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Infineon Technologies Austria Ag
Infineon Technologies Austria Ag_20100114
Infineon Technologies Austria Ag_20131212

Infineon Technologies Austria Ag patents


Recent patent applications related to Infineon Technologies Austria Ag. Infineon Technologies Austria Ag is listed as an Agent/Assignee. Note: Infineon Technologies Austria Ag may have other listings under different names/spellings. We're not affiliated with Infineon Technologies Austria Ag, we're just tracking patents.

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 new patent  Method for producing a superjunction device

Disclosed is a method that includes forming a plurality of semiconductor arrangements one above the other. In this method, forming each of the plurality of semiconductor arrangements includes: forming a semiconductor layer; forming a plurality of trenches in a first surface of the semiconductor layer; and implanting dopant atoms of... Infineon Technologies Austria Ag

 new patent  Power semiconductor device having a field electrode

A power semiconductor device includes: a semiconductor body for conducting a load current between first and second load terminals; source and channel regions and a drift volume in the semiconductor body; a semiconductor zone in the semiconductor body and coupling the drift volume to the second load terminal, a first... Infineon Technologies Austria Ag

System and controlling current in a switching regulator

In accordance with an embodiment, a method of operating a switch-mode power supply includes receiving a measurement of a first current of the switch-mode power supply, determining a ripple of the first current based on the received measurement of the first current, determining a maximum current threshold based on a... Infineon Technologies Austria Ag

Half bridge coupled resonant gate drivers

In accordance with an embodiment, a method of controlling a switch driver includes energizing a first inductor in a first direction with a first energy; transferring the first energy from the first inductor to a second inductor, wherein the second inductor is coupled between a second switch-driving terminal of the... Infineon Technologies Austria Ag

Method of manufacturing a super junction semiconductor device and super junction semiconductor device

A semiconductor device is manufactured by: i) forming a mask on a process surface of a semiconductor layer, elongated openings of the mask exposing part of the semiconductor layer and extending along a first lateral direction; ii) implanting dopants of a first conductivity type into the semiconductor layer based on... Infineon Technologies Austria Ag

Method and limiting inrush current during startup of a buck converter

A method of regulating an output voltage of a buck converter during a startup period in which the buck converter is first enabled includes regulating the output voltage of the buck converter to a reference voltage under current-mode control during a first part of the startup period, and regulating the... Infineon Technologies Austria Ag

Semiconductor device with field dielectric in an edge area

A semiconductor device includes a semiconductor body with transistor cells arranged in an active area and absent in an edge area between the active area and a side surface. A field dielectric adjoins a first surface of the semiconductor body and separates, in the edge area, a conductive structure connected... Infineon Technologies Austria Ag

Power mosfet semiconductor

A semiconductor device includes a source metallization, a source region of a first conductivity type in contact with the source metallization, a body region of a second conductivity type which is adjacent to the source region. The semiconductor device further includes a first field-effect structure including a first insulated gate... Infineon Technologies Austria Ag

Power converter including an autotransformer and power conversion method

A power converter circuit includes a chopper circuit configured to receive an input voltage and generate a chopper voltage with an alternating voltage level based on the input voltage, an autotransformer including at least one tap, the autotransformer being coupled to the chopper circuit and configured to generate a tap... Infineon Technologies Austria Ag

Power tool anti-theft

Techniques are disclosed for providing anti-theft protection for power tools. In one example of the techniques of the disclosure, at least one processor of a power tool receives, from an operator, a command to operate the power tool. In response to receiving the command, the at least one processor determines... Infineon Technologies Austria Ag

Compound semiconductor substrate and forming a compound semiconductor substrate

A method of forming a compound semiconductor substrate includes providing a crystalline base substrate having a first semiconductor material and a main surface, and forming a first semiconductor layer on the main surface and having a pair of tracks disposed on either side of active device regions. The first semiconductor... Infineon Technologies Austria Ag

Method for producing an integrated heterojunction semiconductor device

A method of producing a semiconductor component is provided. The method includes providing a silicon substrate having a <111>-surface defining a vertical direction, forming in the silicon substrate at least one electronic component, forming at least two epitaxial semiconductor layers on the silicon substrate to form a heterojunction above the... Infineon Technologies Austria Ag

High-electron-mobility transistor having a buried field plate

A high-electron-mobility semiconductor device includes: a buffer region having first, second and third cross-sections forming a stepped lateral profile, the first cross-section being thicker than the third cross-section and comprising a first buried field plate disposed therein, the second cross-section interposed between the first and third cross-sections and forming oblique... Infineon Technologies Austria Ag

Phase shift clock for digital llc converter

The techniques of this disclosure may digitally generate a driver signal with a period (or frequency) at a finer resolution than can be achieved by simply counting clock cycles of a system clock. The driver signal may be configured to trigger based on single output clock signal that may be... Infineon Technologies Austria Ag

Level shifter circuit

Techniques are disclosed for a level shifter configured to adjust current flow in response to measured current fluctuations due to common mode noise in the level shifter. For example, the level shifter includes a low-side control circuit configured to adjust a first current flowing into a first low-side terminal of... Infineon Technologies Austria Ag

Chip card module and producing a chip card module

In various embodiments, a chip card module is provided. The chip card module includes a chip card module contact array having six contact pads that are arranged in two rows having three contact pads each in accordance with ISO 7816, and three additional contact pads that are arranged between the... Infineon Technologies Austria Ag

Power supply regulation and bidirectional flow mode

A power converter circuit includes a transformer. The transformer includes a primary winding and a secondary winding. The power converter circuit uses energy conveyed from the primary winding of the transformer through the secondary winding of the transformer to produce an output voltage to power a load. Control circuitry of... Infineon Technologies Austria Ag

Method and determining lattice parameters of a strained iii-v semiconductor layer

A multi-layer arrangement of III-V semiconductor layers includes a strained III-V semiconductor layer having a concentration of a constituent element which effects intensity of a conductive channel formed in the multi-layer arrangement. Lattice parameters of the strained III-V semiconductor layer are determined by generating a first scan in a Qx... Infineon Technologies Austria Ag

Method for forming a power semiconductor device and a power semiconductor device

A method of forming a power semiconductor device includes providing a semiconductor layer of a first conductivity type extending to a first side and having a first doping concentration of first dopants providing majority charge carriers of a first electric charge type in the layer, and forming a deep trench... Infineon Technologies Austria Ag

Semiconductor devices and methods for forming a semiconductor device

A semiconductor device includes a plurality of compensation regions of a first conductivity type arranged in a semiconductor substrate. The semiconductor device further includes a plurality of drift region portions of a drift region of a vertical electrical element arrangement. The drift region has a second conductivity type. The drift... Infineon Technologies Austria Ag

Reduced gate charge field-effect transistor

In one implementation, a reduced gate charge field-effect transistor (FET) includes a drift region situated over a drain, a body situated over the drift region, and source diffusions formed in the body. The source diffusions are adjacent a gate trench extending through the body into the drift region and having... Infineon Technologies Austria Ag

Method and phase current estimation in semi-resonant voltage converters

A resonant or semi-resonant voltage converter includes a synchronous rectification (SR) switch through which a current having a half-cycle sinusoidal-like shape is conducted when the SR switch is active. The current through the SR switch is modelled, and estimates of the SR switch current are generated by a digital estimator... Infineon Technologies Austria Ag

Method for manufacturing a power semiconductor device

A method for manufacturing a power semiconductor device includes: forming a drift region of a first conductivity type, a second emitter region of a second conductivity type, a pn-junction between the second emitter region and drift region, and a first emitter region having a first doping region of the first... Infineon Technologies Austria Ag

Semiconductor devices and manufacturing semiconductor devices

A method for manufacturing a semiconductor device includes: forming a recess in a semiconductor substrate, the recess having a bottom and a sidewall extending from the bottom to a first side of the semiconductor substrate; forming an auxiliary structure on the sidewall and the bottom of the recess and forming... Infineon Technologies Austria Ag

Semiconductor structure having a test structure formed in a group iii nitride layer

In an embodiment, a semiconductor structure includes a support substrate comprising a surface adapted to support epitaxial growth of a Group III nitride, one or more epitaxial Group III nitride layers arranged on the surface and supporting a plurality of transistor devices assembled upon the support substrate, and a test... Infineon Technologies Austria Ag

Methods for forming semiconductor devices, semiconductor devices and power semiconductor devices

A method for forming a semiconductor device includes forming a first insulation layer on a semiconductor substrate and forming a structured etch stop layer. Further, the method includes depositing a second insulation layer after forming the structured etch stop layer and forming a structured mask layer on the second insulation... Infineon Technologies Austria Ag

Semiconductor device having a trench gate electrode

A semiconductor device includes a semiconductor substrate comprising a main surface and a gate electrode in a trench between neighboring semiconductor mesas, The gate electrode is electrically insulated from the neighboring semiconductor mesas by a dielectric layer. The semiconductor device further includes a conductor arranged, at least partially, between neighboring... Infineon Technologies Austria Ag

Semiconductor devices and methods for forming semiconductor devices

A semiconductor device includes an array of needle-shaped trenches extending into a semiconductor substrate. The semiconductor device further includes a gate trench grid extending into the semiconductor substrate. A gate electrode of a transistor structure is located within the gate trench grid. A gate wiring structure of the transistor structure... Infineon Technologies Austria Ag

Method and phase alignment in semi-resonant power converters

Each phase of a multi-phase voltage converter includes a power stage, passive circuit, synchronous rectification (SR) switch, and control circuit. Each passive circuit couples its power stage to an output node of the voltage converter, and is switchably coupled to ground by the SR switch. The current through the SR... Infineon Technologies Austria Ag

Llc power converter and switching method thereof

In some embodiments, an inductor-inductor-capacitor (LLC) converter includes a transformer having a primary winding, a secondary winding, and an auxiliary winding. The primary winding is coupled to a primary side circuit and the auxiliary winding has a first winding portion coupled between a first terminal and a middle terminal, and... Infineon Technologies Austria Ag

Method and phase alignment in semi-resonant power converters to avoid switching of power switches having negative current flow

Each phase of a multi-phase voltage converter includes a power stage, passive circuit, synchronous rectification (SR) switch, and control circuit. Each passive circuit couples its power stage to an output node of the voltage converter, and is switchably coupled to ground by the SR switch. The current through the SR... Infineon Technologies Austria Ag

Electronic component having a heat-sink thermally coupled to a heat-spreader

An electronic component includes one or more semiconductor dice embedded in a first dielectric layer, a heat-spreader embedded in a second dielectric layer and a heat-sink thermally coupled to the heat-spreader. The heat-spreader has a higher thermal conductivity in directions substantially parallel to the major surface of the one or... Infineon Technologies Austria Ag

Voltage doubler for power converters

In one example, a circuit includes an alternating current (AC) voltage source, a voltage rail, a reference rail, a first capacitor, a second capacitor, and a switching unit. The AC voltage source is configured to supply voltage in a first direction during a first half of a cycle and supply... Infineon Technologies Austria Ag

Bulk capacitor switching for power converters

In one example, a circuit includes a voltage rail, a reference node, a first capacitor, and a capacitor module. The first capacitor is coupled to the voltage rail and to the reference node. The capacitor module includes a second capacitor and a switching unit. The switching unit is configured to... Infineon Technologies Austria Ag

Method and efficient switching in semi-resonant power converters

A voltage converter includes a power stage, a passive circuit, a synchronous rectification (SR) switch component, and a control circuit. The passive circuit couples the power stage to an output node of the voltage converter, and is switchably coupled to ground by the SR switch component. The SR switch component... Infineon Technologies Austria Ag

10/26/17 / #20170307668

Capacitance determination circuit and determining a capacitance

According to an embodiment, a capacitance determination circuit is provided comprising a voltage controlled oscillator configured to generate a frequency signal whose frequency depends on a control voltage supplied to the voltage controlled oscillator, a capacitor coupled to the voltage controlled oscillator wherein the control voltage depends on a voltage... Infineon Technologies Austria Ag

10/26/17 / #20170309713

Semiconductor device having stripe-shaped gate structures and spicular or needle-shaped field electrode structures

A semiconductor device includes a pair of stripe-shaped gate structures formed lengthwise in parallel in a first surface of a semiconductor body and extending into the semiconductor body, each stripe-shaped gate structure including a gate electrode and a gate dielectric separating the gate electrode from the semiconductor body. The semiconductor... Infineon Technologies Austria Ag

10/26/17 / #20170310121

Protection and management of a power supply output shorted to ground

In some examples, a circuit is configured to receive an input signal and deliver, based on the input signal, a charging current to a capacitor. The circuit may be further configured to receive an output voltage that indicates a charge on the capacitor. The circuit may be further configured to... Infineon Technologies Austria Ag

10/26/17 / #20170310230

Self supply for synchronous rectifiers

A power converter with an isolated topology may include a primary side and a secondary side. The secondary side includes a self-powered synchronous rectifier. The synchronous rectifier includes a synchronous rectifier transistor having at least a drain and a gate, a voltage regulator having at least an input that is... Infineon Technologies Austria Ag

10/19/17 / #20170301763

Power semiconductor device trench having field plate and gate electrode

A method of processing a power semiconductor device includes: providing a semiconductor body with a trench extending into the semiconductor body along an extension direction and including an insulator; providing a monolithic electrode zone within the trench; and removing a section of the monolithic electrode zone within the trench to... Infineon Technologies Austria Ag

10/19/17 / #20170301784

Semiconductor device having field-effect structures with different gate materials

A semiconductor device includes a plurality of first field-effect structures each including a polysilicon gate arranged on and in contact with a first gate dielectric, and a plurality of second field-effect structures each including a metal gate arranged on and in contact with a second gate dielectric. The plurality of... Infineon Technologies Austria Ag

10/19/17 / #20170302176

System and a switched-mode power supply

In accordance with an embodiment, a method of operating a switched-mode power includes turning on an output switch of the switched-mode power converter coupled to a supply output port of the switched-mode power converter, where an output switch current flows to the supply output port through the output switch in... Infineon Technologies Austria Ag

10/05/17 / #20170285674

Protection from hard commutation events at power switches

A system is described that includes a half-bridge, a first driver, a second driver, and a controller unit. The half-bridge includes a first switch coupled to a second switch at a switching node. The first driver is configured to drive the first switch and the second driver is configured to... Infineon Technologies Austria Ag

10/05/17 / #20170287709

Semiconductor substrate with stress relief regions

A crystalline base substrate including a first semiconductor material and having a main surface is provided. The base substrate is processed so as to damage a lattice structure of the base substrate in a first region that extends to the main surface without damaging a lattice structure of the base... Infineon Technologies Austria Ag

10/05/17 / #20170288553

Power converter and power conversion method

In accordance with an embodiment, a method includes disabling a first electronic switch connected in series with a primary winding of a transformer in a power converter circuit if an auxiliary voltage across an auxiliary winding of the transformer is outside a predefined voltage range. The power converter circuit further... Infineon Technologies Austria Ag

10/05/17 / #20170288554

Power converter and power conversion method

In accordance with an embodiment, a power conversion method includes operating a power converter circuit in one of a first operation and a second operation mode based on a feedback signal and a signal level of an output signal at an output. The power converter includes a transformer with a... Infineon Technologies Austria Ag

10/05/17 / #20170288556

Circuits and methods for auxiliary secondary supply generation with self-starting primary side driver in isolated power converters

Circuits that provide an auxiliary power supply on the secondary side of an isolated switched-mode power converter are described. Such an auxiliary supply may be used to provide power to a secondary side controller or to other circuitry in the secondary side of the power converter. During at least a... Infineon Technologies Austria Ag

10/05/17 / #20170288654

Half bridge circuit, operating a half bridge circuit and a half bridge circuit package

A half bridge circuit includes an input connection configured to supply an electric input, an output connection configured to supply an electric output to a load to be connected to the output connection, a switch and a diode arranged between the input connection and the output connection and a voltage... Infineon Technologies Austria Ag

09/21/17 / #20170271454

Substrate structure, semiconductor component and method

In an embodiment, a substrate structure includes a support substrate, a buffer structure arranged on the support substrate, the buffer structure including an intentionally doped superlattice laminate, an unintentionally doped first Group III nitride layer arranged on the buffer structure, a second Group III nitride layer arranged on the first... Infineon Technologies Austria Ag

09/21/17 / #20170271491

Semiconductor transistor and forming the semiconductor transistor

A vertical semiconductor field-effect transistor includes a semiconductor body having a front side, and a field electrode trench extending from the front side into the semiconductor body The field electrode trench includes a field electrode and a field dielectric arranged between the field electrode and the semiconductor body. The vertical... Infineon Technologies Austria Ag

09/14/17 / #20170263378

Dc-dc converter assembly, manufacturing a dc-dc converter assembly and manufacturing an output inductor for a dc-dc converter assembly

A DC-DC converter assembly a power stage die of a DC-DC converter attached to a board, an output inductor attached to the board and electrically connected to an output of the power stage die, the output inductor accommodating the power stage die under the output inductor, a plurality of input... Infineon Technologies Austria Ag

09/14/17 / #20170263720

Method of forming a semiconductor device

According to an embodiment of a method of forming a semiconductor device, a semiconductor layer including a first dopant species of a first conductivity type and a second dopant species of a second conductivity type different from the first conductivity type is formed. The semiconductor layer is part of a... Infineon Technologies Austria Ag

09/14/17 / #20170263756

Semiconductor devices and a forming a semiconductor device

A semiconductor device includes a plurality of striped-shaped trenches extending into a semiconductor substrate. At least one trench of a first group of trenches of the plurality of striped-shaped trenches is located between two trenches of a second group of trenches of the plurality of striped-shaped trenches. A gate of... Infineon Technologies Austria Ag

09/07/17 / #20170254839

Metal shunt resistor

... Infineon Technologies Austria Ag

09/07/17 / #20170256619

Semiconductor device having field plate structures, source regions and gate electrode structures between the field plate structures

A semiconductor device includes a semiconductor substrate having a first surface, first and second field plate structures extending in a first direction parallel to the first surface, a plurality of gate electrode structures disposed over the first surface and extending in a second direction parallel to the first surface, the... Infineon Technologies Austria Ag

08/31/17 / #20170249202

Requirement runtime monitor using temporal logic or a regular expression

A hardware monitor may receive information that identifies a requirement for a system. The requirement may be associated with operation of the system during a runtime operation of the system in an intended operating environment. The hardware monitor may program the one or more hardware components to analyze the system... Infineon Technologies Austria Ag

08/31/17 / #20170250255

Semiconductor device with needle-shaped field plate structures in a transistor cell region and in an inner termination region

A semiconductor device includes a semiconductor substrate, a transistor cell region formed in the semiconductor substrate and an inner termination region formed in the semiconductor substrate and devoid of transistor cells. The transistor cell region includes a plurality of transistor cells and a gate structure that forms a grid separating... Infineon Technologies Austria Ag

08/31/17 / #20170250256

Semiconductor device with needle-shaped field plates and a gate structure with edge and node portions

A semiconductor device includes needle-shaped field plate structures extending from a first surface into transistor sections of a semiconductor portion in a transistor cell area. A grid structure separates the transistor sections from each other. The grid structure includes: stripe-shaped gate edge portions extending along one edge of the transistor... Infineon Technologies Austria Ag

08/31/17 / #20170250260

Double gate transistor device and operating

In accordance with an embodiment, a method include switching on a transistor device by generating a first conducting channel in a body region by driving a first gate electrode and, before generating the first conducting channel, generating a second conducting channel in the body region by driving a second gate... Infineon Technologies Austria Ag

08/31/17 / #20170250685

Double gate transistor device and operating

In accordance with an embodiment, a method includes switching on a transistor device by generating a first conducting channel by driving a first gate electrode and, before generating the first conducting channel, generating a second conducting channel by driving a second gate electrode, wherein the second gate electrode is adjacent... Infineon Technologies Austria Ag

08/24/17 / #20170242949

Transistor model, a a computer based determination of characteristic of a transistor, a device and a computer readable storage medium for performing the method

According to various embodiments, a transistor model for a computer based simulation of a field effect transistor may include: a first electrical network coupled between a drain node, a source node and a gate node, wherein the first electrical network is configured to represent an electrical characteristic of the field... Infineon Technologies Austria Ag

08/24/17 / #20170243936

Vertical potential short in the periphery region of a iii-nitride stack for preventing lateral leakage

A semiconductor die includes a substrate and a semiconductor body supported by the substrate and having a periphery which is devoid of active devices and terminates at an edge face of the semiconductor die. The semiconductor body includes a first III-nitride semiconductor layer and a plurality of second III-nitride semiconductor... Infineon Technologies Austria Ag

08/24/17 / #20170243938

Semiconductor wafer and manufacturing semiconductor devices in a semiconductor wafer

A method of manufacturing semiconductor devices in a semiconductor wafer comprises forming charge compensation device structures in the semiconductor wafer. An electric characteristic related to the charge compensation device structures is measured. At least one of proton irradiation and annealing parameters are adjusted based on the measured electric characteristic. The... Infineon Technologies Austria Ag

08/24/17 / #20170244327

Power supply systems and feedback through a transformer

A power converter circuit includes a transformer. The transformer includes a primary winding and a secondary winding. A primary circuit is coupled to the primary winding. A secondary circuit is coupled to the secondary winding. The primary circuit and the secondary circuit are referenced to different ground voltage potentials that... Infineon Technologies Austria Ag

08/24/17 / #20170244328

Power supply systems and feedback through a transformer

A power converter circuit includes a transformer. The transformer includes a primary winding and a secondary winding. A primary circuit is coupled to the primary winding. A secondary circuit is coupled to the secondary winding. The primary circuit and the secondary circuit are referenced to different ground voltage potentials that... Infineon Technologies Austria Ag

Patent Packs
08/24/17 / #20170244330

Power converter with a snubber circuit

A power converter circuit includes a switching circuit with at least one electronic switch, a capacitor configured to provide or receive a voltage with a predefined voltage level, at least one first inductor, and a snubber circuit. The snubber circuit includes at least one second inductor inductively coupled to the... Infineon Technologies Austria Ag

08/24/17 / #20170244332

Power supply systems and feedback through a transformer

A power converter circuit includes a transformer. The transformer includes a primary winding and a secondary winding. A primary circuit is coupled to the primary winding. A secondary circuit is coupled to the secondary winding. The primary circuit and the secondary circuit are referenced to different ground voltage potentials that... Infineon Technologies Austria Ag

08/24/17 / #20170244407

Active gate-source capacitance clamp for normally-off hemt

A semiconductor assembly includes a first FET integrated within the semiconductor assembly and comprising gate, source and drain terminals. The semiconductor assembly further includes a low voltage switching device integrated within the semiconductor assembly and being configured to electrically short a gate-source capacitance of the first FET responsive to a... Infineon Technologies Austria Ag

08/17/17 / #20170236910

Methods of manufacturing a power mosfet

A method of manufacturing a power metal oxide semiconductor field effect transistor includes: forming a field electrode in a field plate trench in a main surface of a semiconductor substrate; forming a gate trench in the main surface, the gate trench extending in a first direction parallel to the main... Infineon Technologies Austria Ag

08/17/17 / #20170236913

Method of processing a semiconductor device

A method of processing a semiconductor device includes: creating first and second recesses in a surface of a semiconductor body; creating an insulation layer that forms first and second wells each having a common lateral extension range with the portion of the insulation layer located between the recesses; filling the... Infineon Technologies Austria Ag

08/10/17 / #20170229959

Set point independent regulation of a switched mode power converter

A controller for controlling a power converter includes an analog-to-digital converter (ADC) configured to output, based on a received analog voltage, a first digital value defined by a first resolution. The controller also includes a digital filter configured to adjust, based at least in part on the first digital value,... Infineon Technologies Austria Ag

08/03/17 / #20170221988

Method of manufacturing semiconductor devices including deposition of crystalline silicon in trenches

Trenches are formed in a semiconductor layer of a semiconductor substrate. A mixture that contains trichlorosilane and hydrogen gas is fed into a process chamber containing the semiconductor substrate. A barometric pressure in the process chamber is at least 50% of standard atmosphere. The trenches are filled with epitaxially deposited... Infineon Technologies Austria Ag

08/03/17 / #20170221989

Semiconductor device with superjunction structure and transistor cells in a transition region along a transistor cell region

A semiconductor device includes a transistor cell region and a transition region. The transistor cell region includes a first portion of a super junction structure and a first contact structure electrically connecting a first load electrode with first source zones of transistor cells. The first source zones are formed on... Infineon Technologies Austria Ag

08/03/17 / #20170222043

Semiconductor device including a lateral transistor

A semiconductor device includes a source region and a drain region of a first conductivity type. The source region and the drain region are arranged in a first direction parallel to a first main surface of a semiconductor substrate. The semiconductor device further includes a layer stack having a drift... Infineon Technologies Austria Ag

08/03/17 / #20170222560

Method and estimating load current for semi-resonant and resonant converters

A voltage converter includes a variable switching frequency power stage, a passive circuit and a control circuit. The power stage includes a high-side switch and a first low-side switch coupled to the high-side switch at a switching node of the power stage. The passive circuit couples the switching node to... Infineon Technologies Austria Ag

08/03/17 / #20170222561

System and a cascode switch

In some embodiments, a power system includes an integrated circuit (IC). The IC includes a first switching transistor having a load path coupled between a sensing terminal of the IC and a first terminal of the IC. The first terminal of the IC is configured to be coupled to a... Infineon Technologies Austria Ag

08/03/17 / #20170222573

Resonant decoupled auxiliary supply for a switched-mode power supply controller

Switched-mode power supply (SMPS) circuits and a method implemented within an SMPS are provided. The circuits and method use resonant energy capturing and filtering circuitry to provide an auxiliary power supply that may be used to power a controller of an SMPS. This circuitry includes a resonant circuit that recirculates... Infineon Technologies Austria Ag

08/03/17 / #20170222643

Driver for the high side switch of the cascode switch

In accordance with an embodiment, a circuit includes a first and a second switching transistors configured to be coupled in series between a first reference voltage terminal and a transformer. The circuit also includes a first diode coupled between a first drain of the first switching transistor and a first... Infineon Technologies Austria Ag

07/20/17 / #20170207123

Method for processing a substrate and an electronic device

According to various embodiments, a method for processing a substrate may include: processing a plurality of device regions in a substrate separated from each other by dicing regions, each device region including at least one electronic component; wherein processing each device region of the plurality of device regions includes: forming... Infineon Technologies Austria Ag

07/20/17 / #20170207306

Electronic component and switch circuit

In an embodiment, an electronic component includes a compound semiconductor transistor device having a first current electrode, a second current electrode and a control electrode, a die pad, a first lead, a second lead and a third lead. The first lead, the second lead and the third lead are spaced... Infineon Technologies Austria Ag

Patent Packs
07/20/17 / #20170207309

Processing a semiconductor device

A method of processing a semiconductor device is presented. The method includes providing a semiconductor body; forming a trench within the semiconductor body, the trench having a stripe configuration and extending laterally within an active region of the semiconductor body that is surrounded by a non-active region of the semiconductor... Infineon Technologies Austria Ag

07/13/17 / #20170197865

Mold, producing a mold, and forming a mold article

Various embodiments provide a mold including a pyrolytic carbon film disposed at a surface of the mold. Various embodiments relate to using a low pressure chemical vapor deposition process (LPCVD) or using a physical vapor deposition (PVD) process in order to form a pyrolytic carbon film at a surface of... Infineon Technologies Austria Ag

07/13/17 / #20170200610

Production of an integrated circuit including electrical contact on sic

Production of an integrated circuit including an electrical contact on SiC is disclosed. One embodiment provides for production of an electrical contact on an SiC substrate, in which a conductive contact is produced on a boundary surface of the SiC substrate by irradiation and absorption of a laser pulse on... Infineon Technologies Austria Ag

07/13/17 / #20170200791

Semiconductor device including an edge construction with straight sections and corner sections

A semiconductor device includes a transistor cell area with active transistor cells including source zones electrically connected to a first load electrode. The source zones have a first conductivity type. An edge area surrounds the active transistor cell area and includes an edge construction that includes straight sections and a... Infineon Technologies Austria Ag

07/13/17 / #20170200817

High electron mobility transistor with carrier injection mitigation gate structure

A method includes providing a heterostructure body with a buffer region, and a barrier region disposed on the buffer region, and forming a gate structure for controlling the channel on the heterostructure body, the gate structure having a doped semiconductor region disposed on the heterostructure body, an interlayer disposed on... Infineon Technologies Austria Ag

07/06/17 / #20170194230

Water and ion barrier for the periphery of iii-v semiconductor dies

A semiconductor die includes an III-V semiconductor body having a periphery devoid of active devices, the periphery terminating at an edge face of the semiconductor die. The semiconductor die further includes a seal ring structure above the periphery of the III-V semiconductor body and a barrier. The barrier is disposed... Infineon Technologies Austria Ag

07/06/17 / #20170194484

Transistor with field electrode

Disclosed is a transistor device and a method for producing thereof. The transistor device includes at least one transistor cell, wherein the at least one transistor cell includes: a source region, a body region and a drift region in a semiconductor body; a gate electrode dielectrically insulated from the body... Infineon Technologies Austria Ag

07/06/17 / #20170194866

Method for operating a power converter circuit and power converter circuit

In accordance with an embodiment, a method includes converting power by a power converter circuit having a plurality of converter cells coupled to a supply circuit. Converting the power includes a plurality of successive activation sequences and, in each activation sequence, activating at least some of the plurality of converter... Infineon Technologies Austria Ag

07/06/17 / #20170196118

Power supply and method

A power supply includes a plurality of electronic components including one or more of a rectifier and a switching transistor, an input port configured to receive electrical energy from a power source and a circuit board comprising a cavity. At least one of the rectifier and the switching transistor is... Infineon Technologies Austria Ag

06/29/17 / #20170186600

Semiconductor wafer and method

In an embodiment, a method includes treating an edge region of a wafer including a substrate having an upper surface and one or more epitaxial Group III nitride layers arranged on the upper surface of the substrate, so as to remove material including at least one Group III element from... Infineon Technologies Austria Ag

06/29/17 / #20170186695

Method of manufacturing a semiconductor device with epitaxial layers and an alignment mark

An alignment mark in a process surface of a semiconductor layer includes a groove with a minimum width of at least 100 μm and a vertical extension in a range 100 nm to 1 μm. The alignment mark further includes at least one fin within the groove at a distance... Infineon Technologies Austria Ag

06/29/17 / #20170186863

Method of producing an integrated power transistor circuit having a current-measuring cell

A method for producing an integrated power transistor circuit includes forming at least one transistor cell in a cell array, each transistor cell having a doped region formed in a semiconductor substrate and adjoining a first surface of the semiconductor substrate on a first side of the semiconductor substrate, depositing... Infineon Technologies Austria Ag

06/29/17 / #20170187185

Power factor correction using power factor correction circuitry from deactivated circuit

A method of operating a power supply including first and second power converters connected to a load and a power factor correction circuit connected to the power converters incudes operating the power supply in a normal power mode such that: the first and second power converters and the power factor... Infineon Technologies Austria Ag

06/29/17 / #20170187217

Capacitor discharging

An example method includes storing a peak voltage level, a valley voltage level, and a frequency of a signal that corresponds to an alternating current (AC) signal across a capacitor; periodically determining whether a current peak voltage level of the signal is different than the stored peak voltage level of... Infineon Technologies Austria Ag

06/29/17 / #20170187230

Rectification and regulation circuit for a wireless power receiver

A rectification and regulation circuit for a wireless power receiver includes a coil for magnetically coupling to a primary coil of a power transmitter, a full-wave rectifier circuit separate from the power transmitter and a control unit separate from the power transmitter. The full-wave rectifier has a first pair of... Infineon Technologies Austria Ag

06/29/17 / #20170187292

System and a switching circuit

According to an embodiment, a switched-mode power supply (SMPS) includes a controller including a measurement circuit and a pulse width modulator having an output configured to be coupled to a control node of a switch of the SMPS. The measurement circuit is configured to determine a phase angle of an... Infineon Technologies Austria Ag

06/22/17 / #20170178795

Through-hole inductor for placement over a power stage of a power converter

An electrical conductor of a through-hole inductor includes a first section extending along a first side face of the magnetic core, a second section extending along a second side face of the magnetic core, and a third section connecting the first and second sections and extending through the magnetic core.... Infineon Technologies Austria Ag

06/22/17 / #20170178797

Surface mount inductor for placement over a power stage of a power converter

An electrical conductor of a surface mount inductor includes a first section extending along a first side face of the magnetic core, a second section extending along a second side face of the magnetic core, and a third section connecting the first and second sections and extending through the magnetic... Infineon Technologies Austria Ag

06/22/17 / #20170179009

Semiconductor devices with improved thermal and electrical performance

A device may include a carrier, a semiconductor chip arranged over a first surface of the carrier, and an encapsulation body comprising six side surfaces and encapsulating the semiconductor chip. A second surface of the carrier opposite to the first surface of the carrier is exposed from the encapsulation body.... Infineon Technologies Austria Ag

06/22/17 / #20170179828

Multiphase regulator with phase current testing

According to an embodiment, a multiphase regulator includes a plurality of output phases each of which is operable to deliver a phase current through a separate inductor to a load connected to the output phases via the inductors and an output capacitor. A controller is operable to regulate a voltage... Infineon Technologies Austria Ag

06/22/17 / #20170179830

Multiphase regulator with current pattern matching

According to an embodiment, a multiphase regulator includes a plurality of output phases each of which is operable to deliver a phase current through a separate inductor to a load connected to the output phases via the inductors and an output capacitor. A controller is operable to regulate a voltage... Infineon Technologies Austria Ag








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