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Inston Inc patents


Recent patent applications related to Inston Inc. Inston Inc is listed as an Agent/Assignee. Note: Inston Inc may have other listings under different names/spellings. We're not affiliated with Inston Inc, we're just tracking patents.

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Systems for implementing word line pulse techniques in magnetoelectric junctions

Systems and methods for performing word line pulse techniques in magnetoelectric junctions in accordance with embodiments of the invention are disclosed. In one embodiment, a magnetoelectric random access memory (meram) circuit, including, a plurality of voltage controlled magnetic tunnel junction bits (mejs) each magnetoelectric junction connected to the drain of an mos transistor, the combination including three terminals, each connected to a bit, source, and at least one word line, in an array, and a driver circuit, including a bit line driver, and a word line driver the bit line driver, the driver circuit generates voltage pulses for application to the magnetoelectric junction bit, the output of the driver circuit is connected to the word line, which in turn is connected to the gate of the mos access transistor in each meram cell, thereby generating a square voltage pulse across the magnetoelectric junction bit.. ... Inston Inc

Systems for source line sensing of magnetoelectric junctions

Systems for performing source line sensing of magnetoelectric junctions in accordance with embodiments of the invention are disclosed. In one embodiment, a meram circuit includes a plurality of voltage controlled magnetic tunnel junction bits, application of a voltage with opposite polarity increases the perpendicular magnetic anisotropy and magnetic coercivity of the free layer through the vcma effect, each magnetoelectric junction is connected to the drain of an mos transistor, the combination includes a meram cell, each meram cell includes three terminals, each connected respectively to a bit line, a source line, and at least one word line, in an array, a pulse generator and a write mos transistor connected to the bit line and the source line, a sense amplifier and a sense mos transistor connected to the source line and the bit line, and a current source circuit connected to the source line and the reference line.. ... Inston Inc

Systems and methods for implementing magnetoelectric junctions including integrated magnetization components

Systems and methods in accordance with embodiments of the invention implement magnetoelectric junctions that include integrated magnetization components. In one embodiment, a magnetoelectric junction includes: a first fixed layer; a free layer; a dielectric layer disposed between the first fixed layer and the free layer; at least one magnetization layer that is disposed proximate the free layer; where: the first fixed layer is magnetized in a first direction; the free layer can adopt a magnetization direction that is either substantially parallel with or antiparallel with the first direction; the at least one magnetization layer is magnetized in a second direction that is orthogonal to the first direction; the magnetoelectric junction is characterized by a vcma coefficient of at least approximately 80 fj/v·m; and the magnetoelectric junction is configured such that a voltage pulse of a proper length in time can cause the free layer to invert its magnetization direction.. ... Inston Inc








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