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International Rectifier Corporation
International Rectifier Corporation el Segundo Ca
International Rectifier Corporation_20100107

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International Rectifier Corporation patents


      
Recent patent applications related to International Rectifier Corporation. International Rectifier Corporation is listed as an Agent/Assignee. Note: International Rectifier Corporation may have other listings under different names/spellings. We're not affiliated with International Rectifier Corporation, we're just tracking patents.

ARCHIVE: New 2014 2013 2012 2011 2010 2009 | Company Directory "I" | International Rectifier Corporation-related inventors



International Rectifier

Combined sense signal generation and detection

International Rectifier

Single layer touch sensor

Search recent Press Releases: International Rectifier Corporation-related press releases
Count Application # Date International Rectifier Corporation patents (updated weekly) - BOOKMARK this page
12014021009207/31/14 new patent  Refractory metal nitride capped contact
22014021051907/31/14 new patent  Combined sense signal generation and detection
32014021076807/31/14 new patent  Single layer touch sensor
42014021304607/31/14 new patent  Fabrication of iii-nitride layers
52014020329407/24/14Gallium nitride devices
62014020329507/24/14Integrated power device with iii-nitride half bridges
72014020341907/24/14Half-bridge package with a conductive clip
82014019746107/17/14Semiconductor structure including a spatially confined dielectric region
92014019746207/17/14Iii-nitride transistor with high resistivity substrate
102014019133707/10/14Stacked half-bridge package
112014019244107/10/14Dc/dc converter with iii-nitride switches
122014017563006/26/14Semiconductor package with multiple conductive clips
132014016711206/19/14Cascode circuit integration of group iii-n and group iv devices
142014016715206/19/14Reduced gate charge trench field-effect transistor
152014016715306/19/14Trench fet having merged gate dielectric
162014016905206/19/14Iii-nitride power conversion circuit
172014015911606/12/14Iii-nitride device having an enhanced field plate
182014014799805/29/14Ion implantation at high temperature surface equilibrium conditions
192014013165905/15/14Gallium nitride devices with aluminum nitride intermediate layer
202014013170905/15/14Semiconductor package with temperature sensor
212014013176705/15/14Dual compartment semiconductor package
222014013165905/15/14Gallium nitride devices with aluminum nitride intermediate layer
232014013170905/15/14Semiconductor package with temperature sensor
242014013176705/15/14Dual compartment semiconductor package
252014012489005/08/14Semiconductor package having multi-phase power inverter with internal temperature sensor
262014012625605/08/14Semiconductor package having an over-temperature protection circuit utilizing multiple temperature threshold values
272014012786105/08/14Semiconductor packages utilizing leadframe panels with grooves in connecting bars
282014012489005/08/14Semiconductor package having multi-phase power inverter with internal temperature sensor
292014012625605/08/14Semiconductor package having an over-temperature protection circuit utilizing multiple temperature threshold values
302014012786105/08/14Semiconductor packages utilizing leadframe panels with grooves in connecting bars
312014011751705/01/14Power quad flat no-lead (pqfn) package having control and driver circuits
322014011751805/01/14Control and driver circuits on a power quad flat no-lead (pqfn) leadframe
332014011803205/01/14Buck converter power package
342014011751705/01/14Power quad flat no-lead (pqfn) package having control and driver circuits
352014011751805/01/14Control and driver circuits on a power quad flat no-lead (pqfn) leadframe
362014011803205/01/14Buck converter power package
372014011077604/24/14Semiconductor package including conductive carrier coupled power switches
382014011078804/24/14Power converter package including top-drain configured power fet
392014011079604/24/14Semiconductor package with conductive carrier integrated heat spreader
402014011086304/24/14Power converter package including vertically stacked driver ic
412014011077604/24/14Semiconductor package including conductive carrier coupled power switches
422014011078804/24/14Power converter package including top-drain configured power fet
432014011079604/24/14Semiconductor package with conductive carrier integrated heat spreader
442014011086304/24/14Power converter package including vertically stacked driver ic
452014010339304/17/14Surface mountable power components
462014010351404/17/14Power quad flat no-lead (pqfn) package having bootstrap diodes on a common integrated circuit (ic)
472014010654804/17/14Fabrication of iii-nitride semiconductor device and related structures
482014010339304/17/14Surface mountable power components
492014010351404/17/14Power quad flat no-lead (pqfn) package having bootstrap diodes on a common integrated circuit (ic)
502014010654804/17/14Fabrication of iii-nitride semiconductor device and related structures
512014009744604/10/14Gallium nitride devices with gallium nitride alloy intermediate layer
522014009747104/10/14Active area shaping of iii-nitride devices utilizing a field plate defined by a dielectric body
532014009749804/10/14Open source power quad flat no-lead (pqfn) leadframe
542014009753104/10/14Power quad flat no-lead (pqfn) package in a single shunt inverter circuit
552014009744604/10/14Gallium nitride devices with gallium nitride alloy intermediate layer
562014009747104/10/14Active area shaping of iii-nitride devices utilizing a field plate defined by a dielectric body
572014009749804/10/14Open source power quad flat no-lead (pqfn) leadframe
582014009753104/10/14Power quad flat no-lead (pqfn) package in a single shunt inverter circuit
592014009744604/10/14Gallium nitride devices with gallium nitride alloy intermediate layer
602014009747104/10/14Active area shaping of iii-nitride devices utilizing a field plate defined by a dielectric body
612014009749804/10/14Open source power quad flat no-lead (pqfn) leadframe
622014009753104/10/14Power quad flat no-lead (pqfn) package in a single shunt inverter circuit
632014009144904/03/14Power quad flat no-lead (pqfn) semiconductor package with leadframe islands for multi-phase power inverter
642014009144904/03/14Power quad flat no-lead (pqfn) semiconductor package with leadframe islands for multi-phase power inverter
652014008443103/27/14Semiconductor package with heat spreader
662014008443103/27/14Semiconductor package with heat spreader
672014007722203/20/14Gallium nitride devices with aluminum nitride alloy intermediate layer
682014007722203/20/14Gallium nitride devices with aluminum nitride alloy intermediate layer
692014007027803/13/14Active area shaping of iii-nitride devices utilizing multiple dielectric materials
702014007027903/13/14Active area shaping of iii-nitride devices utilizing a source-side field plate and a wider drain-side field plate
712014007028003/13/14Active area shaping of iii-nitride devices utilizing steps of source-side and drain-side field plates
722014007062703/13/14Integrated group iii-v power stage
732014007078603/13/14Power converter including integrated driver providing overcurrent protection
742014007027803/13/14Active area shaping of iii-nitride devices utilizing multiple dielectric materials
752014007027903/13/14Active area shaping of iii-nitride devices utilizing a source-side field plate and a wider drain-side field plate
762014007028003/13/14Active area shaping of iii-nitride devices utilizing steps of source-side and drain-side field plates
772014007062703/13/14Integrated group iii-v power stage
782014007078603/13/14Power converter including integrated driver providing overcurrent protection
792014006188503/06/14Power quad flat no-lead (pqfn) package
802014006188503/06/14Power quad flat no-lead (pqfn) package
812014005460702/27/14Group iii-v device with strain-relieving layers
822014005510902/27/14Power converter including integrated driver for depletion mode group iii-v transistor
832014004892302/20/14Semiconductor package for high power devices
842014003495902/06/14Iii-nitride semiconductor device with stepped gate
852014003500502/06/14Monolithic integrated group iii-v and group iv device
862014003839102/06/14Iii-nitride wafer fabrication
872014002836901/30/14Level shifter utilizing bidirectional signaling through a capacitive isolation barrier
882014003085401/30/14High voltage cascoded iii-nitride rectifier package
892014003085801/30/14Enhancement mode iii-nitride device
902014000866301/09/14Integrated composite group iii-v and group iv semiconductor device
912014000161401/02/14Thermally enhanced semiconductor package
922013033457412/19/13Monolithic integrated composite group iii-v and group iv device
932013033761112/19/13Thermally enhanced semiconductor package with conductive clip
942013033762612/19/13Monolithic group iii-v and group iv device
952013031652711/28/13Multi-chip-scale package
962013029987711/14/13Integrated iii-nitride and silicon device
972013027736210/24/13Power converter with over-voltage protection
982013027771110/24/13Oscillation free fast-recovery diode
992013027818110/24/13Reverse rotation of a motor configured for operation in a forward direction
1002013027120110/17/13System on chip for power inverter
1012013026457910/10/13Iii-nitride heterojunction device
1022013026463610/10/13Trench fet with ruggedness enhancement regions
1032013026496810/10/13Power converter having an advanced control ic
1042013025674410/03/13Igbt with buried emitter electrode
1052013025674510/03/13Deep gate trench igbt
1062013025680710/03/13Integrated dual power converter package having internal driver ic
1072013025685910/03/13Dual power converter package using external driver ic
1082013025689410/03/13Porous metallic film as die attach and interconnect
1092013025690510/03/13Monolithic power converter package with through substrate vias
1102013024888409/26/13Iii-nitride power device
1112013024907209/26/13Direct contact package for power transistors
1122013024950809/26/13Voltage regulator having an emulated ripple generator
1132013024089809/19/13Group iii-v and group iv composite switch
1142013024091109/19/13Iii-nitride multi-channel heterojunction device
1152013023420809/12/13Composite semiconductor device with active oscillation prevention
1162013022879409/05/13Stacked half-bridge package with a common leadframe
1172013022912609/05/13Electronic ballast with power factor correction
1182013021428308/22/13Power transistor having segmented gate
1192013021433008/22/13Transistor having increased breakdown voltage
1202013021428308/22/13Power transistor having segmented gate
1212013021433008/22/13Transistor having increased breakdown voltage
1222013020712008/15/13Power device with solderable front metal
1232013020712008/15/13Power device with solderable front metal
1242013019649008/01/13Method and apparatus for growing a iii-nitride layer
1252013019649008/01/13Method and apparatus for growing a iii-nitride layer
1262013018247007/18/13Power module package having a multi-phase inverter and power factor correction
1272013018247007/18/13Power module package having a multi-phase inverter and power factor correction
1282013017554207/11/13Group iii-v and group iv composite diode
1292013017569007/11/13Power semiconductor device with reduced contact resistance
1302013017554207/11/13Group iii-v and group iv composite diode
1312013017569007/11/13Power semiconductor device with reduced contact resistance
1322013016180306/27/13Semiconductor package with conductive heat spreader
1332013016180306/27/13Semiconductor package with conductive heat spreader
1342013014701606/13/13Semiconductor package having internal shunt and solder stop dimples
1352013014701606/13/13Semiconductor package having internal shunt and solder stop dimples
1362013014060206/06/13Power semiconductor package with conductive clip
1372013014068406/06/13Semiconductor device assembly utilizing a dbc substrate
1382013014070106/06/13Solderable contact and passivation for semiconductor dies
1392013014339906/06/13Method for forming a reliable solderable contact
1402013014060206/06/13Power semiconductor package with conductive clip
1412013014068406/06/13Semiconductor device assembly utilizing a dbc substrate
1422013014070106/06/13Solderable contact and passivation for semiconductor dies
1432013014339906/06/13Method for forming a reliable solderable contact
1442013013443705/30/13Method for forming gallium nitride devices with conductive regions
1452013013452405/30/13Multi-transistor exposed conductive clip for semiconductor packages
1462013013443705/30/13Method for forming gallium nitride devices with conductive regions
1472013013452405/30/13Multi-transistor exposed conductive clip for semiconductor packages
1482013012689505/23/13Gallium nitride devices with vias
1492013012689505/23/13Gallium nitride devices with vias
1502013011299005/09/13Gallium nitride devices with compositionally-graded transition layer
1512013011574605/09/13Method for fabricating a vertical ldmos device
1522013011299005/09/13Gallium nitride devices with compositionally-graded transition layer
1532013011574605/09/13Method for fabricating a vertical ldmos device
1542013010581405/02/13Active area shaping for iii-nitride devices
1552013010595805/02/13Compact wirebonded power quad flat no-lead (pqfn) package
1562013010581405/02/13Active area shaping for iii-nitride devices
1572013010595805/02/13Compact wirebonded power quad flat no-lead (pqfn) package
1582013009957904/25/13System and method for providing active power balancing
1592013009335604/18/13Flyback driver for use in a flyback power converter and related method
1602013007631103/28/13System for actively managing energy banks during energy transfer and related method
1612013006920803/21/13Group iii-v device structure having a selectively reduced impurity concentration
1622013004907902/28/13Small-outline package for a power transistor
1632013004981602/28/13Power saving resonant gate driver and related method
1642013002682201/31/13Energy storage system and related method
1652013001549501/17/13Stacked half-bridge power module
1662013001549901/17/13Composite semiconductor device with a soi substrate having an integrated diode
1672013001550101/17/13Nested composite diode
1682013001590501/17/13Nested composite switch
1692013000164801/03/13Gated algan/gan schottky device
1702012031310612/13/12Enhancement mode group iii-v high electron mobility transistor (hemt) and method for fabrication
1712012031437212/13/12Power semiconductor package with double-sided cooling
1722012030607212/06/12Semiconductor wafer with reduced thickness variation and method for fabricating same
1732012029275211/22/12Thermally enhanced semiconductor package with exposed parallel conductive clip
1742012029275311/22/12Multi-transistor exposed conductive clip for high power semiconductor packages
1752012029275411/22/12Common drain exposed conductive clip for high power semiconductor packages
1762012029314711/22/12Monolithic group iii-v power converter
1772012028024511/08/12High voltage cascoded iii-nitride rectifier package with stamped leadframe
1782012028024611/08/12High voltage cascoded iii-nitride rectifier package with etched leadframe
1792012028024711/08/12High voltage cascoded iii-nitride rectifier package utilizing clips on package support surface
1802012027436611/01/12Integrated power stage
1812012027512111/01/12Power module with press-fit clamps
1822012026210010/18/12Bondwireless power module with three-dimensional current routing
1832012025618810/11/12Stacked composite device including a group iii-v transistor and a group iv lateral transistor
1842012025618910/11/12Stacked composite device including a group iii-v transistor and a group iv vertical transistor
1852012025619010/11/12Stacked composite device including a group iii-v transistor and a group iv diode
1862012024856410/04/12Dual compartment semiconductor package with temperature sensor
1872012024175609/27/12High voltage composite semiconductor device with protection for a low voltage device
1882012024181909/27/12Composite semiconductor device with turn-on prevention control
1892012024182009/27/12Iii-nitride transistor with passive oscillation prevention
1902012023520909/20/12High voltage rectifier and switching circuits
1912012022917609/13/12Integrated semiconductor device
1922012022332109/06/12Iii-nitride transistor stacked with fet in a package
1932012022332209/06/12Iii-nitride transistor stacked with diode in a package
1942012022332709/06/12Programmable gate iii-nitride semiconductor device
1952012022336509/06/12Iii-nitride semiconductor structures with strain absorbing interlayer transition modules
1962012022341509/06/12Igbt power semiconductor package having a conductive clip
1972012021182508/23/12Trench mosfet and method for fabricating same
1982012020027508/09/12Integrated high-voltage power supply start-up circuit
1992012020054708/09/12Gate driver with multiple slopes for plasma display panels
2002012019417008/02/12Load detection for switched-mode power converters
2012012018792807/26/12Synchronous buck converter including multi-mode control for light load efficiency and related method
2022012018162407/19/12Stacked half-bridge package with a common conductive clip
2032012018167407/19/12Stacked half-bridge package with a common conductive leadframe
2042012018168107/19/12Stacked half-bridge package with a current carrying layer
2052012017568807/12/12Semiconductor package with reduced on-resistance and top metal spreading resistance with application to power transistor packaging
2062012016892207/05/12High power semiconductor package with conductive clip
2072012016892307/05/12High power semiconductor package with conductive clip on multiple transistors
2082012016892407/05/12High power semiconductor package with multiple conductive clips
2092012016892507/05/12High power semiconductor package with conductive clips and flip chip driver ic
2102012016892607/05/12High power semiconductor package with conductive clip and flip chip driver ic with integrated control transistor
2112012015335106/21/12Stress modulated group iii-v semiconductor device and related method
2122012014620506/14/12Multi-chip module (mcm) power quad flat no-lead (pqfn) semiconductor package utilizing a leadframe for electrical interconnections
2132012011922305/17/12Gallium nitride semiconductor structures with compositionally-graded transition layer
2142012010458705/03/12Direct contact semiconductor package with power transistor
2152012010458605/03/12Direct contact flip chip package with power transistors
2162012009147004/19/12Programmable gate iii-nitride power transistor
2172012006819003/22/12Gallium nitride devices with electrically conductive regions
2182012007096703/22/12Method for forming gallium nitride devices with conductive regions
2192012006172503/15/12Power semiconductor package
2202012006219903/15/12Iii-nitride power converter circuit
2212012006228103/15/12Power converter with split power supply
2222012004980103/01/12Dynamic power management system and method
2232012004983303/01/12Smart photovoltaic panel and method for regulating power using same
2242012004355302/23/12Hybrid semiconductor device having a gan transistor and a silicon mosfet
2252012002571302/02/12System using shunt circuits to selectively bypass open loads
2262011031608612/29/11Wafer scale package for high power devices
2272011028486211/24/11Iii-nitride switching device with an emulated diode
2282011028486811/24/11High voltage iii-nitride transistor
2292011028486911/24/11High voltage durability iii-nitride hemt
2302011028495011/24/11Method for fabricating a shallow and narrow trench fetand related structures
2312011027871011/17/11Direct contact leadless package
2322011027871111/17/11Leadless package for high current devices
2332011027270511/10/11Interdigitated conductive support for gan semiconductor die
2342011027275911/10/11Vertical ldmos device and method for fabricating same
2352011027518311/10/11Enhancement mode iii-nitride fet
2362011026032210/27/11"semiconductor on semiconductor substrate multi-chip-scale package"
2372011026066810/27/11Low frequency drive control circuit and method for driving an inductive load
2382011024101910/06/11Iii-nitride power semiconductor device
2392011024467110/06/11Method for fabricating a iii-nitride semiconductor device
2402011022709009/22/11Programmable iii-nitride transistor with aluminum-doped gate
2412011022709209/22/11Iii-nitride semiconductor device
2422011022374609/15/11Method for fabrication of iii-nitride heterojunction semiconductor device
2432011021656309/08/11Hemt/gan half-bridge circuit
2442011021033709/01/11Monolithic integration of silicon and group iii-v devices
2452011021033809/01/11Efficient high voltage switching circuits and monolithic integration of same
2462011019861108/18/11Iii-nitride power device with solderable front metal
2472011018125207/28/11Driving circuit for depletion mode semiconductor switches
2482011017555907/21/11Motor drive based on iii-nitride devices
2492011016337307/07/11Semiconductor device including a voltage controlled termination structure and method for fabricating same


ARCHIVE: New 2014 2013 2012 2011 2010 2009



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This listing is an abstract for educational and research purposes is only meant as a recent sample of applications filed, not a comprehensive history. Freshpatents.com is not affiliated or associated with International Rectifier Corporation in any way and there may be associated servicemarks. This data is also published to the public by the USPTO and available for free on their website. Note that there may be alternative spellings for International Rectifier Corporation with additional patents listed. Browse our Agent directory for other possible listings. Page by FreshPatents.com

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