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Intermolecular Inc patents


      
Recent patent applications related to Intermolecular Inc. Intermolecular Inc is listed as an Agent/Assignee. Note: Intermolecular Inc may have other listings under different names/spellings. We're not affiliated with Intermolecular Inc, we're just tracking patents.

ARCHIVE: New 2015 2014 2013 2012 2011 2010 2009 | Company Directory "I" | Intermolecular Inc-related inventors


Titanium nickel niobium alloy barrier for low-emissivity coatings

Intermolecular

Titanium nickel niobium alloy barrier for low-emissivity coatings

Low-e panels and methods for forming the same

Intermolecular

Low-e panels and methods for forming the same

Ternary metal nitride  formation by annealing constituent layers

Intermolecular

Ternary metal nitride formation by annealing constituent layers



Search recent Press Releases: Intermolecular Inc-related press releases
Count Application # Date Intermolecular Inc patents (updated weekly) - BOOKMARK this page
12015020036107/16/15 Transition metal oxide bilayers
22015019181507/09/15 Titanium nickel niobium alloy barrier for low-emissivity coatings
32015019196507/09/15 Low-e panels and methods for forming the same
42015018428307/02/15 Ternary metal nitride formation by annealing constituent layers
52015018517007/02/15 X-ray fluorescence analysis of thin-film coverage defects
62015018757407/02/15 Igzo with intra-layer variations and methods for forming the same
72015018759607/02/15 Wet etching of silicon containing antireflective coatings
82015018766407/02/15 High productivity combinatorial testing of multiple work function materials on the same semiconductor substrate
92015018784107/02/15 Method of forming current-programmable inline resistor
102015018795607/02/15 Igzo devices with increased drive current and methods for forming the same
112015018795807/02/15 Igzo devices with reduced electrode contact resistivity and methods for forming the same
122015018803907/02/15 Embedded resistors with oxygen gettering layers
132015018804307/02/15 Embedded resistors for resistive random access memory cells
142015018804407/02/15 Embedded resistors for resistive random access memory cells
152015018804507/02/15 Stacked bi-layer as the low power switchable rram
162015018804607/02/15 Methods, systems, and improving thin film resistor reliability
172015018804807/02/15 Diffusion barrier layer for resistive random access memory cells
182015018849207/02/15 Voltage controlling assemblies including variable resistance devices
192015018428607/02/15 Hydrogenated amorphous silicon dielectric for superconducting devices
202015018428707/02/15 Systems and methods for parallel combinatorial vapor deposition processing
212015018429807/02/15 Methods and combinatorial pecvd or peald
222015018786507/02/15 Capacitors including inner and outer electrodes
232015018798207/02/15 Zinc blende cadmium-manganese-telluride with reduced hole compensation effects and methods for forming the same
242015017612206/25/15 Low-temperature growth of complex compound films
252015017758306/25/15 Systems, methods, and integrated glass units having adjustable solar heat gains
262015017931606/25/15 Methods of forming nitrides at low substrate temperatures
272015017943606/25/15 Plasma densification of dielectrics for improved dielectric loss tangent
282015017944206/25/15 Methods for forming crystalline igzo with a seed layer
292015017950806/25/15 Tantalum-based copper barriers and methods for forming the same
302015017983906/25/15 Contact layers for photovoltaic devices
312015017991406/25/15 Annealed dielectrics and heat-tolerant conductors for superconducting electronics
322015017991706/25/15 Atomic layer deposition of metal-oxide tunnel barriers using optimized oxidants
332015017991806/25/15 Plasma cleaning of superconducting layers
342015017993006/25/15 Schottky barriers for resistive random access memory cells
352015017993506/25/15 Atomic layer deposition of metal oxides for memory applications
362015017993706/25/15 Metal organic chemical vapor deposition of embedded resistors for reram cells
372015017611706/25/15 Interchangeable sputter gun head
382015017612406/25/15 Methods for rapid generation of ald saturation curves using segmented spatial ald
392015017731106/25/15 Methods and systems for evaluating igzo with respect to nbis
402015017758506/25/15 Systems, methods, and integrated glass units having adjustable transmissivities
412015017943806/25/15 Gate stacks and ohmic contacts for sic devices
422015017944406/25/15 Methods for forming crystalline igzo through power supply mode optimization
432015017944606/25/15 Methods for forming crystalline igzo through processing condition optimization
442015017944806/25/15 Methods for forming crystalline igzo through annealing
452015017948706/25/15 Multipurpose combinatorial vapor phase deposition chamber
462015017950006/25/15 Formation of a masking layer on a dielectric region to facilitate formation of a capping layer on electrically conductive regions separated by the dielectric region
472015017950906/25/15 Plasma treatment of low-k surface to improve barrier deposition
482015017968306/25/15 High productivity combinatorial material screening for metal oxide films
492015017968406/25/15 High productivity combinatorial material screening for stable, high-mobility non-silicon thin film transistors
502015017973006/25/15 Zro-based high k dielectric stack for logic decoupling capacitor or embedded dram
512015017974306/25/15 Graphene as a ge surface passivation layer to control metal-semiconductor junction resistivity
522015017977306/25/15 Igzo devices with reduced threshhold voltage shift and methods for forming the same
532015017981506/25/15 Quantum well igzo devices and methods for forming the same
542015017991306/25/15 Fluorine passivation of dielectric for superconducting electronics
552015017991506/25/15 Fluorine passivation during deposition of dielectrics for superconducting electronics
562015017991606/25/15 Catalytic growth of josephson junction tunnel barrier
572015017993306/25/15 Tiox based selector element
582015017993406/25/15 Zrox/sto/zrox based selector element
592015016679506/18/15 Anti-glare coatings with ultraviolet-absorbing particles and methods for forming the same
602015017076006/18/15 Resistive switching sample and hold
612015017090806/18/15 One-way valves for controlling flow into deposition chamber
622015017126006/18/15 Low resistivity nitrogen-doped zinc telluride and methods for forming the same
632015017132306/18/15 Resistive random access memory cell having three or more resistive states
642015017083706/18/15 Dielectric k value tuning of hah stack for improved tddb performance of logic decoupling capacitor or embedded dram
652015017091206/18/15 Systems and methods for forming semiconductor devices
662015017092306/18/15 Feature size reduction in semiconductor devices by selective wet etching
672015017109506/18/15 Memory arrays for both good data retention and low power operation
682015017122706/18/15 Igzo devices with composite channel layers and methods for forming the same
692015015876206/11/15 Simplified protection layer for abrasion resistant glass coatings and methods for forming the same
702015016252706/11/15 Morphology control of ultra-thin meox layer
712015016253006/11/15 Nonvolatile memory device having a current limiting element
722015016211106/11/15 Transparent conductive films and methods for forming the same
732015015548506/04/15 Nonvolatile resistive memory element with an oxygen-gettering layer
742015015536806/04/15 Amorphous silicon thin-film transistors with reduced electrode contact resistivity and methods for forming the same
752015015548606/04/15 Resistive-switching memory elements having improved switching characteristics
762015014634105/28/15 Ald dielectric films with leakage-reducing impurity layers
772015014406105/28/15 Combinatorial plasma enhanced deposition techniques
782015014786505/28/15 Resistive-switching memory elements having improved switching characteristics
792015014786605/28/15 Resistive-switching memory element
802015013706205/21/15 Mimcaps with quantum wells as selector elements for crossbar memory arrays
812015013706405/21/15 Reduction of forming voltage in semiconductor devices
822015014077205/21/15 Method for fabricating a bipolar transistor having self-aligned emitter contact
832015014083405/21/15 Al2o3 surface nucleation preparation with remote oxygen plasma
842015014083805/21/15 Two step deposition of high-k gate dielectric materials
852015013731505/21/15 Dram mim capacitor using non-noble electrodes
862015014069605/21/15 Combinatorial solid source doping process development
872015014077905/21/15 Selector device using low leakage dielectric mimcap diode
882015014083605/21/15 Methods to control sio2 etching during fluorine doping of si/sio2 interface
892015012982605/14/15 Flexible non-volatile memory
902015013006505/14/15 Method to etch cu/ta/tan selectively using dilute aqueous hf/h2so4 solution
912015013295305/14/15 Etching of semiconductor structures that include titanium-based layers
922015013293805/14/15 Methods and systems for forming reliable gate stack on semiconductors
932015012307105/07/15 Method for forming metal oxides and silicides in a memory device
942015011882804/30/15 Reduction of native oxides by annealing in reducing gas or plasma
952015010456904/16/15 Barrier layers for silver reflective coatings and hpc workflows for rapid screening of materials for such barrier layers
962015010530804/16/15 Aqua regia and hydrogen peroxide hcl combination to remove ni and nipt residues
972015010168304/16/15 Touchless site isolation using gas bearing
982015010436004/16/15 Combinatorial flow system and method
992015009715304/09/15 Non-volatile resistive-switching memories
1002015009110504/02/15 Continuous tuning of erbium silicide metal gate effective work function via a pvd nanolaminate approach for mosfet applications
1012015009387604/02/15 Doped oxide dielectrics for resistive random access memory cells
1022015009103204/02/15 Nickel-titanium and related alloys as silver diffusion barriers
1032015009350004/02/15 Corrosion-resistant silver coatings with improved adhesion to iii-v materials
1042015009389804/02/15 Combinatorial process system
1052015008713003/26/15 Dram mim capacitor using non-noble electrodes
1062015007972703/19/15 Amorphous igzo devices and methods for forming the same
1072015006931903/12/15 Method of forming anneal-resistant embedded resistor for non-volatile memory application
1082015006075303/05/15 Controlling composition of multiple oxides in resistive switching layers using atomic layer deposition
1092015006091003/05/15 Conductive transparent reflector
1102015006436103/05/15 Uv treatment for ald film densification
1112015006487303/05/15 Controlling reram forming voltage with doping
1122015005391002/26/15 Multistate nonvolatile memory elements
1132015005674802/26/15 Methods for forming resistive switching memory elements by heating deposited layers
1142015005674902/26/15 Atomic layer deposition of metal oxide materials for memory applications
1152015005672302/26/15 Processing substrates using site-isolated processing
1162015005678002/26/15 Full wafer processing by multiple passes through a combinatorial reactor
1172015004191202/12/15 Gate stacks including taxsiyo for mosfets
1182015003489602/05/15 Resistive-switching nonvolatile memory elements
1192015003489802/05/15 Confined defect profiling within resistive random memory access cells
1202015003508502/05/15 Doped high-k dielectrics and methods for forming the same
1212015003795902/05/15 Bipolar multistate nonvolatile memory
1222015003114801/29/15 Shadow mask for patterned deposition on substrates
1232015002177201/22/15 Mixed-metal barrier films optimized by high-productivity combinatorial pvd
1242015002418201/22/15 Antireflective coatings with self-cleaning, moisture resistance and antimicrobial properties
1252015002177401/22/15 Molecular self-assembly in substrate processing
1262015002567001/22/15 Substrate processing including correction for deposition location
1272015001617801/15/15 All around electrode for novel 3d rram applications
1282015001745601/15/15 Reducing voids caused by trapped acid on a dielectric surface
1292015001778001/15/15 Nonvolatile resistive memory element with an integrated oxygen isolation structure
1302015001781501/15/15 Combinatorial non-contact wet processing
1312015000838601/08/15 Morphology control of ultra-thin meox layer
1322015001070501/08/15 Methods for forming templated materials
1332015000155501/01/15 Methods for coating a substrate with an amphiphilic compound
1342015000167601/01/15 Method of forming an asymmetric mimcap or a schottky device as a selector element for a cross-bar memory array
1352014037424012/25/14 Multifunctional electrode
1362014037793112/25/14 Metal aluminum nitride embedded resistors for resistive random memory access cells
1372014037064612/18/14 Absorber layer for a thin film photovoltaic device with a double-graded band gap
1382014032250710/30/14 Systems, methods, and production coatings of low-emissivity glass
1392014032288410/30/14 Nonvolatile resistive memory element with a silicon-based switching layer
1402014031533110/23/14 Screening of surface passivation processes for germanium channels
1412014030852810/16/14 Systems, methods, and production coatings of low-emissivity glass
1422014030267110/09/14 Selective etching of copper and copper-barrier materials by an aqueous base solution with fluoride addition
1432014026166009/18/14 Tcos for heterojunction solar cells
1442014026415509/18/14 High-selectivity wet patterning of source-drain electrodes over taos for a bce device structure
1452014026423909/18/14 Using multi-layer mimcaps in the tunneling regime as selector element for a cross-bar memory array
1462014026830109/18/14 Low-emissivity panels including magnetic layers
1472014026831609/18/14 Systems, methods, and production coatings of low-emissivity glass including a ternary alloy
1482014026831709/18/14 High solar gain low-e panel and forming the same
1492014026834809/18/14 Anti-reflective coatings with porosity gradient and methods for forming the same
1502014026834909/18/14 Optical coatings with plate-shaped particles and methods for forming the same
1512014026899309/18/14 Nonvolatile resistive memory element with an oxygen-gettering layer
1522014027212709/18/14 Anti-glare coatings with sacrificial surface roughening agents and methods for forming the same
1532014027229009/18/14 Polymer anti-glare coatings and methods for forming the same
1542014027233509/18/14 Low-e glazing performance by seed structure optimization
1552014027235309/18/14 Color shift of high lsg low emissivity coating after heat treatment
1562014027235409/18/14 Method to generate high lsg low-emissivity coating with same color after heat treatment
1572014027238409/18/14 Anti-reflection coatings with aqueous particle dispersions and methods for forming the same
1582014027238709/18/14 Anti-glare coatings with aqueous particle dispersions and methods for forming the same
1592014027239009/18/14 Low-e panel with improved barrier layer process window and forming the same
1602014027239509/18/14 Low-emissivity glass including spacer layers compatible with heat treatment
1612014027245409/18/14 Barrier layers for silver reflective coatings and hpc workflows for rapid screening of materials for such barrier layers
1622014027245509/18/14 Titanium nickel niobium alloy barrier for low-emissivity coatings
1632014027333309/18/14 Methods for fabricating znose alloys
1642014027346709/18/14 Polycrystalline-silicon etch with low-peroxide apm
1652014027349709/18/14 Wet processing systems and methods with replenishment
1662014026202809/18/14 Non-contact wet-process cell confining liquid to a region of a solid surface by differential pressure
1672014026274909/18/14 Methods of plasma surface treatment in a pvd chamber
1682014026422409/18/14 Performance enhancement of forming-free reram devices using 3d nanoparticles
1692014026424109/18/14 Znte on tin or pt electrodes as a resistive switching element for reram applications
1702014026425209/18/14 Current selector for non-volatile memory in a cross bar array based on defect and band engineering metal-dielectric-metal stacks
1712014026428109/18/14 Channel-last methods for making fets
1722014026432009/18/14 Compositional graded igzo thin film transistor
1732014026432109/18/14 Method of fabricating igzo by sputtering in oxidizing gas
1742014026449209/18/14 Counter-doped low-power finfet
1752014026450709/18/14 Fluorine passivation in cmos image sensors
1762014026463409/18/14 Finfet for rf and analog integrated circuits
1772014026470809/18/14 Optical absorbers
1782014026474709/18/14 Deposition of anisotropic dielectric layers orientationally matched to the physically separated substrate
1792014026482509/18/14 Ultra-low resistivity contacts
1802014026487109/18/14 Method to increase interconnect reliability
1812014026837709/18/14 Ultrathin coating for one way mirror applications
1822014026900409/18/14 Method for improving data retention of reram chips operating at low operating temperatures
1832014027211209/18/14 Combinatorial methods and systems for developing electrochromic materials and devices
1842014027330009/18/14 Method for forming reram chips operating at low operating temperatures
1852014027330909/18/14 Controlling radical lifetimes in a remote plasma chamber
1862014027331109/18/14 Optical absorbers
1872014027331409/18/14 High productivity combinatorial workflow to screen and design chalcogenide materials as non volatile memory current selector
1882014027334009/18/14 High productivity combinatorial screening for stable metal oxide tfts
1892014027334109/18/14 Methods for forming back-channel-etch devices with copper-based electrodes
1902014027340409/18/14 Advanced targeted microwave degas system
1912014027342709/18/14 Electrode for low-leakage devices
1922014027349309/18/14 Hydrogen plasma cleaning of germanium oxide surfaces
1932014027352509/18/14 Atomic layer deposition of reduced-leakage post-transition metal oxide films
1942014025611109/11/14 Nonvolatile memory elements
1952014025256509/11/14 Nucleation interface for high-k layer on germanium
1962014024664009/04/14 Doped electrodes used to inhibit oxygen loss in reram device
1972014024764909/04/14 Bipolar resistive-switching memory with a single diode per memory cell
1982014023174408/21/14 Methods for forming resistive switching memory elements
1992014023095508/21/14 Systems for discretized processing of regions of a substrate
2002014023170408/21/14 Silicon texturing formulations
2012014022505608/14/14 Resistive-switching memory elements having improved switching characteristics
2022014022787108/14/14 Formation of a masking layer on a dielectric region to facilitate formation of a capping layer on electrically conductive regions separated by the dielectric region
2032014022788008/14/14 Combinatorial plasma enhanced deposition and etchtechniques
2042014019126207/10/14 Material with tunable index of refraction
2052014019136507/10/14 Device design for partially oriented rutile dielectrics
2062014018267007/03/14 Light trapping and antireflective coatings
2072014018369607/03/14 Methods to improve leakage for zro2 based high k mim capacitor
2082014018503407/03/14 Method to extend single wavelength ellipsometer to obtain spectra of refractive index
2092014018659807/03/14 Base-layer consisting of two materials layer with extreme high/low index in low-e coating to improve the neutral color and transmittance performance
2102014018699507/03/14 Method of fabricating cigs solar cells with high band gap by sequential processing
2112014018704107/03/14 High dose ion-implanted photoresist removal using organic solvent and transition metal mixtures
2122014018705107/03/14 Poly removal for replacement gate with an apm mixture
2132014018705207/03/14 Selective etching of hafnium oxide using diluted hydrofluoric acid
2142014018266507/03/14 Optical absorbers
2152014018303607/03/14 In situ sputtering target measurement
2162014018316107/03/14 Methods and systems for site-isolated combinatorial substrate processing using a mask
2172014018343207/03/14 Moox-based resistance switching materials
2182014018343907/03/14 Current selector for non-volatile memory in a cross bar array based on defect and band engineering metal-dielectric-metal stacks
2192014018366407/03/14 Fullerene-based capacitor electrode
2202014018366607/03/14 Flourine-stabilized interface
2212014018369507/03/14 Methods for reproducible flash layer deposition
2222014018369707/03/14 High work function, manufacturable top electrode
2232014018373707/03/14 Diffusion barriers
2242014018535707/03/14 Barrier design for steering elements
2252014018661707/03/14 Low-emissivity coatings
2262014018701507/03/14 Methods to improve leakage for zro2 based high k mim capacitor
2272014018701607/03/14 High work function, manufacturable top electrode
2282014018701807/03/14 Methods for reproducible flash layer deposition
2292014018826407/03/14 Workflow manager and bar coding system for processing of samples/substrates in hpc (high productivity combinatorial) r&d environment
2302014017535906/26/14 Diffusion barrier layer for resistive random access memory cells
2312014017561806/26/14 Transition metal aluminate and high k dielectric semiconductor stack
2322014017704206/26/14 Novel silver barrier materials for low-emissivity applications
2332014017865706/26/14 Antireflection coatings
2342014017908206/26/14 Selective etching of hafnium oxide using non-aqueous solutions
2352014017910706/26/14 Etching silicon nitride using dilute hydrofluoric acid
2362014017911206/26/14 High productivity combinatorial techniques for titanium nitride etching
2372014017448106/26/14 Processing and cleaning substrates
2382014017454006/26/14 Ald process window combinatorial screening tool
2392014017465606/26/14 Method to improve the operational robustness and safety of combinatorial processing systems
2402014017490706/26/14 High deposition rate chamber with co-sputtering capabilities
2412014017491006/26/14 Sputter gun shield
2422014017491106/26/14 Methods and systems for reducing particles during physical vapor deposition
2432014017491806/26/14 Sputter gun
2442014017492106/26/14 Multi-piece target and magnetron to prevent sputtering of target backing materials
2452014017542206/26/14 Deposition of rutile films with very high dielectric constant
2462014017556706/26/14 Method of depositing films with narrow-band conductive properties
2472014017560306/26/14 Method of forming an asymmetric mimcap or a schottky device as a selector element for a cross-bar memory array
2482014017560406/26/14 Two step deposition of molybdenum dioxide electrode for high quality dielectric stacks
2492014017737806/26/14 High dilution ratio by successively preparing and diluting chemicals



ARCHIVE: New 2015 2014 2013 2012 2011 2010 2009



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