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Intermolecular, Inc. patents


      
Recent patent applications related to Intermolecular, Inc.. Intermolecular, Inc. is listed as an Agent/Assignee. Note: Intermolecular, Inc. may have other listings under different names/spellings. We're not affiliated with Intermolecular, Inc., we're just tracking patents.

ARCHIVE: New 2014 2013 2012 2011 2010 2009 | Company Directory "I" | Intermolecular, Inc.-related inventors



Nonvolatile resistive memory element with a silicon-based switching layer

Intermolecular

Nonvolatile resistive memory element with a silicon-based switching layer

Search recent Press Releases: Intermolecular, Inc.-related press releases
Count Application # Date Intermolecular, Inc. patents (updated weekly) - BOOKMARK this page
12014032250710/30/14 new patent  Systems, methods, and apparatus for production coatings of low-emissivity glass
22014032288410/30/14 new patent  Nonvolatile resistive memory element with a silicon-based switching layer
32014031533110/23/14Screening of surface passivation processes for germanium channels
42014030852810/16/14Systems, methods, and apparatus for production coatings of low-emissivity glass
52014030267110/09/14Selective etching of copper and copper-barrier materials by an aqueous base solution with fluoride addition
62014026166009/18/14Tcos for heterojunction solar cells
72014026415509/18/14High-selectivity wet patterning of source-drain electrodes over taos for a bce device structure
82014026423909/18/14Using multi-layer mimcaps in the tunneling regime as selector element for a cross-bar memory array
92014026830109/18/14Low-emissivity panels including magnetic layers
102014026831609/18/14Systems, methods, and apparatus for production coatings of low-emissivity glass including a ternary alloy
112014026831709/18/14High solar gain low-e panel and method for forming the same
122014026834809/18/14Anti-reflective coatings with porosity gradient and methods for forming the same
132014026834909/18/14Optical coatings with plate-shaped particles and methods for forming the same
142014026899309/18/14Nonvolatile resistive memory element with an oxygen-gettering layer
152014027212709/18/14Anti-glare coatings with sacrificial surface roughening agents and methods for forming the same
162014027229009/18/14Polymer anti-glare coatings and methods for forming the same
172014027233509/18/14Low-e glazing performance by seed structure optimization
182014027235309/18/14Color shift of high lsg low emissivity coating after heat treatment
192014027235409/18/14Method to generate high lsg low-emissivity coating with same color after heat treatment
202014027238409/18/14Anti-reflection coatings with aqueous particle dispersions and methods for forming the same
212014027238709/18/14Anti-glare coatings with aqueous particle dispersions and methods for forming the same
222014027239009/18/14Low-e panel with improved barrier layer process window and method for forming the same
232014027239509/18/14Low-emissivity glass including spacer layers compatible with heat treatment
242014027245409/18/14Barrier layers for silver reflective coatings and hpc workflows for rapid screening of materials for such barrier layers
252014027245509/18/14Titanium nickel niobium alloy barrier for low-emissivity coatings
262014027333309/18/14Methods for fabricating znose alloys
272014027346709/18/14Polycrystalline-silicon etch with low-peroxide apm
282014027349709/18/14Wet processing systems and methods with replenishment
292014026202809/18/14Non-contact wet-process cell confining liquid to a region of a solid surface by differential pressure
302014026274909/18/14Methods of plasma surface treatment in a pvd chamber
312014026422409/18/14Performance enhancement of forming-free reram devices using 3d nanoparticles
322014026424109/18/14Znte on tin or pt electrodes as a resistive switching element for reram applications
332014026425209/18/14Current selector for non-volatile memory in a cross bar array based on defect and band engineering metal-dielectric-metal stacks
342014026428109/18/14Channel-last methods for making fets
352014026432009/18/14Compositional graded igzo thin film transistor
362014026432109/18/14Method of fabricating igzo by sputtering in oxidizing gas
372014026449209/18/14Counter-doped low-power finfet
382014026450709/18/14Fluorine passivation in cmos image sensors
392014026463409/18/14Finfet for rf and analog integrated circuits
402014026470809/18/14Optical absorbers
412014026474709/18/14Deposition of anisotropic dielectric layers orientationally matched to the physically separated substrate
422014026482509/18/14Ultra-low resistivity contacts
432014026487109/18/14Method to increase interconnect reliability
442014026837709/18/14Ultrathin coating for one way mirror applications
452014026900409/18/14Method for improving data retention of reram chips operating at low operating temperatures
462014027211209/18/14Combinatorial methods and systems for developing electrochromic materials and devices
472014027330009/18/14Method for forming reram chips operating at low operating temperatures
482014027330909/18/14Controlling radical lifetimes in a remote plasma chamber
492014027331109/18/14Optical absorbers
502014027331409/18/14High productivity combinatorial workflow to screen and design chalcogenide materials as non volatile memory current selector
512014027334009/18/14High productivity combinatorial screening for stable metal oxide tfts
522014027334109/18/14Methods for forming back-channel-etch devices with copper-based electrodes
532014027340409/18/14Advanced targeted microwave degas system
542014027342709/18/14Electrode for low-leakage devices
552014027349309/18/14Hydrogen plasma cleaning of germanium oxide surfaces
562014027352509/18/14Atomic layer deposition of reduced-leakage post-transition metal oxide films
572014025611109/11/14Nonvolatile memory elements
582014025256509/11/14Nucleation interface for high-k layer on germanium
592014024664009/04/14Doped electrodes used to inhibit oxygen loss in reram device
602014024764909/04/14Bipolar resistive-switching memory with a single diode per memory cell
612014023174408/21/14Methods for forming resistive switching memory elements
622014023095508/21/14Systems for discretized processing of regions of a substrate
632014023170408/21/14Silicon texturing formulations
642014022505608/14/14Resistive-switching memory elements having improved switching characteristics
652014022787108/14/14Formation of a masking layer on a dielectric region to facilitate formation of a capping layer on electrically conductive regions separated by the dielectric region
662014022788008/14/14Combinatorial plasma enhanced deposition and etchtechniques
672014019126207/10/14Material with tunable index of refraction
682014019136507/10/14Device design for partially oriented rutile dielectrics
692014018267007/03/14Light trapping and antireflective coatings
702014018369607/03/14Methods to improve leakage for zro2 based high k mim capacitor
712014018503407/03/14Method to extend single wavelength ellipsometer to obtain spectra of refractive index
722014018659807/03/14Base-layer consisting of two materials layer with extreme high/low index in low-e coating to improve the neutral color and transmittance performance
732014018699507/03/14Method of fabricating cigs solar cells with high band gap by sequential processing
742014018704107/03/14High dose ion-implanted photoresist removal using organic solvent and transition metal mixtures
752014018705107/03/14Poly removal for replacement gate with an apm mixture
762014018705207/03/14Selective etching of hafnium oxide using diluted hydrofluoric acid
772014018266507/03/14Optical absorbers
782014018303607/03/14In situ sputtering target measurement
792014018316107/03/14Methods and systems for site-isolated combinatorial substrate processing using a mask
802014018343207/03/14Moox-based resistance switching materials
812014018343907/03/14Current selector for non-volatile memory in a cross bar array based on defect and band engineering metal-dielectric-metal stacks
822014018366407/03/14Fullerene-based capacitor electrode
832014018366607/03/14Flourine-stabilized interface
842014018369507/03/14Methods for reproducible flash layer deposition
852014018369707/03/14High work function, manufacturable top electrode
862014018373707/03/14Diffusion barriers
872014018535707/03/14Barrier design for steering elements
882014018661707/03/14Low-emissivity coatings
892014018701507/03/14Methods to improve leakage for zro2 based high k mim capacitor
902014018701607/03/14High work function, manufacturable top electrode
912014018701807/03/14Methods for reproducible flash layer deposition
922014018826407/03/14Workflow manager and bar coding system for processing of samples/substrates in hpc (high productivity combinatorial) r&d environment
932014017535906/26/14Diffusion barrier layer for resistive random access memory cells
942014017561806/26/14Transition metal aluminate and high k dielectric semiconductor stack
952014017704206/26/14Novel silver barrier materials for low-emissivity applications
962014017865706/26/14Antireflection coatings
972014017908206/26/14Selective etching of hafnium oxide using non-aqueous solutions
982014017910706/26/14Etching silicon nitride using dilute hydrofluoric acid
992014017911206/26/14High productivity combinatorial techniques for titanium nitride etching
1002014017448106/26/14Processing and cleaning substrates
1012014017454006/26/14Ald process window combinatorial screening tool
1022014017465606/26/14Method to improve the operational robustness and safety of combinatorial processing systems
1032014017490706/26/14High deposition rate chamber with co-sputtering capabilities
1042014017491006/26/14Sputter gun shield
1052014017491106/26/14Methods and systems for reducing particles during physical vapor deposition
1062014017491806/26/14Sputter gun
1072014017492106/26/14Multi-piece target and magnetron to prevent sputtering of target backing materials
1082014017542206/26/14Deposition of rutile films with very high dielectric constant
1092014017556706/26/14Method of depositing films with narrow-band conductive properties
1102014017560306/26/14Method of forming an asymmetric mimcap or a schottky device as a selector element for a cross-bar memory array
1112014017560406/26/14Two step deposition of molybdenum dioxide electrode for high quality dielectric stacks
1122014017737806/26/14High dilution ratio by successively preparing and diluting chemicals
1132014017857806/26/14Barrier layers for silver reflective coatings and hpc workflows for rapid screening of materials for such barrier layers
1142014017858306/26/14Combinatorial methods and systems for developing thermochromic materials and devices
1152014017903006/26/14Dissolution rate monitor
1162014017903306/26/14Methods for forming templated materials
1172014017909506/26/14Methods and systems for controlling gate dielectric interfaces of mosfets
1182014017910006/26/14Method to control depth profiles of dopants using a remote plasma source
1192014017911306/26/14Surface treatment methods and systems for substrate processing
1202014017912306/26/14Site-isolated rapid thermal processing methods and apparatus
1212014016647206/19/14Method and apparatus for temperature control to improve low emissivity coatings
1222014016875906/19/14Methods and apparatuses for patterned low emissivity panels
1232014017030806/19/14Antireflective coatings with gradation and methods for forming the same
1242014017033806/19/14Pvd chamber and process for over-coating layer to improve emissivity for low emissivity coating
1252014017041306/19/14Silver based conductive layer for flexible electronics
1262014017042106/19/14Low-e panel with improved barrier layer and method for forming the same
1272014017042206/19/14Low emissivity coating with optimal base layer material and layer stack
1282014017043406/19/14Two layer ag process for low emissivity coatings
1292014016605006/19/14Chuck for mounting a semiconductor wafer for liquid immersion processing
1302014016610706/19/14Back-contact electron reflectors enhancing thin film solar cell efficiency
1312014016613406/19/14Pump with reduced number of moving parts
1322014016661606/19/14Combinatorial processing using a remote plasma source
1332014016684006/19/14Substrate carrier
1342014016695806/19/14Controlling reram forming voltage with doping
1352014016722106/19/14Methods to improve leakage of high k materials
1362014016722306/19/14Semiconductor cooling device
1372014016906206/19/14Methods of manufacturing embedded bipolar switching resistive memory
1382014017004906/19/14Low refractive index material by sputtering deposition method
1392014017033506/19/14Methods and apparatus for combinatorial pecvd or peald
1402014017077506/19/14Hpc workflow for rapid screening of materials and stacks for stt-ram
1412014017080206/19/14Absorber layer for a thin film photovoltaic device with a double-graded band gap
1422014017080306/19/14Cigs absorber formed by co-sputtered indium
1432014017080606/19/14Tcos for high-efficiency crystalline si heterojunction solar cells
1442014017083306/19/14Methods to improve leakage of high k materials
1452014017085706/19/14Customizing etch selectivity with sequential multi-stage etches with complementary etchants
1462014016238406/12/14Pvd-ald-cvd hybrid hpc for work function material screening
1472014015819006/12/14Absorbers for high efficiency thin-film pv
1482014015912006/12/14Conformal doping
1492014016198906/12/14Anti-glare using a two-step texturing process
1502014016199006/12/14Anti-glare glass/substrate via novel specific combinations of dry and wet processes
1512014016239706/12/14High-efficiency thin-film photovoltaics with controlled homogeneity and defects
1522014015162606/05/14Selector device using low leakage dielectric mimcap diode
1532014015485906/05/14Methods and vehicles for high productivity combinatorial testing of materials for resistive random access memory cells
1542014015024506/05/14Pneumatic clamping mechanism for cells with adjustable height
1552014014759405/29/14Magnesium fluoride and magnesium oxyfluoride based anti-reflection coatings via chemical solution deposition processes
1562014014447105/29/14Contamination control, rinsing, and purging methods to extend the life of components within combinatorial processing systems
1572014014451205/29/14Methods and systems for dispensing different liquids for high productivity combinatorial processing
1582014014477105/29/14Cooling efficiency method for fluid cooled sputter guns
1592014014735005/29/14Cleaner for reactor component cleaning
1602014014758705/29/14Combinatorial spin deposition
1612014014759305/29/14Liquid cooled sputter apertured shields
1622014014153405/22/14Dielectric doping using high productivity combinatorial methods
1632014013860205/22/14Controlled localized defect paths for resistive memories
1642014014153405/22/14Dielectric doping using high productivity combinatorial methods
1652014013860205/22/14Controlled localized defect paths for resistive memories
1662014013484905/15/14Combinatorial site isolated plasma assisted deposition
1672014013092205/15/14Control methods and hardware configurations for ozone delivery systems
1682014013326505/15/14Contactless magnetically driven agitation systems
1692014013484905/15/14Combinatorial site isolated plasma assisted deposition
1702014013092205/15/14Control methods and hardware configurations for ozone delivery systems
1712014013326505/15/14Contactless magnetically driven agitation systems
1722014012403805/08/14Reactor cell isolation using differential pressure in a combinatorial reactor
1732014012435905/08/14New magnet design which improves erosion profile for pvd systems
1742014012472505/08/14Resistive random access memory cells having doped current limiting layers
1752014012478805/08/14Chemical vapor deposition system
1762014012481705/08/14Contact layers
1772014012742205/08/14Method and apparatus for high-k gate performance improvement and combinatorial processing
1782014012788705/08/14Chemical vapor deposition system
1792014012797405/08/14Combinatorial tool for mechanically-assisted surface polishing and cleaning
1802014012403805/08/14Reactor cell isolation using differential pressure in a combinatorial reactor
1812014012435905/08/14New magnet design which improves erosion profile for pvd systems
1822014012472505/08/14Resistive random access memory cells having doped current limiting layers
1832014012478805/08/14Chemical vapor deposition system
1842014012481705/08/14Contact layers
1852014012742205/08/14Method and apparatus for high-k gate performance improvement and combinatorial processing
1862014012788705/08/14Chemical vapor deposition system
1872014012797405/08/14Combinatorial tool for mechanically-assisted surface polishing and cleaning
1882014011076404/24/14Method to control amorphous oxide layer formation at interfaces of thin film stacks for memory and logic components
1892014011340304/24/14High efficiency cztse by a two-step approach
1902014011081304/24/14Absorbers for high efficiency thin-film pv
1912014011076404/24/14Method to control amorphous oxide layer formation at interfaces of thin film stacks for memory and logic components
1922014011340304/24/14High efficiency cztse by a two-step approach
1932014011081304/24/14Absorbers for high efficiency thin-film pv
1942014010328204/17/14Diffusion barrier layer for resistive random access memory cells
1952014010328404/17/14Reram cells including taxsiyn embedded resistors
1962014010248804/17/14Method and system for improving performance and preventing corrosion in multi-module cleaning chamber
1972014010656104/17/14Graphene barrier layers for interconnects and methods for forming the same
1982014010903004/17/14Method of determining electromigration (em) lifetimes and lifetime criteria
1992014010328204/17/14Diffusion barrier layer for resistive random access memory cells
2002014010328404/17/14Reram cells including taxsiyn embedded resistors
2012014010248804/17/14Method and system for improving performance and preventing corrosion in multi-module cleaning chamber
2022014010656104/17/14Graphene barrier layers for interconnects and methods for forming the same
2032014010903004/17/14Method of determining electromigration (em) lifetimes and lifetime criteria
2042014009978504/10/14Sacrificial low work function cap layer
2052014009978504/10/14Sacrificial low work function cap layer
2062014009978504/10/14Sacrificial low work function cap layer
2072014009059604/03/14Methods of combinatorial processing for screening multiple samples on a semiconductor substrate
2082014009066804/03/14In-situ cleaning assembly
2092014009246204/03/14Electrochromic device with improved transparent conductor and method for forming the same
2102014009403704/03/14Method and apparatus for preventing native oxide regrowth
2112014009059604/03/14Methods of combinatorial processing for screening multiple samples on a semiconductor substrate
2122014009066804/03/14In-situ cleaning assembly
2132014009246204/03/14Electrochromic device with improved transparent conductor and method for forming the same
2142014009403704/03/14Method and apparatus for preventing native oxide regrowth
2152014008423603/27/14Ald processing techniques for forming non-volatile resistive switching memories
2162014008494803/27/14Test vehicles for evaluating resistance of thin layers
2172014008749003/27/14Method and apparatus for improving particle performance
2182014008423603/27/14Ald processing techniques for forming non-volatile resistive switching memories
2192014008494803/27/14Test vehicles for evaluating resistance of thin layers
2202014008749003/27/14Method and apparatus for improving particle performance
2212014007714703/20/14Methods for selective etching of a multi-layer substrate
2222014007733603/20/14Leakage reduction in dram mim capacitors
2232014007733703/20/14High temperature ald process for metal oxide for dram applications
2242014007880803/20/14Embedded nonvolatile memory elements having resistive switching characteristics
2252014008023303/20/14Combinatorial optimization of interlayer parameters
2262014008025003/20/14Method of fabricating high efficiency cigs solar cells
2272014008028203/20/14Leakage reduction in dram mim capacitors
2282014008028403/20/14High temperature ald process of metal oxide for dram applications
2292014008032203/20/14Emissivity profile control for thermal uniformity
2302014007714703/20/14Methods for selective etching of a multi-layer substrate
2312014007733603/20/14Leakage reduction in dram mim capacitors
2322014007733703/20/14High temperature ald process for metal oxide for dram applications
2332014007880803/20/14Embedded nonvolatile memory elements having resistive switching characteristics
2342014008023303/20/14Combinatorial optimization of interlayer parameters
2352014008025003/20/14Method of fabricating high efficiency cigs solar cells
2362014008028203/20/14Leakage reduction in dram mim capacitors
2372014008028403/20/14High temperature ald process of metal oxide for dram applications
2382014008032203/20/14Emissivity profile control for thermal uniformity
2392014007310703/13/14Atomic layer deposition of metal oxide materials for memory applications
2402014007021303/13/14Methods for discretized processing and process sequence integration of regions of a substrate
2412014007143503/13/14High throughput quantum efficiency combinatorial characterization tool and method for combinatorial solar test substrates
2422014007310703/13/14Atomic layer deposition of metal oxide materials for memory applications
2432014007021303/13/14Methods for discretized processing and process sequence integration of regions of a substrate
2442014007143503/13/14High throughput quantum efficiency combinatorial characterization tool and method for combinatorial solar test substrates
2452014006578803/06/14Combinatorial approach for screening of ald film stacks
2462014006579903/06/14Methods and systems for low resistance contact formation
2472014006581903/06/14Methods and systems for low resistance contact formation
2482014006578803/06/14Combinatorial approach for screening of ald film stacks
2492014006579903/06/14Methods and systems for low resistance contact formation


ARCHIVE: New 2014 2013 2012 2011 2010 2009



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This listing is an abstract for educational and research purposes is only meant as a recent sample of applications filed, not a comprehensive history. Freshpatents.com is not affiliated or associated with Intermolecular, Inc. in any way and there may be associated servicemarks. This data is also published to the public by the USPTO and available for free on their website. Note that there may be alternative spellings for Intermolecular, Inc. with additional patents listed. Browse our Agent directory for other possible listings. Page by FreshPatents.com

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