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International Rectifier Corporation
International Rectifier Corporation el Segundo Ca
International Rectifier Corporation_20100107

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International Rectifier Corporation patents


      
Recent patent applications related to International Rectifier Corporation. International Rectifier Corporation is listed as an Agent/Assignee. Note: International Rectifier Corporation may have other listings under different names/spellings. We're not affiliated with International Rectifier Corporation, we're just tracking patents.

ARCHIVE: New 2015 2014 2013 2012 2011 2010 2009 | Company Directory "I" | International Rectifier Corporation-related inventors


High performance iii-nitride power device

International Rectifier

High performance iii-nitride power device

Power semiconductor package with integrated heat spreader and partially etched conductive carrier

International Rectifier

Power semiconductor package with integrated heat spreader and partially etched conductive carrier

Power converter package with an integrated output inductor

International Rectifier

Power converter package with an integrated output inductor

Search recent Press Releases: International Rectifier Corporation-related press releases
Count Application # Date International Rectifier Corporation patents (updated weekly) - BOOKMARK this page
12015018788007/02/15 new patent  Semiconductor structure with compositionally-graded transition layer
22015017117206/18/15High performance iii-nitride power device
32015016226106/11/15Power semiconductor package with integrated heat spreader and partially etched conductive carrier
42015016229706/11/15Power converter package with an integrated output inductor
52015016230306/11/15Array based fabrication of power semiconductor package with integrated heat spreader
62015016232106/11/15Composite power device with esd protection clamp
72015016283206/11/15Group iii-v voltage converter with monolithically integrated level shifter, high side driver, and high side power switch
82015015527506/04/15Enhancement mode iii-nitride switch
92015015535806/04/15Group iii-v transistor with semiconductor field plate
102015013714105/21/15Gallium nitride devices
112015013003605/14/15Semiconductor package with low profile switch node integrated heat spreader
122015013293305/14/15Iii-nitride semiconductor device fabrication
132015012363005/07/15Voltage converter with vcc-less rdson current sensing circuit
142015011532704/30/15Group iii-v device including a buffer termination body
152015011591104/30/15Adaptive off time control scheme for semi-resonant and hybrid converters
162015010849504/23/15Gallium nitride devices with discontinuously graded transition layer
172015009719604/09/15Integrated device including silicon and iii-nitride semiconductor devices
182015007707403/19/15Circuit and producing an average output inductor current indicator
192015005456402/26/15Level shifter utilizing a capacitive isolation barrier
202015003512002/05/15Wafer scale package for high power devices
212015003796502/05/15Fabrication of iii-nitride semiconductor device and related structures
222015002161901/22/15Iii-nitride semiconductor device with reduced electric field between gate and drain
232015001469801/15/15Integrated iii-nitride d-mode hfet with cascoded pair half bridge
242015001470101/15/15Iii-nitride semiconductor device with reduced electric field
252015001470301/15/15Iii-nitride device with solderable front metal
262015001474001/15/15Monolithic composite iii-nitride transistor with high voltage group iv enable switch
272015000844501/08/15Iii-nitride device and fet in a package
282015000857201/08/15Power semiconductor package with multiple dies
292015000159901/01/15Power semiconductor package with non-contiguous, multi-section conductive carrier
302015000172201/01/15Semiconductor device with reduced contact resistance
312014037482512/25/14Power semiconductor device with contiguous gate trenches and offset source trenches
322014037524212/25/14Depletion mode group iii-v transistor with high voltage group iv enable switch
332014036774412/18/14Monolithic integrated composite group iii-v and group iv semiconductor device and ic
342014035368012/04/14Gallium nitride semiconductor structures with compositionally-graded transition layer
352014035372312/04/14High voltage durability iii-nitride device
362014033965111/20/14Semiconductor device with a field plate double trench having a thick bottom dielectric
372014033966911/20/14Semiconductor device with a field plate trench having a thick bottom dielectric
382014033967011/20/14Semiconductor device with a thick bottom field plate trench having a single dielectric and angled sidewalls
392014033968611/20/14Group iii-v device with a selectively modified impurity concentration
402014033287911/13/14Power semiconductor device with reduced on-resistance and increased breakdown voltage
412014031966510/30/14Power semiconductor package
422014026437309/18/14Iii-nitride heterojunction device
432014025237509/11/14Delamination and crack prevention in iii-nitride wafers
442014025321709/11/14Rf switch gate control
452014023934908/28/14Drain pad having a reduced termination electric field
462014022440908/14/14Sintering utilizing non-mechanical pressure
472014022516208/14/14Integrated half-bridge circuit with low side and high side composite switches
482014022516308/14/14Inverter circuit including short circuit protected composite switch
492014021009207/31/14Refractory metal nitride capped contact
502014021051907/31/14Combined sense signal generation and detection
512014021076807/31/14Single layer touch sensor
522014021304607/31/14Fabrication of iii-nitride layers
532014020329407/24/14Gallium nitride devices
542014020329507/24/14Integrated power device with iii-nitride half bridges
552014020341907/24/14Half-bridge package with a conductive clip
562014019746107/17/14Semiconductor structure including a spatially confined dielectric region
572014019746207/17/14Iii-nitride transistor with high resistivity substrate
582014019133707/10/14Stacked half-bridge package
592014019244107/10/14Dc/dc converter with iii-nitride switches
602014017563006/26/14Semiconductor package with multiple conductive clips
612014016711206/19/14Cascode circuit integration of group iii-n and group iv devices
622014016715206/19/14Reduced gate charge trench field-effect transistor
632014016715306/19/14Trench fet having merged gate dielectric
642014016905206/19/14Iii-nitride power conversion circuit
652014015911606/12/14Iii-nitride device having an enhanced field plate
662014014799805/29/14Ion implantation at high temperature surface equilibrium conditions
672014013165905/15/14Gallium nitride devices with aluminum nitride intermediate layer
682014013170905/15/14Semiconductor package with temperature sensor
692014013176705/15/14Dual compartment semiconductor package
702014012489005/08/14Semiconductor package having multi-phase power inverter with internal temperature sensor
712014012625605/08/14Semiconductor package having an over-temperature protection circuit utilizing multiple temperature threshold values
722014012786105/08/14Semiconductor packages utilizing leadframe panels with grooves in connecting bars
732014011751705/01/14Power quad flat no-lead (pqfn) package having control and driver circuits
742014011751805/01/14Control and driver circuits on a power quad flat no-lead (pqfn) leadframe
752014011803205/01/14Buck converter power package
762014011077604/24/14Semiconductor package including conductive carrier coupled power switches
772014011078804/24/14Power converter package including top-drain configured power fet
782014011079604/24/14Semiconductor package with conductive carrier integrated heat spreader
792014011086304/24/14Power converter package including vertically stacked driver ic
802014010339304/17/14Surface mountable power components
812014010351404/17/14Power quad flat no-lead (pqfn) package having bootstrap diodes on a common integrated circuit (ic)
822014010654804/17/14Fabrication of iii-nitride semiconductor device and related structures
832014009744604/10/14Gallium nitride devices with gallium nitride alloy intermediate layer
842014009747104/10/14Active area shaping of iii-nitride devices utilizing a field plate defined by a dielectric body
852014009749804/10/14Open source power quad flat no-lead (pqfn) leadframe
862014009753104/10/14Power quad flat no-lead (pqfn) package in a single shunt inverter circuit
872014009144904/03/14Power quad flat no-lead (pqfn) semiconductor package with leadframe islands for multi-phase power inverter
882014008443103/27/14Semiconductor package with heat spreader
892014007722203/20/14Gallium nitride devices with aluminum nitride alloy intermediate layer
902014007027803/13/14Active area shaping of iii-nitride devices utilizing multiple dielectric materials
912014007027903/13/14Active area shaping of iii-nitride devices utilizing a source-side field plate and a wider drain-side field plate
922014007028003/13/14Active area shaping of iii-nitride devices utilizing steps of source-side and drain-side field plates
932014007062703/13/14Integrated group iii-v power stage
942014007078603/13/14Power converter including integrated driver providing overcurrent protection
952014006188503/06/14Power quad flat no-lead (pqfn) package
962014005460702/27/14Group iii-v device with strain-relieving layers
972014005510902/27/14Power converter including integrated driver for depletion mode group iii-v transistor
982014004892302/20/14Semiconductor package for high power devices
992014003495902/06/14Iii-nitride semiconductor device with stepped gate
1002014003500502/06/14Monolithic integrated group iii-v and group iv device
1012014003839102/06/14Iii-nitride wafer fabrication
1022014002836901/30/14Level shifter utilizing bidirectional signaling through a capacitive isolation barrier
1032014003085401/30/14High voltage cascoded iii-nitride rectifier package
1042014003085801/30/14Enhancement mode iii-nitride device
1052014000866301/09/14Integrated composite group iii-v and group iv semiconductor device
1062014000161401/02/14Thermally enhanced semiconductor package
1072013033457412/19/13Monolithic integrated composite group iii-v and group iv device
1082013033761112/19/13Thermally enhanced semiconductor package with conductive clip
1092013033762612/19/13Monolithic group iii-v and group iv device
1102013031652711/28/13Multi-chip-scale package
1112013029987711/14/13Integrated iii-nitride and silicon device
1122013027736210/24/13Power converter with over-voltage protection
1132013027771110/24/13Oscillation free fast-recovery diode
1142013027818110/24/13Reverse rotation of a motor configured for operation in a forward direction
1152013027120110/17/13System on chip for power inverter
1162013026457910/10/13Iii-nitride heterojunction device
1172013026463610/10/13Trench fet with ruggedness enhancement regions
1182013026496810/10/13Power converter having an advanced control ic
1192013025674410/03/13Igbt with buried emitter electrode
1202013025674510/03/13Deep gate trench igbt
1212013025680710/03/13Integrated dual power converter package having internal driver ic
1222013025685910/03/13Dual power converter package using external driver ic
1232013025689410/03/13Porous metallic film as die attach and interconnect
1242013025690510/03/13Monolithic power converter package with through substrate vias
1252013024888409/26/13Iii-nitride power device
1262013024907209/26/13Direct contact package for power transistors
1272013024950809/26/13Voltage regulator having an emulated ripple generator
1282013024089809/19/13Group iii-v and group iv composite switch
1292013024091109/19/13Iii-nitride multi-channel heterojunction device
1302013023420809/12/13Composite semiconductor device with active oscillation prevention
1312013022879409/05/13Stacked half-bridge package with a common leadframe
1322013022912609/05/13Electronic ballast with power factor correction
1332013021428308/22/13Power transistor having segmented gate
1342013021433008/22/13Transistor having increased breakdown voltage
1352013020712008/15/13Power device with solderable front metal
1362013019649008/01/13Method and growing a iii-nitride layer
1372013018247007/18/13Power module package having a multi-phase inverter and power factor correction
1382013017554207/11/13Group iii-v and group iv composite diode
1392013017569007/11/13Power semiconductor device with reduced contact resistance
1402013016180306/27/13Semiconductor package with conductive heat spreader
1412013014701606/13/13Semiconductor package having internal shunt and solder stop dimples
1422013014060206/06/13Power semiconductor package with conductive clip
1432013014068406/06/13Semiconductor device assembly utilizing a dbc substrate
1442013014070106/06/13Solderable contact and passivation for semiconductor dies
1452013014339906/06/13Method for forming a reliable solderable contact
1462013013443705/30/13Method for forming gallium nitride devices with conductive regions
1472013013452405/30/13Multi-transistor exposed conductive clip for semiconductor packages
1482013012689505/23/13Gallium nitride devices with vias
1492013011299005/09/13Gallium nitride devices with compositionally-graded transition layer
1502013011574605/09/13Method for fabricating a vertical ldmos device
1512013010581405/02/13Active area shaping for iii-nitride devices
1522013010595805/02/13Compact wirebonded power quad flat no-lead (pqfn) package
1532013009957904/25/13System and providing active power balancing
1542013009335604/18/13Flyback driver for use in a flyback power converter and related method
1552013007631103/28/13System for actively managing energy banks during energy transfer and related method
1562013006920803/21/13Group iii-v device structure having a selectively reduced impurity concentration
1572013004907902/28/13Small-outline package for a power transistor
1582013004981602/28/13Power saving resonant gate driver and related method
1592013002682201/31/13Energy storage system and related method
1602013001549501/17/13Stacked half-bridge power module
1612013001549901/17/13Composite semiconductor device with a soi substrate having an integrated diode
1622013001550101/17/13Nested composite diode
1632013001590501/17/13Nested composite switch
1642013000164801/03/13Gated algan/gan schottky device
1652012031310612/13/12Enhancement mode group iii-v high electron mobility transistor (hemt) and fabrication
1662012031437212/13/12Power semiconductor package with double-sided cooling
1672012030607212/06/12Semiconductor wafer with reduced thickness variation and fabricating same
1682012029275211/22/12Thermally enhanced semiconductor package with exposed parallel conductive clip
1692012029275311/22/12Multi-transistor exposed conductive clip for high power semiconductor packages
1702012029275411/22/12Common drain exposed conductive clip for high power semiconductor packages
1712012029314711/22/12Monolithic group iii-v power converter
1722012028024511/08/12High voltage cascoded iii-nitride rectifier package with stamped leadframe
1732012028024611/08/12High voltage cascoded iii-nitride rectifier package with etched leadframe
1742012028024711/08/12High voltage cascoded iii-nitride rectifier package utilizing clips on package support surface
1752012027436611/01/12Integrated power stage
1762012027512111/01/12Power module with press-fit clamps
1772012026210010/18/12Bondwireless power module with three-dimensional current routing
1782012025618810/11/12Stacked composite device including a group iii-v transistor and a group iv lateral transistor
1792012025618910/11/12Stacked composite device including a group iii-v transistor and a group iv vertical transistor
1802012025619010/11/12Stacked composite device including a group iii-v transistor and a group iv diode
1812012024856410/04/12Dual compartment semiconductor package with temperature sensor
1822012024175609/27/12High voltage composite semiconductor device with protection for a low voltage device
1832012024181909/27/12Composite semiconductor device with turn-on prevention control
1842012024182009/27/12Iii-nitride transistor with passive oscillation prevention
1852012023520909/20/12High voltage rectifier and switching circuits
1862012022917609/13/12Integrated semiconductor device
1872012022332109/06/12Iii-nitride transistor stacked with fet in a package
1882012022332209/06/12Iii-nitride transistor stacked with diode in a package
1892012022332709/06/12Programmable gate iii-nitride semiconductor device
1902012022336509/06/12Iii-nitride semiconductor structures with strain absorbing interlayer transition modules
1912012022341509/06/12Igbt power semiconductor package having a conductive clip
1922012021182508/23/12Trench mosfet and fabricating same
1932012020027508/09/12Integrated high-voltage power supply start-up circuit
1942012020054708/09/12Gate driver with multiple slopes for plasma display panels
1952012019417008/02/12Load detection for switched-mode power converters
1962012018792807/26/12Synchronous buck converter including multi-mode control for light load efficiency and related method
1972012018162407/19/12Stacked half-bridge package with a common conductive clip
1982012018167407/19/12Stacked half-bridge package with a common conductive leadframe
1992012018168107/19/12Stacked half-bridge package with a current carrying layer
2002012017568807/12/12Semiconductor package with reduced on-resistance and top metal spreading resistance with application to power transistor packaging
2012012016892207/05/12High power semiconductor package with conductive clip
2022012016892307/05/12High power semiconductor package with conductive clip on multiple transistors
2032012016892407/05/12High power semiconductor package with multiple conductive clips
2042012016892507/05/12High power semiconductor package with conductive clips and flip chip driver ic
2052012016892607/05/12High power semiconductor package with conductive clip and flip chip driver ic with integrated control transistor
2062012015335106/21/12Stress modulated group iii-v semiconductor device and related method
2072012014620506/14/12Multi-chip module (mcm) power quad flat no-lead (pqfn) semiconductor package utilizing a leadframe for electrical interconnections
2082012011922305/17/12Gallium nitride semiconductor structures with compositionally-graded transition layer
2092012010458705/03/12Direct contact semiconductor package with power transistor
2102012010458605/03/12Direct contact flip chip package with power transistors
2112012009147004/19/12Programmable gate iii-nitride power transistor
2122012006819003/22/12Gallium nitride devices with electrically conductive regions
2132012007096703/22/12Method for forming gallium nitride devices with conductive regions
2142012006172503/15/12Power semiconductor package
2152012006219903/15/12Iii-nitride power converter circuit
2162012006228103/15/12Power converter with split power supply
2172012004980103/01/12Dynamic power management system and method
2182012004983303/01/12Smart photovoltaic panel and regulating power using same
2192012004355302/23/12Hybrid semiconductor device having a gan transistor and a silicon mosfet
2202012002571302/02/12System using shunt circuits to selectively bypass open loads
2212011031608612/29/11Wafer scale package for high power devices
2222011028486211/24/11Iii-nitride switching device with an emulated diode
2232011028486811/24/11High voltage iii-nitride transistor
2242011028486911/24/11High voltage durability iii-nitride hemt
2252011028495011/24/11Method for fabricating a shallow and narrow trench fetand related structures
2262011027871011/17/11Direct contact leadless package
2272011027871111/17/11Leadless package for high current devices
2282011027270511/10/11Interdigitated conductive support for gan semiconductor die
2292011027275911/10/11Vertical ldmos device and fabricating same
2302011027518311/10/11Enhancement mode iii-nitride fet
2312011026032210/27/11"semiconductor on semiconductor substrate multi-chip-scale package"
2322011026066810/27/11Low frequency drive control circuit and driving an inductive load
2332011024101910/06/11Iii-nitride power semiconductor device
2342011024467110/06/11Method for fabricating a iii-nitride semiconductor device
2352011022709009/22/11Programmable iii-nitride transistor with aluminum-doped gate
2362011022709209/22/11Iii-nitride semiconductor device
2372011022374609/15/11Method for fabrication of iii-nitride heterojunction semiconductor device
2382011021656309/08/11Hemt/gan half-bridge circuit
2392011021033709/01/11Monolithic integration of silicon and group iii-v devices
2402011021033809/01/11Efficient high voltage switching circuits and monolithic integration of same
2412011019861108/18/11Iii-nitride power device with solderable front metal
2422011018125207/28/11Driving circuit for depletion mode semiconductor switches
2432011017555907/21/11Motor drive based on iii-nitride devices
2442011016337307/07/11Semiconductor device including a voltage controlled termination structure and fabricating same
2452011015794906/30/11Highly efficient iii-nitride power conversion circuit
2462011014016906/16/11Highly conductive source/drain contacts in iii-nitride transistors
2472011014017606/16/11Monolithic integrated composite group iii-v and group iv semiconductor device and fabricating same
2482011014351706/16/11Iii-nitride monolithic ic
2492011013325106/09/11Gated algan/gan heterojunction schottky device



ARCHIVE: New 2015 2014 2013 2012 2011 2010 2009



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