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International Rectifier Corporation
International Rectifier Corporation el Segundo Ca
International Rectifier Corporation_20100107

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International Rectifier Corporation patents


      
Recent patent applications related to International Rectifier Corporation. International Rectifier Corporation is listed as an Agent/Assignee. Note: International Rectifier Corporation may have other listings under different names/spellings. We're not affiliated with International Rectifier Corporation, we're just tracking patents.

ARCHIVE: New 2015 2014 2013 2012 2011 2010 2009 | Company Directory "I" | International Rectifier Corporation-related inventors




Count Application # Date International Rectifier Corporation patents (updated weekly) - BOOKMARK this page
12015023593208/20/15 Compact power quad flat no-lead (pqfn) package
22015022861008/13/15 Semiconductor package including a power stage and integrated output inductor
32015022158808/06/15 Surface mountable power components
42015020743207/23/15 System on chip with power switches
52015020749507/23/15 Power converter with split voltage supply
62015019436907/09/15 Semiconductor package with conductive clips
72015018788007/02/15 Semiconductor structure with compositionally-graded transition layer
82015017117206/18/15 High performance iii-nitride power device
92015016226106/11/15 Power semiconductor package with integrated heat spreader and partially etched conductive carrier
102015016229706/11/15 Power converter package with an integrated output inductor
112015016230306/11/15 Array based fabrication of power semiconductor package with integrated heat spreader
122015016232106/11/15 Composite power device with esd protection clamp
132015016283206/11/15 Group iii-v voltage converter with monolithically integrated level shifter, high side driver, and high side power switch
142015015527506/04/15 Enhancement mode iii-nitride switch
152015015535806/04/15 Group iii-v transistor with semiconductor field plate
162015013714105/21/15 Gallium nitride devices
172015013003605/14/15 Semiconductor package with low profile switch node integrated heat spreader
182015013293305/14/15 Iii-nitride semiconductor device fabrication
192015012363005/07/15 Voltage converter with vcc-less rdson current sensing circuit
202015011532704/30/15 Group iii-v device including a buffer termination body
212015011591104/30/15 Adaptive off time control scheme for semi-resonant and hybrid converters
222015010849504/23/15 Gallium nitride devices with discontinuously graded transition layer
232015009719604/09/15 Integrated device including silicon and iii-nitride semiconductor devices
242015007707403/19/15 Circuit and producing an average output inductor current indicator
252015005456402/26/15 Level shifter utilizing a capacitive isolation barrier
262015003512002/05/15 Wafer scale package for high power devices
272015003796502/05/15 Fabrication of iii-nitride semiconductor device and related structures
282015002161901/22/15 Iii-nitride semiconductor device with reduced electric field between gate and drain
292015001469801/15/15 Integrated iii-nitride d-mode hfet with cascoded pair half bridge
302015001470101/15/15 Iii-nitride semiconductor device with reduced electric field
312015001470301/15/15 Iii-nitride device with solderable front metal
322015001474001/15/15 Monolithic composite iii-nitride transistor with high voltage group iv enable switch
332015000844501/08/15 Iii-nitride device and fet in a package
342015000857201/08/15 Power semiconductor package with multiple dies
352015000159901/01/15 Power semiconductor package with non-contiguous, multi-section conductive carrier
362015000172201/01/15 Semiconductor device with reduced contact resistance
372014037482512/25/14 Power semiconductor device with contiguous gate trenches and offset source trenches
382014037524212/25/14 Depletion mode group iii-v transistor with high voltage group iv enable switch
392014036774412/18/14 Monolithic integrated composite group iii-v and group iv semiconductor device and ic
402014035368012/04/14 Gallium nitride semiconductor structures with compositionally-graded transition layer
412014035372312/04/14 High voltage durability iii-nitride device
422014033965111/20/14 Semiconductor device with a field plate double trench having a thick bottom dielectric
432014033966911/20/14 Semiconductor device with a field plate trench having a thick bottom dielectric
442014033967011/20/14 Semiconductor device with a thick bottom field plate trench having a single dielectric and angled sidewalls
452014033968611/20/14 Group iii-v device with a selectively modified impurity concentration
462014033287911/13/14 Power semiconductor device with reduced on-resistance and increased breakdown voltage
472014031966510/30/14 Power semiconductor package
482014026437309/18/14 Iii-nitride heterojunction device
492014025237509/11/14 Delamination and crack prevention in iii-nitride wafers
502014025321709/11/14 Rf switch gate control
512014023934908/28/14 Drain pad having a reduced termination electric field
522014022440908/14/14 Sintering utilizing non-mechanical pressure
532014022516208/14/14 Integrated half-bridge circuit with low side and high side composite switches
542014022516308/14/14 Inverter circuit including short circuit protected composite switch
552014021009207/31/14 Refractory metal nitride capped contact
562014021051907/31/14 Combined sense signal generation and detection
572014021076807/31/14 Single layer touch sensor
582014021304607/31/14 Fabrication of iii-nitride layers
592014020329407/24/14 Gallium nitride devices
602014020329507/24/14 Integrated power device with iii-nitride half bridges
612014020341907/24/14 Half-bridge package with a conductive clip
622014019746107/17/14 Semiconductor structure including a spatially confined dielectric region
632014019746207/17/14 Iii-nitride transistor with high resistivity substrate
642014019133707/10/14 Stacked half-bridge package
652014019244107/10/14 Dc/dc converter with iii-nitride switches
662014017563006/26/14 Semiconductor package with multiple conductive clips
672014016711206/19/14 Cascode circuit integration of group iii-n and group iv devices
682014016715206/19/14 Reduced gate charge trench field-effect transistor
692014016715306/19/14 Trench fet having merged gate dielectric
702014016905206/19/14 Iii-nitride power conversion circuit
712014015911606/12/14 Iii-nitride device having an enhanced field plate
722014014799805/29/14 Ion implantation at high temperature surface equilibrium conditions
732014013165905/15/14 Gallium nitride devices with aluminum nitride intermediate layer
742014013170905/15/14 Semiconductor package with temperature sensor
752014013176705/15/14 Dual compartment semiconductor package
762014012489005/08/14 Semiconductor package having multi-phase power inverter with internal temperature sensor
772014012625605/08/14 Semiconductor package having an over-temperature protection circuit utilizing multiple temperature threshold values
782014012786105/08/14 Semiconductor packages utilizing leadframe panels with grooves in connecting bars
792014011751705/01/14 Power quad flat no-lead (pqfn) package having control and driver circuits
802014011751805/01/14 Control and driver circuits on a power quad flat no-lead (pqfn) leadframe
812014011803205/01/14 Buck converter power package
822014011077604/24/14 Semiconductor package including conductive carrier coupled power switches
832014011078804/24/14 Power converter package including top-drain configured power fet
842014011079604/24/14 Semiconductor package with conductive carrier integrated heat spreader
852014011086304/24/14 Power converter package including vertically stacked driver ic
862014010339304/17/14 Surface mountable power components
872014010351404/17/14 Power quad flat no-lead (pqfn) package having bootstrap diodes on a common integrated circuit (ic)
882014010654804/17/14 Fabrication of iii-nitride semiconductor device and related structures
892014009744604/10/14 Gallium nitride devices with gallium nitride alloy intermediate layer
902014009747104/10/14 Active area shaping of iii-nitride devices utilizing a field plate defined by a dielectric body
912014009749804/10/14 Open source power quad flat no-lead (pqfn) leadframe
922014009753104/10/14 Power quad flat no-lead (pqfn) package in a single shunt inverter circuit
932014009144904/03/14 Power quad flat no-lead (pqfn) semiconductor package with leadframe islands for multi-phase power inverter
942014008443103/27/14 Semiconductor package with heat spreader
952014007722203/20/14 Gallium nitride devices with aluminum nitride alloy intermediate layer
962014007027803/13/14 Active area shaping of iii-nitride devices utilizing multiple dielectric materials
972014007027903/13/14 Active area shaping of iii-nitride devices utilizing a source-side field plate and a wider drain-side field plate
982014007028003/13/14 Active area shaping of iii-nitride devices utilizing steps of source-side and drain-side field plates
992014007062703/13/14 Integrated group iii-v power stage
1002014007078603/13/14 Power converter including integrated driver providing overcurrent protection
1012014006188503/06/14 Power quad flat no-lead (pqfn) package
1022014005460702/27/14 Group iii-v device with strain-relieving layers
1032014005510902/27/14 Power converter including integrated driver for depletion mode group iii-v transistor
1042014004892302/20/14 Semiconductor package for high power devices
1052014003495902/06/14 Iii-nitride semiconductor device with stepped gate
1062014003500502/06/14 Monolithic integrated group iii-v and group iv device
1072014003839102/06/14 Iii-nitride wafer fabrication
1082014002836901/30/14 Level shifter utilizing bidirectional signaling through a capacitive isolation barrier
1092014003085401/30/14 High voltage cascoded iii-nitride rectifier package
1102014003085801/30/14 Enhancement mode iii-nitride device
1112014000866301/09/14 Integrated composite group iii-v and group iv semiconductor device
1122014000161401/02/14 Thermally enhanced semiconductor package
1132013033457412/19/13 Monolithic integrated composite group iii-v and group iv device
1142013033761112/19/13 Thermally enhanced semiconductor package with conductive clip
1152013033762612/19/13 Monolithic group iii-v and group iv device
1162013031652711/28/13 Multi-chip-scale package
1172013029987711/14/13 Integrated iii-nitride and silicon device
1182013027736210/24/13 Power converter with over-voltage protection
1192013027771110/24/13 Oscillation free fast-recovery diode
1202013027818110/24/13 Reverse rotation of a motor configured for operation in a forward direction
1212013027120110/17/13 System on chip for power inverter
1222013026457910/10/13 Iii-nitride heterojunction device
1232013026463610/10/13 Trench fet with ruggedness enhancement regions
1242013026496810/10/13 Power converter having an advanced control ic
1252013025674410/03/13 Igbt with buried emitter electrode
1262013025674510/03/13 Deep gate trench igbt
1272013025680710/03/13 Integrated dual power converter package having internal driver ic
1282013025685910/03/13 Dual power converter package using external driver ic
1292013025689410/03/13 Porous metallic film as die attach and interconnect
1302013025690510/03/13 Monolithic power converter package with through substrate vias
1312013024888409/26/13 Iii-nitride power device
1322013024907209/26/13 Direct contact package for power transistors
1332013024950809/26/13 Voltage regulator having an emulated ripple generator
1342013024089809/19/13 Group iii-v and group iv composite switch
1352013024091109/19/13 Iii-nitride multi-channel heterojunction device
1362013023420809/12/13 Composite semiconductor device with active oscillation prevention
1372013022879409/05/13 Stacked half-bridge package with a common leadframe
1382013022912609/05/13 Electronic ballast with power factor correction
1392013021428308/22/13 Power transistor having segmented gate
1402013021433008/22/13 Transistor having increased breakdown voltage
1412013020712008/15/13 Power device with solderable front metal
1422013019649008/01/13 Method and growing a iii-nitride layer
1432013018247007/18/13 Power module package having a multi-phase inverter and power factor correction
1442013017554207/11/13 Group iii-v and group iv composite diode
1452013017569007/11/13 Power semiconductor device with reduced contact resistance
1462013016180306/27/13 Semiconductor package with conductive heat spreader
1472013014701606/13/13 Semiconductor package having internal shunt and solder stop dimples
1482013014060206/06/13 Power semiconductor package with conductive clip
1492013014068406/06/13 Semiconductor device assembly utilizing a dbc substrate
1502013014070106/06/13 Solderable contact and passivation for semiconductor dies
1512013014339906/06/13 Method for forming a reliable solderable contact
1522013013443705/30/13 Method for forming gallium nitride devices with conductive regions
1532013013452405/30/13 Multi-transistor exposed conductive clip for semiconductor packages
1542013012689505/23/13 Gallium nitride devices with vias
1552013011299005/09/13 Gallium nitride devices with compositionally-graded transition layer
1562013011574605/09/13 Method for fabricating a vertical ldmos device
1572013010581405/02/13 Active area shaping for iii-nitride devices
1582013010595805/02/13 Compact wirebonded power quad flat no-lead (pqfn) package
1592013009957904/25/13 System and providing active power balancing
1602013009335604/18/13 Flyback driver for use in a flyback power converter and related method
1612013007631103/28/13 System for actively managing energy banks during energy transfer and related method
1622013006920803/21/13 Group iii-v device structure having a selectively reduced impurity concentration
1632013004907902/28/13 Small-outline package for a power transistor
1642013004981602/28/13 Power saving resonant gate driver and related method
1652013002682201/31/13 Energy storage system and related method
1662013001549501/17/13 Stacked half-bridge power module
1672013001549901/17/13 Composite semiconductor device with a soi substrate having an integrated diode
1682013001550101/17/13 Nested composite diode
1692013001590501/17/13 Nested composite switch
1702013000164801/03/13 Gated algan/gan schottky device
1712012031310612/13/12 Enhancement mode group iii-v high electron mobility transistor (hemt) and fabrication
1722012031437212/13/12 Power semiconductor package with double-sided cooling
1732012030607212/06/12 Semiconductor wafer with reduced thickness variation and fabricating same
1742012029275211/22/12 Thermally enhanced semiconductor package with exposed parallel conductive clip
1752012029275311/22/12 Multi-transistor exposed conductive clip for high power semiconductor packages
1762012029275411/22/12 Common drain exposed conductive clip for high power semiconductor packages
1772012029314711/22/12 Monolithic group iii-v power converter
1782012028024511/08/12 High voltage cascoded iii-nitride rectifier package with stamped leadframe
1792012028024611/08/12 High voltage cascoded iii-nitride rectifier package with etched leadframe
1802012028024711/08/12 High voltage cascoded iii-nitride rectifier package utilizing clips on package support surface
1812012027436611/01/12 Integrated power stage
1822012027512111/01/12 Power module with press-fit clamps
1832012026210010/18/12 Bondwireless power module with three-dimensional current routing
1842012025618810/11/12 Stacked composite device including a group iii-v transistor and a group iv lateral transistor
1852012025618910/11/12 Stacked composite device including a group iii-v transistor and a group iv vertical transistor
1862012025619010/11/12 Stacked composite device including a group iii-v transistor and a group iv diode
1872012024856410/04/12 Dual compartment semiconductor package with temperature sensor
1882012024175609/27/12 High voltage composite semiconductor device with protection for a low voltage device
1892012024181909/27/12 Composite semiconductor device with turn-on prevention control
1902012024182009/27/12 Iii-nitride transistor with passive oscillation prevention
1912012023520909/20/12 High voltage rectifier and switching circuits
1922012022917609/13/12 Integrated semiconductor device
1932012022332109/06/12 Iii-nitride transistor stacked with fet in a package
1942012022332209/06/12 Iii-nitride transistor stacked with diode in a package
1952012022332709/06/12 Programmable gate iii-nitride semiconductor device
1962012022336509/06/12 Iii-nitride semiconductor structures with strain absorbing interlayer transition modules
1972012022341509/06/12 Igbt power semiconductor package having a conductive clip
1982012021182508/23/12 Trench mosfet and fabricating same
1992012020027508/09/12 Integrated high-voltage power supply start-up circuit
2002012020054708/09/12 Gate driver with multiple slopes for plasma display panels
2012012019417008/02/12 Load detection for switched-mode power converters
2022012018792807/26/12 Synchronous buck converter including multi-mode control for light load efficiency and related method
2032012018162407/19/12 Stacked half-bridge package with a common conductive clip
2042012018167407/19/12 Stacked half-bridge package with a common conductive leadframe
2052012018168107/19/12 Stacked half-bridge package with a current carrying layer
2062012017568807/12/12 Semiconductor package with reduced on-resistance and top metal spreading resistance with application to power transistor packaging
2072012016892207/05/12 High power semiconductor package with conductive clip
2082012016892307/05/12 High power semiconductor package with conductive clip on multiple transistors
2092012016892407/05/12 High power semiconductor package with multiple conductive clips
2102012016892507/05/12 High power semiconductor package with conductive clips and flip chip driver ic
2112012016892607/05/12 High power semiconductor package with conductive clip and flip chip driver ic with integrated control transistor
2122012015335106/21/12 Stress modulated group iii-v semiconductor device and related method
2132012014620506/14/12 Multi-chip module (mcm) power quad flat no-lead (pqfn) semiconductor package utilizing a leadframe for electrical interconnections
2142012011922305/17/12 Gallium nitride semiconductor structures with compositionally-graded transition layer
2152012010458705/03/12 Direct contact semiconductor package with power transistor
2162012010458605/03/12 Direct contact flip chip package with power transistors
2172012009147004/19/12 Programmable gate iii-nitride power transistor
2182012006819003/22/12 Gallium nitride devices with electrically conductive regions
2192012007096703/22/12 Method for forming gallium nitride devices with conductive regions
2202012006172503/15/12 Power semiconductor package
2212012006219903/15/12 Iii-nitride power converter circuit
2222012006228103/15/12 Power converter with split power supply
2232012004980103/01/12 Dynamic power management system and method
2242012004983303/01/12 Smart photovoltaic panel and regulating power using same
2252012004355302/23/12 Hybrid semiconductor device having a gan transistor and a silicon mosfet
2262012002571302/02/12 System using shunt circuits to selectively bypass open loads
2272011031608612/29/11 Wafer scale package for high power devices
2282011028486211/24/11 Iii-nitride switching device with an emulated diode
2292011028486811/24/11 High voltage iii-nitride transistor
2302011028486911/24/11 High voltage durability iii-nitride hemt
2312011028495011/24/11 Method for fabricating a shallow and narrow trench fetand related structures
2322011027871011/17/11 Direct contact leadless package
2332011027871111/17/11 Leadless package for high current devices
2342011027270511/10/11 Interdigitated conductive support for gan semiconductor die
2352011027275911/10/11 Vertical ldmos device and fabricating same
2362011027518311/10/11 Enhancement mode iii-nitride fet
2372011026032210/27/11 "semiconductor on semiconductor substrate multi-chip-scale package"
2382011026066810/27/11 Low frequency drive control circuit and driving an inductive load
2392011024101910/06/11 Iii-nitride power semiconductor device
2402011024467110/06/11 Method for fabricating a iii-nitride semiconductor device
2412011022709009/22/11 Programmable iii-nitride transistor with aluminum-doped gate
2422011022709209/22/11 Iii-nitride semiconductor device
2432011022374609/15/11 Method for fabrication of iii-nitride heterojunction semiconductor device
2442011021656309/08/11 Hemt/gan half-bridge circuit
2452011021033709/01/11 Monolithic integration of silicon and group iii-v devices
2462011021033809/01/11 Efficient high voltage switching circuits and monolithic integration of same
2472011019861108/18/11 Iii-nitride power device with solderable front metal
2482011018125207/28/11 Driving circuit for depletion mode semiconductor switches
2492011017555907/21/11 Motor drive based on iii-nitride devices



ARCHIVE: New 2015 2014 2013 2012 2011 2010 2009



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