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International Rectifier Corporation
International Rectifier Corporation el Segundo Ca
International Rectifier Corporation_20100107


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International Rectifier Corporation patents

Recent patent applications related to International Rectifier Corporation. International Rectifier Corporation is listed as an Agent/Assignee. Note: International Rectifier Corporation may have other listings under different names/spellings. We're not affiliated with International Rectifier Corporation, we're just tracking patents.

ARCHIVE: New 2015 2014 2013 2012 2011 2010 2009 | Company Directory "I" | International Rectifier Corporation-related inventors

Search recent Press Releases: International Rectifier Corporation-related press releases
Count Application # Date International Rectifier Corporation patents (updated weekly) - BOOKMARK this page
12015009719604/09/15Integrated device including silicon and iii-nitride semiconductor devices
22015007707403/19/15Circuit and producing an average output inductor current indicator
32015005456402/26/15Level shifter utilizing a capacitive isolation barrier
42015003512002/05/15Wafer scale package for high power devices
52015003796502/05/15Fabrication of iii-nitride semiconductor device and related structures
62015002161901/22/15Iii-nitride semiconductor device with reduced electric field between gate and drain
72015001469801/15/15Integrated iii-nitride d-mode hfet with cascoded pair half bridge
82015001470101/15/15Iii-nitride semiconductor device with reduced electric field
92015001470301/15/15Iii-nitride device with solderable front metal
102015001474001/15/15Monolithic composite iii-nitride transistor with high voltage group iv enable switch
112015000844501/08/15Iii-nitride device and fet in a package
122015000857201/08/15Power semiconductor package with multiple dies
132015000159901/01/15Power semiconductor package with non-contiguous, multi-section conductive carrier
142015000172201/01/15Semiconductor device with reduced contact resistance
152014037482512/25/14Power semiconductor device with contiguous gate trenches and offset source trenches
162014037524212/25/14Depletion mode group iii-v transistor with high voltage group iv enable switch
172014036774412/18/14Monolithic integrated composite group iii-v and group iv semiconductor device and ic
182014035368012/04/14Gallium nitride semiconductor structures with compositionally-graded transition layer
192014035372312/04/14High voltage durability iii-nitride device
202014033965111/20/14Semiconductor device with a field plate double trench having a thick bottom dielectric
212014033966911/20/14Semiconductor device with a field plate trench having a thick bottom dielectric
222014033967011/20/14Semiconductor device with a thick bottom field plate trench having a single dielectric and angled sidewalls
232014033968611/20/14Group iii-v device with a selectively modified impurity concentration
242014033287911/13/14Power semiconductor device with reduced on-resistance and increased breakdown voltage
252014031966510/30/14Power semiconductor package
262014026437309/18/14Iii-nitride heterojunction device
272014025237509/11/14Delamination and crack prevention in iii-nitride wafers
282014025321709/11/14Rf switch gate control
292014023934908/28/14Drain pad having a reduced termination electric field
302014022440908/14/14Sintering utilizing non-mechanical pressure
312014022516208/14/14Integrated half-bridge circuit with low side and high side composite switches
322014022516308/14/14Inverter circuit including short circuit protected composite switch
332014021009207/31/14Refractory metal nitride capped contact
342014021051907/31/14Combined sense signal generation and detection
352014021076807/31/14Single layer touch sensor
362014021304607/31/14Fabrication of iii-nitride layers
372014020329407/24/14Gallium nitride devices
382014020329507/24/14Integrated power device with iii-nitride half bridges
392014020341907/24/14Half-bridge package with a conductive clip
402014019746107/17/14Semiconductor structure including a spatially confined dielectric region
412014019746207/17/14Iii-nitride transistor with high resistivity substrate
422014019133707/10/14Stacked half-bridge package
432014019244107/10/14Dc/dc converter with iii-nitride switches
442014017563006/26/14Semiconductor package with multiple conductive clips
452014016711206/19/14Cascode circuit integration of group iii-n and group iv devices
462014016715206/19/14Reduced gate charge trench field-effect transistor
472014016715306/19/14Trench fet having merged gate dielectric
482014016905206/19/14Iii-nitride power conversion circuit
492014015911606/12/14Iii-nitride device having an enhanced field plate
502014014799805/29/14Ion implantation at high temperature surface equilibrium conditions
512014013165905/15/14Gallium nitride devices with aluminum nitride intermediate layer
522014013170905/15/14Semiconductor package with temperature sensor
532014013176705/15/14Dual compartment semiconductor package
542014012489005/08/14Semiconductor package having multi-phase power inverter with internal temperature sensor
552014012625605/08/14Semiconductor package having an over-temperature protection circuit utilizing multiple temperature threshold values
562014012786105/08/14Semiconductor packages utilizing leadframe panels with grooves in connecting bars
572014011751705/01/14Power quad flat no-lead (pqfn) package having control and driver circuits
582014011751805/01/14Control and driver circuits on a power quad flat no-lead (pqfn) leadframe
592014011803205/01/14Buck converter power package
602014011077604/24/14Semiconductor package including conductive carrier coupled power switches
612014011078804/24/14Power converter package including top-drain configured power fet
622014011079604/24/14Semiconductor package with conductive carrier integrated heat spreader
632014011086304/24/14Power converter package including vertically stacked driver ic
642014010339304/17/14Surface mountable power components
652014010351404/17/14Power quad flat no-lead (pqfn) package having bootstrap diodes on a common integrated circuit (ic)
662014010654804/17/14Fabrication of iii-nitride semiconductor device and related structures
672014009744604/10/14Gallium nitride devices with gallium nitride alloy intermediate layer
682014009747104/10/14Active area shaping of iii-nitride devices utilizing a field plate defined by a dielectric body
692014009749804/10/14Open source power quad flat no-lead (pqfn) leadframe
702014009753104/10/14Power quad flat no-lead (pqfn) package in a single shunt inverter circuit
712014009144904/03/14Power quad flat no-lead (pqfn) semiconductor package with leadframe islands for multi-phase power inverter
722014008443103/27/14Semiconductor package with heat spreader
732014007722203/20/14Gallium nitride devices with aluminum nitride alloy intermediate layer
742014007027803/13/14Active area shaping of iii-nitride devices utilizing multiple dielectric materials
752014007027903/13/14Active area shaping of iii-nitride devices utilizing a source-side field plate and a wider drain-side field plate
762014007028003/13/14Active area shaping of iii-nitride devices utilizing steps of source-side and drain-side field plates
772014007062703/13/14Integrated group iii-v power stage
782014007078603/13/14Power converter including integrated driver providing overcurrent protection
792014006188503/06/14Power quad flat no-lead (pqfn) package
802014005460702/27/14Group iii-v device with strain-relieving layers
812014005510902/27/14Power converter including integrated driver for depletion mode group iii-v transistor
822014004892302/20/14Semiconductor package for high power devices
832014003495902/06/14Iii-nitride semiconductor device with stepped gate
842014003500502/06/14Monolithic integrated group iii-v and group iv device
852014003839102/06/14Iii-nitride wafer fabrication
862014002836901/30/14Level shifter utilizing bidirectional signaling through a capacitive isolation barrier
872014003085401/30/14High voltage cascoded iii-nitride rectifier package
882014003085801/30/14Enhancement mode iii-nitride device
892014000866301/09/14Integrated composite group iii-v and group iv semiconductor device
902014000161401/02/14Thermally enhanced semiconductor package
912013033457412/19/13Monolithic integrated composite group iii-v and group iv device
922013033761112/19/13Thermally enhanced semiconductor package with conductive clip
932013033762612/19/13Monolithic group iii-v and group iv device
942013031652711/28/13Multi-chip-scale package
952013029987711/14/13Integrated iii-nitride and silicon device
962013027736210/24/13Power converter with over-voltage protection
972013027771110/24/13Oscillation free fast-recovery diode
982013027818110/24/13Reverse rotation of a motor configured for operation in a forward direction
992013027120110/17/13System on chip for power inverter
1002013026457910/10/13Iii-nitride heterojunction device
1012013026463610/10/13Trench fet with ruggedness enhancement regions
1022013026496810/10/13Power converter having an advanced control ic
1032013025674410/03/13Igbt with buried emitter electrode
1042013025674510/03/13Deep gate trench igbt
1052013025680710/03/13Integrated dual power converter package having internal driver ic
1062013025685910/03/13Dual power converter package using external driver ic
1072013025689410/03/13Porous metallic film as die attach and interconnect
1082013025690510/03/13Monolithic power converter package with through substrate vias
1092013024888409/26/13Iii-nitride power device
1102013024907209/26/13Direct contact package for power transistors
1112013024950809/26/13Voltage regulator having an emulated ripple generator
1122013024089809/19/13Group iii-v and group iv composite switch
1132013024091109/19/13Iii-nitride multi-channel heterojunction device
1142013023420809/12/13Composite semiconductor device with active oscillation prevention
1152013022879409/05/13Stacked half-bridge package with a common leadframe
1162013022912609/05/13Electronic ballast with power factor correction
1172013021428308/22/13Power transistor having segmented gate
1182013021433008/22/13Transistor having increased breakdown voltage
1192013020712008/15/13Power device with solderable front metal
1202013019649008/01/13Method and growing a iii-nitride layer
1212013018247007/18/13Power module package having a multi-phase inverter and power factor correction
1222013017554207/11/13Group iii-v and group iv composite diode
1232013017569007/11/13Power semiconductor device with reduced contact resistance
1242013016180306/27/13Semiconductor package with conductive heat spreader
1252013014701606/13/13Semiconductor package having internal shunt and solder stop dimples
1262013014060206/06/13Power semiconductor package with conductive clip
1272013014068406/06/13Semiconductor device assembly utilizing a dbc substrate
1282013014070106/06/13Solderable contact and passivation for semiconductor dies
1292013014339906/06/13Method for forming a reliable solderable contact
1302013013443705/30/13Method for forming gallium nitride devices with conductive regions
1312013013452405/30/13Multi-transistor exposed conductive clip for semiconductor packages
1322013012689505/23/13Gallium nitride devices with vias
1332013011299005/09/13Gallium nitride devices with compositionally-graded transition layer
1342013011574605/09/13Method for fabricating a vertical ldmos device
1352013010581405/02/13Active area shaping for iii-nitride devices
1362013010595805/02/13Compact wirebonded power quad flat no-lead (pqfn) package
1372013009957904/25/13System and providing active power balancing
1382013009335604/18/13Flyback driver for use in a flyback power converter and related method
1392013007631103/28/13System for actively managing energy banks during energy transfer and related method
1402013006920803/21/13Group iii-v device structure having a selectively reduced impurity concentration
1412013004907902/28/13Small-outline package for a power transistor
1422013004981602/28/13Power saving resonant gate driver and related method
1432013002682201/31/13Energy storage system and related method
1442013001549501/17/13Stacked half-bridge power module
1452013001549901/17/13Composite semiconductor device with a soi substrate having an integrated diode
1462013001550101/17/13Nested composite diode
1472013001590501/17/13Nested composite switch
1482013000164801/03/13Gated algan/gan schottky device
1492012031310612/13/12Enhancement mode group iii-v high electron mobility transistor (hemt) and fabrication
1502012031437212/13/12Power semiconductor package with double-sided cooling
1512012030607212/06/12Semiconductor wafer with reduced thickness variation and fabricating same
1522012029275211/22/12Thermally enhanced semiconductor package with exposed parallel conductive clip
1532012029275311/22/12Multi-transistor exposed conductive clip for high power semiconductor packages
1542012029275411/22/12Common drain exposed conductive clip for high power semiconductor packages
1552012029314711/22/12Monolithic group iii-v power converter
1562012028024511/08/12High voltage cascoded iii-nitride rectifier package with stamped leadframe
1572012028024611/08/12High voltage cascoded iii-nitride rectifier package with etched leadframe
1582012028024711/08/12High voltage cascoded iii-nitride rectifier package utilizing clips on package support surface
1592012027436611/01/12Integrated power stage
1602012027512111/01/12Power module with press-fit clamps
1612012026210010/18/12Bondwireless power module with three-dimensional current routing
1622012025618810/11/12Stacked composite device including a group iii-v transistor and a group iv lateral transistor
1632012025618910/11/12Stacked composite device including a group iii-v transistor and a group iv vertical transistor
1642012025619010/11/12Stacked composite device including a group iii-v transistor and a group iv diode
1652012024856410/04/12Dual compartment semiconductor package with temperature sensor
1662012024175609/27/12High voltage composite semiconductor device with protection for a low voltage device
1672012024181909/27/12Composite semiconductor device with turn-on prevention control
1682012024182009/27/12Iii-nitride transistor with passive oscillation prevention
1692012023520909/20/12High voltage rectifier and switching circuits
1702012022917609/13/12Integrated semiconductor device
1712012022332109/06/12Iii-nitride transistor stacked with fet in a package
1722012022332209/06/12Iii-nitride transistor stacked with diode in a package
1732012022332709/06/12Programmable gate iii-nitride semiconductor device
1742012022336509/06/12Iii-nitride semiconductor structures with strain absorbing interlayer transition modules
1752012022341509/06/12Igbt power semiconductor package having a conductive clip
1762012021182508/23/12Trench mosfet and fabricating same
1772012020027508/09/12Integrated high-voltage power supply start-up circuit
1782012020054708/09/12Gate driver with multiple slopes for plasma display panels
1792012019417008/02/12Load detection for switched-mode power converters
1802012018792807/26/12Synchronous buck converter including multi-mode control for light load efficiency and related method
1812012018162407/19/12Stacked half-bridge package with a common conductive clip
1822012018167407/19/12Stacked half-bridge package with a common conductive leadframe
1832012018168107/19/12Stacked half-bridge package with a current carrying layer
1842012017568807/12/12Semiconductor package with reduced on-resistance and top metal spreading resistance with application to power transistor packaging
1852012016892207/05/12High power semiconductor package with conductive clip
1862012016892307/05/12High power semiconductor package with conductive clip on multiple transistors
1872012016892407/05/12High power semiconductor package with multiple conductive clips
1882012016892507/05/12High power semiconductor package with conductive clips and flip chip driver ic
1892012016892607/05/12High power semiconductor package with conductive clip and flip chip driver ic with integrated control transistor
1902012015335106/21/12Stress modulated group iii-v semiconductor device and related method
1912012014620506/14/12Multi-chip module (mcm) power quad flat no-lead (pqfn) semiconductor package utilizing a leadframe for electrical interconnections
1922012011922305/17/12Gallium nitride semiconductor structures with compositionally-graded transition layer
1932012010458705/03/12Direct contact semiconductor package with power transistor
1942012010458605/03/12Direct contact flip chip package with power transistors
1952012009147004/19/12Programmable gate iii-nitride power transistor
1962012006819003/22/12Gallium nitride devices with electrically conductive regions
1972012007096703/22/12Method for forming gallium nitride devices with conductive regions
1982012006172503/15/12Power semiconductor package
1992012006219903/15/12Iii-nitride power converter circuit
2002012006228103/15/12Power converter with split power supply
2012012004980103/01/12Dynamic power management system and method
2022012004983303/01/12Smart photovoltaic panel and regulating power using same
2032012004355302/23/12Hybrid semiconductor device having a gan transistor and a silicon mosfet
2042012002571302/02/12System using shunt circuits to selectively bypass open loads
2052011031608612/29/11Wafer scale package for high power devices
2062011028486211/24/11Iii-nitride switching device with an emulated diode
2072011028486811/24/11High voltage iii-nitride transistor
2082011028486911/24/11High voltage durability iii-nitride hemt
2092011028495011/24/11Method for fabricating a shallow and narrow trench fetand related structures
2102011027871011/17/11Direct contact leadless package
2112011027871111/17/11Leadless package for high current devices
2122011027270511/10/11Interdigitated conductive support for gan semiconductor die
2132011027275911/10/11Vertical ldmos device and fabricating same
2142011027518311/10/11Enhancement mode iii-nitride fet
2152011026032210/27/11"semiconductor on semiconductor substrate multi-chip-scale package"
2162011026066810/27/11Low frequency drive control circuit and driving an inductive load
2172011024101910/06/11Iii-nitride power semiconductor device
2182011024467110/06/11Method for fabricating a iii-nitride semiconductor device
2192011022709009/22/11Programmable iii-nitride transistor with aluminum-doped gate
2202011022709209/22/11Iii-nitride semiconductor device
2212011022374609/15/11Method for fabrication of iii-nitride heterojunction semiconductor device
2222011021656309/08/11Hemt/gan half-bridge circuit
2232011021033709/01/11Monolithic integration of silicon and group iii-v devices
2242011021033809/01/11Efficient high voltage switching circuits and monolithic integration of same
2252011019861108/18/11Iii-nitride power device with solderable front metal
2262011018125207/28/11Driving circuit for depletion mode semiconductor switches
2272011017555907/21/11Motor drive based on iii-nitride devices
2282011016337307/07/11Semiconductor device including a voltage controlled termination structure and fabricating same
2292011015794906/30/11Highly efficient iii-nitride power conversion circuit
2302011014016906/16/11Highly conductive source/drain contacts in iii-nitride transistors
2312011014017606/16/11Monolithic integrated composite group iii-v and group iv semiconductor device and fabricating same
2322011014351706/16/11Iii-nitride monolithic ic
2332011013325106/09/11Gated algan/gan heterojunction schottky device
2342011013457606/09/11Power delivery circuit having protection switch for reverse battery condition
2352011013632506/09/11Method for fabricating a monolithic integrated composite group iii-v and group iv semiconductor device
2362011012131305/26/11Enhancement mode iii-nitride transistors with single gate dielectric structure
2372011010896805/12/11Semiconductor package with metal straps
2382011010188005/05/11Driver circuit with an increased power factor
2392011009573604/28/11Monolithic iii-nitride power converter
2402011008431104/14/11Group iii-v semiconductor device with strain-relieving interlayers
2412011008015604/07/11Dc/dc converter with depletion-mode iii-nitride switches
2422011007437503/31/11Gate driver in buck converters
2432011005730003/10/11Direct contact leadless flip chip package for high current devices
2442011004956903/03/11Semiconductor structure including a field modulation body and fabricating same
2452011004969003/03/11Direct contract leadless package for high current devices
2462011004972003/03/11Refractory metal nitride capped electrical contact and frabricating same
2472010031469512/16/10Self-aligned vertical group iii-v transistor and fabricated same
2482010030837512/09/10Rare earth enhanced high electron mobility transistor and fabricating same
2492010030139612/02/10Asymmetrically recessed high-power and high-gain ultra-short gate hemt device

ARCHIVE: New 2015 2014 2013 2012 2011 2010 2009


This listing is an abstract for educational and research purposes is only meant as a recent sample of applications filed, not a comprehensive history. is not affiliated or associated with International Rectifier Corporation in any way and there may be associated servicemarks. This data is also published to the public by the USPTO and available for free on their website. Note that there may be alternative spellings for International Rectifier Corporation with additional patents listed. Browse our Agent directory for other possible listings. Page by