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Infineon Technologies Americas Corp patents


Recent patent applications related to Infineon Technologies Americas Corp. Infineon Technologies Americas Corp is listed as an Agent/Assignee. Note: Infineon Technologies Americas Corp may have other listings under different names/spellings. We're not affiliated with Infineon Technologies Americas Corp, we're just tracking patents.

ARCHIVE: New 2018 2017 2016 2015 2014 2013 2012 2011 2010 2009 | Company Directory "I" | Infineon Technologies Americas Corp-related inventors


Input/output pins for chip-embedded substrate

Input/output pins for a chip-embedded substrate may be fabricated by applying a contact-distinct volume of solder to at least two contacts that are recessed within the chip-embedded substrate, temperature-cycling the chip-embedded substrate to induce solder reflow and define an input/output pin for each one of the at least two contacts,... Infineon Technologies Americas Corp

Multi-phase common contact package

In some examples, a device includes a first leadframe segment and a second leadframe segment, wherein the second leadframe segment is electrically isolated from the first leadframe segment. The device further includes at least four transistors comprising at least two high-side transistors electrically connected to the first leadframe segment and... Infineon Technologies Americas Corp

Common contact leadframe for multiphase applications

In some examples, a device includes an input leadframe segment and a reference leadframe segment that is electrically isolated from the input leadframe segment. The device further includes at least four transistors comprising at least two high-side transistors that are electrically connected to the input leadframe segment and at least... Infineon Technologies Americas Corp

Multi-phase power converter with common connections

In some examples, a device comprises at least two semiconductor die, wherein each respective semiconductor die of the at least two semiconductor die comprises at least two power transistors, an input node on a first side of the respective semiconductor die, a reference node on the first side of the... Infineon Technologies Americas Corp

Semiconductor device package having solder-mounted conductive clip on leadframe

A conductive clip for a semiconductor device package. In one example, the conductive clip may include a number of protrusions that extend from a surface of the conductive clip that in practice is solder-mounted to a leadframe of the semiconductor device package. In another example, the conductive clip may include... Infineon Technologies Americas Corp

Group iii-v device structure with variable impurity concentration

A semiconductor structure includes a substrate, a transition body over the substrate, a group III-V intermediate body having a bottom surface over the transition body and a group III-V device layer over a top surface of the group III-V intermediate body. The group III-V intermediate body has a first impurity... Infineon Technologies Americas Corp

Semiconductor structure having graded transition bodies

A semiconductor structure includes a substrate, a first graded transition body over the substrate a second transition body and a III-Nitride semiconductor layer over the second transition body. The first graded transition body has a first lattice parameter at a first surface and a second lattice parameter at a second... Infineon Technologies Americas Corp

Electrical connectivity of die to a host substrate

According to example configurations herein, an apparatus comprises a die and a host substrate. The die can include a first transistor and a second transistor. A surface of the die includes multiple conductive elements disposed thereon. The multiple conductive elements on the surface are electrically coupled to respective nodes of... Infineon Technologies Americas Corp

Package for die-bridge capacitor

In some examples, a device comprises a first leadframe segment, a second leadframe segment, and a first transistor, wherein the first transistor is electrically connected to the first leadframe segment. The device further comprises a second transistor, wherein the second transistor is electrically connected to the second leadframe segment. The... Infineon Technologies Americas Corp

Magnetic sensor used for lf communication in tpms application

A tire pressure monitoring system (TPMS) sensor and a communication method are provided. The TPMS sensor includes a microcontroller unit, a pressure sensor electrically connected to the microcontroller unit and configured to measure an internal air pressure of a tire and a receiver electrically connected to the microcontroller unit and... Infineon Technologies Americas Corp

Single-sided power device package

In some examples, a circuit package further includes an insulating layer and a first transistor extending through the insulating layer, where the first transistor includes a first control terminal on a top side of the insulating layer, a first source terminal on the top side of the insulating layer, and... Infineon Technologies Americas Corp

Power switch packaging with pre-formed electrical connections for connecting inductor to one or more transistors

In some examples, device includes an integrated circuit (IC) inside a first insulating layer, an inductor, and a second insulating layer arranged between the first insulating layer and the inductor. The first insulating layer shares an interface with the second insulating layer, and the inductor is attached to the second... Infineon Technologies Americas Corp

Powerstage attached to inductor

In some examples, a device comprises an inductor and a package comprising at least one power device. The package is attached to the inductor by an adhesion layer, and the inductor comprises one or more leads. A first lead of the one or more leads is configured to conduct electricity... Infineon Technologies Americas Corp

Power converter with at least five electrical connections on a side

In some examples, a device comprises an integrated circuit comprising a first transistor and a second transistor. The device further comprises an inductor comprising a first inductor terminal and a second inductor terminal, wherein the first inductor terminal is electrically connected to the first transistor and the second transistor. The... Infineon Technologies Americas Corp

Semiconductor devices and methods for forming a semiconductor device

A semiconductor device includes a crack propagation prevention structure. The crack propagation prevention structure is located at an edge region of a wiring layer stack located on a semiconductor substrate of the semiconductor device. Furthermore, the crack propagation prevention structure laterally surrounds at least one wiring structure located within the... Infineon Technologies Americas Corp

Cross-coupled, narrow pulse, high voltage level shifting circuit with voltage domain common mode rejection

A system for high voltage level shifting includes a level shifting circuit having a high side circuit that receives a mixed signal having a common mode signal and a differential mode signal, and to attenuate the common mode signal in the mixed signal to generate an adjusted signal. The high... Infineon Technologies Americas Corp

Semiconductor package with conductive clip

A semiconductor package that includes a conductive can, a power semiconductor device electrically and mechanically attached to the inside surface of the can, and an IC semiconductor device copackaged with the power semiconductor device inside the can.... Infineon Technologies Americas Corp

Semiconductor device having a superjunction structure

A semiconductor device includes a drift region of a first conductivity type, an anode region of a second conductivity type situated below the drift region, an inversion region of the second conductivity type situated above the drift region, an enhancement region of the first conductivity type situated between the drift... Infineon Technologies Americas Corp

Compact high-voltage semiconductor package

There are disclosed herein various implementations of a compact high-voltage semiconductor package. In one exemplary implementation, such a semiconductor package includes a power transistor, as well as a drain contact, a source contact, and a gate contact to provide external connections to the power transistor. The semiconductor package also includes... Infineon Technologies Americas Corp

Schottky integrated high voltage terminations and related hvic applications

A Schottky diode includes a cathode terminal in a high voltage region of a semiconductor die, an anode terminal in a low voltage region of the semiconductor die, where the anode terminal and the cathode terminal are separated by a junction isolation termination situated between the high voltage region and... Infineon Technologies Americas Corp

Low dislocation density iii-nitride semiconductor component

There are disclosed herein various implementations of a semiconductor component including a protrusion propagation body. The semiconductor component includes a substrate, a III-Nitride intermediate stack including the protrusion propagation body situated over the substrate, a III-Nitride buffer layer situated over the group III-V intermediate stack, and a III-Nitride device fabricated... Infineon Technologies Americas Corp

Charge trapping prevention iii-nitride transistor

There are disclosed herein various implementations of a charge trapping prevention III-Nitride transistor. Such a transistor may be a III-Nitride high electron mobility transistor (HEMT) including a III-Nitride intermediate body situated over a substrate, a channel layer situated over the III-Nitride intermediate body, and a barrier layer situated over the... Infineon Technologies Americas Corp

Compact chireix combiner and impedance matching circuit

A power amplifier includes an outphasing amplifier. The outphasing amplifier includes a first amplifier and a second amplifier, and is configured to provide a first amplified RF signal and a second amplified RF signal that is phase shifted from the first amplified RF signal. The power amplifier further includes an... Infineon Technologies Americas Corp

Combined gate trench and contact etch process and related structure

A method of forming a semiconductor device, the method comprises forming a gate trench and a contact trench concurrently in a semiconductor substrate using a patterned masking layer, forming a gate conductive filler in the gate trench, forming a deep body region below the contact trench, and forming a contact... Infineon Technologies Americas Corp

Semiconductor package including flip chip mounted ic and vertically integrated inductor

In one implementation, a semiconductor package includes an integrated circuit (IC) flip chip mounted on a first patterned conductive carrier, a second patterned conductive carrier situated over the IC, and a magnetic material situated over the second patterned conductive carrier. The semiconductor package also includes a third patterned conductive carrier... Infineon Technologies Americas Corp

Method of fabricating a power semiconductor device

Disclosed is a power device, such as power MOSFET, and method for fabricating same. The device includes an upper trench situated over a lower trench, where the upper trench is wider than the lower trench. The device further includes a trench dielectric inside the lower trench and on sidewalls of... Infineon Technologies Americas Corp

Semiconductor device having a cavity

A power semiconductor device includes a semiconductor substrate having a drift region, a gate electrode trench in the semiconductor substrate and a field electrode needle trench in the semiconductor substrate. The gate electrode trench extends into the drift region and includes a gate electrode. The gate electrode is arranged in... Infineon Technologies Americas Corp

Bulk capacitor switching for power converters

In one example, a circuit includes a voltage rail, a reference node, a first capacitor, and a capacitor module. The first capacitor is coupled to the voltage rail and to the reference node. The capacitor module includes a second capacitor and a switching unit. The switching unit is configured to... Infineon Technologies Americas Corp

Adaptable molded leadframe package and related method

A semiconductor package includes at least one semiconductor device situated on a leadframe island, a first at least one lead protruding from a first side of the semiconductor package and configured to provide a first electrical connection to at least one terminal of the at least one semiconductor device, a... Infineon Technologies Americas Corp

Surface mount device package having improved reliability

A semiconductor package for mounting to a printed circuit board (PCB) includes a case comprising a ceramic base, a semiconductor die in the case, a mounting pad under the ceramic base and coupled to the semiconductor die through at least one opening in the ceramic base. The mounting pad includes... Infineon Technologies Americas Corp

Single-chip high speed and high voltage level shifter

A semiconductor device includes a low voltage region, a high voltage region monolithically integrated with the low voltage region in a semiconductor substrate, where the low voltage region is electrically coupled to the high voltage region through a capacitive isolation barrier, where the high voltage region is structurally isolated from... Infineon Technologies Americas Corp

Bipolar semiconductor device having localized enhancement regions

There are disclosed herein various implementations of a bipolar semiconductor device having localized enhancement regions. Such a bipolar semiconductor device includes a drift region having a first conductivity type situated over an anode layer having a second conductivity type opposite the first conductivity type. The bipolar semiconductor device also includes... Infineon Technologies Americas Corp

Bipolar semiconductor device with sub-cathode enhancement regions

There are disclosed herein various implementations of a bipolar semiconductor device with sub-cathode enhancement regions. Such a bipolar semiconductor device includes a drift region having a first conductivity type situated over an anode layer having a second conductivity type opposite the first conductivity type. The bipolar semiconductor device also includes... Infineon Technologies Americas Corp

Bipolar semiconductor device with multi-trench enhancement regions

There are disclosed herein various implementations of a bipolar semiconductor device with multi-trench enhancement regions. Such a bipolar semiconductor device includes a drift region having a first conductivity type situated over an anode layer having an opposite, second conductivity type. The device also includes a first control trench extending through... Infineon Technologies Americas Corp

Semiconductor component including aluminum silicon nitride layers

There are disclosed herein various implementations of a semiconductor component including one or more aluminum silicon nitride layers. The semiconductor component includes a substrate, a group III-V intermediate body situated over the substrate, a group III-V buffer layer situated over the group III-V intermediate body, and a group III-V device... Infineon Technologies Americas Corp

08/31/17 / #20170250127

Semiconductor package having multi-phase power inverter with internal temperature sensor

According to an exemplary implementation, a semiconductor package includes a multi-phase power inverter having power switches and situated on a leadframe of the semiconductor package. The semiconductor package further includes a temperature sensor situated on the leadframe, where the temperature sensor is configured to generate a sensed temperature of the... Infineon Technologies Americas Corp

08/17/17 / #20170236771

Method of forming a reliable and robust electrical contact

In one implementation, a reliable and robust electrical contact includes a contact pad patterned from a first metal layer situated over a surface of an active die, and multiple dielectric islands situated over the contact pad. The dielectric islands are spaced apart from one another by respective segments of a... Infineon Technologies Americas Corp

08/10/17 / #20170229383

Power quad flat no-lead (pqfn) package in a single shunt inverter circuit

According to an exemplary implementation, a power quad flat no-lead (PQFN) package includes a driver integrated circuit (IC) situated on a leadframe. The PQFN package further includes low-side U-phase, low-side V-phase, and low-side W-phase power switches situated on the leadframe. A logic ground of the leadframe is coupled to a... Infineon Technologies Americas Corp

08/10/17 / #20170229548

Semiconductor component with a multi-layered nucleation body

There are disclosed herein various implementations of a semiconductor component with a multi-layered nucleation body and method for its fabrication. The semiconductor component includes a substrate, a nucleation body situated over the substrate, and a group III-V semiconductor device situated over the nucleation body. The nucleation body includes a bottom... Infineon Technologies Americas Corp

08/03/17 / #20170221798

Compact multi-die power semiconductor package

One disclosed implementation is a power semiconductor package including a sync transistor having a drain on its top surface and a source and a gate on its bottom surface. The source of the sync transistor is configured for attachment to a first partially etched leadframe segment and the gate of... Infineon Technologies Americas Corp

08/03/17 / #20170222002

Semiconductor device structure for improved performance and related method

A semiconductor device includes a vertical gate electrode in a gate trench in a semiconductor substrate, and a lateral gate electrode over the semiconductor substrate and adjacent the gate trench, where the lateral gate electrode results in improved electrical performance of the semiconductor device. The improved electrical performance includes an... Infineon Technologies Americas Corp

07/27/17 / #20170213909

Method for fabricating a shallow and narrow trench fet

According to an embodiment of a method for fabricating a trench field-effect transistor (trench FET), the method includes: forming a trench in a semiconductor substrate of a first conductivity type, the trench including sidewalls which taper from a wider, top portion of the trench to a narrower, bottom portion of... Infineon Technologies Americas Corp

07/13/17 / #20170200799

Combined gate and source trench formation and related structure

A semiconductor device includes a gate trench in a semiconductor substrate, a source trench in the semiconductor substrate, the source trench having a first portion and a second portion under the first portion, where the first portion of the source trench is wider than the gate trench, and extends to... Infineon Technologies Americas Corp

07/06/17 / #20170192060

Enhanced protection, diagnosis, and control of power distribution and control units

Systems, devices, methods, and techniques are disclosed for performing calibrated measurements of current through switches in an electronic control unit. In one example, a device includes a current sensor system; a controller, operably connected to the current sensor system; and one or more switches, operably connected to the controller. The... Infineon Technologies Americas Corp

06/29/17 / #20170186861

Method of forming a semiconductor structure having integrated snubber resistance

A semiconductor structure is disclosed. The semiconductor structure includes a source trench in a drift region, the source trench having a source trench dielectric liner and a source trench conductive filler surrounded by the source trench dielectric liner, a source region in a body region over the drift region. The... Infineon Technologies Americas Corp

06/22/17 / #20170179824

Current sensing in a power supply

During operation, a protection circuit receives an input voltage representative of current delivered by a power supply phase to a load. In one configuration, the input voltage is received as the voltage across respective drain-source nodes of a synchronous switch (low side switch) disposed in a power supply. The protection... Infineon Technologies Americas Corp

06/15/17 / #20170170718

Power converter with tank circuit and over-voltage protection

In one implementation, a power converter with over-voltage protection includes a power switch coupled to a power supply through a tank circuit, and a control circuit coupled to a gate of the power switch. The control circuit is configured to turn the power switch OFF based on a current from... Infineon Technologies Americas Corp

06/01/17 / #20170154970

Buried bus and related method

A semiconductor structure includes a semiconductor substrate having a gate electrode in a gate trench, a buried bus in the semiconductor substrate, the buried bus having a bus conductive filler in a bus trench, where the bus conductive filler is electrically coupled to the gate electrode. The bus conductive filler... Infineon Technologies Americas Corp

06/01/17 / #20170154989

Methods of manufacturing gallium nitride devices

Gallium nitride material devices and methods associated with the same. In some embodiments, the devices may be transistors which include a conductive structure connected to a source electrode. The conductive structure may form a source field plate which can be formed over a dielectric material and can extend in the... Infineon Technologies Americas Corp

05/25/17 / #20170148692

Semiconductor package including a semiconductor die having redistributed pads

A semiconductor package that includes a semiconductor die, an insulation around the die, and a conforming conductive pad coupled to an electrode of the die.... Infineon Technologies Americas Corp

05/18/17 / #20170141192

Group iii-v device structure having a selectively reduced impurity concentration

There are disclosed herein various implementations of a semiconductor structure and method. The semiconductor structure comprises a substrate, a transition body over the substrate, and a group III-V intermediate body having a bottom surface over the transition body. The semiconductor structure also includes a group III-V device layer over a... Infineon Technologies Americas Corp

05/11/17 / #20170133986

Methods and circuitry to trim common mode transient control circuitry

Embodiments herein include a replica communication path and monitor circuit to provide increased common mode transient immunity. As its name suggests, the monitor circuit monitors the replica communication path and produces an adjustment signal (common mode transient adjustment signal) to cancel presence of a common mode transient signal in one... Infineon Technologies Americas Corp

04/27/17 / #20170117213

Semiconductor package with integrated die paddles for power stage

In one implementation, a semiconductor package includes a first conductive carrier including a first die paddle of the semiconductor package, and a control transistor having a drain attached to the first die paddle. The semiconductor package also includes a second conductive carrier attached to the first conductive carrier and including... Infineon Technologies Americas Corp

03/30/17 / #20170092611

Porous metallic film as die attach and interconnect

One exemplary disclosed embodiment comprises a sintered porous metallic film as a die attach mechanically connecting a backside of a semiconductor die to a substrate of a package. Another exemplary disclosed embodiment comprises a sintered porous metallic film as an electrical connection between an electrode on an active surface of... Infineon Technologies Americas Corp

03/16/17 / #20170076937

Method of fabricating iii-nitride semiconductor dies

According to an embodiment of a method of fabricating III-Nitride semiconductor dies, the method includes: growing a III-Nitride body over a group IV substrate in a semiconductor wafer; forming at least one device layer over the III-Nitride body; etching grid array trenches in the III-Nitride body and in the group... Infineon Technologies Americas Corp

03/09/17 / #20170069578

Ultra-thin semiconductor component fabrication using a dielectric skeleton structure

In one implementation, a method for forming ultra-thin semiconductor components includes fabricating multiple devices including a first device and a second device in a semiconductor wafer, and forming a street trench within the semiconductor wafer and between the first and second devices. The method continues with forming a dielectric skeleton... Infineon Technologies Americas Corp

03/02/17 / #20170062395

Semiconductor package with integrated semiconductor devices and passive component

According to one exemplary embodiment, a semiconductor package includes a substrate having lower and upper surfaces. The semiconductor package further includes at least one passive component coupled to first and second conductive pads on the upper surface of the substrate. The semiconductor package further includes at least one semiconductor device... Infineon Technologies Americas Corp

03/02/17 / #20170063235

Power supply circuitry and adaptive transient control

A control circuitry can be configured to receive an error signal indicating a difference between an output voltage of the power supply and a desired setpoint for the output voltage. According to one configuration, depending on the error signal, the control circuitry initiates switching between operating the control circuitry in... Infineon Technologies Americas Corp

03/02/17 / #20170063250

Power converter package with integrated output inductor

In one implementation, a semiconductor package includes a first patterned conductive carrier including partially etched segments. The semiconductor package also includes a control FET having a control drain attached to a first partially etched segment of the first patterned conductive carrier. In addition, the semiconductor package includes a sync FET... Infineon Technologies Americas Corp

02/16/17 / #20170047228

Method of fabricating an electrical contact for use on a semiconductor device

According to one disclosed embodiment, an electrical contact for use on a semiconductor device comprises an electrode stack including a plurality of metal layers and a capping layer formed over the plurality of metal layers. The capping layer comprises a refractory metal nitride. In one embodiment, a method for fabricating... Infineon Technologies Americas Corp

02/16/17 / #20170047407

Semiconductor material having a compositionally-graded transition layer

The invention provides semiconductor materials including a gallium nitride material layer formed on a silicon substrate and methods to form the semiconductor materials. The semiconductor materials include a transition layer formed between the silicon substrate and the gallium nitride material layer. The transition layer is compositionally-graded to lower stresses in... Infineon Technologies Americas Corp

02/02/17 / #20170032958

Method for cleaning hermetic semiconductor packages

A method for removing undesirable particles from a semiconductor package is disclosed. The method comprises dispensing dry ice into random cavities of the semiconductor package, and removing the undesirable particles from the random cavities using the dry ice, where the dry ice causes the undesirable particles to dislodge from the... Infineon Technologies Americas Corp

01/26/17 / #20170025319

Robust high performance semiconductor package

A semiconductor package includes a suspended substrate having one or more semiconductor devices thereon, a metallic case covering the suspended substrate, the suspended substrate being supported by a plurality of mechanical leads on opposing sides of the semiconductor package, at least one of the plurality of mechanical leads having a... Infineon Technologies Americas Corp

01/12/17 / #20170012533

Voltage converter with vcc-less rdson current sensing circuit

In one implementation, a voltage converter includes a driver providing a gate drive for a power switch and a sense circuit coupled across the power switch. The gate drive provides power to the sense circuit, and the sense circuit provides a sense output to the driver corresponding to a current... Infineon Technologies Americas Corp








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