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Intermolecular Inc
Intermolecular Inc_20131212

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Intermolecular Inc patents


      
Recent patent applications related to Intermolecular Inc. Intermolecular Inc is listed as an Agent/Assignee. Note: Intermolecular Inc may have other listings under different names/spellings. We're not affiliated with Intermolecular Inc, we're just tracking patents.

ARCHIVE: New 2015 2014 2013 2012 2011 2010 2009 | Company Directory "I" | Intermolecular Inc-related inventors


Amorphous igzo devices and methods for forming the same

Intermolecular

Amorphous igzo devices and methods for forming the same

Method of forming anneal-resistant embedded resistor for non-volatile memory application

Intermolecular

Method of forming anneal-resistant embedded resistor for non-volatile memory application

Controlling composition of multiple oxides in resistive switching layers using atomic layer deposition

Intermolecular

Controlling composition of multiple oxides in resistive switching layers using atomic layer deposition

Search recent Press Releases: Intermolecular Inc-related press releases
Count Application # Date Intermolecular Inc patents (updated weekly) - BOOKMARK this page
12015008713003/26/15 new patent  Dram mim capacitor using non-noble electrodes
22015007972703/19/15Amorphous igzo devices and methods for forming the same
32015006931903/12/15Method of forming anneal-resistant embedded resistor for non-volatile memory application
42015006075303/05/15Controlling composition of multiple oxides in resistive switching layers using atomic layer deposition
52015006091003/05/15Conductive transparent reflector
62015006436103/05/15Uv treatment for ald film densification
72015006487303/05/15Controlling reram forming voltage with doping
82015005391002/26/15Multistate nonvolatile memory elements
92015005674802/26/15Methods for forming resistive switching memory elements by heating deposited layers
102015005674902/26/15Atomic layer deposition of metal oxide materials for memory applications
112015005672302/26/15Processing substrates using site-isolated processing
122015005678002/26/15Full wafer processing by multiple passes through a combinatorial reactor
132015004191202/12/15Gate stacks including taxsiyo for mosfets
142015003489602/05/15Resistive-switching nonvolatile memory elements
152015003489802/05/15Confined defect profiling within resistive random memory access cells
162015003508502/05/15Doped high-k dielectrics and methods for forming the same
172015003795902/05/15Bipolar multistate nonvolatile memory
182015003114801/29/15Shadow mask for patterned deposition on substrates
192015002177201/22/15Mixed-metal barrier films optimized by high-productivity combinatorial pvd
202015002418201/22/15Antireflective coatings with self-cleaning, moisture resistance and antimicrobial properties
212015002177401/22/15Molecular self-assembly in substrate processing
222015002567001/22/15Substrate processing including correction for deposition location
232015001617801/15/15All around electrode for novel 3d rram applications
242015001745601/15/15Reducing voids caused by trapped acid on a dielectric surface
252015001778001/15/15Nonvolatile resistive memory element with an integrated oxygen isolation structure
262015001781501/15/15Combinatorial non-contact wet processing
272015000838601/08/15Morphology control of ultra-thin meox layer
282015001070501/08/15Methods for forming templated materials
292015000155501/01/15Methods for coating a substrate with an amphiphilic compound
302015000167601/01/15Method of forming an asymmetric mimcap or a schottky device as a selector element for a cross-bar memory array
312014037424012/25/14Multifunctional electrode
322014037793112/25/14Metal aluminum nitride embedded resistors for resistive random memory access cells
332014037064612/18/14Absorber layer for a thin film photovoltaic device with a double-graded band gap
342014032250710/30/14Systems, methods, and production coatings of low-emissivity glass
352014032288410/30/14Nonvolatile resistive memory element with a silicon-based switching layer
362014031533110/23/14Screening of surface passivation processes for germanium channels
372014030852810/16/14Systems, methods, and production coatings of low-emissivity glass
382014030267110/09/14Selective etching of copper and copper-barrier materials by an aqueous base solution with fluoride addition
392014026166009/18/14Tcos for heterojunction solar cells
402014026415509/18/14High-selectivity wet patterning of source-drain electrodes over taos for a bce device structure
412014026423909/18/14Using multi-layer mimcaps in the tunneling regime as selector element for a cross-bar memory array
422014026830109/18/14Low-emissivity panels including magnetic layers
432014026831609/18/14Systems, methods, and production coatings of low-emissivity glass including a ternary alloy
442014026831709/18/14High solar gain low-e panel and forming the same
452014026834809/18/14Anti-reflective coatings with porosity gradient and methods for forming the same
462014026834909/18/14Optical coatings with plate-shaped particles and methods for forming the same
472014026899309/18/14Nonvolatile resistive memory element with an oxygen-gettering layer
482014027212709/18/14Anti-glare coatings with sacrificial surface roughening agents and methods for forming the same
492014027229009/18/14Polymer anti-glare coatings and methods for forming the same
502014027233509/18/14Low-e glazing performance by seed structure optimization
512014027235309/18/14Color shift of high lsg low emissivity coating after heat treatment
522014027235409/18/14Method to generate high lsg low-emissivity coating with same color after heat treatment
532014027238409/18/14Anti-reflection coatings with aqueous particle dispersions and methods for forming the same
542014027238709/18/14Anti-glare coatings with aqueous particle dispersions and methods for forming the same
552014027239009/18/14Low-e panel with improved barrier layer process window and forming the same
562014027239509/18/14Low-emissivity glass including spacer layers compatible with heat treatment
572014027245409/18/14Barrier layers for silver reflective coatings and hpc workflows for rapid screening of materials for such barrier layers
582014027245509/18/14Titanium nickel niobium alloy barrier for low-emissivity coatings
592014027333309/18/14Methods for fabricating znose alloys
602014027346709/18/14Polycrystalline-silicon etch with low-peroxide apm
612014027349709/18/14Wet processing systems and methods with replenishment
622014026202809/18/14Non-contact wet-process cell confining liquid to a region of a solid surface by differential pressure
632014026274909/18/14Methods of plasma surface treatment in a pvd chamber
642014026422409/18/14Performance enhancement of forming-free reram devices using 3d nanoparticles
652014026424109/18/14Znte on tin or pt electrodes as a resistive switching element for reram applications
662014026425209/18/14Current selector for non-volatile memory in a cross bar array based on defect and band engineering metal-dielectric-metal stacks
672014026428109/18/14Channel-last methods for making fets
682014026432009/18/14Compositional graded igzo thin film transistor
692014026432109/18/14Method of fabricating igzo by sputtering in oxidizing gas
702014026449209/18/14Counter-doped low-power finfet
712014026450709/18/14Fluorine passivation in cmos image sensors
722014026463409/18/14Finfet for rf and analog integrated circuits
732014026470809/18/14Optical absorbers
742014026474709/18/14Deposition of anisotropic dielectric layers orientationally matched to the physically separated substrate
752014026482509/18/14Ultra-low resistivity contacts
762014026487109/18/14Method to increase interconnect reliability
772014026837709/18/14Ultrathin coating for one way mirror applications
782014026900409/18/14Method for improving data retention of reram chips operating at low operating temperatures
792014027211209/18/14Combinatorial methods and systems for developing electrochromic materials and devices
802014027330009/18/14Method for forming reram chips operating at low operating temperatures
812014027330909/18/14Controlling radical lifetimes in a remote plasma chamber
822014027331109/18/14Optical absorbers
832014027331409/18/14High productivity combinatorial workflow to screen and design chalcogenide materials as non volatile memory current selector
842014027334009/18/14High productivity combinatorial screening for stable metal oxide tfts
852014027334109/18/14Methods for forming back-channel-etch devices with copper-based electrodes
862014027340409/18/14Advanced targeted microwave degas system
872014027342709/18/14Electrode for low-leakage devices
882014027349309/18/14Hydrogen plasma cleaning of germanium oxide surfaces
892014027352509/18/14Atomic layer deposition of reduced-leakage post-transition metal oxide films
902014025611109/11/14Nonvolatile memory elements
912014025256509/11/14Nucleation interface for high-k layer on germanium
922014024664009/04/14Doped electrodes used to inhibit oxygen loss in reram device
932014024764909/04/14Bipolar resistive-switching memory with a single diode per memory cell
942014023174408/21/14Methods for forming resistive switching memory elements
952014023095508/21/14Systems for discretized processing of regions of a substrate
962014023170408/21/14Silicon texturing formulations
972014022505608/14/14Resistive-switching memory elements having improved switching characteristics
982014022787108/14/14Formation of a masking layer on a dielectric region to facilitate formation of a capping layer on electrically conductive regions separated by the dielectric region
992014022788008/14/14Combinatorial plasma enhanced deposition and etchtechniques
1002014019126207/10/14Material with tunable index of refraction
1012014019136507/10/14Device design for partially oriented rutile dielectrics
1022014018267007/03/14Light trapping and antireflective coatings
1032014018369607/03/14Methods to improve leakage for zro2 based high k mim capacitor
1042014018503407/03/14Method to extend single wavelength ellipsometer to obtain spectra of refractive index
1052014018659807/03/14Base-layer consisting of two materials layer with extreme high/low index in low-e coating to improve the neutral color and transmittance performance
1062014018699507/03/14Method of fabricating cigs solar cells with high band gap by sequential processing
1072014018704107/03/14High dose ion-implanted photoresist removal using organic solvent and transition metal mixtures
1082014018705107/03/14Poly removal for replacement gate with an apm mixture
1092014018705207/03/14Selective etching of hafnium oxide using diluted hydrofluoric acid
1102014018266507/03/14Optical absorbers
1112014018303607/03/14In situ sputtering target measurement
1122014018316107/03/14Methods and systems for site-isolated combinatorial substrate processing using a mask
1132014018343207/03/14Moox-based resistance switching materials
1142014018343907/03/14Current selector for non-volatile memory in a cross bar array based on defect and band engineering metal-dielectric-metal stacks
1152014018366407/03/14Fullerene-based capacitor electrode
1162014018366607/03/14Flourine-stabilized interface
1172014018369507/03/14Methods for reproducible flash layer deposition
1182014018369707/03/14High work function, manufacturable top electrode
1192014018373707/03/14Diffusion barriers
1202014018535707/03/14Barrier design for steering elements
1212014018661707/03/14Low-emissivity coatings
1222014018701507/03/14Methods to improve leakage for zro2 based high k mim capacitor
1232014018701607/03/14High work function, manufacturable top electrode
1242014018701807/03/14Methods for reproducible flash layer deposition
1252014018826407/03/14Workflow manager and bar coding system for processing of samples/substrates in hpc (high productivity combinatorial) r&d environment
1262014017535906/26/14Diffusion barrier layer for resistive random access memory cells
1272014017561806/26/14Transition metal aluminate and high k dielectric semiconductor stack
1282014017704206/26/14Novel silver barrier materials for low-emissivity applications
1292014017865706/26/14Antireflection coatings
1302014017908206/26/14Selective etching of hafnium oxide using non-aqueous solutions
1312014017910706/26/14Etching silicon nitride using dilute hydrofluoric acid
1322014017911206/26/14High productivity combinatorial techniques for titanium nitride etching
1332014017448106/26/14Processing and cleaning substrates
1342014017454006/26/14Ald process window combinatorial screening tool
1352014017465606/26/14Method to improve the operational robustness and safety of combinatorial processing systems
1362014017490706/26/14High deposition rate chamber with co-sputtering capabilities
1372014017491006/26/14Sputter gun shield
1382014017491106/26/14Methods and systems for reducing particles during physical vapor deposition
1392014017491806/26/14Sputter gun
1402014017492106/26/14Multi-piece target and magnetron to prevent sputtering of target backing materials
1412014017542206/26/14Deposition of rutile films with very high dielectric constant
1422014017556706/26/14Method of depositing films with narrow-band conductive properties
1432014017560306/26/14Method of forming an asymmetric mimcap or a schottky device as a selector element for a cross-bar memory array
1442014017560406/26/14Two step deposition of molybdenum dioxide electrode for high quality dielectric stacks
1452014017737806/26/14High dilution ratio by successively preparing and diluting chemicals
1462014017857806/26/14Barrier layers for silver reflective coatings and hpc workflows for rapid screening of materials for such barrier layers
1472014017858306/26/14Combinatorial methods and systems for developing thermochromic materials and devices
1482014017903006/26/14Dissolution rate monitor
1492014017903306/26/14Methods for forming templated materials
1502014017909506/26/14Methods and systems for controlling gate dielectric interfaces of mosfets
1512014017910006/26/14Method to control depth profiles of dopants using a remote plasma source
1522014017911306/26/14Surface treatment methods and systems for substrate processing
1532014017912306/26/14Site-isolated rapid thermal processing methods and apparatus
1542014016647206/19/14Method and temperature control to improve low emissivity coatings
1552014016875906/19/14Methods and apparatuses for patterned low emissivity panels
1562014017030806/19/14Antireflective coatings with gradation and methods for forming the same
1572014017033806/19/14Pvd chamber and process for over-coating layer to improve emissivity for low emissivity coating
1582014017041306/19/14Silver based conductive layer for flexible electronics
1592014017042106/19/14Low-e panel with improved barrier layer and forming the same
1602014017042206/19/14Low emissivity coating with optimal base layer material and layer stack
1612014017043406/19/14Two layer ag process for low emissivity coatings
1622014016605006/19/14Chuck for mounting a semiconductor wafer for liquid immersion processing
1632014016610706/19/14Back-contact electron reflectors enhancing thin film solar cell efficiency
1642014016613406/19/14Pump with reduced number of moving parts
1652014016661606/19/14Combinatorial processing using a remote plasma source
1662014016684006/19/14Substrate carrier
1672014016695806/19/14Controlling reram forming voltage with doping
1682014016722106/19/14Methods to improve leakage of high k materials
1692014016722306/19/14Semiconductor cooling device
1702014016906206/19/14Methods of manufacturing embedded bipolar switching resistive memory
1712014017004906/19/14Low refractive index material by sputtering deposition method
1722014017033506/19/14Methods and combinatorial pecvd or peald
1732014017077506/19/14Hpc workflow for rapid screening of materials and stacks for stt-ram
1742014017080206/19/14Absorber layer for a thin film photovoltaic device with a double-graded band gap
1752014017080306/19/14Cigs absorber formed by co-sputtered indium
1762014017080606/19/14Tcos for high-efficiency crystalline si heterojunction solar cells
1772014017083306/19/14Methods to improve leakage of high k materials
1782014017085706/19/14Customizing etch selectivity with sequential multi-stage etches with complementary etchants
1792014016238406/12/14Pvd-ald-cvd hybrid hpc for work function material screening
1802014015819006/12/14Absorbers for high efficiency thin-film pv
1812014015912006/12/14Conformal doping
1822014016198906/12/14Anti-glare using a two-step texturing process
1832014016199006/12/14Anti-glare glass/substrate via novel specific combinations of dry and wet processes
1842014016239706/12/14High-efficiency thin-film photovoltaics with controlled homogeneity and defects
1852014015162606/05/14Selector device using low leakage dielectric mimcap diode
1862014015485906/05/14Methods and vehicles for high productivity combinatorial testing of materials for resistive random access memory cells
1872014015024506/05/14Pneumatic clamping mechanism for cells with adjustable height
1882014014759405/29/14Magnesium fluoride and magnesium oxyfluoride based anti-reflection coatings via chemical solution deposition processes
1892014014447105/29/14Contamination control, rinsing, and purging methods to extend the life of components within combinatorial processing systems
1902014014451205/29/14Methods and systems for dispensing different liquids for high productivity combinatorial processing
1912014014477105/29/14Cooling efficiency fluid cooled sputter guns
1922014014735005/29/14Cleaner for reactor component cleaning
1932014014758705/29/14Combinatorial spin deposition
1942014014759305/29/14Liquid cooled sputter apertured shields
1952014014153405/22/14Dielectric doping using high productivity combinatorial methods
1962014013860205/22/14Controlled localized defect paths for resistive memories
1972014013484905/15/14Combinatorial site isolated plasma assisted deposition
1982014013092205/15/14Control methods and hardware configurations for ozone delivery systems
1992014013326505/15/14Contactless magnetically driven agitation systems
2002014012403805/08/14Reactor cell isolation using differential pressure in a combinatorial reactor
2012014012435905/08/14New magnet design which improves erosion profile for pvd systems
2022014012472505/08/14Resistive random access memory cells having doped current limiting layers
2032014012478805/08/14Chemical vapor deposition system
2042014012481705/08/14Contact layers
2052014012742205/08/14Method and high-k gate performance improvement and combinatorial processing
2062014012788705/08/14Chemical vapor deposition system
2072014012797405/08/14Combinatorial tool for mechanically-assisted surface polishing and cleaning
2082014011076404/24/14Method to control amorphous oxide layer formation at interfaces of thin film stacks for memory and logic components
2092014011340304/24/14High efficiency cztse by a two-step approach
2102014011081304/24/14Absorbers for high efficiency thin-film pv
2112014010328204/17/14Diffusion barrier layer for resistive random access memory cells
2122014010328404/17/14Reram cells including taxsiyn embedded resistors
2132014010248804/17/14Method and system for improving performance and preventing corrosion in multi-module cleaning chamber
2142014010656104/17/14Graphene barrier layers for interconnects and methods for forming the same
2152014010903004/17/14Method of determining electromigration (em) lifetimes and lifetime criteria
2162014009978504/10/14Sacrificial low work function cap layer
2172014009059604/03/14Methods of combinatorial processing for screening multiple samples on a semiconductor substrate
2182014009066804/03/14In-situ cleaning assembly
2192014009246204/03/14Electrochromic device with improved transparent conductor and forming the same
2202014009403704/03/14Method and preventing native oxide regrowth
2212014008423603/27/14Ald processing techniques for forming non-volatile resistive switching memories
2222014008494803/27/14Test vehicles for evaluating resistance of thin layers
2232014008749003/27/14Method and improving particle performance
2242014007714703/20/14Methods for selective etching of a multi-layer substrate
2252014007733603/20/14Leakage reduction in dram mim capacitors
2262014007733703/20/14High temperature ald process for metal oxide for dram applications
2272014007880803/20/14Embedded nonvolatile memory elements having resistive switching characteristics
2282014008023303/20/14Combinatorial optimization of interlayer parameters
2292014008025003/20/14Method of fabricating high efficiency cigs solar cells
2302014008028203/20/14Leakage reduction in dram mim capacitors
2312014008028403/20/14High temperature ald process of metal oxide for dram applications
2322014008032203/20/14Emissivity profile control for thermal uniformity
2332014007310703/13/14Atomic layer deposition of metal oxide materials for memory applications
2342014007021303/13/14Methods for discretized processing and process sequence integration of regions of a substrate
2352014007143503/13/14High throughput quantum efficiency combinatorial characterization tool and combinatorial solar test substrates
2362014006578803/06/14Combinatorial approach for screening of ald film stacks
2372014006579903/06/14Methods and systems for low resistance contact formation
2382014006581903/06/14Methods and systems for low resistance contact formation
2392014005737102/27/14High productivity combinatorial workflow for post gate etch clean development
2402014005453102/27/14Defect enhancement of a switching layer in a nonvolatile resistive memory element
2412014005515202/27/14Circular transmission line methods compatible with combinatorial processing of semiconductors
2422014005121002/20/14Nonvolatile memory elements
2432014004801302/20/14Seed layer for zno and doped-zno thin film nucleation and methods of seed layer deposition
2442014005091402/20/14Antireflective coatings with controllable porosity and refractive index properties using a combination of thermal or chemical treatments
2452014004238402/13/14Resistive-switching nonvolatile memory elements
2462014004172202/13/14Method of fabricating high efficiency cigs solar cells
2472014003835202/06/14Non-volatile resistive-switching memories
2482014003838002/06/14Multifunctional electrode
2492014003495702/06/14Index-matched insulators



ARCHIVE: New 2015 2014 2013 2012 2011 2010 2009



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This listing is an abstract for educational and research purposes is only meant as a recent sample of applications filed, not a comprehensive history. Freshpatents.com is not affiliated or associated with Intermolecular Inc in any way and there may be associated servicemarks. This data is also published to the public by the USPTO and available for free on their website. Note that there may be alternative spellings for Intermolecular Inc with additional patents listed. Browse our Agent directory for other possible listings. Page by FreshPatents.com

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