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Ixys Corporation
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Ixys Corporation patents


Recent patent applications related to Ixys Corporation. Ixys Corporation is listed as an Agent/Assignee. Note: Ixys Corporation may have other listings under different names/spellings. We're not affiliated with Ixys Corporation, we're just tracking patents.

ARCHIVE: New 2018 2017 2016 2015 2014 2013 2012 2011 2010 2009 | Company Directory "I" | Ixys Corporation-related inventors


Lead and lead frame for power package

A power device includes a semiconductor chip provided over a substrate, and a patterned lead. The patterned lead includes a raised portion located between a main portion and an end portion. At least part of the raised portion is positioned over the semiconductor chip at a larger height than both... Ixys Corporation

Power mosfet having improved manufacturability, low on-resistance and high breakdown voltage

Stripe-shaped surface transistor structures of a power MOSFET are disposed over an array of parallel-extending P type Buried Stripe-Shaped Charge Compensation Regions (BSSCCRs). The power MOSFET has two and only two epitaxial semiconductor layers, and the BSSCCRs are disposed at the interface between these layers. Looping around the area occupied... Ixys Corporation

Gate driver that drives with a sequence of gate resistances

A gate driver integrated circuit for driving a gate of an IGBT or MOSFET receives an input signal. In response to a rising edge of the input signal, the integrated circuit causes the gate to be driven in a first sequence of time periods. In each period, the gate is... Ixys Corporation

Synchronous sensing of inductor current in a buck converter control circuit

A sense resistor is placed in series with an output capacitor of a buck converter. The buck converter operates in a discontinuous mode such that there is a dead time in each switching cycle. A control circuit senses a voltage across the sense resistor and thereby generates a first signal... Ixys Corporation

Trench igbt with waved floating p-well electron injection

A trench IGBT includes a floating P well and a floating N+ well that extends down into the floating P well. A bottom surface of the floating P well has a novel waved contour so that it has thinner portions and thicker portions. When the IGBT is on, electrons flow... Ixys Corporation

High-voltage stacked transistor circuit

A High-Voltage Stacked Transistor Circuit (HVSTC) includes a stack of power transistors coupled in series between a first terminal and a second terminal. The HVSTC also has a control terminal for turning on an off the power transistors of the stack. All of the power transistors of the stack turn... Ixys Corporation

Power semiconductor device module having mechanical corner press-fit anchors

A power semiconductor device module includes a metal baseplate and a plastic housing that together form a tray. Power electronics are disposed in the tray. A plastic cap covers the tray. Electrical press-fit terminals are disposed along the periphery of the tray. Each electrical terminal has a press-fit pin portion... Ixys Corporation

Power semiconductor device module having mechanical corner press-fit anchors

A power semiconductor device module includes a metal baseplate and a plastic housing that together form a tray. Power electronics are disposed in the tray. A plastic cap covers the tray. Electrical press-fit terminals are disposed along the periphery of the tray. Each electrical terminal has a press-fit pin portion... Ixys Corporation

Gate driver that drives with a sequence of gate resistances

A gate driver integrated circuit for driving a gate of an IGBT or MOSFET receives an input signal. In response to a rising edge of the input signal, the integrated circuit causes the gate to be driven in a first sequence of time periods. In each period, the gate is... Ixys Corporation

Die stack assembly using an edge separation structure for connectivity through a die of the stack

A die stack assembly includes first and second power semiconductor device dice. The first die has a P type peripheral edge separation structure that extends from the top planar semiconductor surface of the first die all the way to the bottom planar semiconductor surface of the die, and that is... Ixys Corporation

Ac line filter and ac-to-dc rectifier module

An AC line filter module includes AC-to-DC rectification circuitry. The rectification circuitry includes four low forward voltage rectifiers coupled together as two high-side rectifiers and two low-side rectifiers, where each low forward voltage rectifier includes an NPN bipolar transistor and a parallel-connected diode. A current splitting pair of inductors splits... Ixys Corporation

Power device cassette with auxiliary emitter contact

A press pack module includes a collector module terminal, an emitter module terminal, a gate module terminal, and an auxiliary module terminal. Each IGBT cassette within the module includes a set of shims, two contact pins, and an IGBT die. The first contact pin provides part of a first electrical... Ixys Corporation

Trench separation diffusion for high voltage device

A manufacturable and economically viable edge termination structure allows a semiconductor device to withstand a very high reverse blocking voltage (for example, 8500 volts) without suffering breakdown. A P type peripheral aluminum diffusion region extends around the bottom periphery of a thick die. The peripheral aluminum diffusion region extends upward... Ixys Corporation

Discrete power transistor package having solderless dbc to leadframe attach

A packaged power transistor device includes a Direct-Bonded Copper (“DBC”) substrate. Contact pads of a first lead are attached with solderless welds to a metal layer of the DBC substrate. In a first example, the solderless welds are ultrasonic welds. In a second example, the solderless welds are laser welds.... Ixys Corporation

Multi-stage led driver with current proportional to rectified input voltage and low distortion

A system for driving a multi-stage LED with low distortion and with current proportional to rectified input voltage is disclosed. In an exemplary embodiment, an apparatus includes LED groups connected in series to form an LED string having a first node, a last node, and intermediate nodes. The apparatus also... Ixys Corporation

Reverse bipolar junction transistor integrated circuit

A Reverse Bipolar Junction Transistor (RBJT) integrated circuit comprises a bipolar transistor and a parallel-connected distributed diode, where the base region is connected neither to the collector electrode nor to the emitter electrode. The bipolar transistor has unusually high emitter-to-base and emitter-to-collector reverse breakdown voltages. In the case of a... Ixys Corporation

Low forward voltage rectifier

A rectifier includes a larger Field Effect Transistor (FET1) and a smaller FET (FET2). A sense resistor is in series with FET2's body diode between a cathode terminal and an anode terminal. If the cathode terminal voltage is greater than the voltage on the anode terminal, then body diodes of... Ixys Corporation

Super junction field effect transistor with internal floating ring

A Super Junction Field Effect Transistor (FET) device includes a charge compensation region disposed on a substrate of semiconductor material. The charge compensation region includes a set of strip-shaped P− type columns, a floating ring-shaped P− type column that surrounds the set of strip-shaped P− type columns, and a set... Ixys Corporation

Bridging dmb structure for wire bonding in a power semiconductor module

A power module includes a substrate DMB (Direct Metal Bonded). A novel bridging DMB is surface mounted to the substrate DMB along with power semiconductor device dice. The top metal layer of the bridging DMB has one or more islands to which bonding wires can connect. In one example, an... Ixys Corporation

Trench igbt with tub-shaped floating p-well and hole drains to p-body regions

A trench IGBT has a gate electrode disposed in a trench. A tub-shaped floating P-well is disposed on one side of the trench. The tub-shaped floating P-well has a central shallower portion and a peripheral deeper portion. An inner sidewall of the trench is semiconductor material of the peripheral deeper... Ixys Corporation

Chopper stabilized amplifier with synchronous switched capacitor noise filtering

A chopper stabilzed amplifier with synchronous switched capacitor noise filtering is disclosed. In an exemplary embodiment, an apparatus includes a chopper amplifier having an input that receives an input signal and an output that outputs an amplified signal. The chopper amplifier includes an input chopping circuit and an output chopping... Ixys Corporation

Igbt with waved floating p-well electron injection

An IGBT includes a floating P well, and a floating N+ well that extends down into the floating P well. A bottom surface of the floating P well has a waved contour so that it has thinner portions and thicker portions. When the device is on, electrons flow laterally from... Ixys Corporation

Igbt with waved floating p-well electron injection

An IGBT includes a floating P well and a floating N+ well that extends down into the floating P well. A bottom surface of the floating P well has a waved contour with thinner portions and thicker portions. When the device is on, electrons flow laterally from an N+ emitter... Ixys Corporation

Trench igbt with waved floating p-well electron injection

A trench IGBT includes a floating P well and a floating N+ well that extends down into the floating P well. A bottom surface of the floating P well has a novel waved contour so that it has thinner portions and thicker portions. When the IGBT is on, electrons flow... Ixys Corporation

Programmable temperature compensated voltage generator

A programmable temperature compensated voltage reference is disclosed. In an exemplary embodiment, an apparatus includes a digital-to-analog converter (DAC) that uses a reference voltage and a code to generate a DAC output voltage. The apparatus also includes a temperature compensator that uses a temperature measurement (T) and the DAC code... Ixys Corporation








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