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International Rectifier Corporation
International Rectifier Corporation el Segundo Ca
International Rectifier Corporation_20100107


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International Rectifier Corporation patents

Recent patent applications related to International Rectifier Corporation. International Rectifier Corporation is listed as an Agent/Assignee. Note: International Rectifier Corporation may have other listings under different names/spellings. We're not affiliated with International Rectifier Corporation, we're just tracking patents.

ARCHIVE: New 2015 2014 2013 2012 2011 2010 2009 | Company Directory "I" | International Rectifier Corporation-related inventors

Search recent Press Releases: International Rectifier Corporation-related press releases
Count Application # Date International Rectifier Corporation patents (updated weekly) - BOOKMARK this page
12015007707403/19/15Circuit and producing an average output inductor current indicator
22015005456402/26/15Level shifter utilizing a capacitive isolation barrier
32015003512002/05/15Wafer scale package for high power devices
42015003796502/05/15Fabrication of iii-nitride semiconductor device and related structures
52015002161901/22/15Iii-nitride semiconductor device with reduced electric field between gate and drain
62015001469801/15/15Integrated iii-nitride d-mode hfet with cascoded pair half bridge
72015001470101/15/15Iii-nitride semiconductor device with reduced electric field
82015001470301/15/15Iii-nitride device with solderable front metal
92015001474001/15/15Monolithic composite iii-nitride transistor with high voltage group iv enable switch
102015000844501/08/15Iii-nitride device and fet in a package
112015000857201/08/15Power semiconductor package with multiple dies
122015000159901/01/15Power semiconductor package with non-contiguous, multi-section conductive carrier
132015000172201/01/15Semiconductor device with reduced contact resistance
142014037482512/25/14Power semiconductor device with contiguous gate trenches and offset source trenches
152014037524212/25/14Depletion mode group iii-v transistor with high voltage group iv enable switch
162014036774412/18/14Monolithic integrated composite group iii-v and group iv semiconductor device and ic
172014035368012/04/14Gallium nitride semiconductor structures with compositionally-graded transition layer
182014035372312/04/14High voltage durability iii-nitride device
192014033965111/20/14Semiconductor device with a field plate double trench having a thick bottom dielectric
202014033966911/20/14Semiconductor device with a field plate trench having a thick bottom dielectric
212014033967011/20/14Semiconductor device with a thick bottom field plate trench having a single dielectric and angled sidewalls
222014033968611/20/14Group iii-v device with a selectively modified impurity concentration
232014033287911/13/14Power semiconductor device with reduced on-resistance and increased breakdown voltage
242014031966510/30/14Power semiconductor package
252014026437309/18/14Iii-nitride heterojunction device
262014025237509/11/14Delamination and crack prevention in iii-nitride wafers
272014025321709/11/14Rf switch gate control
282014023934908/28/14Drain pad having a reduced termination electric field
292014022440908/14/14Sintering utilizing non-mechanical pressure
302014022516208/14/14Integrated half-bridge circuit with low side and high side composite switches
312014022516308/14/14Inverter circuit including short circuit protected composite switch
322014021009207/31/14Refractory metal nitride capped contact
332014021051907/31/14Combined sense signal generation and detection
342014021076807/31/14Single layer touch sensor
352014021304607/31/14Fabrication of iii-nitride layers
362014020329407/24/14Gallium nitride devices
372014020329507/24/14Integrated power device with iii-nitride half bridges
382014020341907/24/14Half-bridge package with a conductive clip
392014019746107/17/14Semiconductor structure including a spatially confined dielectric region
402014019746207/17/14Iii-nitride transistor with high resistivity substrate
412014019133707/10/14Stacked half-bridge package
422014019244107/10/14Dc/dc converter with iii-nitride switches
432014017563006/26/14Semiconductor package with multiple conductive clips
442014016711206/19/14Cascode circuit integration of group iii-n and group iv devices
452014016715206/19/14Reduced gate charge trench field-effect transistor
462014016715306/19/14Trench fet having merged gate dielectric
472014016905206/19/14Iii-nitride power conversion circuit
482014015911606/12/14Iii-nitride device having an enhanced field plate
492014014799805/29/14Ion implantation at high temperature surface equilibrium conditions
502014013165905/15/14Gallium nitride devices with aluminum nitride intermediate layer
512014013170905/15/14Semiconductor package with temperature sensor
522014013176705/15/14Dual compartment semiconductor package
532014012489005/08/14Semiconductor package having multi-phase power inverter with internal temperature sensor
542014012625605/08/14Semiconductor package having an over-temperature protection circuit utilizing multiple temperature threshold values
552014012786105/08/14Semiconductor packages utilizing leadframe panels with grooves in connecting bars
562014011751705/01/14Power quad flat no-lead (pqfn) package having control and driver circuits
572014011751805/01/14Control and driver circuits on a power quad flat no-lead (pqfn) leadframe
582014011803205/01/14Buck converter power package
592014011077604/24/14Semiconductor package including conductive carrier coupled power switches
602014011078804/24/14Power converter package including top-drain configured power fet
612014011079604/24/14Semiconductor package with conductive carrier integrated heat spreader
622014011086304/24/14Power converter package including vertically stacked driver ic
632014010339304/17/14Surface mountable power components
642014010351404/17/14Power quad flat no-lead (pqfn) package having bootstrap diodes on a common integrated circuit (ic)
652014010654804/17/14Fabrication of iii-nitride semiconductor device and related structures
662014009744604/10/14Gallium nitride devices with gallium nitride alloy intermediate layer
672014009747104/10/14Active area shaping of iii-nitride devices utilizing a field plate defined by a dielectric body
682014009749804/10/14Open source power quad flat no-lead (pqfn) leadframe
692014009753104/10/14Power quad flat no-lead (pqfn) package in a single shunt inverter circuit
702014009144904/03/14Power quad flat no-lead (pqfn) semiconductor package with leadframe islands for multi-phase power inverter
712014008443103/27/14Semiconductor package with heat spreader
722014007722203/20/14Gallium nitride devices with aluminum nitride alloy intermediate layer
732014007027803/13/14Active area shaping of iii-nitride devices utilizing multiple dielectric materials
742014007027903/13/14Active area shaping of iii-nitride devices utilizing a source-side field plate and a wider drain-side field plate
752014007028003/13/14Active area shaping of iii-nitride devices utilizing steps of source-side and drain-side field plates
762014007062703/13/14Integrated group iii-v power stage
772014007078603/13/14Power converter including integrated driver providing overcurrent protection
782014006188503/06/14Power quad flat no-lead (pqfn) package
792014005460702/27/14Group iii-v device with strain-relieving layers
802014005510902/27/14Power converter including integrated driver for depletion mode group iii-v transistor
812014004892302/20/14Semiconductor package for high power devices
822014003495902/06/14Iii-nitride semiconductor device with stepped gate
832014003500502/06/14Monolithic integrated group iii-v and group iv device
842014003839102/06/14Iii-nitride wafer fabrication
852014002836901/30/14Level shifter utilizing bidirectional signaling through a capacitive isolation barrier
862014003085401/30/14High voltage cascoded iii-nitride rectifier package
872014003085801/30/14Enhancement mode iii-nitride device
882014000866301/09/14Integrated composite group iii-v and group iv semiconductor device
892014000161401/02/14Thermally enhanced semiconductor package
902013033457412/19/13Monolithic integrated composite group iii-v and group iv device
912013033761112/19/13Thermally enhanced semiconductor package with conductive clip
922013033762612/19/13Monolithic group iii-v and group iv device
932013031652711/28/13Multi-chip-scale package
942013029987711/14/13Integrated iii-nitride and silicon device
952013027736210/24/13Power converter with over-voltage protection
962013027771110/24/13Oscillation free fast-recovery diode
972013027818110/24/13Reverse rotation of a motor configured for operation in a forward direction
982013027120110/17/13System on chip for power inverter
992013026457910/10/13Iii-nitride heterojunction device
1002013026463610/10/13Trench fet with ruggedness enhancement regions
1012013026496810/10/13Power converter having an advanced control ic
1022013025674410/03/13Igbt with buried emitter electrode
1032013025674510/03/13Deep gate trench igbt
1042013025680710/03/13Integrated dual power converter package having internal driver ic
1052013025685910/03/13Dual power converter package using external driver ic
1062013025689410/03/13Porous metallic film as die attach and interconnect
1072013025690510/03/13Monolithic power converter package with through substrate vias
1082013024888409/26/13Iii-nitride power device
1092013024907209/26/13Direct contact package for power transistors
1102013024950809/26/13Voltage regulator having an emulated ripple generator
1112013024089809/19/13Group iii-v and group iv composite switch
1122013024091109/19/13Iii-nitride multi-channel heterojunction device
1132013023420809/12/13Composite semiconductor device with active oscillation prevention
1142013022879409/05/13Stacked half-bridge package with a common leadframe
1152013022912609/05/13Electronic ballast with power factor correction
1162013021428308/22/13Power transistor having segmented gate
1172013021433008/22/13Transistor having increased breakdown voltage
1182013020712008/15/13Power device with solderable front metal
1192013019649008/01/13Method and growing a iii-nitride layer
1202013018247007/18/13Power module package having a multi-phase inverter and power factor correction
1212013017554207/11/13Group iii-v and group iv composite diode
1222013017569007/11/13Power semiconductor device with reduced contact resistance
1232013016180306/27/13Semiconductor package with conductive heat spreader
1242013014701606/13/13Semiconductor package having internal shunt and solder stop dimples
1252013014060206/06/13Power semiconductor package with conductive clip
1262013014068406/06/13Semiconductor device assembly utilizing a dbc substrate
1272013014070106/06/13Solderable contact and passivation for semiconductor dies
1282013014339906/06/13Method for forming a reliable solderable contact
1292013013443705/30/13Method for forming gallium nitride devices with conductive regions
1302013013452405/30/13Multi-transistor exposed conductive clip for semiconductor packages
1312013012689505/23/13Gallium nitride devices with vias
1322013011299005/09/13Gallium nitride devices with compositionally-graded transition layer
1332013011574605/09/13Method for fabricating a vertical ldmos device
1342013010581405/02/13Active area shaping for iii-nitride devices
1352013010595805/02/13Compact wirebonded power quad flat no-lead (pqfn) package
1362013009957904/25/13System and providing active power balancing
1372013009335604/18/13Flyback driver for use in a flyback power converter and related method
1382013007631103/28/13System for actively managing energy banks during energy transfer and related method
1392013006920803/21/13Group iii-v device structure having a selectively reduced impurity concentration
1402013004907902/28/13Small-outline package for a power transistor
1412013004981602/28/13Power saving resonant gate driver and related method
1422013002682201/31/13Energy storage system and related method
1432013001549501/17/13Stacked half-bridge power module
1442013001549901/17/13Composite semiconductor device with a soi substrate having an integrated diode
1452013001550101/17/13Nested composite diode
1462013001590501/17/13Nested composite switch
1472013000164801/03/13Gated algan/gan schottky device
1482012031310612/13/12Enhancement mode group iii-v high electron mobility transistor (hemt) and fabrication
1492012031437212/13/12Power semiconductor package with double-sided cooling
1502012030607212/06/12Semiconductor wafer with reduced thickness variation and fabricating same
1512012029275211/22/12Thermally enhanced semiconductor package with exposed parallel conductive clip
1522012029275311/22/12Multi-transistor exposed conductive clip for high power semiconductor packages
1532012029275411/22/12Common drain exposed conductive clip for high power semiconductor packages
1542012029314711/22/12Monolithic group iii-v power converter
1552012028024511/08/12High voltage cascoded iii-nitride rectifier package with stamped leadframe
1562012028024611/08/12High voltage cascoded iii-nitride rectifier package with etched leadframe
1572012028024711/08/12High voltage cascoded iii-nitride rectifier package utilizing clips on package support surface
1582012027436611/01/12Integrated power stage
1592012027512111/01/12Power module with press-fit clamps
1602012026210010/18/12Bondwireless power module with three-dimensional current routing
1612012025618810/11/12Stacked composite device including a group iii-v transistor and a group iv lateral transistor
1622012025618910/11/12Stacked composite device including a group iii-v transistor and a group iv vertical transistor
1632012025619010/11/12Stacked composite device including a group iii-v transistor and a group iv diode
1642012024856410/04/12Dual compartment semiconductor package with temperature sensor
1652012024175609/27/12High voltage composite semiconductor device with protection for a low voltage device
1662012024181909/27/12Composite semiconductor device with turn-on prevention control
1672012024182009/27/12Iii-nitride transistor with passive oscillation prevention
1682012023520909/20/12High voltage rectifier and switching circuits
1692012022917609/13/12Integrated semiconductor device
1702012022332109/06/12Iii-nitride transistor stacked with fet in a package
1712012022332209/06/12Iii-nitride transistor stacked with diode in a package
1722012022332709/06/12Programmable gate iii-nitride semiconductor device
1732012022336509/06/12Iii-nitride semiconductor structures with strain absorbing interlayer transition modules
1742012022341509/06/12Igbt power semiconductor package having a conductive clip
1752012021182508/23/12Trench mosfet and fabricating same
1762012020027508/09/12Integrated high-voltage power supply start-up circuit
1772012020054708/09/12Gate driver with multiple slopes for plasma display panels
1782012019417008/02/12Load detection for switched-mode power converters
1792012018792807/26/12Synchronous buck converter including multi-mode control for light load efficiency and related method
1802012018162407/19/12Stacked half-bridge package with a common conductive clip
1812012018167407/19/12Stacked half-bridge package with a common conductive leadframe
1822012018168107/19/12Stacked half-bridge package with a current carrying layer
1832012017568807/12/12Semiconductor package with reduced on-resistance and top metal spreading resistance with application to power transistor packaging
1842012016892207/05/12High power semiconductor package with conductive clip
1852012016892307/05/12High power semiconductor package with conductive clip on multiple transistors
1862012016892407/05/12High power semiconductor package with multiple conductive clips
1872012016892507/05/12High power semiconductor package with conductive clips and flip chip driver ic
1882012016892607/05/12High power semiconductor package with conductive clip and flip chip driver ic with integrated control transistor
1892012015335106/21/12Stress modulated group iii-v semiconductor device and related method
1902012014620506/14/12Multi-chip module (mcm) power quad flat no-lead (pqfn) semiconductor package utilizing a leadframe for electrical interconnections
1912012011922305/17/12Gallium nitride semiconductor structures with compositionally-graded transition layer
1922012010458705/03/12Direct contact semiconductor package with power transistor
1932012010458605/03/12Direct contact flip chip package with power transistors
1942012009147004/19/12Programmable gate iii-nitride power transistor
1952012006819003/22/12Gallium nitride devices with electrically conductive regions
1962012007096703/22/12Method for forming gallium nitride devices with conductive regions
1972012006172503/15/12Power semiconductor package
1982012006219903/15/12Iii-nitride power converter circuit
1992012006228103/15/12Power converter with split power supply
2002012004980103/01/12Dynamic power management system and method
2012012004983303/01/12Smart photovoltaic panel and regulating power using same
2022012004355302/23/12Hybrid semiconductor device having a gan transistor and a silicon mosfet
2032012002571302/02/12System using shunt circuits to selectively bypass open loads
2042011031608612/29/11Wafer scale package for high power devices
2052011028486211/24/11Iii-nitride switching device with an emulated diode
2062011028486811/24/11High voltage iii-nitride transistor
2072011028486911/24/11High voltage durability iii-nitride hemt
2082011028495011/24/11Method for fabricating a shallow and narrow trench fetand related structures
2092011027871011/17/11Direct contact leadless package
2102011027871111/17/11Leadless package for high current devices
2112011027270511/10/11Interdigitated conductive support for gan semiconductor die
2122011027275911/10/11Vertical ldmos device and fabricating same
2132011027518311/10/11Enhancement mode iii-nitride fet
2142011026032210/27/11"semiconductor on semiconductor substrate multi-chip-scale package"
2152011026066810/27/11Low frequency drive control circuit and driving an inductive load
2162011024101910/06/11Iii-nitride power semiconductor device
2172011024467110/06/11Method for fabricating a iii-nitride semiconductor device
2182011022709009/22/11Programmable iii-nitride transistor with aluminum-doped gate
2192011022709209/22/11Iii-nitride semiconductor device
2202011022374609/15/11Method for fabrication of iii-nitride heterojunction semiconductor device
2212011021656309/08/11Hemt/gan half-bridge circuit
2222011021033709/01/11Monolithic integration of silicon and group iii-v devices
2232011021033809/01/11Efficient high voltage switching circuits and monolithic integration of same
2242011019861108/18/11Iii-nitride power device with solderable front metal
2252011018125207/28/11Driving circuit for depletion mode semiconductor switches
2262011017555907/21/11Motor drive based on iii-nitride devices
2272011016337307/07/11Semiconductor device including a voltage controlled termination structure and fabricating same
2282011015794906/30/11Highly efficient iii-nitride power conversion circuit
2292011014016906/16/11Highly conductive source/drain contacts in iii-nitride transistors
2302011014017606/16/11Monolithic integrated composite group iii-v and group iv semiconductor device and fabricating same
2312011014351706/16/11Iii-nitride monolithic ic
2322011013325106/09/11Gated algan/gan heterojunction schottky device
2332011013457606/09/11Power delivery circuit having protection switch for reverse battery condition
2342011013632506/09/11Method for fabricating a monolithic integrated composite group iii-v and group iv semiconductor device
2352011012131305/26/11Enhancement mode iii-nitride transistors with single gate dielectric structure
2362011010896805/12/11Semiconductor package with metal straps
2372011010188005/05/11Driver circuit with an increased power factor
2382011009573604/28/11Monolithic iii-nitride power converter
2392011008431104/14/11Group iii-v semiconductor device with strain-relieving interlayers
2402011008015604/07/11Dc/dc converter with depletion-mode iii-nitride switches
2412011007437503/31/11Gate driver in buck converters
2422011005730003/10/11Direct contact leadless flip chip package for high current devices
2432011004956903/03/11Semiconductor structure including a field modulation body and fabricating same
2442011004969003/03/11Direct contract leadless package for high current devices
2452011004972003/03/11Refractory metal nitride capped electrical contact and frabricating same
2462010031469512/16/10Self-aligned vertical group iii-v transistor and fabricated same
2472010030837512/09/10Rare earth enhanced high electron mobility transistor and fabricating same
2482010030139612/02/10Asymmetrically recessed high-power and high-gain ultra-short gate hemt device
2492010025918610/14/10Buck converter with iii-nitride switch for substantially increased input-to-output voltage ratio

ARCHIVE: New 2015 2014 2013 2012 2011 2010 2009


This listing is an abstract for educational and research purposes is only meant as a recent sample of applications filed, not a comprehensive history. is not affiliated or associated with International Rectifier Corporation in any way and there may be associated servicemarks. This data is also published to the public by the USPTO and available for free on their website. Note that there may be alternative spellings for International Rectifier Corporation with additional patents listed. Browse our Agent directory for other possible listings. Page by