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Intermolecular Inc_20131212

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Intermolecular Inc patents


      
Recent patent applications related to Intermolecular Inc. Intermolecular Inc is listed as an Agent/Assignee. Note: Intermolecular Inc may have other listings under different names/spellings. We're not affiliated with Intermolecular Inc, we're just tracking patents.

ARCHIVE: New 2015 2014 2013 2012 2011 2010 2009 | Company Directory "I" | Intermolecular Inc-related inventors


Aqua regia and hydrogen peroxide hcl combination to remove ni and nipt residues

Intermolecular

Aqua regia and hydrogen peroxide hcl combination to remove ni and nipt residues

Search recent Press Releases: Intermolecular Inc-related press releases
Count Application # Date Intermolecular Inc patents (updated weekly) - BOOKMARK this page
12015010456904/16/15 new patent  Barrier layers for silver reflective coatings and hpc workflows for rapid screening of materials for such barrier layers
22015010530804/16/15 new patent  Aqua regia and hydrogen peroxide hcl combination to remove ni and nipt residues
32015010168304/16/15 new patent  Touchless site isolation using gas bearing
42015010436004/16/15 new patent  Combinatorial flow system and method
52015009715304/09/15Non-volatile resistive-switching memories
62015009110504/02/15Continuous tuning of erbium silicide metal gate effective work function via a pvd nanolaminate approach for mosfet applications
72015009387604/02/15Doped oxide dielectrics for resistive random access memory cells
82015009103204/02/15Nickel-titanium and related alloys as silver diffusion barriers
92015009350004/02/15Corrosion-resistant silver coatings with improved adhesion to iii-v materials
102015009389804/02/15Combinatorial process system
112015008713003/26/15Dram mim capacitor using non-noble electrodes
122015007972703/19/15Amorphous igzo devices and methods for forming the same
132015006931903/12/15Method of forming anneal-resistant embedded resistor for non-volatile memory application
142015006075303/05/15Controlling composition of multiple oxides in resistive switching layers using atomic layer deposition
152015006091003/05/15Conductive transparent reflector
162015006436103/05/15Uv treatment for ald film densification
172015006487303/05/15Controlling reram forming voltage with doping
182015005391002/26/15Multistate nonvolatile memory elements
192015005674802/26/15Methods for forming resistive switching memory elements by heating deposited layers
202015005674902/26/15Atomic layer deposition of metal oxide materials for memory applications
212015005672302/26/15Processing substrates using site-isolated processing
222015005678002/26/15Full wafer processing by multiple passes through a combinatorial reactor
232015004191202/12/15Gate stacks including taxsiyo for mosfets
242015003489602/05/15Resistive-switching nonvolatile memory elements
252015003489802/05/15Confined defect profiling within resistive random memory access cells
262015003508502/05/15Doped high-k dielectrics and methods for forming the same
272015003795902/05/15Bipolar multistate nonvolatile memory
282015003114801/29/15Shadow mask for patterned deposition on substrates
292015002177201/22/15Mixed-metal barrier films optimized by high-productivity combinatorial pvd
302015002418201/22/15Antireflective coatings with self-cleaning, moisture resistance and antimicrobial properties
312015002177401/22/15Molecular self-assembly in substrate processing
322015002567001/22/15Substrate processing including correction for deposition location
332015001617801/15/15All around electrode for novel 3d rram applications
342015001745601/15/15Reducing voids caused by trapped acid on a dielectric surface
352015001778001/15/15Nonvolatile resistive memory element with an integrated oxygen isolation structure
362015001781501/15/15Combinatorial non-contact wet processing
372015000838601/08/15Morphology control of ultra-thin meox layer
382015001070501/08/15Methods for forming templated materials
392015000155501/01/15Methods for coating a substrate with an amphiphilic compound
402015000167601/01/15Method of forming an asymmetric mimcap or a schottky device as a selector element for a cross-bar memory array
412014037424012/25/14Multifunctional electrode
422014037793112/25/14Metal aluminum nitride embedded resistors for resistive random memory access cells
432014037064612/18/14Absorber layer for a thin film photovoltaic device with a double-graded band gap
442014032250710/30/14Systems, methods, and production coatings of low-emissivity glass
452014032288410/30/14Nonvolatile resistive memory element with a silicon-based switching layer
462014031533110/23/14Screening of surface passivation processes for germanium channels
472014030852810/16/14Systems, methods, and production coatings of low-emissivity glass
482014030267110/09/14Selective etching of copper and copper-barrier materials by an aqueous base solution with fluoride addition
492014026166009/18/14Tcos for heterojunction solar cells
502014026415509/18/14High-selectivity wet patterning of source-drain electrodes over taos for a bce device structure
512014026423909/18/14Using multi-layer mimcaps in the tunneling regime as selector element for a cross-bar memory array
522014026830109/18/14Low-emissivity panels including magnetic layers
532014026831609/18/14Systems, methods, and production coatings of low-emissivity glass including a ternary alloy
542014026831709/18/14High solar gain low-e panel and forming the same
552014026834809/18/14Anti-reflective coatings with porosity gradient and methods for forming the same
562014026834909/18/14Optical coatings with plate-shaped particles and methods for forming the same
572014026899309/18/14Nonvolatile resistive memory element with an oxygen-gettering layer
582014027212709/18/14Anti-glare coatings with sacrificial surface roughening agents and methods for forming the same
592014027229009/18/14Polymer anti-glare coatings and methods for forming the same
602014027233509/18/14Low-e glazing performance by seed structure optimization
612014027235309/18/14Color shift of high lsg low emissivity coating after heat treatment
622014027235409/18/14Method to generate high lsg low-emissivity coating with same color after heat treatment
632014027238409/18/14Anti-reflection coatings with aqueous particle dispersions and methods for forming the same
642014027238709/18/14Anti-glare coatings with aqueous particle dispersions and methods for forming the same
652014027239009/18/14Low-e panel with improved barrier layer process window and forming the same
662014027239509/18/14Low-emissivity glass including spacer layers compatible with heat treatment
672014027245409/18/14Barrier layers for silver reflective coatings and hpc workflows for rapid screening of materials for such barrier layers
682014027245509/18/14Titanium nickel niobium alloy barrier for low-emissivity coatings
692014027333309/18/14Methods for fabricating znose alloys
702014027346709/18/14Polycrystalline-silicon etch with low-peroxide apm
712014027349709/18/14Wet processing systems and methods with replenishment
722014026202809/18/14Non-contact wet-process cell confining liquid to a region of a solid surface by differential pressure
732014026274909/18/14Methods of plasma surface treatment in a pvd chamber
742014026422409/18/14Performance enhancement of forming-free reram devices using 3d nanoparticles
752014026424109/18/14Znte on tin or pt electrodes as a resistive switching element for reram applications
762014026425209/18/14Current selector for non-volatile memory in a cross bar array based on defect and band engineering metal-dielectric-metal stacks
772014026428109/18/14Channel-last methods for making fets
782014026432009/18/14Compositional graded igzo thin film transistor
792014026432109/18/14Method of fabricating igzo by sputtering in oxidizing gas
802014026449209/18/14Counter-doped low-power finfet
812014026450709/18/14Fluorine passivation in cmos image sensors
822014026463409/18/14Finfet for rf and analog integrated circuits
832014026470809/18/14Optical absorbers
842014026474709/18/14Deposition of anisotropic dielectric layers orientationally matched to the physically separated substrate
852014026482509/18/14Ultra-low resistivity contacts
862014026487109/18/14Method to increase interconnect reliability
872014026837709/18/14Ultrathin coating for one way mirror applications
882014026900409/18/14Method for improving data retention of reram chips operating at low operating temperatures
892014027211209/18/14Combinatorial methods and systems for developing electrochromic materials and devices
902014027330009/18/14Method for forming reram chips operating at low operating temperatures
912014027330909/18/14Controlling radical lifetimes in a remote plasma chamber
922014027331109/18/14Optical absorbers
932014027331409/18/14High productivity combinatorial workflow to screen and design chalcogenide materials as non volatile memory current selector
942014027334009/18/14High productivity combinatorial screening for stable metal oxide tfts
952014027334109/18/14Methods for forming back-channel-etch devices with copper-based electrodes
962014027340409/18/14Advanced targeted microwave degas system
972014027342709/18/14Electrode for low-leakage devices
982014027349309/18/14Hydrogen plasma cleaning of germanium oxide surfaces
992014027352509/18/14Atomic layer deposition of reduced-leakage post-transition metal oxide films
1002014025611109/11/14Nonvolatile memory elements
1012014025256509/11/14Nucleation interface for high-k layer on germanium
1022014024664009/04/14Doped electrodes used to inhibit oxygen loss in reram device
1032014024764909/04/14Bipolar resistive-switching memory with a single diode per memory cell
1042014023174408/21/14Methods for forming resistive switching memory elements
1052014023095508/21/14Systems for discretized processing of regions of a substrate
1062014023170408/21/14Silicon texturing formulations
1072014022505608/14/14Resistive-switching memory elements having improved switching characteristics
1082014022787108/14/14Formation of a masking layer on a dielectric region to facilitate formation of a capping layer on electrically conductive regions separated by the dielectric region
1092014022788008/14/14Combinatorial plasma enhanced deposition and etchtechniques
1102014019126207/10/14Material with tunable index of refraction
1112014019136507/10/14Device design for partially oriented rutile dielectrics
1122014018267007/03/14Light trapping and antireflective coatings
1132014018369607/03/14Methods to improve leakage for zro2 based high k mim capacitor
1142014018503407/03/14Method to extend single wavelength ellipsometer to obtain spectra of refractive index
1152014018659807/03/14Base-layer consisting of two materials layer with extreme high/low index in low-e coating to improve the neutral color and transmittance performance
1162014018699507/03/14Method of fabricating cigs solar cells with high band gap by sequential processing
1172014018704107/03/14High dose ion-implanted photoresist removal using organic solvent and transition metal mixtures
1182014018705107/03/14Poly removal for replacement gate with an apm mixture
1192014018705207/03/14Selective etching of hafnium oxide using diluted hydrofluoric acid
1202014018266507/03/14Optical absorbers
1212014018303607/03/14In situ sputtering target measurement
1222014018316107/03/14Methods and systems for site-isolated combinatorial substrate processing using a mask
1232014018343207/03/14Moox-based resistance switching materials
1242014018343907/03/14Current selector for non-volatile memory in a cross bar array based on defect and band engineering metal-dielectric-metal stacks
1252014018366407/03/14Fullerene-based capacitor electrode
1262014018366607/03/14Flourine-stabilized interface
1272014018369507/03/14Methods for reproducible flash layer deposition
1282014018369707/03/14High work function, manufacturable top electrode
1292014018373707/03/14Diffusion barriers
1302014018535707/03/14Barrier design for steering elements
1312014018661707/03/14Low-emissivity coatings
1322014018701507/03/14Methods to improve leakage for zro2 based high k mim capacitor
1332014018701607/03/14High work function, manufacturable top electrode
1342014018701807/03/14Methods for reproducible flash layer deposition
1352014018826407/03/14Workflow manager and bar coding system for processing of samples/substrates in hpc (high productivity combinatorial) r&d environment
1362014017535906/26/14Diffusion barrier layer for resistive random access memory cells
1372014017561806/26/14Transition metal aluminate and high k dielectric semiconductor stack
1382014017704206/26/14Novel silver barrier materials for low-emissivity applications
1392014017865706/26/14Antireflection coatings
1402014017908206/26/14Selective etching of hafnium oxide using non-aqueous solutions
1412014017910706/26/14Etching silicon nitride using dilute hydrofluoric acid
1422014017911206/26/14High productivity combinatorial techniques for titanium nitride etching
1432014017448106/26/14Processing and cleaning substrates
1442014017454006/26/14Ald process window combinatorial screening tool
1452014017465606/26/14Method to improve the operational robustness and safety of combinatorial processing systems
1462014017490706/26/14High deposition rate chamber with co-sputtering capabilities
1472014017491006/26/14Sputter gun shield
1482014017491106/26/14Methods and systems for reducing particles during physical vapor deposition
1492014017491806/26/14Sputter gun
1502014017492106/26/14Multi-piece target and magnetron to prevent sputtering of target backing materials
1512014017542206/26/14Deposition of rutile films with very high dielectric constant
1522014017556706/26/14Method of depositing films with narrow-band conductive properties
1532014017560306/26/14Method of forming an asymmetric mimcap or a schottky device as a selector element for a cross-bar memory array
1542014017560406/26/14Two step deposition of molybdenum dioxide electrode for high quality dielectric stacks
1552014017737806/26/14High dilution ratio by successively preparing and diluting chemicals
1562014017857806/26/14Barrier layers for silver reflective coatings and hpc workflows for rapid screening of materials for such barrier layers
1572014017858306/26/14Combinatorial methods and systems for developing thermochromic materials and devices
1582014017903006/26/14Dissolution rate monitor
1592014017903306/26/14Methods for forming templated materials
1602014017909506/26/14Methods and systems for controlling gate dielectric interfaces of mosfets
1612014017910006/26/14Method to control depth profiles of dopants using a remote plasma source
1622014017911306/26/14Surface treatment methods and systems for substrate processing
1632014017912306/26/14Site-isolated rapid thermal processing methods and apparatus
1642014016647206/19/14Method and temperature control to improve low emissivity coatings
1652014016875906/19/14Methods and apparatuses for patterned low emissivity panels
1662014017030806/19/14Antireflective coatings with gradation and methods for forming the same
1672014017033806/19/14Pvd chamber and process for over-coating layer to improve emissivity for low emissivity coating
1682014017041306/19/14Silver based conductive layer for flexible electronics
1692014017042106/19/14Low-e panel with improved barrier layer and forming the same
1702014017042206/19/14Low emissivity coating with optimal base layer material and layer stack
1712014017043406/19/14Two layer ag process for low emissivity coatings
1722014016605006/19/14Chuck for mounting a semiconductor wafer for liquid immersion processing
1732014016610706/19/14Back-contact electron reflectors enhancing thin film solar cell efficiency
1742014016613406/19/14Pump with reduced number of moving parts
1752014016661606/19/14Combinatorial processing using a remote plasma source
1762014016684006/19/14Substrate carrier
1772014016695806/19/14Controlling reram forming voltage with doping
1782014016722106/19/14Methods to improve leakage of high k materials
1792014016722306/19/14Semiconductor cooling device
1802014016906206/19/14Methods of manufacturing embedded bipolar switching resistive memory
1812014017004906/19/14Low refractive index material by sputtering deposition method
1822014017033506/19/14Methods and combinatorial pecvd or peald
1832014017077506/19/14Hpc workflow for rapid screening of materials and stacks for stt-ram
1842014017080206/19/14Absorber layer for a thin film photovoltaic device with a double-graded band gap
1852014017080306/19/14Cigs absorber formed by co-sputtered indium
1862014017080606/19/14Tcos for high-efficiency crystalline si heterojunction solar cells
1872014017083306/19/14Methods to improve leakage of high k materials
1882014017085706/19/14Customizing etch selectivity with sequential multi-stage etches with complementary etchants
1892014016238406/12/14Pvd-ald-cvd hybrid hpc for work function material screening
1902014015819006/12/14Absorbers for high efficiency thin-film pv
1912014015912006/12/14Conformal doping
1922014016198906/12/14Anti-glare using a two-step texturing process
1932014016199006/12/14Anti-glare glass/substrate via novel specific combinations of dry and wet processes
1942014016239706/12/14High-efficiency thin-film photovoltaics with controlled homogeneity and defects
1952014015162606/05/14Selector device using low leakage dielectric mimcap diode
1962014015485906/05/14Methods and vehicles for high productivity combinatorial testing of materials for resistive random access memory cells
1972014015024506/05/14Pneumatic clamping mechanism for cells with adjustable height
1982014014759405/29/14Magnesium fluoride and magnesium oxyfluoride based anti-reflection coatings via chemical solution deposition processes
1992014014447105/29/14Contamination control, rinsing, and purging methods to extend the life of components within combinatorial processing systems
2002014014451205/29/14Methods and systems for dispensing different liquids for high productivity combinatorial processing
2012014014477105/29/14Cooling efficiency fluid cooled sputter guns
2022014014735005/29/14Cleaner for reactor component cleaning
2032014014758705/29/14Combinatorial spin deposition
2042014014759305/29/14Liquid cooled sputter apertured shields
2052014014153405/22/14Dielectric doping using high productivity combinatorial methods
2062014013860205/22/14Controlled localized defect paths for resistive memories
2072014013484905/15/14Combinatorial site isolated plasma assisted deposition
2082014013092205/15/14Control methods and hardware configurations for ozone delivery systems
2092014013326505/15/14Contactless magnetically driven agitation systems
2102014012403805/08/14Reactor cell isolation using differential pressure in a combinatorial reactor
2112014012435905/08/14New magnet design which improves erosion profile for pvd systems
2122014012472505/08/14Resistive random access memory cells having doped current limiting layers
2132014012478805/08/14Chemical vapor deposition system
2142014012481705/08/14Contact layers
2152014012742205/08/14Method and high-k gate performance improvement and combinatorial processing
2162014012788705/08/14Chemical vapor deposition system
2172014012797405/08/14Combinatorial tool for mechanically-assisted surface polishing and cleaning
2182014011076404/24/14Method to control amorphous oxide layer formation at interfaces of thin film stacks for memory and logic components
2192014011340304/24/14High efficiency cztse by a two-step approach
2202014011081304/24/14Absorbers for high efficiency thin-film pv
2212014010328204/17/14Diffusion barrier layer for resistive random access memory cells
2222014010328404/17/14Reram cells including taxsiyn embedded resistors
2232014010248804/17/14Method and system for improving performance and preventing corrosion in multi-module cleaning chamber
2242014010656104/17/14Graphene barrier layers for interconnects and methods for forming the same
2252014010903004/17/14Method of determining electromigration (em) lifetimes and lifetime criteria
2262014009978504/10/14Sacrificial low work function cap layer
2272014009059604/03/14Methods of combinatorial processing for screening multiple samples on a semiconductor substrate
2282014009066804/03/14In-situ cleaning assembly
2292014009246204/03/14Electrochromic device with improved transparent conductor and forming the same
2302014009403704/03/14Method and preventing native oxide regrowth
2312014008423603/27/14Ald processing techniques for forming non-volatile resistive switching memories
2322014008494803/27/14Test vehicles for evaluating resistance of thin layers
2332014008749003/27/14Method and improving particle performance
2342014007714703/20/14Methods for selective etching of a multi-layer substrate
2352014007733603/20/14Leakage reduction in dram mim capacitors
2362014007733703/20/14High temperature ald process for metal oxide for dram applications
2372014007880803/20/14Embedded nonvolatile memory elements having resistive switching characteristics
2382014008023303/20/14Combinatorial optimization of interlayer parameters
2392014008025003/20/14Method of fabricating high efficiency cigs solar cells
2402014008028203/20/14Leakage reduction in dram mim capacitors
2412014008028403/20/14High temperature ald process of metal oxide for dram applications
2422014008032203/20/14Emissivity profile control for thermal uniformity
2432014007310703/13/14Atomic layer deposition of metal oxide materials for memory applications
2442014007021303/13/14Methods for discretized processing and process sequence integration of regions of a substrate
2452014007143503/13/14High throughput quantum efficiency combinatorial characterization tool and combinatorial solar test substrates
2462014006578803/06/14Combinatorial approach for screening of ald film stacks
2472014006579903/06/14Methods and systems for low resistance contact formation
2482014006581903/06/14Methods and systems for low resistance contact formation
2492014005737102/27/14High productivity combinatorial workflow for post gate etch clean development



ARCHIVE: New 2015 2014 2013 2012 2011 2010 2009



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