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International Rectifier Corporation
International Rectifier Corporation el Segundo Ca
International Rectifier Corporation_20100107

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International Rectifier Corporation patents


      
Recent patent applications related to International Rectifier Corporation. International Rectifier Corporation is listed as an Agent/Assignee. Note: International Rectifier Corporation may have other listings under different names/spellings. We're not affiliated with International Rectifier Corporation, we're just tracking patents.

ARCHIVE: New 2015 2014 2013 2012 2011 2010 2009 | Company Directory "I" | International Rectifier Corporation-related inventors


Semiconductor package with low profile switch node integrated heat spreader

International Rectifier

Semiconductor package with low profile switch node integrated heat spreader

Iii-nitride semiconductor device fabrication

International Rectifier

Iii-nitride semiconductor device fabrication

Voltage converter with vcc-less rdson current sensing circuit

International Rectifier

Voltage converter with vcc-less rdson current sensing circuit

Search recent Press Releases: International Rectifier Corporation-related press releases
Count Application # Date International Rectifier Corporation patents (updated weekly) - BOOKMARK this page
12015013714105/21/15Gallium nitride devices
22015013003605/14/15Semiconductor package with low profile switch node integrated heat spreader
32015013293305/14/15Iii-nitride semiconductor device fabrication
42015012363005/07/15Voltage converter with vcc-less rdson current sensing circuit
52015011532704/30/15Group iii-v device including a buffer termination body
62015011591104/30/15Adaptive off time control scheme for semi-resonant and hybrid converters
72015010849504/23/15Gallium nitride devices with discontinuously graded transition layer
82015009719604/09/15Integrated device including silicon and iii-nitride semiconductor devices
92015007707403/19/15Circuit and producing an average output inductor current indicator
102015005456402/26/15Level shifter utilizing a capacitive isolation barrier
112015003512002/05/15Wafer scale package for high power devices
122015003796502/05/15Fabrication of iii-nitride semiconductor device and related structures
132015002161901/22/15Iii-nitride semiconductor device with reduced electric field between gate and drain
142015001469801/15/15Integrated iii-nitride d-mode hfet with cascoded pair half bridge
152015001470101/15/15Iii-nitride semiconductor device with reduced electric field
162015001470301/15/15Iii-nitride device with solderable front metal
172015001474001/15/15Monolithic composite iii-nitride transistor with high voltage group iv enable switch
182015000844501/08/15Iii-nitride device and fet in a package
192015000857201/08/15Power semiconductor package with multiple dies
202015000159901/01/15Power semiconductor package with non-contiguous, multi-section conductive carrier
212015000172201/01/15Semiconductor device with reduced contact resistance
222014037482512/25/14Power semiconductor device with contiguous gate trenches and offset source trenches
232014037524212/25/14Depletion mode group iii-v transistor with high voltage group iv enable switch
242014036774412/18/14Monolithic integrated composite group iii-v and group iv semiconductor device and ic
252014035368012/04/14Gallium nitride semiconductor structures with compositionally-graded transition layer
262014035372312/04/14High voltage durability iii-nitride device
272014033965111/20/14Semiconductor device with a field plate double trench having a thick bottom dielectric
282014033966911/20/14Semiconductor device with a field plate trench having a thick bottom dielectric
292014033967011/20/14Semiconductor device with a thick bottom field plate trench having a single dielectric and angled sidewalls
302014033968611/20/14Group iii-v device with a selectively modified impurity concentration
312014033287911/13/14Power semiconductor device with reduced on-resistance and increased breakdown voltage
322014031966510/30/14Power semiconductor package
332014026437309/18/14Iii-nitride heterojunction device
342014025237509/11/14Delamination and crack prevention in iii-nitride wafers
352014025321709/11/14Rf switch gate control
362014023934908/28/14Drain pad having a reduced termination electric field
372014022440908/14/14Sintering utilizing non-mechanical pressure
382014022516208/14/14Integrated half-bridge circuit with low side and high side composite switches
392014022516308/14/14Inverter circuit including short circuit protected composite switch
402014021009207/31/14Refractory metal nitride capped contact
412014021051907/31/14Combined sense signal generation and detection
422014021076807/31/14Single layer touch sensor
432014021304607/31/14Fabrication of iii-nitride layers
442014020329407/24/14Gallium nitride devices
452014020329507/24/14Integrated power device with iii-nitride half bridges
462014020341907/24/14Half-bridge package with a conductive clip
472014019746107/17/14Semiconductor structure including a spatially confined dielectric region
482014019746207/17/14Iii-nitride transistor with high resistivity substrate
492014019133707/10/14Stacked half-bridge package
502014019244107/10/14Dc/dc converter with iii-nitride switches
512014017563006/26/14Semiconductor package with multiple conductive clips
522014016711206/19/14Cascode circuit integration of group iii-n and group iv devices
532014016715206/19/14Reduced gate charge trench field-effect transistor
542014016715306/19/14Trench fet having merged gate dielectric
552014016905206/19/14Iii-nitride power conversion circuit
562014015911606/12/14Iii-nitride device having an enhanced field plate
572014014799805/29/14Ion implantation at high temperature surface equilibrium conditions
582014013165905/15/14Gallium nitride devices with aluminum nitride intermediate layer
592014013170905/15/14Semiconductor package with temperature sensor
602014013176705/15/14Dual compartment semiconductor package
612014012489005/08/14Semiconductor package having multi-phase power inverter with internal temperature sensor
622014012625605/08/14Semiconductor package having an over-temperature protection circuit utilizing multiple temperature threshold values
632014012786105/08/14Semiconductor packages utilizing leadframe panels with grooves in connecting bars
642014011751705/01/14Power quad flat no-lead (pqfn) package having control and driver circuits
652014011751805/01/14Control and driver circuits on a power quad flat no-lead (pqfn) leadframe
662014011803205/01/14Buck converter power package
672014011077604/24/14Semiconductor package including conductive carrier coupled power switches
682014011078804/24/14Power converter package including top-drain configured power fet
692014011079604/24/14Semiconductor package with conductive carrier integrated heat spreader
702014011086304/24/14Power converter package including vertically stacked driver ic
712014010339304/17/14Surface mountable power components
722014010351404/17/14Power quad flat no-lead (pqfn) package having bootstrap diodes on a common integrated circuit (ic)
732014010654804/17/14Fabrication of iii-nitride semiconductor device and related structures
742014009744604/10/14Gallium nitride devices with gallium nitride alloy intermediate layer
752014009747104/10/14Active area shaping of iii-nitride devices utilizing a field plate defined by a dielectric body
762014009749804/10/14Open source power quad flat no-lead (pqfn) leadframe
772014009753104/10/14Power quad flat no-lead (pqfn) package in a single shunt inverter circuit
782014009144904/03/14Power quad flat no-lead (pqfn) semiconductor package with leadframe islands for multi-phase power inverter
792014008443103/27/14Semiconductor package with heat spreader
802014007722203/20/14Gallium nitride devices with aluminum nitride alloy intermediate layer
812014007027803/13/14Active area shaping of iii-nitride devices utilizing multiple dielectric materials
822014007027903/13/14Active area shaping of iii-nitride devices utilizing a source-side field plate and a wider drain-side field plate
832014007028003/13/14Active area shaping of iii-nitride devices utilizing steps of source-side and drain-side field plates
842014007062703/13/14Integrated group iii-v power stage
852014007078603/13/14Power converter including integrated driver providing overcurrent protection
862014006188503/06/14Power quad flat no-lead (pqfn) package
872014005460702/27/14Group iii-v device with strain-relieving layers
882014005510902/27/14Power converter including integrated driver for depletion mode group iii-v transistor
892014004892302/20/14Semiconductor package for high power devices
902014003495902/06/14Iii-nitride semiconductor device with stepped gate
912014003500502/06/14Monolithic integrated group iii-v and group iv device
922014003839102/06/14Iii-nitride wafer fabrication
932014002836901/30/14Level shifter utilizing bidirectional signaling through a capacitive isolation barrier
942014003085401/30/14High voltage cascoded iii-nitride rectifier package
952014003085801/30/14Enhancement mode iii-nitride device
962014000866301/09/14Integrated composite group iii-v and group iv semiconductor device
972014000161401/02/14Thermally enhanced semiconductor package
982013033457412/19/13Monolithic integrated composite group iii-v and group iv device
992013033761112/19/13Thermally enhanced semiconductor package with conductive clip
1002013033762612/19/13Monolithic group iii-v and group iv device
1012013031652711/28/13Multi-chip-scale package
1022013029987711/14/13Integrated iii-nitride and silicon device
1032013027736210/24/13Power converter with over-voltage protection
1042013027771110/24/13Oscillation free fast-recovery diode
1052013027818110/24/13Reverse rotation of a motor configured for operation in a forward direction
1062013027120110/17/13System on chip for power inverter
1072013026457910/10/13Iii-nitride heterojunction device
1082013026463610/10/13Trench fet with ruggedness enhancement regions
1092013026496810/10/13Power converter having an advanced control ic
1102013025674410/03/13Igbt with buried emitter electrode
1112013025674510/03/13Deep gate trench igbt
1122013025680710/03/13Integrated dual power converter package having internal driver ic
1132013025685910/03/13Dual power converter package using external driver ic
1142013025689410/03/13Porous metallic film as die attach and interconnect
1152013025690510/03/13Monolithic power converter package with through substrate vias
1162013024888409/26/13Iii-nitride power device
1172013024907209/26/13Direct contact package for power transistors
1182013024950809/26/13Voltage regulator having an emulated ripple generator
1192013024089809/19/13Group iii-v and group iv composite switch
1202013024091109/19/13Iii-nitride multi-channel heterojunction device
1212013023420809/12/13Composite semiconductor device with active oscillation prevention
1222013022879409/05/13Stacked half-bridge package with a common leadframe
1232013022912609/05/13Electronic ballast with power factor correction
1242013021428308/22/13Power transistor having segmented gate
1252013021433008/22/13Transistor having increased breakdown voltage
1262013020712008/15/13Power device with solderable front metal
1272013019649008/01/13Method and growing a iii-nitride layer
1282013018247007/18/13Power module package having a multi-phase inverter and power factor correction
1292013017554207/11/13Group iii-v and group iv composite diode
1302013017569007/11/13Power semiconductor device with reduced contact resistance
1312013016180306/27/13Semiconductor package with conductive heat spreader
1322013014701606/13/13Semiconductor package having internal shunt and solder stop dimples
1332013014060206/06/13Power semiconductor package with conductive clip
1342013014068406/06/13Semiconductor device assembly utilizing a dbc substrate
1352013014070106/06/13Solderable contact and passivation for semiconductor dies
1362013014339906/06/13Method for forming a reliable solderable contact
1372013013443705/30/13Method for forming gallium nitride devices with conductive regions
1382013013452405/30/13Multi-transistor exposed conductive clip for semiconductor packages
1392013012689505/23/13Gallium nitride devices with vias
1402013011299005/09/13Gallium nitride devices with compositionally-graded transition layer
1412013011574605/09/13Method for fabricating a vertical ldmos device
1422013010581405/02/13Active area shaping for iii-nitride devices
1432013010595805/02/13Compact wirebonded power quad flat no-lead (pqfn) package
1442013009957904/25/13System and providing active power balancing
1452013009335604/18/13Flyback driver for use in a flyback power converter and related method
1462013007631103/28/13System for actively managing energy banks during energy transfer and related method
1472013006920803/21/13Group iii-v device structure having a selectively reduced impurity concentration
1482013004907902/28/13Small-outline package for a power transistor
1492013004981602/28/13Power saving resonant gate driver and related method
1502013002682201/31/13Energy storage system and related method
1512013001549501/17/13Stacked half-bridge power module
1522013001549901/17/13Composite semiconductor device with a soi substrate having an integrated diode
1532013001550101/17/13Nested composite diode
1542013001590501/17/13Nested composite switch
1552013000164801/03/13Gated algan/gan schottky device
1562012031310612/13/12Enhancement mode group iii-v high electron mobility transistor (hemt) and fabrication
1572012031437212/13/12Power semiconductor package with double-sided cooling
1582012030607212/06/12Semiconductor wafer with reduced thickness variation and fabricating same
1592012029275211/22/12Thermally enhanced semiconductor package with exposed parallel conductive clip
1602012029275311/22/12Multi-transistor exposed conductive clip for high power semiconductor packages
1612012029275411/22/12Common drain exposed conductive clip for high power semiconductor packages
1622012029314711/22/12Monolithic group iii-v power converter
1632012028024511/08/12High voltage cascoded iii-nitride rectifier package with stamped leadframe
1642012028024611/08/12High voltage cascoded iii-nitride rectifier package with etched leadframe
1652012028024711/08/12High voltage cascoded iii-nitride rectifier package utilizing clips on package support surface
1662012027436611/01/12Integrated power stage
1672012027512111/01/12Power module with press-fit clamps
1682012026210010/18/12Bondwireless power module with three-dimensional current routing
1692012025618810/11/12Stacked composite device including a group iii-v transistor and a group iv lateral transistor
1702012025618910/11/12Stacked composite device including a group iii-v transistor and a group iv vertical transistor
1712012025619010/11/12Stacked composite device including a group iii-v transistor and a group iv diode
1722012024856410/04/12Dual compartment semiconductor package with temperature sensor
1732012024175609/27/12High voltage composite semiconductor device with protection for a low voltage device
1742012024181909/27/12Composite semiconductor device with turn-on prevention control
1752012024182009/27/12Iii-nitride transistor with passive oscillation prevention
1762012023520909/20/12High voltage rectifier and switching circuits
1772012022917609/13/12Integrated semiconductor device
1782012022332109/06/12Iii-nitride transistor stacked with fet in a package
1792012022332209/06/12Iii-nitride transistor stacked with diode in a package
1802012022332709/06/12Programmable gate iii-nitride semiconductor device
1812012022336509/06/12Iii-nitride semiconductor structures with strain absorbing interlayer transition modules
1822012022341509/06/12Igbt power semiconductor package having a conductive clip
1832012021182508/23/12Trench mosfet and fabricating same
1842012020027508/09/12Integrated high-voltage power supply start-up circuit
1852012020054708/09/12Gate driver with multiple slopes for plasma display panels
1862012019417008/02/12Load detection for switched-mode power converters
1872012018792807/26/12Synchronous buck converter including multi-mode control for light load efficiency and related method
1882012018162407/19/12Stacked half-bridge package with a common conductive clip
1892012018167407/19/12Stacked half-bridge package with a common conductive leadframe
1902012018168107/19/12Stacked half-bridge package with a current carrying layer
1912012017568807/12/12Semiconductor package with reduced on-resistance and top metal spreading resistance with application to power transistor packaging
1922012016892207/05/12High power semiconductor package with conductive clip
1932012016892307/05/12High power semiconductor package with conductive clip on multiple transistors
1942012016892407/05/12High power semiconductor package with multiple conductive clips
1952012016892507/05/12High power semiconductor package with conductive clips and flip chip driver ic
1962012016892607/05/12High power semiconductor package with conductive clip and flip chip driver ic with integrated control transistor
1972012015335106/21/12Stress modulated group iii-v semiconductor device and related method
1982012014620506/14/12Multi-chip module (mcm) power quad flat no-lead (pqfn) semiconductor package utilizing a leadframe for electrical interconnections
1992012011922305/17/12Gallium nitride semiconductor structures with compositionally-graded transition layer
2002012010458705/03/12Direct contact semiconductor package with power transistor
2012012010458605/03/12Direct contact flip chip package with power transistors
2022012009147004/19/12Programmable gate iii-nitride power transistor
2032012006819003/22/12Gallium nitride devices with electrically conductive regions
2042012007096703/22/12Method for forming gallium nitride devices with conductive regions
2052012006172503/15/12Power semiconductor package
2062012006219903/15/12Iii-nitride power converter circuit
2072012006228103/15/12Power converter with split power supply
2082012004980103/01/12Dynamic power management system and method
2092012004983303/01/12Smart photovoltaic panel and regulating power using same
2102012004355302/23/12Hybrid semiconductor device having a gan transistor and a silicon mosfet
2112012002571302/02/12System using shunt circuits to selectively bypass open loads
2122011031608612/29/11Wafer scale package for high power devices
2132011028486211/24/11Iii-nitride switching device with an emulated diode
2142011028486811/24/11High voltage iii-nitride transistor
2152011028486911/24/11High voltage durability iii-nitride hemt
2162011028495011/24/11Method for fabricating a shallow and narrow trench fetand related structures
2172011027871011/17/11Direct contact leadless package
2182011027871111/17/11Leadless package for high current devices
2192011027270511/10/11Interdigitated conductive support for gan semiconductor die
2202011027275911/10/11Vertical ldmos device and fabricating same
2212011027518311/10/11Enhancement mode iii-nitride fet
2222011026032210/27/11"semiconductor on semiconductor substrate multi-chip-scale package"
2232011026066810/27/11Low frequency drive control circuit and driving an inductive load
2242011024101910/06/11Iii-nitride power semiconductor device
2252011024467110/06/11Method for fabricating a iii-nitride semiconductor device
2262011022709009/22/11Programmable iii-nitride transistor with aluminum-doped gate
2272011022709209/22/11Iii-nitride semiconductor device
2282011022374609/15/11Method for fabrication of iii-nitride heterojunction semiconductor device
2292011021656309/08/11Hemt/gan half-bridge circuit
2302011021033709/01/11Monolithic integration of silicon and group iii-v devices
2312011021033809/01/11Efficient high voltage switching circuits and monolithic integration of same
2322011019861108/18/11Iii-nitride power device with solderable front metal
2332011018125207/28/11Driving circuit for depletion mode semiconductor switches
2342011017555907/21/11Motor drive based on iii-nitride devices
2352011016337307/07/11Semiconductor device including a voltage controlled termination structure and fabricating same
2362011015794906/30/11Highly efficient iii-nitride power conversion circuit
2372011014016906/16/11Highly conductive source/drain contacts in iii-nitride transistors
2382011014017606/16/11Monolithic integrated composite group iii-v and group iv semiconductor device and fabricating same
2392011014351706/16/11Iii-nitride monolithic ic
2402011013325106/09/11Gated algan/gan heterojunction schottky device
2412011013457606/09/11Power delivery circuit having protection switch for reverse battery condition
2422011013632506/09/11Method for fabricating a monolithic integrated composite group iii-v and group iv semiconductor device
2432011012131305/26/11Enhancement mode iii-nitride transistors with single gate dielectric structure
2442011010896805/12/11Semiconductor package with metal straps
2452011010188005/05/11Driver circuit with an increased power factor
2462011009573604/28/11Monolithic iii-nitride power converter
2472011008431104/14/11Group iii-v semiconductor device with strain-relieving interlayers
2482011008015604/07/11Dc/dc converter with depletion-mode iii-nitride switches
2492011007437503/31/11Gate driver in buck converters



ARCHIVE: New 2015 2014 2013 2012 2011 2010 2009



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