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M a com Technology Solutions Holdings Inc patents


Recent patent applications related to M a com Technology Solutions Holdings Inc. M a com Technology Solutions Holdings Inc is listed as an Agent/Assignee. Note: M a com Technology Solutions Holdings Inc may have other listings under different names/spellings. We're not affiliated with M a com Technology Solutions Holdings Inc, we're just tracking patents.

ARCHIVE: New 2018 2017 2016 2015 2014 2013 2012 2011 2010 2009 | Company Directory "M" | M a com Technology Solutions Holdings Inc-related inventors


High-power amplifier package

Package assemblies for improving heat dissipation of high-power components in microwave circuits are described. A laminate that includes microwave circuitry may have cut-outs that allow high-power components to be mounted directly on a heat slug below the laminate. Electrical connections to circuitry on the laminate may be made with wire... M a com Technology Solutions Holdings Inc

Ultra-broad bandwidth matching technique

A multicomponent network may be added to a transmission line in a high-frequency circuit to transform a first impedance of a downstream circuit element to second impedance that better matches the impedance of an upstream circuit element. The multicomponent network may be added at a distance more than one-quarter wavelength... M a com Technology Solutions Holdings Inc

Tuned semiconductor amplifier

Methods and structures for improving the performance of integrated semiconductor transistors operating at high frequency and/or high power are described. Two capacitors may be connected to an input of a semiconductor transistor and tuned to suppress second-harmonic generation and to transform and match the input impedance of the device. A... M a com Technology Solutions Holdings Inc

Parasitic channel mitigation via reaction with active species

III-nitride materials are generally described herein, including material structures comprising III-nitride material regions and silicon-containing substrates. Certain embodiments are related to gallium nitride materials and material structures comprising gallium nitride material regions and silicon-containing substrates.... M a com Technology Solutions Holdings Inc

Methods of spatially implanting species in iii-nitride semiconductor structures

III-nitride materials are generally described herein, including material structures comprising III-nitride material regions and silicon-containing substrates. Certain embodiments are related to gallium nitride materials and material structures comprising gallium nitride material regions and silicon-containing substrates.... M a com Technology Solutions Holdings Inc

Parasitic channel mitigation in iii-nitride material semiconductor structures

III-nitride materials are generally described herein, including material structures comprising III-nitride material regions and silicon-containing substrates. Certain embodiments are related to gallium nitride materials and material structures comprising gallium nitride material regions and silicon-containing substrates.... M a com Technology Solutions Holdings Inc

Parasitic channel mitigation using aluminum nitride diffusion barrier regions

III-nitride materials are generally described herein, including material structures comprising III-nitride material regions and silicon-containing substrates. Certain embodiments are related to gallium nitride materials and material structures comprising gallium nitride material regions and silicon-containing substrates.... M a com Technology Solutions Holdings Inc

Parasitic channel mitigation using rare-earth oxide and/or rare-earth nitride diffusion barrier regions

III-nitride materials are generally described herein, including material structures comprising III-nitride material regions and silicon-containing substrates. Certain embodiments are related to gallium nitride materials and material structures comprising gallium nitride material regions and silicon-containing substrates.... M a com Technology Solutions Holdings Inc

Iii-nitride semiconductor structures comprising low atomic mass species

III-nitride materials are generally described herein, including material structures comprising III-nitride material regions and silicon-containing substrates. Certain embodiments are related to gallium nitride materials and material structures comprising gallium nitride material regions and silicon-containing substrates.... M a com Technology Solutions Holdings Inc

Parasitic channel mitigation using silicon carbide diffusion barrier regions

III-nitride materials are generally described herein, including material structures comprising III-nitride material regions and silicon-containing substrates. Certain embodiments are related to gallium nitride materials and material structures comprising gallium nitride material regions and silicon-containing substrates.... M a com Technology Solutions Holdings Inc

Parasitic channel mitigation using elemental diboride diffusion barrier regions

III-nitride materials are generally described herein, including material structures comprising III-nitride material regions and silicon-containing substrates. Certain embodiments are related to gallium nitride materials and material structures comprising gallium nitride material regions and silicon-containing substrates.... M a com Technology Solutions Holdings Inc

Iii-nitride semiconductor structures comprising multiple spatially patterned implanted species

III-nitride materials are generally described herein, including material structures comprising III-nitride material regions and silicon-containing substrates. Certain embodiments are related to gallium nitride materials and material structures comprising gallium nitride material regions and silicon-containing substrates.... M a com Technology Solutions Holdings Inc

Parasitic channel mitigation via implantation of low atomic mass species

III-nitride materials are generally described herein, including material structures comprising III-nitride material regions and silicon-containing substrates. Certain embodiments are related to gallium nitride materials and material structures comprising gallium nitride material regions and silicon-containing substrates.... M a com Technology Solutions Holdings Inc

Parasitic channel mitigation via back side implantation

III-nitride materials are generally described herein, including material structures comprising III-nitride material regions and silicon-containing substrates. Certain embodiments are related to gallium nitride materials and material structures comprising gallium nitride material regions and silicon-containing substrates.... M a com Technology Solutions Holdings Inc

Parasitic channel mitigation via counterdopant profile matching

III-nitride materials are generally described herein, including material structures comprising III-nitride material regions and silicon-containing substrates. Certain embodiments are related to gallium nitride materials and material structures comprising gallium nitride material regions and silicon-containing substrates.... M a com Technology Solutions Holdings Inc

Methods of spatially implanting multiple species in iii-nitride semiconductor structures

III-nitride materials are generally described herein, including material structures comprising III-nitride material regions and silicon-containing substrates. Certain embodiments are related to gallium nitride materials and material structures comprising gallium nitride material regions and silicon-containing substrates.... M a com Technology Solutions Holdings Inc

Iii-nitride semiconductor structures comprising spatially patterned implanted species

III-nitride materials are generally described herein, including material structures comprising III-nitride material regions and silicon-containing substrates. Certain embodiments are related to gallium nitride materials and material structures comprising gallium nitride material regions and silicon-containing substrates.... M a com Technology Solutions Holdings Inc








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