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International Rectifier Corporation
International Rectifier Corporation el Segundo Ca
International Rectifier Corporation_20100107

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International Rectifier Corporation patents


      
Recent patent applications related to International Rectifier Corporation. International Rectifier Corporation is listed as an Agent/Assignee. Note: International Rectifier Corporation may have other listings under different names/spellings. We're not affiliated with International Rectifier Corporation, we're just tracking patents.

ARCHIVE: New 2016 2015 2014 2013 2012 2011 2010 2009 | Company Directory "I" | International Rectifier Corporation-related inventors




Count Application # Date International Rectifier Corporation patents (updated weekly) - BOOKMARK this page
12016011135504/21/16 Compact single-die power semiconductor package
22016011135604/21/16 Compact multi-die power semiconductor package
32016010466504/14/16 Power converter package with integrated output inductor
42016010468804/14/16 Robust and reliable power semiconductor package
52016010469704/14/16 Compact high-voltage semiconductor package
62016010476604/14/16 Power semiconductor device with source trench and termination trench implants
72016010477304/14/16 Semiconductor structure having integrated snubber resistance and related method
82016010598304/14/16 Insertable power unit with mounting contacts for plugging into a mother board
92016010598404/14/16 Power unit with conductive slats
102016008742203/24/16 Fault and short-circuit protected output driver
112016006515603/03/16 Methods and circuitry to provide common mode transient immunity
122016006518703/03/16 Multi-level pulse generator circuitry
132016003632602/04/16 Power supply control and current emulation
142016002027901/21/16 Edge termination using guard rings between recessed field oxide regions
152016002030801/21/16 Edge termination structure having a termination charge region below a recessed field oxide region
162016002069301/21/16 Power converter utilizing a resonant half-bridge and charge pump circuit
172016001316801/14/16 Semiconductor package with integrated semiconductor devices and passive component
182016001316901/14/16 Passive component integrated with semiconductor device in semiconductor package
192016000581601/07/16 Group iii-v transistor with voltage controlled substrate
202016000582101/07/16 Group iii-v lateral transistor with backside contact
212016000584501/07/16 Group iii-v transistor utilizing a substrate having a dielectrically-filled region
222015038049712/31/15 Group iii-v device with a selectively modified impurity concentration
232015038051812/31/15 Fabrication of iii-nitride power device with reduced gate to drain charge
242015037198212/24/15 Composite group iii-v and group iv transistor having a switched substrate
252015037198612/24/15 Group iii-v hemt having a selectably floating substrate
262015037198712/24/15 Group iii-v hemt having a diode controlled substrate
272015035718212/10/15 Fabrication of iii-nitride power semiconductor device
282015035745812/10/15 Iii-nitride device with improved transconductance
292015034888412/03/15 Power semiconductor package with multi-section conductive carrier
302015034888712/03/15 Method for fabricating a semiconductor package with conductive carrier integrated heat spreader
312015034888812/03/15 Semiconductor package with integrated heat spreader
322015034030411/26/15 Power semiconductor package
332015034048311/26/15 Group iii-v device including a shield plate
342015033298811/19/15 Semiconductor package with multiple dies
352015033316511/19/15 Enhancement mode iii-nitride transistor
362015032556611/12/15 Composite device with integrated diode
372015032568511/12/15 Power semiconductor device with low rdson and high breakdown voltage
382015031114510/29/15 Semiconductor package with switch node integrated heat spreader
392015029505410/15/15 Transistor with elevated drain termination
402015028779210/08/15 Iii-nitride based semiconductor structure
412015027982110/01/15 Power semiconductor package with a common conductive clip
422015027994610/01/15 Power semiconductor device with embedded field electrodes
432015027020209/24/15 Semiconductor package with integrated die paddles for power stage
442015027024909/24/15 Semiconductor package with via-coupled power transistors
452015026296009/17/15 Power semiconductor package with conductive clips
462015025537609/10/15 Power semiconductor package
472015025538209/10/15 Semiconductor package with conductive clip
482015025538409/10/15 Electrical connectivity of die to a host substrate
492015023593208/20/15 Compact power quad flat no-lead (pqfn) package
502015022861008/13/15 Semiconductor package including a power stage and integrated output inductor
512015022158808/06/15 Surface mountable power components
522015020743207/23/15 System on chip with power switches
532015020749507/23/15 Power converter with split voltage supply
542015019436907/09/15 Semiconductor package with conductive clips
552015018788007/02/15 Semiconductor structure with compositionally-graded transition layer
562015017117206/18/15 High performance iii-nitride power device
572015016226106/11/15 Power semiconductor package with integrated heat spreader and partially etched conductive carrier
582015016229706/11/15 Power converter package with an integrated output inductor
592015016230306/11/15 Array based fabrication of power semiconductor package with integrated heat spreader
602015016232106/11/15 Composite power device with esd protection clamp
612015016283206/11/15 Group iii-v voltage converter with monolithically integrated level shifter, high side driver, and high side power switch
622015015527506/04/15 Enhancement mode iii-nitride switch
632015015535806/04/15 Group iii-v transistor with semiconductor field plate
642015013714105/21/15 Gallium nitride devices
652015013003605/14/15 Semiconductor package with low profile switch node integrated heat spreader
662015013293305/14/15 Iii-nitride semiconductor device fabrication
672015012363005/07/15 Voltage converter with vcc-less rdson current sensing circuit
682015011532704/30/15 Group iii-v device including a buffer termination body
692015011591104/30/15 Adaptive off time control scheme for semi-resonant and hybrid converters
702015010849504/23/15 Gallium nitride devices with discontinuously graded transition layer
712015009719604/09/15 Integrated device including silicon and iii-nitride semiconductor devices
722015007707403/19/15 Circuit and producing an average output inductor current indicator
732015005456402/26/15 Level shifter utilizing a capacitive isolation barrier
742015003512002/05/15 Wafer scale package for high power devices
752015003796502/05/15 Fabrication of iii-nitride semiconductor device and related structures
762015002161901/22/15 Iii-nitride semiconductor device with reduced electric field between gate and drain
772015001469801/15/15 Integrated iii-nitride d-mode hfet with cascoded pair half bridge
782015001470101/15/15 Iii-nitride semiconductor device with reduced electric field
792015001470301/15/15 Iii-nitride device with solderable front metal
802015001474001/15/15 Monolithic composite iii-nitride transistor with high voltage group iv enable switch
812015000844501/08/15 Iii-nitride device and fet in a package
822015000857201/08/15 Power semiconductor package with multiple dies
832015000159901/01/15 Power semiconductor package with non-contiguous, multi-section conductive carrier
842015000172201/01/15 Semiconductor device with reduced contact resistance
852014037482512/25/14 Power semiconductor device with contiguous gate trenches and offset source trenches
862014037524212/25/14 Depletion mode group iii-v transistor with high voltage group iv enable switch
872014036774412/18/14 Monolithic integrated composite group iii-v and group iv semiconductor device and ic
882014035368012/04/14 Gallium nitride semiconductor structures with compositionally-graded transition layer
892014035372312/04/14 High voltage durability iii-nitride device
902014033965111/20/14 Semiconductor device with a field plate double trench having a thick bottom dielectric
912014033966911/20/14 Semiconductor device with a field plate trench having a thick bottom dielectric
922014033967011/20/14 Semiconductor device with a thick bottom field plate trench having a single dielectric and angled sidewalls
932014033968611/20/14 Group iii-v device with a selectively modified impurity concentration
942014033287911/13/14 Power semiconductor device with reduced on-resistance and increased breakdown voltage
952014031966510/30/14 Power semiconductor package
962014026437309/18/14 Iii-nitride heterojunction device
972014025237509/11/14 Delamination and crack prevention in iii-nitride wafers
982014025321709/11/14 Rf switch gate control
992014023934908/28/14 Drain pad having a reduced termination electric field
1002014022440908/14/14 Sintering utilizing non-mechanical pressure
1012014022516208/14/14 Integrated half-bridge circuit with low side and high side composite switches
1022014022516308/14/14 Inverter circuit including short circuit protected composite switch
1032014021009207/31/14 Refractory metal nitride capped contact
1042014021051907/31/14 Combined sense signal generation and detection
1052014021076807/31/14 Single layer touch sensor
1062014021304607/31/14 Fabrication of iii-nitride layers
1072014020329407/24/14 Gallium nitride devices
1082014020329507/24/14 Integrated power device with iii-nitride half bridges
1092014020341907/24/14 Half-bridge package with a conductive clip
1102014019746107/17/14 Semiconductor structure including a spatially confined dielectric region
1112014019746207/17/14 Iii-nitride transistor with high resistivity substrate
1122014019133707/10/14 Stacked half-bridge package
1132014019244107/10/14 Dc/dc converter with iii-nitride switches
1142014017563006/26/14 Semiconductor package with multiple conductive clips
1152014016711206/19/14 Cascode circuit integration of group iii-n and group iv devices
1162014016715206/19/14 Reduced gate charge trench field-effect transistor
1172014016715306/19/14 Trench fet having merged gate dielectric
1182014016905206/19/14 Iii-nitride power conversion circuit
1192014015911606/12/14 Iii-nitride device having an enhanced field plate
1202014014799805/29/14 Ion implantation at high temperature surface equilibrium conditions
1212014013165905/15/14 Gallium nitride devices with aluminum nitride intermediate layer
1222014013170905/15/14 Semiconductor package with temperature sensor
1232014013176705/15/14 Dual compartment semiconductor package
1242014012489005/08/14 Semiconductor package having multi-phase power inverter with internal temperature sensor
1252014012625605/08/14 Semiconductor package having an over-temperature protection circuit utilizing multiple temperature threshold values
1262014012786105/08/14 Semiconductor packages utilizing leadframe panels with grooves in connecting bars
1272014011751705/01/14 Power quad flat no-lead (pqfn) package having control and driver circuits
1282014011751805/01/14 Control and driver circuits on a power quad flat no-lead (pqfn) leadframe
1292014011803205/01/14 Buck converter power package
1302014011077604/24/14 Semiconductor package including conductive carrier coupled power switches
1312014011078804/24/14 Power converter package including top-drain configured power fet
1322014011079604/24/14 Semiconductor package with conductive carrier integrated heat spreader
1332014011086304/24/14 Power converter package including vertically stacked driver ic
1342014010339304/17/14 Surface mountable power components
1352014010351404/17/14 Power quad flat no-lead (pqfn) package having bootstrap diodes on a common integrated circuit (ic)
1362014010654804/17/14 Fabrication of iii-nitride semiconductor device and related structures
1372014009744604/10/14 Gallium nitride devices with gallium nitride alloy intermediate layer
1382014009747104/10/14 Active area shaping of iii-nitride devices utilizing a field plate defined by a dielectric body
1392014009749804/10/14 Open source power quad flat no-lead (pqfn) leadframe
1402014009753104/10/14 Power quad flat no-lead (pqfn) package in a single shunt inverter circuit
1412014009144904/03/14 Power quad flat no-lead (pqfn) semiconductor package with leadframe islands for multi-phase power inverter
1422014008443103/27/14 Semiconductor package with heat spreader
1432014007722203/20/14 Gallium nitride devices with aluminum nitride alloy intermediate layer
1442014007027803/13/14 Active area shaping of iii-nitride devices utilizing multiple dielectric materials
1452014007027903/13/14 Active area shaping of iii-nitride devices utilizing a source-side field plate and a wider drain-side field plate
1462014007028003/13/14 Active area shaping of iii-nitride devices utilizing steps of source-side and drain-side field plates
1472014007062703/13/14 Integrated group iii-v power stage
1482014007078603/13/14 Power converter including integrated driver providing overcurrent protection
1492014006188503/06/14 Power quad flat no-lead (pqfn) package
1502014005460702/27/14 Group iii-v device with strain-relieving layers
1512014005510902/27/14 Power converter including integrated driver for depletion mode group iii-v transistor
1522014004892302/20/14 Semiconductor package for high power devices
1532014003495902/06/14 Iii-nitride semiconductor device with stepped gate
1542014003500502/06/14 Monolithic integrated group iii-v and group iv device
1552014003839102/06/14 Iii-nitride wafer fabrication
1562014002836901/30/14 Level shifter utilizing bidirectional signaling through a capacitive isolation barrier
1572014003085401/30/14 High voltage cascoded iii-nitride rectifier package
1582014003085801/30/14 Enhancement mode iii-nitride device
1592014000866301/09/14 Integrated composite group iii-v and group iv semiconductor device
1602014000161401/02/14 Thermally enhanced semiconductor package
1612013033457412/19/13 Monolithic integrated composite group iii-v and group iv device
1622013033761112/19/13 Thermally enhanced semiconductor package with conductive clip
1632013033762612/19/13 Monolithic group iii-v and group iv device
1642013031652711/28/13 Multi-chip-scale package
1652013029987711/14/13 Integrated iii-nitride and silicon device
1662013027736210/24/13 Power converter with over-voltage protection
1672013027771110/24/13 Oscillation free fast-recovery diode
1682013027818110/24/13 Reverse rotation of a motor configured for operation in a forward direction
1692013027120110/17/13 System on chip for power inverter
1702013026457910/10/13 Iii-nitride heterojunction device
1712013026463610/10/13 Trench fet with ruggedness enhancement regions
1722013026496810/10/13 Power converter having an advanced control ic
1732013025674410/03/13 Igbt with buried emitter electrode
1742013025674510/03/13 Deep gate trench igbt
1752013025680710/03/13 Integrated dual power converter package having internal driver ic
1762013025685910/03/13 Dual power converter package using external driver ic
1772013025689410/03/13 Porous metallic film as die attach and interconnect
1782013025690510/03/13 Monolithic power converter package with through substrate vias
1792013024888409/26/13 Iii-nitride power device
1802013024907209/26/13 Direct contact package for power transistors
1812013024950809/26/13 Voltage regulator having an emulated ripple generator
1822013024089809/19/13 Group iii-v and group iv composite switch
1832013024091109/19/13 Iii-nitride multi-channel heterojunction device
1842013023420809/12/13 Composite semiconductor device with active oscillation prevention
1852013022879409/05/13 Stacked half-bridge package with a common leadframe
1862013022912609/05/13 Electronic ballast with power factor correction
1872013021428308/22/13 Power transistor having segmented gate
1882013021433008/22/13 Transistor having increased breakdown voltage
1892013020712008/15/13 Power device with solderable front metal
1902013019649008/01/13 Method and growing a iii-nitride layer
1912013018247007/18/13 Power module package having a multi-phase inverter and power factor correction
1922013017554207/11/13 Group iii-v and group iv composite diode
1932013017569007/11/13 Power semiconductor device with reduced contact resistance
1942013016180306/27/13 Semiconductor package with conductive heat spreader
1952013014701606/13/13 Semiconductor package having internal shunt and solder stop dimples
1962013014060206/06/13 Power semiconductor package with conductive clip
1972013014068406/06/13 Semiconductor device assembly utilizing a dbc substrate
1982013014070106/06/13 Solderable contact and passivation for semiconductor dies
1992013014339906/06/13 Method for forming a reliable solderable contact
2002013013443705/30/13 Method for forming gallium nitride devices with conductive regions
2012013013452405/30/13 Multi-transistor exposed conductive clip for semiconductor packages
2022013012689505/23/13 Gallium nitride devices with vias
2032013011299005/09/13 Gallium nitride devices with compositionally-graded transition layer
2042013011574605/09/13 Method for fabricating a vertical ldmos device
2052013010581405/02/13 Active area shaping for iii-nitride devices
2062013010595805/02/13 Compact wirebonded power quad flat no-lead (pqfn) package
2072013009957904/25/13 System and providing active power balancing
2082013009335604/18/13 Flyback driver for use in a flyback power converter and related method
2092013007631103/28/13 System for actively managing energy banks during energy transfer and related method
2102013006920803/21/13 Group iii-v device structure having a selectively reduced impurity concentration
2112013004907902/28/13 Small-outline package for a power transistor
2122013004981602/28/13 Power saving resonant gate driver and related method
2132013002682201/31/13 Energy storage system and related method
2142013001549501/17/13 Stacked half-bridge power module
2152013001549901/17/13 Composite semiconductor device with a soi substrate having an integrated diode
2162013001550101/17/13 Nested composite diode
2172013001590501/17/13 Nested composite switch
2182013000164801/03/13 Gated algan/gan schottky device
2192012031310612/13/12 Enhancement mode group iii-v high electron mobility transistor (hemt) and fabrication
2202012031437212/13/12 Power semiconductor package with double-sided cooling
2212012030607212/06/12 Semiconductor wafer with reduced thickness variation and fabricating same
2222012029275211/22/12 Thermally enhanced semiconductor package with exposed parallel conductive clip
2232012029275311/22/12 Multi-transistor exposed conductive clip for high power semiconductor packages
2242012029275411/22/12 Common drain exposed conductive clip for high power semiconductor packages
2252012029314711/22/12 Monolithic group iii-v power converter
2262012028024511/08/12 High voltage cascoded iii-nitride rectifier package with stamped leadframe
2272012028024611/08/12 High voltage cascoded iii-nitride rectifier package with etched leadframe
2282012028024711/08/12 High voltage cascoded iii-nitride rectifier package utilizing clips on package support surface
2292012027436611/01/12 Integrated power stage
2302012027512111/01/12 Power module with press-fit clamps
2312012026210010/18/12 Bondwireless power module with three-dimensional current routing
2322012025618810/11/12 Stacked composite device including a group iii-v transistor and a group iv lateral transistor
2332012025618910/11/12 Stacked composite device including a group iii-v transistor and a group iv vertical transistor
2342012025619010/11/12 Stacked composite device including a group iii-v transistor and a group iv diode
2352012024856410/04/12 Dual compartment semiconductor package with temperature sensor
2362012024175609/27/12 High voltage composite semiconductor device with protection for a low voltage device
2372012024181909/27/12 Composite semiconductor device with turn-on prevention control
2382012024182009/27/12 Iii-nitride transistor with passive oscillation prevention
2392012023520909/20/12 High voltage rectifier and switching circuits
2402012022917609/13/12 Integrated semiconductor device
2412012022332109/06/12 Iii-nitride transistor stacked with fet in a package
2422012022332209/06/12 Iii-nitride transistor stacked with diode in a package
2432012022332709/06/12 Programmable gate iii-nitride semiconductor device
2442012022336509/06/12 Iii-nitride semiconductor structures with strain absorbing interlayer transition modules
2452012022341509/06/12 Igbt power semiconductor package having a conductive clip
2462012021182508/23/12 Trench mosfet and fabricating same
2472012020027508/09/12 Integrated high-voltage power supply start-up circuit
2482012020054708/09/12 Gate driver with multiple slopes for plasma display panels
2492012019417008/02/12 Load detection for switched-mode power converters



ARCHIVE: New 2016 2015 2014 2013 2012 2011 2010 2009



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