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Magnachip Semiconductor Ltd
Magnachip Semiconductor Ltd_20100114

Magnachip Semiconductor Ltd patents


Recent patent applications related to Magnachip Semiconductor Ltd. Magnachip Semiconductor Ltd is listed as an Agent/Assignee. Note: Magnachip Semiconductor Ltd may have other listings under different names/spellings. We're not affiliated with Magnachip Semiconductor Ltd, we're just tracking patents.

ARCHIVE: New 2018 2017 2016 2015 2014 2013 2012 2011 2010 2009 | Company Directory "M" | Magnachip Semiconductor Ltd-related inventors


Power semiconductor module and manufacturing the same

A power semiconductor module includes: a substrate including first, second, and third metal patterns separated from each other, a semiconductor element located on the substrate, a lead frame located on the substrate and including first, second, third, and fourth bodies; a first terminal connected to the first body, a second... Magnachip Semiconductor Ltd

Method of fabricating dmos and cmos transistors

A method of fabricating a semiconductor device including a diffused metal-oxide-semiconductor (DMOS) transistor, an n-type metal-oxide-semiconductor (NMOS) transistor, and a p-type metal-oxide-semiconductor (PMOS) transistor includes forming separation regions in a semiconductor substrate, forming a gate insulating film, forming a DMOS gate electrode on the gate insulating film, forming a first... Magnachip Semiconductor Ltd

Display driver semiconductor device and manufacturing method thereof

A display driver semiconductor device includes a high voltage well region being formed on a substrate, a first semiconductor device, a second semiconductor device, and a third semiconductor device. The first semiconductor device is formed on the high voltage well region and includes a first gate insulating layer. The second... Magnachip Semiconductor Ltd

Circuit for generating bias current for reading otp cell and control method thereof

Provided is a circuit for generating a bias current, which includes a current generation unit including a plurality of current mirrors that generate a plurality of currents having different levels. The circuit also includes a current generation control unit that controls the generating the plurality of current having different levels... Magnachip Semiconductor Ltd

One time programmable (otp) cell having improved programming reliability

A non-volatile semiconductor storage device includes a gate insulating film formed on a semiconductor substrate, a gate electrode formed on the gate insulating film, and first and second spaced apart doped regions formed below the gate insulating film and the gate electrode in the semiconductor substrate, wherein a grounded region... Magnachip Semiconductor Ltd

Otp cell having a reduced layout area

An anti-fuse device includes: a well region disposed in a semiconductor substrate; a gate electrode disposed on a gate insulating film on the semiconductor substrate; and a first well bias tap region disposed below the gate insulating film and the gate electrode in the well region, wherein the well bias... Magnachip Semiconductor Ltd

One-time programmable (otp) memory device

An OTP memory device includes an OTP memory cell array including OTP memory cells driven by an external supply voltage, the OTP memory cells comprising bit lines arrayed in rows and columns; data input circuits respectively connected to the rows of the OTP memory cells and configured to select a... Magnachip Semiconductor Ltd

Power switch circuit

Provided is a power switch circuit that includes a first level shifter that, in response to execution of a programming operation of a one-time programmable (OTP) memory cell array, turns on a first switching device that has received a supply voltage from an external supply voltage pad. The power switch... Magnachip Semiconductor Ltd

One-time programmable memory device

Provided is a one-time programmable (OTP) memory device, which includes a data input circuit that receives a supply voltage and applies the supply voltage to one of a plurality of bit lines that is selected by a write switch, and an OTP memory cell array including a plurality of OTP... Magnachip Semiconductor Ltd

Method of manufacturing a cmos transistor

A CMOS transistor manufacturing method includes: forming a gate insulating film on a semiconductor substrate; forming a first gate electrode pattern on the gate insulating film in an NMOS transistor area; forming a second gate electrode pattern on the gate insulating film in a PMOS transistor area; forming a first... Magnachip Semiconductor Ltd

Display driver semiconductor device and manufacturing method thereof

A display driver semiconductor device includes a high voltage well region being formed on a substrate, a first semiconductor device, a second semiconductor device, and a third semiconductor device. The first semiconductor device is formed on the high voltage well region and includes a first gate insulating layer. The second... Magnachip Semiconductor Ltd

Semiconductor device for display driver ic structure

A semiconductor device includes a first transistor, a second transistor, and a third transistor. The first transistor includes a first gate insulator, a first source region and a first drain region, a pair of lightly doped drain (LDD) regions that are each shallower than the first source region and the... Magnachip Semiconductor Ltd

One time programmable (otp) cell and an otp memory array using the same

An anti-fuse device includes a gate insulating film formed on a semiconductor substrate, a gate electrode formed on the gate insulating film, and a salicide layer formed on a first portion of the gate electrode such that a second portion of the gate electrode omits the salicide layer, wherein a... Magnachip Semiconductor Ltd

Wafer-level chip-scale package including power semiconductor and manufacturing method thereof

A wafer-level chip-scale package includes: a power semiconductor comprising a first semiconductor device formed on a semiconductor substrate, and a second semiconductor device formed on the semiconductor substrate; a common drain electrode connected to the first semiconductor device and the second semiconductor device; a first source metal bump formed on... Magnachip Semiconductor Ltd

Multi-channel led driver with overheating protection capabilities

An apparatus to drive a multi-channel light emitting diode (LED) array includes switching transistors connected to LED strings of the multi-channel LED array, error amplifiers connected to the switching transistors, each of the error amplifiers being configured to control current flowing through the LED string to have a target magnitude,... Magnachip Semiconductor Ltd

Switched column driver of display device

A column driver of a display device provides a high slew rate with lowered power requirements by using external switches connected to upper and bottom output buffers. The upper output buffer is driven between a first voltage rail and a second voltage rail, and outputs a first output signal in... Magnachip Semiconductor Ltd

Integrated semiconductor device and manufacturing the same

A semiconductor device includes a substrate including a first region and a second region, a first transistor and a second transistor formed in the first region and second region, respectively, wherein the first transistor includes a thick gate insulating layer and a thin buffer insulating layer formed in the substrate,... Magnachip Semiconductor Ltd

Semiconductor device in a level shifter with electrostatic discharge (esd) protection circuit and semiconductor chip

The present disclosure relates to a semiconductor chip having a level shifter with electro-static discharge (ESD) protection circuit and device applied to multiple power supply lines with high and low power input to protect the level shifter from the static ESD stress. More particularly, the present disclosure relates to a... Magnachip Semiconductor Ltd

Power semiconductor module and manufacturing the same

A power semiconductor module includes: a substrate including first, second, and third metal patterns separated from each other, a semiconductor element located on the substrate, a lead frame located on the substrate and including first, second, third, and fourth bodies; a first terminal connected to the first body, a second... Magnachip Semiconductor Ltd

Low-cost semiconductor device manufacturing method

Provided are a low-cost semiconductor device manufacturing method and a semiconductor device made using the method. The method includes forming multiple body regions in a semiconductor substrate, forming multiple gate insulating layers and multiple gate electrodes in the body region; implementing a blanket ion implantation in an entire surface of... Magnachip Semiconductor Ltd

Semiconductor device

The present examples relate to a semiconductor device used in an electric device or high voltage device. The present examples improve Rsp by minimizing drift region resistance by satisfying breakdown voltage by improving the structure of a drift region through which current flows in a semiconductor device to provide optimal... Magnachip Semiconductor Ltd

Power semiconductor device

The present examples relate to a power semiconductor device. The present examples also relate to a power semiconductor device that maintains a breakdown voltage and reduces a gate capacitance through improving the structure of an Injection Enhanced Gate Transistor (IEGT), and thereby reduces strength of an electric field compared to... Magnachip Semiconductor Ltd

Single poly non-volatile memory device, manufacturing the same and single poly non-volatile memory device array

A single poly non-volatile memory device that includes: a first type lower well; first and second wells separately formed in an upper portion of the first type lower well; a source electrode, a selection transistor, a sensing transistor, and a drain electrode sequentially disposed in an upper portion of the... Magnachip Semiconductor Ltd

Low voltage trench metal oxide semiconductor field effect transistor

A semiconductor device includes a substrate and a source metal formed on the substrate. A gate pad is formed on the substrate adjacent to the source metal. A gate metal is formed on the substrate and surrounds the gate pad and the source metal. A first diode is formed between... Magnachip Semiconductor Ltd

Method for fabricating of cell pitch reduced semiconductor device and semiconductor device

A method for fabricating a semiconductor device is disclosed. A plurality of trenches is formed at a predetermined cell pitch in an upper surface portion of a substrate. A first insulation film is formed on the substrate. A gate electrode is formed within each trench, wherein the gate electrode partially... Magnachip Semiconductor Ltd

One time programmable non-volatile memory device

A one-time programmable non-volatile memory device includes a first conductivity type well region located in a semiconductor substrate, a selection gate electrode and a floating gate electrode located on the substrate, a first doped region located between the selection gate electrode and the floating gate electrode, a second conductivity type... Magnachip Semiconductor Ltd

Method of sensing sliding by hall sensor and sensing system using the same

A method of sensing a sliding by a sensor including grouping one or more Hall elements into one or more groups, measuring magnetic field strength generated by a magnetic field source, and comparing the magnetic field strength at the one or more Hall elements to determine whether a horizontal sliding... Magnachip Semiconductor Ltd

Semiconductor package

Provided is a semiconductor package. The semiconductor package includes: a first die that is a monolithic type die, a driver circuit and a low-side output power device formed in the first die; a second die disposed above the first die, the second die comprising a high-side output power device; and... Magnachip Semiconductor Ltd

Capacitive humidity sensor

Provided is a capacitive humidity sensor. The capacitive humidity sensor includes an upper electrode disposed on a first plane, a plurality of first electrodes included in the upper electrode, a plurality of second electrodes disposed between the first electrodes, and a humidity sensitive layer surrounding the second electrodes.... Magnachip Semiconductor Ltd

Semiconductor device and manufacturing the same

A semiconductor device and a method for manufacturing the same are provided. The semiconductor device includes a well region, a drain region and a source region disposed in the well region, a gate electrode disposed above the well region, a thin gate insulating layer and a thick gate insulating layer... Magnachip Semiconductor Ltd

Power mosfet and manufacturing the same

A power MOSFET includes an insulating layer, a first conductivity type doping layer situated on a bottom of the insulating layer, a second conductivity type body situated on a bottom of the first conductivity type doping layer, a gate electrode adjacent to the bottom of the insulating layer and covered... Magnachip Semiconductor Ltd

Complementary metal-oxide-semiconductor (cmos) inverter circuit device

There is provided a CMOS inverter circuit device. The CMOS inverter circuit device includes a delay circuit unit configured to generate different charge and discharge paths of each gate node of a PMOS transistor and an NMOS transistor respectively at the time that an input signal transitions between high and... Magnachip Semiconductor Ltd

Semiconductor and fabricating the same

Provided is a semiconductor and method of manufacturing the same, and a method of forming even doping concentration of respective semiconductor device when manufacturing multiple semiconductor devices. When a concentration balance is disrupted due to an increase in doping region size, doping concentration is still controllable in example by using... Magnachip Semiconductor Ltd

Power semiconductor device

A power semiconductor device includes a semiconductor substrate, trench structures comprising a first, a second, a third and a fourth trench structure formed in the substrate, a second conductivity type body region formed between the trench structures, a first conductivity type source region formed in the second conductivity type body... Magnachip Semiconductor Ltd

Method and apparatus of correcting output value of geomagnetic sensor

A method of correcting an output value of a geomagnetic sensor that recursively calculates a state estimate, an estimate gain vector, and an estimate error co-variance based on the output value of the geomagnetic sensor that is acquired sequentially and corrects the output value of the geomagnetic sensor based on... Magnachip Semiconductor Ltd

03/02/17 / #20170059324

Method for calculating the angle of inclination of magnetic field in a sensor coordination system

A method for calculating an angle of inclination of a magnetic field in a sensor coordination system includes measuring a magnetic field vector using a magnetometer, measuring an acceleration vector using an accelerometer, determining whether the sensor coordination system is in a moving state or a stationary state using the... Magnachip Semiconductor Ltd

01/26/17 / #20170026042

Level shifting circuit and the same

A level shifting circuit includes a transistor output unit that receives a first power supply signal and convert the first power supply signal to a second power supply signal having a different level from the first power supply signal and a current provision unit that provides a current to an... Magnachip Semiconductor Ltd

01/26/17 / #20170027031

Trigger circuit, light apparatus comprising the same and trigger method

A trigger circuit includes an off-time controller configured to receive a sensing voltage by sensing a driving current and to compare the sensing voltage to first and second certain voltages that are close to a zero voltage value and symmetrical to the zero voltage value to control a turn-off time... Magnachip Semiconductor Ltd








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