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International Rectifier Corporation
International Rectifier Corporation el Segundo Ca
International Rectifier Corporation_20100107

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International Rectifier Corporation patents


      
Recent patent applications related to International Rectifier Corporation. International Rectifier Corporation is listed as an Agent/Assignee. Note: International Rectifier Corporation may have other listings under different names/spellings. We're not affiliated with International Rectifier Corporation, we're just tracking patents.

ARCHIVE: New 2016 2015 2014 2013 2012 2011 2010 2009 | Company Directory "I" | International Rectifier Corporation-related inventors




Count Application # Date International Rectifier Corporation patents (updated weekly) - BOOKMARK this page
12016003632602/04/16 Power supply control and current emulation
22016002027901/21/16 Edge termination using guard rings between recessed field oxide regions
32016002030801/21/16 Edge termination structure having a termination charge region below a recessed field oxide region
42016002069301/21/16 Power converter utilizing a resonant half-bridge and charge pump circuit
52016001316801/14/16 Semiconductor package with integrated semiconductor devices and passive component
62016001316901/14/16 Passive component integrated with semiconductor device in semiconductor package
72016000581601/07/16 Group iii-v transistor with voltage controlled substrate
82016000582101/07/16 Group iii-v lateral transistor with backside contact
92016000584501/07/16 Group iii-v transistor utilizing a substrate having a dielectrically-filled region
102015038049712/31/15 Group iii-v device with a selectively modified impurity concentration
112015038051812/31/15 Fabrication of iii-nitride power device with reduced gate to drain charge
122015037198212/24/15 Composite group iii-v and group iv transistor having a switched substrate
132015037198612/24/15 Group iii-v hemt having a selectably floating substrate
142015037198712/24/15 Group iii-v hemt having a diode controlled substrate
152015035718212/10/15 Fabrication of iii-nitride power semiconductor device
162015035745812/10/15 Iii-nitride device with improved transconductance
172015034888412/03/15 Power semiconductor package with multi-section conductive carrier
182015034888712/03/15 Method for fabricating a semiconductor package with conductive carrier integrated heat spreader
192015034888812/03/15 Semiconductor package with integrated heat spreader
202015034030411/26/15 Power semiconductor package
212015034048311/26/15 Group iii-v device including a shield plate
222015033298811/19/15 Semiconductor package with multiple dies
232015033316511/19/15 Enhancement mode iii-nitride transistor
242015032556611/12/15 Composite device with integrated diode
252015032568511/12/15 Power semiconductor device with low rdson and high breakdown voltage
262015031114510/29/15 Semiconductor package with switch node integrated heat spreader
272015029505410/15/15 Transistor with elevated drain termination
282015028779210/08/15 Iii-nitride based semiconductor structure
292015027982110/01/15 Power semiconductor package with a common conductive clip
302015027994610/01/15 Power semiconductor device with embedded field electrodes
312015027020209/24/15 Semiconductor package with integrated die paddles for power stage
322015027024909/24/15 Semiconductor package with via-coupled power transistors
332015026296009/17/15 Power semiconductor package with conductive clips
342015025537609/10/15 Power semiconductor package
352015025538209/10/15 Semiconductor package with conductive clip
362015025538409/10/15 Electrical connectivity of die to a host substrate
372015023593208/20/15 Compact power quad flat no-lead (pqfn) package
382015022861008/13/15 Semiconductor package including a power stage and integrated output inductor
392015022158808/06/15 Surface mountable power components
402015020743207/23/15 System on chip with power switches
412015020749507/23/15 Power converter with split voltage supply
422015019436907/09/15 Semiconductor package with conductive clips
432015018788007/02/15 Semiconductor structure with compositionally-graded transition layer
442015017117206/18/15 High performance iii-nitride power device
452015016226106/11/15 Power semiconductor package with integrated heat spreader and partially etched conductive carrier
462015016229706/11/15 Power converter package with an integrated output inductor
472015016230306/11/15 Array based fabrication of power semiconductor package with integrated heat spreader
482015016232106/11/15 Composite power device with esd protection clamp
492015016283206/11/15 Group iii-v voltage converter with monolithically integrated level shifter, high side driver, and high side power switch
502015015527506/04/15 Enhancement mode iii-nitride switch
512015015535806/04/15 Group iii-v transistor with semiconductor field plate
522015013714105/21/15 Gallium nitride devices
532015013003605/14/15 Semiconductor package with low profile switch node integrated heat spreader
542015013293305/14/15 Iii-nitride semiconductor device fabrication
552015012363005/07/15 Voltage converter with vcc-less rdson current sensing circuit
562015011532704/30/15 Group iii-v device including a buffer termination body
572015011591104/30/15 Adaptive off time control scheme for semi-resonant and hybrid converters
582015010849504/23/15 Gallium nitride devices with discontinuously graded transition layer
592015009719604/09/15 Integrated device including silicon and iii-nitride semiconductor devices
602015007707403/19/15 Circuit and producing an average output inductor current indicator
612015005456402/26/15 Level shifter utilizing a capacitive isolation barrier
622015003512002/05/15 Wafer scale package for high power devices
632015003796502/05/15 Fabrication of iii-nitride semiconductor device and related structures
642015002161901/22/15 Iii-nitride semiconductor device with reduced electric field between gate and drain
652015001469801/15/15 Integrated iii-nitride d-mode hfet with cascoded pair half bridge
662015001470101/15/15 Iii-nitride semiconductor device with reduced electric field
672015001470301/15/15 Iii-nitride device with solderable front metal
682015001474001/15/15 Monolithic composite iii-nitride transistor with high voltage group iv enable switch
692015000844501/08/15 Iii-nitride device and fet in a package
702015000857201/08/15 Power semiconductor package with multiple dies
712015000159901/01/15 Power semiconductor package with non-contiguous, multi-section conductive carrier
722015000172201/01/15 Semiconductor device with reduced contact resistance
732014037482512/25/14 Power semiconductor device with contiguous gate trenches and offset source trenches
742014037524212/25/14 Depletion mode group iii-v transistor with high voltage group iv enable switch
752014036774412/18/14 Monolithic integrated composite group iii-v and group iv semiconductor device and ic
762014035368012/04/14 Gallium nitride semiconductor structures with compositionally-graded transition layer
772014035372312/04/14 High voltage durability iii-nitride device
782014033965111/20/14 Semiconductor device with a field plate double trench having a thick bottom dielectric
792014033966911/20/14 Semiconductor device with a field plate trench having a thick bottom dielectric
802014033967011/20/14 Semiconductor device with a thick bottom field plate trench having a single dielectric and angled sidewalls
812014033968611/20/14 Group iii-v device with a selectively modified impurity concentration
822014033287911/13/14 Power semiconductor device with reduced on-resistance and increased breakdown voltage
832014031966510/30/14 Power semiconductor package
842014026437309/18/14 Iii-nitride heterojunction device
852014025237509/11/14 Delamination and crack prevention in iii-nitride wafers
862014025321709/11/14 Rf switch gate control
872014023934908/28/14 Drain pad having a reduced termination electric field
882014022440908/14/14 Sintering utilizing non-mechanical pressure
892014022516208/14/14 Integrated half-bridge circuit with low side and high side composite switches
902014022516308/14/14 Inverter circuit including short circuit protected composite switch
912014021009207/31/14 Refractory metal nitride capped contact
922014021051907/31/14 Combined sense signal generation and detection
932014021076807/31/14 Single layer touch sensor
942014021304607/31/14 Fabrication of iii-nitride layers
952014020329407/24/14 Gallium nitride devices
962014020329507/24/14 Integrated power device with iii-nitride half bridges
972014020341907/24/14 Half-bridge package with a conductive clip
982014019746107/17/14 Semiconductor structure including a spatially confined dielectric region
992014019746207/17/14 Iii-nitride transistor with high resistivity substrate
1002014019133707/10/14 Stacked half-bridge package
1012014019244107/10/14 Dc/dc converter with iii-nitride switches
1022014017563006/26/14 Semiconductor package with multiple conductive clips
1032014016711206/19/14 Cascode circuit integration of group iii-n and group iv devices
1042014016715206/19/14 Reduced gate charge trench field-effect transistor
1052014016715306/19/14 Trench fet having merged gate dielectric
1062014016905206/19/14 Iii-nitride power conversion circuit
1072014015911606/12/14 Iii-nitride device having an enhanced field plate
1082014014799805/29/14 Ion implantation at high temperature surface equilibrium conditions
1092014013165905/15/14 Gallium nitride devices with aluminum nitride intermediate layer
1102014013170905/15/14 Semiconductor package with temperature sensor
1112014013176705/15/14 Dual compartment semiconductor package
1122014012489005/08/14 Semiconductor package having multi-phase power inverter with internal temperature sensor
1132014012625605/08/14 Semiconductor package having an over-temperature protection circuit utilizing multiple temperature threshold values
1142014012786105/08/14 Semiconductor packages utilizing leadframe panels with grooves in connecting bars
1152014011751705/01/14 Power quad flat no-lead (pqfn) package having control and driver circuits
1162014011751805/01/14 Control and driver circuits on a power quad flat no-lead (pqfn) leadframe
1172014011803205/01/14 Buck converter power package
1182014011077604/24/14 Semiconductor package including conductive carrier coupled power switches
1192014011078804/24/14 Power converter package including top-drain configured power fet
1202014011079604/24/14 Semiconductor package with conductive carrier integrated heat spreader
1212014011086304/24/14 Power converter package including vertically stacked driver ic
1222014010339304/17/14 Surface mountable power components
1232014010351404/17/14 Power quad flat no-lead (pqfn) package having bootstrap diodes on a common integrated circuit (ic)
1242014010654804/17/14 Fabrication of iii-nitride semiconductor device and related structures
1252014009744604/10/14 Gallium nitride devices with gallium nitride alloy intermediate layer
1262014009747104/10/14 Active area shaping of iii-nitride devices utilizing a field plate defined by a dielectric body
1272014009749804/10/14 Open source power quad flat no-lead (pqfn) leadframe
1282014009753104/10/14 Power quad flat no-lead (pqfn) package in a single shunt inverter circuit
1292014009144904/03/14 Power quad flat no-lead (pqfn) semiconductor package with leadframe islands for multi-phase power inverter
1302014008443103/27/14 Semiconductor package with heat spreader
1312014007722203/20/14 Gallium nitride devices with aluminum nitride alloy intermediate layer
1322014007027803/13/14 Active area shaping of iii-nitride devices utilizing multiple dielectric materials
1332014007027903/13/14 Active area shaping of iii-nitride devices utilizing a source-side field plate and a wider drain-side field plate
1342014007028003/13/14 Active area shaping of iii-nitride devices utilizing steps of source-side and drain-side field plates
1352014007062703/13/14 Integrated group iii-v power stage
1362014007078603/13/14 Power converter including integrated driver providing overcurrent protection
1372014006188503/06/14 Power quad flat no-lead (pqfn) package
1382014005460702/27/14 Group iii-v device with strain-relieving layers
1392014005510902/27/14 Power converter including integrated driver for depletion mode group iii-v transistor
1402014004892302/20/14 Semiconductor package for high power devices
1412014003495902/06/14 Iii-nitride semiconductor device with stepped gate
1422014003500502/06/14 Monolithic integrated group iii-v and group iv device
1432014003839102/06/14 Iii-nitride wafer fabrication
1442014002836901/30/14 Level shifter utilizing bidirectional signaling through a capacitive isolation barrier
1452014003085401/30/14 High voltage cascoded iii-nitride rectifier package
1462014003085801/30/14 Enhancement mode iii-nitride device
1472014000866301/09/14 Integrated composite group iii-v and group iv semiconductor device
1482014000161401/02/14 Thermally enhanced semiconductor package
1492013033457412/19/13 Monolithic integrated composite group iii-v and group iv device
1502013033761112/19/13 Thermally enhanced semiconductor package with conductive clip
1512013033762612/19/13 Monolithic group iii-v and group iv device
1522013031652711/28/13 Multi-chip-scale package
1532013029987711/14/13 Integrated iii-nitride and silicon device
1542013027736210/24/13 Power converter with over-voltage protection
1552013027771110/24/13 Oscillation free fast-recovery diode
1562013027818110/24/13 Reverse rotation of a motor configured for operation in a forward direction
1572013027120110/17/13 System on chip for power inverter
1582013026457910/10/13 Iii-nitride heterojunction device
1592013026463610/10/13 Trench fet with ruggedness enhancement regions
1602013026496810/10/13 Power converter having an advanced control ic
1612013025674410/03/13 Igbt with buried emitter electrode
1622013025674510/03/13 Deep gate trench igbt
1632013025680710/03/13 Integrated dual power converter package having internal driver ic
1642013025685910/03/13 Dual power converter package using external driver ic
1652013025689410/03/13 Porous metallic film as die attach and interconnect
1662013025690510/03/13 Monolithic power converter package with through substrate vias
1672013024888409/26/13 Iii-nitride power device
1682013024907209/26/13 Direct contact package for power transistors
1692013024950809/26/13 Voltage regulator having an emulated ripple generator
1702013024089809/19/13 Group iii-v and group iv composite switch
1712013024091109/19/13 Iii-nitride multi-channel heterojunction device
1722013023420809/12/13 Composite semiconductor device with active oscillation prevention
1732013022879409/05/13 Stacked half-bridge package with a common leadframe
1742013022912609/05/13 Electronic ballast with power factor correction
1752013021428308/22/13 Power transistor having segmented gate
1762013021433008/22/13 Transistor having increased breakdown voltage
1772013020712008/15/13 Power device with solderable front metal
1782013019649008/01/13 Method and growing a iii-nitride layer
1792013018247007/18/13 Power module package having a multi-phase inverter and power factor correction
1802013017554207/11/13 Group iii-v and group iv composite diode
1812013017569007/11/13 Power semiconductor device with reduced contact resistance
1822013016180306/27/13 Semiconductor package with conductive heat spreader
1832013014701606/13/13 Semiconductor package having internal shunt and solder stop dimples
1842013014060206/06/13 Power semiconductor package with conductive clip
1852013014068406/06/13 Semiconductor device assembly utilizing a dbc substrate
1862013014070106/06/13 Solderable contact and passivation for semiconductor dies
1872013014339906/06/13 Method for forming a reliable solderable contact
1882013013443705/30/13 Method for forming gallium nitride devices with conductive regions
1892013013452405/30/13 Multi-transistor exposed conductive clip for semiconductor packages
1902013012689505/23/13 Gallium nitride devices with vias
1912013011299005/09/13 Gallium nitride devices with compositionally-graded transition layer
1922013011574605/09/13 Method for fabricating a vertical ldmos device
1932013010581405/02/13 Active area shaping for iii-nitride devices
1942013010595805/02/13 Compact wirebonded power quad flat no-lead (pqfn) package
1952013009957904/25/13 System and providing active power balancing
1962013009335604/18/13 Flyback driver for use in a flyback power converter and related method
1972013007631103/28/13 System for actively managing energy banks during energy transfer and related method
1982013006920803/21/13 Group iii-v device structure having a selectively reduced impurity concentration
1992013004907902/28/13 Small-outline package for a power transistor
2002013004981602/28/13 Power saving resonant gate driver and related method
2012013002682201/31/13 Energy storage system and related method
2022013001549501/17/13 Stacked half-bridge power module
2032013001549901/17/13 Composite semiconductor device with a soi substrate having an integrated diode
2042013001550101/17/13 Nested composite diode
2052013001590501/17/13 Nested composite switch
2062013000164801/03/13 Gated algan/gan schottky device
2072012031310612/13/12 Enhancement mode group iii-v high electron mobility transistor (hemt) and fabrication
2082012031437212/13/12 Power semiconductor package with double-sided cooling
2092012030607212/06/12 Semiconductor wafer with reduced thickness variation and fabricating same
2102012029275211/22/12 Thermally enhanced semiconductor package with exposed parallel conductive clip
2112012029275311/22/12 Multi-transistor exposed conductive clip for high power semiconductor packages
2122012029275411/22/12 Common drain exposed conductive clip for high power semiconductor packages
2132012029314711/22/12 Monolithic group iii-v power converter
2142012028024511/08/12 High voltage cascoded iii-nitride rectifier package with stamped leadframe
2152012028024611/08/12 High voltage cascoded iii-nitride rectifier package with etched leadframe
2162012028024711/08/12 High voltage cascoded iii-nitride rectifier package utilizing clips on package support surface
2172012027436611/01/12 Integrated power stage
2182012027512111/01/12 Power module with press-fit clamps
2192012026210010/18/12 Bondwireless power module with three-dimensional current routing
2202012025618810/11/12 Stacked composite device including a group iii-v transistor and a group iv lateral transistor
2212012025618910/11/12 Stacked composite device including a group iii-v transistor and a group iv vertical transistor
2222012025619010/11/12 Stacked composite device including a group iii-v transistor and a group iv diode
2232012024856410/04/12 Dual compartment semiconductor package with temperature sensor
2242012024175609/27/12 High voltage composite semiconductor device with protection for a low voltage device
2252012024181909/27/12 Composite semiconductor device with turn-on prevention control
2262012024182009/27/12 Iii-nitride transistor with passive oscillation prevention
2272012023520909/20/12 High voltage rectifier and switching circuits
2282012022917609/13/12 Integrated semiconductor device
2292012022332109/06/12 Iii-nitride transistor stacked with fet in a package
2302012022332209/06/12 Iii-nitride transistor stacked with diode in a package
2312012022332709/06/12 Programmable gate iii-nitride semiconductor device
2322012022336509/06/12 Iii-nitride semiconductor structures with strain absorbing interlayer transition modules
2332012022341509/06/12 Igbt power semiconductor package having a conductive clip
2342012021182508/23/12 Trench mosfet and fabricating same
2352012020027508/09/12 Integrated high-voltage power supply start-up circuit
2362012020054708/09/12 Gate driver with multiple slopes for plasma display panels
2372012019417008/02/12 Load detection for switched-mode power converters
2382012018792807/26/12 Synchronous buck converter including multi-mode control for light load efficiency and related method
2392012018162407/19/12 Stacked half-bridge package with a common conductive clip
2402012018167407/19/12 Stacked half-bridge package with a common conductive leadframe
2412012018168107/19/12 Stacked half-bridge package with a current carrying layer
2422012017568807/12/12 Semiconductor package with reduced on-resistance and top metal spreading resistance with application to power transistor packaging
2432012016892207/05/12 High power semiconductor package with conductive clip
2442012016892307/05/12 High power semiconductor package with conductive clip on multiple transistors
2452012016892407/05/12 High power semiconductor package with multiple conductive clips
2462012016892507/05/12 High power semiconductor package with conductive clips and flip chip driver ic
2472012016892607/05/12 High power semiconductor package with conductive clip and flip chip driver ic with integrated control transistor
2482012015335106/21/12 Stress modulated group iii-v semiconductor device and related method
2492012014620506/14/12 Multi-chip module (mcm) power quad flat no-lead (pqfn) semiconductor package utilizing a leadframe for electrical interconnections



ARCHIVE: New 2016 2015 2014 2013 2012 2011 2010 2009



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