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Infineon Technologies Dresden Gmbh patents


Recent patent applications related to Infineon Technologies Dresden Gmbh. Infineon Technologies Dresden Gmbh is listed as an Agent/Assignee. Note: Infineon Technologies Dresden Gmbh may have other listings under different names/spellings. We're not affiliated with Infineon Technologies Dresden Gmbh, we're just tracking patents.

ARCHIVE: New 2018 2017 2016 2015 2014 2013 2012 2011 2010 2009 | Company Directory "I" | Infineon Technologies Dresden Gmbh-related inventors


Method of manufacturing a semiconductor device

A method of manufacturing a semiconductor device includes forming an amorphous silicon layer over a first isolation layer. The method further includes simultaneously forming a gate oxide layer of a transistor device and transforming the amorphous silicon layer into a polycrystalline silicon layer by a thermal oxidation process. Herein a... Infineon Technologies Dresden Gmbh

Semiconductor devices and methods for forming a semiconductor device

A semiconductor device includes a transistor arrangement and a diode structure. The diode structure is coupled between a gate electrode structure of the transistor arrangement and a source electrode structure of the transistor arrangement. An insulating layer is located vertically between the diode structure and a front side surface of... Infineon Technologies Dresden Gmbh

Microelectromechanical device and forming a microelectromechanical device having a support structure holding a lamella structure

A method for forming a microelectromechanical device is shown. The method comprises forming a cavity in a semiconductor substrate material, wherein the semiconductor substrate material comprises an opening for providing access to the cavity through a main surface area of the semiconductor substrate material. In a further step, the method... Infineon Technologies Dresden Gmbh

Semiconductor device having an electrostatic discharge protection structure

A semiconductor device includes a semiconductor body having a first surface and a second surface opposite to the first surface. A first isolation layer is provided over the first surface of the semiconductor body. The semiconductor device further includes an electrostatic discharge protection structure over the first isolation layer. The... Infineon Technologies Dresden Gmbh

Method for manufacturing a bipolar junction transistor

Embodiments provide a method for manufacturing a bipolar junction transistor. The method comprises a step of providing a layer stack, the layer stack comprising a semiconductor substrate having a trench isolation, a base contact layer stack, wherein the base contact layer stack comprises a recess forming an emitter window, lateral... Infineon Technologies Dresden Gmbh

Semiconductor device and manufacturing the semiconductor device

A method of manufacturing a semiconductor device includes forming an etching mask over a semiconductor body, forming a plurality of trenches in the semiconductor body to define a plurality of protruding semiconductor portions between adjacent trenches, and forming a protection layer in contact with a semiconductor material of the protruding... Infineon Technologies Dresden Gmbh

Semiconductor device comprising a transistor cell including a source contact in a trench, manufacturing the semiconductor device and integrated circuit

A semiconductor device and a method of manufacturing the same is provided. The semiconductor device including a transistor cell in a semiconductor substrate having a first main surface. The transistor cell includes a gate electrode in a gate trench in the first main surface adjacent to a body region. A... Infineon Technologies Dresden Gmbh

Pressure sensor device and manufacturing method

A manufacturing method includes providing a semiconductor substrate having a pressure sensor structure; and forming, during a BEOL process (BEOL=back-end-of-line), a metal-insulator-stack arrangement on the semiconductor substrate, wherein the metal-insulator-stack arrangement is formed to comprise (1) a cavity adjacent to the pressure sensor structure and extending over the pressure sensor... Infineon Technologies Dresden Gmbh

Stress decoupled piezoresistive relative pressure sensor and manufacturing the same

Embodiments provide a MEMS (Micro Electro Mechanical System) pressure sensor comprising a semiconductor substrate, wherein the semiconductor substrate comprises a stress decoupling structure adapted to stress decouple a first portion of the semiconductor substrate from a second portion of the semiconductor substrate, wherein the first portion of the semiconductor substrate... Infineon Technologies Dresden Gmbh

Semiconductor packages and methods of fabrication thereof

In accordance with an embodiment of the present invention, a semiconductor device includes a semiconductor chip having a first side and an opposite second side, and a chip contact pad disposed on the first side of the semiconductor chip. A dielectric liner is disposed over the semiconductor chip. The dielectric... Infineon Technologies Dresden Gmbh

Method for manufacturing an emitter for high-speed heterojunction bipolar transistors

A method for manufacturing a bipolar junction transistor is provided. A layer stack is provided that comprises a semiconductor substrate having a trench isolation; an isolation layer arranged on the semiconductor substrate, wherein the first isolation layer comprises a recess forming an emitter window; lateral spacers arranged on sidewalls of... Infineon Technologies Dresden Gmbh

Heterojunction bipolar transistor fully self-aligned to diffusion region with strongly minimized substrate parasitics and selective pre-structured epitaxial base link

Methods for manufacturing a bipolar junction transistor are provided. A method includes providing a semiconductor substrate having a trench isolation, where a pad resulting from a manufacturing of the trench isolation is arranged on the semiconductor substrate, providing an isolation layer on the semiconductor substrate and the pad such that... Infineon Technologies Dresden Gmbh

Particle sensor and sensing particles in a fluid

Various embodiments provide a particle sensor including: a first carrier, the first carrier including at least one heating structure and a light detecting structure, at least one spacer structure disposed over the first carrier, a second carrier disposed over the at least one spacer structure, the second carrier including a... Infineon Technologies Dresden Gmbh

Method for manufacturing a bipolar junction transistor

partially counter doping the collector implant through an area of the base layer surrounding an area of the base layer that is covered by the sacrificial emitter structure.... Infineon Technologies Dresden Gmbh

System and a comb-drive mems device

According to an embodiment, a method of forming a MEMS transducer includes forming a transducer frame in a layer of monocrystalline silicon, where forming the transducer frame includes forming a support portion adjacent a cavity and forming a first set of comb-fingers extending from the support portion. The method of... Infineon Technologies Dresden Gmbh

Silicon on nothing devices and methods of formation thereof

In accordance with an embodiment of the present invention, a method of forming a semiconductor device includes forming a first cavity within a substrate. The first cavity is disposed under a portion of the substrate. The method further includes forming a first pillar within the first cavity to support the... Infineon Technologies Dresden Gmbh

Method for manufacturing a transistor

A method comprises arranging a stack, on a semiconductor substrate, comprising a sacrificial layer and an insulating layer. The insulator layer is at least partially arranged between the semiconductor substrate and the sacrificial layer. A recess is formed within the stack. The recess extends through the stack to the semiconductor... Infineon Technologies Dresden Gmbh

Semiconductor device

A semiconductor device includes a semiconductor body having opposite first and second surfaces. The semiconductor device further includes a transistor structure in the semiconductor body and a source contact structure overlapping the transistor structure. The source contact structure is electrically connected to source regions of the transistor structure. A gate... Infineon Technologies Dresden Gmbh

Semiconductor battery and semiconductor device including a semiconductor battery

A semiconductor battery includes a substrate, a battery anode semiconductor material arranged in or over the substrate, a battery cathode material arranged in or over the substrate and a battery electrolyte disposed between the battery anode semiconductor material and the battery cathode material. An electrically insulating encapsulant has a first... Infineon Technologies Dresden Gmbh

Method for manufacturing a semiconductor device having silicide layers

A method for manufacturing a semiconductor device includes providing a semiconductor substrate having a first side. A trench having a bottom is formed. The trench separates a first mesa region from a second mesa region formed in the semiconductor substrate. The trench is filled with an insulating material, and the... Infineon Technologies Dresden Gmbh

Wafer arrangement, a testing a wafer, and a processing a wafer

According to various embodiments, a wafer arrangement may be provided, the wafer arrangement may include: a wafer including at least one electronic component having at least one electronic contact exposed on a surface of the wafer; an adhesive layer structure disposed over the surface of the wafer, the adhesive layer... Infineon Technologies Dresden Gmbh

Carrier and a processing a carrier

According to various embodiments, a carrier may be provided, the carrier including: a hollow chamber spaced apart from a surface of the carrier; a trench structure extending from the surface of the carrier to the hollow chamber and laterally surrounding a first region of the carrier, the trench structure including... Infineon Technologies Dresden Gmbh

Silicon light trap devices, systems and methods

Embodiments relate to buried structures for silicon devices which can alter light paths and thereby form light traps. Embodiments of the lights traps can couple more light to a photosensitive surface of the device, rather than reflecting the light or absorbing it more deeply within the device, which can increase... Infineon Technologies Dresden Gmbh

Optoelectronic component, a manufacturing an optoelectronic component, and a processing a carrier

According to various embodiments, an optoelectronic component may be provided, the optoelectronic component including: an electrode structure disposed at least one of over and in a carrier; and a grating structure disposed over the electrode structure, the grating structure including at least a first region and a second region, wherein... Infineon Technologies Dresden Gmbh

Sensor structures, systems and methods with improved integration and optimized footprint

Embodiments relate to sensors and more particularly to structures for and methods of forming sensors that are easier to manufacture as integrated components and provide improved deflection of a sensor membrane, lamella or other movable element. In embodiments, a sensor comprises a support structure for a lamella, membrane or other... Infineon Technologies Dresden Gmbh

Method for manufacturing an electronic device and operating an electronic device

According to various embodiments, an electronic device may include a carrier including at least a first region and a second region being laterally adjacent to each other; an electrically insulating structure arranged in the first region of the carrier, wherein the second region of the carrier is free of the... Infineon Technologies Dresden Gmbh

Semiconductor device with contact structures extending through an interlayer and manufacturing

A layer stack is formed on a main surface of a semiconductor layer, wherein the layer stack includes a dielectric capping layer and a metal layer between the capping layer and the semiconductor layer. Second portions of the layer stack are removed to form gaps between remnant first portions. Adjustment... Infineon Technologies Dresden Gmbh

Semiconductor device comprising a transistor cell including a source contact in a trench, manufacturing the semiconductor device and integrated circuit

A semiconductor device is provided including a transistor cell in a semiconductor substrate having a first main surface. The transistor cell includes a gate electrode in a gate trench in the first main surface adjacent to a body region. A longitudinal axis of the gate trench extends in a first... Infineon Technologies Dresden Gmbh

Semiconductor device with a laterally varying doping profile, and manufacturing thereof

A semiconductor device includes a semiconductor substrate having a first side. At least a first doping region is formed in the semiconductor substrate. The first doping region has a laterally varying doping dosage and/or a laterally varying implantation depth.... Infineon Technologies Dresden Gmbh

Integrated semiconductor device and manufacturing method

The present disclosure relates to an integrated semiconductor device, comprising a semiconductor substrate; a cavity formed into the semiconductor substrate; a sensor portion of the semiconductor substrate deflectably suspended in the cavity at one side of the cavity via a suspension portion of the semiconductor substrate interconnecting the semiconductor substrate... Infineon Technologies Dresden Gmbh

Method for filling a trench and semiconductor device

A method includes forming a first trench in a semiconductor body between two semiconductor fins, filling the first trench with a first filling material, partially removing the first filling material by forming a second trench such that the second trench has a lower aspect ratio than the first trench, and... Infineon Technologies Dresden Gmbh

Integrated light emitting device, integrated sensor device, and manufacturing method

The present disclosure relates to an integrated light emitting device. The integrated light emitting device comprises a substrate of semiconductor material, a light emitting unit integrated into the semiconductor material, and at least one cavity formed into the semiconductor material between the substrate and the light emitting unit. At least... Infineon Technologies Dresden Gmbh








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