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Institute Of Microelectronics Chinese Academy Of Sciences
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Institute Of Microelectronics Chinese Academy Of Sciences patents


Recent patent applications related to Institute Of Microelectronics Chinese Academy Of Sciences. Institute Of Microelectronics Chinese Academy Of Sciences is listed as an Agent/Assignee. Note: Institute Of Microelectronics Chinese Academy Of Sciences may have other listings under different names/spellings. We're not affiliated with Institute Of Microelectronics Chinese Academy Of Sciences, we're just tracking patents.

ARCHIVE: New 2018 2017 2016 2015 2014 2013 2012 2011 2010 2009 | Company Directory "I" | Institute Of Microelectronics Chinese Academy Of Sciences-related inventors


Semiconductor arrangement, manufacturing the same electronic device including the same

There are provided a semiconductor arrangement, a method of manufacturing the same, and an electronic device including the semiconductor arrangement. According to an embodiment, the semiconductor arrangement may include a first semiconductor device and a second semiconductor device stacked in sequence on a substrate. Each of the first semiconductor device... Institute Of Microelectronics Chinese Academy Of Sciences

Semiconductor device, manufacturing the same and electronic device including the device

There are provided a semiconductor device, a method of manufacturing the same, and an electronic device including the device. According to an embodiment, the semiconductor device may include a substrate; a first source/drain layer, a channel layer and a second source/drain layer stacked on the substrate in sequence, wherein the... Institute Of Microelectronics Chinese Academy Of Sciences

Semiconductor device, manufacturing the same and electronic device including the same

A semiconductor device, a method of manufacturing the same and an electronic device including the semiconductor device are provided. According to embodiments, the semiconductor device may include a substrate, a first source/drain layer, a channel layer and a second source/drain layer stacked in sequence on the substrate, and a gate... Institute Of Microelectronics Chinese Academy Of Sciences

Semiconductor device, manufacturing the same and electronic device including the device

There are provided a semiconductor device, a method of manufacturing the same, and an electronic device including the device. According to an embodiment, the semiconductor device may include a substrate, and a first device and a second device formed on the substrate. Each of the first device and the second... Institute Of Microelectronics Chinese Academy Of Sciences

Semiconductor arrangement and manufacturing the same

Provided are a semiconductor arrangement and a method for manufacturing the same. An example arrangement may comprise: a bulk semiconductor substrate; a fin formed on the substrate; a first FinFET and a second FinFET formed on the substrate, wherein the first FinFET comprises a first gate stack intersecting the fin... Institute Of Microelectronics Chinese Academy Of Sciences

Nonvolatile resistive switching memory device and manufacturing method thereof

A nonvolatile resistive switching memory, comprising an inert metal electrode, a resistive switching functional layer, and an easily oxidizable metal electrode, and characterized in that: a graphene barrier layer is inserted between the inert metal electrode and the resistive switching functional layer, which is capable of preventing the easily oxidizable... Institute Of Microelectronics Chinese Academy Of Sciences

Nonvolatile resistive switching memory device and manufacturing method thereof

A nonvolatile resistive switching memory includes an inert metal electrode, a resistive switching functional layer, and an easily oxidizable metal electrode. A graphene intercalation layer with nanopores, interposed between the easily oxidizable metal electrode and the resistive switching functional layer, is capable of controlling the metal ions, which are formed... Institute Of Microelectronics Chinese Academy Of Sciences

Method for growing ni-containing thin film with single atomic layer deposition technology

The present invention provides a method for growing ni-containing thin film with single atomic layer deposition technology, comprising steps of: A) placing a substrate in a reaction chamber, and under the vacuum condition, passing a gas-phase Ni source in a form of pulses into the reaction chamber for deposition to... Institute Of Microelectronics Chinese Academy Of Sciences

Composite gate dielectric layer applied to group iii-v substrate and manufacturing the same

The present invention discloses a composite gate dielectric layer for a Group III-V substrate and a method for manufacturing the same. The composite gate dielectric layer comprises: an AlxY2-xO3 interface passivation layer formed onthe group III-V substrate; and a high dielectric insulating layer formed on the AlxY2-xO3 interface passivation layer,... Institute Of Microelectronics Chinese Academy Of Sciences

Three-terminal atomic switching device and manufacturing the same

There is provided a three-terminal atomic switching device and a method of manufacturing the same, which belongs to the field of microelectronics manufacturing and memory technology. The three-terminal atomic switching device includes: a stack structure including a source terminal and a drain terminal; a vertical trench formed by etching the... Institute Of Microelectronics Chinese Academy Of Sciences

Aluminum precursors for thin-film deposition, preparation method and use thereof

Provided is an aluminum precursor for thin-film deposition having a structure of formula (I) or (II), wherein R1, R2, R3, R4, R5, R6, and R7 each independently represent a hydrogen atom, C1˜C6 alkyl, halo-C1˜C6 alkyl, C2˜C5 alkenyl, halo-C2˜C5 alkenyl, C3˜C10 cycloalkyl, halo-C3˜C10 cycloalkyl, C6˜C10 aryl, halo-C6˜C10 aryl or —Si(R0)3, and... Institute Of Microelectronics Chinese Academy Of Sciences

Self-gated rram cell and manufacturing the same

The present disclosure discloses a self-gated RRAM cell and a manufacturing method thereof; which belong to the field of microelectronic technology. The self-gated RRAM cell comprises: a stacked structure containing multiple layers of conductive lower electrodes; a vertical trench formed by etching the stacked structure; a M8XY6 gated layer formed... Institute Of Microelectronics Chinese Academy Of Sciences

Gan-based power electronic device and manufacturing the same

A GaN-based power electronic device and a method for manufacturing the same is provided. The GaN-based power electronic device comprising a substrate and an epitaxial layer over the substrate. The epitaxial layer comprises a GaN-based heterostructure layer, a superlattice structure layer and a P-type cap layer. The superlattice structure layer... Institute Of Microelectronics Chinese Academy Of Sciences

Method of monolithic integration of hyperspectral image sensor

A method for monolithic integration of a hyperspectral image sensor is provided, which includes: forming a bottom reflecting layer on a surface of the photosensitive region of a CMOS image sensor wafer; forming a transparent cavity layer composed of N step structures on the bottom reflecting layer through area selective... Institute Of Microelectronics Chinese Academy Of Sciences

Semiconductor device structure and fabricating the same

A semiconductor device structure is provided. The semiconductor device includes a semiconductor substrate, a first device, and a second device. Each of the first and second devices includes a gate extending in a first direction, source/drain regions respectively formed on opposite first and second sides of the gate, dielectric spacers... Institute Of Microelectronics Chinese Academy Of Sciences

Metallization stack and semiconductor device and electronic device including the same

A metallization stack, comprising: at least an interlayer dielectric layer comprising a dielectric material and a negative capacitance material, wherein: at least a pair of first conductive interconnecting components formed in the interlayer dielectric layer, which are at least partially opposite to each other, comprise both the dielectric material and... Institute Of Microelectronics Chinese Academy Of Sciences

Method for manufacturing two-dimensional material structure and two-dimensional material device

A method for manufacturing a two-dimensional material structure and a resultant two-dimensional material device. The method comprises steps of: forming a sacrificial FIN structure on a substrate; covering the sacrificial FIN structure with a dielectric; releasing the sacrificial FIN structure; forming a carrier FIN structure at a position for releasing... Institute Of Microelectronics Chinese Academy Of Sciences

Method of manufacturing three-dimensional semiconductor device

A method of manufacturing three-dimensional semiconductor device, comprising the steps of: forming a stack structure of a plurality of a first material layers and a second material layers on a substrate in the memory cell region; etching said stack structure to form a plurality of trenches; forming channel layers in... Institute Of Microelectronics Chinese Academy Of Sciences

Three-dimensional memory device and manufacturing method thereof

A method for manufacturing three-dimensional memory, comprising the steps of: forming a stack structure composed of a plurality of first material layers and a plurality of second material layers on a substrate; etching the stack structure to expose the substrate, forming a plurality of first vertical openings; forming a filling... Institute Of Microelectronics Chinese Academy Of Sciences

Etching method

The invention discloses a novel dry etching method, which comprises the following steps: forming a to-be-etched layer on a semiconductor substrate; forming a masking material on the to-be-etched layer; carrying out dry etching on the masking material and the to-be-etched layer; simultaneously carrying out lateral etching (parallel to the surface... Institute Of Microelectronics Chinese Academy Of Sciences

Low-damage etching iii-nitride

A low-damage etching method for a III-Nitride structure is disclosed. The method comprises: forming an etching mask on the III-Nitride structure, which is formed on a substrate; and etching the III-Nitride with the etching mask, wherein a temperature of the substrate changes dynamically or is kept at a constant temperature... Institute Of Microelectronics Chinese Academy Of Sciences

Semiconductor devices having high-quality epitaxial layer and methods of manufacturing the same

A semiconductor device with a high-quality epitaxial layer and a method of manufacturing the same. The semiconductor device may include: a substrate; a fin-shaped first semiconductor layer spaced apart from the substrate; a second semiconductor layer at least partially surrounding a periphery of the first semiconductor layer; an isolation layer... Institute Of Microelectronics Chinese Academy Of Sciences

Nanometer semiconductor devices having high-quality epitaxial layer and methods of manufacturing the same

There are provided a nanometer semiconductor device with a high-quality epitaxial layer and a method of manufacturing the same. According to an embodiment, the semiconductor device may include: a substrate; at least one nanowire spaced apart from the substrate; at least one semiconductor layer, each formed around a periphery of... Institute Of Microelectronics Chinese Academy Of Sciences

Three-dimensional semiconductor device and manufacturing method therefor

A three-dimensional semiconductor device, comprising a plurality of memory cell transistors and a plurality of select transistors at least partially overlapped in the vertical direction, wherein each select transistor comprises a first drain, an active region and a common source formed in the substrate, distributed along the vertical direction, as... Institute Of Microelectronics Chinese Academy Of Sciences

Semiconductor devices and methods for manufacturing the same

Semiconductor devices and methods for manufacturing the same are provided. An example method may include: forming a sacrificial gate stack on a substrate; forming a gate spacer on sidewalls of the sacrificial gate stack; forming an interlayer dielectric layer on the substrate and planarizing it to expose the sacrificial gate... Institute Of Microelectronics Chinese Academy Of Sciences

Cmos devices having charged punch-through stopper layer to reduce punch-through and methods of manufacturing the same

Provided are a CMOS device having a charged punch-through stopper (PTS) layer to reduce punch-through and a method of manufacturing the same. In an embodiment, the CMOS semiconductor device includes an n-type device and a p-type device. The n-type device and the p-type device each may include: a fin structure... Institute Of Microelectronics Chinese Academy Of Sciences

Semiconductor devices having charged punch-through stopper layer to reduce punch-through and methods of manufacturing the same

Provided are a semiconductor device having a charged punch-through stopper (PTS) layer to reduce punch-through and a method of manufacturing the same. In an embodiment, the semiconductor device may include a fin structure formed on a substrate; an isolation layer formed on the substrate, wherein a portion of the fin... Institute Of Microelectronics Chinese Academy Of Sciences

Semiconductor device and manufacturing the same

A GaN-based enhancement-mode power electronic device and a method for manufacturing the same. The GaN-based enhancement-mode power electronic device comprises: a substrate; a thin barrier Al(In,Ga)N/GaN heterostructure formed on the substrate; a gate, a source, and a drain formed on the thin barrier Al(In,Ga)N/GaN heterostructure. An AlN or SiNx passivation... Institute Of Microelectronics Chinese Academy Of Sciences

Method for preparing titanium-aluminum alloy thin film

A method for preparing a TiAl alloy thin film, wherein a reaction chamber is provided, in which at least one substrate is placed; an aluminum precursor and a titanium precursor are introduced into the reaction chamber, wherein the aluminum precursor has a molecular structure of a structural formula (I); and... Institute Of Microelectronics Chinese Academy Of Sciences

Method for controlling magnetic multi-domain state

The present disclosure relates to the technical field of information data storage and processing. There is provided a method for regulating magnetic multi-domain state, comprising: when a current is applied to a magnetic thin film, applying an external magnetic field having a magnetic field strength of 0 to 4×105 A/m... Institute Of Microelectronics Chinese Academy Of Sciences

Method for manufacturing a finfet device

A method for manufacturing a FinFET device, including providing a substrate; implementing a source/drain doping on the substrate; etching the doped substrate to form a source region and a drain region; forming a fin channel between the source region and the drain region; and forming a gate on the Fin... Institute Of Microelectronics Chinese Academy Of Sciences

3 - d semiconductor device and manufacturing the same

A 3-D semiconductor device comprising a plurality of memory cells and a plurality of selection transistors, each of said plurality of memory cells comprises: a channel layer, distributed along a direction perpendicular to the substrate surface; a plurality of inter-layer insulating layers and a plurality of gate stack structures, alternately... Institute Of Microelectronics Chinese Academy Of Sciences

Method for cleaning lanthanum gallium silicate wafer

The present disclosure provides a method for cleaning a lanthanum gallium silicate wafer which comprises the following steps: at a step of 1, a cleaning solution constituted of phosphorous acid, hydrogen peroxide and deionized water is utilized to clean the lanthanum gallium silicate wafer with a megahertz sound wave; at... Institute Of Microelectronics Chinese Academy Of Sciences








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