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Intermolecular Inc
Intermolecular Inc_20131212

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Intermolecular Inc patents


      
Recent patent applications related to Intermolecular Inc. Intermolecular Inc is listed as an Agent/Assignee. Note: Intermolecular Inc may have other listings under different names/spellings. We're not affiliated with Intermolecular Inc, we're just tracking patents.

ARCHIVE: New 2015 2014 2013 2012 2011 2010 2009 | Company Directory "I" | Intermolecular Inc-related inventors


Method for fabricating a bipolar transistor having self-aligned emitter contact

Intermolecular

Method for fabricating a bipolar transistor having self-aligned emitter contact

Two step deposition of high-k gate dielectric materials

Intermolecular

Two step deposition of high-k gate dielectric materials

Methods to control sio2 etching during fluorine doping of si/sio2 interface

Intermolecular

Methods to control sio2 etching during fluorine doping of si/sio2 interface

Search recent Press Releases: Intermolecular Inc-related press releases
Count Application # Date Intermolecular Inc patents (updated weekly) - BOOKMARK this page
12015013706205/21/15 new patent  Mimcaps with quantum wells as selector elements for crossbar memory arrays
22015013706405/21/15 new patent  Reduction of forming voltage in semiconductor devices
32015014077205/21/15 new patent  Method for fabricating a bipolar transistor having self-aligned emitter contact
42015014083405/21/15 new patent  Al2o3 surface nucleation preparation with remote oxygen plasma
52015014083805/21/15 new patent  Two step deposition of high-k gate dielectric materials
62015013731505/21/15 new patent  Dram mim capacitor using non-noble electrodes
72015014069605/21/15 new patent  Combinatorial solid source doping process development
82015014077905/21/15 new patent  Selector device using low leakage dielectric mimcap diode
92015014083605/21/15 new patent  Methods to control sio2 etching during fluorine doping of si/sio2 interface
102015012982605/14/15Flexible non-volatile memory
112015013006505/14/15Method to etch cu/ta/tan selectively using dilute aqueous hf/h2so4 solution
122015013295305/14/15Etching of semiconductor structures that include titanium-based layers
132015013293805/14/15Methods and systems for forming reliable gate stack on semiconductors
142015012307105/07/15Method for forming metal oxides and silicides in a memory device
152015011882804/30/15Reduction of native oxides by annealing in reducing gas or plasma
162015010456904/16/15Barrier layers for silver reflective coatings and hpc workflows for rapid screening of materials for such barrier layers
172015010530804/16/15Aqua regia and hydrogen peroxide hcl combination to remove ni and nipt residues
182015010168304/16/15Touchless site isolation using gas bearing
192015010436004/16/15Combinatorial flow system and method
202015009715304/09/15Non-volatile resistive-switching memories
212015009110504/02/15Continuous tuning of erbium silicide metal gate effective work function via a pvd nanolaminate approach for mosfet applications
222015009387604/02/15Doped oxide dielectrics for resistive random access memory cells
232015009103204/02/15Nickel-titanium and related alloys as silver diffusion barriers
242015009350004/02/15Corrosion-resistant silver coatings with improved adhesion to iii-v materials
252015009389804/02/15Combinatorial process system
262015008713003/26/15Dram mim capacitor using non-noble electrodes
272015007972703/19/15Amorphous igzo devices and methods for forming the same
282015006931903/12/15Method of forming anneal-resistant embedded resistor for non-volatile memory application
292015006075303/05/15Controlling composition of multiple oxides in resistive switching layers using atomic layer deposition
302015006091003/05/15Conductive transparent reflector
312015006436103/05/15Uv treatment for ald film densification
322015006487303/05/15Controlling reram forming voltage with doping
332015005391002/26/15Multistate nonvolatile memory elements
342015005674802/26/15Methods for forming resistive switching memory elements by heating deposited layers
352015005674902/26/15Atomic layer deposition of metal oxide materials for memory applications
362015005672302/26/15Processing substrates using site-isolated processing
372015005678002/26/15Full wafer processing by multiple passes through a combinatorial reactor
382015004191202/12/15Gate stacks including taxsiyo for mosfets
392015003489602/05/15Resistive-switching nonvolatile memory elements
402015003489802/05/15Confined defect profiling within resistive random memory access cells
412015003508502/05/15Doped high-k dielectrics and methods for forming the same
422015003795902/05/15Bipolar multistate nonvolatile memory
432015003114801/29/15Shadow mask for patterned deposition on substrates
442015002177201/22/15Mixed-metal barrier films optimized by high-productivity combinatorial pvd
452015002418201/22/15Antireflective coatings with self-cleaning, moisture resistance and antimicrobial properties
462015002177401/22/15Molecular self-assembly in substrate processing
472015002567001/22/15Substrate processing including correction for deposition location
482015001617801/15/15All around electrode for novel 3d rram applications
492015001745601/15/15Reducing voids caused by trapped acid on a dielectric surface
502015001778001/15/15Nonvolatile resistive memory element with an integrated oxygen isolation structure
512015001781501/15/15Combinatorial non-contact wet processing
522015000838601/08/15Morphology control of ultra-thin meox layer
532015001070501/08/15Methods for forming templated materials
542015000155501/01/15Methods for coating a substrate with an amphiphilic compound
552015000167601/01/15Method of forming an asymmetric mimcap or a schottky device as a selector element for a cross-bar memory array
562014037424012/25/14Multifunctional electrode
572014037793112/25/14Metal aluminum nitride embedded resistors for resistive random memory access cells
582014037064612/18/14Absorber layer for a thin film photovoltaic device with a double-graded band gap
592014032250710/30/14Systems, methods, and production coatings of low-emissivity glass
602014032288410/30/14Nonvolatile resistive memory element with a silicon-based switching layer
612014031533110/23/14Screening of surface passivation processes for germanium channels
622014030852810/16/14Systems, methods, and production coatings of low-emissivity glass
632014030267110/09/14Selective etching of copper and copper-barrier materials by an aqueous base solution with fluoride addition
642014026166009/18/14Tcos for heterojunction solar cells
652014026415509/18/14High-selectivity wet patterning of source-drain electrodes over taos for a bce device structure
662014026423909/18/14Using multi-layer mimcaps in the tunneling regime as selector element for a cross-bar memory array
672014026830109/18/14Low-emissivity panels including magnetic layers
682014026831609/18/14Systems, methods, and production coatings of low-emissivity glass including a ternary alloy
692014026831709/18/14High solar gain low-e panel and forming the same
702014026834809/18/14Anti-reflective coatings with porosity gradient and methods for forming the same
712014026834909/18/14Optical coatings with plate-shaped particles and methods for forming the same
722014026899309/18/14Nonvolatile resistive memory element with an oxygen-gettering layer
732014027212709/18/14Anti-glare coatings with sacrificial surface roughening agents and methods for forming the same
742014027229009/18/14Polymer anti-glare coatings and methods for forming the same
752014027233509/18/14Low-e glazing performance by seed structure optimization
762014027235309/18/14Color shift of high lsg low emissivity coating after heat treatment
772014027235409/18/14Method to generate high lsg low-emissivity coating with same color after heat treatment
782014027238409/18/14Anti-reflection coatings with aqueous particle dispersions and methods for forming the same
792014027238709/18/14Anti-glare coatings with aqueous particle dispersions and methods for forming the same
802014027239009/18/14Low-e panel with improved barrier layer process window and forming the same
812014027239509/18/14Low-emissivity glass including spacer layers compatible with heat treatment
822014027245409/18/14Barrier layers for silver reflective coatings and hpc workflows for rapid screening of materials for such barrier layers
832014027245509/18/14Titanium nickel niobium alloy barrier for low-emissivity coatings
842014027333309/18/14Methods for fabricating znose alloys
852014027346709/18/14Polycrystalline-silicon etch with low-peroxide apm
862014027349709/18/14Wet processing systems and methods with replenishment
872014026202809/18/14Non-contact wet-process cell confining liquid to a region of a solid surface by differential pressure
882014026274909/18/14Methods of plasma surface treatment in a pvd chamber
892014026422409/18/14Performance enhancement of forming-free reram devices using 3d nanoparticles
902014026424109/18/14Znte on tin or pt electrodes as a resistive switching element for reram applications
912014026425209/18/14Current selector for non-volatile memory in a cross bar array based on defect and band engineering metal-dielectric-metal stacks
922014026428109/18/14Channel-last methods for making fets
932014026432009/18/14Compositional graded igzo thin film transistor
942014026432109/18/14Method of fabricating igzo by sputtering in oxidizing gas
952014026449209/18/14Counter-doped low-power finfet
962014026450709/18/14Fluorine passivation in cmos image sensors
972014026463409/18/14Finfet for rf and analog integrated circuits
982014026470809/18/14Optical absorbers
992014026474709/18/14Deposition of anisotropic dielectric layers orientationally matched to the physically separated substrate
1002014026482509/18/14Ultra-low resistivity contacts
1012014026487109/18/14Method to increase interconnect reliability
1022014026837709/18/14Ultrathin coating for one way mirror applications
1032014026900409/18/14Method for improving data retention of reram chips operating at low operating temperatures
1042014027211209/18/14Combinatorial methods and systems for developing electrochromic materials and devices
1052014027330009/18/14Method for forming reram chips operating at low operating temperatures
1062014027330909/18/14Controlling radical lifetimes in a remote plasma chamber
1072014027331109/18/14Optical absorbers
1082014027331409/18/14High productivity combinatorial workflow to screen and design chalcogenide materials as non volatile memory current selector
1092014027334009/18/14High productivity combinatorial screening for stable metal oxide tfts
1102014027334109/18/14Methods for forming back-channel-etch devices with copper-based electrodes
1112014027340409/18/14Advanced targeted microwave degas system
1122014027342709/18/14Electrode for low-leakage devices
1132014027349309/18/14Hydrogen plasma cleaning of germanium oxide surfaces
1142014027352509/18/14Atomic layer deposition of reduced-leakage post-transition metal oxide films
1152014025611109/11/14Nonvolatile memory elements
1162014025256509/11/14Nucleation interface for high-k layer on germanium
1172014024664009/04/14Doped electrodes used to inhibit oxygen loss in reram device
1182014024764909/04/14Bipolar resistive-switching memory with a single diode per memory cell
1192014023174408/21/14Methods for forming resistive switching memory elements
1202014023095508/21/14Systems for discretized processing of regions of a substrate
1212014023170408/21/14Silicon texturing formulations
1222014022505608/14/14Resistive-switching memory elements having improved switching characteristics
1232014022787108/14/14Formation of a masking layer on a dielectric region to facilitate formation of a capping layer on electrically conductive regions separated by the dielectric region
1242014022788008/14/14Combinatorial plasma enhanced deposition and etchtechniques
1252014019126207/10/14Material with tunable index of refraction
1262014019136507/10/14Device design for partially oriented rutile dielectrics
1272014018267007/03/14Light trapping and antireflective coatings
1282014018369607/03/14Methods to improve leakage for zro2 based high k mim capacitor
1292014018503407/03/14Method to extend single wavelength ellipsometer to obtain spectra of refractive index
1302014018659807/03/14Base-layer consisting of two materials layer with extreme high/low index in low-e coating to improve the neutral color and transmittance performance
1312014018699507/03/14Method of fabricating cigs solar cells with high band gap by sequential processing
1322014018704107/03/14High dose ion-implanted photoresist removal using organic solvent and transition metal mixtures
1332014018705107/03/14Poly removal for replacement gate with an apm mixture
1342014018705207/03/14Selective etching of hafnium oxide using diluted hydrofluoric acid
1352014018266507/03/14Optical absorbers
1362014018303607/03/14In situ sputtering target measurement
1372014018316107/03/14Methods and systems for site-isolated combinatorial substrate processing using a mask
1382014018343207/03/14Moox-based resistance switching materials
1392014018343907/03/14Current selector for non-volatile memory in a cross bar array based on defect and band engineering metal-dielectric-metal stacks
1402014018366407/03/14Fullerene-based capacitor electrode
1412014018366607/03/14Flourine-stabilized interface
1422014018369507/03/14Methods for reproducible flash layer deposition
1432014018369707/03/14High work function, manufacturable top electrode
1442014018373707/03/14Diffusion barriers
1452014018535707/03/14Barrier design for steering elements
1462014018661707/03/14Low-emissivity coatings
1472014018701507/03/14Methods to improve leakage for zro2 based high k mim capacitor
1482014018701607/03/14High work function, manufacturable top electrode
1492014018701807/03/14Methods for reproducible flash layer deposition
1502014018826407/03/14Workflow manager and bar coding system for processing of samples/substrates in hpc (high productivity combinatorial) r&d environment
1512014017535906/26/14Diffusion barrier layer for resistive random access memory cells
1522014017561806/26/14Transition metal aluminate and high k dielectric semiconductor stack
1532014017704206/26/14Novel silver barrier materials for low-emissivity applications
1542014017865706/26/14Antireflection coatings
1552014017908206/26/14Selective etching of hafnium oxide using non-aqueous solutions
1562014017910706/26/14Etching silicon nitride using dilute hydrofluoric acid
1572014017911206/26/14High productivity combinatorial techniques for titanium nitride etching
1582014017448106/26/14Processing and cleaning substrates
1592014017454006/26/14Ald process window combinatorial screening tool
1602014017465606/26/14Method to improve the operational robustness and safety of combinatorial processing systems
1612014017490706/26/14High deposition rate chamber with co-sputtering capabilities
1622014017491006/26/14Sputter gun shield
1632014017491106/26/14Methods and systems for reducing particles during physical vapor deposition
1642014017491806/26/14Sputter gun
1652014017492106/26/14Multi-piece target and magnetron to prevent sputtering of target backing materials
1662014017542206/26/14Deposition of rutile films with very high dielectric constant
1672014017556706/26/14Method of depositing films with narrow-band conductive properties
1682014017560306/26/14Method of forming an asymmetric mimcap or a schottky device as a selector element for a cross-bar memory array
1692014017560406/26/14Two step deposition of molybdenum dioxide electrode for high quality dielectric stacks
1702014017737806/26/14High dilution ratio by successively preparing and diluting chemicals
1712014017857806/26/14Barrier layers for silver reflective coatings and hpc workflows for rapid screening of materials for such barrier layers
1722014017858306/26/14Combinatorial methods and systems for developing thermochromic materials and devices
1732014017903006/26/14Dissolution rate monitor
1742014017903306/26/14Methods for forming templated materials
1752014017909506/26/14Methods and systems for controlling gate dielectric interfaces of mosfets
1762014017910006/26/14Method to control depth profiles of dopants using a remote plasma source
1772014017911306/26/14Surface treatment methods and systems for substrate processing
1782014017912306/26/14Site-isolated rapid thermal processing methods and apparatus
1792014016647206/19/14Method and temperature control to improve low emissivity coatings
1802014016875906/19/14Methods and apparatuses for patterned low emissivity panels
1812014017030806/19/14Antireflective coatings with gradation and methods for forming the same
1822014017033806/19/14Pvd chamber and process for over-coating layer to improve emissivity for low emissivity coating
1832014017041306/19/14Silver based conductive layer for flexible electronics
1842014017042106/19/14Low-e panel with improved barrier layer and forming the same
1852014017042206/19/14Low emissivity coating with optimal base layer material and layer stack
1862014017043406/19/14Two layer ag process for low emissivity coatings
1872014016605006/19/14Chuck for mounting a semiconductor wafer for liquid immersion processing
1882014016610706/19/14Back-contact electron reflectors enhancing thin film solar cell efficiency
1892014016613406/19/14Pump with reduced number of moving parts
1902014016661606/19/14Combinatorial processing using a remote plasma source
1912014016684006/19/14Substrate carrier
1922014016695806/19/14Controlling reram forming voltage with doping
1932014016722106/19/14Methods to improve leakage of high k materials
1942014016722306/19/14Semiconductor cooling device
1952014016906206/19/14Methods of manufacturing embedded bipolar switching resistive memory
1962014017004906/19/14Low refractive index material by sputtering deposition method
1972014017033506/19/14Methods and combinatorial pecvd or peald
1982014017077506/19/14Hpc workflow for rapid screening of materials and stacks for stt-ram
1992014017080206/19/14Absorber layer for a thin film photovoltaic device with a double-graded band gap
2002014017080306/19/14Cigs absorber formed by co-sputtered indium
2012014017080606/19/14Tcos for high-efficiency crystalline si heterojunction solar cells
2022014017083306/19/14Methods to improve leakage of high k materials
2032014017085706/19/14Customizing etch selectivity with sequential multi-stage etches with complementary etchants
2042014016238406/12/14Pvd-ald-cvd hybrid hpc for work function material screening
2052014015819006/12/14Absorbers for high efficiency thin-film pv
2062014015912006/12/14Conformal doping
2072014016198906/12/14Anti-glare using a two-step texturing process
2082014016199006/12/14Anti-glare glass/substrate via novel specific combinations of dry and wet processes
2092014016239706/12/14High-efficiency thin-film photovoltaics with controlled homogeneity and defects
2102014015162606/05/14Selector device using low leakage dielectric mimcap diode
2112014015485906/05/14Methods and vehicles for high productivity combinatorial testing of materials for resistive random access memory cells
2122014015024506/05/14Pneumatic clamping mechanism for cells with adjustable height
2132014014759405/29/14Magnesium fluoride and magnesium oxyfluoride based anti-reflection coatings via chemical solution deposition processes
2142014014447105/29/14Contamination control, rinsing, and purging methods to extend the life of components within combinatorial processing systems
2152014014451205/29/14Methods and systems for dispensing different liquids for high productivity combinatorial processing
2162014014477105/29/14Cooling efficiency fluid cooled sputter guns
2172014014735005/29/14Cleaner for reactor component cleaning
2182014014758705/29/14Combinatorial spin deposition
2192014014759305/29/14Liquid cooled sputter apertured shields
2202014014153405/22/14Dielectric doping using high productivity combinatorial methods
2212014013860205/22/14Controlled localized defect paths for resistive memories
2222014013484905/15/14Combinatorial site isolated plasma assisted deposition
2232014013092205/15/14Control methods and hardware configurations for ozone delivery systems
2242014013326505/15/14Contactless magnetically driven agitation systems
2252014012403805/08/14Reactor cell isolation using differential pressure in a combinatorial reactor
2262014012435905/08/14New magnet design which improves erosion profile for pvd systems
2272014012472505/08/14Resistive random access memory cells having doped current limiting layers
2282014012478805/08/14Chemical vapor deposition system
2292014012481705/08/14Contact layers
2302014012742205/08/14Method and high-k gate performance improvement and combinatorial processing
2312014012788705/08/14Chemical vapor deposition system
2322014012797405/08/14Combinatorial tool for mechanically-assisted surface polishing and cleaning
2332014011076404/24/14Method to control amorphous oxide layer formation at interfaces of thin film stacks for memory and logic components
2342014011340304/24/14High efficiency cztse by a two-step approach
2352014011081304/24/14Absorbers for high efficiency thin-film pv
2362014010328204/17/14Diffusion barrier layer for resistive random access memory cells
2372014010328404/17/14Reram cells including taxsiyn embedded resistors
2382014010248804/17/14Method and system for improving performance and preventing corrosion in multi-module cleaning chamber
2392014010656104/17/14Graphene barrier layers for interconnects and methods for forming the same
2402014010903004/17/14Method of determining electromigration (em) lifetimes and lifetime criteria
2412014009978504/10/14Sacrificial low work function cap layer
2422014009059604/03/14Methods of combinatorial processing for screening multiple samples on a semiconductor substrate
2432014009066804/03/14In-situ cleaning assembly
2442014009246204/03/14Electrochromic device with improved transparent conductor and forming the same
2452014009403704/03/14Method and preventing native oxide regrowth
2462014008423603/27/14Ald processing techniques for forming non-volatile resistive switching memories
2472014008494803/27/14Test vehicles for evaluating resistance of thin layers
2482014008749003/27/14Method and improving particle performance
2492014007714703/20/14Methods for selective etching of a multi-layer substrate



ARCHIVE: New 2015 2014 2013 2012 2011 2010 2009



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