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Filing Names

International Rectifier Corporation
International Rectifier Corporation el Segundo Ca
International Rectifier Corporation_20100107


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International Rectifier Corporation patents

Recent patent applications related to International Rectifier Corporation. International Rectifier Corporation is listed as an Agent/Assignee. Note: International Rectifier Corporation may have other listings under different names/spellings. We're not affiliated with International Rectifier Corporation, we're just tracking patents.

ARCHIVE: New 2016 2015 2014 2013 2012 2011 2010 2009 | Company Directory "I" | International Rectifier Corporation-related inventors

Count Application # Date International Rectifier Corporation patents (updated weekly) - BOOKMARK this page
12016015403706/02/16 Circuit connectivity and conveyance of power status information
22016011135504/21/16 Compact single-die power semiconductor package
32016011135604/21/16 Compact multi-die power semiconductor package
42016010466504/14/16 Power converter package with integrated output inductor
52016010468804/14/16 Robust and reliable power semiconductor package
62016010469704/14/16 Compact high-voltage semiconductor package
72016010476604/14/16 Power semiconductor device with source trench and termination trench implants
82016010477304/14/16 Semiconductor structure having integrated snubber resistance and related method
92016010598304/14/16 Insertable power unit with mounting contacts for plugging into a mother board
102016010598404/14/16 Power unit with conductive slats
112016008742203/24/16 Fault and short-circuit protected output driver
122016006515603/03/16 Methods and circuitry to provide common mode transient immunity
132016006518703/03/16 Multi-level pulse generator circuitry
142016003632602/04/16 Power supply control and current emulation
152016002027901/21/16 Edge termination using guard rings between recessed field oxide regions
162016002030801/21/16 Edge termination structure having a termination charge region below a recessed field oxide region
172016002069301/21/16 Power converter utilizing a resonant half-bridge and charge pump circuit
182016001316801/14/16 Semiconductor package with integrated semiconductor devices and passive component
192016001316901/14/16 Passive component integrated with semiconductor device in semiconductor package
202016000581601/07/16 Group iii-v transistor with voltage controlled substrate
212016000582101/07/16 Group iii-v lateral transistor with backside contact
222016000584501/07/16 Group iii-v transistor utilizing a substrate having a dielectrically-filled region
232015038049712/31/15 Group iii-v device with a selectively modified impurity concentration
242015038051812/31/15 Fabrication of iii-nitride power device with reduced gate to drain charge
252015037198212/24/15 Composite group iii-v and group iv transistor having a switched substrate
262015037198612/24/15 Group iii-v hemt having a selectably floating substrate
272015037198712/24/15 Group iii-v hemt having a diode controlled substrate
282015035718212/10/15 Fabrication of iii-nitride power semiconductor device
292015035745812/10/15 Iii-nitride device with improved transconductance
302015034888412/03/15 Power semiconductor package with multi-section conductive carrier
312015034888712/03/15 Method for fabricating a semiconductor package with conductive carrier integrated heat spreader
322015034888812/03/15 Semiconductor package with integrated heat spreader
332015034030411/26/15 Power semiconductor package
342015034048311/26/15 Group iii-v device including a shield plate
352015033298811/19/15 Semiconductor package with multiple dies
362015033316511/19/15 Enhancement mode iii-nitride transistor
372015032556611/12/15 Composite device with integrated diode
382015032568511/12/15 Power semiconductor device with low rdson and high breakdown voltage
392015031114510/29/15 Semiconductor package with switch node integrated heat spreader
402015029505410/15/15 Transistor with elevated drain termination
412015028779210/08/15 Iii-nitride based semiconductor structure
422015027982110/01/15 Power semiconductor package with a common conductive clip
432015027994610/01/15 Power semiconductor device with embedded field electrodes
442015027020209/24/15 Semiconductor package with integrated die paddles for power stage
452015027024909/24/15 Semiconductor package with via-coupled power transistors
462015026296009/17/15 Power semiconductor package with conductive clips
472015025537609/10/15 Power semiconductor package
482015025538209/10/15 Semiconductor package with conductive clip
492015025538409/10/15 Electrical connectivity of die to a host substrate
502015023593208/20/15 Compact power quad flat no-lead (pqfn) package
512015022861008/13/15 Semiconductor package including a power stage and integrated output inductor
522015022158808/06/15 Surface mountable power components
532015020743207/23/15 System on chip with power switches
542015020749507/23/15 Power converter with split voltage supply
552015019436907/09/15 Semiconductor package with conductive clips
562015018788007/02/15 Semiconductor structure with compositionally-graded transition layer
572015017117206/18/15 High performance iii-nitride power device
582015016226106/11/15 Power semiconductor package with integrated heat spreader and partially etched conductive carrier
592015016229706/11/15 Power converter package with an integrated output inductor
602015016230306/11/15 Array based fabrication of power semiconductor package with integrated heat spreader
612015016232106/11/15 Composite power device with esd protection clamp
622015016283206/11/15 Group iii-v voltage converter with monolithically integrated level shifter, high side driver, and high side power switch
632015015527506/04/15 Enhancement mode iii-nitride switch
642015015535806/04/15 Group iii-v transistor with semiconductor field plate
652015013714105/21/15 Gallium nitride devices
662015013003605/14/15 Semiconductor package with low profile switch node integrated heat spreader
672015013293305/14/15 Iii-nitride semiconductor device fabrication
682015012363005/07/15 Voltage converter with vcc-less rdson current sensing circuit
692015011532704/30/15 Group iii-v device including a buffer termination body
702015011591104/30/15 Adaptive off time control scheme for semi-resonant and hybrid converters
712015010849504/23/15 Gallium nitride devices with discontinuously graded transition layer
722015009719604/09/15 Integrated device including silicon and iii-nitride semiconductor devices
732015007707403/19/15 Circuit and producing an average output inductor current indicator
742015005456402/26/15 Level shifter utilizing a capacitive isolation barrier
752015003512002/05/15 Wafer scale package for high power devices
762015003796502/05/15 Fabrication of iii-nitride semiconductor device and related structures
772015002161901/22/15 Iii-nitride semiconductor device with reduced electric field between gate and drain
782015001469801/15/15 Integrated iii-nitride d-mode hfet with cascoded pair half bridge
792015001470101/15/15 Iii-nitride semiconductor device with reduced electric field
802015001470301/15/15 Iii-nitride device with solderable front metal
812015001474001/15/15 Monolithic composite iii-nitride transistor with high voltage group iv enable switch
822015000844501/08/15 Iii-nitride device and fet in a package
832015000857201/08/15 Power semiconductor package with multiple dies
842015000159901/01/15 Power semiconductor package with non-contiguous, multi-section conductive carrier
852015000172201/01/15 Semiconductor device with reduced contact resistance
862014037482512/25/14 Power semiconductor device with contiguous gate trenches and offset source trenches
872014037524212/25/14 Depletion mode group iii-v transistor with high voltage group iv enable switch
882014036774412/18/14 Monolithic integrated composite group iii-v and group iv semiconductor device and ic
892014035368012/04/14 Gallium nitride semiconductor structures with compositionally-graded transition layer
902014035372312/04/14 High voltage durability iii-nitride device
912014033965111/20/14 Semiconductor device with a field plate double trench having a thick bottom dielectric
922014033966911/20/14 Semiconductor device with a field plate trench having a thick bottom dielectric
932014033967011/20/14 Semiconductor device with a thick bottom field plate trench having a single dielectric and angled sidewalls
942014033968611/20/14 Group iii-v device with a selectively modified impurity concentration
952014033287911/13/14 Power semiconductor device with reduced on-resistance and increased breakdown voltage
962014031966510/30/14 Power semiconductor package
972014026437309/18/14 Iii-nitride heterojunction device
982014025237509/11/14 Delamination and crack prevention in iii-nitride wafers
992014025321709/11/14 Rf switch gate control
1002014023934908/28/14 Drain pad having a reduced termination electric field
1012014022440908/14/14 Sintering utilizing non-mechanical pressure
1022014022516208/14/14 Integrated half-bridge circuit with low side and high side composite switches
1032014022516308/14/14 Inverter circuit including short circuit protected composite switch
1042014021009207/31/14 Refractory metal nitride capped contact
1052014021051907/31/14 Combined sense signal generation and detection
1062014021076807/31/14 Single layer touch sensor
1072014021304607/31/14 Fabrication of iii-nitride layers
1082014020329407/24/14 Gallium nitride devices
1092014020329507/24/14 Integrated power device with iii-nitride half bridges
1102014020341907/24/14 Half-bridge package with a conductive clip
1112014019746107/17/14 Semiconductor structure including a spatially confined dielectric region
1122014019746207/17/14 Iii-nitride transistor with high resistivity substrate
1132014019133707/10/14 Stacked half-bridge package
1142014019244107/10/14 Dc/dc converter with iii-nitride switches
1152014017563006/26/14 Semiconductor package with multiple conductive clips
1162014016711206/19/14 Cascode circuit integration of group iii-n and group iv devices
1172014016715206/19/14 Reduced gate charge trench field-effect transistor
1182014016715306/19/14 Trench fet having merged gate dielectric
1192014016905206/19/14 Iii-nitride power conversion circuit
1202014015911606/12/14 Iii-nitride device having an enhanced field plate
1212014014799805/29/14 Ion implantation at high temperature surface equilibrium conditions
1222014013165905/15/14 Gallium nitride devices with aluminum nitride intermediate layer
1232014013170905/15/14 Semiconductor package with temperature sensor
1242014013176705/15/14 Dual compartment semiconductor package
1252014012489005/08/14 Semiconductor package having multi-phase power inverter with internal temperature sensor
1262014012625605/08/14 Semiconductor package having an over-temperature protection circuit utilizing multiple temperature threshold values
1272014012786105/08/14 Semiconductor packages utilizing leadframe panels with grooves in connecting bars
1282014011751705/01/14 Power quad flat no-lead (pqfn) package having control and driver circuits
1292014011751805/01/14 Control and driver circuits on a power quad flat no-lead (pqfn) leadframe
1302014011803205/01/14 Buck converter power package
1312014011077604/24/14 Semiconductor package including conductive carrier coupled power switches
1322014011078804/24/14 Power converter package including top-drain configured power fet
1332014011079604/24/14 Semiconductor package with conductive carrier integrated heat spreader
1342014011086304/24/14 Power converter package including vertically stacked driver ic
1352014010339304/17/14 Surface mountable power components
1362014010351404/17/14 Power quad flat no-lead (pqfn) package having bootstrap diodes on a common integrated circuit (ic)
1372014010654804/17/14 Fabrication of iii-nitride semiconductor device and related structures
1382014009744604/10/14 Gallium nitride devices with gallium nitride alloy intermediate layer
1392014009747104/10/14 Active area shaping of iii-nitride devices utilizing a field plate defined by a dielectric body
1402014009749804/10/14 Open source power quad flat no-lead (pqfn) leadframe
1412014009753104/10/14 Power quad flat no-lead (pqfn) package in a single shunt inverter circuit
1422014009144904/03/14 Power quad flat no-lead (pqfn) semiconductor package with leadframe islands for multi-phase power inverter
1432014008443103/27/14 Semiconductor package with heat spreader
1442014007722203/20/14 Gallium nitride devices with aluminum nitride alloy intermediate layer
1452014007027803/13/14 Active area shaping of iii-nitride devices utilizing multiple dielectric materials
1462014007027903/13/14 Active area shaping of iii-nitride devices utilizing a source-side field plate and a wider drain-side field plate
1472014007028003/13/14 Active area shaping of iii-nitride devices utilizing steps of source-side and drain-side field plates
1482014007062703/13/14 Integrated group iii-v power stage
1492014007078603/13/14 Power converter including integrated driver providing overcurrent protection
1502014006188503/06/14 Power quad flat no-lead (pqfn) package
1512014005460702/27/14 Group iii-v device with strain-relieving layers
1522014005510902/27/14 Power converter including integrated driver for depletion mode group iii-v transistor
1532014004892302/20/14 Semiconductor package for high power devices
1542014003495902/06/14 Iii-nitride semiconductor device with stepped gate
1552014003500502/06/14 Monolithic integrated group iii-v and group iv device
1562014003839102/06/14 Iii-nitride wafer fabrication
1572014002836901/30/14 Level shifter utilizing bidirectional signaling through a capacitive isolation barrier
1582014003085401/30/14 High voltage cascoded iii-nitride rectifier package
1592014003085801/30/14 Enhancement mode iii-nitride device
1602014000866301/09/14 Integrated composite group iii-v and group iv semiconductor device
1612014000161401/02/14 Thermally enhanced semiconductor package
1622013033457412/19/13 Monolithic integrated composite group iii-v and group iv device
1632013033761112/19/13 Thermally enhanced semiconductor package with conductive clip
1642013033762612/19/13 Monolithic group iii-v and group iv device
1652013031652711/28/13 Multi-chip-scale package
1662013029987711/14/13 Integrated iii-nitride and silicon device
1672013027736210/24/13 Power converter with over-voltage protection
1682013027771110/24/13 Oscillation free fast-recovery diode
1692013027818110/24/13 Reverse rotation of a motor configured for operation in a forward direction
1702013027120110/17/13 System on chip for power inverter
1712013026457910/10/13 Iii-nitride heterojunction device
1722013026463610/10/13 Trench fet with ruggedness enhancement regions
1732013026496810/10/13 Power converter having an advanced control ic
1742013025674410/03/13 Igbt with buried emitter electrode
1752013025674510/03/13 Deep gate trench igbt
1762013025680710/03/13 Integrated dual power converter package having internal driver ic
1772013025685910/03/13 Dual power converter package using external driver ic
1782013025689410/03/13 Porous metallic film as die attach and interconnect
1792013025690510/03/13 Monolithic power converter package with through substrate vias
1802013024888409/26/13 Iii-nitride power device
1812013024907209/26/13 Direct contact package for power transistors
1822013024950809/26/13 Voltage regulator having an emulated ripple generator
1832013024089809/19/13 Group iii-v and group iv composite switch
1842013024091109/19/13 Iii-nitride multi-channel heterojunction device
1852013023420809/12/13 Composite semiconductor device with active oscillation prevention
1862013022879409/05/13 Stacked half-bridge package with a common leadframe
1872013022912609/05/13 Electronic ballast with power factor correction
1882013021428308/22/13 Power transistor having segmented gate
1892013021433008/22/13 Transistor having increased breakdown voltage
1902013020712008/15/13 Power device with solderable front metal
1912013019649008/01/13 Method and growing a iii-nitride layer
1922013018247007/18/13 Power module package having a multi-phase inverter and power factor correction
1932013017554207/11/13 Group iii-v and group iv composite diode
1942013017569007/11/13 Power semiconductor device with reduced contact resistance
1952013016180306/27/13 Semiconductor package with conductive heat spreader
1962013014701606/13/13 Semiconductor package having internal shunt and solder stop dimples
1972013014060206/06/13 Power semiconductor package with conductive clip
1982013014068406/06/13 Semiconductor device assembly utilizing a dbc substrate
1992013014070106/06/13 Solderable contact and passivation for semiconductor dies
2002013014339906/06/13 Method for forming a reliable solderable contact
2012013013443705/30/13 Method for forming gallium nitride devices with conductive regions
2022013013452405/30/13 Multi-transistor exposed conductive clip for semiconductor packages
2032013012689505/23/13 Gallium nitride devices with vias
2042013011299005/09/13 Gallium nitride devices with compositionally-graded transition layer
2052013011574605/09/13 Method for fabricating a vertical ldmos device
2062013010581405/02/13 Active area shaping for iii-nitride devices
2072013010595805/02/13 Compact wirebonded power quad flat no-lead (pqfn) package
2082013009957904/25/13 System and providing active power balancing
2092013009335604/18/13 Flyback driver for use in a flyback power converter and related method
2102013007631103/28/13 System for actively managing energy banks during energy transfer and related method
2112013006920803/21/13 Group iii-v device structure having a selectively reduced impurity concentration
2122013004907902/28/13 Small-outline package for a power transistor
2132013004981602/28/13 Power saving resonant gate driver and related method
2142013002682201/31/13 Energy storage system and related method
2152013001549501/17/13 Stacked half-bridge power module
2162013001549901/17/13 Composite semiconductor device with a soi substrate having an integrated diode
2172013001550101/17/13 Nested composite diode
2182013001590501/17/13 Nested composite switch
2192013000164801/03/13 Gated algan/gan schottky device
2202012031310612/13/12 Enhancement mode group iii-v high electron mobility transistor (hemt) and fabrication
2212012031437212/13/12 Power semiconductor package with double-sided cooling
2222012030607212/06/12 Semiconductor wafer with reduced thickness variation and fabricating same
2232012029275211/22/12 Thermally enhanced semiconductor package with exposed parallel conductive clip
2242012029275311/22/12 Multi-transistor exposed conductive clip for high power semiconductor packages
2252012029275411/22/12 Common drain exposed conductive clip for high power semiconductor packages
2262012029314711/22/12 Monolithic group iii-v power converter
2272012028024511/08/12 High voltage cascoded iii-nitride rectifier package with stamped leadframe
2282012028024611/08/12 High voltage cascoded iii-nitride rectifier package with etched leadframe
2292012028024711/08/12 High voltage cascoded iii-nitride rectifier package utilizing clips on package support surface
2302012027436611/01/12 Integrated power stage
2312012027512111/01/12 Power module with press-fit clamps
2322012026210010/18/12 Bondwireless power module with three-dimensional current routing
2332012025618810/11/12 Stacked composite device including a group iii-v transistor and a group iv lateral transistor
2342012025618910/11/12 Stacked composite device including a group iii-v transistor and a group iv vertical transistor
2352012025619010/11/12 Stacked composite device including a group iii-v transistor and a group iv diode
2362012024856410/04/12 Dual compartment semiconductor package with temperature sensor
2372012024175609/27/12 High voltage composite semiconductor device with protection for a low voltage device
2382012024181909/27/12 Composite semiconductor device with turn-on prevention control
2392012024182009/27/12 Iii-nitride transistor with passive oscillation prevention
2402012023520909/20/12 High voltage rectifier and switching circuits
2412012022917609/13/12 Integrated semiconductor device
2422012022332109/06/12 Iii-nitride transistor stacked with fet in a package
2432012022332209/06/12 Iii-nitride transistor stacked with diode in a package
2442012022332709/06/12 Programmable gate iii-nitride semiconductor device
2452012022336509/06/12 Iii-nitride semiconductor structures with strain absorbing interlayer transition modules
2462012022341509/06/12 Igbt power semiconductor package having a conductive clip
2472012021182508/23/12 Trench mosfet and fabricating same
2482012020027508/09/12 Integrated high-voltage power supply start-up circuit
2492012020054708/09/12 Gate driver with multiple slopes for plasma display panels

ARCHIVE: New 2016 2015 2014 2013 2012 2011 2010 2009


This listing is an abstract for educational and research purposes is only meant as a recent sample of applications filed, not a comprehensive history. is not affiliated or associated with International Rectifier Corporation in any way and there may be associated servicemarks. This data is also published to the public by the USPTO and available for free on their website. Note that there may be alternative spellings for International Rectifier Corporation with additional patents listed. Browse our Agent directory for other possible listings. Page by