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Filing Names

International Rectifier Corporation
International Rectifier Corporation el Segundo Ca
International Rectifier Corporation_20100107


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International Rectifier Corporation patents

Recent patent applications related to International Rectifier Corporation. International Rectifier Corporation is listed as an Agent/Assignee. Note: International Rectifier Corporation may have other listings under different names/spellings. We're not affiliated with International Rectifier Corporation, we're just tracking patents.

ARCHIVE: New 2016 2015 2014 2013 2012 2011 2010 2009 | Company Directory "I" | International Rectifier Corporation-related inventors

Count Application # Date International Rectifier Corporation patents (updated weekly) - BOOKMARK this page
12016011135504/21/16 Compact single-die power semiconductor package
22016011135604/21/16 Compact multi-die power semiconductor package
32016010466504/14/16 Power converter package with integrated output inductor
42016010468804/14/16 Robust and reliable power semiconductor package
52016010469704/14/16 Compact high-voltage semiconductor package
62016010476604/14/16 Power semiconductor device with source trench and termination trench implants
72016010477304/14/16 Semiconductor structure having integrated snubber resistance and related method
82016010598304/14/16 Insertable power unit with mounting contacts for plugging into a mother board
92016010598404/14/16 Power unit with conductive slats
102016008742203/24/16 Fault and short-circuit protected output driver
112016006515603/03/16 Methods and circuitry to provide common mode transient immunity
122016006518703/03/16 Multi-level pulse generator circuitry
132016003632602/04/16 Power supply control and current emulation
142016002027901/21/16 Edge termination using guard rings between recessed field oxide regions
152016002030801/21/16 Edge termination structure having a termination charge region below a recessed field oxide region
162016002069301/21/16 Power converter utilizing a resonant half-bridge and charge pump circuit
172016001316801/14/16 Semiconductor package with integrated semiconductor devices and passive component
182016001316901/14/16 Passive component integrated with semiconductor device in semiconductor package
192016000581601/07/16 Group iii-v transistor with voltage controlled substrate
202016000582101/07/16 Group iii-v lateral transistor with backside contact
212016000584501/07/16 Group iii-v transistor utilizing a substrate having a dielectrically-filled region
222015038049712/31/15 Group iii-v device with a selectively modified impurity concentration
232015038051812/31/15 Fabrication of iii-nitride power device with reduced gate to drain charge
242015037198212/24/15 Composite group iii-v and group iv transistor having a switched substrate
252015037198612/24/15 Group iii-v hemt having a selectably floating substrate
262015037198712/24/15 Group iii-v hemt having a diode controlled substrate
272015035718212/10/15 Fabrication of iii-nitride power semiconductor device
282015035745812/10/15 Iii-nitride device with improved transconductance
292015034888412/03/15 Power semiconductor package with multi-section conductive carrier
302015034888712/03/15 Method for fabricating a semiconductor package with conductive carrier integrated heat spreader
312015034888812/03/15 Semiconductor package with integrated heat spreader
322015034030411/26/15 Power semiconductor package
332015034048311/26/15 Group iii-v device including a shield plate
342015033298811/19/15 Semiconductor package with multiple dies
352015033316511/19/15 Enhancement mode iii-nitride transistor
362015032556611/12/15 Composite device with integrated diode
372015032568511/12/15 Power semiconductor device with low rdson and high breakdown voltage
382015031114510/29/15 Semiconductor package with switch node integrated heat spreader
392015029505410/15/15 Transistor with elevated drain termination
402015028779210/08/15 Iii-nitride based semiconductor structure
412015027982110/01/15 Power semiconductor package with a common conductive clip
422015027994610/01/15 Power semiconductor device with embedded field electrodes
432015027020209/24/15 Semiconductor package with integrated die paddles for power stage
442015027024909/24/15 Semiconductor package with via-coupled power transistors
452015026296009/17/15 Power semiconductor package with conductive clips
462015025537609/10/15 Power semiconductor package
472015025538209/10/15 Semiconductor package with conductive clip
482015025538409/10/15 Electrical connectivity of die to a host substrate
492015023593208/20/15 Compact power quad flat no-lead (pqfn) package
502015022861008/13/15 Semiconductor package including a power stage and integrated output inductor
512015022158808/06/15 Surface mountable power components
522015020743207/23/15 System on chip with power switches
532015020749507/23/15 Power converter with split voltage supply
542015019436907/09/15 Semiconductor package with conductive clips
552015018788007/02/15 Semiconductor structure with compositionally-graded transition layer
562015017117206/18/15 High performance iii-nitride power device
572015016226106/11/15 Power semiconductor package with integrated heat spreader and partially etched conductive carrier
582015016229706/11/15 Power converter package with an integrated output inductor
592015016230306/11/15 Array based fabrication of power semiconductor package with integrated heat spreader
602015016232106/11/15 Composite power device with esd protection clamp
612015016283206/11/15 Group iii-v voltage converter with monolithically integrated level shifter, high side driver, and high side power switch
622015015527506/04/15 Enhancement mode iii-nitride switch
632015015535806/04/15 Group iii-v transistor with semiconductor field plate
642015013714105/21/15 Gallium nitride devices
652015013003605/14/15 Semiconductor package with low profile switch node integrated heat spreader
662015013293305/14/15 Iii-nitride semiconductor device fabrication
672015012363005/07/15 Voltage converter with vcc-less rdson current sensing circuit
682015011532704/30/15 Group iii-v device including a buffer termination body
692015011591104/30/15 Adaptive off time control scheme for semi-resonant and hybrid converters
702015010849504/23/15 Gallium nitride devices with discontinuously graded transition layer
712015009719604/09/15 Integrated device including silicon and iii-nitride semiconductor devices
722015007707403/19/15 Circuit and producing an average output inductor current indicator
732015005456402/26/15 Level shifter utilizing a capacitive isolation barrier
742015003512002/05/15 Wafer scale package for high power devices
752015003796502/05/15 Fabrication of iii-nitride semiconductor device and related structures
762015002161901/22/15 Iii-nitride semiconductor device with reduced electric field between gate and drain
772015001469801/15/15 Integrated iii-nitride d-mode hfet with cascoded pair half bridge
782015001470101/15/15 Iii-nitride semiconductor device with reduced electric field
792015001470301/15/15 Iii-nitride device with solderable front metal
802015001474001/15/15 Monolithic composite iii-nitride transistor with high voltage group iv enable switch
812015000844501/08/15 Iii-nitride device and fet in a package
822015000857201/08/15 Power semiconductor package with multiple dies
832015000159901/01/15 Power semiconductor package with non-contiguous, multi-section conductive carrier
842015000172201/01/15 Semiconductor device with reduced contact resistance
852014037482512/25/14 Power semiconductor device with contiguous gate trenches and offset source trenches
862014037524212/25/14 Depletion mode group iii-v transistor with high voltage group iv enable switch
872014036774412/18/14 Monolithic integrated composite group iii-v and group iv semiconductor device and ic
882014035368012/04/14 Gallium nitride semiconductor structures with compositionally-graded transition layer
892014035372312/04/14 High voltage durability iii-nitride device
902014033965111/20/14 Semiconductor device with a field plate double trench having a thick bottom dielectric
912014033966911/20/14 Semiconductor device with a field plate trench having a thick bottom dielectric
922014033967011/20/14 Semiconductor device with a thick bottom field plate trench having a single dielectric and angled sidewalls
932014033968611/20/14 Group iii-v device with a selectively modified impurity concentration
942014033287911/13/14 Power semiconductor device with reduced on-resistance and increased breakdown voltage
952014031966510/30/14 Power semiconductor package
962014026437309/18/14 Iii-nitride heterojunction device
972014025237509/11/14 Delamination and crack prevention in iii-nitride wafers
982014025321709/11/14 Rf switch gate control
992014023934908/28/14 Drain pad having a reduced termination electric field
1002014022440908/14/14 Sintering utilizing non-mechanical pressure
1012014022516208/14/14 Integrated half-bridge circuit with low side and high side composite switches
1022014022516308/14/14 Inverter circuit including short circuit protected composite switch
1032014021009207/31/14 Refractory metal nitride capped contact
1042014021051907/31/14 Combined sense signal generation and detection
1052014021076807/31/14 Single layer touch sensor
1062014021304607/31/14 Fabrication of iii-nitride layers
1072014020329407/24/14 Gallium nitride devices
1082014020329507/24/14 Integrated power device with iii-nitride half bridges
1092014020341907/24/14 Half-bridge package with a conductive clip
1102014019746107/17/14 Semiconductor structure including a spatially confined dielectric region
1112014019746207/17/14 Iii-nitride transistor with high resistivity substrate
1122014019133707/10/14 Stacked half-bridge package
1132014019244107/10/14 Dc/dc converter with iii-nitride switches
1142014017563006/26/14 Semiconductor package with multiple conductive clips
1152014016711206/19/14 Cascode circuit integration of group iii-n and group iv devices
1162014016715206/19/14 Reduced gate charge trench field-effect transistor
1172014016715306/19/14 Trench fet having merged gate dielectric
1182014016905206/19/14 Iii-nitride power conversion circuit
1192014015911606/12/14 Iii-nitride device having an enhanced field plate
1202014014799805/29/14 Ion implantation at high temperature surface equilibrium conditions
1212014013165905/15/14 Gallium nitride devices with aluminum nitride intermediate layer
1222014013170905/15/14 Semiconductor package with temperature sensor
1232014013176705/15/14 Dual compartment semiconductor package
1242014012489005/08/14 Semiconductor package having multi-phase power inverter with internal temperature sensor
1252014012625605/08/14 Semiconductor package having an over-temperature protection circuit utilizing multiple temperature threshold values
1262014012786105/08/14 Semiconductor packages utilizing leadframe panels with grooves in connecting bars
1272014011751705/01/14 Power quad flat no-lead (pqfn) package having control and driver circuits
1282014011751805/01/14 Control and driver circuits on a power quad flat no-lead (pqfn) leadframe
1292014011803205/01/14 Buck converter power package
1302014011077604/24/14 Semiconductor package including conductive carrier coupled power switches
1312014011078804/24/14 Power converter package including top-drain configured power fet
1322014011079604/24/14 Semiconductor package with conductive carrier integrated heat spreader
1332014011086304/24/14 Power converter package including vertically stacked driver ic
1342014010339304/17/14 Surface mountable power components
1352014010351404/17/14 Power quad flat no-lead (pqfn) package having bootstrap diodes on a common integrated circuit (ic)
1362014010654804/17/14 Fabrication of iii-nitride semiconductor device and related structures
1372014009744604/10/14 Gallium nitride devices with gallium nitride alloy intermediate layer
1382014009747104/10/14 Active area shaping of iii-nitride devices utilizing a field plate defined by a dielectric body
1392014009749804/10/14 Open source power quad flat no-lead (pqfn) leadframe
1402014009753104/10/14 Power quad flat no-lead (pqfn) package in a single shunt inverter circuit
1412014009144904/03/14 Power quad flat no-lead (pqfn) semiconductor package with leadframe islands for multi-phase power inverter
1422014008443103/27/14 Semiconductor package with heat spreader
1432014007722203/20/14 Gallium nitride devices with aluminum nitride alloy intermediate layer
1442014007027803/13/14 Active area shaping of iii-nitride devices utilizing multiple dielectric materials
1452014007027903/13/14 Active area shaping of iii-nitride devices utilizing a source-side field plate and a wider drain-side field plate
1462014007028003/13/14 Active area shaping of iii-nitride devices utilizing steps of source-side and drain-side field plates
1472014007062703/13/14 Integrated group iii-v power stage
1482014007078603/13/14 Power converter including integrated driver providing overcurrent protection
1492014006188503/06/14 Power quad flat no-lead (pqfn) package
1502014005460702/27/14 Group iii-v device with strain-relieving layers
1512014005510902/27/14 Power converter including integrated driver for depletion mode group iii-v transistor
1522014004892302/20/14 Semiconductor package for high power devices
1532014003495902/06/14 Iii-nitride semiconductor device with stepped gate
1542014003500502/06/14 Monolithic integrated group iii-v and group iv device
1552014003839102/06/14 Iii-nitride wafer fabrication
1562014002836901/30/14 Level shifter utilizing bidirectional signaling through a capacitive isolation barrier
1572014003085401/30/14 High voltage cascoded iii-nitride rectifier package
1582014003085801/30/14 Enhancement mode iii-nitride device
1592014000866301/09/14 Integrated composite group iii-v and group iv semiconductor device
1602014000161401/02/14 Thermally enhanced semiconductor package
1612013033457412/19/13 Monolithic integrated composite group iii-v and group iv device
1622013033761112/19/13 Thermally enhanced semiconductor package with conductive clip
1632013033762612/19/13 Monolithic group iii-v and group iv device
1642013031652711/28/13 Multi-chip-scale package
1652013029987711/14/13 Integrated iii-nitride and silicon device
1662013027736210/24/13 Power converter with over-voltage protection
1672013027771110/24/13 Oscillation free fast-recovery diode
1682013027818110/24/13 Reverse rotation of a motor configured for operation in a forward direction
1692013027120110/17/13 System on chip for power inverter
1702013026457910/10/13 Iii-nitride heterojunction device
1712013026463610/10/13 Trench fet with ruggedness enhancement regions
1722013026496810/10/13 Power converter having an advanced control ic
1732013025674410/03/13 Igbt with buried emitter electrode
1742013025674510/03/13 Deep gate trench igbt
1752013025680710/03/13 Integrated dual power converter package having internal driver ic
1762013025685910/03/13 Dual power converter package using external driver ic
1772013025689410/03/13 Porous metallic film as die attach and interconnect
1782013025690510/03/13 Monolithic power converter package with through substrate vias
1792013024888409/26/13 Iii-nitride power device
1802013024907209/26/13 Direct contact package for power transistors
1812013024950809/26/13 Voltage regulator having an emulated ripple generator
1822013024089809/19/13 Group iii-v and group iv composite switch
1832013024091109/19/13 Iii-nitride multi-channel heterojunction device
1842013023420809/12/13 Composite semiconductor device with active oscillation prevention
1852013022879409/05/13 Stacked half-bridge package with a common leadframe
1862013022912609/05/13 Electronic ballast with power factor correction
1872013021428308/22/13 Power transistor having segmented gate
1882013021433008/22/13 Transistor having increased breakdown voltage
1892013020712008/15/13 Power device with solderable front metal
1902013019649008/01/13 Method and growing a iii-nitride layer
1912013018247007/18/13 Power module package having a multi-phase inverter and power factor correction
1922013017554207/11/13 Group iii-v and group iv composite diode
1932013017569007/11/13 Power semiconductor device with reduced contact resistance
1942013016180306/27/13 Semiconductor package with conductive heat spreader
1952013014701606/13/13 Semiconductor package having internal shunt and solder stop dimples
1962013014060206/06/13 Power semiconductor package with conductive clip
1972013014068406/06/13 Semiconductor device assembly utilizing a dbc substrate
1982013014070106/06/13 Solderable contact and passivation for semiconductor dies
1992013014339906/06/13 Method for forming a reliable solderable contact
2002013013443705/30/13 Method for forming gallium nitride devices with conductive regions
2012013013452405/30/13 Multi-transistor exposed conductive clip for semiconductor packages
2022013012689505/23/13 Gallium nitride devices with vias
2032013011299005/09/13 Gallium nitride devices with compositionally-graded transition layer
2042013011574605/09/13 Method for fabricating a vertical ldmos device
2052013010581405/02/13 Active area shaping for iii-nitride devices
2062013010595805/02/13 Compact wirebonded power quad flat no-lead (pqfn) package
2072013009957904/25/13 System and providing active power balancing
2082013009335604/18/13 Flyback driver for use in a flyback power converter and related method
2092013007631103/28/13 System for actively managing energy banks during energy transfer and related method
2102013006920803/21/13 Group iii-v device structure having a selectively reduced impurity concentration
2112013004907902/28/13 Small-outline package for a power transistor
2122013004981602/28/13 Power saving resonant gate driver and related method
2132013002682201/31/13 Energy storage system and related method
2142013001549501/17/13 Stacked half-bridge power module
2152013001549901/17/13 Composite semiconductor device with a soi substrate having an integrated diode
2162013001550101/17/13 Nested composite diode
2172013001590501/17/13 Nested composite switch
2182013000164801/03/13 Gated algan/gan schottky device
2192012031310612/13/12 Enhancement mode group iii-v high electron mobility transistor (hemt) and fabrication
2202012031437212/13/12 Power semiconductor package with double-sided cooling
2212012030607212/06/12 Semiconductor wafer with reduced thickness variation and fabricating same
2222012029275211/22/12 Thermally enhanced semiconductor package with exposed parallel conductive clip
2232012029275311/22/12 Multi-transistor exposed conductive clip for high power semiconductor packages
2242012029275411/22/12 Common drain exposed conductive clip for high power semiconductor packages
2252012029314711/22/12 Monolithic group iii-v power converter
2262012028024511/08/12 High voltage cascoded iii-nitride rectifier package with stamped leadframe
2272012028024611/08/12 High voltage cascoded iii-nitride rectifier package with etched leadframe
2282012028024711/08/12 High voltage cascoded iii-nitride rectifier package utilizing clips on package support surface
2292012027436611/01/12 Integrated power stage
2302012027512111/01/12 Power module with press-fit clamps
2312012026210010/18/12 Bondwireless power module with three-dimensional current routing
2322012025618810/11/12 Stacked composite device including a group iii-v transistor and a group iv lateral transistor
2332012025618910/11/12 Stacked composite device including a group iii-v transistor and a group iv vertical transistor
2342012025619010/11/12 Stacked composite device including a group iii-v transistor and a group iv diode
2352012024856410/04/12 Dual compartment semiconductor package with temperature sensor
2362012024175609/27/12 High voltage composite semiconductor device with protection for a low voltage device
2372012024181909/27/12 Composite semiconductor device with turn-on prevention control
2382012024182009/27/12 Iii-nitride transistor with passive oscillation prevention
2392012023520909/20/12 High voltage rectifier and switching circuits
2402012022917609/13/12 Integrated semiconductor device
2412012022332109/06/12 Iii-nitride transistor stacked with fet in a package
2422012022332209/06/12 Iii-nitride transistor stacked with diode in a package
2432012022332709/06/12 Programmable gate iii-nitride semiconductor device
2442012022336509/06/12 Iii-nitride semiconductor structures with strain absorbing interlayer transition modules
2452012022341509/06/12 Igbt power semiconductor package having a conductive clip
2462012021182508/23/12 Trench mosfet and fabricating same
2472012020027508/09/12 Integrated high-voltage power supply start-up circuit
2482012020054708/09/12 Gate driver with multiple slopes for plasma display panels
2492012019417008/02/12 Load detection for switched-mode power converters

ARCHIVE: New 2016 2015 2014 2013 2012 2011 2010 2009


This listing is an abstract for educational and research purposes is only meant as a recent sample of applications filed, not a comprehensive history. is not affiliated or associated with International Rectifier Corporation in any way and there may be associated servicemarks. This data is also published to the public by the USPTO and available for free on their website. Note that there may be alternative spellings for International Rectifier Corporation with additional patents listed. Browse our Agent directory for other possible listings. Page by