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Intermolecular Inc patents


      
Recent patent applications related to Intermolecular Inc. Intermolecular Inc is listed as an Agent/Assignee. Note: Intermolecular Inc may have other listings under different names/spellings. We're not affiliated with Intermolecular Inc, we're just tracking patents.

ARCHIVE: New 2016 2015 2014 2013 2012 2011 2010 2009 | Company Directory "I" | Intermolecular Inc-related inventors




Search recent Press Releases: Intermolecular Inc-related press releases
Count Application # Date Intermolecular Inc patents (updated weekly) - BOOKMARK this page
12016014913005/26/16  new patent  Two stage forming of resistive random access memory cells
22016014897605/26/16  new patent  Simultaneous carbon and nitrogen doping of si in msm stack as a selector device for non-volatile memory application
32016014912805/26/16  new patent  Diamond like carbon (dlc) as a thermal sink in a selector stack for non-volatile memory application
42016014912905/26/16  new patent  Using metal silicides as electrodes for msm stack in selector for non-volatile memory application
52016014133505/19/16 Diamond like carbon (dlc) in a semiconductor stack as a selector for non-volatile memory application
62016013383705/12/16 Low-temperature deposition of metal silicon nitrides from silicon halide precursors
72016013369105/12/16 Dram mimcap stack with moo2 electrode
82016013381905/12/16 Fluorine containing low loss dielectric layers for superconducting circuits
92016012223505/05/16 Low-e panels and methods of forming the same
102016011830904/28/16 Minimal contact wet processing systems and methods
112016011844004/28/16 Photo-induced msm stack
122016011130204/21/16 Systems and methods for wet processing substrates with rotating splash shield
132016011147104/21/16 Sic-si3n4 nanolaminates as a semiconductor for msm snapback selector devices
142016011160304/21/16 Indium zinc oxide for transparent conductive oxide layer and methods of forming thereof
152016010201304/14/16 Low-e panels and methods for forming the same
162016009794504/07/16 Transparent resistive random access memory cells
172016009930304/07/16 Doped electrode for dram capacitor stack
182016009930404/07/16 Monx as a top electrode for tiox based dram applications
192016009946804/07/16 Solid-state batteries and methods for forming the same
202016009948204/07/16 Solid-state batteries with improved electrode conductivity and methods for forming the same
212016009371103/31/16 Tantalum carbide metal gate stack for mid-gap work function applications
222016009362503/31/16 Method to improve dram performance
232016009377203/31/16 Methods for reducing interface contact resistivity
242016004299102/11/16 Molecular self-assembly in substrate processing
252016003563102/04/16 Atomic layer deposition of hfalc as a metal gate workfunction material in mos devices
262016002800301/28/16 Shaping reram conductive filaments by controlling grain-boundary density
272016002800801/28/16 Reram cells with diffusion-resistant metal silicon oxide layers
282016002038801/21/16 Resistive switching by breaking and re-forming covalent bonds
292016002039201/21/16 Current-limiting electrodes
302016001336701/14/16 Oxides with thin metallic layers as transparent ohmic contacts for p-type and n-type gallium nitride
312015038030912/31/15 Metal-insulator-semiconductor (mis) contact with controlled defect density
322015036815212/24/15 Low-e panels and methods for forming the same
332015037187212/24/15 Solution based etching of titanium carbide and titanium nitride structures
342015036247312/17/15 Low-e panels utilizing high-entropy alloys and combinatorial methods and systems for developing the same
352015034500512/03/15 Seed layer for low-e applications
362015034883312/03/15 Method to etch cu/ta/tan selectively using dilute aqueous hf/hcl solution
372015033743211/26/15 Barrier layers for silver reflective coatings and hpc workflows for rapid screening of materials for such barrier layers
382015033836211/26/15 Combinatorial screening of metallic diffusion barriers
392015032578811/12/15 Embedded nonvolatile memory elements having resistive switching characteristics
402015032736611/12/15 Silver based conductive layer for flexible electronics
412015031844611/05/15 Low-temperature fabrication of transparent conductive contacts for p-gan and n-gan
422015031091010/29/15 Multi-level memory array having resistive elements for multi-bit data storage
432015031125710/29/15 Resistive random access memory cells having shared electrodes with transistor devices
442015031139710/29/15 Zinc stannate ohmic contacts for p-type gallium nitride
452015031304610/29/15 Superconducting circuits with reduced microwave absorption
462015030305710/22/15 Methods for fabricating integrated circuits including fluorine incorporation
472015029181210/15/15 Low emissivity glass incorporating phosphorescent rare earth compounds
482015029181210/15/15 Low emissivity glass incorporating phosphorescent rare earth compounds
492015028761610/08/15 Methods for discretized processing and process sequence integration of regions of a substrate
502015027967010/01/15 Novel method to grow in-situ crystalline igzo
512015027967410/01/15 Caac igzo deposited at room temperature
522015026266309/17/15 Methods of manufacturing embedded bipolar switching resistive memory
532015025534009/10/15 Method to etch cu/ta/tan selectively using dilute aqueous hf/hcl solution
542015025571609/10/15 Non-volatile resistive-switching memories
552015025533209/10/15 Ultra-low resistivity contacts
562015023237608/20/15 Low-e glazing performance by seed structure optimization
572015023237808/20/15 Low-e panels with ternary metal oxide dielectric layer and forming the same
582015023626008/20/15 Creating an embedded reram memory from a high-k metal gate transistor structure
592015023587508/20/15 Modular flow cell and adjustment system
602015022859508/13/15 Methods for etching copper during the fabrication of integrated circuits
612015022871008/13/15 Methods to improve electrical performance of zro2 based high-k dielectric materials for dram applications
622015020036107/16/15 Transition metal oxide bilayers
632015019181507/09/15 Titanium nickel niobium alloy barrier for low-emissivity coatings
642015019196507/09/15 Low-e panels and methods for forming the same
652015018428307/02/15 Ternary metal nitride formation by annealing constituent layers
662015018517007/02/15 X-ray fluorescence analysis of thin-film coverage defects
672015018757407/02/15 Igzo with intra-layer variations and methods for forming the same
682015018759607/02/15 Wet etching of silicon containing antireflective coatings
692015018766407/02/15 High productivity combinatorial testing of multiple work function materials on the same semiconductor substrate
702015018784107/02/15 Method of forming current-programmable inline resistor
712015018795607/02/15 Igzo devices with increased drive current and methods for forming the same
722015018795807/02/15 Igzo devices with reduced electrode contact resistivity and methods for forming the same
732015018803907/02/15 Embedded resistors with oxygen gettering layers
742015018804307/02/15 Embedded resistors for resistive random access memory cells
752015018804407/02/15 Embedded resistors for resistive random access memory cells
762015018804507/02/15 Stacked bi-layer as the low power switchable rram
772015018804607/02/15 Methods, systems, and improving thin film resistor reliability
782015018804807/02/15 Diffusion barrier layer for resistive random access memory cells
792015018849207/02/15 Voltage controlling assemblies including variable resistance devices
802015018428607/02/15 Hydrogenated amorphous silicon dielectric for superconducting devices
812015018428707/02/15 Systems and methods for parallel combinatorial vapor deposition processing
822015018429807/02/15 Methods and combinatorial pecvd or peald
832015018786507/02/15 Capacitors including inner and outer electrodes
842015018798207/02/15 Zinc blende cadmium-manganese-telluride with reduced hole compensation effects and methods for forming the same
852015017612206/25/15 Low-temperature growth of complex compound films
862015017758306/25/15 Systems, methods, and integrated glass units having adjustable solar heat gains
872015017931606/25/15 Methods of forming nitrides at low substrate temperatures
882015017943606/25/15 Plasma densification of dielectrics for improved dielectric loss tangent
892015017944206/25/15 Methods for forming crystalline igzo with a seed layer
902015017950806/25/15 Tantalum-based copper barriers and methods for forming the same
912015017983906/25/15 Contact layers for photovoltaic devices
922015017991406/25/15 Annealed dielectrics and heat-tolerant conductors for superconducting electronics
932015017991706/25/15 Atomic layer deposition of metal-oxide tunnel barriers using optimized oxidants
942015017991806/25/15 Plasma cleaning of superconducting layers
952015017993006/25/15 Schottky barriers for resistive random access memory cells
962015017993506/25/15 Atomic layer deposition of metal oxides for memory applications
972015017993706/25/15 Metal organic chemical vapor deposition of embedded resistors for reram cells
982015017611706/25/15 Interchangeable sputter gun head
992015017612406/25/15 Methods for rapid generation of ald saturation curves using segmented spatial ald
1002015017731106/25/15 Methods and systems for evaluating igzo with respect to nbis
1012015017758506/25/15 Systems, methods, and integrated glass units having adjustable transmissivities
1022015017943806/25/15 Gate stacks and ohmic contacts for sic devices
1032015017944406/25/15 Methods for forming crystalline igzo through power supply mode optimization
1042015017944606/25/15 Methods for forming crystalline igzo through processing condition optimization
1052015017944806/25/15 Methods for forming crystalline igzo through annealing
1062015017948706/25/15 Multipurpose combinatorial vapor phase deposition chamber
1072015017950006/25/15 Formation of a masking layer on a dielectric region to facilitate formation of a capping layer on electrically conductive regions separated by the dielectric region
1082015017950906/25/15 Plasma treatment of low-k surface to improve barrier deposition
1092015017968306/25/15 High productivity combinatorial material screening for metal oxide films
1102015017968406/25/15 High productivity combinatorial material screening for stable, high-mobility non-silicon thin film transistors
1112015017973006/25/15 Zro-based high k dielectric stack for logic decoupling capacitor or embedded dram
1122015017974306/25/15 Graphene as a ge surface passivation layer to control metal-semiconductor junction resistivity
1132015017977306/25/15 Igzo devices with reduced threshhold voltage shift and methods for forming the same
1142015017981506/25/15 Quantum well igzo devices and methods for forming the same
1152015017991306/25/15 Fluorine passivation of dielectric for superconducting electronics
1162015017991506/25/15 Fluorine passivation during deposition of dielectrics for superconducting electronics
1172015017991606/25/15 Catalytic growth of josephson junction tunnel barrier
1182015017993306/25/15 Tiox based selector element
1192015017993406/25/15 Zrox/sto/zrox based selector element
1202015016679506/18/15 Anti-glare coatings with ultraviolet-absorbing particles and methods for forming the same
1212015017076006/18/15 Resistive switching sample and hold
1222015017090806/18/15 One-way valves for controlling flow into deposition chamber
1232015017126006/18/15 Low resistivity nitrogen-doped zinc telluride and methods for forming the same
1242015017132306/18/15 Resistive random access memory cell having three or more resistive states
1252015017083706/18/15 Dielectric k value tuning of hah stack for improved tddb performance of logic decoupling capacitor or embedded dram
1262015017091206/18/15 Systems and methods for forming semiconductor devices
1272015017092306/18/15 Feature size reduction in semiconductor devices by selective wet etching
1282015017109506/18/15 Memory arrays for both good data retention and low power operation
1292015017122706/18/15 Igzo devices with composite channel layers and methods for forming the same
1302015015876206/11/15 Simplified protection layer for abrasion resistant glass coatings and methods for forming the same
1312015016252706/11/15 Morphology control of ultra-thin meox layer
1322015016253006/11/15 Nonvolatile memory device having a current limiting element
1332015016211106/11/15 Transparent conductive films and methods for forming the same
1342015015548506/04/15 Nonvolatile resistive memory element with an oxygen-gettering layer
1352015015536806/04/15 Amorphous silicon thin-film transistors with reduced electrode contact resistivity and methods for forming the same
1362015015548606/04/15 Resistive-switching memory elements having improved switching characteristics
1372015014634105/28/15 Ald dielectric films with leakage-reducing impurity layers
1382015014406105/28/15 Combinatorial plasma enhanced deposition techniques
1392015014786505/28/15 Resistive-switching memory elements having improved switching characteristics
1402015014786605/28/15 Resistive-switching memory element
1412015013706205/21/15 Mimcaps with quantum wells as selector elements for crossbar memory arrays
1422015013706405/21/15 Reduction of forming voltage in semiconductor devices
1432015014077205/21/15 Method for fabricating a bipolar transistor having self-aligned emitter contact
1442015014083405/21/15 Al2o3 surface nucleation preparation with remote oxygen plasma
1452015014083805/21/15 Two step deposition of high-k gate dielectric materials
1462015013731505/21/15 Dram mim capacitor using non-noble electrodes
1472015014069605/21/15 Combinatorial solid source doping process development
1482015014077905/21/15 Selector device using low leakage dielectric mimcap diode
1492015014083605/21/15 Methods to control sio2 etching during fluorine doping of si/sio2 interface
1502015012982605/14/15 Flexible non-volatile memory
1512015013006505/14/15 Method to etch cu/ta/tan selectively using dilute aqueous hf/h2so4 solution
1522015013295305/14/15 Etching of semiconductor structures that include titanium-based layers
1532015013293805/14/15 Methods and systems for forming reliable gate stack on semiconductors
1542015012307105/07/15 Method for forming metal oxides and silicides in a memory device
1552015011882804/30/15 Reduction of native oxides by annealing in reducing gas or plasma
1562015010456904/16/15 Barrier layers for silver reflective coatings and hpc workflows for rapid screening of materials for such barrier layers
1572015010530804/16/15 Aqua regia and hydrogen peroxide hcl combination to remove ni and nipt residues
1582015010168304/16/15 Touchless site isolation using gas bearing
1592015010436004/16/15 Combinatorial flow system and method
1602015009715304/09/15 Non-volatile resistive-switching memories
1612015009110504/02/15 Continuous tuning of erbium silicide metal gate effective work function via a pvd nanolaminate approach for mosfet applications
1622015009387604/02/15 Doped oxide dielectrics for resistive random access memory cells
1632015009103204/02/15 Nickel-titanium and related alloys as silver diffusion barriers
1642015009350004/02/15 Corrosion-resistant silver coatings with improved adhesion to iii-v materials
1652015009389804/02/15 Combinatorial process system
1662015008713003/26/15 Dram mim capacitor using non-noble electrodes
1672015007972703/19/15 Amorphous igzo devices and methods for forming the same
1682015006931903/12/15 Method of forming anneal-resistant embedded resistor for non-volatile memory application
1692015006075303/05/15 Controlling composition of multiple oxides in resistive switching layers using atomic layer deposition
1702015006091003/05/15 Conductive transparent reflector
1712015006436103/05/15 Uv treatment for ald film densification
1722015006487303/05/15 Controlling reram forming voltage with doping
1732015005391002/26/15 Multistate nonvolatile memory elements
1742015005674802/26/15 Methods for forming resistive switching memory elements by heating deposited layers
1752015005674902/26/15 Atomic layer deposition of metal oxide materials for memory applications
1762015005672302/26/15 Processing substrates using site-isolated processing
1772015005678002/26/15 Full wafer processing by multiple passes through a combinatorial reactor
1782015004191202/12/15 Gate stacks including taxsiyo for mosfets
1792015003489602/05/15 Resistive-switching nonvolatile memory elements
1802015003489802/05/15 Confined defect profiling within resistive random memory access cells
1812015003508502/05/15 Doped high-k dielectrics and methods for forming the same
1822015003795902/05/15 Bipolar multistate nonvolatile memory
1832015003114801/29/15 Shadow mask for patterned deposition on substrates
1842015002177201/22/15 Mixed-metal barrier films optimized by high-productivity combinatorial pvd
1852015002418201/22/15 Antireflective coatings with self-cleaning, moisture resistance and antimicrobial properties
1862015002177401/22/15 Molecular self-assembly in substrate processing
1872015002567001/22/15 Substrate processing including correction for deposition location
1882015001617801/15/15 All around electrode for novel 3d rram applications
1892015001745601/15/15 Reducing voids caused by trapped acid on a dielectric surface
1902015001778001/15/15 Nonvolatile resistive memory element with an integrated oxygen isolation structure
1912015001781501/15/15 Combinatorial non-contact wet processing
1922015000838601/08/15 Morphology control of ultra-thin meox layer
1932015001070501/08/15 Methods for forming templated materials
1942015000155501/01/15 Methods for coating a substrate with an amphiphilic compound
1952015000167601/01/15 Method of forming an asymmetric mimcap or a schottky device as a selector element for a cross-bar memory array
1962014037424012/25/14 Multifunctional electrode
1972014037793112/25/14 Metal aluminum nitride embedded resistors for resistive random memory access cells
1982014037064612/18/14 Absorber layer for a thin film photovoltaic device with a double-graded band gap
1992014032250710/30/14 Systems, methods, and production coatings of low-emissivity glass
2002014032288410/30/14 Nonvolatile resistive memory element with a silicon-based switching layer
2012014031533110/23/14 Screening of surface passivation processes for germanium channels
2022014030852810/16/14 Systems, methods, and production coatings of low-emissivity glass
2032014030267110/09/14 Selective etching of copper and copper-barrier materials by an aqueous base solution with fluoride addition
2042014026166009/18/14 Tcos for heterojunction solar cells
2052014026415509/18/14 High-selectivity wet patterning of source-drain electrodes over taos for a bce device structure
2062014026423909/18/14 Using multi-layer mimcaps in the tunneling regime as selector element for a cross-bar memory array
2072014026830109/18/14 Low-emissivity panels including magnetic layers
2082014026831609/18/14 Systems, methods, and production coatings of low-emissivity glass including a ternary alloy
2092014026831709/18/14 High solar gain low-e panel and forming the same
2102014026834809/18/14 Anti-reflective coatings with porosity gradient and methods for forming the same
2112014026834909/18/14 Optical coatings with plate-shaped particles and methods for forming the same
2122014026899309/18/14 Nonvolatile resistive memory element with an oxygen-gettering layer
2132014027212709/18/14 Anti-glare coatings with sacrificial surface roughening agents and methods for forming the same
2142014027229009/18/14 Polymer anti-glare coatings and methods for forming the same
2152014027233509/18/14 Low-e glazing performance by seed structure optimization
2162014027235309/18/14 Color shift of high lsg low emissivity coating after heat treatment
2172014027235409/18/14 Method to generate high lsg low-emissivity coating with same color after heat treatment
2182014027238409/18/14 Anti-reflection coatings with aqueous particle dispersions and methods for forming the same
2192014027238709/18/14 Anti-glare coatings with aqueous particle dispersions and methods for forming the same
2202014027239009/18/14 Low-e panel with improved barrier layer process window and forming the same
2212014027239509/18/14 Low-emissivity glass including spacer layers compatible with heat treatment
2222014027245409/18/14 Barrier layers for silver reflective coatings and hpc workflows for rapid screening of materials for such barrier layers
2232014027245509/18/14 Titanium nickel niobium alloy barrier for low-emissivity coatings
2242014027333309/18/14 Methods for fabricating znose alloys
2252014027346709/18/14 Polycrystalline-silicon etch with low-peroxide apm
2262014027349709/18/14 Wet processing systems and methods with replenishment
2272014026202809/18/14 Non-contact wet-process cell confining liquid to a region of a solid surface by differential pressure
2282014026274909/18/14 Methods of plasma surface treatment in a pvd chamber
2292014026422409/18/14 Performance enhancement of forming-free reram devices using 3d nanoparticles
2302014026424109/18/14 Znte on tin or pt electrodes as a resistive switching element for reram applications
2312014026425209/18/14 Current selector for non-volatile memory in a cross bar array based on defect and band engineering metal-dielectric-metal stacks
2322014026428109/18/14 Channel-last methods for making fets
2332014026432009/18/14 Compositional graded igzo thin film transistor
2342014026432109/18/14 Method of fabricating igzo by sputtering in oxidizing gas
2352014026449209/18/14 Counter-doped low-power finfet
2362014026450709/18/14 Fluorine passivation in cmos image sensors
2372014026463409/18/14 Finfet for rf and analog integrated circuits
2382014026470809/18/14 Optical absorbers
2392014026474709/18/14 Deposition of anisotropic dielectric layers orientationally matched to the physically separated substrate
2402014026482509/18/14 Ultra-low resistivity contacts
2412014026487109/18/14 Method to increase interconnect reliability
2422014026837709/18/14 Ultrathin coating for one way mirror applications
2432014026900409/18/14 Method for improving data retention of reram chips operating at low operating temperatures
2442014027211209/18/14 Combinatorial methods and systems for developing electrochromic materials and devices
2452014027330009/18/14 Method for forming reram chips operating at low operating temperatures
2462014027330909/18/14 Controlling radical lifetimes in a remote plasma chamber
2472014027331109/18/14 Optical absorbers
2482014027331409/18/14 High productivity combinatorial workflow to screen and design chalcogenide materials as non volatile memory current selector
2492014027334009/18/14 High productivity combinatorial screening for stable metal oxide tfts



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