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Maxpower Semiconductor Inc patents


Recent patent applications related to Maxpower Semiconductor Inc. Maxpower Semiconductor Inc is listed as an Agent/Assignee. Note: Maxpower Semiconductor Inc may have other listings under different names/spellings. We're not affiliated with Maxpower Semiconductor Inc, we're just tracking patents.

ARCHIVE: New 2018 2017 2016 2015 2014 2013 2012 2011 2010 2009 | Company Directory "M" | Maxpower Semiconductor Inc-related inventors


Trench transistors and methods with low-voltage-drop shunt to body diode

Methods and systems for power semiconductor devices integrating multiple trench transistors on a single chip. Multiple power transistors (or active regions) are paralleled, but one transistor has a lower threshold voltage. ... Maxpower Semiconductor Inc

Power device having a polysilicon-filled trench with a tapered oxide thickness

In one embodiment, a power mosfet vertically conducts current. A bottom electrode may be connected to a positive voltage, and a top electrode may be connected to a low voltage, such as a load connected to ground. ... Maxpower Semiconductor Inc

Power semiconductor devices, methods, and structures with embedded dielectric layers containing permanent charges

Power devices using refilled trenches with permanent charge at or near their sidewalls. These trenches extend vertically into a drift region.. ... Maxpower Semiconductor Inc

Power mosfet having planar channel, vertical current path, and top drain electrode

In one embodiment, a power mosfet cell includes an n+ silicon substrate having a drain electrode. An n-type drift layer is grown over the substrate. ... Maxpower Semiconductor Inc

Vertical power transistor with deep trenches and deep regions surrounding cell array

Various improvements in vertical transistors, such as igbts, are disclosed. The improvements include forming periodic highly-doped p-type emitter dots in the top surface region of a growth substrate, followed by growing the various transistor layers, followed by grounding down the bottom surface of the substrate, followed by a wet etch of the bottom surface to expose the heavily doped p+ layer. ... Maxpower Semiconductor Inc

Vertical power transistor with termination area having doped trenches with variable pitches

Various improvements in vertical transistors, such as igbts, are disclosed. The improvements include forming periodic highly-doped p-type emitter dots in the top surface region of a growth substrate, followed by growing the various transistor layers, followed by grounding down the bottom surface of the substrate, followed by a wet etch of the bottom surface to expose the heavily doped p+ layer. ... Maxpower Semiconductor Inc

Vertical power transistor die with etched beveled edges for increasing breakdown voltage

Various improvements in vertical transistors, such as igbts, are disclosed. The improvements include forming periodic highly-doped p-type emitter dots in the top surface region of a growth substrate, followed by growing the various transistor layers, followed by grounding down the bottom surface of the substrate, followed by a wet etch of the bottom surface to expose the heavily doped p+ layer. ... Maxpower Semiconductor Inc

Vertical power transistor with dual buffer regions

Various improvements in vertical transistors, such as igbts, are disclosed. The improvements include forming periodic highly-doped p-type emitter dots in the top surface region of a growth substrate, followed by growing the various transistor layers, followed by grounding down the bottom surface of the substrate, followed by a wet etch of the bottom surface to expose the heavily doped p+ layer. ... Maxpower Semiconductor Inc

Vertical power transistor with deep floating termination regions

Various improvements in vertical transistors, such as igbts, are disclosed. The improvements include forming periodic highly-doped p-type emitter dots in the top surface region of a growth substrate, followed by growing the various transistor layers, followed by grounding down the bottom surface of the substrate, followed by a wet etch of the bottom surface to expose the heavily doped p+ layer. ... Maxpower Semiconductor Inc

Vertical power transistor with thin bottom emitter layer and dopants implanted in trenches in shield area and termination rings

Various improvements in vertical transistors, such as igbts, are disclosed. The improvements include forming periodic highly-doped p-type emitter dots in the top surface region of a growth substrate, followed by growing the various transistor layers, followed by grounding down the bottom surface of the substrate, followed by a wet etch of the bottom surface to expose the heavily doped p+ layer. ... Maxpower Semiconductor Inc

Lateral power mosfet with non-horizontal resurf structure

In one embodiment, a resurf structure between a source and a drain in a lateral mosfet is formed in a trench having a flat bottom surface and angled sidewalls toward the source. Alternating p and n-type layers are epitaxially grown in the trench, and their charges balanced to achieve a high breakdown voltage. ... Maxpower Semiconductor Inc

Power device having a polysilicon-filled trench with a tapered oxide thickness

In one embodiment, a power mosfet vertically conducts current. A bottom electrode may be connected to a positive voltage, and a top electrode may be connected to a low voltage, such as a load connected to ground. ... Maxpower Semiconductor Inc

Semiconductor device and method for manufacturing the same

A semiconductor device according to the present invention includes a semiconductor layer having a trench, a first insulating film formed along an inner surface of the trench, and an upper electrode and a lower electrode embedded in the trench via the first insulating film and disposed above and below a second insulating film. An electric field relaxation portion that relaxes an electric field arising between the upper electrode and the semiconductor layer is provided between a side surface of the trench and a lower end portion of the upper electrode.. ... Maxpower Semiconductor Inc








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