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Intermolecular, Inc. patents


      
Recent patent applications related to Intermolecular, Inc.. Intermolecular, Inc. is listed as an Agent/Assignee. Note: Intermolecular, Inc. may have other listings under different names/spellings. We're not affiliated with Intermolecular, Inc., we're just tracking patents.

ARCHIVE: New 2014 2013 2012 2011 2010 2009 | Company Directory "I" | Intermolecular, Inc.-related inventors



Intermolecular

Device design for partially oriented rutile dielectrics

Intermolecular

Light trapping and antireflective coatings

Intermolecular

Methods to improve leakage for zro2 based high k mim capacitor

Search recent Press Releases: Intermolecular, Inc.-related press releases
Count Application # Date Intermolecular, Inc. patents (updated weekly) - BOOKMARK this page
12014019126207/10/14Material with tunable index of refraction
22014019136507/10/14Device design for partially oriented rutile dielectrics
32014018267007/03/14Light trapping and antireflective coatings
42014018369607/03/14Methods to improve leakage for zro2 based high k mim capacitor
52014018503407/03/14Method to extend single wavelength ellipsometer to obtain spectra of refractive index
62014018659807/03/14Base-layer consisting of two materials layer with extreme high/low index in low-e coating to improve the neutral color and transmittance performance
72014018699507/03/14Method of fabricating cigs solar cells with high band gap by sequential processing
82014018704107/03/14High dose ion-implanted photoresist removal using organic solvent and transition metal mixtures
92014018705107/03/14Poly removal for replacement gate with an apm mixture
102014018705207/03/14Selective etching of hafnium oxide using diluted hydrofluoric acid
112014018266507/03/14Optical absorbers
122014018303607/03/14In situ sputtering target measurement
132014018316107/03/14Methods and systems for site-isolated combinatorial substrate processing using a mask
142014018343207/03/14Moox-based resistance switching materials
152014018343907/03/14Current selector for non-volatile memory in a cross bar array based on defect and band engineering metal-dielectric-metal stacks
162014018366407/03/14Fullerene-based capacitor electrode
172014018366607/03/14Flourine-stabilized interface
182014018369507/03/14Methods for reproducible flash layer deposition
192014018369707/03/14High work function, manufacturable top electrode
202014018373707/03/14Diffusion barriers
212014018535707/03/14Barrier design for steering elements
222014018661707/03/14Low-emissivity coatings
232014018701507/03/14Methods to improve leakage for zro2 based high k mim capacitor
242014018701607/03/14High work function, manufacturable top electrode
252014018701807/03/14Methods for reproducible flash layer deposition
262014018826407/03/14Workflow manager and bar coding system for processing of samples/substrates in hpc (high productivity combinatorial) r&d environment
272014017535906/26/14Diffusion barrier layer for resistive random access memory cells
282014017561806/26/14Transition metal aluminate and high k dielectric semiconductor stack
292014017704206/26/14Novel silver barrier materials for low-emissivity applications
302014017865706/26/14Antireflection coatings
312014017908206/26/14Selective etching of hafnium oxide using non-aqueous solutions
322014017910706/26/14Etching silicon nitride using dilute hydrofluoric acid
332014017911206/26/14High productivity combinatorial techniques for titanium nitride etching
342014017448106/26/14Processing and cleaning substrates
352014017454006/26/14Ald process window combinatorial screening tool
362014017465606/26/14Method to improve the operational robustness and safety of combinatorial processing systems
372014017490706/26/14High deposition rate chamber with co-sputtering capabilities
382014017491006/26/14Sputter gun shield
392014017491106/26/14Methods and systems for reducing particles during physical vapor deposition
402014017491806/26/14Sputter gun
412014017492106/26/14Multi-piece target and magnetron to prevent sputtering of target backing materials
422014017542206/26/14Deposition of rutile films with very high dielectric constant
432014017556706/26/14Method of depositing films with narrow-band conductive properties
442014017560306/26/14Method of forming an asymmetric mimcap or a schottky device as a selector element for a cross-bar memory array
452014017560406/26/14Two step deposition of molybdenum dioxide electrode for high quality dielectric stacks
462014017737806/26/14High dilution ratio by successively preparing and diluting chemicals
472014017857806/26/14Barrier layers for silver reflective coatings and hpc workflows for rapid screening of materials for such barrier layers
482014017858306/26/14Combinatorial methods and systems for developing thermochromic materials and devices
492014017903006/26/14Dissolution rate monitor
502014017903306/26/14Methods for forming templated materials
512014017909506/26/14Methods and systems for controlling gate dielectric interfaces of mosfets
522014017910006/26/14Method to control depth profiles of dopants using a remote plasma source
532014017911306/26/14Surface treatment methods and systems for substrate processing
542014017912306/26/14Site-isolated rapid thermal processing methods and apparatus
552014016647206/19/14Method and apparatus for temperature control to improve low emissivity coatings
562014016875906/19/14Methods and apparatuses for patterned low emissivity panels
572014017030806/19/14Antireflective coatings with gradation and methods for forming the same
582014017033806/19/14Pvd chamber and process for over-coating layer to improve emissivity for low emissivity coating
592014017041306/19/14Silver based conductive layer for flexible electronics
602014017042106/19/14Low-e panel with improved barrier layer and method for forming the same
612014017042206/19/14Low emissivity coating with optimal base layer material and layer stack
622014017043406/19/14Two layer ag process for low emissivity coatings
632014016605006/19/14Chuck for mounting a semiconductor wafer for liquid immersion processing
642014016610706/19/14Back-contact electron reflectors enhancing thin film solar cell efficiency
652014016613406/19/14Pump with reduced number of moving parts
662014016661606/19/14Combinatorial processing using a remote plasma source
672014016684006/19/14Substrate carrier
682014016695806/19/14Controlling reram forming voltage with doping
692014016722106/19/14Methods to improve leakage of high k materials
702014016722306/19/14Semiconductor cooling device
712014016906206/19/14Methods of manufacturing embedded bipolar switching resistive memory
722014017004906/19/14Low refractive index material by sputtering deposition method
732014017033506/19/14Methods and apparatus for combinatorial pecvd or peald
742014017077506/19/14Hpc workflow for rapid screening of materials and stacks for stt-ram
752014017080206/19/14Absorber layer for a thin film photovoltaic device with a double-graded band gap
762014017080306/19/14Cigs absorber formed by co-sputtered indium
772014017080606/19/14Tcos for high-efficiency crystalline si heterojunction solar cells
782014017083306/19/14Methods to improve leakage of high k materials
792014017085706/19/14Customizing etch selectivity with sequential multi-stage etches with complementary etchants
802014016238406/12/14Pvd-ald-cvd hybrid hpc for work function material screening
812014015819006/12/14Absorbers for high efficiency thin-film pv
822014015912006/12/14Conformal doping
832014016198906/12/14Anti-glare using a two-step texturing process
842014016199006/12/14Anti-glare glass/substrate via novel specific combinations of dry and wet processes
852014016239706/12/14High-efficiency thin-film photovoltaics with controlled homogeneity and defects
862014015162606/05/14Selector device using low leakage dielectric mimcap diode
872014015485906/05/14Methods and vehicles for high productivity combinatorial testing of materials for resistive random access memory cells
882014015024506/05/14Pneumatic clamping mechanism for cells with adjustable height
892014014759405/29/14Magnesium fluoride and magnesium oxyfluoride based anti-reflection coatings via chemical solution deposition processes
902014014447105/29/14Contamination control, rinsing, and purging methods to extend the life of components within combinatorial processing systems
912014014451205/29/14Methods and systems for dispensing different liquids for high productivity combinatorial processing
922014014477105/29/14Cooling efficiency method for fluid cooled sputter guns
932014014735005/29/14Cleaner for reactor component cleaning
942014014758705/29/14Combinatorial spin deposition
952014014759305/29/14Liquid cooled sputter apertured shields
962014014153405/22/14Dielectric doping using high productivity combinatorial methods
972014013860205/22/14Controlled localized defect paths for resistive memories
982014014153405/22/14Dielectric doping using high productivity combinatorial methods
992014013860205/22/14Controlled localized defect paths for resistive memories
1002014013484905/15/14Combinatorial site isolated plasma assisted deposition
1012014013092205/15/14Control methods and hardware configurations for ozone delivery systems
1022014013326505/15/14Contactless magnetically driven agitation systems
1032014013484905/15/14Combinatorial site isolated plasma assisted deposition
1042014013092205/15/14Control methods and hardware configurations for ozone delivery systems
1052014013326505/15/14Contactless magnetically driven agitation systems
1062014012403805/08/14Reactor cell isolation using differential pressure in a combinatorial reactor
1072014012435905/08/14New magnet design which improves erosion profile for pvd systems
1082014012472505/08/14Resistive random access memory cells having doped current limiting layers
1092014012478805/08/14Chemical vapor deposition system
1102014012481705/08/14Contact layers
1112014012742205/08/14Method and apparatus for high-k gate performance improvement and combinatorial processing
1122014012788705/08/14Chemical vapor deposition system
1132014012797405/08/14Combinatorial tool for mechanically-assisted surface polishing and cleaning
1142014012403805/08/14Reactor cell isolation using differential pressure in a combinatorial reactor
1152014012435905/08/14New magnet design which improves erosion profile for pvd systems
1162014012472505/08/14Resistive random access memory cells having doped current limiting layers
1172014012478805/08/14Chemical vapor deposition system
1182014012481705/08/14Contact layers
1192014012742205/08/14Method and apparatus for high-k gate performance improvement and combinatorial processing
1202014012788705/08/14Chemical vapor deposition system
1212014012797405/08/14Combinatorial tool for mechanically-assisted surface polishing and cleaning
1222014011076404/24/14Method to control amorphous oxide layer formation at interfaces of thin film stacks for memory and logic components
1232014011340304/24/14High efficiency cztse by a two-step approach
1242014011081304/24/14Absorbers for high efficiency thin-film pv
1252014011076404/24/14Method to control amorphous oxide layer formation at interfaces of thin film stacks for memory and logic components
1262014011340304/24/14High efficiency cztse by a two-step approach
1272014011081304/24/14Absorbers for high efficiency thin-film pv
1282014010328204/17/14Diffusion barrier layer for resistive random access memory cells
1292014010328404/17/14Reram cells including taxsiyn embedded resistors
1302014010248804/17/14Method and system for improving performance and preventing corrosion in multi-module cleaning chamber
1312014010656104/17/14Graphene barrier layers for interconnects and methods for forming the same
1322014010903004/17/14Method of determining electromigration (em) lifetimes and lifetime criteria
1332014010328204/17/14Diffusion barrier layer for resistive random access memory cells
1342014010328404/17/14Reram cells including taxsiyn embedded resistors
1352014010248804/17/14Method and system for improving performance and preventing corrosion in multi-module cleaning chamber
1362014010656104/17/14Graphene barrier layers for interconnects and methods for forming the same
1372014010903004/17/14Method of determining electromigration (em) lifetimes and lifetime criteria
1382014009978504/10/14Sacrificial low work function cap layer
1392014009978504/10/14Sacrificial low work function cap layer
1402014009978504/10/14Sacrificial low work function cap layer
1412014009059604/03/14Methods of combinatorial processing for screening multiple samples on a semiconductor substrate
1422014009066804/03/14In-situ cleaning assembly
1432014009246204/03/14Electrochromic device with improved transparent conductor and method for forming the same
1442014009403704/03/14Method and apparatus for preventing native oxide regrowth
1452014009059604/03/14Methods of combinatorial processing for screening multiple samples on a semiconductor substrate
1462014009066804/03/14In-situ cleaning assembly
1472014009246204/03/14Electrochromic device with improved transparent conductor and method for forming the same
1482014009403704/03/14Method and apparatus for preventing native oxide regrowth
1492014008423603/27/14Ald processing techniques for forming non-volatile resistive switching memories
1502014008494803/27/14Test vehicles for evaluating resistance of thin layers
1512014008749003/27/14Method and apparatus for improving particle performance
1522014008423603/27/14Ald processing techniques for forming non-volatile resistive switching memories
1532014008494803/27/14Test vehicles for evaluating resistance of thin layers
1542014008749003/27/14Method and apparatus for improving particle performance
1552014007714703/20/14Methods for selective etching of a multi-layer substrate
1562014007733603/20/14Leakage reduction in dram mim capacitors
1572014007733703/20/14High temperature ald process for metal oxide for dram applications
1582014007880803/20/14Embedded nonvolatile memory elements having resistive switching characteristics
1592014008023303/20/14Combinatorial optimization of interlayer parameters
1602014008025003/20/14Method of fabricating high efficiency cigs solar cells
1612014008028203/20/14Leakage reduction in dram mim capacitors
1622014008028403/20/14High temperature ald process of metal oxide for dram applications
1632014008032203/20/14Emissivity profile control for thermal uniformity
1642014007714703/20/14Methods for selective etching of a multi-layer substrate
1652014007733603/20/14Leakage reduction in dram mim capacitors
1662014007733703/20/14High temperature ald process for metal oxide for dram applications
1672014007880803/20/14Embedded nonvolatile memory elements having resistive switching characteristics
1682014008023303/20/14Combinatorial optimization of interlayer parameters
1692014008025003/20/14Method of fabricating high efficiency cigs solar cells
1702014008028203/20/14Leakage reduction in dram mim capacitors
1712014008028403/20/14High temperature ald process of metal oxide for dram applications
1722014008032203/20/14Emissivity profile control for thermal uniformity
1732014007310703/13/14Atomic layer deposition of metal oxide materials for memory applications
1742014007021303/13/14Methods for discretized processing and process sequence integration of regions of a substrate
1752014007143503/13/14High throughput quantum efficiency combinatorial characterization tool and method for combinatorial solar test substrates
1762014007310703/13/14Atomic layer deposition of metal oxide materials for memory applications
1772014007021303/13/14Methods for discretized processing and process sequence integration of regions of a substrate
1782014007143503/13/14High throughput quantum efficiency combinatorial characterization tool and method for combinatorial solar test substrates
1792014006578803/06/14Combinatorial approach for screening of ald film stacks
1802014006579903/06/14Methods and systems for low resistance contact formation
1812014006581903/06/14Methods and systems for low resistance contact formation
1822014006578803/06/14Combinatorial approach for screening of ald film stacks
1832014006579903/06/14Methods and systems for low resistance contact formation
1842014006581903/06/14Methods and systems for low resistance contact formation
1852014005737102/27/14High productivity combinatorial workflow for post gate etch clean development
1862014005453102/27/14Defect enhancement of a switching layer in a nonvolatile resistive memory element
1872014005515202/27/14Circular transmission line methods compatible with combinatorial processing of semiconductors
1882014005121002/20/14Nonvolatile memory elements
1892014004801302/20/14Seed layer for zno and doped-zno thin film nucleation and methods of seed layer deposition
1902014005091402/20/14Antireflective coatings with controllable porosity and refractive index properties using a combination of thermal or chemical treatments
1912014004238402/13/14Resistive-switching nonvolatile memory elements
1922014004172202/13/14Method of fabricating high efficiency cigs solar cells
1932014003835202/06/14Non-volatile resistive-switching memories
1942014003838002/06/14Multifunctional electrode
1952014003495702/06/14Index-matched insulators
1962014003784102/06/14Antireflective coatings with controllable porosity and durability properties using controlled exposure to alkaline vapor
1972014003885502/06/14High pressure parallel fixed bed reactor and method
1982014003088701/30/14Sputtering and aligning multiple layers having different boundaries
1992014001468101/16/14Calibration of a chemical dispense system
2002014001489201/16/14Resistive-switching memory element
2012014000793801/09/14Laser annealing for thin film solar cells
2022014000876301/09/14Distributed substrate top contact for moscap measurements
2032014000983401/09/14Novel antireflective coatings with graded refractive index
2042014001136701/09/14Low temperature etching of silicon nitride structures using phosphoric acid solutions
2052014000143001/02/14Surface treatment to improve resistive-switching characteristics
2062014000143101/02/14Reduction of forming voltage in semiconductor devices
2072014000433401/02/14Antireflective coatings with self-cleaning, moisture resistance and antimicrobial properties
2082013034223012/26/13High throughput current-voltage combinatorial characterization tool and method for combinatorial solar test substrates
2092013034064812/26/13Electroless deposition of platinum on copper
2102013034080512/26/13Methods of building crystalline silicon solar cells for use in combinatorial screening
2112013034158412/26/13Resistive-switching memory elements having improved switching characteristics
2122013034464612/26/13Absorbers for high-efficiency thin-film pv
2132013033449112/19/13Methods for forming nickel oxide films for use with resistive switching memory devices
2142013033830512/19/13Methods for coating a substrate with an amphiphilic compound
2152013032816812/12/13Manufacturable high-k dram mim capacitor structure
2162013033090312/12/13Manufacturable high-k dram mim capacitor structure
2172013033090212/12/13Enhanced non-noble electrode layers for dram capacitor cell
2182013033129612/12/13Method and system for combinatorial electroplating and characterization
2192013032816812/12/13Manufacturable high-k dram mim capacitor structure
2202013033090312/12/13Manufacturable high-k dram mim capacitor structure
2212013033090212/12/13Enhanced non-noble electrode layers for dram capacitor cell
2222013033129612/12/13Method and system for combinatorial electroplating and characterization
2232013032389012/05/13Aqua regia and hydrogen peroxide hcl combination to remove ni and nipt residues
2242013031984712/05/13Methods and apparatuses for low resistivity ag thin film using collimated sputtering
2252013032049512/05/13Integration of non-noble dram electrode
2262013032386312/05/13Method for generating graphene structures
2272013031356611/28/13Gan epitaxy with migration enhancement and surface energy modification
2282013031365611/28/13Methods of atomic layer deposition of hafnium oxide / erbium oxide bi-layer as advanced gate dielectrics
2292013031365711/28/13Methods of forming fluorinated hafnium oxide gate dielectrics by atomic layer deposition
2302013031497411/28/13Bipolar resistive-switching memory with a single diode per memory cell
2312013031647211/28/13High productivity combinatorial oxide terracing and pvd/ald metal deposition combined with lithography for gate work function extraction
2322013031654611/28/13Methods of atomic layer deposition of hafnium oxide as gate dielectrics
2332013030980411/21/13Method of fabricating high efficiency cigs solar cells
2342013030980511/21/13Method of fabricating high efficiency cigs solar cells
2352013029574811/07/13Method of uniform selenization and sulferization in a tube furnace
2362013028085310/24/13Combinatorial methods for making cigs solar cells
2372013027010310/17/13Method of enabling and controlling ozone concentration and flow
2382013027010410/17/13Combinatorial processing using mosaic sputtering targets
2392013024418609/19/13Composition and method for removing photoresist and bottom anti-reflective coating for a semiconductor substrate
2402013024442509/19/13Formation of a masking layer on a dielectric region to facilitate formation of a capping layer on electrically conductive regions separated by the dielectric region
2412013023663209/12/13Graphene combinatorial processing
2422013022873509/05/13Interfacial oxide used as switching layer in a nonvolatile resistive memory element
2432013023096209/05/13Methods for forming nickel oxide films for use with resistive switching memory devices/us
2442013022131708/29/13Creating an embedded reram memory from a high-k metal gate transistor structure
2452013022130708/29/13Nonvolatile resistive memory element with an integrated oxygen isolation structure
2462013022131408/29/13Memory device having an integrated two-terminal current limiting resistor
2472013022492808/29/13Memory device having an integrated two-terminal current limiting resistor
2482013022131708/29/13Creating an embedded reram memory from a high-k metal gate transistor structure
2492013022130708/29/13Nonvolatile resistive memory element with an integrated oxygen isolation structure


ARCHIVE: New 2014 2013 2012 2011 2010 2009



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This listing is an abstract for educational and research purposes is only meant as a recent sample of applications filed, not a comprehensive history. Freshpatents.com is not affiliated or associated with Intermolecular, Inc. in any way and there may be associated servicemarks. This data is also published to the public by the USPTO and available for free on their website. Note that there may be alternative spellings for Intermolecular, Inc. with additional patents listed. Browse our Agent directory for other possible listings. Page by FreshPatents.com

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