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International Rectifier Corporation
International Rectifier Corporation el Segundo Ca
International Rectifier Corporation_20100107

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International Rectifier Corporation patents


      
Recent patent applications related to International Rectifier Corporation. International Rectifier Corporation is listed as an Agent/Assignee. Note: International Rectifier Corporation may have other listings under different names/spellings. We're not affiliated with International Rectifier Corporation, we're just tracking patents.

ARCHIVE: New 2014 2013 2012 2011 2010 2009 | Company Directory "I" | International Rectifier Corporation-related inventors



Search recent Press Releases: International Rectifier Corporation-related press releases
Count Application # Date International Rectifier Corporation patents (updated weekly) - BOOKMARK this page
12014031966510/30/14 new patent  Power semiconductor package
22014026437309/18/14Iii-nitride heterojunction device
32014025237509/11/14Delamination and crack prevention in iii-nitride wafers
42014025321709/11/14Rf switch gate control
52014023934908/28/14Drain pad having a reduced termination electric field
62014022440908/14/14Sintering utilizing non-mechanical pressure
72014022516208/14/14Integrated half-bridge circuit with low side and high side composite switches
82014022516308/14/14Inverter circuit including short circuit protected composite switch
92014021009207/31/14Refractory metal nitride capped contact
102014021051907/31/14Combined sense signal generation and detection
112014021076807/31/14Single layer touch sensor
122014021304607/31/14Fabrication of iii-nitride layers
132014020329407/24/14Gallium nitride devices
142014020329507/24/14Integrated power device with iii-nitride half bridges
152014020341907/24/14Half-bridge package with a conductive clip
162014019746107/17/14Semiconductor structure including a spatially confined dielectric region
172014019746207/17/14Iii-nitride transistor with high resistivity substrate
182014019133707/10/14Stacked half-bridge package
192014019244107/10/14Dc/dc converter with iii-nitride switches
202014017563006/26/14Semiconductor package with multiple conductive clips
212014016711206/19/14Cascode circuit integration of group iii-n and group iv devices
222014016715206/19/14Reduced gate charge trench field-effect transistor
232014016715306/19/14Trench fet having merged gate dielectric
242014016905206/19/14Iii-nitride power conversion circuit
252014015911606/12/14Iii-nitride device having an enhanced field plate
262014014799805/29/14Ion implantation at high temperature surface equilibrium conditions
272014013165905/15/14Gallium nitride devices with aluminum nitride intermediate layer
282014013170905/15/14Semiconductor package with temperature sensor
292014013176705/15/14Dual compartment semiconductor package
302014013165905/15/14Gallium nitride devices with aluminum nitride intermediate layer
312014013170905/15/14Semiconductor package with temperature sensor
322014013176705/15/14Dual compartment semiconductor package
332014012489005/08/14Semiconductor package having multi-phase power inverter with internal temperature sensor
342014012625605/08/14Semiconductor package having an over-temperature protection circuit utilizing multiple temperature threshold values
352014012786105/08/14Semiconductor packages utilizing leadframe panels with grooves in connecting bars
362014012489005/08/14Semiconductor package having multi-phase power inverter with internal temperature sensor
372014012625605/08/14Semiconductor package having an over-temperature protection circuit utilizing multiple temperature threshold values
382014012786105/08/14Semiconductor packages utilizing leadframe panels with grooves in connecting bars
392014011751705/01/14Power quad flat no-lead (pqfn) package having control and driver circuits
402014011751805/01/14Control and driver circuits on a power quad flat no-lead (pqfn) leadframe
412014011803205/01/14Buck converter power package
422014011751705/01/14Power quad flat no-lead (pqfn) package having control and driver circuits
432014011751805/01/14Control and driver circuits on a power quad flat no-lead (pqfn) leadframe
442014011803205/01/14Buck converter power package
452014011077604/24/14Semiconductor package including conductive carrier coupled power switches
462014011078804/24/14Power converter package including top-drain configured power fet
472014011079604/24/14Semiconductor package with conductive carrier integrated heat spreader
482014011086304/24/14Power converter package including vertically stacked driver ic
492014011077604/24/14Semiconductor package including conductive carrier coupled power switches
502014011078804/24/14Power converter package including top-drain configured power fet
512014011079604/24/14Semiconductor package with conductive carrier integrated heat spreader
522014011086304/24/14Power converter package including vertically stacked driver ic
532014010339304/17/14Surface mountable power components
542014010351404/17/14Power quad flat no-lead (pqfn) package having bootstrap diodes on a common integrated circuit (ic)
552014010654804/17/14Fabrication of iii-nitride semiconductor device and related structures
562014010339304/17/14Surface mountable power components
572014010351404/17/14Power quad flat no-lead (pqfn) package having bootstrap diodes on a common integrated circuit (ic)
582014010654804/17/14Fabrication of iii-nitride semiconductor device and related structures
592014009744604/10/14Gallium nitride devices with gallium nitride alloy intermediate layer
602014009747104/10/14Active area shaping of iii-nitride devices utilizing a field plate defined by a dielectric body
612014009749804/10/14Open source power quad flat no-lead (pqfn) leadframe
622014009753104/10/14Power quad flat no-lead (pqfn) package in a single shunt inverter circuit
632014009744604/10/14Gallium nitride devices with gallium nitride alloy intermediate layer
642014009747104/10/14Active area shaping of iii-nitride devices utilizing a field plate defined by a dielectric body
652014009749804/10/14Open source power quad flat no-lead (pqfn) leadframe
662014009753104/10/14Power quad flat no-lead (pqfn) package in a single shunt inverter circuit
672014009744604/10/14Gallium nitride devices with gallium nitride alloy intermediate layer
682014009747104/10/14Active area shaping of iii-nitride devices utilizing a field plate defined by a dielectric body
692014009749804/10/14Open source power quad flat no-lead (pqfn) leadframe
702014009753104/10/14Power quad flat no-lead (pqfn) package in a single shunt inverter circuit
712014009144904/03/14Power quad flat no-lead (pqfn) semiconductor package with leadframe islands for multi-phase power inverter
722014009144904/03/14Power quad flat no-lead (pqfn) semiconductor package with leadframe islands for multi-phase power inverter
732014008443103/27/14Semiconductor package with heat spreader
742014008443103/27/14Semiconductor package with heat spreader
752014007722203/20/14Gallium nitride devices with aluminum nitride alloy intermediate layer
762014007722203/20/14Gallium nitride devices with aluminum nitride alloy intermediate layer
772014007027803/13/14Active area shaping of iii-nitride devices utilizing multiple dielectric materials
782014007027903/13/14Active area shaping of iii-nitride devices utilizing a source-side field plate and a wider drain-side field plate
792014007028003/13/14Active area shaping of iii-nitride devices utilizing steps of source-side and drain-side field plates
802014007062703/13/14Integrated group iii-v power stage
812014007078603/13/14Power converter including integrated driver providing overcurrent protection
822014007027803/13/14Active area shaping of iii-nitride devices utilizing multiple dielectric materials
832014007027903/13/14Active area shaping of iii-nitride devices utilizing a source-side field plate and a wider drain-side field plate
842014007028003/13/14Active area shaping of iii-nitride devices utilizing steps of source-side and drain-side field plates
852014007062703/13/14Integrated group iii-v power stage
862014007078603/13/14Power converter including integrated driver providing overcurrent protection
872014006188503/06/14Power quad flat no-lead (pqfn) package
882014006188503/06/14Power quad flat no-lead (pqfn) package
892014005460702/27/14Group iii-v device with strain-relieving layers
902014005510902/27/14Power converter including integrated driver for depletion mode group iii-v transistor
912014004892302/20/14Semiconductor package for high power devices
922014003495902/06/14Iii-nitride semiconductor device with stepped gate
932014003500502/06/14Monolithic integrated group iii-v and group iv device
942014003839102/06/14Iii-nitride wafer fabrication
952014002836901/30/14Level shifter utilizing bidirectional signaling through a capacitive isolation barrier
962014003085401/30/14High voltage cascoded iii-nitride rectifier package
972014003085801/30/14Enhancement mode iii-nitride device
982014000866301/09/14Integrated composite group iii-v and group iv semiconductor device
992014000161401/02/14Thermally enhanced semiconductor package
1002013033457412/19/13Monolithic integrated composite group iii-v and group iv device
1012013033761112/19/13Thermally enhanced semiconductor package with conductive clip
1022013033762612/19/13Monolithic group iii-v and group iv device
1032013031652711/28/13Multi-chip-scale package
1042013029987711/14/13Integrated iii-nitride and silicon device
1052013027736210/24/13Power converter with over-voltage protection
1062013027771110/24/13Oscillation free fast-recovery diode
1072013027818110/24/13Reverse rotation of a motor configured for operation in a forward direction
1082013027120110/17/13System on chip for power inverter
1092013026457910/10/13Iii-nitride heterojunction device
1102013026463610/10/13Trench fet with ruggedness enhancement regions
1112013026496810/10/13Power converter having an advanced control ic
1122013025674410/03/13Igbt with buried emitter electrode
1132013025674510/03/13Deep gate trench igbt
1142013025680710/03/13Integrated dual power converter package having internal driver ic
1152013025685910/03/13Dual power converter package using external driver ic
1162013025689410/03/13Porous metallic film as die attach and interconnect
1172013025690510/03/13Monolithic power converter package with through substrate vias
1182013024888409/26/13Iii-nitride power device
1192013024907209/26/13Direct contact package for power transistors
1202013024950809/26/13Voltage regulator having an emulated ripple generator
1212013024089809/19/13Group iii-v and group iv composite switch
1222013024091109/19/13Iii-nitride multi-channel heterojunction device
1232013023420809/12/13Composite semiconductor device with active oscillation prevention
1242013022879409/05/13Stacked half-bridge package with a common leadframe
1252013022912609/05/13Electronic ballast with power factor correction
1262013021428308/22/13Power transistor having segmented gate
1272013021433008/22/13Transistor having increased breakdown voltage
1282013021428308/22/13Power transistor having segmented gate
1292013021433008/22/13Transistor having increased breakdown voltage
1302013020712008/15/13Power device with solderable front metal
1312013020712008/15/13Power device with solderable front metal
1322013019649008/01/13Method and apparatus for growing a iii-nitride layer
1332013019649008/01/13Method and apparatus for growing a iii-nitride layer
1342013018247007/18/13Power module package having a multi-phase inverter and power factor correction
1352013018247007/18/13Power module package having a multi-phase inverter and power factor correction
1362013017554207/11/13Group iii-v and group iv composite diode
1372013017569007/11/13Power semiconductor device with reduced contact resistance
1382013017554207/11/13Group iii-v and group iv composite diode
1392013017569007/11/13Power semiconductor device with reduced contact resistance
1402013016180306/27/13Semiconductor package with conductive heat spreader
1412013016180306/27/13Semiconductor package with conductive heat spreader
1422013014701606/13/13Semiconductor package having internal shunt and solder stop dimples
1432013014701606/13/13Semiconductor package having internal shunt and solder stop dimples
1442013014060206/06/13Power semiconductor package with conductive clip
1452013014068406/06/13Semiconductor device assembly utilizing a dbc substrate
1462013014070106/06/13Solderable contact and passivation for semiconductor dies
1472013014339906/06/13Method for forming a reliable solderable contact
1482013014060206/06/13Power semiconductor package with conductive clip
1492013014068406/06/13Semiconductor device assembly utilizing a dbc substrate
1502013014070106/06/13Solderable contact and passivation for semiconductor dies
1512013014339906/06/13Method for forming a reliable solderable contact
1522013013443705/30/13Method for forming gallium nitride devices with conductive regions
1532013013452405/30/13Multi-transistor exposed conductive clip for semiconductor packages
1542013013443705/30/13Method for forming gallium nitride devices with conductive regions
1552013013452405/30/13Multi-transistor exposed conductive clip for semiconductor packages
1562013012689505/23/13Gallium nitride devices with vias
1572013012689505/23/13Gallium nitride devices with vias
1582013011299005/09/13Gallium nitride devices with compositionally-graded transition layer
1592013011574605/09/13Method for fabricating a vertical ldmos device
1602013011299005/09/13Gallium nitride devices with compositionally-graded transition layer
1612013011574605/09/13Method for fabricating a vertical ldmos device
1622013010581405/02/13Active area shaping for iii-nitride devices
1632013010595805/02/13Compact wirebonded power quad flat no-lead (pqfn) package
1642013010581405/02/13Active area shaping for iii-nitride devices
1652013010595805/02/13Compact wirebonded power quad flat no-lead (pqfn) package
1662013009957904/25/13System and method for providing active power balancing
1672013009335604/18/13Flyback driver for use in a flyback power converter and related method
1682013007631103/28/13System for actively managing energy banks during energy transfer and related method
1692013006920803/21/13Group iii-v device structure having a selectively reduced impurity concentration
1702013004907902/28/13Small-outline package for a power transistor
1712013004981602/28/13Power saving resonant gate driver and related method
1722013002682201/31/13Energy storage system and related method
1732013001549501/17/13Stacked half-bridge power module
1742013001549901/17/13Composite semiconductor device with a soi substrate having an integrated diode
1752013001550101/17/13Nested composite diode
1762013001590501/17/13Nested composite switch
1772013000164801/03/13Gated algan/gan schottky device
1782012031310612/13/12Enhancement mode group iii-v high electron mobility transistor (hemt) and method for fabrication
1792012031437212/13/12Power semiconductor package with double-sided cooling
1802012030607212/06/12Semiconductor wafer with reduced thickness variation and method for fabricating same
1812012029275211/22/12Thermally enhanced semiconductor package with exposed parallel conductive clip
1822012029275311/22/12Multi-transistor exposed conductive clip for high power semiconductor packages
1832012029275411/22/12Common drain exposed conductive clip for high power semiconductor packages
1842012029314711/22/12Monolithic group iii-v power converter
1852012028024511/08/12High voltage cascoded iii-nitride rectifier package with stamped leadframe
1862012028024611/08/12High voltage cascoded iii-nitride rectifier package with etched leadframe
1872012028024711/08/12High voltage cascoded iii-nitride rectifier package utilizing clips on package support surface
1882012027436611/01/12Integrated power stage
1892012027512111/01/12Power module with press-fit clamps
1902012026210010/18/12Bondwireless power module with three-dimensional current routing
1912012025618810/11/12Stacked composite device including a group iii-v transistor and a group iv lateral transistor
1922012025618910/11/12Stacked composite device including a group iii-v transistor and a group iv vertical transistor
1932012025619010/11/12Stacked composite device including a group iii-v transistor and a group iv diode
1942012024856410/04/12Dual compartment semiconductor package with temperature sensor
1952012024175609/27/12High voltage composite semiconductor device with protection for a low voltage device
1962012024181909/27/12Composite semiconductor device with turn-on prevention control
1972012024182009/27/12Iii-nitride transistor with passive oscillation prevention
1982012023520909/20/12High voltage rectifier and switching circuits
1992012022917609/13/12Integrated semiconductor device
2002012022332109/06/12Iii-nitride transistor stacked with fet in a package
2012012022332209/06/12Iii-nitride transistor stacked with diode in a package
2022012022332709/06/12Programmable gate iii-nitride semiconductor device
2032012022336509/06/12Iii-nitride semiconductor structures with strain absorbing interlayer transition modules
2042012022341509/06/12Igbt power semiconductor package having a conductive clip
2052012021182508/23/12Trench mosfet and method for fabricating same
2062012020027508/09/12Integrated high-voltage power supply start-up circuit
2072012020054708/09/12Gate driver with multiple slopes for plasma display panels
2082012019417008/02/12Load detection for switched-mode power converters
2092012018792807/26/12Synchronous buck converter including multi-mode control for light load efficiency and related method
2102012018162407/19/12Stacked half-bridge package with a common conductive clip
2112012018167407/19/12Stacked half-bridge package with a common conductive leadframe
2122012018168107/19/12Stacked half-bridge package with a current carrying layer
2132012017568807/12/12Semiconductor package with reduced on-resistance and top metal spreading resistance with application to power transistor packaging
2142012016892207/05/12High power semiconductor package with conductive clip
2152012016892307/05/12High power semiconductor package with conductive clip on multiple transistors
2162012016892407/05/12High power semiconductor package with multiple conductive clips
2172012016892507/05/12High power semiconductor package with conductive clips and flip chip driver ic
2182012016892607/05/12High power semiconductor package with conductive clip and flip chip driver ic with integrated control transistor
2192012015335106/21/12Stress modulated group iii-v semiconductor device and related method
2202012014620506/14/12Multi-chip module (mcm) power quad flat no-lead (pqfn) semiconductor package utilizing a leadframe for electrical interconnections
2212012011922305/17/12Gallium nitride semiconductor structures with compositionally-graded transition layer
2222012010458705/03/12Direct contact semiconductor package with power transistor
2232012010458605/03/12Direct contact flip chip package with power transistors
2242012009147004/19/12Programmable gate iii-nitride power transistor
2252012006819003/22/12Gallium nitride devices with electrically conductive regions
2262012007096703/22/12Method for forming gallium nitride devices with conductive regions
2272012006172503/15/12Power semiconductor package
2282012006219903/15/12Iii-nitride power converter circuit
2292012006228103/15/12Power converter with split power supply
2302012004980103/01/12Dynamic power management system and method
2312012004983303/01/12Smart photovoltaic panel and method for regulating power using same
2322012004355302/23/12Hybrid semiconductor device having a gan transistor and a silicon mosfet
2332012002571302/02/12System using shunt circuits to selectively bypass open loads
2342011031608612/29/11Wafer scale package for high power devices
2352011028486211/24/11Iii-nitride switching device with an emulated diode
2362011028486811/24/11High voltage iii-nitride transistor
2372011028486911/24/11High voltage durability iii-nitride hemt
2382011028495011/24/11Method for fabricating a shallow and narrow trench fetand related structures
2392011027871011/17/11Direct contact leadless package
2402011027871111/17/11Leadless package for high current devices
2412011027270511/10/11Interdigitated conductive support for gan semiconductor die
2422011027275911/10/11Vertical ldmos device and method for fabricating same
2432011027518311/10/11Enhancement mode iii-nitride fet
2442011026032210/27/11"semiconductor on semiconductor substrate multi-chip-scale package"
2452011026066810/27/11Low frequency drive control circuit and method for driving an inductive load
2462011024101910/06/11Iii-nitride power semiconductor device
2472011024467110/06/11Method for fabricating a iii-nitride semiconductor device
2482011022709009/22/11Programmable iii-nitride transistor with aluminum-doped gate
2492011022709209/22/11Iii-nitride semiconductor device


ARCHIVE: New 2014 2013 2012 2011 2010 2009



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This listing is an abstract for educational and research purposes is only meant as a recent sample of applications filed, not a comprehensive history. Freshpatents.com is not affiliated or associated with International Rectifier Corporation in any way and there may be associated servicemarks. This data is also published to the public by the USPTO and available for free on their website. Note that there may be alternative spellings for International Rectifier Corporation with additional patents listed. Browse our Agent directory for other possible listings. Page by FreshPatents.com

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