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International Rectifier Corporation
International Rectifier Corporation el Segundo Ca
International Rectifier Corporation_20100107

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International Rectifier Corporation patents


      
Recent patent applications related to International Rectifier Corporation. International Rectifier Corporation is listed as an Agent/Assignee. Note: International Rectifier Corporation may have other listings under different names/spellings. We're not affiliated with International Rectifier Corporation, we're just tracking patents.

ARCHIVE: New 2014 2013 2012 2011 2010 2009 | Company Directory "I" | International Rectifier Corporation-related inventors



International Rectifier

Integrated half-bridge circuit with low side and high side composite switches

International Rectifier

Inverter circuit including short circuit protected composite switch

International Rectifier

Refractory metal nitride capped contact

Search recent Press Releases: International Rectifier Corporation-related press releases
Count Application # Date International Rectifier Corporation patents (updated weekly) - BOOKMARK this page
12014022440908/14/14Sintering utilizing non-mechanical pressure
22014022516208/14/14Integrated half-bridge circuit with low side and high side composite switches
32014022516308/14/14Inverter circuit including short circuit protected composite switch
42014021009207/31/14Refractory metal nitride capped contact
52014021051907/31/14Combined sense signal generation and detection
62014021076807/31/14Single layer touch sensor
72014021304607/31/14Fabrication of iii-nitride layers
82014020329407/24/14Gallium nitride devices
92014020329507/24/14Integrated power device with iii-nitride half bridges
102014020341907/24/14Half-bridge package with a conductive clip
112014019746107/17/14Semiconductor structure including a spatially confined dielectric region
122014019746207/17/14Iii-nitride transistor with high resistivity substrate
132014019133707/10/14Stacked half-bridge package
142014019244107/10/14Dc/dc converter with iii-nitride switches
152014017563006/26/14Semiconductor package with multiple conductive clips
162014016711206/19/14Cascode circuit integration of group iii-n and group iv devices
172014016715206/19/14Reduced gate charge trench field-effect transistor
182014016715306/19/14Trench fet having merged gate dielectric
192014016905206/19/14Iii-nitride power conversion circuit
202014015911606/12/14Iii-nitride device having an enhanced field plate
212014014799805/29/14Ion implantation at high temperature surface equilibrium conditions
222014013165905/15/14Gallium nitride devices with aluminum nitride intermediate layer
232014013170905/15/14Semiconductor package with temperature sensor
242014013176705/15/14Dual compartment semiconductor package
252014013165905/15/14Gallium nitride devices with aluminum nitride intermediate layer
262014013170905/15/14Semiconductor package with temperature sensor
272014013176705/15/14Dual compartment semiconductor package
282014012489005/08/14Semiconductor package having multi-phase power inverter with internal temperature sensor
292014012625605/08/14Semiconductor package having an over-temperature protection circuit utilizing multiple temperature threshold values
302014012786105/08/14Semiconductor packages utilizing leadframe panels with grooves in connecting bars
312014012489005/08/14Semiconductor package having multi-phase power inverter with internal temperature sensor
322014012625605/08/14Semiconductor package having an over-temperature protection circuit utilizing multiple temperature threshold values
332014012786105/08/14Semiconductor packages utilizing leadframe panels with grooves in connecting bars
342014011751705/01/14Power quad flat no-lead (pqfn) package having control and driver circuits
352014011751805/01/14Control and driver circuits on a power quad flat no-lead (pqfn) leadframe
362014011803205/01/14Buck converter power package
372014011751705/01/14Power quad flat no-lead (pqfn) package having control and driver circuits
382014011751805/01/14Control and driver circuits on a power quad flat no-lead (pqfn) leadframe
392014011803205/01/14Buck converter power package
402014011077604/24/14Semiconductor package including conductive carrier coupled power switches
412014011078804/24/14Power converter package including top-drain configured power fet
422014011079604/24/14Semiconductor package with conductive carrier integrated heat spreader
432014011086304/24/14Power converter package including vertically stacked driver ic
442014011077604/24/14Semiconductor package including conductive carrier coupled power switches
452014011078804/24/14Power converter package including top-drain configured power fet
462014011079604/24/14Semiconductor package with conductive carrier integrated heat spreader
472014011086304/24/14Power converter package including vertically stacked driver ic
482014010339304/17/14Surface mountable power components
492014010351404/17/14Power quad flat no-lead (pqfn) package having bootstrap diodes on a common integrated circuit (ic)
502014010654804/17/14Fabrication of iii-nitride semiconductor device and related structures
512014010339304/17/14Surface mountable power components
522014010351404/17/14Power quad flat no-lead (pqfn) package having bootstrap diodes on a common integrated circuit (ic)
532014010654804/17/14Fabrication of iii-nitride semiconductor device and related structures
542014009744604/10/14Gallium nitride devices with gallium nitride alloy intermediate layer
552014009747104/10/14Active area shaping of iii-nitride devices utilizing a field plate defined by a dielectric body
562014009749804/10/14Open source power quad flat no-lead (pqfn) leadframe
572014009753104/10/14Power quad flat no-lead (pqfn) package in a single shunt inverter circuit
582014009744604/10/14Gallium nitride devices with gallium nitride alloy intermediate layer
592014009747104/10/14Active area shaping of iii-nitride devices utilizing a field plate defined by a dielectric body
602014009749804/10/14Open source power quad flat no-lead (pqfn) leadframe
612014009753104/10/14Power quad flat no-lead (pqfn) package in a single shunt inverter circuit
622014009744604/10/14Gallium nitride devices with gallium nitride alloy intermediate layer
632014009747104/10/14Active area shaping of iii-nitride devices utilizing a field plate defined by a dielectric body
642014009749804/10/14Open source power quad flat no-lead (pqfn) leadframe
652014009753104/10/14Power quad flat no-lead (pqfn) package in a single shunt inverter circuit
662014009144904/03/14Power quad flat no-lead (pqfn) semiconductor package with leadframe islands for multi-phase power inverter
672014009144904/03/14Power quad flat no-lead (pqfn) semiconductor package with leadframe islands for multi-phase power inverter
682014008443103/27/14Semiconductor package with heat spreader
692014008443103/27/14Semiconductor package with heat spreader
702014007722203/20/14Gallium nitride devices with aluminum nitride alloy intermediate layer
712014007722203/20/14Gallium nitride devices with aluminum nitride alloy intermediate layer
722014007027803/13/14Active area shaping of iii-nitride devices utilizing multiple dielectric materials
732014007027903/13/14Active area shaping of iii-nitride devices utilizing a source-side field plate and a wider drain-side field plate
742014007028003/13/14Active area shaping of iii-nitride devices utilizing steps of source-side and drain-side field plates
752014007062703/13/14Integrated group iii-v power stage
762014007078603/13/14Power converter including integrated driver providing overcurrent protection
772014007027803/13/14Active area shaping of iii-nitride devices utilizing multiple dielectric materials
782014007027903/13/14Active area shaping of iii-nitride devices utilizing a source-side field plate and a wider drain-side field plate
792014007028003/13/14Active area shaping of iii-nitride devices utilizing steps of source-side and drain-side field plates
802014007062703/13/14Integrated group iii-v power stage
812014007078603/13/14Power converter including integrated driver providing overcurrent protection
822014006188503/06/14Power quad flat no-lead (pqfn) package
832014006188503/06/14Power quad flat no-lead (pqfn) package
842014005460702/27/14Group iii-v device with strain-relieving layers
852014005510902/27/14Power converter including integrated driver for depletion mode group iii-v transistor
862014004892302/20/14Semiconductor package for high power devices
872014003495902/06/14Iii-nitride semiconductor device with stepped gate
882014003500502/06/14Monolithic integrated group iii-v and group iv device
892014003839102/06/14Iii-nitride wafer fabrication
902014002836901/30/14Level shifter utilizing bidirectional signaling through a capacitive isolation barrier
912014003085401/30/14High voltage cascoded iii-nitride rectifier package
922014003085801/30/14Enhancement mode iii-nitride device
932014000866301/09/14Integrated composite group iii-v and group iv semiconductor device
942014000161401/02/14Thermally enhanced semiconductor package
952013033457412/19/13Monolithic integrated composite group iii-v and group iv device
962013033761112/19/13Thermally enhanced semiconductor package with conductive clip
972013033762612/19/13Monolithic group iii-v and group iv device
982013031652711/28/13Multi-chip-scale package
992013029987711/14/13Integrated iii-nitride and silicon device
1002013027736210/24/13Power converter with over-voltage protection
1012013027771110/24/13Oscillation free fast-recovery diode
1022013027818110/24/13Reverse rotation of a motor configured for operation in a forward direction
1032013027120110/17/13System on chip for power inverter
1042013026457910/10/13Iii-nitride heterojunction device
1052013026463610/10/13Trench fet with ruggedness enhancement regions
1062013026496810/10/13Power converter having an advanced control ic
1072013025674410/03/13Igbt with buried emitter electrode
1082013025674510/03/13Deep gate trench igbt
1092013025680710/03/13Integrated dual power converter package having internal driver ic
1102013025685910/03/13Dual power converter package using external driver ic
1112013025689410/03/13Porous metallic film as die attach and interconnect
1122013025690510/03/13Monolithic power converter package with through substrate vias
1132013024888409/26/13Iii-nitride power device
1142013024907209/26/13Direct contact package for power transistors
1152013024950809/26/13Voltage regulator having an emulated ripple generator
1162013024089809/19/13Group iii-v and group iv composite switch
1172013024091109/19/13Iii-nitride multi-channel heterojunction device
1182013023420809/12/13Composite semiconductor device with active oscillation prevention
1192013022879409/05/13Stacked half-bridge package with a common leadframe
1202013022912609/05/13Electronic ballast with power factor correction
1212013021428308/22/13Power transistor having segmented gate
1222013021433008/22/13Transistor having increased breakdown voltage
1232013021428308/22/13Power transistor having segmented gate
1242013021433008/22/13Transistor having increased breakdown voltage
1252013020712008/15/13Power device with solderable front metal
1262013020712008/15/13Power device with solderable front metal
1272013019649008/01/13Method and apparatus for growing a iii-nitride layer
1282013019649008/01/13Method and apparatus for growing a iii-nitride layer
1292013018247007/18/13Power module package having a multi-phase inverter and power factor correction
1302013018247007/18/13Power module package having a multi-phase inverter and power factor correction
1312013017554207/11/13Group iii-v and group iv composite diode
1322013017569007/11/13Power semiconductor device with reduced contact resistance
1332013017554207/11/13Group iii-v and group iv composite diode
1342013017569007/11/13Power semiconductor device with reduced contact resistance
1352013016180306/27/13Semiconductor package with conductive heat spreader
1362013016180306/27/13Semiconductor package with conductive heat spreader
1372013014701606/13/13Semiconductor package having internal shunt and solder stop dimples
1382013014701606/13/13Semiconductor package having internal shunt and solder stop dimples
1392013014060206/06/13Power semiconductor package with conductive clip
1402013014068406/06/13Semiconductor device assembly utilizing a dbc substrate
1412013014070106/06/13Solderable contact and passivation for semiconductor dies
1422013014339906/06/13Method for forming a reliable solderable contact
1432013014060206/06/13Power semiconductor package with conductive clip
1442013014068406/06/13Semiconductor device assembly utilizing a dbc substrate
1452013014070106/06/13Solderable contact and passivation for semiconductor dies
1462013014339906/06/13Method for forming a reliable solderable contact
1472013013443705/30/13Method for forming gallium nitride devices with conductive regions
1482013013452405/30/13Multi-transistor exposed conductive clip for semiconductor packages
1492013013443705/30/13Method for forming gallium nitride devices with conductive regions
1502013013452405/30/13Multi-transistor exposed conductive clip for semiconductor packages
1512013012689505/23/13Gallium nitride devices with vias
1522013012689505/23/13Gallium nitride devices with vias
1532013011299005/09/13Gallium nitride devices with compositionally-graded transition layer
1542013011574605/09/13Method for fabricating a vertical ldmos device
1552013011299005/09/13Gallium nitride devices with compositionally-graded transition layer
1562013011574605/09/13Method for fabricating a vertical ldmos device
1572013010581405/02/13Active area shaping for iii-nitride devices
1582013010595805/02/13Compact wirebonded power quad flat no-lead (pqfn) package
1592013010581405/02/13Active area shaping for iii-nitride devices
1602013010595805/02/13Compact wirebonded power quad flat no-lead (pqfn) package
1612013009957904/25/13System and method for providing active power balancing
1622013009335604/18/13Flyback driver for use in a flyback power converter and related method
1632013007631103/28/13System for actively managing energy banks during energy transfer and related method
1642013006920803/21/13Group iii-v device structure having a selectively reduced impurity concentration
1652013004907902/28/13Small-outline package for a power transistor
1662013004981602/28/13Power saving resonant gate driver and related method
1672013002682201/31/13Energy storage system and related method
1682013001549501/17/13Stacked half-bridge power module
1692013001549901/17/13Composite semiconductor device with a soi substrate having an integrated diode
1702013001550101/17/13Nested composite diode
1712013001590501/17/13Nested composite switch
1722013000164801/03/13Gated algan/gan schottky device
1732012031310612/13/12Enhancement mode group iii-v high electron mobility transistor (hemt) and method for fabrication
1742012031437212/13/12Power semiconductor package with double-sided cooling
1752012030607212/06/12Semiconductor wafer with reduced thickness variation and method for fabricating same
1762012029275211/22/12Thermally enhanced semiconductor package with exposed parallel conductive clip
1772012029275311/22/12Multi-transistor exposed conductive clip for high power semiconductor packages
1782012029275411/22/12Common drain exposed conductive clip for high power semiconductor packages
1792012029314711/22/12Monolithic group iii-v power converter
1802012028024511/08/12High voltage cascoded iii-nitride rectifier package with stamped leadframe
1812012028024611/08/12High voltage cascoded iii-nitride rectifier package with etched leadframe
1822012028024711/08/12High voltage cascoded iii-nitride rectifier package utilizing clips on package support surface
1832012027436611/01/12Integrated power stage
1842012027512111/01/12Power module with press-fit clamps
1852012026210010/18/12Bondwireless power module with three-dimensional current routing
1862012025618810/11/12Stacked composite device including a group iii-v transistor and a group iv lateral transistor
1872012025618910/11/12Stacked composite device including a group iii-v transistor and a group iv vertical transistor
1882012025619010/11/12Stacked composite device including a group iii-v transistor and a group iv diode
1892012024856410/04/12Dual compartment semiconductor package with temperature sensor
1902012024175609/27/12High voltage composite semiconductor device with protection for a low voltage device
1912012024181909/27/12Composite semiconductor device with turn-on prevention control
1922012024182009/27/12Iii-nitride transistor with passive oscillation prevention
1932012023520909/20/12High voltage rectifier and switching circuits
1942012022917609/13/12Integrated semiconductor device
1952012022332109/06/12Iii-nitride transistor stacked with fet in a package
1962012022332209/06/12Iii-nitride transistor stacked with diode in a package
1972012022332709/06/12Programmable gate iii-nitride semiconductor device
1982012022336509/06/12Iii-nitride semiconductor structures with strain absorbing interlayer transition modules
1992012022341509/06/12Igbt power semiconductor package having a conductive clip
2002012021182508/23/12Trench mosfet and method for fabricating same
2012012020027508/09/12Integrated high-voltage power supply start-up circuit
2022012020054708/09/12Gate driver with multiple slopes for plasma display panels
2032012019417008/02/12Load detection for switched-mode power converters
2042012018792807/26/12Synchronous buck converter including multi-mode control for light load efficiency and related method
2052012018162407/19/12Stacked half-bridge package with a common conductive clip
2062012018167407/19/12Stacked half-bridge package with a common conductive leadframe
2072012018168107/19/12Stacked half-bridge package with a current carrying layer
2082012017568807/12/12Semiconductor package with reduced on-resistance and top metal spreading resistance with application to power transistor packaging
2092012016892207/05/12High power semiconductor package with conductive clip
2102012016892307/05/12High power semiconductor package with conductive clip on multiple transistors
2112012016892407/05/12High power semiconductor package with multiple conductive clips
2122012016892507/05/12High power semiconductor package with conductive clips and flip chip driver ic
2132012016892607/05/12High power semiconductor package with conductive clip and flip chip driver ic with integrated control transistor
2142012015335106/21/12Stress modulated group iii-v semiconductor device and related method
2152012014620506/14/12Multi-chip module (mcm) power quad flat no-lead (pqfn) semiconductor package utilizing a leadframe for electrical interconnections
2162012011922305/17/12Gallium nitride semiconductor structures with compositionally-graded transition layer
2172012010458705/03/12Direct contact semiconductor package with power transistor
2182012010458605/03/12Direct contact flip chip package with power transistors
2192012009147004/19/12Programmable gate iii-nitride power transistor
2202012006819003/22/12Gallium nitride devices with electrically conductive regions
2212012007096703/22/12Method for forming gallium nitride devices with conductive regions
2222012006172503/15/12Power semiconductor package
2232012006219903/15/12Iii-nitride power converter circuit
2242012006228103/15/12Power converter with split power supply
2252012004980103/01/12Dynamic power management system and method
2262012004983303/01/12Smart photovoltaic panel and method for regulating power using same
2272012004355302/23/12Hybrid semiconductor device having a gan transistor and a silicon mosfet
2282012002571302/02/12System using shunt circuits to selectively bypass open loads
2292011031608612/29/11Wafer scale package for high power devices
2302011028486211/24/11Iii-nitride switching device with an emulated diode
2312011028486811/24/11High voltage iii-nitride transistor
2322011028486911/24/11High voltage durability iii-nitride hemt
2332011028495011/24/11Method for fabricating a shallow and narrow trench fetand related structures
2342011027871011/17/11Direct contact leadless package
2352011027871111/17/11Leadless package for high current devices
2362011027270511/10/11Interdigitated conductive support for gan semiconductor die
2372011027275911/10/11Vertical ldmos device and method for fabricating same
2382011027518311/10/11Enhancement mode iii-nitride fet
2392011026032210/27/11"semiconductor on semiconductor substrate multi-chip-scale package"
2402011026066810/27/11Low frequency drive control circuit and method for driving an inductive load
2412011024101910/06/11Iii-nitride power semiconductor device
2422011024467110/06/11Method for fabricating a iii-nitride semiconductor device
2432011022709009/22/11Programmable iii-nitride transistor with aluminum-doped gate
2442011022709209/22/11Iii-nitride semiconductor device
2452011022374609/15/11Method for fabrication of iii-nitride heterojunction semiconductor device
2462011021656309/08/11Hemt/gan half-bridge circuit
2472011021033709/01/11Monolithic integration of silicon and group iii-v devices
2482011021033809/01/11Efficient high voltage switching circuits and monolithic integration of same
2492011019861108/18/11Iii-nitride power device with solderable front metal


ARCHIVE: New 2014 2013 2012 2011 2010 2009



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This listing is an abstract for educational and research purposes is only meant as a recent sample of applications filed, not a comprehensive history. Freshpatents.com is not affiliated or associated with International Rectifier Corporation in any way and there may be associated servicemarks. This data is also published to the public by the USPTO and available for free on their website. Note that there may be alternative spellings for International Rectifier Corporation with additional patents listed. Browse our Agent directory for other possible listings. Page by FreshPatents.com

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