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Lam Research Corporation patents


Recent patent applications related to Lam Research Corporation. Lam Research Corporation is listed as an Agent/Assignee. Note: Lam Research Corporation may have other listings under different names/spellings. We're not affiliated with Lam Research Corporation, we're just tracking patents.

ARCHIVE: New 2018 2017 2016 2015 2014 2013 2012 2011 2010 2009 | Company Directory "L" | Lam Research Corporation-related inventors


 new patent  Plasma light up suppression

A method for suppressing arcing in helium distribution channels of an electrostatic chuck in a plasma processing chamber, wherein the electrostatic chuck is connected to a voltage source for providing a chucking voltage and wherein the plasma processing chamber comprises a process gas source, and a plasma power source for... Lam Research Corporation

 new patent  Selective inhibition in atomic layer deposition of silicon-containing films

Methods of selectively inhibiting deposition of silicon-containing films deposited by atomic layer deposition are provided. Selective inhibition involves exposure of an adsorbed layer of a silicon-containing precursor to a hydrogen-containing inhibitor, and in some instances, prior to exposure of the adsorbed layer to a second reactant. Exposure to a hydrogen-containing... Lam Research Corporation

 new patent  Method for high modulus ald sio2 spacer

Methods and apparatuses for forming high modulus silicon oxide spacers using atomic layer deposition are provided. Methods involve depositing at high temperature, using high plasma energy, and post-treating deposited silicon oxide using ultraviolet radiation. Such silicon oxide spacers are suitable for use as masks in multiple patterning applications to prevent... Lam Research Corporation

 new patent  Self-aligned multi-patterning process flow with ald gapfill spacer mask

Methods and apparatuses for forming symmetrical spacers for self-aligned multiple patterning processes are described herein. Methods include depositing gapfill material by atomic layer deposition over a patterned substrate including core material and a target layer, planarizing substrate, and etching the core material to form symmetrical spacers. Gapfill material may be... Lam Research Corporation

 new patent  Edge ring centering method using ring dynamic alignment data

A system for determining an alignment of an edge ring on a substrate support includes a robot control module configured to control a robot to place the edge ring onto the substrate support and retrieve the edge ring from the substrate support. An alignment module is configured to determine a... Lam Research Corporation

 new patent  Method for reducing the wet etch rate of a sin film without damaging the underlying substrate

Methods and apparatuses for forming conformal, low wet etch rate silicon nitride films having low hydrogen content using atomic layer deposition are described herein. Methods involve depositing a silicon nitride film at a first temperature using a bromine-containing and/or iodine-containing silicon precursor and nitrogen by atomic layer deposition and treating... Lam Research Corporation

Ultra-low defect part process

A method for removing and preventing defects on surfaces of a component of a substrate processing chamber includes loading the component into a vacuum chamber and, with the component loaded within the vacuum chamber, baking the component at a baking temperature during a first predetermined period to remove water and... Lam Research Corporation

Coating coating interior fluid wetted surfaces of a component of a semiconductor substrate processing apparatus

A fluid handling component for a vacuum chamber of a semiconductor substrate processing apparatus is provided. The fluid handling component comprises interior fluid wetted surfaces and an atomic layer deposition (ALD) or molecular layer deposition (MLD) barrier coating on the interior fluid wetted surfaces wherein the fluid wetted surfaces which... Lam Research Corporation

Active showerhead

An active showerhead used for a plasma reactor is described. The active showerhead includes a plurality of substrate layers. The substrate layers include at least one actuator and transfer component. The actuator and transfer component is coupled to a gas line via a gas channel. The active showerhead further includes... Lam Research Corporation

Electrostatic chuck including clamp electrode assembly forming portion of faraday cage for rf delivery and associated methods

A ceramic layer is attached to a top surface of a base plate using a bond layer. The ceramic layer has a top surface configured to support a substrate. A clamp electrode assembly is positioned within an upper region of the ceramic layer. The clamp electrode assembly serves to clamp... Lam Research Corporation

Ceramic electrostatic chuck including embedded faraday cage for rf delivery and associated methods for operation, monitoring, and control

A ceramic assembly is attached to a lower support structure having a bowl shape. The ceramic assembly has a top surface configured to support a substrate. At least one clamp electrode is positioned within an upper region of the ceramic assembly. A primary radiofrequency (RF) power delivery electrode is positioned... Lam Research Corporation

Wafer positioning pedestal for semiconductor processing

An assembly used in a process chamber for depositing a film on a wafer and including a pedestal extending from a central axis. An actuator is configured for controlling movement of the pedestal. A central shaft extends between the actuator and pedestal, the central shaft configured to move the pedestal... Lam Research Corporation

Process for optimizing cobalt electrofill using sacrificial oxidants

Embodiments herein relate to methods, apparatus, and systems for electroplating metal into recessed features using a superconformal fill mechanism that provides relatively faster plating within a feature and relatively slower plating in the field region. Moreover, within the feature, plating occurs faster toward the bottom of the feature compared to... Lam Research Corporation

Carrier plate for use in plasma processing systems

A carrier plate for receiving a wafer includes a pocket defined in a middle section on a top surface of the carrier plate and has a surface diameter. The pocket defines a substrate support region. A retaining feature of the carrier plate is defined at an outer edge of the... Lam Research Corporation

Planar substrate edge contact with open volume equalization pathways and side containment

A pedestal for a substrate processing system includes a pedestal body including a substrate-facing surface. An annular band is arranged on the substrate-facing surface that is configured to support a radially outer edge of the substrate. A cavity is defined in the substrate-facing surface of the pedestal body and is... Lam Research Corporation

Systems and methods for forming low resistivity metal contacts and interconnects by reducing and removing metallic oxide

A method for depositing a metal layer on a barrier layer includes a) arranging a substrate in a processing chamber. The substrate has been exposed to at least one of air and/or oxidizing chemistry and includes a barrier layer and one or more underlying layers, wherein the barrier layer includes... Lam Research Corporation

Pin lifter assembly with small gap

A pin lifter assembly for a substrate support in a substrate processing system includes a lift pin having a shaft, an upper end, and a lower end, and an insert arranged around the lift pin. The insert defines a gap between the insert and the lift pin. A clamp assembly... Lam Research Corporation

Bromine containing silicon precursors for encapsulation layers

Methods of depositing silicon nitride encapsulation layers by atomic layer deposition over memory devices including chalcogenide material are provided herein. Methods include using iodine-containing and/or bromine-containing silicon precursors and depositing thermally using ammonia or hydrazine as a second reactant, or iodine-containing and/or bromine-containing silicon precursors and depositing using a nitrogen-based... Lam Research Corporation

Edge seal for lower electrode assembly

An edge seal for sealing an outer surface of a lower electrode assembly configured to support a semiconductor substrate in a plasma processing chamber, the lower electrode assembly including an annular groove defined between a lower member and an upper member of the lower electrode assembly. The edge seal includes... Lam Research Corporation

Integrated direct dielectric and metal deposition

Efficient integrated sequential deposition of alternating layers of dielectric and conductor, for example oxide/metal or metal nitride, e.g., SiO2/TiN, in a single tool, and even in a single process chamber enhances throughput without compromising quality when directly depositing a OMOM stack with many layers. Conductor and dielectric film deposition of... Lam Research Corporation

High aspect ratio etch

A method for etching a layer in a processing chamber is provided. A plurality of cycles is provided, where each cycle comprises a deposition phase, a clearing phase, and an etching phase. The deposition phase comprises flowing a deposition gas comprising a fluorocarbon or hydrofluorocarbon gas into the processing chamber,... Lam Research Corporation

Silicon oxide silicon nitride stack ion-assisted etch

A method for ion-assisted etching a stack of alternating silicon oxide and silicon nitride layers in an etch chamber is provided. An etch gas comprising a fluorine component, helium, and a fluorohydrocarbon or hydrocarbon is flowed into the etch chamber. The gas is formed into an in-situ plasma in the... Lam Research Corporation

Identifying components associated with a fault in a plasma system

A method for identifying a faulty component in a plasma tool is described. The method includes accessing a measurement of a parameter received from a frequency generator and measurement device. The measurement is generated based on a plurality of radio frequency (RF) signals that are provided to a portion of... Lam Research Corporation

Cobalt etch back

Methods of etching cobalt on substrates are provided. Some methods involve exposing the substrate to a boron-containing halide gas and an additive, and exposing the substrate to an activation gas and a plasma. Additives improve selectively depositing a thicker layer of a boron-containing halide material on a surface of a... Lam Research Corporation

Method for depositing ald films using halide-based precursors

A method of depositing ALD films on semiconductor substrates processed in a micro-volume of a plasma enhanced atomic layer deposition (PEALD) reaction chamber wherein a single semiconductor substrate is supported on a ceramic surface of a pedestal and process gas is introduced through gas outlets in a ceramic surface of... Lam Research Corporation

Method for selectively etching with reduced aspect ratio dependence

A method for selectively etching an etch layer with respect to a mask is provided. An etch process is provided comprising a plurality of etch cycles, wherein each etch cycle comprises providing a deposition phase and an etch phase. The deposition phase comprises providing a flow of a deposition phase... Lam Research Corporation

Method for selectively etching silicon oxide with respect to an organic mask

A method for selectively etching trenches in a silicon oxide containing layer with an organic planarization layer is provided. Processing the silicon oxide layer comprises a plurality of process cycles, wherein each etch cycle comprises a deposition phase, comprising providing a flow of a deposition phase gas comprising a fluorocarbon... Lam Research Corporation

Remote plasma based deposition of graded or multi-layered silicon carbide film

Provided are methods and apparatuses for depositing a graded or multi-layered silicon carbide film using remote plasma. A graded or multi-layered silicon carbide film can be formed under process conditions that provide one or more organosilicon precursors onto a substrate in a reaction chamber. Radicals of source gas in a... Lam Research Corporation

Composite dielectric interface layers for interconnect structures

Dielectric composite films characterized by a dielectric constant (k) of less than about 7 and having a density of at least about 2.5 g/cm3 are deposited on partially fabricated semiconductor devices to serve as etch stop layers. The composite films in one embodiment include at least two elements selected from... Lam Research Corporation

Frequency and match tuning in one state and frequency tuning in the other state

Systems and methods for frequency and match tuning in one state S1 and frequency tuning in another state S2 are described. The systems and methods include determining one or more variables for the states S1 and S2, and tuning a frequency for the state S1 of a radio frequency (RF)... Lam Research Corporation

Systems and methods for detecting oxygen in-situ in a substrate area of a substrate processing system

A measurement system to measure a concentration of neutral gas species above a substrate includes a substrate support located in a chamber to support a substrate. A plasma source generates plasma in the chamber above the substrate. The plasma generates metastable species having higher ionization energy than a neutral gas... Lam Research Corporation

Methods and systems for advanced ion control for etching processes

A substrate is disposed on a substrate holder within a process module. The substrate includes a mask material overlying a target material with at least one portion of the target material exposed through an opening in the mask material. A plasma is generated in exposure to the substrate. For a... Lam Research Corporation

Lift pin holder with spring retention for substrate processing systems

A lift pin holder assembly includes a lift pin holder including a central bore defining a first groove arranged on a radially inner surface of the central bore. The lift pin holder is made of a non-metallic material. A lift pin includes a second groove arranged on a radially outer... Lam Research Corporation

Gap fill process stability monitoring of an electroplating process using a potential-controlled exit step

Various embodiments herein relate to methods and apparatus for electroplating metal on a substrate. In many cases, an electroplating process may be monitored to ensure that it is operating within a pre-defined processing window. This monitoring may involve application of a controlled potential between the substrate and a reference electrode... Lam Research Corporation

Systems and methods for controlling directionality of ions in an edge region by using an electrode within a coupling ring

Systems and methods for controlling directionality of ion flux at an edge region within a plasma chamber are described. One of the systems includes a radio frequency (RF) generator that is configured to generate an RF signal, an impedance matching circuit coupled to the RF generator for receiving the RF... Lam Research Corporation

03/22/18 / #20180082826

Method and process of implementing machine learning in complex multivariate wafer processing equipment

Methods and systems for controlling processing state of a plasma reactor to initiate processing of production substrates and/or to determine a ready state of a reactor after the reactor has been cleaned and needs to be seasoned for subsequent production wafer processing are provided. The method initiate processing of a... Lam Research Corporation

03/22/18 / #20180082886

Temporally pulsed and kinetically modulated cvd dielectrics for gapfill applications

A method for performing temporally pulsed chemical vapor deposition (CVD) is provided, including: providing a first reactant configured to adsorb on exposed surfaces of a substrate in a self-limiting manner, the first reactant being provided at a partial pressure so that the first reactant diffuses into a gap feature of... Lam Research Corporation

03/15/18 / #20180073137

Systems and methods for reducing effluent build-up in a pumping exhaust system

A method for reducing effluent buildup in a pumping exhaust system of a substrate processing system includes, during a substrate treatment process, arranging a substrate on a substrate support in a processing chamber; supplying one or more process gases to the processing chamber; supplying an inert dilution gas at a... Lam Research Corporation

03/15/18 / #20180076028

Systems and methods for uv-based suppression of plasma instability

A substrate is positioned in exposure to a plasma generation region within a plasma processing chamber. A first plasma is generated within the plasma generation region. The first plasma is configured to cause deposition of a film on the substrate until the film deposited on the substrate reaches a threshold... Lam Research Corporation

03/15/18 / #20180076045

Methods and systems for advanced ion control for etching processes

A substrate is disposed on a substrate holder within a process module. The substrate includes a mask material overlying a target material with at least one portion of the target material exposed through an opening in the mask material. A plasma is generated in exposure to the substrate. For a... Lam Research Corporation

03/15/18 / #20180076100

Systems and methods for detection of plasma instability by electrical measurement

A wafer is positioned on a wafer support apparatus beneath an electrode such that a plasma generation region exists between the wafer and the electrode. Radiofrequency power is supplied to the electrode to generate a plasma within the plasma generation region during multiple sequential plasma processing cycles of a plasma... Lam Research Corporation

03/08/18 / #20180065274

Method and forming ceramic parts in hot isostatic press using ultrasonics

A method for forming a ceramic object from a ceramic powder is provided. The ceramic powder is placed in a press. Pressure is applied to the ceramic powder with a pressure to cause consolidation of the ceramic powder. Ultrasonic energy is applied to the ceramic powder for at least a... Lam Research Corporation

03/08/18 / #20180068833

Systems and methods for suppressing parasitic plasma and reducing within-wafer non-uniformity

A substrate processing system for depositing film on a substrate includes a processing chamber defining a reaction volume. A showerhead includes a stem portion having one end connected adjacent to an upper surface of the processing chamber. A base portion is connected to an opposite end of the stem portion... Lam Research Corporation

03/08/18 / #20180068834

Using modeling to determine ion energy associated with a plasma system

Systems and methods for determining ion energy are described. One of the methods includes detecting output of a generator to identify a generator output complex voltage and current (V&I). The generator is coupled to an impedance matching circuit and the impedance matching circuit is coupled to an electrostatic chuck (ESC).... Lam Research Corporation

03/08/18 / #20180068879

Front opening ring pod

A pod for exchanging consumable parts with a process module includes a base plate having a front side, a back side, and first and second lateral sides. A first support column is disposed on the first lateral side proximal to the front side. A second support column is disposed on... Lam Research Corporation

03/01/18 / #20180057940

Rotary friction welded blank for pecvd heated showerhead

A deposition apparatus for processing substrates includes a vacuum chamber including a processing zone in which a substrate may be processed. A showerhead assembly includes a stem, face plate and back plate wherein the stem is rotary friction welded to the back plate. A substrate pedestal assembly is configured to... Lam Research Corporation

03/01/18 / #20180061628

Selective atomic layer deposition for gapfill using sacrificial underlayer

Methods and apparatuses for depositing films in high aspect ratio features and trenches on substrates using atomic layer deposition and deposition of a sacrificial layer during atomic layer deposition are provided. Sacrificial layers are materials deposited at or near the top of features and trenches prior to exposing the substrate... Lam Research Corporation

03/01/18 / #20180061650

High dry etch rate materials for semiconductor patterning applications

Methods and apparatuses for depositing low density spacers using atomic layer deposition for negative patterning schemes are provided herein. Methods involve one or more of: (1) exposing a substrate to a plasma for a duration less than about 300 ms in each cycle of alternating pulses of a deposition precursor... Lam Research Corporation

03/01/18 / #20180061659

Silicon-based deposition for semiconductor processing

A method for processing a substrate in a processing chamber, comprising forming a deposition over the substrate is provided. A silicon containing gas is flowed into the processing chamber. A COS containing gas is flowed into the processing chamber. A plasma is formed from the silicon containing gas and the... Lam Research Corporation

03/01/18 / #20180061663

Continuous and pulsed rf plasma for etching metals

Methods for etching tungsten and other metal or metal-containing films using a nitrogen-containing etchant gas are provided. The methods involve exposing the film to a continuous wave (CW) plasma and switching to a pulsed plasma toward the end of the etching operation. The pulsed plasma has a lower concentration of... Lam Research Corporation

02/22/18 / #20180053629

Control of on-wafer cd uniformity with movable edge ring and gas injection adjustment

A substrate support in a substrate processing system includes an inner portion and an outer portion. The inner portion is positioned below a gas distribution device configured to direct first process gases toward the inner portion. The outer portion includes an edge ring positioned around an outer perimeter of the... Lam Research Corporation

02/22/18 / #20180053632

Computation of statistics for statistical data decimation

Systems and methods for statistical data decimation are described. The method includes receiving a variable from a radio frequency (RF) system, propagating the variable through a model of the RF system, and counting an output of the model for the variable to generate a count. The method further includes determining... Lam Research Corporation

02/22/18 / #20180053660

Method for preventing line bending during metal fill process

Provided herein are methods and apparatuses for reducing line bending when depositing a metal such as tungsten, molybdenum, ruthenium, or cobalt into features on substrates by periodically exposing the feature to nitrogen, oxygen, or ammonia during atomic layer deposition, chemical vapor deposition, or sequential chemical vapor deposition to reduce interactions... Lam Research Corporation

02/15/18 / #20180044790

Additive for ald deposition profile tuning in gap features

A method for performing atomic layer deposition (ALD) on a substrate is provided, including: exposing the substrate to a first reactant and an additive simultaneously, the first reactant and the additive being configured to adsorb on exposed surfaces of the substrate, a partial pressure of the additive being configured so... Lam Research Corporation

02/15/18 / #20180044791

Minimizing radical recombination using ald silicon oxide surface coating with intermittent restoration plasma

Certain embodiments herein relate to an apparatus used for remote plasma processing. In various embodiments, the apparatus includes a reaction chamber that is conditioned by forming a low recombination material coating on interior chamber surfaces. The low recombination material helps minimize the degree of radical recombination that occurs when the... Lam Research Corporation

02/15/18 / #20180047543

Systems and methods for rf power ratio switching for iterative transitioning between etch and deposition processes

A system is provided and includes a first linear motor, a first separator support assembly, and a controller. The first linear motor includes a shaft that is linearly driven based on a current supplied to the first linear motor. The first separator support assembly is configured to connect to the... Lam Research Corporation

02/15/18 / #20180047548

Differentially pumped reactive gas injector

One process used to remove material from a surface is ion etching. In certain cases, ion etching involves delivery of both ions and a reactive gas to a substrate. The disclosed embodiments permit local high pressure delivery of reactive gas to a substrate while maintaining a much lower pressure on... Lam Research Corporation

02/15/18 / #20180047594

Method for conditioning silicon part

A method for conditioning and cleaning a silicon part is provided. The silicon part is heated to a temperature of at least 300° C. in the presence of oxygen to form an outer surface of the silicon part into silicon oxide. The silicon part is placed in a wet bath... Lam Research Corporation

02/15/18 / #20180047598

Platform architecture to improve system productivity

A loading station for a substrate processing system includes first and second vertically-stacked loading stations. The first loading station includes a first airlock volume and first and second valves arranged at respective ends of the first loading station. The first and second valves are configured to selectively provide access to... Lam Research Corporation

02/15/18 / #20180047645

Suppressing interfacial reactions by varying the wafer temperature throughout deposition

Disclosed are methods of and apparatuses and systems for depositing a film in a multi-station deposition apparatus. The methods may include: (a) providing a substrate to a first station of the apparatus, (b) adjusting the temperature of the substrate to a first temperature, (c) depositing a first portion of the... Lam Research Corporation

02/08/18 / #20180038009

Methods and apparatuses for electroplating and seed layer detection

Disclosed herein are methods and apparatuses for electroplating which employ seed layer detection. Such methods and related apparatuses may operate by selecting a wafer for processing, measuring from its surface one or more in-process color signals having one or more color components, calculating one or more metrics, each metric indicative... Lam Research Corporation

02/08/18 / #20180040460

Methods and systems for monitoring plasma processing systems and advanced process and tool control

Method and systems for operating a plasma processing chamber are provided. One example method includes processing a substrate in the plasma processing chamber under vacuum. The processing of said substrate producing particulate residues that adhere to surfaces within an internal region of the plasma processing chamber. The method includes characterizing... Lam Research Corporation

02/08/18 / #20180040479

Partial net shape and partial near net shape silicon carbide chemical vapor deposition

A method for fabricating a structure having surfaces exposed to plasma in a substrate processing system includes providing a sacrificial substrate having a first shape, machining the substrate into a second shape, the second shape having dimensions corresponding to a desired final shape of the structure, depositing a layer of... Lam Research Corporation

02/08/18 / #20180040492

Front opening ring pod

A pod for exchanging consumable parts with a process module includes a base plate having a front side, a back side, and first and second lateral sides. A first support column is disposed on the first lateral side proximal to the front side. A second support column is disposed on... Lam Research Corporation

02/01/18 / #20180032062

Systems for removing and replacing consumable parts from a semiconductor process module in situ

A cluster tool assembly includes a vacuum transfer module, a process module having a first side connected to the vacuum transfer module. An isolation valve having a first side and a second side, the first side of the isolation valve coupled to a second side of the process module. A... Lam Research Corporation

Patent Packs
02/01/18 / #20180033596

Sub-pulsing during a state

A method for achieving sub-pulsing during a state is described. The method includes receiving a clock signal from a clock source, the clock signal having two states and generating a pulsed signal from the clock signal. The pulsed signal has sub-states within one of the states. The sub-states alternate with... Lam Research Corporation

02/01/18 / #20180033622

Doped ald films for semiconductor patterning applications

Methods and apparatuses for patterning substrates using a positive patterning scheme are described herein. Methods involve receiving a substrate having a patterned core material, depositing a doped spacer material conformally over the patterned core material, selectively etching the core material to the doped spacer material to form a spacer mask,... Lam Research Corporation

02/01/18 / #20180033635

Integrating atomic scale processes: ald (atomic layer deposition) and ale (atomic layer etch)

Methods are provided for integrating atomic layer etch and atomic layer deposition by performing both processes in the same chamber or reactor. Methods involve sequentially alternating between atomic layer etch and atomic layer deposition processes to prevent feature degradation during etch, improve selectivity, and encapsulate sensitive layers of a semiconductor... Lam Research Corporation

02/01/18 / #20180033657

Pressure purge etch etching complex 3-d structures

A method for etching a substrate and removing byproducts includes a) setting process parameters of a processing chamber for a selective dry etch process; b) setting process pressure of the processing chamber to a first predetermined pressure in a range from 1 Torr to 10 Torr for the selective dry... Lam Research Corporation

02/01/18 / #20180033672

Substrate support with increasing areal density and corresponding fabricating

A substrate support for a substrate processing system is provided and includes a body and mesas. The mesas are distributed across and extending from and in a direction away from the body. The mesas are configured to support a substrate. Each of the mesas includes a surface area that contacts... Lam Research Corporation

01/25/18 / #20180025891

Systems and methods for achieving a pre-determined factor associated with an edge region within a plasma chamber by synchronizing main and edge rf generators

Systems and methods for achieving a pre-determined factor associated with the edge region within the plasma chamber is described. One of the methods includes providing an RF signal to a main electrode within the plasma chamber. The RF signal is generated based on a frequency of operation of a first... Lam Research Corporation

01/25/18 / #20180025893

Edge exclusion control with adjustable plasma exclusion zone ring

Systems and methods for edge exclusion control are described. One of the systems includes a plasma chamber. The plasma processing chamber includes a lower electrode having a surface for supporting a substrate. The lower electrode is coupled with a radio frequency (RF) power supply. The plasma processing chamber further includes... Lam Research Corporation

01/25/18 / #20180025930

Control of wafer bow in multiple stations

A system for controlling of wafer bow in plasma processing stations is described. The system includes a circuit that provides a low frequency RF signal and another circuit that provides a high frequency RF signal. The system includes an output circuit and the stations. The output circuit combines the low... Lam Research Corporation

01/18/18 / #20180018418

Segmenting a model within a plasma system

Systems and methods for segmenting an impedance matching model are described. One of the methods includes receiving the impedance matching model. The impedance matching model represents an impedance matching circuit, which is coupled to an RF generator via an RF cable and to a plasma chamber via an RF transmission... Lam Research Corporation

01/18/18 / #20180019142

Front opening ring pod

A pod for exchanging consumable parts with a process module includes a base plate having a front side, a back side, and first and second lateral sides. A first support column is disposed on the first lateral side proximal to the front side. A second support column is disposed on... Lam Research Corporation

01/18/18 / #20180019387

Dry plasma etch method to pattern mram stack

Methods of etching metal by depositing a material reactive with a metal to be etched and a halogen to form a volatile species and exposing the substrate to a halogen-containing gas and activation gas to etch the substrate are provided. Deposited materials may include silicon, germanium, titanium, carbon, tin, and... Lam Research Corporation

01/11/18 / #20180010250

Single ald cycle thickness control in multi-station substrate deposition systems

Disclosed are methods of depositing films of material on multiple semiconductor substrates in a multi-station processing chamber. The methods may include loading a first set of one or more substrates into the processing chamber at a first set of one or more process stations and depositing film material onto the... Lam Research Corporation

01/11/18 / #20180012733

Collar, conical showerheads and/or top plates for reducing recirculation in a substrate processing system

A substrate processing system includes a processing chamber and a showerhead including a faceplate, a stem portion and a cylindrical base portion. A collar connects the showerhead to a top surface of the processing chamber. The collar defines a gas channel to receive secondary purge gas and a plurality of... Lam Research Corporation

01/11/18 / #20180012759

Tin oxide thin film spacers in semiconductor device manufacturing

Thin tin oxide films are used as spacers in semiconductor device manufacturing. In one implementation, thin tin oxide film is conformally deposited onto a semiconductor substrate having an exposed layer of a first material (e.g., silicon oxide or silicon nitride) and a plurality of protruding features comprising a second material... Lam Research Corporation

01/11/18 / #20180012785

Electrostatic chuck with features for preventing electrical arcing and light-up and improving process uniformity

A substrate support for a substrate processing system includes a baseplate, a bond layer provided on the baseplate, and a ceramic layer arranged on the bond layer. The ceramic layer includes a first region and a second region located radially outward of the first region, the first region has a... Lam Research Corporation

Patent Packs
01/04/18 / #20180004083

Vacuum-integrated hardmask processes and apparatus

Vacuum-integrated photoresist-less methods and apparatuses for forming metal hardmasks can provide sub-30 nm patterning resolution. A metal-containing (e.g., metal salt or organometallic compound) film that is sensitive to a patterning agent is deposited on a semiconductor substrate. The metal-containing film is then patterned directly (i.e., without the use of a... Lam Research Corporation

01/04/18 / #20180005801

Apparatus and deposition and etch in gap fill

Provided are apparatuses and methods for performing deposition and etch processes in an integrated tool. An apparatus may include a plasma processing chamber that is a capacitively-coupled plasma reactor, and the plasma processing chamber can include a showerhead that includes a top electrode and a pedestal that includes a bottom... Lam Research Corporation

01/04/18 / #20180005802

Systems and methods for tailoring ion energy distribution function by odd harmonic mixing

Systems and methods for controlling a process applied to a substrate within a plasma chamber are described. The systems and methods include generating and supplying odd harmonic signals and summing the odd harmonic signals to generate an added signal. The added signal is supplied to an electrode within the plasma... Lam Research Corporation

01/04/18 / #20180005803

Methods and systems for independent control of radical density, ion density, and ion energy in pulsed plasma semiconductor device fabrication

For a first period of time, a higher radiofrequency power is applied to generate a plasma in exposure to a substrate, while applying low bias voltage at the substrate level. For a second period of time, a lower radiofrequency power is applied to generate the plasma, while applying high bias... Lam Research Corporation

01/04/18 / #20180005804

Waferless clean in dielectric etch process

A system and method for a waferless cleaning method for a capacitive coupled plasma system. The method includes forming a protective layer on a top surface of an electrostatic chuck, volatilizing etch byproducts deposited on one or more inner surfaces of the plasma process chamber, removing volatilized etch byproducts from... Lam Research Corporation

01/04/18 / #20180005814

Selective atomic layer deposition with post-dose treatment

Methods and apparatuses for depositing films in high aspect ratio features and trenches using a post-dose treatment operation during atomic layer deposition are provided. Post-dose treatment operations are performed after adsorbing precursors onto the substrate to remove adsorbed precursors at the tops of features prior to converting the adsorbed precursors... Lam Research Corporation

01/04/18 / #20180005819

Substrate processing depositing a barrier layer to prevent photoresist poisoning

A method for depositing a barrier layer includes a) arranging a substrate including a nitride layer in a processing chamber; b) setting a process temperature in the processing chamber to a predetermined process temperature range; c) setting a process pressure in the processing chamber to a predetermined process pressure range;... Lam Research Corporation

01/04/18 / #20180005839

Environmentally green process and composition for cobalt wet etch

An environmentally green wet etch process for selective removal of cobalt metal generally includes applying water that is free of added buffers, acids, and/or bases to a substrate including exposed cobalt metal. The process can be utilized to form recesses where desired such as may be implemented for metal contact... Lam Research Corporation

01/04/18 / #20180005851

Chamber filler kit for dielectric etch chamber

A chamber filler kit for balancing electric fields in a dielectric etch chamber is provided. A transport module filler comprises an electrical conductive body, an etch resistant surface, wherein the etch resistant surface comprises an inner curved surface, which matches a partial cylindrical bore of the etch chamber, and a... Lam Research Corporation

01/04/18 / #20180005852

Ion to neutral control for wafer processing with dual plasma source reactor

The disclosed techniques relate to methods and apparatus for etching a substrate. A plate assembly divides a reaction chamber into a lower and upper sub-chamber. The plate assembly includes an upper and lower plate having apertures therethrough. When the apertures in the upper and lower plates are aligned, ions and... Lam Research Corporation

01/04/18 / #20180005857

System and substrate support feed-forward temperature control based on rf power

A temperature controller is provided and includes interfaces, a compensation controller, summers, and a second controller. An interface receives a bias power signal and a plasma signal. The bias power signal indicates a bias RF power level of a RF generator. The plasma signal indicates a plasma RF power level... Lam Research Corporation

01/04/18 / #20180005859

Method for reducing temperature transition in an electrostatic chuck

A method for controlling a substrate temperature in a substrate processing system includes determining a temperature difference between the substrate temperature before the substrate is loaded onto a substrate support device and a desired temperature for the substrate support device and, during a first period, controlling a thermal control element... Lam Research Corporation

01/04/18 / #20180005865

End effector assembly for clean/dirty substrate handling

An end effector includes a body, a first tine, and a second tine. The body includes first, second, and third substrate support pads, the first substrate support pad defines a first height, the second substrate support pad defines a second height less than the first height, and the third substrate... Lam Research Corporation

01/04/18 / #20180005867

Esc ceramic sidewall modification for particle and metals performance enhancements

A substrate support for a substrate processing system includes a baseplate and a ceramic layer arranged on the baseplate. The ceramic layer includes a lower surface, an upper surface configured to support a substrate, and sidewalls around a perimeter of the ceramic layer extending from the lower surface to the... Lam Research Corporation

12/28/17 / #20170371991

Methods and apparatuses for etch profile optimization by reflectance spectra matching and surface kinetic model optimization

Disclosed are methods of optimizing a computer model which relates the etch profile of a feature on a semiconductor substrate to a set of independent input parameters (A), via the use of a plurality of model parameters (B). In some embodiments, the methods may include modifying one or more values... Lam Research Corporation

12/28/17 / #20170372872

Uniformity control circuit for use within an impedance matching circuit

An impedance matching circuit (IMC) is described. The IMC includes a first circuit that includes a first plurality of tuning elements defined along a path. The first circuit has an input coupled to a kilohertz (kHz) radio frequency (RF) generator. The first circuit is coupled to an output. The IMC... Lam Research Corporation

12/28/17 / #20170372895

Method of densifying films in semiconductor device

Methods of densifying films, cross-linking films, and controlling the stress of films are provided herein. Methods include forming a removable film on a substrate comprising a material to be densified, and annealing the substrate to transfer stress from the removable film to the material and thereby densify the material. Some... Lam Research Corporation

12/28/17 / #20170372911

Ion beam etching utilizing cryogenic wafer temperatures

The embodiments herein relate to methods and apparatus for etching features in semiconductor substrates. In a number of cases, the features may be etched while forming a spin-torque-transfer random access memory (STT-RAM) device. In various embodiments, the substrate may be cooled to a low temperature via a cooled substrate support... Lam Research Corporation

12/28/17 / #20170372912

Systems and methods for reverse pulsing

Systems and methods for reverse pulsing are described. One of the methods includes receiving a digital signal having a first state and a second state. The method further includes generating a transformer coupled plasma (TCP) radio frequency (RF) pulsed signal having a high state when the digital signal is in... Lam Research Corporation

12/21/17 / #20170362705
12/21/17 / #20170362713

Showerhead curtain gas film profile modulation

Disclosed are methods of and systems for depositing a film. The methods may include: (a) determining process conditions, including a flow condition of a curtain gas that flows around the periphery of each station in the chamber, for performing film deposition in the chamber, (b) flowing the curtain gas to... Lam Research Corporation

12/21/17 / #20170362734
12/21/17 / #20170363950

Photoresist design layout pattern proximity correction through fast edge placement error prediction via a physics-based etch profile modeling framework

Disclosed are methods of generating a proximity-corrected design layout for photoresist to be used in an etch operation. The methods may include identifying a feature in an initial design layout, and estimating one or more quantities characteristic of an in-feature plasma flux (IFPF) within the feature during the etch operation.... Lam Research Corporation

12/21/17 / #20170365513

Tungsten feature fill with nucleation inhibition

Described herein are methods of filling features with tungsten, and related systems and apparatus, involving inhibition of tungsten nucleation. In some embodiments, the methods involve selective inhibition along a feature profile. Methods of selectively inhibiting tungsten nucleation can include exposing the feature to ammonia vapor in a non-plasma process. Process... Lam Research Corporation

12/21/17 / #20170365907

Combiner and distributor for adjusting impedances or power across multiple plasma processing stations

Systems and methods for adjusting impedances or power or a combination thereof across multiple plasma processing stations are described. One of the systems includes a first radio frequency (RF) generator that generates a first RF signal having a first frequency, a second RF generator that generates a second RF signal... Lam Research Corporation








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