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Intermolecular Inc
Intermolecular Inc_20131212


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Intermolecular, Inc. patents

Recent patent applications related to Intermolecular, Inc.. Intermolecular, Inc. is listed as an Agent/Assignee. Note: Intermolecular, Inc. may have other listings under different names/spellings. We're not affiliated with Intermolecular, Inc., we're just tracking patents.

ARCHIVE: New 2015 2014 2013 2012 2011 2010 2009 | Company Directory "I" | Intermolecular, Inc.-related inventors

Search recent Press Releases: Intermolecular, Inc.-related press releases
Count Application # Date Intermolecular, Inc. patents (updated weekly) - BOOKMARK this page
12015005391002/26/15 new patent  Multistate nonvolatile memory elements
22015005674802/26/15 new patent  Methods for forming resistive switching memory elements by heating deposited layers
32015005674902/26/15 new patent  Atomic layer deposition of metal oxide materials for memory applications
42015005672302/26/15 new patent  Processing substrates using site-isolated processing
52015005678002/26/15 new patent  Full wafer processing by multiple passes through a combinatorial reactor
62015004191202/12/15Gate stacks including taxsiyo for mosfets
72015003489602/05/15Resistive-switching nonvolatile memory elements
82015003489802/05/15Confined defect profiling within resistive random memory access cells
92015003508502/05/15Doped high-k dielectrics and methods for forming the same
102015003795902/05/15Bipolar multistate nonvolatile memory
112015003114801/29/15Shadow mask for patterned deposition on substrates
122015002177201/22/15Mixed-metal barrier films optimized by high-productivity combinatorial pvd
132015002418201/22/15Antireflective coatings with self-cleaning, moisture resistance and antimicrobial properties
142015002177401/22/15Molecular self-assembly in substrate processing
152015002567001/22/15Substrate processing including correction for deposition location
162015001617801/15/15All around electrode for novel 3d rram applications
172015001745601/15/15Reducing voids caused by trapped acid on a dielectric surface
182015001778001/15/15Nonvolatile resistive memory element with an integrated oxygen isolation structure
192015001781501/15/15Combinatorial non-contact wet processing
202015000838601/08/15Morphology control of ultra-thin meox layer
212015001070501/08/15Methods for forming templated materials
222015000155501/01/15Methods for coating a substrate with an amphiphilic compound
232015000167601/01/15Method of forming an asymmetric mimcap or a schottky device as a selector element for a cross-bar memory array
242014037424012/25/14Multifunctional electrode
252014037793112/25/14Metal aluminum nitride embedded resistors for resistive random memory access cells
262014037064612/18/14Absorber layer for a thin film photovoltaic device with a double-graded band gap
272014032250710/30/14Systems, methods, and production coatings of low-emissivity glass
282014032288410/30/14Nonvolatile resistive memory element with a silicon-based switching layer
292014031533110/23/14Screening of surface passivation processes for germanium channels
302014030852810/16/14Systems, methods, and production coatings of low-emissivity glass
312014030267110/09/14Selective etching of copper and copper-barrier materials by an aqueous base solution with fluoride addition
322014026166009/18/14Tcos for heterojunction solar cells
332014026415509/18/14High-selectivity wet patterning of source-drain electrodes over taos for a bce device structure
342014026423909/18/14Using multi-layer mimcaps in the tunneling regime as selector element for a cross-bar memory array
352014026830109/18/14Low-emissivity panels including magnetic layers
362014026831609/18/14Systems, methods, and production coatings of low-emissivity glass including a ternary alloy
372014026831709/18/14High solar gain low-e panel and forming the same
382014026834809/18/14Anti-reflective coatings with porosity gradient and methods for forming the same
392014026834909/18/14Optical coatings with plate-shaped particles and methods for forming the same
402014026899309/18/14Nonvolatile resistive memory element with an oxygen-gettering layer
412014027212709/18/14Anti-glare coatings with sacrificial surface roughening agents and methods for forming the same
422014027229009/18/14Polymer anti-glare coatings and methods for forming the same
432014027233509/18/14Low-e glazing performance by seed structure optimization
442014027235309/18/14Color shift of high lsg low emissivity coating after heat treatment
452014027235409/18/14Method to generate high lsg low-emissivity coating with same color after heat treatment
462014027238409/18/14Anti-reflection coatings with aqueous particle dispersions and methods for forming the same
472014027238709/18/14Anti-glare coatings with aqueous particle dispersions and methods for forming the same
482014027239009/18/14Low-e panel with improved barrier layer process window and forming the same
492014027239509/18/14Low-emissivity glass including spacer layers compatible with heat treatment
502014027245409/18/14Barrier layers for silver reflective coatings and hpc workflows for rapid screening of materials for such barrier layers
512014027245509/18/14Titanium nickel niobium alloy barrier for low-emissivity coatings
522014027333309/18/14Methods for fabricating znose alloys
532014027346709/18/14Polycrystalline-silicon etch with low-peroxide apm
542014027349709/18/14Wet processing systems and methods with replenishment
552014026202809/18/14Non-contact wet-process cell confining liquid to a region of a solid surface by differential pressure
562014026274909/18/14Methods of plasma surface treatment in a pvd chamber
572014026422409/18/14Performance enhancement of forming-free reram devices using 3d nanoparticles
582014026424109/18/14Znte on tin or pt electrodes as a resistive switching element for reram applications
592014026425209/18/14Current selector for non-volatile memory in a cross bar array based on defect and band engineering metal-dielectric-metal stacks
602014026428109/18/14Channel-last methods for making fets
612014026432009/18/14Compositional graded igzo thin film transistor
622014026432109/18/14Method of fabricating igzo by sputtering in oxidizing gas
632014026449209/18/14Counter-doped low-power finfet
642014026450709/18/14Fluorine passivation in cmos image sensors
652014026463409/18/14Finfet for rf and analog integrated circuits
662014026470809/18/14Optical absorbers
672014026474709/18/14Deposition of anisotropic dielectric layers orientationally matched to the physically separated substrate
682014026482509/18/14Ultra-low resistivity contacts
692014026487109/18/14Method to increase interconnect reliability
702014026837709/18/14Ultrathin coating for one way mirror applications
712014026900409/18/14Method for improving data retention of reram chips operating at low operating temperatures
722014027211209/18/14Combinatorial methods and systems for developing electrochromic materials and devices
732014027330009/18/14Method for forming reram chips operating at low operating temperatures
742014027330909/18/14Controlling radical lifetimes in a remote plasma chamber
752014027331109/18/14Optical absorbers
762014027331409/18/14High productivity combinatorial workflow to screen and design chalcogenide materials as non volatile memory current selector
772014027334009/18/14High productivity combinatorial screening for stable metal oxide tfts
782014027334109/18/14Methods for forming back-channel-etch devices with copper-based electrodes
792014027340409/18/14Advanced targeted microwave degas system
802014027342709/18/14Electrode for low-leakage devices
812014027349309/18/14Hydrogen plasma cleaning of germanium oxide surfaces
822014027352509/18/14Atomic layer deposition of reduced-leakage post-transition metal oxide films
832014025611109/11/14Nonvolatile memory elements
842014025256509/11/14Nucleation interface for high-k layer on germanium
852014024664009/04/14Doped electrodes used to inhibit oxygen loss in reram device
862014024764909/04/14Bipolar resistive-switching memory with a single diode per memory cell
872014023174408/21/14Methods for forming resistive switching memory elements
882014023095508/21/14Systems for discretized processing of regions of a substrate
892014023170408/21/14Silicon texturing formulations
902014022505608/14/14Resistive-switching memory elements having improved switching characteristics
912014022787108/14/14Formation of a masking layer on a dielectric region to facilitate formation of a capping layer on electrically conductive regions separated by the dielectric region
922014022788008/14/14Combinatorial plasma enhanced deposition and etchtechniques
932014019126207/10/14Material with tunable index of refraction
942014019136507/10/14Device design for partially oriented rutile dielectrics
952014018267007/03/14Light trapping and antireflective coatings
962014018369607/03/14Methods to improve leakage for zro2 based high k mim capacitor
972014018503407/03/14Method to extend single wavelength ellipsometer to obtain spectra of refractive index
982014018659807/03/14Base-layer consisting of two materials layer with extreme high/low index in low-e coating to improve the neutral color and transmittance performance
992014018699507/03/14Method of fabricating cigs solar cells with high band gap by sequential processing
1002014018704107/03/14High dose ion-implanted photoresist removal using organic solvent and transition metal mixtures
1012014018705107/03/14Poly removal for replacement gate with an apm mixture
1022014018705207/03/14Selective etching of hafnium oxide using diluted hydrofluoric acid
1032014018266507/03/14Optical absorbers
1042014018303607/03/14In situ sputtering target measurement
1052014018316107/03/14Methods and systems for site-isolated combinatorial substrate processing using a mask
1062014018343207/03/14Moox-based resistance switching materials
1072014018343907/03/14Current selector for non-volatile memory in a cross bar array based on defect and band engineering metal-dielectric-metal stacks
1082014018366407/03/14Fullerene-based capacitor electrode
1092014018366607/03/14Flourine-stabilized interface
1102014018369507/03/14Methods for reproducible flash layer deposition
1112014018369707/03/14High work function, manufacturable top electrode
1122014018373707/03/14Diffusion barriers
1132014018535707/03/14Barrier design for steering elements
1142014018661707/03/14Low-emissivity coatings
1152014018701507/03/14Methods to improve leakage for zro2 based high k mim capacitor
1162014018701607/03/14High work function, manufacturable top electrode
1172014018701807/03/14Methods for reproducible flash layer deposition
1182014018826407/03/14Workflow manager and bar coding system for processing of samples/substrates in hpc (high productivity combinatorial) r&d environment
1192014017535906/26/14Diffusion barrier layer for resistive random access memory cells
1202014017561806/26/14Transition metal aluminate and high k dielectric semiconductor stack
1212014017704206/26/14Novel silver barrier materials for low-emissivity applications
1222014017865706/26/14Antireflection coatings
1232014017908206/26/14Selective etching of hafnium oxide using non-aqueous solutions
1242014017910706/26/14Etching silicon nitride using dilute hydrofluoric acid
1252014017911206/26/14High productivity combinatorial techniques for titanium nitride etching
1262014017448106/26/14Processing and cleaning substrates
1272014017454006/26/14Ald process window combinatorial screening tool
1282014017465606/26/14Method to improve the operational robustness and safety of combinatorial processing systems
1292014017490706/26/14High deposition rate chamber with co-sputtering capabilities
1302014017491006/26/14Sputter gun shield
1312014017491106/26/14Methods and systems for reducing particles during physical vapor deposition
1322014017491806/26/14Sputter gun
1332014017492106/26/14Multi-piece target and magnetron to prevent sputtering of target backing materials
1342014017542206/26/14Deposition of rutile films with very high dielectric constant
1352014017556706/26/14Method of depositing films with narrow-band conductive properties
1362014017560306/26/14Method of forming an asymmetric mimcap or a schottky device as a selector element for a cross-bar memory array
1372014017560406/26/14Two step deposition of molybdenum dioxide electrode for high quality dielectric stacks
1382014017737806/26/14High dilution ratio by successively preparing and diluting chemicals
1392014017857806/26/14Barrier layers for silver reflective coatings and hpc workflows for rapid screening of materials for such barrier layers
1402014017858306/26/14Combinatorial methods and systems for developing thermochromic materials and devices
1412014017903006/26/14Dissolution rate monitor
1422014017903306/26/14Methods for forming templated materials
1432014017909506/26/14Methods and systems for controlling gate dielectric interfaces of mosfets
1442014017910006/26/14Method to control depth profiles of dopants using a remote plasma source
1452014017911306/26/14Surface treatment methods and systems for substrate processing
1462014017912306/26/14Site-isolated rapid thermal processing methods and apparatus
1472014016647206/19/14Method and temperature control to improve low emissivity coatings
1482014016875906/19/14Methods and apparatuses for patterned low emissivity panels
1492014017030806/19/14Antireflective coatings with gradation and methods for forming the same
1502014017033806/19/14Pvd chamber and process for over-coating layer to improve emissivity for low emissivity coating
1512014017041306/19/14Silver based conductive layer for flexible electronics
1522014017042106/19/14Low-e panel with improved barrier layer and forming the same
1532014017042206/19/14Low emissivity coating with optimal base layer material and layer stack
1542014017043406/19/14Two layer ag process for low emissivity coatings
1552014016605006/19/14Chuck for mounting a semiconductor wafer for liquid immersion processing
1562014016610706/19/14Back-contact electron reflectors enhancing thin film solar cell efficiency
1572014016613406/19/14Pump with reduced number of moving parts
1582014016661606/19/14Combinatorial processing using a remote plasma source
1592014016684006/19/14Substrate carrier
1602014016695806/19/14Controlling reram forming voltage with doping
1612014016722106/19/14Methods to improve leakage of high k materials
1622014016722306/19/14Semiconductor cooling device
1632014016906206/19/14Methods of manufacturing embedded bipolar switching resistive memory
1642014017004906/19/14Low refractive index material by sputtering deposition method
1652014017033506/19/14Methods and combinatorial pecvd or peald
1662014017077506/19/14Hpc workflow for rapid screening of materials and stacks for stt-ram
1672014017080206/19/14Absorber layer for a thin film photovoltaic device with a double-graded band gap
1682014017080306/19/14Cigs absorber formed by co-sputtered indium
1692014017080606/19/14Tcos for high-efficiency crystalline si heterojunction solar cells
1702014017083306/19/14Methods to improve leakage of high k materials
1712014017085706/19/14Customizing etch selectivity with sequential multi-stage etches with complementary etchants
1722014016238406/12/14Pvd-ald-cvd hybrid hpc for work function material screening
1732014015819006/12/14Absorbers for high efficiency thin-film pv
1742014015912006/12/14Conformal doping
1752014016198906/12/14Anti-glare using a two-step texturing process
1762014016199006/12/14Anti-glare glass/substrate via novel specific combinations of dry and wet processes
1772014016239706/12/14High-efficiency thin-film photovoltaics with controlled homogeneity and defects
1782014015162606/05/14Selector device using low leakage dielectric mimcap diode
1792014015485906/05/14Methods and vehicles for high productivity combinatorial testing of materials for resistive random access memory cells
1802014015024506/05/14Pneumatic clamping mechanism for cells with adjustable height
1812014014759405/29/14Magnesium fluoride and magnesium oxyfluoride based anti-reflection coatings via chemical solution deposition processes
1822014014447105/29/14Contamination control, rinsing, and purging methods to extend the life of components within combinatorial processing systems
1832014014451205/29/14Methods and systems for dispensing different liquids for high productivity combinatorial processing
1842014014477105/29/14Cooling efficiency fluid cooled sputter guns
1852014014735005/29/14Cleaner for reactor component cleaning
1862014014758705/29/14Combinatorial spin deposition
1872014014759305/29/14Liquid cooled sputter apertured shields
1882014014153405/22/14Dielectric doping using high productivity combinatorial methods
1892014013860205/22/14Controlled localized defect paths for resistive memories
1902014013484905/15/14Combinatorial site isolated plasma assisted deposition
1912014013092205/15/14Control methods and hardware configurations for ozone delivery systems
1922014013326505/15/14Contactless magnetically driven agitation systems
1932014012403805/08/14Reactor cell isolation using differential pressure in a combinatorial reactor
1942014012435905/08/14New magnet design which improves erosion profile for pvd systems
1952014012472505/08/14Resistive random access memory cells having doped current limiting layers
1962014012478805/08/14Chemical vapor deposition system
1972014012481705/08/14Contact layers
1982014012742205/08/14Method and high-k gate performance improvement and combinatorial processing
1992014012788705/08/14Chemical vapor deposition system
2002014012797405/08/14Combinatorial tool for mechanically-assisted surface polishing and cleaning
2012014011076404/24/14Method to control amorphous oxide layer formation at interfaces of thin film stacks for memory and logic components
2022014011340304/24/14High efficiency cztse by a two-step approach
2032014011081304/24/14Absorbers for high efficiency thin-film pv
2042014010328204/17/14Diffusion barrier layer for resistive random access memory cells
2052014010328404/17/14Reram cells including taxsiyn embedded resistors
2062014010248804/17/14Method and system for improving performance and preventing corrosion in multi-module cleaning chamber
2072014010656104/17/14Graphene barrier layers for interconnects and methods for forming the same
2082014010903004/17/14Method of determining electromigration (em) lifetimes and lifetime criteria
2092014009978504/10/14Sacrificial low work function cap layer
2102014009059604/03/14Methods of combinatorial processing for screening multiple samples on a semiconductor substrate
2112014009066804/03/14In-situ cleaning assembly
2122014009246204/03/14Electrochromic device with improved transparent conductor and forming the same
2132014009403704/03/14Method and preventing native oxide regrowth
2142014008423603/27/14Ald processing techniques for forming non-volatile resistive switching memories
2152014008494803/27/14Test vehicles for evaluating resistance of thin layers
2162014008749003/27/14Method and improving particle performance
2172014007714703/20/14Methods for selective etching of a multi-layer substrate
2182014007733603/20/14Leakage reduction in dram mim capacitors
2192014007733703/20/14High temperature ald process for metal oxide for dram applications
2202014007880803/20/14Embedded nonvolatile memory elements having resistive switching characteristics
2212014008023303/20/14Combinatorial optimization of interlayer parameters
2222014008025003/20/14Method of fabricating high efficiency cigs solar cells
2232014008028203/20/14Leakage reduction in dram mim capacitors
2242014008028403/20/14High temperature ald process of metal oxide for dram applications
2252014008032203/20/14Emissivity profile control for thermal uniformity
2262014007310703/13/14Atomic layer deposition of metal oxide materials for memory applications
2272014007021303/13/14Methods for discretized processing and process sequence integration of regions of a substrate
2282014007143503/13/14High throughput quantum efficiency combinatorial characterization tool and combinatorial solar test substrates
2292014006578803/06/14Combinatorial approach for screening of ald film stacks
2302014006579903/06/14Methods and systems for low resistance contact formation
2312014006581903/06/14Methods and systems for low resistance contact formation
2322014005737102/27/14High productivity combinatorial workflow for post gate etch clean development
2332014005453102/27/14Defect enhancement of a switching layer in a nonvolatile resistive memory element
2342014005515202/27/14Circular transmission line methods compatible with combinatorial processing of semiconductors
2352014005121002/20/14Nonvolatile memory elements
2362014004801302/20/14Seed layer for zno and doped-zno thin film nucleation and methods of seed layer deposition
2372014005091402/20/14Antireflective coatings with controllable porosity and refractive index properties using a combination of thermal or chemical treatments
2382014004238402/13/14Resistive-switching nonvolatile memory elements
2392014004172202/13/14Method of fabricating high efficiency cigs solar cells
2402014003835202/06/14Non-volatile resistive-switching memories
2412014003838002/06/14Multifunctional electrode
2422014003495702/06/14Index-matched insulators
2432014003784102/06/14Antireflective coatings with controllable porosity and durability properties using controlled exposure to alkaline vapor
2442014003885502/06/14High pressure parallel fixed bed reactor and method
2452014003088701/30/14Sputtering and aligning multiple layers having different boundaries
2462014001468101/16/14Calibration of a chemical dispense system
2472014001489201/16/14Resistive-switching memory element
2482014000793801/09/14Laser annealing for thin film solar cells
2492014000876301/09/14Distributed substrate top contact for moscap measurements

ARCHIVE: New 2015 2014 2013 2012 2011 2010 2009


This listing is an abstract for educational and research purposes is only meant as a recent sample of applications filed, not a comprehensive history. is not affiliated or associated with Intermolecular, Inc. in any way and there may be associated servicemarks. This data is also published to the public by the USPTO and available for free on their website. Note that there may be alternative spellings for Intermolecular, Inc. with additional patents listed. Browse our Agent directory for other possible listings. Page by