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International Rectifier Corporation
International Rectifier Corporation el Segundo Ca
International Rectifier Corporation_20100107

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International Rectifier Corporation patents


      
Recent patent applications related to International Rectifier Corporation. International Rectifier Corporation is listed as an Agent/Assignee. Note: International Rectifier Corporation may have other listings under different names/spellings. We're not affiliated with International Rectifier Corporation, we're just tracking patents.

ARCHIVE: New 2015 2014 2013 2012 2011 2010 2009 | Company Directory "I" | International Rectifier Corporation-related inventors


Power converter with split voltage supply

International Rectifier

Power converter with split voltage supply

Semiconductor package with conductive clips

International Rectifier

Semiconductor package with conductive clips



Count Application # Date International Rectifier Corporation patents (updated weekly) - BOOKMARK this page
12015020743207/23/15 System on chip with power switches
22015020749507/23/15 Power converter with split voltage supply
32015019436907/09/15 Semiconductor package with conductive clips
42015018788007/02/15 Semiconductor structure with compositionally-graded transition layer
52015017117206/18/15 High performance iii-nitride power device
62015016226106/11/15 Power semiconductor package with integrated heat spreader and partially etched conductive carrier
72015016229706/11/15 Power converter package with an integrated output inductor
82015016230306/11/15 Array based fabrication of power semiconductor package with integrated heat spreader
92015016232106/11/15 Composite power device with esd protection clamp
102015016283206/11/15 Group iii-v voltage converter with monolithically integrated level shifter, high side driver, and high side power switch
112015015527506/04/15 Enhancement mode iii-nitride switch
122015015535806/04/15 Group iii-v transistor with semiconductor field plate
132015013714105/21/15 Gallium nitride devices
142015013003605/14/15 Semiconductor package with low profile switch node integrated heat spreader
152015013293305/14/15 Iii-nitride semiconductor device fabrication
162015012363005/07/15 Voltage converter with vcc-less rdson current sensing circuit
172015011532704/30/15 Group iii-v device including a buffer termination body
182015011591104/30/15 Adaptive off time control scheme for semi-resonant and hybrid converters
192015010849504/23/15 Gallium nitride devices with discontinuously graded transition layer
202015009719604/09/15 Integrated device including silicon and iii-nitride semiconductor devices
212015007707403/19/15 Circuit and producing an average output inductor current indicator
222015005456402/26/15 Level shifter utilizing a capacitive isolation barrier
232015003512002/05/15 Wafer scale package for high power devices
242015003796502/05/15 Fabrication of iii-nitride semiconductor device and related structures
252015002161901/22/15 Iii-nitride semiconductor device with reduced electric field between gate and drain
262015001469801/15/15 Integrated iii-nitride d-mode hfet with cascoded pair half bridge
272015001470101/15/15 Iii-nitride semiconductor device with reduced electric field
282015001470301/15/15 Iii-nitride device with solderable front metal
292015001474001/15/15 Monolithic composite iii-nitride transistor with high voltage group iv enable switch
302015000844501/08/15 Iii-nitride device and fet in a package
312015000857201/08/15 Power semiconductor package with multiple dies
322015000159901/01/15 Power semiconductor package with non-contiguous, multi-section conductive carrier
332015000172201/01/15 Semiconductor device with reduced contact resistance
342014037482512/25/14 Power semiconductor device with contiguous gate trenches and offset source trenches
352014037524212/25/14 Depletion mode group iii-v transistor with high voltage group iv enable switch
362014036774412/18/14 Monolithic integrated composite group iii-v and group iv semiconductor device and ic
372014035368012/04/14 Gallium nitride semiconductor structures with compositionally-graded transition layer
382014035372312/04/14 High voltage durability iii-nitride device
392014033965111/20/14 Semiconductor device with a field plate double trench having a thick bottom dielectric
402014033966911/20/14 Semiconductor device with a field plate trench having a thick bottom dielectric
412014033967011/20/14 Semiconductor device with a thick bottom field plate trench having a single dielectric and angled sidewalls
422014033968611/20/14 Group iii-v device with a selectively modified impurity concentration
432014033287911/13/14 Power semiconductor device with reduced on-resistance and increased breakdown voltage
442014031966510/30/14 Power semiconductor package
452014026437309/18/14 Iii-nitride heterojunction device
462014025237509/11/14 Delamination and crack prevention in iii-nitride wafers
472014025321709/11/14 Rf switch gate control
482014023934908/28/14 Drain pad having a reduced termination electric field
492014022440908/14/14 Sintering utilizing non-mechanical pressure
502014022516208/14/14 Integrated half-bridge circuit with low side and high side composite switches
512014022516308/14/14 Inverter circuit including short circuit protected composite switch
522014021009207/31/14 Refractory metal nitride capped contact
532014021051907/31/14 Combined sense signal generation and detection
542014021076807/31/14 Single layer touch sensor
552014021304607/31/14 Fabrication of iii-nitride layers
562014020329407/24/14 Gallium nitride devices
572014020329507/24/14 Integrated power device with iii-nitride half bridges
582014020341907/24/14 Half-bridge package with a conductive clip
592014019746107/17/14 Semiconductor structure including a spatially confined dielectric region
602014019746207/17/14 Iii-nitride transistor with high resistivity substrate
612014019133707/10/14 Stacked half-bridge package
622014019244107/10/14 Dc/dc converter with iii-nitride switches
632014017563006/26/14 Semiconductor package with multiple conductive clips
642014016711206/19/14 Cascode circuit integration of group iii-n and group iv devices
652014016715206/19/14 Reduced gate charge trench field-effect transistor
662014016715306/19/14 Trench fet having merged gate dielectric
672014016905206/19/14 Iii-nitride power conversion circuit
682014015911606/12/14 Iii-nitride device having an enhanced field plate
692014014799805/29/14 Ion implantation at high temperature surface equilibrium conditions
702014013165905/15/14 Gallium nitride devices with aluminum nitride intermediate layer
712014013170905/15/14 Semiconductor package with temperature sensor
722014013176705/15/14 Dual compartment semiconductor package
732014012489005/08/14 Semiconductor package having multi-phase power inverter with internal temperature sensor
742014012625605/08/14 Semiconductor package having an over-temperature protection circuit utilizing multiple temperature threshold values
752014012786105/08/14 Semiconductor packages utilizing leadframe panels with grooves in connecting bars
762014011751705/01/14 Power quad flat no-lead (pqfn) package having control and driver circuits
772014011751805/01/14 Control and driver circuits on a power quad flat no-lead (pqfn) leadframe
782014011803205/01/14 Buck converter power package
792014011077604/24/14 Semiconductor package including conductive carrier coupled power switches
802014011078804/24/14 Power converter package including top-drain configured power fet
812014011079604/24/14 Semiconductor package with conductive carrier integrated heat spreader
822014011086304/24/14 Power converter package including vertically stacked driver ic
832014010339304/17/14 Surface mountable power components
842014010351404/17/14 Power quad flat no-lead (pqfn) package having bootstrap diodes on a common integrated circuit (ic)
852014010654804/17/14 Fabrication of iii-nitride semiconductor device and related structures
862014009744604/10/14 Gallium nitride devices with gallium nitride alloy intermediate layer
872014009747104/10/14 Active area shaping of iii-nitride devices utilizing a field plate defined by a dielectric body
882014009749804/10/14 Open source power quad flat no-lead (pqfn) leadframe
892014009753104/10/14 Power quad flat no-lead (pqfn) package in a single shunt inverter circuit
902014009144904/03/14 Power quad flat no-lead (pqfn) semiconductor package with leadframe islands for multi-phase power inverter
912014008443103/27/14 Semiconductor package with heat spreader
922014007722203/20/14 Gallium nitride devices with aluminum nitride alloy intermediate layer
932014007027803/13/14 Active area shaping of iii-nitride devices utilizing multiple dielectric materials
942014007027903/13/14 Active area shaping of iii-nitride devices utilizing a source-side field plate and a wider drain-side field plate
952014007028003/13/14 Active area shaping of iii-nitride devices utilizing steps of source-side and drain-side field plates
962014007062703/13/14 Integrated group iii-v power stage
972014007078603/13/14 Power converter including integrated driver providing overcurrent protection
982014006188503/06/14 Power quad flat no-lead (pqfn) package
992014005460702/27/14 Group iii-v device with strain-relieving layers
1002014005510902/27/14 Power converter including integrated driver for depletion mode group iii-v transistor
1012014004892302/20/14 Semiconductor package for high power devices
1022014003495902/06/14 Iii-nitride semiconductor device with stepped gate
1032014003500502/06/14 Monolithic integrated group iii-v and group iv device
1042014003839102/06/14 Iii-nitride wafer fabrication
1052014002836901/30/14 Level shifter utilizing bidirectional signaling through a capacitive isolation barrier
1062014003085401/30/14 High voltage cascoded iii-nitride rectifier package
1072014003085801/30/14 Enhancement mode iii-nitride device
1082014000866301/09/14 Integrated composite group iii-v and group iv semiconductor device
1092014000161401/02/14 Thermally enhanced semiconductor package
1102013033457412/19/13 Monolithic integrated composite group iii-v and group iv device
1112013033761112/19/13 Thermally enhanced semiconductor package with conductive clip
1122013033762612/19/13 Monolithic group iii-v and group iv device
1132013031652711/28/13 Multi-chip-scale package
1142013029987711/14/13 Integrated iii-nitride and silicon device
1152013027736210/24/13 Power converter with over-voltage protection
1162013027771110/24/13 Oscillation free fast-recovery diode
1172013027818110/24/13 Reverse rotation of a motor configured for operation in a forward direction
1182013027120110/17/13 System on chip for power inverter
1192013026457910/10/13 Iii-nitride heterojunction device
1202013026463610/10/13 Trench fet with ruggedness enhancement regions
1212013026496810/10/13 Power converter having an advanced control ic
1222013025674410/03/13 Igbt with buried emitter electrode
1232013025674510/03/13 Deep gate trench igbt
1242013025680710/03/13 Integrated dual power converter package having internal driver ic
1252013025685910/03/13 Dual power converter package using external driver ic
1262013025689410/03/13 Porous metallic film as die attach and interconnect
1272013025690510/03/13 Monolithic power converter package with through substrate vias
1282013024888409/26/13 Iii-nitride power device
1292013024907209/26/13 Direct contact package for power transistors
1302013024950809/26/13 Voltage regulator having an emulated ripple generator
1312013024089809/19/13 Group iii-v and group iv composite switch
1322013024091109/19/13 Iii-nitride multi-channel heterojunction device
1332013023420809/12/13 Composite semiconductor device with active oscillation prevention
1342013022879409/05/13 Stacked half-bridge package with a common leadframe
1352013022912609/05/13 Electronic ballast with power factor correction
1362013021428308/22/13 Power transistor having segmented gate
1372013021433008/22/13 Transistor having increased breakdown voltage
1382013020712008/15/13 Power device with solderable front metal
1392013019649008/01/13 Method and growing a iii-nitride layer
1402013018247007/18/13 Power module package having a multi-phase inverter and power factor correction
1412013017554207/11/13 Group iii-v and group iv composite diode
1422013017569007/11/13 Power semiconductor device with reduced contact resistance
1432013016180306/27/13 Semiconductor package with conductive heat spreader
1442013014701606/13/13 Semiconductor package having internal shunt and solder stop dimples
1452013014060206/06/13 Power semiconductor package with conductive clip
1462013014068406/06/13 Semiconductor device assembly utilizing a dbc substrate
1472013014070106/06/13 Solderable contact and passivation for semiconductor dies
1482013014339906/06/13 Method for forming a reliable solderable contact
1492013013443705/30/13 Method for forming gallium nitride devices with conductive regions
1502013013452405/30/13 Multi-transistor exposed conductive clip for semiconductor packages
1512013012689505/23/13 Gallium nitride devices with vias
1522013011299005/09/13 Gallium nitride devices with compositionally-graded transition layer
1532013011574605/09/13 Method for fabricating a vertical ldmos device
1542013010581405/02/13 Active area shaping for iii-nitride devices
1552013010595805/02/13 Compact wirebonded power quad flat no-lead (pqfn) package
1562013009957904/25/13 System and providing active power balancing
1572013009335604/18/13 Flyback driver for use in a flyback power converter and related method
1582013007631103/28/13 System for actively managing energy banks during energy transfer and related method
1592013006920803/21/13 Group iii-v device structure having a selectively reduced impurity concentration
1602013004907902/28/13 Small-outline package for a power transistor
1612013004981602/28/13 Power saving resonant gate driver and related method
1622013002682201/31/13 Energy storage system and related method
1632013001549501/17/13 Stacked half-bridge power module
1642013001549901/17/13 Composite semiconductor device with a soi substrate having an integrated diode
1652013001550101/17/13 Nested composite diode
1662013001590501/17/13 Nested composite switch
1672013000164801/03/13 Gated algan/gan schottky device
1682012031310612/13/12 Enhancement mode group iii-v high electron mobility transistor (hemt) and fabrication
1692012031437212/13/12 Power semiconductor package with double-sided cooling
1702012030607212/06/12 Semiconductor wafer with reduced thickness variation and fabricating same
1712012029275211/22/12 Thermally enhanced semiconductor package with exposed parallel conductive clip
1722012029275311/22/12 Multi-transistor exposed conductive clip for high power semiconductor packages
1732012029275411/22/12 Common drain exposed conductive clip for high power semiconductor packages
1742012029314711/22/12 Monolithic group iii-v power converter
1752012028024511/08/12 High voltage cascoded iii-nitride rectifier package with stamped leadframe
1762012028024611/08/12 High voltage cascoded iii-nitride rectifier package with etched leadframe
1772012028024711/08/12 High voltage cascoded iii-nitride rectifier package utilizing clips on package support surface
1782012027436611/01/12 Integrated power stage
1792012027512111/01/12 Power module with press-fit clamps
1802012026210010/18/12 Bondwireless power module with three-dimensional current routing
1812012025618810/11/12 Stacked composite device including a group iii-v transistor and a group iv lateral transistor
1822012025618910/11/12 Stacked composite device including a group iii-v transistor and a group iv vertical transistor
1832012025619010/11/12 Stacked composite device including a group iii-v transistor and a group iv diode
1842012024856410/04/12 Dual compartment semiconductor package with temperature sensor
1852012024175609/27/12 High voltage composite semiconductor device with protection for a low voltage device
1862012024181909/27/12 Composite semiconductor device with turn-on prevention control
1872012024182009/27/12 Iii-nitride transistor with passive oscillation prevention
1882012023520909/20/12 High voltage rectifier and switching circuits
1892012022917609/13/12 Integrated semiconductor device
1902012022332109/06/12 Iii-nitride transistor stacked with fet in a package
1912012022332209/06/12 Iii-nitride transistor stacked with diode in a package
1922012022332709/06/12 Programmable gate iii-nitride semiconductor device
1932012022336509/06/12 Iii-nitride semiconductor structures with strain absorbing interlayer transition modules
1942012022341509/06/12 Igbt power semiconductor package having a conductive clip
1952012021182508/23/12 Trench mosfet and fabricating same
1962012020027508/09/12 Integrated high-voltage power supply start-up circuit
1972012020054708/09/12 Gate driver with multiple slopes for plasma display panels
1982012019417008/02/12 Load detection for switched-mode power converters
1992012018792807/26/12 Synchronous buck converter including multi-mode control for light load efficiency and related method
2002012018162407/19/12 Stacked half-bridge package with a common conductive clip
2012012018167407/19/12 Stacked half-bridge package with a common conductive leadframe
2022012018168107/19/12 Stacked half-bridge package with a current carrying layer
2032012017568807/12/12 Semiconductor package with reduced on-resistance and top metal spreading resistance with application to power transistor packaging
2042012016892207/05/12 High power semiconductor package with conductive clip
2052012016892307/05/12 High power semiconductor package with conductive clip on multiple transistors
2062012016892407/05/12 High power semiconductor package with multiple conductive clips
2072012016892507/05/12 High power semiconductor package with conductive clips and flip chip driver ic
2082012016892607/05/12 High power semiconductor package with conductive clip and flip chip driver ic with integrated control transistor
2092012015335106/21/12 Stress modulated group iii-v semiconductor device and related method
2102012014620506/14/12 Multi-chip module (mcm) power quad flat no-lead (pqfn) semiconductor package utilizing a leadframe for electrical interconnections
2112012011922305/17/12 Gallium nitride semiconductor structures with compositionally-graded transition layer
2122012010458705/03/12 Direct contact semiconductor package with power transistor
2132012010458605/03/12 Direct contact flip chip package with power transistors
2142012009147004/19/12 Programmable gate iii-nitride power transistor
2152012006819003/22/12 Gallium nitride devices with electrically conductive regions
2162012007096703/22/12 Method for forming gallium nitride devices with conductive regions
2172012006172503/15/12 Power semiconductor package
2182012006219903/15/12 Iii-nitride power converter circuit
2192012006228103/15/12 Power converter with split power supply
2202012004980103/01/12 Dynamic power management system and method
2212012004983303/01/12 Smart photovoltaic panel and regulating power using same
2222012004355302/23/12 Hybrid semiconductor device having a gan transistor and a silicon mosfet
2232012002571302/02/12 System using shunt circuits to selectively bypass open loads
2242011031608612/29/11 Wafer scale package for high power devices
2252011028486211/24/11 Iii-nitride switching device with an emulated diode
2262011028486811/24/11 High voltage iii-nitride transistor
2272011028486911/24/11 High voltage durability iii-nitride hemt
2282011028495011/24/11 Method for fabricating a shallow and narrow trench fetand related structures
2292011027871011/17/11 Direct contact leadless package
2302011027871111/17/11 Leadless package for high current devices
2312011027270511/10/11 Interdigitated conductive support for gan semiconductor die
2322011027275911/10/11 Vertical ldmos device and fabricating same
2332011027518311/10/11 Enhancement mode iii-nitride fet
2342011026032210/27/11 "semiconductor on semiconductor substrate multi-chip-scale package"
2352011026066810/27/11 Low frequency drive control circuit and driving an inductive load
2362011024101910/06/11 Iii-nitride power semiconductor device
2372011024467110/06/11 Method for fabricating a iii-nitride semiconductor device
2382011022709009/22/11 Programmable iii-nitride transistor with aluminum-doped gate
2392011022709209/22/11 Iii-nitride semiconductor device
2402011022374609/15/11 Method for fabrication of iii-nitride heterojunction semiconductor device
2412011021656309/08/11 Hemt/gan half-bridge circuit
2422011021033709/01/11 Monolithic integration of silicon and group iii-v devices
2432011021033809/01/11 Efficient high voltage switching circuits and monolithic integration of same
2442011019861108/18/11 Iii-nitride power device with solderable front metal
2452011018125207/28/11 Driving circuit for depletion mode semiconductor switches
2462011017555907/21/11 Motor drive based on iii-nitride devices
2472011016337307/07/11 Semiconductor device including a voltage controlled termination structure and fabricating same
2482011015794906/30/11 Highly efficient iii-nitride power conversion circuit
2492011014016906/16/11 Highly conductive source/drain contacts in iii-nitride transistors



ARCHIVE: New 2015 2014 2013 2012 2011 2010 2009



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