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Lg Siltron Incorporated patents


Recent patent applications related to Lg Siltron Incorporated. Lg Siltron Incorporated is listed as an Agent/Assignee. Note: Lg Siltron Incorporated may have other listings under different names/spellings. We're not affiliated with Lg Siltron Incorporated, we're just tracking patents.

ARCHIVE: New 2018 2017 2016 2015 2014 2013 2012 2011 2010 2009 | Company Directory "L" | Lg Siltron Incorporated-related inventors


 new patent  Ingot pressing apparatus and ingot slicing apparatus including the same

A pressing head of the ingot slicing apparatus includes: a head main body in which a plurality of pneumatic supply ports configured to supply compressed air are formed so that pressure on each portion of the pressing head is separately controlled; pressing units installed on a lower end of the head main body, located to correspond to the pneumatic supply ports, and each configured to apply pressure to a side surface of an ingot by the compressed air supplied through each of the pneumatic supply ports; pneumatic correction units each installed on a lower surface of each of the pressing units and configured to control a pressure deviation between the plurality of pressing units; an adhesive plate installed to be in contact with lower side surfaces of the pneumatic correction units so that a lower surface of the adhesive plate is in direct contact with and presses the side surface of the ingot; and a coupling support unit configured to couple and support the head main body, the pressing units, the pneumatic correction units, and the adhesive plate.. . ... Lg Siltron Incorporated

Wafer transfer device

An embodiment comprises: a guide moving in the vertical direction or the horizontal direction; a transfer arm provided on the guide and loading spaced apart wafers; a laser emission unit disposed on the guide and emitting first laser beams at the spaced apart wafers loaded on the transfer arm; and a laser detection unit disposed below the transfer arm and collecting, from among the first laser beams, second laser beams having passed through gaps between the spaced apart wafers.. . ... Lg Siltron Incorporated

Method for manufacturing silicon single crystal ingot, and silicon single crystal ingot manufactured by the method

An embodiment provides a method for manufacturing a silicon single crystal ingot by using a silicon single crystal growing apparatus comprising: a chamber; a crucible arranged inside the chamber and accommodating a molten silicon solution; a heater arranged outside the crucible so as to heat the crucible; a heat shielding part arranged inside the chamber; and a pulling part for pulling a single crystal growing from the molten silicon solution, wherein the method can comprise a step of respectively growing a neck part, a shoulder part and a body part.. . ... Lg Siltron Incorporated

Method of preparing for re-operation of reactor for growing epitaxial wafer

Provided is a re-operation preparation process of a reaction chamber in which epitaxial growth is performed on a wafer. The re-operation preparation process of the reaction chamber includes disposing a susceptor provided in the reaction chamber and on which the wafer is seated at a preset first position and setting a flow rate of a hydrogen gas introduced through a main valve so that the flow rate is greater than that of a hydrogen gas introduced through a slit valve and moving the susceptor to a preset second position and setting an amount of hydrogen gas introduced through the main valve while the susceptor is maintained at the second position so that the amount of hydrogen gas is less than that of hydrogen gas introduced through the slit valve. ... Lg Siltron Incorporated

Method for preparing restart of reactor for epitaxial growth on wafer

Provided is a process of baking the inside of a reaction chamber in a re-operation preparation process of the reaction chamber in which epitaxial growth is performed on a wafer. The process of baking the inside of the reaction chamber in the re-operation preparation process of the reaction chamber in which epitaxial growth is performed on the wafer includes rising an inner temperature of the reaction chamber in stages according to a time and introducing a hydrogen gas to upper and lower sides of a susceptor through a main valve and a slit valve, which are provided in a side surface of the reaction chamber. ... Lg Siltron Incorporated

Apparatus and method for growing silicon single crystal ingot

An embodiment provides a method for growing a silicon single crystalline ingot that may include: preparing a silicon melt solution in a crucible; probing a seed in the silicon melt solution; rotating the seed and the crucible while applying a horizontal magnetic field to the crucible; and pulling up an ingot grown from the silicon melt solution, wherein an interface between the growing ingot and the silicon melt solution is formed downward from a horizontal plane at 1 to 5 millimeters, and a bulk micro defects (bmd) size of the grown ingot is between 55 and 65 nanometers.. . ... Lg Siltron Incorporated

Wire sawing apparatus

A wire sawing apparatus of one embodiment comprises: a wire for cutting an ingot; an ingot conveyor unit for conveying the ingot to the wire; a nozzle for supplying slurry to the wire; and a dispersed slurry blocking unit disposed above the ingot sawed by the wire, so as to absorb at least a part of the slurry dispersed from the lateral sides of the ingot cut by the wire.. . ... Lg Siltron Incorporated

Monocrystal growth system and method capable of controlling shape of ingot interface

The present invention relates a method for controlling a growth interface shape while growing a monocrystal ingot by a czochralski method, the method including a step of starting a growth of the monocrystal ingot after setting a control condition of a monocrystal growing process so that an interface of the ingot becomes a target shape; a step of deriving a measurement value by measuring a weight of the ingot grown for a predetermined time by means of a load cell disposed on an upper portion the monocrystal ingot; a step of deriving a theoretical value of the weight of the monocrystal ingot through a diameter of the monocrystal ingot measured by a diameter measuring camera disposed outside of a process chamber for a predetermined time and a height of the monocrystal ingot grown for the predetermined time; a step of predicting a growth interface shape of a growing monocrystal ingot by deriving a difference between the measurement value and the theoretical value; and changing process conditions during growth of the monocrystal ingot by comparing the predicted interface shape of the monocrystal ingot with the targeted interface shape of the monocrystal ingot. Therefore, the interface shape of the growing ingot may be predicted during the growing process of the monocrystal ingot, and the process conditions may be controlled to grow the silicon ingot in the targeted interface shape.. ... Lg Siltron Incorporated

Wafer polishing apparatus and wafer polishing method using same

An embodiment comprises: a lower plate; an upper plate which is disposed on the lower plate and rotates; a carrier which receives a wafer and is disposed on the lower plate; and a sensor unit for irradiating light to the wafer received in the carrier, detecting light reflected by the wafer, and outputting detection data according to the detection result, wherein the sensor unit rotates together with the upper plate.. . ... Lg Siltron Incorporated

Wafer loading apparatus of wafer polishing equipment and method for adjusting wafer loading position

An embodiment relates to a wafer loading apparatus of wafer polishing equipment. Provided is the wafer loading apparatus of wafer polishing equipment, comprising: a wafer polisher that includes a polishing carrier having a wafer hole formed therein in which a wafer is loaded, wherein both sides of the wafer are polished by top and bottom boards; a wafer transferrer that includes a transfer arm disposed above the polishing carrier to transfer the wafer, wherein a transfer plate corresponding to a shape of the wafer is connected to one end the transfer arm; a wafer position detector mounted on a bottom surface of the transfer plate to detect a position of the wafer hole; a plurality of wafer attachment/detachment units formed on an edge portion of the transfer plate; a wafer aligner mounted on a top surface of the transfer plate to align the wafer; and a controller to which data on the position of the wafer hole, which is detected by the wafer position detector, is transmitted and which calculates a position where the wafer is to be loaded by the wafer attachment/detachment unit and the wafer aligner.. ... Lg Siltron Incorporated

Seed chuck and ingot growing apparatus including same

The present invention relates to a seed chuck accommodating seed crystal so as to grow ingots in molten silicon, comprising: a neck cover for blocking thermal emission in the upward direction of the molten silicon; and a fixing part arranged on a bottom surface of the neck cover and accommodating the seed crystal, wherein the neck cover comprises: a top surface connected to a lifting cable; the bottom surface; and a circumferential surface connecting the top surface and the bottom surface, the circumferential surface is formed with an inclination angle with respect to the bottom surface, and a measurement part for measuring the molten silicon is opened in the neck cover such that the neck cover is positioned on the hole of an upper insulator so as to minimize heat loss through the hole of the upper insulator during a melting step and does not interfere in the temperature measurement of the molten silicon, thereby helping the temperature measurement of the molten silicon and increasing the reliability of molten silicon temperature sensing.. . ... Lg Siltron Incorporated

Lg Siltron Inc.

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Silicon single crystal growing apparatus and silocon single crystal growing method using same

An exemplary embodiment of the present invention provides a silicon single crystal growing apparatus and method. The apparatus comprises: a chamber; a crucible that is disposed in the chamber and receives melted silicon; a heater disposed outside the crucible to heat the crucible; a heat shield part disposed in the chamber; and an auxiliary heat shield part disposed above the crucible to move upward and downward, wherein the auxiliary heat shield part is disposed to be separated from a body part of a single crystal that has grown from the melted silicon, and a rising speed is controlled such that a defect-free zone in the single crystal body part increases. ... Lg Siltron Incorporated

Semiconductor substrate

Provided is a semiconductor substrate including a seed layer disposed on a substrate, a buffer layer disposed on the seed layer, a plurality of nitride semiconductor layers disposed on the buffer layer, and at least one stress control layer between the plurality of nitride semiconductor layers. The buffer layer includes a plurality of step regions and at least one heterogeneous region. ... Lg Siltron Incorporated

03/09/17 / #20170069515

Apparatus for measuring impurities on wafer and method of measuring impurities on wafer

Provided are an apparatus for measuring impurities on a wafer and a method of measuring impurities on a wafer. The apparatus includes: a wafer aligning device for aligning a wafer; a loading robot for moving and loading the aligned wafer; a rotation stage for rotating the loaded wafer; a scan robot for holding a natural oxide layer etching solution for the wafer and a metallic impurity recovery solution; and a container for receiving a predetermined etching solution and a recovery solution, wherein the scan robot removes an oxide layer on an edge region of the wafer.. ... Lg Siltron Incorporated








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