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Newport Fab Llc Dba Jazz Semiconductor
Newport Fab Llc Dba Jazz Semiconductor Inc
  

Newport Fab Llc Dba Jazz Semiconductor patents

Recent patent applications related to Newport Fab Llc Dba Jazz Semiconductor. Newport Fab Llc Dba Jazz Semiconductor is listed as an Agent/Assignee. Note: Newport Fab Llc Dba Jazz Semiconductor may have other listings under different names/spellings. We're not affiliated with Newport Fab Llc Dba Jazz Semiconductor, we're just tracking patents.

ARCHIVE: New 2017 2016 2015 2014 2013 2012 2011 2010 2009 | Company Directory "N" | Newport Fab Llc Dba Jazz Semiconductor-related inventors




Date Newport Fab Llc Dba Jazz Semiconductor patents (updated weekly) - BOOKMARK this page
12/22/16Integration of active devices with passive components and mems devices
11/24/16Semiconductor device having reduced drain-to-source capacitance
10/06/16Integration of active devices with passive components and mems devices
04/28/16Structure having isolated deep substrate vias with decreased pitch and increased aspect ratio and related method
03/10/16Light sensor with chemically resistant and robust reflector stack
03/10/16Structure and reducing substrate parasitics in semiconductor on insulator technology
02/18/16Thinned processed wafer having devices and vias and related method
12/24/15Scalable self-supported mems structure and related method
12/24/15Robust mems structure with via cap and related method
11/26/15Deep trench isolation structure and improved product yield
10/22/15Low-cost complementary bicmos integration scheme
10/22/15Efficient fabrication of bicmos devices
10/22/15Bicmos integration using a shared sige layer
10/22/15Bicmos integration with reduced masking steps
06/11/15Mems device with sealed cavity and fabricating same
06/11/15Mems device with sealed cavity and release chamber and related double release method
12/25/14Selective amorphization for signal isolation and linearity
12/18/14Soi structure for signal isolation and linearity
09/18/14Heterojunction bipolar transistor having a germanium raised extrinsic base
09/18/14Heterojunction bipolar transistor having a germanium extrinsic base utilizing a sacrificial emitter post
09/11/14Integrated passive device having improved linearity and isolation
09/11/14Anchor vias for improved backside metal adhesion to semiconductor substrate
03/06/14Rf switch branch having improved linearity
02/27/14Isolated through silicon vias in rf technologies
11/28/13Isolated through silicon via and isolated deep silicon via having total or partial isolation
10/03/13Semiconductor fabrication utilizing grating and trim masks
07/18/13Selective amorphization for electrical signal isolation and linearity in soi structures
07/18/13Soi structure and utilizing trenches for signal isolation and linearity
07/18/13Electrical signal isolation and linearity in soi structures
05/02/13Method for forming deep silicon via for grounding of circuits and devices, emitter ballasting and isolation
04/11/13Through silicon via structure, formation, and integration in semiconductor substrate
10/25/12Method for encapsulating microelectronic devices
01/27/11Deep silicon via for grounding of circuits and devices, emitter ballasting and isolation
05/27/10Mos transistor with a reduced on-resistance and area product
12/03/09Fabricating a top conductive layer in a semiconductor die
10/01/09Densely packed metal segments patterned in a semiconductor die
08/13/09Method for integrating sige npn and vertical pnp devices
06/11/09Semiconductor on insulator (soi) structure and fabrication
06/11/09Semiconductor on insulator (soi) switching circuit
05/21/09Self-planarized passivation dielectric for liquid crystal on silicon structure and related method
05/21/09Integration of an npn device with phosphorus emitter and controlled emitter-base junction depth in a bicmos process
04/02/09Method for integrating high voltage and high speed bipolar transistors on a substrate and related structure
03/12/09Mim capacitor high-k dielectric for increased capacitance density
12/29/16Semiconductor wafer backside metallization with improved backside metal adhesion
12/15/16High power rf switches using multiple optimized transistors







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