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Newport Fab Llc Dba Jazz Semiconductor
Newport Fab Llc Dba Jazz Semiconductor Inc

Newport Fab Llc Dba Jazz Semiconductor patents


Recent patent applications related to Newport Fab Llc Dba Jazz Semiconductor. Newport Fab Llc Dba Jazz Semiconductor is listed as an Agent/Assignee. Note: Newport Fab Llc Dba Jazz Semiconductor may have other listings under different names/spellings. We're not affiliated with Newport Fab Llc Dba Jazz Semiconductor, we're just tracking patents.

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Reduced substrate effects in monolithically integrated rf circuits

A method of forming a semiconductor structure is disclosed. The method includes forming a semiconductor wafer having a device layer situated over a handle substrate, the device layer having at least one semiconductor device, forming a front side glass on a front side of the semiconductor wafer, and partially removing... Newport Fab Llc Dba Jazz Semiconductor

Integration of thermally conductive but electrically isolating layers with semiconductor devices

A semiconductor structure includes a semiconductor wafer having at least one semiconductor device integrated in a first device layer, a thermally conductive but electrically isolating layer on a back side of the semiconductor wafer, a front side glass on a front side of the semiconductor wafer, where the thermally conductive... Newport Fab Llc Dba Jazz Semiconductor

Thermally conductive and electrically isolating layers in semiconductor structures

A semiconductor structure includes a semiconductor wafer having at least one semiconductor device integrated in a first device layer, a thermally conductive but electrically isolating layer on a back side of the semiconductor wafer, a front side glass on a front side of the semiconductor wafer, where the thermally conductive... Newport Fab Llc Dba Jazz Semiconductor

Structure and mitigating substrate parasitics in bulk high resistivity substrate technology

A structure includes a field isolation region in a high resistivity substrate, a compensation implant region under the field isolation region in the high resistivity substrate, where the compensation implant region is configured to substantially eliminate a parasitic p-n junction under the field isolation region. The parasitic p-n junction is... Newport Fab Llc Dba Jazz Semiconductor

Structure having isolated deep substrate vias with decreased pitch and increased aspect ratio and related method

A structure having isolated deep substrate vias with decreased pitch and increased aspect ratio is disclosed. The structure includes a device layer over a buried oxide layer, a deep trench extending through the device layer, a dielectric filler in the deep trench, via holes in the dielectric filler, and conductive... Newport Fab Llc Dba Jazz Semiconductor

Nickel silicide implementation for silicon-on-insulator (soi) radio frequency (rf) switch technology

A radio frequency (RF) switch includes a plurality of series-connected silicon-on-insulator (SOI) CMOS transistors fabricated using a 0.13 micron (or larger) process, wherein the SOI CMOS transistors include nickel silicide formed on the source/drain regions. Each of the series-connected SOI CMOS transistors has a gate length of about 0.13 microns... Newport Fab Llc Dba Jazz Semiconductor








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