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International Rectifier Corporation
International Rectifier Corporation el Segundo Ca
International Rectifier Corporation_20100107

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International Rectifier Corporation patents


      
Recent patent applications related to International Rectifier Corporation. International Rectifier Corporation is listed as an Agent/Assignee. Note: International Rectifier Corporation may have other listings under different names/spellings. We're not affiliated with International Rectifier Corporation, we're just tracking patents.

ARCHIVE: New 2014 2013 2012 2011 2010 2009 | Company Directory "I" | International Rectifier Corporation-related inventors



Semiconductor device with a field plate trench having a thick bottom dielectric

International Rectifier

Semiconductor device with a field plate trench having a thick bottom dielectric

Semiconductor device with a thick bottom field plate trench having a single dielectric and angled sidewalls

International Rectifier

Semiconductor device with a thick bottom field plate trench having a single dielectric and angled sidewalls

Semiconductor device with a thick bottom field plate trench having a single dielectric and angled sidewalls

International Rectifier

Group iii-v device with a selectively modified impurity concentration

Search recent Press Releases: International Rectifier Corporation-related press releases
Count Application # Date International Rectifier Corporation patents (updated weekly) - BOOKMARK this page
12014033965111/20/14Semiconductor device with a field plate double trench having a thick bottom dielectric
22014033966911/20/14Semiconductor device with a field plate trench having a thick bottom dielectric
32014033967011/20/14Semiconductor device with a thick bottom field plate trench having a single dielectric and angled sidewalls
42014033968611/20/14Group iii-v device with a selectively modified impurity concentration
52014033287911/13/14Power semiconductor device with reduced on-resistance and increased breakdown voltage
62014031966510/30/14Power semiconductor package
72014026437309/18/14Iii-nitride heterojunction device
82014025237509/11/14Delamination and crack prevention in iii-nitride wafers
92014025321709/11/14Rf switch gate control
102014023934908/28/14Drain pad having a reduced termination electric field
112014022440908/14/14Sintering utilizing non-mechanical pressure
122014022516208/14/14Integrated half-bridge circuit with low side and high side composite switches
132014022516308/14/14Inverter circuit including short circuit protected composite switch
142014021009207/31/14Refractory metal nitride capped contact
152014021051907/31/14Combined sense signal generation and detection
162014021076807/31/14Single layer touch sensor
172014021304607/31/14Fabrication of iii-nitride layers
182014020329407/24/14Gallium nitride devices
192014020329507/24/14Integrated power device with iii-nitride half bridges
202014020341907/24/14Half-bridge package with a conductive clip
212014019746107/17/14Semiconductor structure including a spatially confined dielectric region
222014019746207/17/14Iii-nitride transistor with high resistivity substrate
232014019133707/10/14Stacked half-bridge package
242014019244107/10/14Dc/dc converter with iii-nitride switches
252014017563006/26/14Semiconductor package with multiple conductive clips
262014016711206/19/14Cascode circuit integration of group iii-n and group iv devices
272014016715206/19/14Reduced gate charge trench field-effect transistor
282014016715306/19/14Trench fet having merged gate dielectric
292014016905206/19/14Iii-nitride power conversion circuit
302014015911606/12/14Iii-nitride device having an enhanced field plate
312014014799805/29/14Ion implantation at high temperature surface equilibrium conditions
322014013165905/15/14Gallium nitride devices with aluminum nitride intermediate layer
332014013170905/15/14Semiconductor package with temperature sensor
342014013176705/15/14Dual compartment semiconductor package
352014012489005/08/14Semiconductor package having multi-phase power inverter with internal temperature sensor
362014012625605/08/14Semiconductor package having an over-temperature protection circuit utilizing multiple temperature threshold values
372014012786105/08/14Semiconductor packages utilizing leadframe panels with grooves in connecting bars
382014011751705/01/14Power quad flat no-lead (pqfn) package having control and driver circuits
392014011751805/01/14Control and driver circuits on a power quad flat no-lead (pqfn) leadframe
402014011803205/01/14Buck converter power package
412014011077604/24/14Semiconductor package including conductive carrier coupled power switches
422014011078804/24/14Power converter package including top-drain configured power fet
432014011079604/24/14Semiconductor package with conductive carrier integrated heat spreader
442014011086304/24/14Power converter package including vertically stacked driver ic
452014010339304/17/14Surface mountable power components
462014010351404/17/14Power quad flat no-lead (pqfn) package having bootstrap diodes on a common integrated circuit (ic)
472014010654804/17/14Fabrication of iii-nitride semiconductor device and related structures
482014009744604/10/14Gallium nitride devices with gallium nitride alloy intermediate layer
492014009747104/10/14Active area shaping of iii-nitride devices utilizing a field plate defined by a dielectric body
502014009749804/10/14Open source power quad flat no-lead (pqfn) leadframe
512014009753104/10/14Power quad flat no-lead (pqfn) package in a single shunt inverter circuit
522014009144904/03/14Power quad flat no-lead (pqfn) semiconductor package with leadframe islands for multi-phase power inverter
532014008443103/27/14Semiconductor package with heat spreader
542014007722203/20/14Gallium nitride devices with aluminum nitride alloy intermediate layer
552014007027803/13/14Active area shaping of iii-nitride devices utilizing multiple dielectric materials
562014007027903/13/14Active area shaping of iii-nitride devices utilizing a source-side field plate and a wider drain-side field plate
572014007028003/13/14Active area shaping of iii-nitride devices utilizing steps of source-side and drain-side field plates
582014007062703/13/14Integrated group iii-v power stage
592014007078603/13/14Power converter including integrated driver providing overcurrent protection
602014006188503/06/14Power quad flat no-lead (pqfn) package
612014005460702/27/14Group iii-v device with strain-relieving layers
622014005510902/27/14Power converter including integrated driver for depletion mode group iii-v transistor
632014004892302/20/14Semiconductor package for high power devices
642014003495902/06/14Iii-nitride semiconductor device with stepped gate
652014003500502/06/14Monolithic integrated group iii-v and group iv device
662014003839102/06/14Iii-nitride wafer fabrication
672014002836901/30/14Level shifter utilizing bidirectional signaling through a capacitive isolation barrier
682014003085401/30/14High voltage cascoded iii-nitride rectifier package
692014003085801/30/14Enhancement mode iii-nitride device
702014000866301/09/14Integrated composite group iii-v and group iv semiconductor device
712014000161401/02/14Thermally enhanced semiconductor package
722013033457412/19/13Monolithic integrated composite group iii-v and group iv device
732013033761112/19/13Thermally enhanced semiconductor package with conductive clip
742013033762612/19/13Monolithic group iii-v and group iv device
752013031652711/28/13Multi-chip-scale package
762013029987711/14/13Integrated iii-nitride and silicon device
772013027736210/24/13Power converter with over-voltage protection
782013027771110/24/13Oscillation free fast-recovery diode
792013027818110/24/13Reverse rotation of a motor configured for operation in a forward direction
802013027120110/17/13System on chip for power inverter
812013026457910/10/13Iii-nitride heterojunction device
822013026463610/10/13Trench fet with ruggedness enhancement regions
832013026496810/10/13Power converter having an advanced control ic
842013025674410/03/13Igbt with buried emitter electrode
852013025674510/03/13Deep gate trench igbt
862013025680710/03/13Integrated dual power converter package having internal driver ic
872013025685910/03/13Dual power converter package using external driver ic
882013025689410/03/13Porous metallic film as die attach and interconnect
892013025690510/03/13Monolithic power converter package with through substrate vias
902013024888409/26/13Iii-nitride power device
912013024907209/26/13Direct contact package for power transistors
922013024950809/26/13Voltage regulator having an emulated ripple generator
932013024089809/19/13Group iii-v and group iv composite switch
942013024091109/19/13Iii-nitride multi-channel heterojunction device
952013023420809/12/13Composite semiconductor device with active oscillation prevention
962013022879409/05/13Stacked half-bridge package with a common leadframe
972013022912609/05/13Electronic ballast with power factor correction
982013021428308/22/13Power transistor having segmented gate
992013021433008/22/13Transistor having increased breakdown voltage
1002013020712008/15/13Power device with solderable front metal
1012013019649008/01/13Growing a iii-nitride layer
1022013018247007/18/13Power module package having a multi-phase inverter and power factor correction
1032013017554207/11/13Group iii-v and group iv composite diode
1042013017569007/11/13Power semiconductor device with reduced contact resistance
1052013016180306/27/13Semiconductor package with conductive heat spreader
1062013014701606/13/13Semiconductor package having internal shunt and solder stop dimples
1072013014060206/06/13Power semiconductor package with conductive clip
1082013014068406/06/13Semiconductor device assembly utilizing a dbc substrate
1092013014070106/06/13Solderable contact and passivation for semiconductor dies
1102013014339906/06/13Method for forming a reliable solderable contact
1112013013443705/30/13Method for forming gallium nitride devices with conductive regions
1122013013452405/30/13Multi-transistor exposed conductive clip for semiconductor packages
1132013012689505/23/13Gallium nitride devices with vias
1142013011299005/09/13Gallium nitride devices with compositionally-graded transition layer
1152013011574605/09/13Method for fabricating a vertical ldmos device
1162013010581405/02/13Active area shaping for iii-nitride devices
1172013010595805/02/13Compact wirebonded power quad flat no-lead (pqfn) package
1182013009957904/25/13Providing active power balancing
1192013009335604/18/13Flyback driver for use in a flyback power converter and related method
1202013007631103/28/13System for actively managing energy banks during energy transfer and related method
1212013006920803/21/13Group iii-v device structure having a selectively reduced impurity concentration
1222013004907902/28/13Small-outline package for a power transistor
1232013004981602/28/13Power saving resonant gate driver and related method
1242013002682201/31/13Energy storage system and related method
1252013001549501/17/13Stacked half-bridge power module
1262013001549901/17/13Composite semiconductor device with a soi substrate having an integrated diode
1272013001550101/17/13Nested composite diode
1282013001590501/17/13Nested composite switch
1292013000164801/03/13Gated algan/gan schottky device
1302012031310612/13/12Enhancement mode group iii-v high electron mobility transistor (hemt) and method for fabrication
1312012031437212/13/12Power semiconductor package with double-sided cooling
1322012030607212/06/12Semiconductor wafer with reduced thickness variation and method for fabricating same
1332012029275211/22/12Thermally enhanced semiconductor package with exposed parallel conductive clip
1342012029275311/22/12Multi-transistor exposed conductive clip for high power semiconductor packages
1352012029275411/22/12Common drain exposed conductive clip for high power semiconductor packages
1362012029314711/22/12Monolithic group iii-v power converter
1372012028024511/08/12High voltage cascoded iii-nitride rectifier package with stamped leadframe
1382012028024611/08/12High voltage cascoded iii-nitride rectifier package with etched leadframe
1392012028024711/08/12High voltage cascoded iii-nitride rectifier package utilizing clips on package support surface
1402012027436611/01/12Integrated power stage
1412012027512111/01/12Power module with press-fit clamps
1422012026210010/18/12Bondwireless power module with three-dimensional current routing
1432012025618810/11/12Stacked composite device including a group iii-v transistor and a group iv lateral transistor
1442012025618910/11/12Stacked composite device including a group iii-v transistor and a group iv vertical transistor
1452012025619010/11/12Stacked composite device including a group iii-v transistor and a group iv diode
1462012024856410/04/12Dual compartment semiconductor package with temperature sensor
1472012024175609/27/12High voltage composite semiconductor device with protection for a low voltage device
1482012024181909/27/12Composite semiconductor device with turn-on prevention control
1492012024182009/27/12Iii-nitride transistor with passive oscillation prevention
1502012023520909/20/12High voltage rectifier and switching circuits
1512012022917609/13/12Integrated semiconductor device
1522012022332109/06/12Iii-nitride transistor stacked with fet in a package
1532012022332209/06/12Iii-nitride transistor stacked with diode in a package
1542012022332709/06/12Programmable gate iii-nitride semiconductor device
1552012022336509/06/12Iii-nitride semiconductor structures with strain absorbing interlayer transition modules
1562012022341509/06/12Igbt power semiconductor package having a conductive clip
1572012021182508/23/12Trench mosfet and method for fabricating same
1582012020027508/09/12Integrated high-voltage power supply start-up circuit
1592012020054708/09/12Gate driver with multiple slopes for plasma display panels
1602012019417008/02/12Load detection for switched-mode power converters
1612012018792807/26/12Synchronous buck converter including multi-mode control for light load efficiency and related method
1622012018162407/19/12Stacked half-bridge package with a common conductive clip
1632012018167407/19/12Stacked half-bridge package with a common conductive leadframe
1642012018168107/19/12Stacked half-bridge package with a current carrying layer
1652012017568807/12/12Semiconductor package with reduced on-resistance and top metal spreading resistance with application to power transistor packaging
1662012016892207/05/12High power semiconductor package with conductive clip
1672012016892307/05/12High power semiconductor package with conductive clip on multiple transistors
1682012016892407/05/12High power semiconductor package with multiple conductive clips
1692012016892507/05/12High power semiconductor package with conductive clips and flip chip driver ic
1702012016892607/05/12High power semiconductor package with conductive clip and flip chip driver ic with integrated control transistor
1712012015335106/21/12Stress modulated group iii-v semiconductor device and related method
1722012014620506/14/12Multi-chip module (mcm) power quad flat no-lead (pqfn) semiconductor package utilizing a leadframe for electrical interconnections
1732012011922305/17/12Gallium nitride semiconductor structures with compositionally-graded transition layer
1742012010458705/03/12Direct contact semiconductor package with power transistor
1752012010458605/03/12Direct contact flip chip package with power transistors
1762012009147004/19/12Programmable gate iii-nitride power transistor
1772012006819003/22/12Gallium nitride devices with electrically conductive regions
1782012007096703/22/12Method for forming gallium nitride devices with conductive regions
1792012006172503/15/12Power semiconductor package
1802012006219903/15/12Iii-nitride power converter circuit
1812012006228103/15/12Power converter with split power supply
1822012004980103/01/12Dynamic power management system and method
1832012004983303/01/12Smart photovoltaic panel and method for regulating power using same
1842012004355302/23/12Hybrid semiconductor device having a gan transistor and a silicon mosfet
1852012002571302/02/12System using shunt circuits to selectively bypass open loads
1862011031608612/29/11Wafer scale package for high power devices
1872011028486211/24/11Iii-nitride switching device with an emulated diode
1882011028486811/24/11High voltage iii-nitride transistor
1892011028486911/24/11High voltage durability iii-nitride hemt
1902011028495011/24/11Method for fabricating a shallow and narrow trench fetand related structures
1912011027871011/17/11Direct contact leadless package
1922011027871111/17/11Leadless package for high current devices
1932011027270511/10/11Interdigitated conductive support for gan semiconductor die
1942011027275911/10/11Vertical ldmos device and method for fabricating same
1952011027518311/10/11Enhancement mode iii-nitride fet
1962011026032210/27/11"semiconductor on semiconductor substrate multi-chip-scale package"
1972011026066810/27/11Low frequency drive control circuit and method for driving an inductive load
1982011024101910/06/11Iii-nitride power semiconductor device
1992011024467110/06/11Method for fabricating a iii-nitride semiconductor device
2002011022709009/22/11Programmable iii-nitride transistor with aluminum-doped gate
2012011022709209/22/11Iii-nitride semiconductor device
2022011022374609/15/11Method for fabrication of iii-nitride heterojunction semiconductor device
2032011021656309/08/11Hemt/gan half-bridge circuit
2042011021033709/01/11Monolithic integration of silicon and group iii-v devices
2052011021033809/01/11Efficient high voltage switching circuits and monolithic integration of same
2062011019861108/18/11Iii-nitride power device with solderable front metal
2072011018125207/28/11Driving circuit for depletion mode semiconductor switches
2082011017555907/21/11Motor drive based on iii-nitride devices
2092011016337307/07/11Semiconductor device including a voltage controlled termination structure and method for fabricating same
2102011015794906/30/11Highly efficient iii-nitride power conversion circuit
2112011014016906/16/11Highly conductive source/drain contacts in iii-nitride transistors
2122011014017606/16/11Monolithic integrated composite group iii-v and group iv semiconductor device and method for fabricating same
2132011014351706/16/11Iii-nitride monolithic ic
2142011013325106/09/11Gated algan/gan heterojunction schottky device
2152011013457606/09/11Power delivery circuit having protection switch for reverse battery condition
2162011013632506/09/11Method for fabricating a monolithic integrated composite group iii-v and group iv semiconductor device
2172011012131305/26/11Enhancement mode iii-nitride transistors with single gate dielectric structure
2182011010896805/12/11Semiconductor package with metal straps
2192011010188005/05/11Driver circuit with an increased power factor
2202011009573604/28/11Monolithic iii-nitride power converter
2212011008431104/14/11Group iii-v semiconductor device with strain-relieving interlayers
2222011008015604/07/11Dc/dc converter with depletion-mode iii-nitride switches
2232011007437503/31/11Gate driver in buck converters
2242011005730003/10/11Direct contact leadless flip chip package for high current devices
2252011004956903/03/11Semiconductor structure including a field modulation body and method for fabricating same
2262011004969003/03/11Direct contract leadless package for high current devices
2272011004972003/03/11Refractory metal nitride capped electrical contact and method for frabricating same
2282010031469512/16/10Self-aligned vertical group iii-v transistor and method for fabricated same
2292010030837512/09/10Rare earth enhanced high electron mobility transistor and method for fabricating same
2302010030139612/02/10Asymmetrically recessed high-power and high-gain ultra-short gate hemt device
2312010025918610/14/10Buck converter with iii-nitride switch for substantially increased input-to-output voltage ratio
2322010017112607/08/10In situ dopant implantation and growth of a ill-nitride semiconductor body
2332010009666804/22/10High voltage durability iii-nitride semiconductor device
2342010009060804/15/10End-of-lamp life detection circuit
2352010006585603/18/10Semiconductor package with integrated passives and method for fabricating same
2362010003326102/11/10Minimum pulse width for pulse width modulation control
2372010000170601/07/10Converter having pwm ramp adjustable in discontinuous mode operation
2382009027819811/12/09Deep source electrode mosfet
2392009027333011/05/09Merged ramp/oscillator for precise ramp control in one cycle pfc converter
2402009020788308/20/09Precision temperature sensor
2412009017405807/09/09Chip scale package
2422009017434107/09/09Cold-cathode fluorescent lamp (ccfl) current control circuit
2432009010882904/30/09Control integrated circuit with combined output and input
2442009010248804/23/09Ground fault detection circuit for use in high voltage motor drive applications
2452009009628904/16/09Interposer for an integrated dc-dc converter
2462009006652303/12/09Switched mode power converter with over temperature detection
2472009005122502/26/09Gate driving scheme for depletion mode devices in buck converters
2482009004586802/19/09Double stage compact charge pump circuit
2492009003589602/05/09High power mcm package with improved planarity and heat dissipation


ARCHIVE: New 2014 2013 2012 2011 2010 2009



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