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International Rectifier Corporation
International Rectifier Corporation el Segundo Ca
International Rectifier Corporation_20100107

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International Rectifier Corporation patents


      
Recent patent applications related to International Rectifier Corporation. International Rectifier Corporation is listed as an Agent/Assignee. Note: International Rectifier Corporation may have other listings under different names/spellings. We're not affiliated with International Rectifier Corporation, we're just tracking patents.

ARCHIVE: New 2014 2013 2012 2011 2010 2009 | Company Directory "I" | International Rectifier Corporation-related inventors



International Rectifier

Half-bridge package with a conductive clip

Search recent Press Releases: International Rectifier Corporation-related press releases
Count Application # Date International Rectifier Corporation patents (updated weekly) - BOOKMARK this page
12014020329407/24/14 new patent  Gallium nitride devices
22014020329507/24/14 new patent  Integrated power device with iii-nitride half bridges
32014020341907/24/14 new patent  Half-bridge package with a conductive clip
42014019746107/17/14Semiconductor structure including a spatially confined dielectric region
52014019746207/17/14Iii-nitride transistor with high resistivity substrate
62014019133707/10/14Stacked half-bridge package
72014019244107/10/14Dc/dc converter with iii-nitride switches
82014017563006/26/14Semiconductor package with multiple conductive clips
92014016711206/19/14Cascode circuit integration of group iii-n and group iv devices
102014016715206/19/14Reduced gate charge trench field-effect transistor
112014016715306/19/14Trench fet having merged gate dielectric
122014016905206/19/14Iii-nitride power conversion circuit
132014015911606/12/14Iii-nitride device having an enhanced field plate
142014014799805/29/14Ion implantation at high temperature surface equilibrium conditions
152014013165905/15/14Gallium nitride devices with aluminum nitride intermediate layer
162014013170905/15/14Semiconductor package with temperature sensor
172014013176705/15/14Dual compartment semiconductor package
182014013165905/15/14Gallium nitride devices with aluminum nitride intermediate layer
192014013170905/15/14Semiconductor package with temperature sensor
202014013176705/15/14Dual compartment semiconductor package
212014012489005/08/14Semiconductor package having multi-phase power inverter with internal temperature sensor
222014012625605/08/14Semiconductor package having an over-temperature protection circuit utilizing multiple temperature threshold values
232014012786105/08/14Semiconductor packages utilizing leadframe panels with grooves in connecting bars
242014012489005/08/14Semiconductor package having multi-phase power inverter with internal temperature sensor
252014012625605/08/14Semiconductor package having an over-temperature protection circuit utilizing multiple temperature threshold values
262014012786105/08/14Semiconductor packages utilizing leadframe panels with grooves in connecting bars
272014011751705/01/14Power quad flat no-lead (pqfn) package having control and driver circuits
282014011751805/01/14Control and driver circuits on a power quad flat no-lead (pqfn) leadframe
292014011803205/01/14Buck converter power package
302014011751705/01/14Power quad flat no-lead (pqfn) package having control and driver circuits
312014011751805/01/14Control and driver circuits on a power quad flat no-lead (pqfn) leadframe
322014011803205/01/14Buck converter power package
332014011077604/24/14Semiconductor package including conductive carrier coupled power switches
342014011078804/24/14Power converter package including top-drain configured power fet
352014011079604/24/14Semiconductor package with conductive carrier integrated heat spreader
362014011086304/24/14Power converter package including vertically stacked driver ic
372014011077604/24/14Semiconductor package including conductive carrier coupled power switches
382014011078804/24/14Power converter package including top-drain configured power fet
392014011079604/24/14Semiconductor package with conductive carrier integrated heat spreader
402014011086304/24/14Power converter package including vertically stacked driver ic
412014010339304/17/14Surface mountable power components
422014010351404/17/14Power quad flat no-lead (pqfn) package having bootstrap diodes on a common integrated circuit (ic)
432014010654804/17/14Fabrication of iii-nitride semiconductor device and related structures
442014010339304/17/14Surface mountable power components
452014010351404/17/14Power quad flat no-lead (pqfn) package having bootstrap diodes on a common integrated circuit (ic)
462014010654804/17/14Fabrication of iii-nitride semiconductor device and related structures
472014009744604/10/14Gallium nitride devices with gallium nitride alloy intermediate layer
482014009747104/10/14Active area shaping of iii-nitride devices utilizing a field plate defined by a dielectric body
492014009749804/10/14Open source power quad flat no-lead (pqfn) leadframe
502014009753104/10/14Power quad flat no-lead (pqfn) package in a single shunt inverter circuit
512014009744604/10/14Gallium nitride devices with gallium nitride alloy intermediate layer
522014009747104/10/14Active area shaping of iii-nitride devices utilizing a field plate defined by a dielectric body
532014009749804/10/14Open source power quad flat no-lead (pqfn) leadframe
542014009753104/10/14Power quad flat no-lead (pqfn) package in a single shunt inverter circuit
552014009744604/10/14Gallium nitride devices with gallium nitride alloy intermediate layer
562014009747104/10/14Active area shaping of iii-nitride devices utilizing a field plate defined by a dielectric body
572014009749804/10/14Open source power quad flat no-lead (pqfn) leadframe
582014009753104/10/14Power quad flat no-lead (pqfn) package in a single shunt inverter circuit
592014009144904/03/14Power quad flat no-lead (pqfn) semiconductor package with leadframe islands for multi-phase power inverter
602014009144904/03/14Power quad flat no-lead (pqfn) semiconductor package with leadframe islands for multi-phase power inverter
612014008443103/27/14Semiconductor package with heat spreader
622014008443103/27/14Semiconductor package with heat spreader
632014007722203/20/14Gallium nitride devices with aluminum nitride alloy intermediate layer
642014007722203/20/14Gallium nitride devices with aluminum nitride alloy intermediate layer
652014007027803/13/14Active area shaping of iii-nitride devices utilizing multiple dielectric materials
662014007027903/13/14Active area shaping of iii-nitride devices utilizing a source-side field plate and a wider drain-side field plate
672014007028003/13/14Active area shaping of iii-nitride devices utilizing steps of source-side and drain-side field plates
682014007062703/13/14Integrated group iii-v power stage
692014007078603/13/14Power converter including integrated driver providing overcurrent protection
702014007027803/13/14Active area shaping of iii-nitride devices utilizing multiple dielectric materials
712014007027903/13/14Active area shaping of iii-nitride devices utilizing a source-side field plate and a wider drain-side field plate
722014007028003/13/14Active area shaping of iii-nitride devices utilizing steps of source-side and drain-side field plates
732014007062703/13/14Integrated group iii-v power stage
742014007078603/13/14Power converter including integrated driver providing overcurrent protection
752014006188503/06/14Power quad flat no-lead (pqfn) package
762014006188503/06/14Power quad flat no-lead (pqfn) package
772014005460702/27/14Group iii-v device with strain-relieving layers
782014005510902/27/14Power converter including integrated driver for depletion mode group iii-v transistor
792014004892302/20/14Semiconductor package for high power devices
802014003495902/06/14Iii-nitride semiconductor device with stepped gate
812014003500502/06/14Monolithic integrated group iii-v and group iv device
822014003839102/06/14Iii-nitride wafer fabrication
832014002836901/30/14Level shifter utilizing bidirectional signaling through a capacitive isolation barrier
842014003085401/30/14High voltage cascoded iii-nitride rectifier package
852014003085801/30/14Enhancement mode iii-nitride device
862014000866301/09/14Integrated composite group iii-v and group iv semiconductor device
872014000161401/02/14Thermally enhanced semiconductor package
882013033457412/19/13Monolithic integrated composite group iii-v and group iv device
892013033761112/19/13Thermally enhanced semiconductor package with conductive clip
902013033762612/19/13Monolithic group iii-v and group iv device
912013031652711/28/13Multi-chip-scale package
922013029987711/14/13Integrated iii-nitride and silicon device
932013027736210/24/13Power converter with over-voltage protection
942013027771110/24/13Oscillation free fast-recovery diode
952013027818110/24/13Reverse rotation of a motor configured for operation in a forward direction
962013027120110/17/13System on chip for power inverter
972013026457910/10/13Iii-nitride heterojunction device
982013026463610/10/13Trench fet with ruggedness enhancement regions
992013026496810/10/13Power converter having an advanced control ic
1002013025674410/03/13Igbt with buried emitter electrode
1012013025674510/03/13Deep gate trench igbt
1022013025680710/03/13Integrated dual power converter package having internal driver ic
1032013025685910/03/13Dual power converter package using external driver ic
1042013025689410/03/13Porous metallic film as die attach and interconnect
1052013025690510/03/13Monolithic power converter package with through substrate vias
1062013024888409/26/13Iii-nitride power device
1072013024907209/26/13Direct contact package for power transistors
1082013024950809/26/13Voltage regulator having an emulated ripple generator
1092013024089809/19/13Group iii-v and group iv composite switch
1102013024091109/19/13Iii-nitride multi-channel heterojunction device
1112013023420809/12/13Composite semiconductor device with active oscillation prevention
1122013022879409/05/13Stacked half-bridge package with a common leadframe
1132013022912609/05/13Electronic ballast with power factor correction
1142013021428308/22/13Power transistor having segmented gate
1152013021433008/22/13Transistor having increased breakdown voltage
1162013021428308/22/13Power transistor having segmented gate
1172013021433008/22/13Transistor having increased breakdown voltage
1182013020712008/15/13Power device with solderable front metal
1192013020712008/15/13Power device with solderable front metal
1202013019649008/01/13Method and apparatus for growing a iii-nitride layer
1212013019649008/01/13Method and apparatus for growing a iii-nitride layer
1222013018247007/18/13Power module package having a multi-phase inverter and power factor correction
1232013018247007/18/13Power module package having a multi-phase inverter and power factor correction
1242013017554207/11/13Group iii-v and group iv composite diode
1252013017569007/11/13Power semiconductor device with reduced contact resistance
1262013017554207/11/13Group iii-v and group iv composite diode
1272013017569007/11/13Power semiconductor device with reduced contact resistance
1282013016180306/27/13Semiconductor package with conductive heat spreader
1292013016180306/27/13Semiconductor package with conductive heat spreader
1302013014701606/13/13Semiconductor package having internal shunt and solder stop dimples
1312013014701606/13/13Semiconductor package having internal shunt and solder stop dimples
1322013014060206/06/13Power semiconductor package with conductive clip
1332013014068406/06/13Semiconductor device assembly utilizing a dbc substrate
1342013014070106/06/13Solderable contact and passivation for semiconductor dies
1352013014339906/06/13Method for forming a reliable solderable contact
1362013014060206/06/13Power semiconductor package with conductive clip
1372013014068406/06/13Semiconductor device assembly utilizing a dbc substrate
1382013014070106/06/13Solderable contact and passivation for semiconductor dies
1392013014339906/06/13Method for forming a reliable solderable contact
1402013013443705/30/13Method for forming gallium nitride devices with conductive regions
1412013013452405/30/13Multi-transistor exposed conductive clip for semiconductor packages
1422013013443705/30/13Method for forming gallium nitride devices with conductive regions
1432013013452405/30/13Multi-transistor exposed conductive clip for semiconductor packages
1442013012689505/23/13Gallium nitride devices with vias
1452013012689505/23/13Gallium nitride devices with vias
1462013011299005/09/13Gallium nitride devices with compositionally-graded transition layer
1472013011574605/09/13Method for fabricating a vertical ldmos device
1482013011299005/09/13Gallium nitride devices with compositionally-graded transition layer
1492013011574605/09/13Method for fabricating a vertical ldmos device
1502013010581405/02/13Active area shaping for iii-nitride devices
1512013010595805/02/13Compact wirebonded power quad flat no-lead (pqfn) package
1522013010581405/02/13Active area shaping for iii-nitride devices
1532013010595805/02/13Compact wirebonded power quad flat no-lead (pqfn) package
1542013009957904/25/13System and method for providing active power balancing
1552013009335604/18/13Flyback driver for use in a flyback power converter and related method
1562013007631103/28/13System for actively managing energy banks during energy transfer and related method
1572013006920803/21/13Group iii-v device structure having a selectively reduced impurity concentration
1582013004907902/28/13Small-outline package for a power transistor
1592013004981602/28/13Power saving resonant gate driver and related method
1602013002682201/31/13Energy storage system and related method
1612013001549501/17/13Stacked half-bridge power module
1622013001549901/17/13Composite semiconductor device with a soi substrate having an integrated diode
1632013001550101/17/13Nested composite diode
1642013001590501/17/13Nested composite switch
1652013000164801/03/13Gated algan/gan schottky device
1662012031310612/13/12Enhancement mode group iii-v high electron mobility transistor (hemt) and method for fabrication
1672012031437212/13/12Power semiconductor package with double-sided cooling
1682012030607212/06/12Semiconductor wafer with reduced thickness variation and method for fabricating same
1692012029275211/22/12Thermally enhanced semiconductor package with exposed parallel conductive clip
1702012029275311/22/12Multi-transistor exposed conductive clip for high power semiconductor packages
1712012029275411/22/12Common drain exposed conductive clip for high power semiconductor packages
1722012029314711/22/12Monolithic group iii-v power converter
1732012028024511/08/12High voltage cascoded iii-nitride rectifier package with stamped leadframe
1742012028024611/08/12High voltage cascoded iii-nitride rectifier package with etched leadframe
1752012028024711/08/12High voltage cascoded iii-nitride rectifier package utilizing clips on package support surface
1762012027436611/01/12Integrated power stage
1772012027512111/01/12Power module with press-fit clamps
1782012026210010/18/12Bondwireless power module with three-dimensional current routing
1792012025618810/11/12Stacked composite device including a group iii-v transistor and a group iv lateral transistor
1802012025618910/11/12Stacked composite device including a group iii-v transistor and a group iv vertical transistor
1812012025619010/11/12Stacked composite device including a group iii-v transistor and a group iv diode
1822012024856410/04/12Dual compartment semiconductor package with temperature sensor
1832012024175609/27/12High voltage composite semiconductor device with protection for a low voltage device
1842012024181909/27/12Composite semiconductor device with turn-on prevention control
1852012024182009/27/12Iii-nitride transistor with passive oscillation prevention
1862012023520909/20/12High voltage rectifier and switching circuits
1872012022917609/13/12Integrated semiconductor device
1882012022332109/06/12Iii-nitride transistor stacked with fet in a package
1892012022332209/06/12Iii-nitride transistor stacked with diode in a package
1902012022332709/06/12Programmable gate iii-nitride semiconductor device
1912012022336509/06/12Iii-nitride semiconductor structures with strain absorbing interlayer transition modules
1922012022341509/06/12Igbt power semiconductor package having a conductive clip
1932012021182508/23/12Trench mosfet and method for fabricating same
1942012020027508/09/12Integrated high-voltage power supply start-up circuit
1952012020054708/09/12Gate driver with multiple slopes for plasma display panels
1962012019417008/02/12Load detection for switched-mode power converters
1972012018792807/26/12Synchronous buck converter including multi-mode control for light load efficiency and related method
1982012018162407/19/12Stacked half-bridge package with a common conductive clip
1992012018167407/19/12Stacked half-bridge package with a common conductive leadframe
2002012018168107/19/12Stacked half-bridge package with a current carrying layer
2012012017568807/12/12Semiconductor package with reduced on-resistance and top metal spreading resistance with application to power transistor packaging
2022012016892207/05/12High power semiconductor package with conductive clip
2032012016892307/05/12High power semiconductor package with conductive clip on multiple transistors
2042012016892407/05/12High power semiconductor package with multiple conductive clips
2052012016892507/05/12High power semiconductor package with conductive clips and flip chip driver ic
2062012016892607/05/12High power semiconductor package with conductive clip and flip chip driver ic with integrated control transistor
2072012015335106/21/12Stress modulated group iii-v semiconductor device and related method
2082012014620506/14/12Multi-chip module (mcm) power quad flat no-lead (pqfn) semiconductor package utilizing a leadframe for electrical interconnections
2092012011922305/17/12Gallium nitride semiconductor structures with compositionally-graded transition layer
2102012010458705/03/12Direct contact semiconductor package with power transistor
2112012010458605/03/12Direct contact flip chip package with power transistors
2122012009147004/19/12Programmable gate iii-nitride power transistor
2132012006819003/22/12Gallium nitride devices with electrically conductive regions
2142012007096703/22/12Method for forming gallium nitride devices with conductive regions
2152012006172503/15/12Power semiconductor package
2162012006219903/15/12Iii-nitride power converter circuit
2172012006228103/15/12Power converter with split power supply
2182012004980103/01/12Dynamic power management system and method
2192012004983303/01/12Smart photovoltaic panel and method for regulating power using same
2202012004355302/23/12Hybrid semiconductor device having a gan transistor and a silicon mosfet
2212012002571302/02/12System using shunt circuits to selectively bypass open loads
2222011031608612/29/11Wafer scale package for high power devices
2232011028486211/24/11Iii-nitride switching device with an emulated diode
2242011028486811/24/11High voltage iii-nitride transistor
2252011028486911/24/11High voltage durability iii-nitride hemt
2262011028495011/24/11Method for fabricating a shallow and narrow trench fetand related structures
2272011027871011/17/11Direct contact leadless package
2282011027871111/17/11Leadless package for high current devices
2292011027270511/10/11Interdigitated conductive support for gan semiconductor die
2302011027275911/10/11Vertical ldmos device and method for fabricating same
2312011027518311/10/11Enhancement mode iii-nitride fet
2322011026032210/27/11"semiconductor on semiconductor substrate multi-chip-scale package"
2332011026066810/27/11Low frequency drive control circuit and method for driving an inductive load
2342011024101910/06/11Iii-nitride power semiconductor device
2352011024467110/06/11Method for fabricating a iii-nitride semiconductor device
2362011022709009/22/11Programmable iii-nitride transistor with aluminum-doped gate
2372011022709209/22/11Iii-nitride semiconductor device
2382011022374609/15/11Method for fabrication of iii-nitride heterojunction semiconductor device
2392011021656309/08/11Hemt/gan half-bridge circuit
2402011021033709/01/11Monolithic integration of silicon and group iii-v devices
2412011021033809/01/11Efficient high voltage switching circuits and monolithic integration of same
2422011019861108/18/11Iii-nitride power device with solderable front metal
2432011018125207/28/11Driving circuit for depletion mode semiconductor switches
2442011017555907/21/11Motor drive based on iii-nitride devices
2452011016337307/07/11Semiconductor device including a voltage controlled termination structure and method for fabricating same
2462011015794906/30/11Highly efficient iii-nitride power conversion circuit
2472011014016906/16/11Highly conductive source/drain contacts in iii-nitride transistors
2482011014017606/16/11Monolithic integrated composite group iii-v and group iv semiconductor device and method for fabricating same
2492011014351706/16/11Iii-nitride monolithic ic


ARCHIVE: New 2014 2013 2012 2011 2010 2009



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This listing is an abstract for educational and research purposes is only meant as a recent sample of applications filed, not a comprehensive history. Freshpatents.com is not affiliated or associated with International Rectifier Corporation in any way and there may be associated servicemarks. This data is also published to the public by the USPTO and available for free on their website. Note that there may be alternative spellings for International Rectifier Corporation with additional patents listed. Browse our Agent directory for other possible listings. Page by FreshPatents.com

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