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Intermolecular Inc patents


      
Recent patent applications related to Intermolecular Inc. Intermolecular Inc is listed as an Agent/Assignee. Note: Intermolecular Inc may have other listings under different names/spellings. We're not affiliated with Intermolecular Inc, we're just tracking patents.

ARCHIVE: New 2016 2015 2014 2013 2012 2011 2010 2009 | Company Directory "I" | Intermolecular Inc-related inventors




Search recent Press Releases: Intermolecular Inc-related press releases
Count Application # Date Intermolecular Inc patents (updated weekly) - BOOKMARK this page
12016011830904/28/16  new patent  Minimal contact wet processing systems and methods
22016011844004/28/16  new patent  Photo-induced msm stack
32016011130204/21/16 Systems and methods for wet processing substrates with rotating splash shield
42016011147104/21/16 Sic-si3n4 nanolaminates as a semiconductor for msm snapback selector devices
52016011160304/21/16 Indium zinc oxide for transparent conductive oxide layer and methods of forming thereof
62016010201304/14/16 Low-e panels and methods for forming the same
72016009794504/07/16 Transparent resistive random access memory cells
82016009930304/07/16 Doped electrode for dram capacitor stack
92016009930404/07/16 Monx as a top electrode for tiox based dram applications
102016009946804/07/16 Solid-state batteries and methods for forming the same
112016009948204/07/16 Solid-state batteries with improved electrode conductivity and methods for forming the same
122016009371103/31/16 Tantalum carbide metal gate stack for mid-gap work function applications
132016009362503/31/16 Method to improve dram performance
142016009377203/31/16 Methods for reducing interface contact resistivity
152016004299102/11/16 Molecular self-assembly in substrate processing
162016003563102/04/16 Atomic layer deposition of hfalc as a metal gate workfunction material in mos devices
172016002800301/28/16 Shaping reram conductive filaments by controlling grain-boundary density
182016002800801/28/16 Reram cells with diffusion-resistant metal silicon oxide layers
192016002038801/21/16 Resistive switching by breaking and re-forming covalent bonds
202016002039201/21/16 Current-limiting electrodes
212016001336701/14/16 Oxides with thin metallic layers as transparent ohmic contacts for p-type and n-type gallium nitride
222015038030912/31/15 Metal-insulator-semiconductor (mis) contact with controlled defect density
232015036815212/24/15 Low-e panels and methods for forming the same
242015037187212/24/15 Solution based etching of titanium carbide and titanium nitride structures
252015036247312/17/15 Low-e panels utilizing high-entropy alloys and combinatorial methods and systems for developing the same
262015034500512/03/15 Seed layer for low-e applications
272015034883312/03/15 Method to etch cu/ta/tan selectively using dilute aqueous hf/hcl solution
282015033743211/26/15 Barrier layers for silver reflective coatings and hpc workflows for rapid screening of materials for such barrier layers
292015033836211/26/15 Combinatorial screening of metallic diffusion barriers
302015032578811/12/15 Embedded nonvolatile memory elements having resistive switching characteristics
312015032736611/12/15 Silver based conductive layer for flexible electronics
322015031844611/05/15 Low-temperature fabrication of transparent conductive contacts for p-gan and n-gan
332015031091010/29/15 Multi-level memory array having resistive elements for multi-bit data storage
342015031125710/29/15 Resistive random access memory cells having shared electrodes with transistor devices
352015031139710/29/15 Zinc stannate ohmic contacts for p-type gallium nitride
362015031304610/29/15 Superconducting circuits with reduced microwave absorption
372015030305710/22/15 Methods for fabricating integrated circuits including fluorine incorporation
382015029181210/15/15 Low emissivity glass incorporating phosphorescent rare earth compounds
392015029181210/15/15 Low emissivity glass incorporating phosphorescent rare earth compounds
402015028761610/08/15 Methods for discretized processing and process sequence integration of regions of a substrate
412015027967010/01/15 Novel method to grow in-situ crystalline igzo
422015027967410/01/15 Caac igzo deposited at room temperature
432015026266309/17/15 Methods of manufacturing embedded bipolar switching resistive memory
442015025534009/10/15 Method to etch cu/ta/tan selectively using dilute aqueous hf/hcl solution
452015025571609/10/15 Non-volatile resistive-switching memories
462015025533209/10/15 Ultra-low resistivity contacts
472015023237608/20/15 Low-e glazing performance by seed structure optimization
482015023237808/20/15 Low-e panels with ternary metal oxide dielectric layer and forming the same
492015023626008/20/15 Creating an embedded reram memory from a high-k metal gate transistor structure
502015023587508/20/15 Modular flow cell and adjustment system
512015022859508/13/15 Methods for etching copper during the fabrication of integrated circuits
522015022871008/13/15 Methods to improve electrical performance of zro2 based high-k dielectric materials for dram applications
532015020036107/16/15 Transition metal oxide bilayers
542015019181507/09/15 Titanium nickel niobium alloy barrier for low-emissivity coatings
552015019196507/09/15 Low-e panels and methods for forming the same
562015018428307/02/15 Ternary metal nitride formation by annealing constituent layers
572015018517007/02/15 X-ray fluorescence analysis of thin-film coverage defects
582015018757407/02/15 Igzo with intra-layer variations and methods for forming the same
592015018759607/02/15 Wet etching of silicon containing antireflective coatings
602015018766407/02/15 High productivity combinatorial testing of multiple work function materials on the same semiconductor substrate
612015018784107/02/15 Method of forming current-programmable inline resistor
622015018795607/02/15 Igzo devices with increased drive current and methods for forming the same
632015018795807/02/15 Igzo devices with reduced electrode contact resistivity and methods for forming the same
642015018803907/02/15 Embedded resistors with oxygen gettering layers
652015018804307/02/15 Embedded resistors for resistive random access memory cells
662015018804407/02/15 Embedded resistors for resistive random access memory cells
672015018804507/02/15 Stacked bi-layer as the low power switchable rram
682015018804607/02/15 Methods, systems, and improving thin film resistor reliability
692015018804807/02/15 Diffusion barrier layer for resistive random access memory cells
702015018849207/02/15 Voltage controlling assemblies including variable resistance devices
712015018428607/02/15 Hydrogenated amorphous silicon dielectric for superconducting devices
722015018428707/02/15 Systems and methods for parallel combinatorial vapor deposition processing
732015018429807/02/15 Methods and combinatorial pecvd or peald
742015018786507/02/15 Capacitors including inner and outer electrodes
752015018798207/02/15 Zinc blende cadmium-manganese-telluride with reduced hole compensation effects and methods for forming the same
762015017612206/25/15 Low-temperature growth of complex compound films
772015017758306/25/15 Systems, methods, and integrated glass units having adjustable solar heat gains
782015017931606/25/15 Methods of forming nitrides at low substrate temperatures
792015017943606/25/15 Plasma densification of dielectrics for improved dielectric loss tangent
802015017944206/25/15 Methods for forming crystalline igzo with a seed layer
812015017950806/25/15 Tantalum-based copper barriers and methods for forming the same
822015017983906/25/15 Contact layers for photovoltaic devices
832015017991406/25/15 Annealed dielectrics and heat-tolerant conductors for superconducting electronics
842015017991706/25/15 Atomic layer deposition of metal-oxide tunnel barriers using optimized oxidants
852015017991806/25/15 Plasma cleaning of superconducting layers
862015017993006/25/15 Schottky barriers for resistive random access memory cells
872015017993506/25/15 Atomic layer deposition of metal oxides for memory applications
882015017993706/25/15 Metal organic chemical vapor deposition of embedded resistors for reram cells
892015017611706/25/15 Interchangeable sputter gun head
902015017612406/25/15 Methods for rapid generation of ald saturation curves using segmented spatial ald
912015017731106/25/15 Methods and systems for evaluating igzo with respect to nbis
922015017758506/25/15 Systems, methods, and integrated glass units having adjustable transmissivities
932015017943806/25/15 Gate stacks and ohmic contacts for sic devices
942015017944406/25/15 Methods for forming crystalline igzo through power supply mode optimization
952015017944606/25/15 Methods for forming crystalline igzo through processing condition optimization
962015017944806/25/15 Methods for forming crystalline igzo through annealing
972015017948706/25/15 Multipurpose combinatorial vapor phase deposition chamber
982015017950006/25/15 Formation of a masking layer on a dielectric region to facilitate formation of a capping layer on electrically conductive regions separated by the dielectric region
992015017950906/25/15 Plasma treatment of low-k surface to improve barrier deposition
1002015017968306/25/15 High productivity combinatorial material screening for metal oxide films
1012015017968406/25/15 High productivity combinatorial material screening for stable, high-mobility non-silicon thin film transistors
1022015017973006/25/15 Zro-based high k dielectric stack for logic decoupling capacitor or embedded dram
1032015017974306/25/15 Graphene as a ge surface passivation layer to control metal-semiconductor junction resistivity
1042015017977306/25/15 Igzo devices with reduced threshhold voltage shift and methods for forming the same
1052015017981506/25/15 Quantum well igzo devices and methods for forming the same
1062015017991306/25/15 Fluorine passivation of dielectric for superconducting electronics
1072015017991506/25/15 Fluorine passivation during deposition of dielectrics for superconducting electronics
1082015017991606/25/15 Catalytic growth of josephson junction tunnel barrier
1092015017993306/25/15 Tiox based selector element
1102015017993406/25/15 Zrox/sto/zrox based selector element
1112015016679506/18/15 Anti-glare coatings with ultraviolet-absorbing particles and methods for forming the same
1122015017076006/18/15 Resistive switching sample and hold
1132015017090806/18/15 One-way valves for controlling flow into deposition chamber
1142015017126006/18/15 Low resistivity nitrogen-doped zinc telluride and methods for forming the same
1152015017132306/18/15 Resistive random access memory cell having three or more resistive states
1162015017083706/18/15 Dielectric k value tuning of hah stack for improved tddb performance of logic decoupling capacitor or embedded dram
1172015017091206/18/15 Systems and methods for forming semiconductor devices
1182015017092306/18/15 Feature size reduction in semiconductor devices by selective wet etching
1192015017109506/18/15 Memory arrays for both good data retention and low power operation
1202015017122706/18/15 Igzo devices with composite channel layers and methods for forming the same
1212015015876206/11/15 Simplified protection layer for abrasion resistant glass coatings and methods for forming the same
1222015016252706/11/15 Morphology control of ultra-thin meox layer
1232015016253006/11/15 Nonvolatile memory device having a current limiting element
1242015016211106/11/15 Transparent conductive films and methods for forming the same
1252015015548506/04/15 Nonvolatile resistive memory element with an oxygen-gettering layer
1262015015536806/04/15 Amorphous silicon thin-film transistors with reduced electrode contact resistivity and methods for forming the same
1272015015548606/04/15 Resistive-switching memory elements having improved switching characteristics
1282015014634105/28/15 Ald dielectric films with leakage-reducing impurity layers
1292015014406105/28/15 Combinatorial plasma enhanced deposition techniques
1302015014786505/28/15 Resistive-switching memory elements having improved switching characteristics
1312015014786605/28/15 Resistive-switching memory element
1322015013706205/21/15 Mimcaps with quantum wells as selector elements for crossbar memory arrays
1332015013706405/21/15 Reduction of forming voltage in semiconductor devices
1342015014077205/21/15 Method for fabricating a bipolar transistor having self-aligned emitter contact
1352015014083405/21/15 Al2o3 surface nucleation preparation with remote oxygen plasma
1362015014083805/21/15 Two step deposition of high-k gate dielectric materials
1372015013731505/21/15 Dram mim capacitor using non-noble electrodes
1382015014069605/21/15 Combinatorial solid source doping process development
1392015014077905/21/15 Selector device using low leakage dielectric mimcap diode
1402015014083605/21/15 Methods to control sio2 etching during fluorine doping of si/sio2 interface
1412015012982605/14/15 Flexible non-volatile memory
1422015013006505/14/15 Method to etch cu/ta/tan selectively using dilute aqueous hf/h2so4 solution
1432015013295305/14/15 Etching of semiconductor structures that include titanium-based layers
1442015013293805/14/15 Methods and systems for forming reliable gate stack on semiconductors
1452015012307105/07/15 Method for forming metal oxides and silicides in a memory device
1462015011882804/30/15 Reduction of native oxides by annealing in reducing gas or plasma
1472015010456904/16/15 Barrier layers for silver reflective coatings and hpc workflows for rapid screening of materials for such barrier layers
1482015010530804/16/15 Aqua regia and hydrogen peroxide hcl combination to remove ni and nipt residues
1492015010168304/16/15 Touchless site isolation using gas bearing
1502015010436004/16/15 Combinatorial flow system and method
1512015009715304/09/15 Non-volatile resistive-switching memories
1522015009110504/02/15 Continuous tuning of erbium silicide metal gate effective work function via a pvd nanolaminate approach for mosfet applications
1532015009387604/02/15 Doped oxide dielectrics for resistive random access memory cells
1542015009103204/02/15 Nickel-titanium and related alloys as silver diffusion barriers
1552015009350004/02/15 Corrosion-resistant silver coatings with improved adhesion to iii-v materials
1562015009389804/02/15 Combinatorial process system
1572015008713003/26/15 Dram mim capacitor using non-noble electrodes
1582015007972703/19/15 Amorphous igzo devices and methods for forming the same
1592015006931903/12/15 Method of forming anneal-resistant embedded resistor for non-volatile memory application
1602015006075303/05/15 Controlling composition of multiple oxides in resistive switching layers using atomic layer deposition
1612015006091003/05/15 Conductive transparent reflector
1622015006436103/05/15 Uv treatment for ald film densification
1632015006487303/05/15 Controlling reram forming voltage with doping
1642015005391002/26/15 Multistate nonvolatile memory elements
1652015005674802/26/15 Methods for forming resistive switching memory elements by heating deposited layers
1662015005674902/26/15 Atomic layer deposition of metal oxide materials for memory applications
1672015005672302/26/15 Processing substrates using site-isolated processing
1682015005678002/26/15 Full wafer processing by multiple passes through a combinatorial reactor
1692015004191202/12/15 Gate stacks including taxsiyo for mosfets
1702015003489602/05/15 Resistive-switching nonvolatile memory elements
1712015003489802/05/15 Confined defect profiling within resistive random memory access cells
1722015003508502/05/15 Doped high-k dielectrics and methods for forming the same
1732015003795902/05/15 Bipolar multistate nonvolatile memory
1742015003114801/29/15 Shadow mask for patterned deposition on substrates
1752015002177201/22/15 Mixed-metal barrier films optimized by high-productivity combinatorial pvd
1762015002418201/22/15 Antireflective coatings with self-cleaning, moisture resistance and antimicrobial properties
1772015002177401/22/15 Molecular self-assembly in substrate processing
1782015002567001/22/15 Substrate processing including correction for deposition location
1792015001617801/15/15 All around electrode for novel 3d rram applications
1802015001745601/15/15 Reducing voids caused by trapped acid on a dielectric surface
1812015001778001/15/15 Nonvolatile resistive memory element with an integrated oxygen isolation structure
1822015001781501/15/15 Combinatorial non-contact wet processing
1832015000838601/08/15 Morphology control of ultra-thin meox layer
1842015001070501/08/15 Methods for forming templated materials
1852015000155501/01/15 Methods for coating a substrate with an amphiphilic compound
1862015000167601/01/15 Method of forming an asymmetric mimcap or a schottky device as a selector element for a cross-bar memory array
1872014037424012/25/14 Multifunctional electrode
1882014037793112/25/14 Metal aluminum nitride embedded resistors for resistive random memory access cells
1892014037064612/18/14 Absorber layer for a thin film photovoltaic device with a double-graded band gap
1902014032250710/30/14 Systems, methods, and production coatings of low-emissivity glass
1912014032288410/30/14 Nonvolatile resistive memory element with a silicon-based switching layer
1922014031533110/23/14 Screening of surface passivation processes for germanium channels
1932014030852810/16/14 Systems, methods, and production coatings of low-emissivity glass
1942014030267110/09/14 Selective etching of copper and copper-barrier materials by an aqueous base solution with fluoride addition
1952014026166009/18/14 Tcos for heterojunction solar cells
1962014026415509/18/14 High-selectivity wet patterning of source-drain electrodes over taos for a bce device structure
1972014026423909/18/14 Using multi-layer mimcaps in the tunneling regime as selector element for a cross-bar memory array
1982014026830109/18/14 Low-emissivity panels including magnetic layers
1992014026831609/18/14 Systems, methods, and production coatings of low-emissivity glass including a ternary alloy
2002014026831709/18/14 High solar gain low-e panel and forming the same
2012014026834809/18/14 Anti-reflective coatings with porosity gradient and methods for forming the same
2022014026834909/18/14 Optical coatings with plate-shaped particles and methods for forming the same
2032014026899309/18/14 Nonvolatile resistive memory element with an oxygen-gettering layer
2042014027212709/18/14 Anti-glare coatings with sacrificial surface roughening agents and methods for forming the same
2052014027229009/18/14 Polymer anti-glare coatings and methods for forming the same
2062014027233509/18/14 Low-e glazing performance by seed structure optimization
2072014027235309/18/14 Color shift of high lsg low emissivity coating after heat treatment
2082014027235409/18/14 Method to generate high lsg low-emissivity coating with same color after heat treatment
2092014027238409/18/14 Anti-reflection coatings with aqueous particle dispersions and methods for forming the same
2102014027238709/18/14 Anti-glare coatings with aqueous particle dispersions and methods for forming the same
2112014027239009/18/14 Low-e panel with improved barrier layer process window and forming the same
2122014027239509/18/14 Low-emissivity glass including spacer layers compatible with heat treatment
2132014027245409/18/14 Barrier layers for silver reflective coatings and hpc workflows for rapid screening of materials for such barrier layers
2142014027245509/18/14 Titanium nickel niobium alloy barrier for low-emissivity coatings
2152014027333309/18/14 Methods for fabricating znose alloys
2162014027346709/18/14 Polycrystalline-silicon etch with low-peroxide apm
2172014027349709/18/14 Wet processing systems and methods with replenishment
2182014026202809/18/14 Non-contact wet-process cell confining liquid to a region of a solid surface by differential pressure
2192014026274909/18/14 Methods of plasma surface treatment in a pvd chamber
2202014026422409/18/14 Performance enhancement of forming-free reram devices using 3d nanoparticles
2212014026424109/18/14 Znte on tin or pt electrodes as a resistive switching element for reram applications
2222014026425209/18/14 Current selector for non-volatile memory in a cross bar array based on defect and band engineering metal-dielectric-metal stacks
2232014026428109/18/14 Channel-last methods for making fets
2242014026432009/18/14 Compositional graded igzo thin film transistor
2252014026432109/18/14 Method of fabricating igzo by sputtering in oxidizing gas
2262014026449209/18/14 Counter-doped low-power finfet
2272014026450709/18/14 Fluorine passivation in cmos image sensors
2282014026463409/18/14 Finfet for rf and analog integrated circuits
2292014026470809/18/14 Optical absorbers
2302014026474709/18/14 Deposition of anisotropic dielectric layers orientationally matched to the physically separated substrate
2312014026482509/18/14 Ultra-low resistivity contacts
2322014026487109/18/14 Method to increase interconnect reliability
2332014026837709/18/14 Ultrathin coating for one way mirror applications
2342014026900409/18/14 Method for improving data retention of reram chips operating at low operating temperatures
2352014027211209/18/14 Combinatorial methods and systems for developing electrochromic materials and devices
2362014027330009/18/14 Method for forming reram chips operating at low operating temperatures
2372014027330909/18/14 Controlling radical lifetimes in a remote plasma chamber
2382014027331109/18/14 Optical absorbers
2392014027331409/18/14 High productivity combinatorial workflow to screen and design chalcogenide materials as non volatile memory current selector
2402014027334009/18/14 High productivity combinatorial screening for stable metal oxide tfts
2412014027334109/18/14 Methods for forming back-channel-etch devices with copper-based electrodes
2422014027340409/18/14 Advanced targeted microwave degas system
2432014027342709/18/14 Electrode for low-leakage devices
2442014027349309/18/14 Hydrogen plasma cleaning of germanium oxide surfaces
2452014027352509/18/14 Atomic layer deposition of reduced-leakage post-transition metal oxide films
2462014025611109/11/14 Nonvolatile memory elements
2472014025256509/11/14 Nucleation interface for high-k layer on germanium
2482014024664009/04/14 Doped electrodes used to inhibit oxygen loss in reram device
2492014024764909/04/14 Bipolar resistive-switching memory with a single diode per memory cell



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