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International Rectifier Corporation
International Rectifier Corporation el Segundo Ca
International Rectifier Corporation_20100107

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International Rectifier Corporation patents


      
Recent patent applications related to International Rectifier Corporation. International Rectifier Corporation is listed as an Agent/Assignee. Note: International Rectifier Corporation may have other listings under different names/spellings. We're not affiliated with International Rectifier Corporation, we're just tracking patents.

ARCHIVE: New 2014 2013 2012 2011 2010 2009 | Company Directory "I" | International Rectifier Corporation-related inventors



International Rectifier

Delamination and crack prevention in iii-nitride wafers

Search recent Press Releases: International Rectifier Corporation-related press releases
Count Application # Date International Rectifier Corporation patents (updated weekly) - BOOKMARK this page
12014026437309/18/14 new patent  Iii-nitride heterojunction device
22014025237509/11/14Delamination and crack prevention in iii-nitride wafers
32014025321709/11/14Rf switch gate control
42014023934908/28/14Drain pad having a reduced termination electric field
52014022440908/14/14Sintering utilizing non-mechanical pressure
62014022516208/14/14Integrated half-bridge circuit with low side and high side composite switches
72014022516308/14/14Inverter circuit including short circuit protected composite switch
82014021009207/31/14Refractory metal nitride capped contact
92014021051907/31/14Combined sense signal generation and detection
102014021076807/31/14Single layer touch sensor
112014021304607/31/14Fabrication of iii-nitride layers
122014020329407/24/14Gallium nitride devices
132014020329507/24/14Integrated power device with iii-nitride half bridges
142014020341907/24/14Half-bridge package with a conductive clip
152014019746107/17/14Semiconductor structure including a spatially confined dielectric region
162014019746207/17/14Iii-nitride transistor with high resistivity substrate
172014019133707/10/14Stacked half-bridge package
182014019244107/10/14Dc/dc converter with iii-nitride switches
192014017563006/26/14Semiconductor package with multiple conductive clips
202014016711206/19/14Cascode circuit integration of group iii-n and group iv devices
212014016715206/19/14Reduced gate charge trench field-effect transistor
222014016715306/19/14Trench fet having merged gate dielectric
232014016905206/19/14Iii-nitride power conversion circuit
242014015911606/12/14Iii-nitride device having an enhanced field plate
252014014799805/29/14Ion implantation at high temperature surface equilibrium conditions
262014013165905/15/14Gallium nitride devices with aluminum nitride intermediate layer
272014013170905/15/14Semiconductor package with temperature sensor
282014013176705/15/14Dual compartment semiconductor package
292014013165905/15/14Gallium nitride devices with aluminum nitride intermediate layer
302014013170905/15/14Semiconductor package with temperature sensor
312014013176705/15/14Dual compartment semiconductor package
322014012489005/08/14Semiconductor package having multi-phase power inverter with internal temperature sensor
332014012625605/08/14Semiconductor package having an over-temperature protection circuit utilizing multiple temperature threshold values
342014012786105/08/14Semiconductor packages utilizing leadframe panels with grooves in connecting bars
352014012489005/08/14Semiconductor package having multi-phase power inverter with internal temperature sensor
362014012625605/08/14Semiconductor package having an over-temperature protection circuit utilizing multiple temperature threshold values
372014012786105/08/14Semiconductor packages utilizing leadframe panels with grooves in connecting bars
382014011751705/01/14Power quad flat no-lead (pqfn) package having control and driver circuits
392014011751805/01/14Control and driver circuits on a power quad flat no-lead (pqfn) leadframe
402014011803205/01/14Buck converter power package
412014011751705/01/14Power quad flat no-lead (pqfn) package having control and driver circuits
422014011751805/01/14Control and driver circuits on a power quad flat no-lead (pqfn) leadframe
432014011803205/01/14Buck converter power package
442014011077604/24/14Semiconductor package including conductive carrier coupled power switches
452014011078804/24/14Power converter package including top-drain configured power fet
462014011079604/24/14Semiconductor package with conductive carrier integrated heat spreader
472014011086304/24/14Power converter package including vertically stacked driver ic
482014011077604/24/14Semiconductor package including conductive carrier coupled power switches
492014011078804/24/14Power converter package including top-drain configured power fet
502014011079604/24/14Semiconductor package with conductive carrier integrated heat spreader
512014011086304/24/14Power converter package including vertically stacked driver ic
522014010339304/17/14Surface mountable power components
532014010351404/17/14Power quad flat no-lead (pqfn) package having bootstrap diodes on a common integrated circuit (ic)
542014010654804/17/14Fabrication of iii-nitride semiconductor device and related structures
552014010339304/17/14Surface mountable power components
562014010351404/17/14Power quad flat no-lead (pqfn) package having bootstrap diodes on a common integrated circuit (ic)
572014010654804/17/14Fabrication of iii-nitride semiconductor device and related structures
582014009744604/10/14Gallium nitride devices with gallium nitride alloy intermediate layer
592014009747104/10/14Active area shaping of iii-nitride devices utilizing a field plate defined by a dielectric body
602014009749804/10/14Open source power quad flat no-lead (pqfn) leadframe
612014009753104/10/14Power quad flat no-lead (pqfn) package in a single shunt inverter circuit
622014009744604/10/14Gallium nitride devices with gallium nitride alloy intermediate layer
632014009747104/10/14Active area shaping of iii-nitride devices utilizing a field plate defined by a dielectric body
642014009749804/10/14Open source power quad flat no-lead (pqfn) leadframe
652014009753104/10/14Power quad flat no-lead (pqfn) package in a single shunt inverter circuit
662014009744604/10/14Gallium nitride devices with gallium nitride alloy intermediate layer
672014009747104/10/14Active area shaping of iii-nitride devices utilizing a field plate defined by a dielectric body
682014009749804/10/14Open source power quad flat no-lead (pqfn) leadframe
692014009753104/10/14Power quad flat no-lead (pqfn) package in a single shunt inverter circuit
702014009144904/03/14Power quad flat no-lead (pqfn) semiconductor package with leadframe islands for multi-phase power inverter
712014009144904/03/14Power quad flat no-lead (pqfn) semiconductor package with leadframe islands for multi-phase power inverter
722014008443103/27/14Semiconductor package with heat spreader
732014008443103/27/14Semiconductor package with heat spreader
742014007722203/20/14Gallium nitride devices with aluminum nitride alloy intermediate layer
752014007722203/20/14Gallium nitride devices with aluminum nitride alloy intermediate layer
762014007027803/13/14Active area shaping of iii-nitride devices utilizing multiple dielectric materials
772014007027903/13/14Active area shaping of iii-nitride devices utilizing a source-side field plate and a wider drain-side field plate
782014007028003/13/14Active area shaping of iii-nitride devices utilizing steps of source-side and drain-side field plates
792014007062703/13/14Integrated group iii-v power stage
802014007078603/13/14Power converter including integrated driver providing overcurrent protection
812014007027803/13/14Active area shaping of iii-nitride devices utilizing multiple dielectric materials
822014007027903/13/14Active area shaping of iii-nitride devices utilizing a source-side field plate and a wider drain-side field plate
832014007028003/13/14Active area shaping of iii-nitride devices utilizing steps of source-side and drain-side field plates
842014007062703/13/14Integrated group iii-v power stage
852014007078603/13/14Power converter including integrated driver providing overcurrent protection
862014006188503/06/14Power quad flat no-lead (pqfn) package
872014006188503/06/14Power quad flat no-lead (pqfn) package
882014005460702/27/14Group iii-v device with strain-relieving layers
892014005510902/27/14Power converter including integrated driver for depletion mode group iii-v transistor
902014004892302/20/14Semiconductor package for high power devices
912014003495902/06/14Iii-nitride semiconductor device with stepped gate
922014003500502/06/14Monolithic integrated group iii-v and group iv device
932014003839102/06/14Iii-nitride wafer fabrication
942014002836901/30/14Level shifter utilizing bidirectional signaling through a capacitive isolation barrier
952014003085401/30/14High voltage cascoded iii-nitride rectifier package
962014003085801/30/14Enhancement mode iii-nitride device
972014000866301/09/14Integrated composite group iii-v and group iv semiconductor device
982014000161401/02/14Thermally enhanced semiconductor package
992013033457412/19/13Monolithic integrated composite group iii-v and group iv device
1002013033761112/19/13Thermally enhanced semiconductor package with conductive clip
1012013033762612/19/13Monolithic group iii-v and group iv device
1022013031652711/28/13Multi-chip-scale package
1032013029987711/14/13Integrated iii-nitride and silicon device
1042013027736210/24/13Power converter with over-voltage protection
1052013027771110/24/13Oscillation free fast-recovery diode
1062013027818110/24/13Reverse rotation of a motor configured for operation in a forward direction
1072013027120110/17/13System on chip for power inverter
1082013026457910/10/13Iii-nitride heterojunction device
1092013026463610/10/13Trench fet with ruggedness enhancement regions
1102013026496810/10/13Power converter having an advanced control ic
1112013025674410/03/13Igbt with buried emitter electrode
1122013025674510/03/13Deep gate trench igbt
1132013025680710/03/13Integrated dual power converter package having internal driver ic
1142013025685910/03/13Dual power converter package using external driver ic
1152013025689410/03/13Porous metallic film as die attach and interconnect
1162013025690510/03/13Monolithic power converter package with through substrate vias
1172013024888409/26/13Iii-nitride power device
1182013024907209/26/13Direct contact package for power transistors
1192013024950809/26/13Voltage regulator having an emulated ripple generator
1202013024089809/19/13Group iii-v and group iv composite switch
1212013024091109/19/13Iii-nitride multi-channel heterojunction device
1222013023420809/12/13Composite semiconductor device with active oscillation prevention
1232013022879409/05/13Stacked half-bridge package with a common leadframe
1242013022912609/05/13Electronic ballast with power factor correction
1252013021428308/22/13Power transistor having segmented gate
1262013021433008/22/13Transistor having increased breakdown voltage
1272013021428308/22/13Power transistor having segmented gate
1282013021433008/22/13Transistor having increased breakdown voltage
1292013020712008/15/13Power device with solderable front metal
1302013020712008/15/13Power device with solderable front metal
1312013019649008/01/13Method and apparatus for growing a iii-nitride layer
1322013019649008/01/13Method and apparatus for growing a iii-nitride layer
1332013018247007/18/13Power module package having a multi-phase inverter and power factor correction
1342013018247007/18/13Power module package having a multi-phase inverter and power factor correction
1352013017554207/11/13Group iii-v and group iv composite diode
1362013017569007/11/13Power semiconductor device with reduced contact resistance
1372013017554207/11/13Group iii-v and group iv composite diode
1382013017569007/11/13Power semiconductor device with reduced contact resistance
1392013016180306/27/13Semiconductor package with conductive heat spreader
1402013016180306/27/13Semiconductor package with conductive heat spreader
1412013014701606/13/13Semiconductor package having internal shunt and solder stop dimples
1422013014701606/13/13Semiconductor package having internal shunt and solder stop dimples
1432013014060206/06/13Power semiconductor package with conductive clip
1442013014068406/06/13Semiconductor device assembly utilizing a dbc substrate
1452013014070106/06/13Solderable contact and passivation for semiconductor dies
1462013014339906/06/13Method for forming a reliable solderable contact
1472013014060206/06/13Power semiconductor package with conductive clip
1482013014068406/06/13Semiconductor device assembly utilizing a dbc substrate
1492013014070106/06/13Solderable contact and passivation for semiconductor dies
1502013014339906/06/13Method for forming a reliable solderable contact
1512013013443705/30/13Method for forming gallium nitride devices with conductive regions
1522013013452405/30/13Multi-transistor exposed conductive clip for semiconductor packages
1532013013443705/30/13Method for forming gallium nitride devices with conductive regions
1542013013452405/30/13Multi-transistor exposed conductive clip for semiconductor packages
1552013012689505/23/13Gallium nitride devices with vias
1562013012689505/23/13Gallium nitride devices with vias
1572013011299005/09/13Gallium nitride devices with compositionally-graded transition layer
1582013011574605/09/13Method for fabricating a vertical ldmos device
1592013011299005/09/13Gallium nitride devices with compositionally-graded transition layer
1602013011574605/09/13Method for fabricating a vertical ldmos device
1612013010581405/02/13Active area shaping for iii-nitride devices
1622013010595805/02/13Compact wirebonded power quad flat no-lead (pqfn) package
1632013010581405/02/13Active area shaping for iii-nitride devices
1642013010595805/02/13Compact wirebonded power quad flat no-lead (pqfn) package
1652013009957904/25/13System and method for providing active power balancing
1662013009335604/18/13Flyback driver for use in a flyback power converter and related method
1672013007631103/28/13System for actively managing energy banks during energy transfer and related method
1682013006920803/21/13Group iii-v device structure having a selectively reduced impurity concentration
1692013004907902/28/13Small-outline package for a power transistor
1702013004981602/28/13Power saving resonant gate driver and related method
1712013002682201/31/13Energy storage system and related method
1722013001549501/17/13Stacked half-bridge power module
1732013001549901/17/13Composite semiconductor device with a soi substrate having an integrated diode
1742013001550101/17/13Nested composite diode
1752013001590501/17/13Nested composite switch
1762013000164801/03/13Gated algan/gan schottky device
1772012031310612/13/12Enhancement mode group iii-v high electron mobility transistor (hemt) and method for fabrication
1782012031437212/13/12Power semiconductor package with double-sided cooling
1792012030607212/06/12Semiconductor wafer with reduced thickness variation and method for fabricating same
1802012029275211/22/12Thermally enhanced semiconductor package with exposed parallel conductive clip
1812012029275311/22/12Multi-transistor exposed conductive clip for high power semiconductor packages
1822012029275411/22/12Common drain exposed conductive clip for high power semiconductor packages
1832012029314711/22/12Monolithic group iii-v power converter
1842012028024511/08/12High voltage cascoded iii-nitride rectifier package with stamped leadframe
1852012028024611/08/12High voltage cascoded iii-nitride rectifier package with etched leadframe
1862012028024711/08/12High voltage cascoded iii-nitride rectifier package utilizing clips on package support surface
1872012027436611/01/12Integrated power stage
1882012027512111/01/12Power module with press-fit clamps
1892012026210010/18/12Bondwireless power module with three-dimensional current routing
1902012025618810/11/12Stacked composite device including a group iii-v transistor and a group iv lateral transistor
1912012025618910/11/12Stacked composite device including a group iii-v transistor and a group iv vertical transistor
1922012025619010/11/12Stacked composite device including a group iii-v transistor and a group iv diode
1932012024856410/04/12Dual compartment semiconductor package with temperature sensor
1942012024175609/27/12High voltage composite semiconductor device with protection for a low voltage device
1952012024181909/27/12Composite semiconductor device with turn-on prevention control
1962012024182009/27/12Iii-nitride transistor with passive oscillation prevention
1972012023520909/20/12High voltage rectifier and switching circuits
1982012022917609/13/12Integrated semiconductor device
1992012022332109/06/12Iii-nitride transistor stacked with fet in a package
2002012022332209/06/12Iii-nitride transistor stacked with diode in a package
2012012022332709/06/12Programmable gate iii-nitride semiconductor device
2022012022336509/06/12Iii-nitride semiconductor structures with strain absorbing interlayer transition modules
2032012022341509/06/12Igbt power semiconductor package having a conductive clip
2042012021182508/23/12Trench mosfet and method for fabricating same
2052012020027508/09/12Integrated high-voltage power supply start-up circuit
2062012020054708/09/12Gate driver with multiple slopes for plasma display panels
2072012019417008/02/12Load detection for switched-mode power converters
2082012018792807/26/12Synchronous buck converter including multi-mode control for light load efficiency and related method
2092012018162407/19/12Stacked half-bridge package with a common conductive clip
2102012018167407/19/12Stacked half-bridge package with a common conductive leadframe
2112012018168107/19/12Stacked half-bridge package with a current carrying layer
2122012017568807/12/12Semiconductor package with reduced on-resistance and top metal spreading resistance with application to power transistor packaging
2132012016892207/05/12High power semiconductor package with conductive clip
2142012016892307/05/12High power semiconductor package with conductive clip on multiple transistors
2152012016892407/05/12High power semiconductor package with multiple conductive clips
2162012016892507/05/12High power semiconductor package with conductive clips and flip chip driver ic
2172012016892607/05/12High power semiconductor package with conductive clip and flip chip driver ic with integrated control transistor
2182012015335106/21/12Stress modulated group iii-v semiconductor device and related method
2192012014620506/14/12Multi-chip module (mcm) power quad flat no-lead (pqfn) semiconductor package utilizing a leadframe for electrical interconnections
2202012011922305/17/12Gallium nitride semiconductor structures with compositionally-graded transition layer
2212012010458705/03/12Direct contact semiconductor package with power transistor
2222012010458605/03/12Direct contact flip chip package with power transistors
2232012009147004/19/12Programmable gate iii-nitride power transistor
2242012006819003/22/12Gallium nitride devices with electrically conductive regions
2252012007096703/22/12Method for forming gallium nitride devices with conductive regions
2262012006172503/15/12Power semiconductor package
2272012006219903/15/12Iii-nitride power converter circuit
2282012006228103/15/12Power converter with split power supply
2292012004980103/01/12Dynamic power management system and method
2302012004983303/01/12Smart photovoltaic panel and method for regulating power using same
2312012004355302/23/12Hybrid semiconductor device having a gan transistor and a silicon mosfet
2322012002571302/02/12System using shunt circuits to selectively bypass open loads
2332011031608612/29/11Wafer scale package for high power devices
2342011028486211/24/11Iii-nitride switching device with an emulated diode
2352011028486811/24/11High voltage iii-nitride transistor
2362011028486911/24/11High voltage durability iii-nitride hemt
2372011028495011/24/11Method for fabricating a shallow and narrow trench fetand related structures
2382011027871011/17/11Direct contact leadless package
2392011027871111/17/11Leadless package for high current devices
2402011027270511/10/11Interdigitated conductive support for gan semiconductor die
2412011027275911/10/11Vertical ldmos device and method for fabricating same
2422011027518311/10/11Enhancement mode iii-nitride fet
2432011026032210/27/11"semiconductor on semiconductor substrate multi-chip-scale package"
2442011026066810/27/11Low frequency drive control circuit and method for driving an inductive load
2452011024101910/06/11Iii-nitride power semiconductor device
2462011024467110/06/11Method for fabricating a iii-nitride semiconductor device
2472011022709009/22/11Programmable iii-nitride transistor with aluminum-doped gate
2482011022709209/22/11Iii-nitride semiconductor device
2492011022374609/15/11Method for fabrication of iii-nitride heterojunction semiconductor device


ARCHIVE: New 2014 2013 2012 2011 2010 2009



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This listing is an abstract for educational and research purposes is only meant as a recent sample of applications filed, not a comprehensive history. Freshpatents.com is not affiliated or associated with International Rectifier Corporation in any way and there may be associated servicemarks. This data is also published to the public by the USPTO and available for free on their website. Note that there may be alternative spellings for International Rectifier Corporation with additional patents listed. Browse our Agent directory for other possible listings. Page by FreshPatents.com

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