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Infineon Technologies Austria Ag
Infineon Technologies Austria Ag_20100114
Infineon Technologies Austria Ag_20131212

Infineon Technologies Austria Ag patents


Recent patent applications related to Infineon Technologies Austria Ag. Infineon Technologies Austria Ag is listed as an Agent/Assignee. Note: Infineon Technologies Austria Ag may have other listings under different names/spellings. We're not affiliated with Infineon Technologies Austria Ag, we're just tracking patents.

ARCHIVE: New 2018 2017 2016 2015 2014 2013 2012 2011 2010 2009 | Company Directory "I" | Infineon Technologies Austria Ag-related inventors


 new patent  Temperature sensing and control of resistive heating elements

A method for temperature sensing and control of resistive heating elements includes providing a power signal to a heater, the power signal having pulse width modulated (PWM) power pulses, providing a measurement pulse to the heater, with the measurement pulse being between two PWM power pulses, measuring a voltage across... Infineon Technologies Austria Ag

 new patent  Switching frequency modulation in a switched mode power supply

In accordance with an embodiment, a method includes driving at least one electronic switch coupled to at least one inductor in a converter stage of a switched mode power supply based on a clock signal, and modulating a clock frequency of the clock signal over a predefined first frequency range... Infineon Technologies Austria Ag

 new patent  Electronic drive circuit

According to an embodiment of an electronic circuit, the electronic circuit includes a first input pin, a second input pin, an output pin, a control circuit and an output circuit. The first input pin is configured to receive a first input signal that includes an enable information and at least... Infineon Technologies Austria Ag

Method of manufacturing a semiconductor power package

A method of manufacturing a semiconductor power package includes: providing a pre-molded chip housing and an electrically conducting chip carrier cast-in-place in the pre-molded chip housing; bonding a power semiconductor chip on the electrically conducting chip carrier; and applying a covering material so as to embed the power semiconductor chip.... Infineon Technologies Austria Ag

System and a current controller

In accordance with an embodiment of the present invention, a method of controlling current through a transistor includes measuring a voltage across the transistor, measuring a current through the transistor, determining a safe operating current for the measured voltage across the transistor, and adjusting a voltage of a control node... Infineon Technologies Austria Ag

Power converter damage protection

In one example, a method includes activating, by a controller of a power converter, a switch of the power converter that controls an amount of energy provided by the power converter; receiving, by an input of the controller, a signal that represents an amount of current flowing through the switch;... Infineon Technologies Austria Ag

System and an overpower detector

A system and method for an overcurrent detector includes a device. The device includes a threshold generation circuit, and an overpower determination circuit. The threshold generation circuit is configured to produce a threshold value based on an output of a temperature sensor proximate to a power transistor, and a maximum... Infineon Technologies Austria Ag

Switched mode power converter with peak current control

In accordance with an embodiment, a method, includes operating a power converter that comprises an electronic switch connected in series with an inductor in one of a first operation mode and a second operation mode. Operating the power converter in each of the first operation mode and the second operation... Infineon Technologies Austria Ag

Dac controlled low power high output current source

This disclosure describes a precise, fast, and relatively low power current-source for use in various applications, which may include driving power semiconductors such power MOSFETs and IGBTs. The current-source may provide both a constant current and a current profile over time which may charge and discharge the steering terminal (e.g.... Infineon Technologies Austria Ag

Semiconductor device with first and second field electrode structures

A semiconductor device includes first and second field electrode structures that extend from a first surface into a semiconductor portion. The first field electrode structures include a first field dielectric insulating spicular first field electrodes against the semiconductor portion. The second field electrode structures include a second field dielectric insulating... Infineon Technologies Austria Ag

Semiconductor device

A semiconductor device includes a semiconductor body including a base region and two semiconductor mesas separated from each other by an insulated trench gate structure extending from a first side into the base region, and including a dielectric layer separating a gate electrode from the semiconductor body. Each semiconductor mesa... Infineon Technologies Austria Ag

Methods for producing semiconductor devices

A method for producing a semiconductor device in accordance with various embodiments may include providing a semiconductor workpiece attached to a first carrier; dicing the semiconductor workpiece and the carrier so as to form at least one individual semiconductor chip; mounting the at least one semiconductor chip with a side... Infineon Technologies Austria Ag

Power limiting for flyback converter

A controller of a power converter is described that after switching-on a primary switch of a power converter, detects a voltage that is indicative of a primary current through the primary switch and responsive to determining that the voltage exceeds a direct-current (DC) voltage threshold, switches-off the primary switch. The... Infineon Technologies Austria Ag

Switch device

Devices and methods are provided where a control terminal resistance of a transistor device is set depending on operating conditions within a specified range of operating conditions.... Infineon Technologies Austria Ag

Semiconductor chip package having a repeating footprint pattern

A semiconductor chip package includes a semiconductor chip disposed over a main surface of a carrier. An encapsulation body encapsulates the chip. First electrical contact elements are electrically coupled to the chip and protrude out of the encapsulation body through a first side face of the encapsulation body. Second electrical... Infineon Technologies Austria Ag

Semiconductor lithography alignment feature with epitaxy blocker

A type III-V semiconductor substrate is provided. Semiconductor material is removed from the type III-V semiconductor substrate such that the type III-V semiconductor substrate comprises one or more alignment features extending away from a main lateral surface. Each of the alignment features includes a first lateral surface that is vertically... Infineon Technologies Austria Ag

Charge compensation semiconductor devices

A field-effect semiconductor device includes a semiconductor body having a first semiconductor region of a first conductivity type, a first side, an edge delimiting the semiconductor body in a direction substantially parallel to the first side, an active area, and a peripheral area arranged between the active area and the... Infineon Technologies Austria Ag

Transistor device with high avalanche robustness

A transistor device includes drain, source and gate nodes, a plurality of drift and compensation cells each including a drift region of a first doping type and a compensation region of a second doping type complementary to the first doping type, and a control structure connected between the drift region... Infineon Technologies Austria Ag

Semiconductor device including super junction structure

A semiconductor device of an embodiment includes transistor cells in a transistor cell area of a semiconductor body. A super junction structure in the semiconductor body includes a plurality of drift sub-regions and compensation sub-regions of opposite first and second conductivity types, respectively, and alternately arranged along a lateral direction.... Infineon Technologies Austria Ag

Method of manufacturing a superjunction semiconductor device and superjunction semiconductor device

A semiconductor device is manufactured in a semiconductor body of a wafer by forming a mask on a surface of the semiconductor body. The mask has a plurality of first mask openings in a transistor cell area and a mask opening design outside the transistor cell area. The mask opening... Infineon Technologies Austria Ag

Current sensing in an electromagnetic component using an auxiliary winding stub

Many electronic devices, such as voltage converters, motors, etc., include electromagnetic components through which the current flow must be estimated. Such electromagnetic components include transformer windings, motor windings, and other types of inductors. In order to estimate the current through such components with reasonable accuracy and without unnecessary power loss,... Infineon Technologies Austria Ag

Tailored switching of power transistors

A circuit comprises an input terminal configured to receive an input signal. A high-side driver is configured to provide a high-side control signal to a high-side power transistor via a high-side terminal based on the input signal. A low-side driver is configured to provide a low-side control signal to a... Infineon Technologies Austria Ag

Method of manufacturing a semiconductor die

A method of manufacturing a semiconductor die includes: forming a power HEMT (high-electron-mobility transistor) in a III-nitride semiconductor substrate, the power HEMT having a gate, a source and a drain; monolithically integrating a first gate driver HEMT with the power HEMT in the III-nitride semiconductor substrate, the first gate driver... Infineon Technologies Austria Ag

Methods of forming substrate structures and semiconductor components

In an embodiment, a method includes forming an intentionally doped superlattice laminate on a support substrate, forming a Group III nitride-based device having a heterojunction on the superlattice laminate layer, and forming a charge blocking layer between the heterojunction and the superlattice laminate.... Infineon Technologies Austria Ag

Isolated dc-dc voltage converters

A switching voltage converter using an isolated topology includes a transformer for coupling power from an input source to an output load. The transformer must be protected to prevent saturation of its core due to excessive magnetic flux density as the transformer transfers power from its primary side to its... Infineon Technologies Austria Ag

Semiconductor device with drift zone and backside emitter and manufacturing thereof

An epitaxial layer is formed by epitaxy on a base substrate at a front side. From opposite to the front side, at least a portion of the base substrate is removed, wherein the base substrate is completely removed or a remnant base section has a thickness of at most 20... Infineon Technologies Austria Ag

Reverse-blocking igbt having a reverse-blocking edge termination structure

A reverse-blocking IGBT (insulated gate bipolar transistor) includes a plurality of IGBT cells disposed in a device region of a semiconductor substrate, a reverse-blocking edge termination structure disposed in a periphery region of the semiconductor substrate which surrounds the device region, one or more trenches formed in the periphery region... Infineon Technologies Austria Ag

Transistor device with a field electrode that includes two layers

Disclosed is a transistor device and a method for producing a transistor device. The transistor device includes: a source region, a drift region, and a body region arranged between the source region and the drift region; a gate electrode adjacent the body region and dielectrically insulated from the body region... Infineon Technologies Austria Ag

Semiconductor device having a non-depletable doping region

A semiconductor device includes a plurality of compensation regions of a vertical electrical element arrangement, a plurality of drift regions of the vertical electrical element arrangement and a non-depletable doping region. The compensation regions of the plurality of compensation regions are arranged in a semiconductor substrate of the semiconductor device.... Infineon Technologies Austria Ag

Semiconductor devices, electrical devices and methods for forming a semiconductor device

A semiconductor device includes a plurality of compensation regions arranged in a semiconductor substrate of the semiconductor device. The compensation regions of the plurality of compensation regions have a first conductivity type. The semiconductor device also includes a plurality of drift region portions of a drift region of a vertical... Infineon Technologies Austria Ag

Semi-resonant and resonant converters and control

A state machine for a multi-phase voltage converter controls cycle-by-cycle switching of the phases by: entering a first state in which a control signal for the high-side switch is activate and control signals for the low-side and SR (synchronous rectification) switches are deactivate; entering a second state in which the... Infineon Technologies Austria Ag

Semi-resonant power converters and methods of operation

Each phase of a multi-phase voltage converter includes a power stage, passive circuit, synchronous rectification (SR) switch, and control circuit. Each passive circuit couples its power stage to an output node of the voltage converter, and is switchably coupled to ground by the SR switch. The current through the SR... Infineon Technologies Austria Ag

System and a switch transistor driver

In accordance with an embodiment, a method of driving a switching transistor includes receiving an activation signal for the switching transistor and generating a sequence of random values. Upon receipt of the activation signal, a control node of the switching transistor is driven with a drive strength based on a... Infineon Technologies Austria Ag

Method of manufacturing a semiconductor device with a metal-filled groove in a polysilicon gate electrode

A method of manufacturing a semiconductor device includes: forming a trench extending into a semiconductor substrate and a polysilicon gate electrode in the trench; forming a body region of a first conductivity type in the substrate adjacent the trench and a source region of a second conductivity type adjacent the... Infineon Technologies Austria Ag

Adaptive gate driver

A device driver is described that includes an output stage and one or more control components. The output stage is configured to produce a gate driver output for driving a gate terminal of a semiconductor device, the output stage comprising a variable driving capability. The one or more control components... Infineon Technologies Austria Ag

01/18/18 / #20180019132

Method for producing a superjunction device

Disclosed is a method that includes forming a plurality of semiconductor arrangements one above the other. In this method, forming each of the plurality of semiconductor arrangements includes: forming a semiconductor layer; forming a plurality of trenches in a first surface of the semiconductor layer; and implanting dopant atoms of... Infineon Technologies Austria Ag

01/18/18 / #20180019310

Power semiconductor device having a field electrode

A power semiconductor device includes: a semiconductor body for conducting a load current between first and second load terminals; source and channel regions and a drift volume in the semiconductor body; a semiconductor zone in the semiconductor body and coupling the drift volume to the second load terminal, a first... Infineon Technologies Austria Ag

01/11/18 / #20180013344

System and controlling current in a switching regulator

In accordance with an embodiment, a method of operating a switch-mode power supply includes receiving a measurement of a first current of the switch-mode power supply, determining a ripple of the first current based on the received measurement of the first current, determining a maximum current threshold based on a... Infineon Technologies Austria Ag

01/11/18 / #20180013422

Half bridge coupled resonant gate drivers

In accordance with an embodiment, a method of controlling a switch driver includes energizing a first inductor in a first direction with a first energy; transferring the first energy from the first inductor to a second inductor, wherein the second inductor is coupled between a second switch-driving terminal of the... Infineon Technologies Austria Ag

01/04/18 / #20180006147

Method of manufacturing a super junction semiconductor device and super junction semiconductor device

A semiconductor device is manufactured by: i) forming a mask on a process surface of a semiconductor layer, elongated openings of the mask exposing part of the semiconductor layer and extending along a first lateral direction; ii) implanting dopants of a first conductivity type into the semiconductor layer based on... Infineon Technologies Austria Ag

01/04/18 / #20180006560

Method and limiting inrush current during startup of a buck converter

A method of regulating an output voltage of a buck converter during a startup period in which the buck converter is first enabled includes regulating the output voltage of the buck converter to a reference voltage under current-mode control during a first part of the startup period, and regulating the... Infineon Technologies Austria Ag

12/28/17 / #20170373140

Semiconductor device with field dielectric in an edge area

A semiconductor device includes a semiconductor body with transistor cells arranged in an active area and absent in an edge area between the active area and a side surface. A field dielectric adjoins a first surface of the semiconductor body and separates, in the edge area, a conductive structure connected... Infineon Technologies Austria Ag

12/28/17 / #20170373180

Power mosfet semiconductor

A semiconductor device includes a source metallization, a source region of a first conductivity type in contact with the source metallization, a body region of a second conductivity type which is adjacent to the source region. The semiconductor device further includes a first field-effect structure including a first insulated gate... Infineon Technologies Austria Ag

12/28/17 / #20170373608

Power converter including an autotransformer and power conversion method

A power converter circuit includes a chopper circuit configured to receive an input voltage and generate a chopper voltage with an alternating voltage level based on the input voltage, an autotransformer including at least one tap, the autotransformer being coupled to the chopper circuit and configured to generate a tap... Infineon Technologies Austria Ag

12/21/17 / #20170364360

Power tool anti-theft

Techniques are disclosed for providing anti-theft protection for power tools. In one example of the techniques of the disclosure, at least one processor of a power tool receives, from an operator, a command to operate the power tool. In response to receiving the command, the at least one processor determines... Infineon Technologies Austria Ag

12/21/17 / #20170365464

Compound semiconductor substrate and forming a compound semiconductor substrate

A method of forming a compound semiconductor substrate includes providing a crystalline base substrate having a first semiconductor material and a main surface, and forming a first semiconductor layer on the main surface and having a pair of tracks disposed on either side of active device regions. The first semiconductor... Infineon Technologies Austria Ag

12/21/17 / #20170365520

Method for producing an integrated heterojunction semiconductor device

A method of producing a semiconductor component is provided. The method includes providing a silicon substrate having a <111>-surface defining a vertical direction, forming in the silicon substrate at least one electronic component, forming at least two epitaxial semiconductor layers on the silicon substrate to form a heterojunction above the... Infineon Technologies Austria Ag

12/21/17 / #20170365702

High-electron-mobility transistor having a buried field plate

A high-electron-mobility semiconductor device includes: a buffer region having first, second and third cross-sections forming a stepped lateral profile, the first cross-section being thicker than the third cross-section and comprising a first buried field plate disposed therein, the second cross-section interposed between the first and third cross-sections and forming oblique... Infineon Technologies Austria Ag

12/21/17 / #20170366175

Phase shift clock for digital llc converter

The techniques of this disclosure may digitally generate a driver signal with a period (or frequency) at a finer resolution than can be achieved by simply counting clock cycles of a system clock. The driver signal may be configured to trigger based on single output clock signal that may be... Infineon Technologies Austria Ag

12/14/17 / #20170359069

Level shifter circuit

Techniques are disclosed for a level shifter configured to adjust current flow in response to measured current fluctuations due to common mode noise in the level shifter. For example, the level shifter includes a low-side control circuit configured to adjust a first current flowing into a first low-side terminal of... Infineon Technologies Austria Ag

12/14/17 / #20170359897

Chip card module and producing a chip card module

In various embodiments, a chip card module is provided. The chip card module includes a chip card module contact array having six contact pads that are arranged in two rows having three contact pads each in accordance with ISO 7816, and three additional contact pads that are arranged between the... Infineon Technologies Austria Ag

12/07/17 / #20170353114

Power supply regulation and bidirectional flow mode

A power converter circuit includes a transformer. The transformer includes a primary winding and a secondary winding. The power converter circuit uses energy conveyed from the primary winding of the transformer through the secondary winding of the transformer to produce an output voltage to power a load. Control circuitry of... Infineon Technologies Austria Ag

11/30/17 / #20170343491

Method and determining lattice parameters of a strained iii-v semiconductor layer

A multi-layer arrangement of III-V semiconductor layers includes a strained III-V semiconductor layer having a concentration of a constituent element which effects intensity of a conductive channel formed in the multi-layer arrangement. Lattice parameters of the strained III-V semiconductor layer are determined by generating a first scan in a Qx... Infineon Technologies Austria Ag

11/30/17 / #20170345892

Method for forming a power semiconductor device and a power semiconductor device

A method of forming a power semiconductor device includes providing a semiconductor layer of a first conductivity type extending to a first side and having a first doping concentration of first dopants providing majority charge carriers of a first electric charge type in the layer, and forming a deep trench... Infineon Technologies Austria Ag

11/30/17 / #20170345893

Semiconductor devices and methods for forming a semiconductor device

A semiconductor device includes a plurality of compensation regions of a first conductivity type arranged in a semiconductor substrate. The semiconductor device further includes a plurality of drift region portions of a drift region of a vertical electrical element arrangement. The drift region has a second conductivity type. The drift... Infineon Technologies Austria Ag

11/30/17 / #20170345924

Reduced gate charge field-effect transistor

In one implementation, a reduced gate charge field-effect transistor (FET) includes a drift region situated over a drain, a body situated over the drift region, and source diffusions formed in the body. The source diffusions are adjacent a gate trench extending through the body into the drift region and having... Infineon Technologies Austria Ag

11/30/17 / #20170346397

Method and phase current estimation in semi-resonant voltage converters

A resonant or semi-resonant voltage converter includes a synchronous rectification (SR) switch through which a current having a half-cycle sinusoidal-like shape is conducted when the SR switch is active. The current through the SR switch is modelled, and estimates of the SR switch current are generated by a digital estimator... Infineon Technologies Austria Ag

11/23/17 / #20170338306

Method for manufacturing a power semiconductor device

A method for manufacturing a power semiconductor device includes: forming a drift region of a first conductivity type, a second emitter region of a second conductivity type, a pn-junction between the second emitter region and drift region, and a first emitter region having a first doping region of the first... Infineon Technologies Austria Ag

11/23/17 / #20170338338

Semiconductor devices and manufacturing semiconductor devices

A method for manufacturing a semiconductor device includes: forming a recess in a semiconductor substrate, the recess having a bottom and a sidewall extending from the bottom to a first side of the semiconductor substrate; forming an auxiliary structure on the sidewall and the bottom of the recess and forming... Infineon Technologies Austria Ag

11/16/17 / #20170330808

Semiconductor structure having a test structure formed in a group iii nitride layer

In an embodiment, a semiconductor structure includes a support substrate comprising a surface adapted to support epitaxial growth of a Group III nitride, one or more epitaxial Group III nitride layers arranged on the surface and supporting a plurality of transistor devices assembled upon the support substrate, and a test... Infineon Technologies Austria Ag

11/16/17 / #20170330941

Methods for forming semiconductor devices, semiconductor devices and power semiconductor devices

A method for forming a semiconductor device includes forming a first insulation layer on a semiconductor substrate and forming a structured etch stop layer. Further, the method includes depositing a second insulation layer after forming the structured etch stop layer and forming a structured mask layer on the second insulation... Infineon Technologies Austria Ag

11/16/17 / #20170330946

Semiconductor device having a trench gate electrode

A semiconductor device includes a semiconductor substrate comprising a main surface and a gate electrode in a trench between neighboring semiconductor mesas, The gate electrode is electrically insulated from the neighboring semiconductor mesas by a dielectric layer. The semiconductor device further includes a conductor arranged, at least partially, between neighboring... Infineon Technologies Austria Ag

11/16/17 / #20170330964

Semiconductor devices and methods for forming semiconductor devices

A semiconductor device includes an array of needle-shaped trenches extending into a semiconductor substrate. The semiconductor device further includes a gate trench grid extending into the semiconductor substrate. A gate electrode of a transistor structure is located within the gate trench grid. A gate wiring structure of the transistor structure... Infineon Technologies Austria Ag

11/16/17 / #20170331380

Method and phase alignment in semi-resonant power converters

Each phase of a multi-phase voltage converter includes a power stage, passive circuit, synchronous rectification (SR) switch, and control circuit. Each passive circuit couples its power stage to an output node of the voltage converter, and is switchably coupled to ground by the SR switch. The current through the SR... Infineon Technologies Austria Ag

11/16/17 / #20170331383

Llc power converter and switching method thereof

In some embodiments, an inductor-inductor-capacitor (LLC) converter includes a transformer having a primary winding, a secondary winding, and an auxiliary winding. The primary winding is coupled to a primary side circuit and the auxiliary winding has a first winding portion coupled between a first terminal and a middle terminal, and... Infineon Technologies Austria Ag

Patent Packs
11/16/17 / #20170331386

Method and phase alignment in semi-resonant power converters to avoid switching of power switches having negative current flow

Each phase of a multi-phase voltage converter includes a power stage, passive circuit, synchronous rectification (SR) switch, and control circuit. Each passive circuit couples its power stage to an output node of the voltage converter, and is switchably coupled to ground by the SR switch. The current through the SR... Infineon Technologies Austria Ag

11/02/17 / #20170317005

Electronic component having a heat-sink thermally coupled to a heat-spreader

An electronic component includes one or more semiconductor dice embedded in a first dielectric layer, a heat-spreader embedded in a second dielectric layer and a heat-sink thermally coupled to the heat-spreader. The heat-spreader has a higher thermal conductivity in directions substantially parallel to the major surface of the one or... Infineon Technologies Austria Ag

11/02/17 / #20170317582

Voltage doubler for power converters

In one example, a circuit includes an alternating current (AC) voltage source, a voltage rail, a reference rail, a first capacitor, a second capacitor, and a switching unit. The AC voltage source is configured to supply voltage in a first direction during a first half of a cycle and supply... Infineon Technologies Austria Ag

11/02/17 / #20170317594

Bulk capacitor switching for power converters

In one example, a circuit includes a voltage rail, a reference node, a first capacitor, and a capacitor module. The first capacitor is coupled to the voltage rail and to the reference node. The capacitor module includes a second capacitor and a switching unit. The switching unit is configured to... Infineon Technologies Austria Ag

11/02/17 / #20170317595

Method and efficient switching in semi-resonant power converters

A voltage converter includes a power stage, a passive circuit, a synchronous rectification (SR) switch component, and a control circuit. The passive circuit couples the power stage to an output node of the voltage converter, and is switchably coupled to ground by the SR switch component. The SR switch component... Infineon Technologies Austria Ag

10/26/17 / #20170307668

Capacitance determination circuit and determining a capacitance

According to an embodiment, a capacitance determination circuit is provided comprising a voltage controlled oscillator configured to generate a frequency signal whose frequency depends on a control voltage supplied to the voltage controlled oscillator, a capacitor coupled to the voltage controlled oscillator wherein the control voltage depends on a voltage... Infineon Technologies Austria Ag

10/26/17 / #20170309713

Semiconductor device having stripe-shaped gate structures and spicular or needle-shaped field electrode structures

A semiconductor device includes a pair of stripe-shaped gate structures formed lengthwise in parallel in a first surface of a semiconductor body and extending into the semiconductor body, each stripe-shaped gate structure including a gate electrode and a gate dielectric separating the gate electrode from the semiconductor body. The semiconductor... Infineon Technologies Austria Ag

10/26/17 / #20170310121

Protection and management of a power supply output shorted to ground

In some examples, a circuit is configured to receive an input signal and deliver, based on the input signal, a charging current to a capacitor. The circuit may be further configured to receive an output voltage that indicates a charge on the capacitor. The circuit may be further configured to... Infineon Technologies Austria Ag

10/26/17 / #20170310230

Self supply for synchronous rectifiers

A power converter with an isolated topology may include a primary side and a secondary side. The secondary side includes a self-powered synchronous rectifier. The synchronous rectifier includes a synchronous rectifier transistor having at least a drain and a gate, a voltage regulator having at least an input that is... Infineon Technologies Austria Ag

10/19/17 / #20170301763

Power semiconductor device trench having field plate and gate electrode

A method of processing a power semiconductor device includes: providing a semiconductor body with a trench extending into the semiconductor body along an extension direction and including an insulator; providing a monolithic electrode zone within the trench; and removing a section of the monolithic electrode zone within the trench to... Infineon Technologies Austria Ag

10/19/17 / #20170301784

Semiconductor device having field-effect structures with different gate materials

A semiconductor device includes a plurality of first field-effect structures each including a polysilicon gate arranged on and in contact with a first gate dielectric, and a plurality of second field-effect structures each including a metal gate arranged on and in contact with a second gate dielectric. The plurality of... Infineon Technologies Austria Ag

10/19/17 / #20170302176

System and a switched-mode power supply

In accordance with an embodiment, a method of operating a switched-mode power includes turning on an output switch of the switched-mode power converter coupled to a supply output port of the switched-mode power converter, where an output switch current flows to the supply output port through the output switch in... Infineon Technologies Austria Ag

10/05/17 / #20170285674

Protection from hard commutation events at power switches

A system is described that includes a half-bridge, a first driver, a second driver, and a controller unit. The half-bridge includes a first switch coupled to a second switch at a switching node. The first driver is configured to drive the first switch and the second driver is configured to... Infineon Technologies Austria Ag

10/05/17 / #20170287709

Semiconductor substrate with stress relief regions

A crystalline base substrate including a first semiconductor material and having a main surface is provided. The base substrate is processed so as to damage a lattice structure of the base substrate in a first region that extends to the main surface without damaging a lattice structure of the base... Infineon Technologies Austria Ag

10/05/17 / #20170288553

Power converter and power conversion method

In accordance with an embodiment, a method includes disabling a first electronic switch connected in series with a primary winding of a transformer in a power converter circuit if an auxiliary voltage across an auxiliary winding of the transformer is outside a predefined voltage range. The power converter circuit further... Infineon Technologies Austria Ag

Patent Packs
10/05/17 / #20170288554

Power converter and power conversion method

In accordance with an embodiment, a power conversion method includes operating a power converter circuit in one of a first operation and a second operation mode based on a feedback signal and a signal level of an output signal at an output. The power converter includes a transformer with a... Infineon Technologies Austria Ag

10/05/17 / #20170288556

Circuits and methods for auxiliary secondary supply generation with self-starting primary side driver in isolated power converters

Circuits that provide an auxiliary power supply on the secondary side of an isolated switched-mode power converter are described. Such an auxiliary supply may be used to provide power to a secondary side controller or to other circuitry in the secondary side of the power converter. During at least a... Infineon Technologies Austria Ag

10/05/17 / #20170288654

Half bridge circuit, operating a half bridge circuit and a half bridge circuit package

A half bridge circuit includes an input connection configured to supply an electric input, an output connection configured to supply an electric output to a load to be connected to the output connection, a switch and a diode arranged between the input connection and the output connection and a voltage... Infineon Technologies Austria Ag

09/21/17 / #20170271454

Substrate structure, semiconductor component and method

In an embodiment, a substrate structure includes a support substrate, a buffer structure arranged on the support substrate, the buffer structure including an intentionally doped superlattice laminate, an unintentionally doped first Group III nitride layer arranged on the buffer structure, a second Group III nitride layer arranged on the first... Infineon Technologies Austria Ag

09/21/17 / #20170271491

Semiconductor transistor and forming the semiconductor transistor

A vertical semiconductor field-effect transistor includes a semiconductor body having a front side, and a field electrode trench extending from the front side into the semiconductor body The field electrode trench includes a field electrode and a field dielectric arranged between the field electrode and the semiconductor body. The vertical... Infineon Technologies Austria Ag

09/14/17 / #20170263378

Dc-dc converter assembly, manufacturing a dc-dc converter assembly and manufacturing an output inductor for a dc-dc converter assembly

A DC-DC converter assembly a power stage die of a DC-DC converter attached to a board, an output inductor attached to the board and electrically connected to an output of the power stage die, the output inductor accommodating the power stage die under the output inductor, a plurality of input... Infineon Technologies Austria Ag

09/14/17 / #20170263720

Method of forming a semiconductor device

According to an embodiment of a method of forming a semiconductor device, a semiconductor layer including a first dopant species of a first conductivity type and a second dopant species of a second conductivity type different from the first conductivity type is formed. The semiconductor layer is part of a... Infineon Technologies Austria Ag

09/14/17 / #20170263756

Semiconductor devices and a forming a semiconductor device

A semiconductor device includes a plurality of striped-shaped trenches extending into a semiconductor substrate. At least one trench of a first group of trenches of the plurality of striped-shaped trenches is located between two trenches of a second group of trenches of the plurality of striped-shaped trenches. A gate of... Infineon Technologies Austria Ag

09/07/17 / #20170254839

Metal shunt resistor

... Infineon Technologies Austria Ag

09/07/17 / #20170256619

Semiconductor device having field plate structures, source regions and gate electrode structures between the field plate structures

A semiconductor device includes a semiconductor substrate having a first surface, first and second field plate structures extending in a first direction parallel to the first surface, a plurality of gate electrode structures disposed over the first surface and extending in a second direction parallel to the first surface, the... Infineon Technologies Austria Ag

08/31/17 / #20170249202

Requirement runtime monitor using temporal logic or a regular expression

A hardware monitor may receive information that identifies a requirement for a system. The requirement may be associated with operation of the system during a runtime operation of the system in an intended operating environment. The hardware monitor may program the one or more hardware components to analyze the system... Infineon Technologies Austria Ag

08/31/17 / #20170250255

Semiconductor device with needle-shaped field plate structures in a transistor cell region and in an inner termination region

A semiconductor device includes a semiconductor substrate, a transistor cell region formed in the semiconductor substrate and an inner termination region formed in the semiconductor substrate and devoid of transistor cells. The transistor cell region includes a plurality of transistor cells and a gate structure that forms a grid separating... Infineon Technologies Austria Ag

08/31/17 / #20170250256

Semiconductor device with needle-shaped field plates and a gate structure with edge and node portions

A semiconductor device includes needle-shaped field plate structures extending from a first surface into transistor sections of a semiconductor portion in a transistor cell area. A grid structure separates the transistor sections from each other. The grid structure includes: stripe-shaped gate edge portions extending along one edge of the transistor... Infineon Technologies Austria Ag

08/31/17 / #20170250260

Double gate transistor device and operating

In accordance with an embodiment, a method include switching on a transistor device by generating a first conducting channel in a body region by driving a first gate electrode and, before generating the first conducting channel, generating a second conducting channel in the body region by driving a second gate... Infineon Technologies Austria Ag

08/31/17 / #20170250685

Double gate transistor device and operating

In accordance with an embodiment, a method includes switching on a transistor device by generating a first conducting channel by driving a first gate electrode and, before generating the first conducting channel, generating a second conducting channel by driving a second gate electrode, wherein the second gate electrode is adjacent... Infineon Technologies Austria Ag

08/24/17 / #20170242949

Transistor model, a a computer based determination of characteristic of a transistor, a device and a computer readable storage medium for performing the method

According to various embodiments, a transistor model for a computer based simulation of a field effect transistor may include: a first electrical network coupled between a drain node, a source node and a gate node, wherein the first electrical network is configured to represent an electrical characteristic of the field... Infineon Technologies Austria Ag

08/24/17 / #20170243936

Vertical potential short in the periphery region of a iii-nitride stack for preventing lateral leakage

A semiconductor die includes a substrate and a semiconductor body supported by the substrate and having a periphery which is devoid of active devices and terminates at an edge face of the semiconductor die. The semiconductor body includes a first III-nitride semiconductor layer and a plurality of second III-nitride semiconductor... Infineon Technologies Austria Ag

08/24/17 / #20170243938

Semiconductor wafer and manufacturing semiconductor devices in a semiconductor wafer

A method of manufacturing semiconductor devices in a semiconductor wafer comprises forming charge compensation device structures in the semiconductor wafer. An electric characteristic related to the charge compensation device structures is measured. At least one of proton irradiation and annealing parameters are adjusted based on the measured electric characteristic. The... Infineon Technologies Austria Ag

08/24/17 / #20170244327

Power supply systems and feedback through a transformer

A power converter circuit includes a transformer. The transformer includes a primary winding and a secondary winding. A primary circuit is coupled to the primary winding. A secondary circuit is coupled to the secondary winding. The primary circuit and the secondary circuit are referenced to different ground voltage potentials that... Infineon Technologies Austria Ag

08/24/17 / #20170244328

Power supply systems and feedback through a transformer

A power converter circuit includes a transformer. The transformer includes a primary winding and a secondary winding. A primary circuit is coupled to the primary winding. A secondary circuit is coupled to the secondary winding. The primary circuit and the secondary circuit are referenced to different ground voltage potentials that... Infineon Technologies Austria Ag

08/24/17 / #20170244330

Power converter with a snubber circuit

A power converter circuit includes a switching circuit with at least one electronic switch, a capacitor configured to provide or receive a voltage with a predefined voltage level, at least one first inductor, and a snubber circuit. The snubber circuit includes at least one second inductor inductively coupled to the... Infineon Technologies Austria Ag

08/24/17 / #20170244332

Power supply systems and feedback through a transformer

A power converter circuit includes a transformer. The transformer includes a primary winding and a secondary winding. A primary circuit is coupled to the primary winding. A secondary circuit is coupled to the secondary winding. The primary circuit and the secondary circuit are referenced to different ground voltage potentials that... Infineon Technologies Austria Ag

08/24/17 / #20170244407

Active gate-source capacitance clamp for normally-off hemt

A semiconductor assembly includes a first FET integrated within the semiconductor assembly and comprising gate, source and drain terminals. The semiconductor assembly further includes a low voltage switching device integrated within the semiconductor assembly and being configured to electrically short a gate-source capacitance of the first FET responsive to a... Infineon Technologies Austria Ag








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