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Lg Siltron Inc
Lg Siltron Incorporated
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Lg Siltron Inc patents


Recent patent applications related to Lg Siltron Inc. Lg Siltron Inc is listed as an Agent/Assignee. Note: Lg Siltron Inc may have other listings under different names/spellings. We're not affiliated with Lg Siltron Inc, we're just tracking patents.

ARCHIVE: New 2018 2017 2016 2015 2014 2013 2012 2011 2010 2009 | Company Directory "L" | Lg Siltron Inc-related inventors


Method for manufacturing silicon single crystal ingot, and silicon single crystal ingot manufactured by the method

An embodiment provides a method for manufacturing a silicon single crystal ingot by using a silicon single crystal growing apparatus comprising: a chamber; a crucible arranged inside the chamber and accommodating a molten silicon solution; a heater arranged outside the crucible so as to heat the crucible; a heat shielding... Lg Siltron Inc

Wafer transfer device

An embodiment comprises: a guide moving in the vertical direction or the horizontal direction; a transfer arm provided on the guide and loading spaced apart wafers; a laser emission unit disposed on the guide and emitting first laser beams at the spaced apart wafers loaded on the transfer arm; and... Lg Siltron Inc

Wire sawing apparatus

A wire sawing apparatus of one embodiment comprises: a wire for cutting an ingot; an ingot conveyor unit for conveying the ingot to the wire; a nozzle for supplying slurry to the wire; and a dispersed slurry blocking unit disposed above the ingot sawed by the wire, so as to... Lg Siltron Inc

Apparatus and growing silicon single crystal ingot

An embodiment provides a method for growing a silicon single crystalline ingot that may include: preparing a silicon melt solution in a crucible; probing a seed in the silicon melt solution; rotating the seed and the crucible while applying a horizontal magnetic field to the crucible; and pulling up an... Lg Siltron Inc

Wafer polishing apparatus and wafer polishing method using same

An embodiment comprises: a lower plate; an upper plate which is disposed on the lower plate and rotates; a carrier which receives a wafer and is disposed on the lower plate; and a sensor unit for irradiating light to the wafer received in the carrier, detecting light reflected by the... Lg Siltron Inc

Monocrystal growth system and method capable of controlling shape of ingot interface

The present invention relates a method for controlling a growth interface shape while growing a monocrystal ingot by a Czochralski method, the method including a step of starting a growth of the monocrystal ingot after setting a control condition of a monocrystal growing process so that an interface of the... Lg Siltron Inc

Wafer loading apparatus of wafer polishing equipment and adjusting wafer loading position

An embodiment relates to a wafer loading apparatus of wafer polishing equipment. Provided is the wafer loading apparatus of wafer polishing equipment, comprising: a wafer polisher that includes a polishing carrier having a wafer hole formed therein in which a wafer is loaded, wherein both sides of the wafer are... Lg Siltron Inc

Silicon single crystal growing apparatus and silocon single crystal growing method using same

An exemplary embodiment of the present invention provides a silicon single crystal growing apparatus and method. The apparatus comprises: a chamber; a crucible that is disposed in the chamber and receives melted silicon; a heater disposed outside the crucible to heat the crucible; a heat shield part disposed in the... Lg Siltron Inc

Method for preparing restart of reactor for epitaxial growth on wafer

Provided is a process of baking the inside of a reaction chamber in a re-operation preparation process of the reaction chamber in which epitaxial growth is performed on a wafer. The process of baking the inside of the reaction chamber in the re-operation preparation process of the reaction chamber in... Lg Siltron Inc

Method of preparing for re-operation of reactor for growing epitaxial wafer

Provided is a re-operation preparation process of a reaction chamber in which epitaxial growth is performed on a wafer. The re-operation preparation process of the reaction chamber includes disposing a susceptor provided in the reaction chamber and on which the wafer is seated at a preset first position and setting... Lg Siltron Inc

Seed chuck and ingot growing apparatus including same

The present invention relates to a seed chuck accommodating seed crystal so as to grow ingots in molten silicon, comprising: a neck cover for blocking thermal emission in the upward direction of the molten silicon; and a fixing part arranged on a bottom surface of the neck cover and accommodating... Lg Siltron Inc

Defect measuring device for wafers

The device for measuring wafer defects includes a lower blower configured to inject air to a lower surface of a wafer to float the wafer; an upper blower provided to be moved up and down with respect to the lower blower and configured to inject the air to an upper... Lg Siltron Inc

Semiconductor substrate

Provided is a semiconductor substrate including a seed layer disposed on a substrate, a buffer layer disposed on the seed layer, a plurality of nitride semiconductor layers disposed on the buffer layer, and at least one stress control layer between the plurality of nitride semiconductor layers. The buffer layer includes... Lg Siltron Inc

Apparatus for measuring impurities on wafer and measuring impurities on wafer

Provided are an apparatus for measuring impurities on a wafer and a method of measuring impurities on a wafer. The apparatus includes: a wafer aligning device for aligning a wafer; a loading robot for moving and loading the aligned wafer; a rotation stage for rotating the loaded wafer; a scan... Lg Siltron Inc








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