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Intermolecular Inc patents


      
Recent patent applications related to Intermolecular Inc. Intermolecular Inc is listed as an Agent/Assignee. Note: Intermolecular Inc may have other listings under different names/spellings. We're not affiliated with Intermolecular Inc, we're just tracking patents.

ARCHIVE: New 2016 2015 2014 2013 2012 2011 2010 2009 | Company Directory "I" | Intermolecular Inc-related inventors




Search recent Press Releases: Intermolecular Inc-related press releases
Count Application # Date Intermolecular Inc patents (updated weekly) - BOOKMARK this page
12016004299102/11/16  new patent  Molecular self-assembly in substrate processing
22016003563102/04/16 Atomic layer deposition of hfalc as a metal gate workfunction material in mos devices
32016002800301/28/16 Shaping reram conductive filaments by controlling grain-boundary density
42016002800801/28/16 Reram cells with diffusion-resistant metal silicon oxide layers
52016002038801/21/16 Resistive switching by breaking and re-forming covalent bonds
62016002039201/21/16 Current-limiting electrodes
72016001336701/14/16 Oxides with thin metallic layers as transparent ohmic contacts for p-type and n-type gallium nitride
82015038030912/31/15 Metal-insulator-semiconductor (mis) contact with controlled defect density
92015036815212/24/15 Low-e panels and methods for forming the same
102015037187212/24/15 Solution based etching of titanium carbide and titanium nitride structures
112015036247312/17/15 Low-e panels utilizing high-entropy alloys and combinatorial methods and systems for developing the same
122015034500512/03/15 Seed layer for low-e applications
132015034883312/03/15 Method to etch cu/ta/tan selectively using dilute aqueous hf/hcl solution
142015033743211/26/15 Barrier layers for silver reflective coatings and hpc workflows for rapid screening of materials for such barrier layers
152015033836211/26/15 Combinatorial screening of metallic diffusion barriers
162015032578811/12/15 Embedded nonvolatile memory elements having resistive switching characteristics
172015032736611/12/15 Silver based conductive layer for flexible electronics
182015031844611/05/15 Low-temperature fabrication of transparent conductive contacts for p-gan and n-gan
192015031091010/29/15 Multi-level memory array having resistive elements for multi-bit data storage
202015031125710/29/15 Resistive random access memory cells having shared electrodes with transistor devices
212015031139710/29/15 Zinc stannate ohmic contacts for p-type gallium nitride
222015031304610/29/15 Superconducting circuits with reduced microwave absorption
232015030305710/22/15 Methods for fabricating integrated circuits including fluorine incorporation
242015029181210/15/15 Low emissivity glass incorporating phosphorescent rare earth compounds
252015029181210/15/15 Low emissivity glass incorporating phosphorescent rare earth compounds
262015028761610/08/15 Methods for discretized processing and process sequence integration of regions of a substrate
272015027967010/01/15 Novel method to grow in-situ crystalline igzo
282015027967410/01/15 Caac igzo deposited at room temperature
292015026266309/17/15 Methods of manufacturing embedded bipolar switching resistive memory
302015025534009/10/15 Method to etch cu/ta/tan selectively using dilute aqueous hf/hcl solution
312015025571609/10/15 Non-volatile resistive-switching memories
322015025533209/10/15 Ultra-low resistivity contacts
332015023237608/20/15 Low-e glazing performance by seed structure optimization
342015023237808/20/15 Low-e panels with ternary metal oxide dielectric layer and forming the same
352015023626008/20/15 Creating an embedded reram memory from a high-k metal gate transistor structure
362015023587508/20/15 Modular flow cell and adjustment system
372015022859508/13/15 Methods for etching copper during the fabrication of integrated circuits
382015022871008/13/15 Methods to improve electrical performance of zro2 based high-k dielectric materials for dram applications
392015020036107/16/15 Transition metal oxide bilayers
402015019181507/09/15 Titanium nickel niobium alloy barrier for low-emissivity coatings
412015019196507/09/15 Low-e panels and methods for forming the same
422015018428307/02/15 Ternary metal nitride formation by annealing constituent layers
432015018517007/02/15 X-ray fluorescence analysis of thin-film coverage defects
442015018757407/02/15 Igzo with intra-layer variations and methods for forming the same
452015018759607/02/15 Wet etching of silicon containing antireflective coatings
462015018766407/02/15 High productivity combinatorial testing of multiple work function materials on the same semiconductor substrate
472015018784107/02/15 Method of forming current-programmable inline resistor
482015018795607/02/15 Igzo devices with increased drive current and methods for forming the same
492015018795807/02/15 Igzo devices with reduced electrode contact resistivity and methods for forming the same
502015018803907/02/15 Embedded resistors with oxygen gettering layers
512015018804307/02/15 Embedded resistors for resistive random access memory cells
522015018804407/02/15 Embedded resistors for resistive random access memory cells
532015018804507/02/15 Stacked bi-layer as the low power switchable rram
542015018804607/02/15 Methods, systems, and improving thin film resistor reliability
552015018804807/02/15 Diffusion barrier layer for resistive random access memory cells
562015018849207/02/15 Voltage controlling assemblies including variable resistance devices
572015018428607/02/15 Hydrogenated amorphous silicon dielectric for superconducting devices
582015018428707/02/15 Systems and methods for parallel combinatorial vapor deposition processing
592015018429807/02/15 Methods and combinatorial pecvd or peald
602015018786507/02/15 Capacitors including inner and outer electrodes
612015018798207/02/15 Zinc blende cadmium-manganese-telluride with reduced hole compensation effects and methods for forming the same
622015017612206/25/15 Low-temperature growth of complex compound films
632015017758306/25/15 Systems, methods, and integrated glass units having adjustable solar heat gains
642015017931606/25/15 Methods of forming nitrides at low substrate temperatures
652015017943606/25/15 Plasma densification of dielectrics for improved dielectric loss tangent
662015017944206/25/15 Methods for forming crystalline igzo with a seed layer
672015017950806/25/15 Tantalum-based copper barriers and methods for forming the same
682015017983906/25/15 Contact layers for photovoltaic devices
692015017991406/25/15 Annealed dielectrics and heat-tolerant conductors for superconducting electronics
702015017991706/25/15 Atomic layer deposition of metal-oxide tunnel barriers using optimized oxidants
712015017991806/25/15 Plasma cleaning of superconducting layers
722015017993006/25/15 Schottky barriers for resistive random access memory cells
732015017993506/25/15 Atomic layer deposition of metal oxides for memory applications
742015017993706/25/15 Metal organic chemical vapor deposition of embedded resistors for reram cells
752015017611706/25/15 Interchangeable sputter gun head
762015017612406/25/15 Methods for rapid generation of ald saturation curves using segmented spatial ald
772015017731106/25/15 Methods and systems for evaluating igzo with respect to nbis
782015017758506/25/15 Systems, methods, and integrated glass units having adjustable transmissivities
792015017943806/25/15 Gate stacks and ohmic contacts for sic devices
802015017944406/25/15 Methods for forming crystalline igzo through power supply mode optimization
812015017944606/25/15 Methods for forming crystalline igzo through processing condition optimization
822015017944806/25/15 Methods for forming crystalline igzo through annealing
832015017948706/25/15 Multipurpose combinatorial vapor phase deposition chamber
842015017950006/25/15 Formation of a masking layer on a dielectric region to facilitate formation of a capping layer on electrically conductive regions separated by the dielectric region
852015017950906/25/15 Plasma treatment of low-k surface to improve barrier deposition
862015017968306/25/15 High productivity combinatorial material screening for metal oxide films
872015017968406/25/15 High productivity combinatorial material screening for stable, high-mobility non-silicon thin film transistors
882015017973006/25/15 Zro-based high k dielectric stack for logic decoupling capacitor or embedded dram
892015017974306/25/15 Graphene as a ge surface passivation layer to control metal-semiconductor junction resistivity
902015017977306/25/15 Igzo devices with reduced threshhold voltage shift and methods for forming the same
912015017981506/25/15 Quantum well igzo devices and methods for forming the same
922015017991306/25/15 Fluorine passivation of dielectric for superconducting electronics
932015017991506/25/15 Fluorine passivation during deposition of dielectrics for superconducting electronics
942015017991606/25/15 Catalytic growth of josephson junction tunnel barrier
952015017993306/25/15 Tiox based selector element
962015017993406/25/15 Zrox/sto/zrox based selector element
972015016679506/18/15 Anti-glare coatings with ultraviolet-absorbing particles and methods for forming the same
982015017076006/18/15 Resistive switching sample and hold
992015017090806/18/15 One-way valves for controlling flow into deposition chamber
1002015017126006/18/15 Low resistivity nitrogen-doped zinc telluride and methods for forming the same
1012015017132306/18/15 Resistive random access memory cell having three or more resistive states
1022015017083706/18/15 Dielectric k value tuning of hah stack for improved tddb performance of logic decoupling capacitor or embedded dram
1032015017091206/18/15 Systems and methods for forming semiconductor devices
1042015017092306/18/15 Feature size reduction in semiconductor devices by selective wet etching
1052015017109506/18/15 Memory arrays for both good data retention and low power operation
1062015017122706/18/15 Igzo devices with composite channel layers and methods for forming the same
1072015015876206/11/15 Simplified protection layer for abrasion resistant glass coatings and methods for forming the same
1082015016252706/11/15 Morphology control of ultra-thin meox layer
1092015016253006/11/15 Nonvolatile memory device having a current limiting element
1102015016211106/11/15 Transparent conductive films and methods for forming the same
1112015015548506/04/15 Nonvolatile resistive memory element with an oxygen-gettering layer
1122015015536806/04/15 Amorphous silicon thin-film transistors with reduced electrode contact resistivity and methods for forming the same
1132015015548606/04/15 Resistive-switching memory elements having improved switching characteristics
1142015014634105/28/15 Ald dielectric films with leakage-reducing impurity layers
1152015014406105/28/15 Combinatorial plasma enhanced deposition techniques
1162015014786505/28/15 Resistive-switching memory elements having improved switching characteristics
1172015014786605/28/15 Resistive-switching memory element
1182015013706205/21/15 Mimcaps with quantum wells as selector elements for crossbar memory arrays
1192015013706405/21/15 Reduction of forming voltage in semiconductor devices
1202015014077205/21/15 Method for fabricating a bipolar transistor having self-aligned emitter contact
1212015014083405/21/15 Al2o3 surface nucleation preparation with remote oxygen plasma
1222015014083805/21/15 Two step deposition of high-k gate dielectric materials
1232015013731505/21/15 Dram mim capacitor using non-noble electrodes
1242015014069605/21/15 Combinatorial solid source doping process development
1252015014077905/21/15 Selector device using low leakage dielectric mimcap diode
1262015014083605/21/15 Methods to control sio2 etching during fluorine doping of si/sio2 interface
1272015012982605/14/15 Flexible non-volatile memory
1282015013006505/14/15 Method to etch cu/ta/tan selectively using dilute aqueous hf/h2so4 solution
1292015013295305/14/15 Etching of semiconductor structures that include titanium-based layers
1302015013293805/14/15 Methods and systems for forming reliable gate stack on semiconductors
1312015012307105/07/15 Method for forming metal oxides and silicides in a memory device
1322015011882804/30/15 Reduction of native oxides by annealing in reducing gas or plasma
1332015010456904/16/15 Barrier layers for silver reflective coatings and hpc workflows for rapid screening of materials for such barrier layers
1342015010530804/16/15 Aqua regia and hydrogen peroxide hcl combination to remove ni and nipt residues
1352015010168304/16/15 Touchless site isolation using gas bearing
1362015010436004/16/15 Combinatorial flow system and method
1372015009715304/09/15 Non-volatile resistive-switching memories
1382015009110504/02/15 Continuous tuning of erbium silicide metal gate effective work function via a pvd nanolaminate approach for mosfet applications
1392015009387604/02/15 Doped oxide dielectrics for resistive random access memory cells
1402015009103204/02/15 Nickel-titanium and related alloys as silver diffusion barriers
1412015009350004/02/15 Corrosion-resistant silver coatings with improved adhesion to iii-v materials
1422015009389804/02/15 Combinatorial process system
1432015008713003/26/15 Dram mim capacitor using non-noble electrodes
1442015007972703/19/15 Amorphous igzo devices and methods for forming the same
1452015006931903/12/15 Method of forming anneal-resistant embedded resistor for non-volatile memory application
1462015006075303/05/15 Controlling composition of multiple oxides in resistive switching layers using atomic layer deposition
1472015006091003/05/15 Conductive transparent reflector
1482015006436103/05/15 Uv treatment for ald film densification
1492015006487303/05/15 Controlling reram forming voltage with doping
1502015005391002/26/15 Multistate nonvolatile memory elements
1512015005674802/26/15 Methods for forming resistive switching memory elements by heating deposited layers
1522015005674902/26/15 Atomic layer deposition of metal oxide materials for memory applications
1532015005672302/26/15 Processing substrates using site-isolated processing
1542015005678002/26/15 Full wafer processing by multiple passes through a combinatorial reactor
1552015004191202/12/15 Gate stacks including taxsiyo for mosfets
1562015003489602/05/15 Resistive-switching nonvolatile memory elements
1572015003489802/05/15 Confined defect profiling within resistive random memory access cells
1582015003508502/05/15 Doped high-k dielectrics and methods for forming the same
1592015003795902/05/15 Bipolar multistate nonvolatile memory
1602015003114801/29/15 Shadow mask for patterned deposition on substrates
1612015002177201/22/15 Mixed-metal barrier films optimized by high-productivity combinatorial pvd
1622015002418201/22/15 Antireflective coatings with self-cleaning, moisture resistance and antimicrobial properties
1632015002177401/22/15 Molecular self-assembly in substrate processing
1642015002567001/22/15 Substrate processing including correction for deposition location
1652015001617801/15/15 All around electrode for novel 3d rram applications
1662015001745601/15/15 Reducing voids caused by trapped acid on a dielectric surface
1672015001778001/15/15 Nonvolatile resistive memory element with an integrated oxygen isolation structure
1682015001781501/15/15 Combinatorial non-contact wet processing
1692015000838601/08/15 Morphology control of ultra-thin meox layer
1702015001070501/08/15 Methods for forming templated materials
1712015000155501/01/15 Methods for coating a substrate with an amphiphilic compound
1722015000167601/01/15 Method of forming an asymmetric mimcap or a schottky device as a selector element for a cross-bar memory array
1732014037424012/25/14 Multifunctional electrode
1742014037793112/25/14 Metal aluminum nitride embedded resistors for resistive random memory access cells
1752014037064612/18/14 Absorber layer for a thin film photovoltaic device with a double-graded band gap
1762014032250710/30/14 Systems, methods, and production coatings of low-emissivity glass
1772014032288410/30/14 Nonvolatile resistive memory element with a silicon-based switching layer
1782014031533110/23/14 Screening of surface passivation processes for germanium channels
1792014030852810/16/14 Systems, methods, and production coatings of low-emissivity glass
1802014030267110/09/14 Selective etching of copper and copper-barrier materials by an aqueous base solution with fluoride addition
1812014026166009/18/14 Tcos for heterojunction solar cells
1822014026415509/18/14 High-selectivity wet patterning of source-drain electrodes over taos for a bce device structure
1832014026423909/18/14 Using multi-layer mimcaps in the tunneling regime as selector element for a cross-bar memory array
1842014026830109/18/14 Low-emissivity panels including magnetic layers
1852014026831609/18/14 Systems, methods, and production coatings of low-emissivity glass including a ternary alloy
1862014026831709/18/14 High solar gain low-e panel and forming the same
1872014026834809/18/14 Anti-reflective coatings with porosity gradient and methods for forming the same
1882014026834909/18/14 Optical coatings with plate-shaped particles and methods for forming the same
1892014026899309/18/14 Nonvolatile resistive memory element with an oxygen-gettering layer
1902014027212709/18/14 Anti-glare coatings with sacrificial surface roughening agents and methods for forming the same
1912014027229009/18/14 Polymer anti-glare coatings and methods for forming the same
1922014027233509/18/14 Low-e glazing performance by seed structure optimization
1932014027235309/18/14 Color shift of high lsg low emissivity coating after heat treatment
1942014027235409/18/14 Method to generate high lsg low-emissivity coating with same color after heat treatment
1952014027238409/18/14 Anti-reflection coatings with aqueous particle dispersions and methods for forming the same
1962014027238709/18/14 Anti-glare coatings with aqueous particle dispersions and methods for forming the same
1972014027239009/18/14 Low-e panel with improved barrier layer process window and forming the same
1982014027239509/18/14 Low-emissivity glass including spacer layers compatible with heat treatment
1992014027245409/18/14 Barrier layers for silver reflective coatings and hpc workflows for rapid screening of materials for such barrier layers
2002014027245509/18/14 Titanium nickel niobium alloy barrier for low-emissivity coatings
2012014027333309/18/14 Methods for fabricating znose alloys
2022014027346709/18/14 Polycrystalline-silicon etch with low-peroxide apm
2032014027349709/18/14 Wet processing systems and methods with replenishment
2042014026202809/18/14 Non-contact wet-process cell confining liquid to a region of a solid surface by differential pressure
2052014026274909/18/14 Methods of plasma surface treatment in a pvd chamber
2062014026422409/18/14 Performance enhancement of forming-free reram devices using 3d nanoparticles
2072014026424109/18/14 Znte on tin or pt electrodes as a resistive switching element for reram applications
2082014026425209/18/14 Current selector for non-volatile memory in a cross bar array based on defect and band engineering metal-dielectric-metal stacks
2092014026428109/18/14 Channel-last methods for making fets
2102014026432009/18/14 Compositional graded igzo thin film transistor
2112014026432109/18/14 Method of fabricating igzo by sputtering in oxidizing gas
2122014026449209/18/14 Counter-doped low-power finfet
2132014026450709/18/14 Fluorine passivation in cmos image sensors
2142014026463409/18/14 Finfet for rf and analog integrated circuits
2152014026470809/18/14 Optical absorbers
2162014026474709/18/14 Deposition of anisotropic dielectric layers orientationally matched to the physically separated substrate
2172014026482509/18/14 Ultra-low resistivity contacts
2182014026487109/18/14 Method to increase interconnect reliability
2192014026837709/18/14 Ultrathin coating for one way mirror applications
2202014026900409/18/14 Method for improving data retention of reram chips operating at low operating temperatures
2212014027211209/18/14 Combinatorial methods and systems for developing electrochromic materials and devices
2222014027330009/18/14 Method for forming reram chips operating at low operating temperatures
2232014027330909/18/14 Controlling radical lifetimes in a remote plasma chamber
2242014027331109/18/14 Optical absorbers
2252014027331409/18/14 High productivity combinatorial workflow to screen and design chalcogenide materials as non volatile memory current selector
2262014027334009/18/14 High productivity combinatorial screening for stable metal oxide tfts
2272014027334109/18/14 Methods for forming back-channel-etch devices with copper-based electrodes
2282014027340409/18/14 Advanced targeted microwave degas system
2292014027342709/18/14 Electrode for low-leakage devices
2302014027349309/18/14 Hydrogen plasma cleaning of germanium oxide surfaces
2312014027352509/18/14 Atomic layer deposition of reduced-leakage post-transition metal oxide films
2322014025611109/11/14 Nonvolatile memory elements
2332014025256509/11/14 Nucleation interface for high-k layer on germanium
2342014024664009/04/14 Doped electrodes used to inhibit oxygen loss in reram device
2352014024764909/04/14 Bipolar resistive-switching memory with a single diode per memory cell
2362014023174408/21/14 Methods for forming resistive switching memory elements
2372014023095508/21/14 Systems for discretized processing of regions of a substrate
2382014023170408/21/14 Silicon texturing formulations
2392014022505608/14/14 Resistive-switching memory elements having improved switching characteristics
2402014022787108/14/14 Formation of a masking layer on a dielectric region to facilitate formation of a capping layer on electrically conductive regions separated by the dielectric region
2412014022788008/14/14 Combinatorial plasma enhanced deposition and etchtechniques
2422014019126207/10/14 Material with tunable index of refraction
2432014019136507/10/14 Device design for partially oriented rutile dielectrics
2442014018267007/03/14 Light trapping and antireflective coatings
2452014018369607/03/14 Methods to improve leakage for zro2 based high k mim capacitor
2462014018503407/03/14 Method to extend single wavelength ellipsometer to obtain spectra of refractive index
2472014018659807/03/14 Base-layer consisting of two materials layer with extreme high/low index in low-e coating to improve the neutral color and transmittance performance
2482014018699507/03/14 Method of fabricating cigs solar cells with high band gap by sequential processing
2492014018704107/03/14 High dose ion-implanted photoresist removal using organic solvent and transition metal mixtures



ARCHIVE: New 2016 2015 2014 2013 2012 2011 2010 2009



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