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International Rectifier Corporation
International Rectifier Corporation el Segundo Ca
International Rectifier Corporation_20100107

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International Rectifier Corporation patents


      
Recent patent applications related to International Rectifier Corporation. International Rectifier Corporation is listed as an Agent/Assignee. Note: International Rectifier Corporation may have other listings under different names/spellings. We're not affiliated with International Rectifier Corporation, we're just tracking patents.

ARCHIVE: New 2015 2014 2013 2012 2011 2010 2009 | Company Directory "I" | International Rectifier Corporation-related inventors


Search recent Press Releases: International Rectifier Corporation-related press releases
Count Application # Date International Rectifier Corporation patents (updated weekly) - BOOKMARK this page
12015009719604/09/15Integrated device including silicon and iii-nitride semiconductor devices
22015007707403/19/15Circuit and producing an average output inductor current indicator
32015005456402/26/15Level shifter utilizing a capacitive isolation barrier
42015003512002/05/15Wafer scale package for high power devices
52015003796502/05/15Fabrication of iii-nitride semiconductor device and related structures
62015002161901/22/15Iii-nitride semiconductor device with reduced electric field between gate and drain
72015001469801/15/15Integrated iii-nitride d-mode hfet with cascoded pair half bridge
82015001470101/15/15Iii-nitride semiconductor device with reduced electric field
92015001470301/15/15Iii-nitride device with solderable front metal
102015001474001/15/15Monolithic composite iii-nitride transistor with high voltage group iv enable switch
112015000844501/08/15Iii-nitride device and fet in a package
122015000857201/08/15Power semiconductor package with multiple dies
132015000159901/01/15Power semiconductor package with non-contiguous, multi-section conductive carrier
142015000172201/01/15Semiconductor device with reduced contact resistance
152014037482512/25/14Power semiconductor device with contiguous gate trenches and offset source trenches
162014037524212/25/14Depletion mode group iii-v transistor with high voltage group iv enable switch
172014036774412/18/14Monolithic integrated composite group iii-v and group iv semiconductor device and ic
182014035368012/04/14Gallium nitride semiconductor structures with compositionally-graded transition layer
192014035372312/04/14High voltage durability iii-nitride device
202014033965111/20/14Semiconductor device with a field plate double trench having a thick bottom dielectric
212014033966911/20/14Semiconductor device with a field plate trench having a thick bottom dielectric
222014033967011/20/14Semiconductor device with a thick bottom field plate trench having a single dielectric and angled sidewalls
232014033968611/20/14Group iii-v device with a selectively modified impurity concentration
242014033287911/13/14Power semiconductor device with reduced on-resistance and increased breakdown voltage
252014031966510/30/14Power semiconductor package
262014026437309/18/14Iii-nitride heterojunction device
272014025237509/11/14Delamination and crack prevention in iii-nitride wafers
282014025321709/11/14Rf switch gate control
292014023934908/28/14Drain pad having a reduced termination electric field
302014022440908/14/14Sintering utilizing non-mechanical pressure
312014022516208/14/14Integrated half-bridge circuit with low side and high side composite switches
322014022516308/14/14Inverter circuit including short circuit protected composite switch
332014021009207/31/14Refractory metal nitride capped contact
342014021051907/31/14Combined sense signal generation and detection
352014021076807/31/14Single layer touch sensor
362014021304607/31/14Fabrication of iii-nitride layers
372014020329407/24/14Gallium nitride devices
382014020329507/24/14Integrated power device with iii-nitride half bridges
392014020341907/24/14Half-bridge package with a conductive clip
402014019746107/17/14Semiconductor structure including a spatially confined dielectric region
412014019746207/17/14Iii-nitride transistor with high resistivity substrate
422014019133707/10/14Stacked half-bridge package
432014019244107/10/14Dc/dc converter with iii-nitride switches
442014017563006/26/14Semiconductor package with multiple conductive clips
452014016711206/19/14Cascode circuit integration of group iii-n and group iv devices
462014016715206/19/14Reduced gate charge trench field-effect transistor
472014016715306/19/14Trench fet having merged gate dielectric
482014016905206/19/14Iii-nitride power conversion circuit
492014015911606/12/14Iii-nitride device having an enhanced field plate
502014014799805/29/14Ion implantation at high temperature surface equilibrium conditions
512014013165905/15/14Gallium nitride devices with aluminum nitride intermediate layer
522014013170905/15/14Semiconductor package with temperature sensor
532014013176705/15/14Dual compartment semiconductor package
542014012489005/08/14Semiconductor package having multi-phase power inverter with internal temperature sensor
552014012625605/08/14Semiconductor package having an over-temperature protection circuit utilizing multiple temperature threshold values
562014012786105/08/14Semiconductor packages utilizing leadframe panels with grooves in connecting bars
572014011751705/01/14Power quad flat no-lead (pqfn) package having control and driver circuits
582014011751805/01/14Control and driver circuits on a power quad flat no-lead (pqfn) leadframe
592014011803205/01/14Buck converter power package
602014011077604/24/14Semiconductor package including conductive carrier coupled power switches
612014011078804/24/14Power converter package including top-drain configured power fet
622014011079604/24/14Semiconductor package with conductive carrier integrated heat spreader
632014011086304/24/14Power converter package including vertically stacked driver ic
642014010339304/17/14Surface mountable power components
652014010351404/17/14Power quad flat no-lead (pqfn) package having bootstrap diodes on a common integrated circuit (ic)
662014010654804/17/14Fabrication of iii-nitride semiconductor device and related structures
672014009744604/10/14Gallium nitride devices with gallium nitride alloy intermediate layer
682014009747104/10/14Active area shaping of iii-nitride devices utilizing a field plate defined by a dielectric body
692014009749804/10/14Open source power quad flat no-lead (pqfn) leadframe
702014009753104/10/14Power quad flat no-lead (pqfn) package in a single shunt inverter circuit
712014009144904/03/14Power quad flat no-lead (pqfn) semiconductor package with leadframe islands for multi-phase power inverter
722014008443103/27/14Semiconductor package with heat spreader
732014007722203/20/14Gallium nitride devices with aluminum nitride alloy intermediate layer
742014007027803/13/14Active area shaping of iii-nitride devices utilizing multiple dielectric materials
752014007027903/13/14Active area shaping of iii-nitride devices utilizing a source-side field plate and a wider drain-side field plate
762014007028003/13/14Active area shaping of iii-nitride devices utilizing steps of source-side and drain-side field plates
772014007062703/13/14Integrated group iii-v power stage
782014007078603/13/14Power converter including integrated driver providing overcurrent protection
792014006188503/06/14Power quad flat no-lead (pqfn) package
802014005460702/27/14Group iii-v device with strain-relieving layers
812014005510902/27/14Power converter including integrated driver for depletion mode group iii-v transistor
822014004892302/20/14Semiconductor package for high power devices
832014003495902/06/14Iii-nitride semiconductor device with stepped gate
842014003500502/06/14Monolithic integrated group iii-v and group iv device
852014003839102/06/14Iii-nitride wafer fabrication
862014002836901/30/14Level shifter utilizing bidirectional signaling through a capacitive isolation barrier
872014003085401/30/14High voltage cascoded iii-nitride rectifier package
882014003085801/30/14Enhancement mode iii-nitride device
892014000866301/09/14Integrated composite group iii-v and group iv semiconductor device
902014000161401/02/14Thermally enhanced semiconductor package
912013033457412/19/13Monolithic integrated composite group iii-v and group iv device
922013033761112/19/13Thermally enhanced semiconductor package with conductive clip
932013033762612/19/13Monolithic group iii-v and group iv device
942013031652711/28/13Multi-chip-scale package
952013029987711/14/13Integrated iii-nitride and silicon device
962013027736210/24/13Power converter with over-voltage protection
972013027771110/24/13Oscillation free fast-recovery diode
982013027818110/24/13Reverse rotation of a motor configured for operation in a forward direction
992013027120110/17/13System on chip for power inverter
1002013026457910/10/13Iii-nitride heterojunction device
1012013026463610/10/13Trench fet with ruggedness enhancement regions
1022013026496810/10/13Power converter having an advanced control ic
1032013025674410/03/13Igbt with buried emitter electrode
1042013025674510/03/13Deep gate trench igbt
1052013025680710/03/13Integrated dual power converter package having internal driver ic
1062013025685910/03/13Dual power converter package using external driver ic
1072013025689410/03/13Porous metallic film as die attach and interconnect
1082013025690510/03/13Monolithic power converter package with through substrate vias
1092013024888409/26/13Iii-nitride power device
1102013024907209/26/13Direct contact package for power transistors
1112013024950809/26/13Voltage regulator having an emulated ripple generator
1122013024089809/19/13Group iii-v and group iv composite switch
1132013024091109/19/13Iii-nitride multi-channel heterojunction device
1142013023420809/12/13Composite semiconductor device with active oscillation prevention
1152013022879409/05/13Stacked half-bridge package with a common leadframe
1162013022912609/05/13Electronic ballast with power factor correction
1172013021428308/22/13Power transistor having segmented gate
1182013021433008/22/13Transistor having increased breakdown voltage
1192013020712008/15/13Power device with solderable front metal
1202013019649008/01/13Method and growing a iii-nitride layer
1212013018247007/18/13Power module package having a multi-phase inverter and power factor correction
1222013017554207/11/13Group iii-v and group iv composite diode
1232013017569007/11/13Power semiconductor device with reduced contact resistance
1242013016180306/27/13Semiconductor package with conductive heat spreader
1252013014701606/13/13Semiconductor package having internal shunt and solder stop dimples
1262013014060206/06/13Power semiconductor package with conductive clip
1272013014068406/06/13Semiconductor device assembly utilizing a dbc substrate
1282013014070106/06/13Solderable contact and passivation for semiconductor dies
1292013014339906/06/13Method for forming a reliable solderable contact
1302013013443705/30/13Method for forming gallium nitride devices with conductive regions
1312013013452405/30/13Multi-transistor exposed conductive clip for semiconductor packages
1322013012689505/23/13Gallium nitride devices with vias
1332013011299005/09/13Gallium nitride devices with compositionally-graded transition layer
1342013011574605/09/13Method for fabricating a vertical ldmos device
1352013010581405/02/13Active area shaping for iii-nitride devices
1362013010595805/02/13Compact wirebonded power quad flat no-lead (pqfn) package
1372013009957904/25/13System and providing active power balancing
1382013009335604/18/13Flyback driver for use in a flyback power converter and related method
1392013007631103/28/13System for actively managing energy banks during energy transfer and related method
1402013006920803/21/13Group iii-v device structure having a selectively reduced impurity concentration
1412013004907902/28/13Small-outline package for a power transistor
1422013004981602/28/13Power saving resonant gate driver and related method
1432013002682201/31/13Energy storage system and related method
1442013001549501/17/13Stacked half-bridge power module
1452013001549901/17/13Composite semiconductor device with a soi substrate having an integrated diode
1462013001550101/17/13Nested composite diode
1472013001590501/17/13Nested composite switch
1482013000164801/03/13Gated algan/gan schottky device
1492012031310612/13/12Enhancement mode group iii-v high electron mobility transistor (hemt) and fabrication
1502012031437212/13/12Power semiconductor package with double-sided cooling
1512012030607212/06/12Semiconductor wafer with reduced thickness variation and fabricating same
1522012029275211/22/12Thermally enhanced semiconductor package with exposed parallel conductive clip
1532012029275311/22/12Multi-transistor exposed conductive clip for high power semiconductor packages
1542012029275411/22/12Common drain exposed conductive clip for high power semiconductor packages
1552012029314711/22/12Monolithic group iii-v power converter
1562012028024511/08/12High voltage cascoded iii-nitride rectifier package with stamped leadframe
1572012028024611/08/12High voltage cascoded iii-nitride rectifier package with etched leadframe
1582012028024711/08/12High voltage cascoded iii-nitride rectifier package utilizing clips on package support surface
1592012027436611/01/12Integrated power stage
1602012027512111/01/12Power module with press-fit clamps
1612012026210010/18/12Bondwireless power module with three-dimensional current routing
1622012025618810/11/12Stacked composite device including a group iii-v transistor and a group iv lateral transistor
1632012025618910/11/12Stacked composite device including a group iii-v transistor and a group iv vertical transistor
1642012025619010/11/12Stacked composite device including a group iii-v transistor and a group iv diode
1652012024856410/04/12Dual compartment semiconductor package with temperature sensor
1662012024175609/27/12High voltage composite semiconductor device with protection for a low voltage device
1672012024181909/27/12Composite semiconductor device with turn-on prevention control
1682012024182009/27/12Iii-nitride transistor with passive oscillation prevention
1692012023520909/20/12High voltage rectifier and switching circuits
1702012022917609/13/12Integrated semiconductor device
1712012022332109/06/12Iii-nitride transistor stacked with fet in a package
1722012022332209/06/12Iii-nitride transistor stacked with diode in a package
1732012022332709/06/12Programmable gate iii-nitride semiconductor device
1742012022336509/06/12Iii-nitride semiconductor structures with strain absorbing interlayer transition modules
1752012022341509/06/12Igbt power semiconductor package having a conductive clip
1762012021182508/23/12Trench mosfet and fabricating same
1772012020027508/09/12Integrated high-voltage power supply start-up circuit
1782012020054708/09/12Gate driver with multiple slopes for plasma display panels
1792012019417008/02/12Load detection for switched-mode power converters
1802012018792807/26/12Synchronous buck converter including multi-mode control for light load efficiency and related method
1812012018162407/19/12Stacked half-bridge package with a common conductive clip
1822012018167407/19/12Stacked half-bridge package with a common conductive leadframe
1832012018168107/19/12Stacked half-bridge package with a current carrying layer
1842012017568807/12/12Semiconductor package with reduced on-resistance and top metal spreading resistance with application to power transistor packaging
1852012016892207/05/12High power semiconductor package with conductive clip
1862012016892307/05/12High power semiconductor package with conductive clip on multiple transistors
1872012016892407/05/12High power semiconductor package with multiple conductive clips
1882012016892507/05/12High power semiconductor package with conductive clips and flip chip driver ic
1892012016892607/05/12High power semiconductor package with conductive clip and flip chip driver ic with integrated control transistor
1902012015335106/21/12Stress modulated group iii-v semiconductor device and related method
1912012014620506/14/12Multi-chip module (mcm) power quad flat no-lead (pqfn) semiconductor package utilizing a leadframe for electrical interconnections
1922012011922305/17/12Gallium nitride semiconductor structures with compositionally-graded transition layer
1932012010458705/03/12Direct contact semiconductor package with power transistor
1942012010458605/03/12Direct contact flip chip package with power transistors
1952012009147004/19/12Programmable gate iii-nitride power transistor
1962012006819003/22/12Gallium nitride devices with electrically conductive regions
1972012007096703/22/12Method for forming gallium nitride devices with conductive regions
1982012006172503/15/12Power semiconductor package
1992012006219903/15/12Iii-nitride power converter circuit
2002012006228103/15/12Power converter with split power supply
2012012004980103/01/12Dynamic power management system and method
2022012004983303/01/12Smart photovoltaic panel and regulating power using same
2032012004355302/23/12Hybrid semiconductor device having a gan transistor and a silicon mosfet
2042012002571302/02/12System using shunt circuits to selectively bypass open loads
2052011031608612/29/11Wafer scale package for high power devices
2062011028486211/24/11Iii-nitride switching device with an emulated diode
2072011028486811/24/11High voltage iii-nitride transistor
2082011028486911/24/11High voltage durability iii-nitride hemt
2092011028495011/24/11Method for fabricating a shallow and narrow trench fetand related structures
2102011027871011/17/11Direct contact leadless package
2112011027871111/17/11Leadless package for high current devices
2122011027270511/10/11Interdigitated conductive support for gan semiconductor die
2132011027275911/10/11Vertical ldmos device and fabricating same
2142011027518311/10/11Enhancement mode iii-nitride fet
2152011026032210/27/11"semiconductor on semiconductor substrate multi-chip-scale package"
2162011026066810/27/11Low frequency drive control circuit and driving an inductive load
2172011024101910/06/11Iii-nitride power semiconductor device
2182011024467110/06/11Method for fabricating a iii-nitride semiconductor device
2192011022709009/22/11Programmable iii-nitride transistor with aluminum-doped gate
2202011022709209/22/11Iii-nitride semiconductor device
2212011022374609/15/11Method for fabrication of iii-nitride heterojunction semiconductor device
2222011021656309/08/11Hemt/gan half-bridge circuit
2232011021033709/01/11Monolithic integration of silicon and group iii-v devices
2242011021033809/01/11Efficient high voltage switching circuits and monolithic integration of same
2252011019861108/18/11Iii-nitride power device with solderable front metal
2262011018125207/28/11Driving circuit for depletion mode semiconductor switches
2272011017555907/21/11Motor drive based on iii-nitride devices
2282011016337307/07/11Semiconductor device including a voltage controlled termination structure and fabricating same
2292011015794906/30/11Highly efficient iii-nitride power conversion circuit
2302011014016906/16/11Highly conductive source/drain contacts in iii-nitride transistors
2312011014017606/16/11Monolithic integrated composite group iii-v and group iv semiconductor device and fabricating same
2322011014351706/16/11Iii-nitride monolithic ic
2332011013325106/09/11Gated algan/gan heterojunction schottky device
2342011013457606/09/11Power delivery circuit having protection switch for reverse battery condition
2352011013632506/09/11Method for fabricating a monolithic integrated composite group iii-v and group iv semiconductor device
2362011012131305/26/11Enhancement mode iii-nitride transistors with single gate dielectric structure
2372011010896805/12/11Semiconductor package with metal straps
2382011010188005/05/11Driver circuit with an increased power factor
2392011009573604/28/11Monolithic iii-nitride power converter
2402011008431104/14/11Group iii-v semiconductor device with strain-relieving interlayers
2412011008015604/07/11Dc/dc converter with depletion-mode iii-nitride switches
2422011007437503/31/11Gate driver in buck converters
2432011005730003/10/11Direct contact leadless flip chip package for high current devices
2442011004956903/03/11Semiconductor structure including a field modulation body and fabricating same
2452011004969003/03/11Direct contract leadless package for high current devices
2462011004972003/03/11Refractory metal nitride capped electrical contact and frabricating same
2472010031469512/16/10Self-aligned vertical group iii-v transistor and fabricated same
2482010030837512/09/10Rare earth enhanced high electron mobility transistor and fabricating same
2492010030139612/02/10Asymmetrically recessed high-power and high-gain ultra-short gate hemt device



ARCHIVE: New 2015 2014 2013 2012 2011 2010 2009



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