining the carbon content in silicon

A method of determining the carbon content in a silicon sample may include: generating electrically active polyatomic complexes within the silicon sample. Each polyatomic complex may include at least one carbon atom. The method may further include: determining a quantity indicative of the content of the generated polyatomic complexes in... Infineon Technologies Ag

Semiconductor device including a ldmos transistor, monolithic microwave integrated circuit and method

In an embodiment, a semiconductor device includes a semiconductor substrate including a front surface, an LDMOS transistor structure in the front surface, a conductive interconnection structure arranged on the front surface, and at least one cavity arranged in the front surface.... Infineon Technologies Ag

Semiconductor device and forming a semiconductor device

A semiconductor device includes a common doping region located within a semiconductor substrate of the semiconductor device. The common doping region includes a first portion. A maximal doping concentration within the first portion is higher than 1·1015 cm−3. The common doping region includes a second portion. A minimal doping concentration... Infineon Technologies Ag

Method of manufacturing a semiconductor device having electrode trenches, isolated source zones and separation structures

A semiconductor device includes a semiconductor mesa having source zones and at least one body zone forming first pn junctions with the source zones and a second pn junction with a drift zone. Electrode structures are provided on opposite sides of the semiconductor mesa, at least one of the electrode... Infineon Technologies Ag

Power switch device

Power switch devices and methods are provided where an undervoltage event in a supply voltage is detected. Information regarding the undervoltage event is stored in a memory element. The memory element is supplied by a control signal.... Infineon Technologies Ag

System and power supply ripple compensation

According to an embodiment, a power compensation circuit is configured to be coupled to a power supply. The power compensation circuit includes a measurement circuit and a compensation circuit. The measurement circuit is configured to receive a power supply signal from the power supply, and determine a variation of the... Infineon Technologies Ag

Circuit and checking the integrity of a control signal

According to an embodiment, a circuit is described comprising a plurality of flip-flops, a control circuit configured to provide a control signal to each flip-flop of the plurality of flip-flops and an integrity checking circuit connected to the control circuit and to the plurality of flip-flops configured to check whether... Infineon Technologies Ag

03/22/18 / #20180078136

Device comprising an overlay mechanism, system with devices each comprising an overlay mechanism with an individually programmable delay or overlaying data

A device includes an overlay mechanism, system with devices each including an overlay mechanism with an individually programmable delay or method for overlaying data. A method for overlaying data includes redirecting an access which is directed to a first memory location to a second memory location. The method for overlaying... Infineon Technologies Ag

03/22/18 / #20180080957

Configuration of integrated current flow sensor

This disclosure is directed to techniques that may accurately determine the amount of current flowing through a power switch circuit by measuring the voltage across the inherent impedance of the circuit connections. One connection may include a low impedance connection between the power switch output and ground, where the low... Infineon Technologies Ag

03/22/18 / #20180082848

Electronic device, electronic module and methods for fabricating the same

An electronic device, an electronic module comprising the electronic device and methods for fabricating the same are disclosed. In one example, the electronic device includes a semiconductor substrate and a metal stack disposed on the semiconductor substrate, wherein the metal stack comprises a first layer, wherein the first layer comprises... Infineon Technologies Ag

03/22/18 / #20180082853

Method of planarising a surface

In an embodiment, a method of planarising a surface includes applying a first layer to a surface including a protruding region including at least one compound semiconductor and a stop layer on an upper surface such that the first layer covers the surface and the protruding region, removing a portion... Infineon Technologies Ag

03/22/18 / #20180082882

Wafer chuck, use of the wafer chuck and testing a semiconductor wafer

A wafer chuck configured to support a wafer during a wafer test procedure comprises a contact portion for supporting the wafer while being in contact with the wafer. The contact portion is made of a conductive material, the conductive material having a melting point larger than 1500° C.... Infineon Technologies Ag

03/22/18 / #20180082898

Methods for splitting semiconductor devices and semiconductor device

A method for splitting a semiconductor wafer includes incorporating hydrogen atoms into at least a splitting region of a semiconductor wafer. The splitting region includes a concentration of nitrogen atoms higher than 1·1015 cm−3. The method further includes splitting the semiconductor wafer at the splitting region of the semiconductor wafer.... Infineon Technologies Ag

03/22/18 / #20180082921

Package with roughened encapsulated surface for promoting adhesion

A package comprising at least one electronic chip, a first heat removal body thermally coupled to a first main surface of the at least one electronic chip and configured for removing thermal energy from the at least one electronic chip, an encapsulant encapsulating at least part of the at least... Infineon Technologies Ag

03/22/18 / #20180082925

Package cooled with cooling fluid and comprising shielding layer

A package which comprises at least one electronic chip, an encapsulant encapsulating at least part of the at least one electronic chip, and a shielding layer on at least part of an external surface of the encapsulant configured for shielding an interior of the package with regard to cooling fluid... Infineon Technologies Ag

03/22/18 / #20180083097

Diode structure of a power semiconductor device

A power semiconductor device includes a semiconductor body coupled to first and second load terminals. The body includes: at least a diode structure configured to conduct a load current between the terminals and including an anode port electrically connected to the first load terminal and a cathode port electrically connected... Infineon Technologies Ag

03/22/18 / #20180083107

Semiconductor wafer and method

In an embodiment, a method of planarising a surface includes applying a first layer to a surface including a protruding region such that the first layer covers the surface and the protruding region, removing a portion of the first layer above the protruding region and forming an indentation in the... Infineon Technologies Ag

03/22/18 / #20180083649

Analog/digital conversion with analog filtering

A circuit (100) comprises an input terminal (141) which is configured to receive an analog input signal (142). The circuit (100) also comprises a combination element (601) which is configured to combine a number of time-displaced signal values of the input signal (142) to form an analog combination signal (144).... Infineon Technologies Ag

03/22/18 / #20180083720

Phase and amplitude signal sensing circuit for radio frequency (rf) transmitters

A radio frequency (RF) transmitter for self-sensing power and phase of an RF signal is provided. A local oscillator (LO) is configured to generate a LO signal. A power amplifier is configured to generate the RF signal from the LO signal, wherein the LO and RF signals are periodic signals... Infineon Technologies Ag

03/22/18 / #20180084343

Circuit arrangement with an optimized frequency response and calibrating a circuit arrangement

In various embodiments, a circuit arrangement includes a calibration filter set up to receive a signal based on a first signal and to provide a calibrated signal, the first signal being a signal which is provided by an analog/digital converter and is based on an analog signal, the analog signal... Infineon Technologies Ag

03/15/18 / #20180076823

Method and analog-to-digital conversion

An apparatus for converting an analog signal to a digital signal comprises an input node to be set to an input voltage that is based on the analog signal. The input node is configured to be coupled to a tank capacitor to receive charge from the tank capacitor. The apparatus... Infineon Technologies Ag

03/15/18 / #20180074173

System and radar

In accordance with an embodiment, a method of operating a radar system includes receiving radar configuration data from a host, and receiving a start command from the host after receiving the radar configuration data. The radar configuration data includes chirp parameters and frame sequence settings. After receiving the start command,... Infineon Technologies Ag

03/15/18 / #20180076036

Self aligned silicon carbide contact formation using protective layer

A silicon-carbide substrate that includes: a doped silicon-carbide contact region directly adjoining a main surface of the substrate, and a dielectric layer covering the main surface is provided. A protective layer is formed on the silicon-carbide substrate such that the protective layer covers the dielectric layer and exposes the doped... Infineon Technologies Ag

03/15/18 / #20180076309

Power semiconductor device with dv/dt controllability

A power semiconductor device is disclosed. In one example, the device comprises a semiconductor body coupled to a first load terminal and a second load terminal and comprising a drift region configured to conduct a load current between said terminals. The drift region comprises dopants of a first conductivity type.... Infineon Technologies Ag

03/15/18 / #20180076321

Metallization layers for semiconductor devices and methods of forming thereof

A method of fabricating a semiconductor device includes etching a first surface of a semiconductor substrate from a first side using a first etching process to expose a second surface. The second surface includes a first plurality of features. The first plurality of features has an average height that is... Infineon Technologies Ag

03/15/18 / #20180076747

Gate-driver circuit with improved common-mode transient immunity

Techniques are described for providing, in a gate driver circuit, a compensation current to compensate for parasitic displacement current induced during the rising edge of an output voltage at an output gate of the gate driver circuit. In one example, the techniques of the disclosure include activating, by a bridge... Infineon Technologies Ag

03/08/18 / #20180065428

Fail safe device, a tire pressure measurement system, a vehicle, a monitoring, and a computer program

Embodiments provide a fail-safe device, a tire pressure measurement system, a vehicle, a tire, a method and a computer program for monitoring a first sensor of a tire pressure monitoring system. The fail-safe device includes a first input for a first signal from the first sensor. The first signal indicates... Infineon Technologies Ag

03/08/18 / #20180066929

Device, a tire pressure measurement system, a tire, a vehicle, a method and a computer program for determining information indicating a length of a footprint of a tire

Embodiments provide a device, a tire pressure measurement system, a tire, a vehicle, a method and a computer program for determining information indicating a length of a footprint of the tire. The device for determining information indicating a length of a footprint of a tire includes an input for a... Infineon Technologies Ag

03/08/18 / #20180067153

Method for processing a single-edge nibble transmission signal, data receiving device and data transmission device

In various embodiments, a method for processing a Single-Edge Nibble Transmission Signal is provided. The method includes determining of at least one drop in a signal level of the time-variable Single-Edge Nibble Transmission Signal and at least one next rise in the signal level after the drop in the signal... Infineon Technologies Ag

03/08/18 / #20180068975

Semiconductor devices and forming semiconductor devices

A method for forming semiconductor devices includes attaching a glass structure to a wide band-gap semiconductor wafer having a plurality of semiconductor devices. The method further includes forming at least one pad structure electrically connected to at least one doping region of a semiconductor substrate of the wide band-gap semiconductor... Infineon Technologies Ag

03/08/18 / #20180068982

Method of forming a chip assembly and chip assembly

A method of forming a chip assembly may include forming a plurality of cavities in a carrier; The method may further include arranging a die attach liquid in each of the cavities; arranging a plurality of chips on the die attach liquid, each chip comprising a rear side metallization and... Infineon Technologies Ag

03/08/18 / #20180070417

Driving several light sources

According to an example, a device is provided for driving several light sources, wherein the device is arranged to sense a supply signal and apply a phase shift to a switching signal of at least one of the several light sources based on the sensed supply signal. Also, accordingly a... Infineon Technologies Ag

03/01/18 / #20180060573

Secure signal transmission

A processing device having a skew controller configured to measure skew values between a plurality of signal lines coupled to the processing device; and a security module configured to store the skew values, and to compare new skew values with the stored skew values, wherein when the new skew values... Infineon Technologies Ag

03/01/18 / #20180056734

Magnetic sensor used for lf communication in tpms application

A tire pressure monitoring system (TPMS) sensor and a communication method are provided. The TPMS sensor includes a microcontroller unit, a pressure sensor electrically connected to the microcontroller unit and configured to measure an internal air pressure of a tire and a receiver electrically connected to the microcontroller unit and... Infineon Technologies Ag

03/01/18 / #20180059066

Gas analyzer

A gas analyzer is provided. The gas analyzer may include: a tubular housing having a housing wall extending along an axial direction of the tubular housing and surrounding a gas chamber configured to receive a gas to be analyzed therein, an excitation element positioned at a first axial end of... Infineon Technologies Ag

03/01/18 / #20180059166

Test circuit for stress leakage measurements

In accordance with an embodiment, a circuit includes: a gate drive circuit; an output transistor, and a gate coupled to the gate drive circuit; a normally-on transistor including a load path coupled to the gate drive circuit and to the gate of the output transistor; and a pull-up device, where... Infineon Technologies Ag

03/01/18 / #20180059216

Receive chain configuration for concurrent multi-mode radar operation

A frequency-modulated continuous-wave (FMCW) radar sensor may include a receive chain, where the receive chain includes a plurality of elements associated with processing a radar signal, where at least one element, of the plurality of elements, is configurable independent of at least one other element of the plurality of elements.... Infineon Technologies Ag

Patent Packs
03/01/18 / #20180059708

System and supply current shaping

According to an embodiment, a device includes a power supply terminal configured to provide a power supply signal to a plurality of functional components and a power supply shaping circuit coupled to the power supply terminal. The power supply shaping circuit is configured to determine a variation signal of the... Infineon Technologies Ag

03/01/18 / #20180061206

Sensor devices

Sensor devices and corresponding methods are provided where a quantity is measured and monitored over time. The quantity may be related to a lifetime of the sensor device.... Infineon Technologies Ag

03/01/18 / #20180061644

Methods for forming a semiconductor device and semiconductor devices

A semiconductor device and method is disclosed. In one example, the method for forming a semiconductor device includes forming a trench extending from a front side surface of a semiconductor substrate into the semiconductor substrate. The method includes forming of material to be structured inside the trench. Material to be... Infineon Technologies Ag

03/01/18 / #20180061660

Barrier layer formation using thermal processing

A method of fabricating a semiconductor device includes forming a barrier layer over a surface of a semiconductor substrate. A treated barrier layer is formed by subjecting an exposed surface of the barrier layer to a surface treatment process. The surface treatment process includes treating the surface with a reactive... Infineon Technologies Ag

03/01/18 / #20180061666

Method for producing a metal-ceramic substrate with at least one via

A method for producing a metal-ceramic substrate with at least one electrically conductive via, in which one metal layer, respectively, is attached in a planar manner to a ceramic plate or a ceramic layer to each of two opposing surface sides of the ceramic layer is provided. The method includes... Infineon Technologies Ag

03/01/18 / #20180061671

Semiconductor device with plated lead frame

A semiconductor device includes an insulating carrier structure comprised of an insulating inorganic material. The carrier structure has a receptacle in which a semiconductor chip is disposed. The semiconductor chip has a first side, a second side and a lateral rim. The carrier structure laterally surrounds the semiconductor chip and... Infineon Technologies Ag

03/01/18 / #20180061695

Method for processing a wafer and processing a carrier

According to various embodiments, a method for processing a wafer may include scanning a focused laser beam over the wafer to form a defect structure within the wafer, the defect structure defining a first region of the wafer located at a first side of the defect structure and a second... Infineon Technologies Ag

03/01/18 / #20180061742

Semiconductor devices and methods for forming a semiconductor device

A semiconductor device includes an electrically conductive contact pad structure. Moreover, the semiconductor device includes a bond structure. The bond structure is in contact with the electrically conductive contact pad structure at least at an enclosed interface region. Additionally, the semiconductor device includes a degradation prevention structure laterally surrounding the... Infineon Technologies Ag

03/01/18 / #20180061756

One time programmable memory cell and memory array

Memory cells and corresponding memory arrays are provided. The memory cell comprises a fusable element and a bipolar transistor arranged adjacent to the fusable element.... Infineon Technologies Ag

03/01/18 / #20180061962

Method for producing a doped semiconductor layer

A semiconductor device is produced by providing a semiconductor substrate, forming an epitaxial layer on the semiconductor substrate, and introducing dopant atoms of a first doping type and dopant atoms of a second doping type into the epitaxial layer.... Infineon Technologies Ag

03/01/18 / #20180061971

Transistor device with high current robustness

A transistor device includes a first emitter region of a first doping type, a second emitter region of a second doping type, a body of the second doping type, a drift region of the first doping type, a field-stop region of the first doping type, at least one boost structure,... Infineon Technologies Ag

03/01/18 / #20180062657

Level shifter and operating the same

In various embodiments, a level shifter is provide. The level shifter includes a low supply voltage terminal, a high supply voltage terminal, at least one input terminal, at least one output terminal, and a latch. The latch is configured: to store a predetermined logic state by setting a storage node... Infineon Technologies Ag

03/01/18 / #20180062662

Phase-locked loop

Phase-locked loop devices are provided where a correction factor is determined based on a correlation using a linear controller.... Infineon Technologies Ag

03/01/18 / #20180062768

Integrated rf circuit with phase-noise test capability technical field

An integrated circuit is described herein. According to one or more embodiments, the integrated circuit includes a local oscillator with a voltage-controlled oscillator (VCO) that generates a local oscillator signal. Further, the integrated circuit includes a frequency divider coupled to the VCO downstream thereof. The frequency divider provides a frequency-divided... Infineon Technologies Ag

03/01/18 / #20180063425

Method for generating a high-resolution depth image and an generating a high-resolution depth image

A method for generating a high-resolution depth image includes providing at least a first low-resolution raw image. Furthermore, the method includes providing at least one high-resolution raw image. A resolution of the high-resolution raw image is higher than a resolution of the first low-resolution raw image. Furthermore, the method includes... Infineon Technologies Ag

Patent Packs
03/01/18 / #20180063644

Digital silicon microphone with configurable sensitivity, frequency response and noise transfer function

In some embodiments, a microphone system includes a multi-bit delta-sigma modulator configured to be coupled to a microphone and configured to covert an output of the microphone into a first digital signal with a multi-bit resolution at a first output of the multi-bit delta-sigma modulator. The microphone system also includes... Infineon Technologies Ag

02/22/18 / #20180052042

Acoustic wave sensor

An acoustic wave sensor may include: a continuous membrane deflectable by acoustic waves to be detected, and a piezoelectric layer provided on the membrane and including a plurality of piezoelectric layer portions respectively equipped with at least two individual electric contact structures configured to electrically connect the respective piezoelectric layer... Infineon Technologies Ag

02/22/18 / #20180052209

Sensor arrangement having thermo-emf compensation

Sensor arrangement providing a signal responsive to a temperature difference between a Hall-effect device output contact and a reference point, having first contact tub located near an external surface of a Hall effect region; second contact tub located near the reference point; first conductor element comprising first and second end... Infineon Technologies Ag

02/22/18 / #20180052479

Integrated circuit with an amplifier mosfet

In accordance with an embodiment, an integrated circuit includes a substrate, an amplifier MOSFET, and a bias voltage terminal configured to generate a potential difference of the substrate relative to at least one load terminal of the amplifier MOSFET.... Infineon Technologies Ag

02/22/18 / #20180052626

Memory having different reliabilities

The disclosure proposes a circuit including a memory which has a multiplicity of memory cells, the memory having a first area and a second area, at least one memory cell comprising a part of the first area and a part of the second area, the first area having a lower... Infineon Technologies Ag

02/22/18 / #20180053663

Semiconductor component, processing a substrate and producing a semiconductor component

In various embodiments, a method is provided. The method includes forming a metallization layer above at least one first region of a substrate. After forming the metallization layer at least one second region of the substrate is free of the metallization layer. The method further includes forming a barrier layer... Infineon Technologies Ag

02/22/18 / #20180053822

Soi island in a power semiconductor device

A power semiconductor device includes a semiconductor-on-insulator island having a semiconductor region and an insulation structure, the insulation structure being formed by an oxide and separating the semiconductor region from a portion of a semiconductor body of the power semiconductor device. The insulation structure includes a sidewall that laterally confines... Infineon Technologies Ag

02/22/18 / #20180053841

Semiconductor device with a source trench electrode

A semiconductor device includes a body region arranged between source and drift regions in a semiconductor body. A gate trench extends from a first surface of the semiconductor body, through the source and body regions and into the drift region. A diode region extends under the gate trench, and a... Infineon Technologies Ag

02/22/18 / #20180054200

Differential logic with low voltage supply

In accordance with an embodiment, a method includes receiving a first differential logic signal using a first branch of a circuit that extends from a voltage supply of the circuit as far as an earth terminal of the circuit and has at least one first differential transistor pair, receiving a... Infineon Technologies Ag

02/15/18 / #20180045810

Method and device for processing radar signals

A method is suggested for processing radar signals in a processing stage, the method comprising: (i) determining FFT results at a first precision, and (ii) storing a first group of the FFT results at a second precision, wherein the second precision is lower than the first precision. Also, a device... Infineon Technologies Ag

02/15/18 / #20180047458

Non-volatile memory testing

Devices, systems and methods are provided which comprise testing of a non-volatile memory concurrently during at least a part of a testing of other system parts by a processor (11).... Infineon Technologies Ag

02/15/18 / #20180047619

Method of manufacturing a template wafer

A method for manufacturing a semiconductor device includes providing a carrier wafer; and forming a semiconductor device layer on the carrier wafer. After front side processing of the semiconductor device layer, the carrier wafer is removed by cutting along a plane which is parallel to the semiconductor device layer.... Infineon Technologies Ag

02/15/18 / #20180047815

Metallization and its use in, in particular, an igbt or a diode

A vertical power semiconductor component includes a semiconductor chip, the semiconductor chip having a top main surface and a bottom main surface. Each of said top main surface and said bottom main surface is in a heat exchanging relationship with a top metallization layer and a bottom metallization each of... Infineon Technologies Ag

02/15/18 / #20180047893

Hall effect device

A hall effect device includes an active Hall region in a semiconductor substrate, and at least four terminal structures, each terminal structure including a switchable supply contact element and a sense contact element, wherein each supply contact element includes a transistor element with a first transistor terminal, a second transistor... Infineon Technologies Ag

02/08/18 / #20180041134

Apparatus for converting an electrical power of an electromagnetic wave into a dc electrical voltage signal

According to one embodiment, an apparatus for converting the electrical power of an electromagnetic wave into a DC electrical voltage signal is disclosed, the apparatus comprising a signal input region for receiving the electromagnetic wave, a signal output region for providing the DC electrical voltage signal, and a first conversion... Infineon Technologies Ag

02/08/18 / #20180036755

Liquid-dispensing system, apparatus and method

A liquid-dispensing system includes at least one nozzle configured to dispense a liquid. The liquid-dispensing system includes at least one sensor module, configured to provide a sensor signal comprising information related to whether liquid is dispensed by the at least one nozzle. At least a part of the at least... Infineon Technologies Ag

02/08/18 / #20180038915

Battery monitoring using a redundant neighbor measurement

In one example, a circuit includes a first integrated circuit and a second integrated circuit. The first integrated circuit is configured to detect a first battery voltage that is associated with a first battery cell and output a representation of the first battery voltage. The first integrated circuit is further... Infineon Technologies Ag

02/08/18 / #20180039508

Safety hypervisor function

The disclosure relates to systems and methods for defining a processor safety privilege level for controlling a distributed memory access protection system. More specifically, a safety hypervisor function for accessing a bus in a computer processing system includes a module, such as a Computer Processing Unit (CPU) or a Direct... Infineon Technologies Ag

02/08/18 / #20180040504

Devices with backside metal structures and methods of formation thereof

A method of fabricating a semiconductor device includes forming trenches filled with a sacrificial material. The trenches extend into a semiconductor substrate from a first side. An epitaxial layer is formed over the first side of the semiconductor substrate and the trenches. From a second side of the semiconductor substrate... Infineon Technologies Ag

02/08/18 / #20180040530

Die attach methods and semiconductor devices manufactured based on such methods

A semiconductor device includes a carrier, a semiconductor die and a die attach material arranged between the carrier and the semiconductor die. A fillet height of the die attach material is less than about 95% of a height of the semiconductor die. A maximum extension of the die attach material... Infineon Technologies Ag

02/08/18 / #20180040537

Package with partially encapsulated cooling channel for cooling an encapsulated chip

A power module which comprises a semiconductor chip, at least one cooling plate with at least one cooling channel thermally coupled to the semiconductor chip and being configured so that a coolant is guidable through the at least one cooling channel, and an encapsulant encapsulating at least part of the... Infineon Technologies Ag

02/08/18 / #20180040573

Chip carrier and method thereof

A method may include providing a chip carrier having a chip supporting region to support a chip, and a chip contacting region having at least one contact pad, the chip carrier being thinner in the chip contacting region such that a first thickness of the chip carrier at the at... Infineon Technologies Ag

02/08/18 / #20180040691

Semiconductor devices with steep junctions and methods of manufacturing thereof

Crystal lattice vacancies are generated in a pretreated section of a semiconductor layer directly adjoining a process surface. Dopants are implanted at least into the pretreated section. A melt section of the semiconductor layer is heated by irradiating the process surface with a laser beam activating the implanted dopants at... Infineon Technologies Ag

02/08/18 / #20180040926

Indirect battery pressure measurement

Embodiments described herein relate to a battery cells and methods for measuring internal pressure in a battery cell. According to one embodiment, a battery cell includes an interior space, in which a battery electrolyte resides, and a housing that gas-tightly encloses the interior space. The battery cell further includes a... Infineon Technologies Ag

02/08/18 / #20180041115

Modulated power supply

Devices and methods are provided related to modulated power supplies. The device includes an inductor. When a load is to be supplied with power, a terminal of the inductor is coupled to the load. When the load is not to be supplied with power, terminals of the inductor may be... Infineon Technologies Ag

02/08/18 / #20180041150

Detecting brushfire in power systems

In some examples, a detection circuit is configured to detect a brushfire in a power system based on an electrical signal from the power system. The detection circuit is further configured to set a bit in response to detecting the brushfire.... Infineon Technologies Ag

02/08/18 / #20180041241

Radio frequency wearable device

A radio frequency (RF) system includes an RF integrated circuit (IC) die. The RF IC die includes a first transmit circuit, a second transmit circuit, a first receive circuit, a second receive circuit, and a control circuit coupled to the first transmit circuit, the second transmit circuit, the first receive... Infineon Technologies Ag








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