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International Rectifier Corporation
International Rectifier Corporation el Segundo Ca
International Rectifier Corporation_20100107

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International Rectifier Corporation patents


Recent patent applications related to International Rectifier Corporation. International Rectifier Corporation is listed as an Agent/Assignee. Note: International Rectifier Corporation may have other listings under different names/spellings. We're not affiliated with International Rectifier Corporation, we're just tracking patents.

ARCHIVE: New 2016 2015 2014 2013 2012 2011 2010 2009 | Company Directory "I" | International Rectifier Corporation-related inventors




Date International Rectifier Corporation patents (updated weekly) - BOOKMARK this page
07/28/16Circuit implementations reducing losses in a power supply
06/02/16Circuit connectivity and conveyance of power status information
04/21/16Compact single-die power semiconductor package
04/21/16Compact multi-die power semiconductor package
04/14/16Power converter package with integrated output inductor
04/14/16Robust and reliable power semiconductor package
04/14/16Compact high-voltage semiconductor package
04/14/16Power semiconductor device with source trench and termination trench implants
04/14/16Semiconductor structure having integrated snubber resistance and related method
04/14/16Insertable power unit with mounting contacts for plugging into a mother board
04/14/16Power unit with conductive slats
03/24/16Fault and short-circuit protected output driver
03/03/16Methods and circuitry to provide common mode transient immunity
03/03/16Multi-level pulse generator circuitry
02/04/16Power supply control and current emulation
01/21/16Edge termination using guard rings between recessed field oxide regions
01/21/16Edge termination structure having a termination charge region below a recessed field oxide region
01/21/16Power converter utilizing a resonant half-bridge and charge pump circuit
01/14/16Semiconductor package with integrated semiconductor devices and passive component
01/14/16Passive component integrated with semiconductor device in semiconductor package
01/07/16Group iii-v transistor with voltage controlled substrate
01/07/16Group iii-v lateral transistor with backside contact
01/07/16Group iii-v transistor utilizing a substrate having a dielectrically-filled region
12/31/15Group iii-v device with a selectively modified impurity concentration
12/31/15Fabrication of iii-nitride power device with reduced gate to drain charge
12/24/15Composite group iii-v and group iv transistor having a switched substrate
12/24/15Group iii-v hemt having a selectably floating substrate
12/24/15Group iii-v hemt having a diode controlled substrate
12/10/15Fabrication of iii-nitride power semiconductor device
12/10/15Iii-nitride device with improved transconductance
12/03/15Power semiconductor package with multi-section conductive carrier
12/03/15Method for fabricating a semiconductor package with conductive carrier integrated heat spreader
12/03/15Semiconductor package with integrated heat spreader
11/26/15Power semiconductor package
11/26/15Group iii-v device including a shield plate
11/19/15Semiconductor package with multiple dies
11/19/15Enhancement mode iii-nitride transistor
11/12/15Composite device with integrated diode
11/12/15Power semiconductor device with low rdson and high breakdown voltage
10/29/15Semiconductor package with switch node integrated heat spreader
10/15/15Transistor with elevated drain termination
10/08/15Iii-nitride based semiconductor structure
10/01/15Power semiconductor package with a common conductive clip
10/01/15Power semiconductor device with embedded field electrodes
09/24/15Semiconductor package with integrated die paddles for power stage
09/24/15Semiconductor package with via-coupled power transistors
09/17/15Power semiconductor package with conductive clips
09/10/15Power semiconductor package
09/10/15Semiconductor package with conductive clip
09/10/15Electrical connectivity of die to a host substrate
08/20/15Compact power quad flat no-lead (pqfn) package
08/13/15Semiconductor package including a power stage and integrated output inductor
08/06/15Surface mountable power components
07/23/15System on chip with power switches
07/23/15Power converter with split voltage supply
07/09/15Semiconductor package with conductive clips
07/02/15Semiconductor structure with compositionally-graded transition layer
06/18/15High performance iii-nitride power device
06/11/15Power semiconductor package with integrated heat spreader and partially etched conductive carrier
06/11/15Power converter package with an integrated output inductor
06/11/15Array based fabrication of power semiconductor package with integrated heat spreader
06/11/15Composite power device with esd protection clamp
06/11/15Group iii-v voltage converter with monolithically integrated level shifter, high side driver, and high side power switch
06/04/15Enhancement mode iii-nitride switch
06/04/15Group iii-v transistor with semiconductor field plate
05/21/15Gallium nitride devices
05/14/15Semiconductor package with low profile switch node integrated heat spreader
05/14/15Iii-nitride semiconductor device fabrication
05/07/15Voltage converter with vcc-less rdson current sensing circuit
04/30/15Group iii-v device including a buffer termination body
04/30/15Adaptive off time control scheme for semi-resonant and hybrid converters
04/23/15Gallium nitride devices with discontinuously graded transition layer
04/09/15Integrated device including silicon and iii-nitride semiconductor devices
03/19/15Circuit and producing an average output inductor current indicator
02/26/15Level shifter utilizing a capacitive isolation barrier
02/05/15Wafer scale package for high power devices
02/05/15Fabrication of iii-nitride semiconductor device and related structures
01/22/15Iii-nitride semiconductor device with reduced electric field between gate and drain
01/15/15Integrated iii-nitride d-mode hfet with cascoded pair half bridge
01/15/15Iii-nitride semiconductor device with reduced electric field
01/15/15Iii-nitride device with solderable front metal
01/15/15Monolithic composite iii-nitride transistor with high voltage group iv enable switch
01/08/15Iii-nitride device and fet in a package
01/08/15Power semiconductor package with multiple dies
01/01/15Power semiconductor package with non-contiguous, multi-section conductive carrier
01/01/15Semiconductor device with reduced contact resistance
12/25/14Power semiconductor device with contiguous gate trenches and offset source trenches
12/25/14Depletion mode group iii-v transistor with high voltage group iv enable switch
12/18/14Monolithic integrated composite group iii-v and group iv semiconductor device and ic
12/04/14Gallium nitride semiconductor structures with compositionally-graded transition layer
12/04/14High voltage durability iii-nitride device
11/20/14Semiconductor device with a field plate double trench having a thick bottom dielectric
11/20/14Semiconductor device with a field plate trench having a thick bottom dielectric
11/20/14Semiconductor device with a thick bottom field plate trench having a single dielectric and angled sidewalls
11/20/14Group iii-v device with a selectively modified impurity concentration
11/13/14Power semiconductor device with reduced on-resistance and increased breakdown voltage
10/30/14Power semiconductor package
09/18/14Iii-nitride heterojunction device
09/11/14Delamination and crack prevention in iii-nitride wafers
09/11/14Rf switch gate control
08/28/14Drain pad having a reduced termination electric field
08/14/14Sintering utilizing non-mechanical pressure
08/14/14Integrated half-bridge circuit with low side and high side composite switches
08/14/14Inverter circuit including short circuit protected composite switch
07/31/14Refractory metal nitride capped contact
07/31/14Combined sense signal generation and detection
07/31/14Single layer touch sensor
07/31/14Fabrication of iii-nitride layers
07/24/14Gallium nitride devices
07/24/14Integrated power device with iii-nitride half bridges
07/24/14Half-bridge package with a conductive clip
07/17/14Semiconductor structure including a spatially confined dielectric region
07/17/14Iii-nitride transistor with high resistivity substrate
07/10/14Stacked half-bridge package
07/10/14Dc/dc converter with iii-nitride switches
06/26/14Semiconductor package with multiple conductive clips
06/19/14Cascode circuit integration of group iii-n and group iv devices
06/19/14Reduced gate charge trench field-effect transistor
06/19/14Trench fet having merged gate dielectric
06/19/14Iii-nitride power conversion circuit
06/12/14Iii-nitride device having an enhanced field plate
05/29/14Ion implantation at high temperature surface equilibrium conditions
05/15/14Gallium nitride devices with aluminum nitride intermediate layer
05/15/14Semiconductor package with temperature sensor
05/15/14Dual compartment semiconductor package
05/08/14Semiconductor package having multi-phase power inverter with internal temperature sensor
05/08/14Semiconductor package having an over-temperature protection circuit utilizing multiple temperature threshold values
05/08/14Semiconductor packages utilizing leadframe panels with grooves in connecting bars
05/01/14Power quad flat no-lead (pqfn) package having control and driver circuits
05/01/14Control and driver circuits on a power quad flat no-lead (pqfn) leadframe
05/01/14Buck converter power package
04/24/14Semiconductor package including conductive carrier coupled power switches
04/24/14Power converter package including top-drain configured power fet
04/24/14Semiconductor package with conductive carrier integrated heat spreader
04/24/14Power converter package including vertically stacked driver ic
04/17/14Surface mountable power components
04/17/14Power quad flat no-lead (pqfn) package having bootstrap diodes on a common integrated circuit (ic)
04/17/14Fabrication of iii-nitride semiconductor device and related structures
04/10/14Gallium nitride devices with gallium nitride alloy intermediate layer
04/10/14Active area shaping of iii-nitride devices utilizing a field plate defined by a dielectric body
04/10/14Open source power quad flat no-lead (pqfn) leadframe
04/10/14Power quad flat no-lead (pqfn) package in a single shunt inverter circuit
04/03/14Power quad flat no-lead (pqfn) semiconductor package with leadframe islands for multi-phase power inverter
03/27/14Semiconductor package with heat spreader
03/20/14Gallium nitride devices with aluminum nitride alloy intermediate layer
03/13/14Active area shaping of iii-nitride devices utilizing multiple dielectric materials
03/13/14Active area shaping of iii-nitride devices utilizing a source-side field plate and a wider drain-side field plate
03/13/14Active area shaping of iii-nitride devices utilizing steps of source-side and drain-side field plates
03/13/14Integrated group iii-v power stage
03/13/14Power converter including integrated driver providing overcurrent protection
03/06/14Power quad flat no-lead (pqfn) package
02/27/14Group iii-v device with strain-relieving layers
02/27/14Power converter including integrated driver for depletion mode group iii-v transistor
02/20/14Semiconductor package for high power devices
02/06/14Iii-nitride semiconductor device with stepped gate
02/06/14Monolithic integrated group iii-v and group iv device
02/06/14Iii-nitride wafer fabrication
01/30/14Level shifter utilizing bidirectional signaling through a capacitive isolation barrier
01/30/14High voltage cascoded iii-nitride rectifier package
01/30/14Enhancement mode iii-nitride device
01/09/14Integrated composite group iii-v and group iv semiconductor device
01/02/14Thermally enhanced semiconductor package
12/19/13Monolithic integrated composite group iii-v and group iv device
12/19/13Thermally enhanced semiconductor package with conductive clip
12/19/13Monolithic group iii-v and group iv device
11/28/13Multi-chip-scale package
11/14/13Integrated iii-nitride and silicon device
10/24/13Power converter with over-voltage protection
10/24/13Oscillation free fast-recovery diode
10/24/13Reverse rotation of a motor configured for operation in a forward direction
10/17/13System on chip for power inverter
10/10/13Iii-nitride heterojunction device
10/10/13Trench fet with ruggedness enhancement regions
10/10/13Power converter having an advanced control ic
10/03/13Igbt with buried emitter electrode
10/03/13Deep gate trench igbt
10/03/13Integrated dual power converter package having internal driver ic
10/03/13Dual power converter package using external driver ic
10/03/13Porous metallic film as die attach and interconnect
10/03/13Monolithic power converter package with through substrate vias
09/26/13Iii-nitride power device
09/26/13Direct contact package for power transistors
09/26/13Voltage regulator having an emulated ripple generator
09/19/13Group iii-v and group iv composite switch
09/19/13Iii-nitride multi-channel heterojunction device
09/12/13Composite semiconductor device with active oscillation prevention
09/05/13Stacked half-bridge package with a common leadframe
09/05/13Electronic ballast with power factor correction
08/22/13Power transistor having segmented gate
08/22/13Transistor having increased breakdown voltage
08/15/13Power device with solderable front metal
08/01/13Method and growing a iii-nitride layer
07/18/13Power module package having a multi-phase inverter and power factor correction
07/11/13Group iii-v and group iv composite diode
07/11/13Power semiconductor device with reduced contact resistance
06/27/13Semiconductor package with conductive heat spreader
06/13/13Semiconductor package having internal shunt and solder stop dimples
06/06/13Power semiconductor package with conductive clip
06/06/13Semiconductor device assembly utilizing a dbc substrate
06/06/13Solderable contact and passivation for semiconductor dies
06/06/13Method for forming a reliable solderable contact
05/30/13Method for forming gallium nitride devices with conductive regions
05/30/13Multi-transistor exposed conductive clip for semiconductor packages
05/23/13Gallium nitride devices with vias
05/09/13Gallium nitride devices with compositionally-graded transition layer
05/09/13Method for fabricating a vertical ldmos device
05/02/13Active area shaping for iii-nitride devices
05/02/13Compact wirebonded power quad flat no-lead (pqfn) package
04/25/13System and providing active power balancing
04/18/13Flyback driver for use in a flyback power converter and related method
03/28/13System for actively managing energy banks during energy transfer and related method
03/21/13Group iii-v device structure having a selectively reduced impurity concentration
02/28/13Small-outline package for a power transistor
02/28/13Power saving resonant gate driver and related method
01/31/13Energy storage system and related method
01/17/13Stacked half-bridge power module
01/17/13Composite semiconductor device with a soi substrate having an integrated diode
01/17/13Nested composite diode
01/17/13Nested composite switch
01/03/13Gated algan/gan schottky device
12/13/12Enhancement mode group iii-v high electron mobility transistor (hemt) and fabrication
12/13/12Power semiconductor package with double-sided cooling
12/06/12Semiconductor wafer with reduced thickness variation and fabricating same
11/22/12Thermally enhanced semiconductor package with exposed parallel conductive clip
11/22/12Multi-transistor exposed conductive clip for high power semiconductor packages
11/22/12Common drain exposed conductive clip for high power semiconductor packages
11/22/12Monolithic group iii-v power converter
11/08/12High voltage cascoded iii-nitride rectifier package with stamped leadframe
11/08/12High voltage cascoded iii-nitride rectifier package with etched leadframe
11/08/12High voltage cascoded iii-nitride rectifier package utilizing clips on package support surface
11/01/12Integrated power stage
11/01/12Power module with press-fit clamps
10/18/12Bondwireless power module with three-dimensional current routing
10/11/12Stacked composite device including a group iii-v transistor and a group iv lateral transistor
10/11/12Stacked composite device including a group iii-v transistor and a group iv vertical transistor
10/11/12Stacked composite device including a group iii-v transistor and a group iv diode
10/04/12Dual compartment semiconductor package with temperature sensor
09/27/12High voltage composite semiconductor device with protection for a low voltage device
09/27/12Composite semiconductor device with turn-on prevention control
09/27/12Iii-nitride transistor with passive oscillation prevention
09/20/12High voltage rectifier and switching circuits
09/13/12Integrated semiconductor device
09/06/12Iii-nitride transistor stacked with fet in a package
09/06/12Iii-nitride transistor stacked with diode in a package
09/06/12Programmable gate iii-nitride semiconductor device
09/06/12Iii-nitride semiconductor structures with strain absorbing interlayer transition modules
09/06/12Igbt power semiconductor package having a conductive clip
08/23/12Trench mosfet and fabricating same
08/09/12Integrated high-voltage power supply start-up circuit



ARCHIVE: New 2016 2015 2014 2013 2012 2011 2010 2009



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