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Intermolecular, Inc. patents


      
Recent patent applications related to Intermolecular, Inc.. Intermolecular, Inc. is listed as an Agent/Assignee. Note: Intermolecular, Inc. may have other listings under different names/spellings. We're not affiliated with Intermolecular, Inc., we're just tracking patents.

ARCHIVE: New 2014 2013 2012 2011 2010 2009 | Company Directory "I" | Intermolecular, Inc.-related inventors



Systems, methods, and apparatus for production coatings of low-emissivity glass

Intermolecular

Systems, methods, and apparatus for production coatings of low-emissivity glass

Selective etching of copper and copper-barrier materials by an aqueous base solution with fluoride addition

Intermolecular

Selective etching of copper and copper-barrier materials by an aqueous base solution with fluoride addition

Search recent Press Releases: Intermolecular, Inc.-related press releases
Count Application # Date Intermolecular, Inc. patents (updated weekly) - BOOKMARK this page
12014031533110/23/14 new patent  Screening of surface passivation processes for germanium channels
22014030852810/16/14Systems, methods, and apparatus for production coatings of low-emissivity glass
32014030267110/09/14Selective etching of copper and copper-barrier materials by an aqueous base solution with fluoride addition
42014026166009/18/14Tcos for heterojunction solar cells
52014026415509/18/14High-selectivity wet patterning of source-drain electrodes over taos for a bce device structure
62014026423909/18/14Using multi-layer mimcaps in the tunneling regime as selector element for a cross-bar memory array
72014026830109/18/14Low-emissivity panels including magnetic layers
82014026831609/18/14Systems, methods, and apparatus for production coatings of low-emissivity glass including a ternary alloy
92014026831709/18/14High solar gain low-e panel and method for forming the same
102014026834809/18/14Anti-reflective coatings with porosity gradient and methods for forming the same
112014026834909/18/14Optical coatings with plate-shaped particles and methods for forming the same
122014026899309/18/14Nonvolatile resistive memory element with an oxygen-gettering layer
132014027212709/18/14Anti-glare coatings with sacrificial surface roughening agents and methods for forming the same
142014027229009/18/14Polymer anti-glare coatings and methods for forming the same
152014027233509/18/14Low-e glazing performance by seed structure optimization
162014027235309/18/14Color shift of high lsg low emissivity coating after heat treatment
172014027235409/18/14Method to generate high lsg low-emissivity coating with same color after heat treatment
182014027238409/18/14Anti-reflection coatings with aqueous particle dispersions and methods for forming the same
192014027238709/18/14Anti-glare coatings with aqueous particle dispersions and methods for forming the same
202014027239009/18/14Low-e panel with improved barrier layer process window and method for forming the same
212014027239509/18/14Low-emissivity glass including spacer layers compatible with heat treatment
222014027245409/18/14Barrier layers for silver reflective coatings and hpc workflows for rapid screening of materials for such barrier layers
232014027245509/18/14Titanium nickel niobium alloy barrier for low-emissivity coatings
242014027333309/18/14Methods for fabricating znose alloys
252014027346709/18/14Polycrystalline-silicon etch with low-peroxide apm
262014027349709/18/14Wet processing systems and methods with replenishment
272014026202809/18/14Non-contact wet-process cell confining liquid to a region of a solid surface by differential pressure
282014026274909/18/14Methods of plasma surface treatment in a pvd chamber
292014026422409/18/14Performance enhancement of forming-free reram devices using 3d nanoparticles
302014026424109/18/14Znte on tin or pt electrodes as a resistive switching element for reram applications
312014026425209/18/14Current selector for non-volatile memory in a cross bar array based on defect and band engineering metal-dielectric-metal stacks
322014026428109/18/14Channel-last methods for making fets
332014026432009/18/14Compositional graded igzo thin film transistor
342014026432109/18/14Method of fabricating igzo by sputtering in oxidizing gas
352014026449209/18/14Counter-doped low-power finfet
362014026450709/18/14Fluorine passivation in cmos image sensors
372014026463409/18/14Finfet for rf and analog integrated circuits
382014026470809/18/14Optical absorbers
392014026474709/18/14Deposition of anisotropic dielectric layers orientationally matched to the physically separated substrate
402014026482509/18/14Ultra-low resistivity contacts
412014026487109/18/14Method to increase interconnect reliability
422014026837709/18/14Ultrathin coating for one way mirror applications
432014026900409/18/14Method for improving data retention of reram chips operating at low operating temperatures
442014027211209/18/14Combinatorial methods and systems for developing electrochromic materials and devices
452014027330009/18/14Method for forming reram chips operating at low operating temperatures
462014027330909/18/14Controlling radical lifetimes in a remote plasma chamber
472014027331109/18/14Optical absorbers
482014027331409/18/14High productivity combinatorial workflow to screen and design chalcogenide materials as non volatile memory current selector
492014027334009/18/14High productivity combinatorial screening for stable metal oxide tfts
502014027334109/18/14Methods for forming back-channel-etch devices with copper-based electrodes
512014027340409/18/14Advanced targeted microwave degas system
522014027342709/18/14Electrode for low-leakage devices
532014027349309/18/14Hydrogen plasma cleaning of germanium oxide surfaces
542014027352509/18/14Atomic layer deposition of reduced-leakage post-transition metal oxide films
552014025611109/11/14Nonvolatile memory elements
562014025256509/11/14Nucleation interface for high-k layer on germanium
572014024664009/04/14Doped electrodes used to inhibit oxygen loss in reram device
582014024764909/04/14Bipolar resistive-switching memory with a single diode per memory cell
592014023174408/21/14Methods for forming resistive switching memory elements
602014023095508/21/14Systems for discretized processing of regions of a substrate
612014023170408/21/14Silicon texturing formulations
622014022505608/14/14Resistive-switching memory elements having improved switching characteristics
632014022787108/14/14Formation of a masking layer on a dielectric region to facilitate formation of a capping layer on electrically conductive regions separated by the dielectric region
642014022788008/14/14Combinatorial plasma enhanced deposition and etchtechniques
652014019126207/10/14Material with tunable index of refraction
662014019136507/10/14Device design for partially oriented rutile dielectrics
672014018267007/03/14Light trapping and antireflective coatings
682014018369607/03/14Methods to improve leakage for zro2 based high k mim capacitor
692014018503407/03/14Method to extend single wavelength ellipsometer to obtain spectra of refractive index
702014018659807/03/14Base-layer consisting of two materials layer with extreme high/low index in low-e coating to improve the neutral color and transmittance performance
712014018699507/03/14Method of fabricating cigs solar cells with high band gap by sequential processing
722014018704107/03/14High dose ion-implanted photoresist removal using organic solvent and transition metal mixtures
732014018705107/03/14Poly removal for replacement gate with an apm mixture
742014018705207/03/14Selective etching of hafnium oxide using diluted hydrofluoric acid
752014018266507/03/14Optical absorbers
762014018303607/03/14In situ sputtering target measurement
772014018316107/03/14Methods and systems for site-isolated combinatorial substrate processing using a mask
782014018343207/03/14Moox-based resistance switching materials
792014018343907/03/14Current selector for non-volatile memory in a cross bar array based on defect and band engineering metal-dielectric-metal stacks
802014018366407/03/14Fullerene-based capacitor electrode
812014018366607/03/14Flourine-stabilized interface
822014018369507/03/14Methods for reproducible flash layer deposition
832014018369707/03/14High work function, manufacturable top electrode
842014018373707/03/14Diffusion barriers
852014018535707/03/14Barrier design for steering elements
862014018661707/03/14Low-emissivity coatings
872014018701507/03/14Methods to improve leakage for zro2 based high k mim capacitor
882014018701607/03/14High work function, manufacturable top electrode
892014018701807/03/14Methods for reproducible flash layer deposition
902014018826407/03/14Workflow manager and bar coding system for processing of samples/substrates in hpc (high productivity combinatorial) r&d environment
912014017535906/26/14Diffusion barrier layer for resistive random access memory cells
922014017561806/26/14Transition metal aluminate and high k dielectric semiconductor stack
932014017704206/26/14Novel silver barrier materials for low-emissivity applications
942014017865706/26/14Antireflection coatings
952014017908206/26/14Selective etching of hafnium oxide using non-aqueous solutions
962014017910706/26/14Etching silicon nitride using dilute hydrofluoric acid
972014017911206/26/14High productivity combinatorial techniques for titanium nitride etching
982014017448106/26/14Processing and cleaning substrates
992014017454006/26/14Ald process window combinatorial screening tool
1002014017465606/26/14Method to improve the operational robustness and safety of combinatorial processing systems
1012014017490706/26/14High deposition rate chamber with co-sputtering capabilities
1022014017491006/26/14Sputter gun shield
1032014017491106/26/14Methods and systems for reducing particles during physical vapor deposition
1042014017491806/26/14Sputter gun
1052014017492106/26/14Multi-piece target and magnetron to prevent sputtering of target backing materials
1062014017542206/26/14Deposition of rutile films with very high dielectric constant
1072014017556706/26/14Method of depositing films with narrow-band conductive properties
1082014017560306/26/14Method of forming an asymmetric mimcap or a schottky device as a selector element for a cross-bar memory array
1092014017560406/26/14Two step deposition of molybdenum dioxide electrode for high quality dielectric stacks
1102014017737806/26/14High dilution ratio by successively preparing and diluting chemicals
1112014017857806/26/14Barrier layers for silver reflective coatings and hpc workflows for rapid screening of materials for such barrier layers
1122014017858306/26/14Combinatorial methods and systems for developing thermochromic materials and devices
1132014017903006/26/14Dissolution rate monitor
1142014017903306/26/14Methods for forming templated materials
1152014017909506/26/14Methods and systems for controlling gate dielectric interfaces of mosfets
1162014017910006/26/14Method to control depth profiles of dopants using a remote plasma source
1172014017911306/26/14Surface treatment methods and systems for substrate processing
1182014017912306/26/14Site-isolated rapid thermal processing methods and apparatus
1192014016647206/19/14Method and apparatus for temperature control to improve low emissivity coatings
1202014016875906/19/14Methods and apparatuses for patterned low emissivity panels
1212014017030806/19/14Antireflective coatings with gradation and methods for forming the same
1222014017033806/19/14Pvd chamber and process for over-coating layer to improve emissivity for low emissivity coating
1232014017041306/19/14Silver based conductive layer for flexible electronics
1242014017042106/19/14Low-e panel with improved barrier layer and method for forming the same
1252014017042206/19/14Low emissivity coating with optimal base layer material and layer stack
1262014017043406/19/14Two layer ag process for low emissivity coatings
1272014016605006/19/14Chuck for mounting a semiconductor wafer for liquid immersion processing
1282014016610706/19/14Back-contact electron reflectors enhancing thin film solar cell efficiency
1292014016613406/19/14Pump with reduced number of moving parts
1302014016661606/19/14Combinatorial processing using a remote plasma source
1312014016684006/19/14Substrate carrier
1322014016695806/19/14Controlling reram forming voltage with doping
1332014016722106/19/14Methods to improve leakage of high k materials
1342014016722306/19/14Semiconductor cooling device
1352014016906206/19/14Methods of manufacturing embedded bipolar switching resistive memory
1362014017004906/19/14Low refractive index material by sputtering deposition method
1372014017033506/19/14Methods and apparatus for combinatorial pecvd or peald
1382014017077506/19/14Hpc workflow for rapid screening of materials and stacks for stt-ram
1392014017080206/19/14Absorber layer for a thin film photovoltaic device with a double-graded band gap
1402014017080306/19/14Cigs absorber formed by co-sputtered indium
1412014017080606/19/14Tcos for high-efficiency crystalline si heterojunction solar cells
1422014017083306/19/14Methods to improve leakage of high k materials
1432014017085706/19/14Customizing etch selectivity with sequential multi-stage etches with complementary etchants
1442014016238406/12/14Pvd-ald-cvd hybrid hpc for work function material screening
1452014015819006/12/14Absorbers for high efficiency thin-film pv
1462014015912006/12/14Conformal doping
1472014016198906/12/14Anti-glare using a two-step texturing process
1482014016199006/12/14Anti-glare glass/substrate via novel specific combinations of dry and wet processes
1492014016239706/12/14High-efficiency thin-film photovoltaics with controlled homogeneity and defects
1502014015162606/05/14Selector device using low leakage dielectric mimcap diode
1512014015485906/05/14Methods and vehicles for high productivity combinatorial testing of materials for resistive random access memory cells
1522014015024506/05/14Pneumatic clamping mechanism for cells with adjustable height
1532014014759405/29/14Magnesium fluoride and magnesium oxyfluoride based anti-reflection coatings via chemical solution deposition processes
1542014014447105/29/14Contamination control, rinsing, and purging methods to extend the life of components within combinatorial processing systems
1552014014451205/29/14Methods and systems for dispensing different liquids for high productivity combinatorial processing
1562014014477105/29/14Cooling efficiency method for fluid cooled sputter guns
1572014014735005/29/14Cleaner for reactor component cleaning
1582014014758705/29/14Combinatorial spin deposition
1592014014759305/29/14Liquid cooled sputter apertured shields
1602014014153405/22/14Dielectric doping using high productivity combinatorial methods
1612014013860205/22/14Controlled localized defect paths for resistive memories
1622014014153405/22/14Dielectric doping using high productivity combinatorial methods
1632014013860205/22/14Controlled localized defect paths for resistive memories
1642014013484905/15/14Combinatorial site isolated plasma assisted deposition
1652014013092205/15/14Control methods and hardware configurations for ozone delivery systems
1662014013326505/15/14Contactless magnetically driven agitation systems
1672014013484905/15/14Combinatorial site isolated plasma assisted deposition
1682014013092205/15/14Control methods and hardware configurations for ozone delivery systems
1692014013326505/15/14Contactless magnetically driven agitation systems
1702014012403805/08/14Reactor cell isolation using differential pressure in a combinatorial reactor
1712014012435905/08/14New magnet design which improves erosion profile for pvd systems
1722014012472505/08/14Resistive random access memory cells having doped current limiting layers
1732014012478805/08/14Chemical vapor deposition system
1742014012481705/08/14Contact layers
1752014012742205/08/14Method and apparatus for high-k gate performance improvement and combinatorial processing
1762014012788705/08/14Chemical vapor deposition system
1772014012797405/08/14Combinatorial tool for mechanically-assisted surface polishing and cleaning
1782014012403805/08/14Reactor cell isolation using differential pressure in a combinatorial reactor
1792014012435905/08/14New magnet design which improves erosion profile for pvd systems
1802014012472505/08/14Resistive random access memory cells having doped current limiting layers
1812014012478805/08/14Chemical vapor deposition system
1822014012481705/08/14Contact layers
1832014012742205/08/14Method and apparatus for high-k gate performance improvement and combinatorial processing
1842014012788705/08/14Chemical vapor deposition system
1852014012797405/08/14Combinatorial tool for mechanically-assisted surface polishing and cleaning
1862014011076404/24/14Method to control amorphous oxide layer formation at interfaces of thin film stacks for memory and logic components
1872014011340304/24/14High efficiency cztse by a two-step approach
1882014011081304/24/14Absorbers for high efficiency thin-film pv
1892014011076404/24/14Method to control amorphous oxide layer formation at interfaces of thin film stacks for memory and logic components
1902014011340304/24/14High efficiency cztse by a two-step approach
1912014011081304/24/14Absorbers for high efficiency thin-film pv
1922014010328204/17/14Diffusion barrier layer for resistive random access memory cells
1932014010328404/17/14Reram cells including taxsiyn embedded resistors
1942014010248804/17/14Method and system for improving performance and preventing corrosion in multi-module cleaning chamber
1952014010656104/17/14Graphene barrier layers for interconnects and methods for forming the same
1962014010903004/17/14Method of determining electromigration (em) lifetimes and lifetime criteria
1972014010328204/17/14Diffusion barrier layer for resistive random access memory cells
1982014010328404/17/14Reram cells including taxsiyn embedded resistors
1992014010248804/17/14Method and system for improving performance and preventing corrosion in multi-module cleaning chamber
2002014010656104/17/14Graphene barrier layers for interconnects and methods for forming the same
2012014010903004/17/14Method of determining electromigration (em) lifetimes and lifetime criteria
2022014009978504/10/14Sacrificial low work function cap layer
2032014009978504/10/14Sacrificial low work function cap layer
2042014009978504/10/14Sacrificial low work function cap layer
2052014009059604/03/14Methods of combinatorial processing for screening multiple samples on a semiconductor substrate
2062014009066804/03/14In-situ cleaning assembly
2072014009246204/03/14Electrochromic device with improved transparent conductor and method for forming the same
2082014009403704/03/14Method and apparatus for preventing native oxide regrowth
2092014009059604/03/14Methods of combinatorial processing for screening multiple samples on a semiconductor substrate
2102014009066804/03/14In-situ cleaning assembly
2112014009246204/03/14Electrochromic device with improved transparent conductor and method for forming the same
2122014009403704/03/14Method and apparatus for preventing native oxide regrowth
2132014008423603/27/14Ald processing techniques for forming non-volatile resistive switching memories
2142014008494803/27/14Test vehicles for evaluating resistance of thin layers
2152014008749003/27/14Method and apparatus for improving particle performance
2162014008423603/27/14Ald processing techniques for forming non-volatile resistive switching memories
2172014008494803/27/14Test vehicles for evaluating resistance of thin layers
2182014008749003/27/14Method and apparatus for improving particle performance
2192014007714703/20/14Methods for selective etching of a multi-layer substrate
2202014007733603/20/14Leakage reduction in dram mim capacitors
2212014007733703/20/14High temperature ald process for metal oxide for dram applications
2222014007880803/20/14Embedded nonvolatile memory elements having resistive switching characteristics
2232014008023303/20/14Combinatorial optimization of interlayer parameters
2242014008025003/20/14Method of fabricating high efficiency cigs solar cells
2252014008028203/20/14Leakage reduction in dram mim capacitors
2262014008028403/20/14High temperature ald process of metal oxide for dram applications
2272014008032203/20/14Emissivity profile control for thermal uniformity
2282014007714703/20/14Methods for selective etching of a multi-layer substrate
2292014007733603/20/14Leakage reduction in dram mim capacitors
2302014007733703/20/14High temperature ald process for metal oxide for dram applications
2312014007880803/20/14Embedded nonvolatile memory elements having resistive switching characteristics
2322014008023303/20/14Combinatorial optimization of interlayer parameters
2332014008025003/20/14Method of fabricating high efficiency cigs solar cells
2342014008028203/20/14Leakage reduction in dram mim capacitors
2352014008028403/20/14High temperature ald process of metal oxide for dram applications
2362014008032203/20/14Emissivity profile control for thermal uniformity
2372014007310703/13/14Atomic layer deposition of metal oxide materials for memory applications
2382014007021303/13/14Methods for discretized processing and process sequence integration of regions of a substrate
2392014007143503/13/14High throughput quantum efficiency combinatorial characterization tool and method for combinatorial solar test substrates
2402014007310703/13/14Atomic layer deposition of metal oxide materials for memory applications
2412014007021303/13/14Methods for discretized processing and process sequence integration of regions of a substrate
2422014007143503/13/14High throughput quantum efficiency combinatorial characterization tool and method for combinatorial solar test substrates
2432014006578803/06/14Combinatorial approach for screening of ald film stacks
2442014006579903/06/14Methods and systems for low resistance contact formation
2452014006581903/06/14Methods and systems for low resistance contact formation
2462014006578803/06/14Combinatorial approach for screening of ald film stacks
2472014006579903/06/14Methods and systems for low resistance contact formation
2482014006581903/06/14Methods and systems for low resistance contact formation
2492014005737102/27/14High productivity combinatorial workflow for post gate etch clean development


ARCHIVE: New 2014 2013 2012 2011 2010 2009



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This listing is an abstract for educational and research purposes is only meant as a recent sample of applications filed, not a comprehensive history. Freshpatents.com is not affiliated or associated with Intermolecular, Inc. in any way and there may be associated servicemarks. This data is also published to the public by the USPTO and available for free on their website. Note that there may be alternative spellings for Intermolecular, Inc. with additional patents listed. Browse our Agent directory for other possible listings. Page by FreshPatents.com

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