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Osram Opto Semiconductors Gmbh
Osram Opto Semiconductors
Osram Opto Semiconductors Gmbh A Corporation Of Germany
Osram Opto Semiconductors Gmbh A Germany Corporation
Osram Opto Semiconductors Gmbh_20100107
Osram Opto Semiconductors Gmbh_20100128
Osram Opto Semiconductors Smbh
Osram Opto Semiconductors Gmbh_20131212
Osram Opto Semiconductors Gmbh_20100121

Osram Opto Semiconductors patents


Recent patent applications related to Osram Opto Semiconductors. Osram Opto Semiconductors is listed as an Agent/Assignee. Note: Osram Opto Semiconductors may have other listings under different names/spellings. We're not affiliated with Osram Opto Semiconductors, we're just tracking patents.

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Optoelectronic semiconductor device, method of producing an electrical contact and method of producing a semiconductor device

An optoelectronic semiconductor device includes a semiconductor body having a semiconductor region and an active region, wherein the semiconductor region has a covering layer forming a radiation passage surface of the semiconductor body on a side facing away from the active region, the semiconductor region has a current-spreading layer arranged between the covering layer and the active region; the semiconductor device has a contact for the electrical contacting of the semiconductor region; the contact adjoins the current-spreading layer in a terminal area; the contact adjoins the covering layer in a barrier region; and the barrier region runs parallel to the active region and is arranged closer to the active region than the radiation passage surface.. . ... Osram Opto Semiconductors

Radiation-emitting semiconductor component and production method of a plurality of semiconductor components

A radiation-emitting semiconductor component and a method for producing a plurality of semiconductor components are disclosed. In an embodiment the component includes a semiconductor chip comprising a semiconductor layer sequence, a front side and a rear side opposite the front side, and a molded body molded on to the semiconductor chip at least in some places. ... Osram Opto Semiconductors

Method of producing optoelectronic components and surface-mounted optoelectronic component

A method of producing optoelectronic components includes a) providing a carrier and optoelectronic semiconductor chips including contact elements arranged on a contact side of the semiconductor chip; b) applying the semiconductor chips laterally next to one another on to the carrier, wherein the contact sides face the carrier during application; c) applying an electrically-conductive layer at least on to subregions of the sides of the semiconductor chip not covered by the carrier; d) applying a protective layer at least on to subregions of side surfaces of the semiconductor chips running transversely to the contact surface; e) electrophoretically depositing a converter layer on to the electrically-conductive layer, wherein the converter layer is configured to convert at least part of radiation emitted by the semiconductor chip into radiation of a different wavelength range; and f) removing the electrically-conductive layer from regions between the converter layer and the semiconductor chips.. . ... Osram Opto Semiconductors

Device and method for producing a device

A device and a method for producing a device are disclosed. In an embodiment the device includes a carrier and a semiconductor body arranged in a vertical direction on the carrier. ... Osram Opto Semiconductors

Method for dividing a composite into semiconductor chips, and semiconductor chip

The invention relates to a method for dividing a composite into a plurality of semiconductor chips along a dividing pattern. A composite, which comprises a substrate, a semiconductor layer sequence, and a functional layer, is provided. ... Osram Opto Semiconductors

Optoelectronic semiconductor chip

An optoelectronic semiconductor chip is disclosed. In an embodiment the chip includes at least one n-doped semiconductor layer, at least one p-doped semiconductor layer and an active layer arranged between the at least one n-doped semiconductor layer and the at least one p-doped semiconductor layer, wherein the p-doped semiconductor layer is electrically contacted by a p-type connection contact, wherein a first trench extending at least partially into the p-doped semiconductor layer is arranged below the p-type connection contact, wherein an electrically insulating first blocking element arranged at least partially below the p-type connection contact and at least partially within the trench is arranged at least between the n-doped semiconductor layer and the p-type connection contact, and wherein the electrically insulating first blocking element is configured to prevent a direct current flow between the p-type connection contact and the p-doped and n-doped semiconductor layers and the active layer.. ... Osram Opto Semiconductors

Optoelectronic semiconductor component and method for producing an optoelectronic semiconductor component

The invention relates to an optoelectronic semiconductor component (100) comprising the following —an optoelectronic semiconductor chip (2), the lateral surfaces (2c) and lower face (2b) of which are at least partly covered by a molded body (3) that is electrically conductive and is designed to electrically contact the optoelectronic semiconductor chip (2), —at least one via (6) which comprises an electrically conductive material and is laterally spaced from the semiconductor chip (2), said via (6) completely passing through the molded body (3), wherein the via (6) extends from an upper face (3a) of the molded body (3) to a lower face (3b) of the molded body (3), —at least one insulating element (9) which is arranged within the molded body (3) between the via (6) and the semiconductor chip (2) and extends from the upper face (3a) of the molded body (3) to the lower face (3b) of the molded body (3), and —an electrically conductive connection (7) which is connected to the semiconductor chip (2) and the via (6) in an electrically conductive manner.. . ... Osram Opto Semiconductors

Sensor for sensing a biometric function

A sensor that senses a biometric function includes at least one transmitter configured to transmit electromagnetic radiation in an emission direction, including at least one receiver configured to receive electromagnetic radiation in a receiving direction, wherein the transmitter and the receiver are configured such that the emission direction of the transmitter is inclined away from the receiving direction of the receiver by a defined angle, wherein the angle is 1° to 60°.. . ... Osram Opto Semiconductors

Optoelectronic semiconductor chip, optoelectronic semiconductor component and method for producing an optoelectronic semiconductor chip

An optoelectronic semiconductor chip, an optoelectronic semiconductor component and a method for producing an optoelectronic semiconductor chip are disclosed. In an embodiment the chip includes a main body including a carrier having a top, a bottom opposite the top and side faces connecting the bottom with the top and a semiconductor layer sequence arranged on the top of the carrier, wherein the semiconductor layer sequence is configured to emit or absorb electromagnetic radiation and two contact faces arranged on the semiconductor layer sequence. ... Osram Opto Semiconductors

Optoelectronic component and method of producing an optoelectronic component

An optoelectronic component includes a carrier, wherein a first optoelectronic semiconductor chip and a second optoelectronic semiconductor chip are arranged above a top side of the carrier, the optoelectronic semiconductor chips each include a top side, an underside situated opposite the top side, and side faces extending between the top side and the underside, the undersides of the optoelectronic semiconductor chips face the top side of the carrier, a first potting material is arranged above the top side of the carrier, the first potting material covering parts of the side faces of the first optoelectronic semiconductor chip, and a second potting material is arranged above the top side of the carrier, and the second potting material covering the first potting material.. . ... Osram Opto Semiconductors

Arrangement for spatially limiting a reservoir for a marker material

An arrangement includes a confining layer, a metallization layer and a semiconductor component, wherein the metallization layer is arranged on the semiconductor component, and the confining layer is arranged on the metallization layer, the confining layer spatially establishes a reservoir for the marker material at least partially in a defined manner, the confining layer and the metallization layer include an identical material, and the marker material is arranged in the reservoir of the arrangement.. . ... Osram Opto Semiconductors

Optisch wirksames element, verfahren zur herstellung eines optisch wirksamen elements und optoelektronisches bauelement

An optically effective element includes a carrier, a first optically effective structure arranged on a top side of the carrier, and a cover arranged above the first optically effective structure. A method of producing an optically effective element includes providing a carrier, forming a first optically effective structure on a top side of the carrier, and arranging a cover above the top side of the carrier and the first optically effective structure.. ... Osram Opto Semiconductors

Optoelectronic device with a mixture having a silicone and a fluoro-organic additive

An optoelectronic device with a mixture including silicone and a fluoro-organic additive is disclosed. In an embodiment the device includes at least one radiation-emitting or radiation-detecting semiconductor and a mixture including silicone and a fluoro-organic additive. ... Osram Opto Semiconductors

Optoelectronic lamp device

An optoelectronic lamp device, including a carrier having a planar mounting face, at least one laser diode that emits laser radiation, wherein the laser diode has a fast axis and a slow axis, the laser diode is arranged on the mounting face such that the fast axis is formed extending parallel to the mounting face, a first collimator is provided for collimating laser radiation polarized in the direction of the fast axis, and a second collimator is provided for collimating laser radiation polarized in the direction of the slow axis, wherein, in the beam path of the laser radiation emitted by the laser diode, the first collimator is arranged proximally and the second collimator is arranged distally relative to the laser diode so that the laser radiation polarized in the direction of the fast axis can be collimated first, and only then can the laser radiation polarized in the direction of the slow axis be collimated.. . ... Osram Opto Semiconductors

04/05/18 / #20180097156

Optoelectronic lighting device and method for the production of an optoelectronic lighting device

An optoelectronic lighting device and a method for manufacturing an optoelectronic lighting device are disclosed. In an embodiment the device includes a carrier and a light-emitting diode arranged on the carrier having a light-emitting surface. ... Osram Opto Semiconductors

04/05/18 / #20180097154

Led emitter and method for manufacturing the same

In various embodiments, a light emitting component is provided. The light emitting component includes a plurality of light emitting semiconductor chips. ... Osram Opto Semiconductors

04/05/18 / #20180097146

Radiation-emitting semiconductor device

The invention describes a radiation-emitting semiconductor component (100) having a first semiconductor layer sequence (10) which is designed to generate radiation of a first wavelength, a second semiconductor layer sequence (20), a first electrode area (1) and a second electrode area (2). It is provided that the second semiconductor layer sequence (20) has a quantum pot structure (21) with a quantum layer structure (22) and a barrier layer structure (23) and is designed to generate incoherent radiation of a second wavelength by means of absorption of the radiation of the first wavelength, and an electric field can be generated in the second semiconductor layer sequence (20) by the first electrode area (1) and the second electrode area (2).. ... Osram Opto Semiconductors

04/05/18 / #20180096861

Method of machining a lead frame, and lead frame

A method of processing a lead frame having at least one electrically conductive contact section includes forming a depression in the at least one electrically conductive contact section so that a first electrically conductive contact subsection and a second electrically conductive contact subsection are formed, which are delimited from one another by the depression, and forming a housing made of a housing material, which housing includes a housing frame that at least partially embeds the lead frame, formation of the housing including introduction of housing material into the depression so that a housing frame section formed by the housing material introduced into the depression is formed between the first and second electrically conductive contact subsections to mechanically stabilize the first and second electrical conductive contact subsections by the housing frame section.. . ... Osram Opto Semiconductors

03/29/18 / #20180090908

Arrangement having a substrate and a semiconductor laser

An arrangement having a substrate and a semiconductor laser and a method for manufacturing such an arrangement are disclosed. In an embodiment, the arrangement includes a substrate and a semiconductor laser, wherein the substrate has a top, side areas and a bottom, wherein at least one first recess is provided at the top, wherein the semiconductor laser is arranged on the top of the substrate such that a region of the side area of the semiconductor laser via which the electromagnetic radiation is emitted is arranged above the first recess.. ... Osram Opto Semiconductors

03/29/18 / #20180090652

Optoelectronic device array and method for producing a multiplicity of optoelectronic device arrays

The invention relates to an optoelectronic component array (100) with a plurality of adjacent optoelectronic semiconductor components (60) and a covering body (81). According to the invention—each of the optoelectronic semiconductor components (60) has a ceramic support element (19) and a semiconductor chip (50) which is arranged on an upper face of the ceramic support element and which comprises a semiconductor element (54) designed to generate and/or receive radiation—the covering body (81) surrounds each of the ceramic support elements (19) of the optoelectronic semiconductor components in some regions at least in a lateral direction and connects adjacent ceramic support elements (19) together, and—the lower face of each of the ceramic support elements (19) is electrically insulated from the semiconductor chip (50).. ... Osram Opto Semiconductors

03/29/18 / #20180090540

Method for producing a light-emitting diode display and light-emitting diode display

In at least one embodiment, the method is designed for producing a light-emitting diode display (1). The method comprises the following steps: •a) providing a growth substrate (2); •b) applying a buffer layer (4) directly or indirectly onto a substrate surface (20); •c) producing a plurality of separate growth points (45) on or at the buffer layer (4); •d) producing individual radiation-active islands (5), originating from the growth points (45), wherein the islands (5) each comprise an inorganic semiconductor layer sequence (50) with at least one active zone (55) and have a mean diameter, when viewed from above onto the substrate surface (20), between 50 nm and 20 μm inclusive; and •e) connecting the islands (5) to transistors (6) for electrically controlling the islands (5).. ... Osram Opto Semiconductors

03/29/18 / #20180088215

Measuring system, use of at least one individually operable led lighting unit as a sender unit in a measuring system, method for operating a measuring system and lighting source having a measuring system

Provided is a measuring system (1), which comprises a sender unit (10) with at least one individually operable led lighting unit (12) with a luminous area which has a characteristic longitudinal extent (107) of less than or equal to 100 μm and/or a surface area of less than or equal to 104 μm2, wherein the led lighting unit (12) is configured to emit at least one light pulse as a sender signal (11) during operation, and comprises the one receiver unit (20) with at least one detector unit (22) for receiving a return signal (21), which comprises at least a part of the sender signal (11) reflected by an external object. Furthermore, use of at least one individually operable led lighting unit as a sender unit in a measuring system, a method for operating a measuring system and a lighting source having a measuring system are provided.. ... Osram Opto Semiconductors

03/29/18 / #20180087146

Method for producing a coating and optoelectronic semiconductor component having a coating

What is specified is a method for producing a coating comprising the following steps: —providing a material source having a top surface and a main coating direction, —providing a substrate holder having a top surface, —providing at least one base layer, having a coating surface remote from the substrate holder, on the top surface of the substrate, —attaching the substrate holder to a rotating arm, which has a length along a main direction of extent of the rotating arm, —setting the length of the rotating arm in such a manner that a normal angle (φ) throughout the method is at least 30° and at most 75°, —applying at least one coating to that side of the base layer which has the coating surface by means of the material source, wherein—during the coating process with the coating, the substrate holder is rotated about a substrate axis of rotation running along the main direction of extent of the rotating arm.. . ... Osram Opto Semiconductors

03/22/18 / #20180083415

Laser diode

A laser diode has a layer arrangement including a first layer structure extending along a z axis in a longitudinal direction, along an x axis in a transverse direction and along a y axis in a height direction, and a second and third layer structure arranged along the z axis on opposite longitudinal sides of the first layer structure and adjoining the first layer structure, wherein the active zone of the first layer structure is arranged offset in height relative to the active zones of the second and third layer structures, and an intermediate layer is arranged laterally with respect to the first layer structure in the second and third layer structures, the intermediate layer configured as an electrically blocking layer that hinders or prevents a current flow, and the intermediate layer being arranged between the active zone and an n contact.. . ... Osram Opto Semiconductors

03/22/18 / #20180083160

Component having a multiple quantum well structure

The invention relates to a component (10) having a semiconductor layer sequence, which has a p-conducting semiconductor layer (1), an n-conducting semiconductor layer (2), and an active zone (3) arranged between the p-conducting semiconductor layer and the n-conducting semiconductor layer, wherein the active zone has a multiple quantum well structure, which, from the p-conducting semiconductor layer to the n-conducting semiconductor layer, has a plurality of p-side barrier layers (32p) having intermediate quantum well layers (31) and a plurality of n-side barrier layers (32n) having intermediate quantum layers (31). Recesses (4) having flanks are formed in the semiconductor layer sequence on the part of the p-conducting semiconductor layer, wherein the quantum well layers and/or the n- and p-side barrier layers extend in a manner conforming to the flanks of the recesses at least in regions. ... Osram Opto Semiconductors

03/22/18 / #20180083063

Optoelectronic semiconductor component

An optoelectronic semiconductor component includes a first functional region having an active zone provided for generating radiation or for receiving radiation, and a second functional region, which is suitable for contributing to the driving of the first functional region. The first functional region and the second functional region are integrated on the same carrier substrate.. ... Osram Opto Semiconductors

03/22/18 / #20180082899

Method of removing a growth substrate from a layer sequence

A method of detaching a growth substrate from a layer sequence includes introducing at least one wafer composite into an etching bath containing an etching solution such that the etching solution is located at least in regions within separating trenches, repeatedly varying a pressure of a base pressure prevailing in the etching bath with at least one pressure variation device, and detaching the growth substrate, wherein at least one of 1-3 is satisfied: 1) a buffer chamber attached to the etching bath and connected thereto is provided and the volume variation is effected by a movement of a piston or hydraulic plunger introduced into the buffer chamber, 2) the volume variation is at least partly effected with a compressor attached to the etching bath, and 3) the pressure variation is at least partly effected by at least one of removal of a gas and a liquid from the etching bath or by addition of at least one of the gas and the liquid thereto.. . ... Osram Opto Semiconductors

03/15/18 / #20180076370

Light-emitting component and method of producing a light-emitting component

A light-emitting component includes a light-emitting chip and a housing including a plastic body and a reflector, the reflector includes an electrically conductive layer, the light-emitting chip includes a top side and an underside, the underside of the light-emitting chip is arranged on the plastic body, an electrical terminal on the top side of the light-emitting chip electrically conductively connects to the reflector by a bond wire, the underside of the light-emitting chip and the reflector are electrically insulated from one another, a conduction region is provided within the plastic body, thermal conductivity of the conduction region is greater than thermal conductivity of the plastic body, the conduction region adjoins the underside of the light-emitting chip, and the conduction region extends from the side of the plastic body facing the light-emitting chip as far as the side of the plastic body facing away from the light-emitting chip.. . ... Osram Opto Semiconductors

03/15/18 / #20180076367

Optoelectronic component and method for the production thereof

An optoelectronic component includes an optoelectronic semiconductor chip at least partly enclosed by a molded body, wherein a front side of the molded body is covered by a reflecting film, at least in some sections, and a section of the reflecting film is enclosed between the optoelectronic semiconductor chip and the molded body.. . ... Osram Opto Semiconductors

03/15/18 / #20180076366

Optoelectronic component

An optoelectronic component includes an optoelectronic semiconductor chip configured to emit electromagnetic radiation including a wavelength from a first spectral range, a wavelength-converting element configured to convert electromagnetic radiation including a wavelength from the first spectral range into electromagnetic radiation including a wavelength from a second spectral range, and a reflective element including a first reflectivity in the first spectral range and a second reflectivity in the second spectral range, wherein the first spectral range is below 1100 nm, and the second spectral range is above 1200 nm.. . ... Osram Opto Semiconductors

03/15/18 / #20180076359

Method for producing a semiconductor body

A method for producing a semiconductor body is disclosed. In an embodiment, the method includes providing a semiconductor body, applying a first mask layer and a second mask layer to the semiconductor body and forming at least one second mask opening in the second mask layer and at least one recess in the semiconductor body in a region of the at least one first mask opening in the first mask layer, wherein the recess comprises a side face and a bottom face and the recess forms an undercut with the second mask opening. ... Osram Opto Semiconductors

03/08/18 / #20180069156

Optoelectronic device and method for the production of an optoelectronic device

The invention relates to an optoelectronic device (1) comprising at least one outer surface (2) containing silicone (20), chemical compounds, comprising an anchor group (3) and a head group (4), being bonded to the silicone via the anchor group, and the adhesion of the regions of the silicone (2) present on the outer surface being reduced owing to the head groups of the chemical compounds. A method for producing an optoelectronic device is also disclosed.. ... Osram Opto Semiconductors

03/08/18 / #20180069147

Method for producing a plurality of semiconductor chips and semiconductor chip

Disclosed is a method for producing a plurality of semiconductor chips (10). A composite (1), which comprises a carrier (4) and a semiconductor layer sequence (2, 3), is provided. ... Osram Opto Semiconductors

03/01/18 / #20180062051

Electromagnetic radiation-emitting assembly

An electromagnetic radiation-emitting assembly is disclosed. In an embodiment the assembly includes an electromagnetic radiation-emitting component arranged above a carrier, the electromagnetic radiation-emitting component including a first side facing away from the carrier, a second side facing the carrier, and at least one side wall connecting the first side and the second side of the electromagnetic radiation-emitting component to one another, an encapsulating body, into which the electromagnetic radiation-emitting component is embedded, which adjoins the first side and the side wall of the electromagnetic radiation-emitting component, a potting material at least partly surrounding the encapsulating body and a reflector body at least partly surrounding the potting material.. ... Osram Opto Semiconductors

03/01/18 / #20180062031

Optoelectronic semiconductor chip

An optoelectronic semiconductor chip is disclosed. In an embodiment the chip includes an active zone with a multi-quantum-well structure, wherein the multi-quantum-well structure comprises multiple quantum-well layers and multiple barrier layers, which are arranged sequentially in an alternating manner along a growth direction, wherein the multi-quantum-well structure has at least one emission region and multiple transport regions which are arranged sequentially in an alternating manner in a direction perpendicular to the growth direction, wherein at least one of the quantum-well layers and the barrier layers are thinner in the transport regions than in the emission regions, and wherein the quantum-well layers in the transport regions and in the emission regions are oriented perpendicularly to the growth direction with exception of a junction region between adjacent transport regions and emission regions.. ... Osram Opto Semiconductors

03/01/18 / #20180062029

Optoelectronic semiconductor body and method for producing an optoelectronic semiconductor body

The invention relates to an optoelectronic semiconductor element (100) comprising a semiconductor layer sequence (1) with a first layer (10) of a first conductivity type, a second layer (12) of a second conductivity type, and an active layer (11) which is arranged between the first layer (10) and the second layer (12) and which absorbs or emits electromagnetic radiation when operated as intended. The semiconductor element (100) is equipped with a plurality of injection regions (2) which are arranged adjacently to one another in a lateral direction, wherein the semiconductor layer sequence (1) is doped within each injection region (2) such that the semiconductor layer sequence (1) has the same conductivity type as the first layer (10) within the entire injection region (2). ... Osram Opto Semiconductors

03/01/18 / #20180062027

Unknown

A method of producing optoelectronic semiconductor components includes a) providing a semiconductor layer sequence on a carrier top of a carrier, b) patterning the semiconductor layer sequence such that at least one mesa structure is formed with side faces, c) applying at least a portion of a cladding to the semiconductor layer sequence with the mesa structure by a conformal coating method such that all free surfaces are covered by the cladding), and d) anisotropically etching the cladding such that a flank coating is created from the cladding, which coating is limited with a tolerance of at most 200% of a mean thickness of the flank coating to the side faces of the mesa structure and completely encloses the mesa structure, wherein step d) takes place without an additional etching mask for the anisotropic etching.. . ... Osram Opto Semiconductors

02/22/18 / #20180053801

Sensor device

A sensor device is disclosed. In an embodiment, the sensor device includes a carrier having a plane carrier surface, a plurality of photodetectors arranged on the carrier surface, each photodetector including a photosensitive sensor area and a lens arrangement arranged opposite the sensor areas, wherein the lens arrangement includes an optical axis, wherein the lens arrangement is configured to image electromagnetic radiation onto the sensor areas, wherein the plurality of photodetectors comprise at least one first photodetector having a first sensor area, the first sensor area comprises at least one property which differs from a property of a second sensor area of a second photodetector of the plurality of photodetectors, and wherein the second photodetector is arranged closer to the optical axis than the at least one first photodetector in order to reduce an optical imaging aberration of the lens arrangement.. ... Osram Opto Semiconductors

02/15/18 / #20180048122

Method of producing an electronic component

A method of producing an electronic component includes providing a surface comprising a first region and a second region adjoining the first region, arranging a sacrificial layer above the first region of the surface, arranging a passivation layer above the sacrificial layer and the second region of the surface, creating an opening in the passivation layer above the first region of the surface, wherein the opening in the passivation layer is created with an opening area that is smaller than the first region, and removing the sacrificial layer and the portions of the passivation layer that are arranged above the first region.. . ... Osram Opto Semiconductors

02/15/18 / #20180048114

Edge-emitting semiconductor laser and method for the production thereof

An edge-emitting semiconductor laser includes a semiconductor structure laterally bounded by first and second facets and having a central section and a first edge section, a layer sequence offset relative to the central section in the growth direction in the first edge section such that, in the first edge section, one of the cladding layers or one of the waveguide layers is arranged in the growth direction at a height of the active layer in the central section, the layer sequence includes an epitaxially grown additional layer arranged between the upper side and the lower cladding layer, the additional layer is not arranged between the upper side and the lower cladding layer in the central section, and the additional layer is electrically insulating or has doping with the opposite sign to the lower cladding layer.. . ... Osram Opto Semiconductors

02/15/18 / #20180047879

Method for producing a multiplicity of conversion elements, conversion element, and optoelectronic device

The invention relates to a method for producing a plurality of conversion elements (6) comprising the following steps: providing a substrate (1); applying a first mask layer (4) to the substrate (1), the first mask layer (4) being structured with through-holes (3) which completely penetrate the first mask layer (4); applying a conversion material (5) at least into the through-holes (3); and singulating the conversion elements (6) so as to produce a plurality of individual conversion elements (6). The invention also relates to two other methods, to a conversion element (6), and to an optoelectronic component.. ... Osram Opto Semiconductors

02/15/18 / #20180047873

Radiation body and method for producing a radiation body

A radiation body and a method for producing a radiation body are disclosed. In an embodiment, the radiation body includes a basic body configured to generate or absorb electromagnetic radiation, at least one main side having a rough structure of first elevations and at least one structured radiation surface structured with a fine structure of second elevations, wherein the fine structure brings about a gradual refractive index change for the radiation between materials adjoining the structured radiation surface, wherein the first elevations comprise heights and widths in each case of at least λmax/n, wherein each second elevation tapers toward a maximum of the respective second elevation and each second elevations has a height of at least 0.6·λmax/n and a width of λmax/(2n) at most in each case, and wherein a distance between neighboring second elevations is λmax/(2n) at most.. ... Osram Opto Semiconductors

02/15/18 / #20180047796

Method for producing an optoelectronic component and an optoelectronic component

An optoelectronic component and a method for producing an optoelectronic component are disclosed. In embodiments, the method includes a) providing an auxiliary carrier; b) applying a sacrificial layer on the auxiliary carrier; c) applying a converter layer on the sacrificial layer, which includes quantum dots embedded in a matrix material or a luminescent polymer; d) providing a semiconductor layer sequence; e) optionally applying an adhesive layer on the semiconductor layer sequence; f) optionally bonding the converter layer on the semiconductor layer sequence by means of an adhesive layer, wherein the semiconductor layer sequence is configured to emit radiation; and g) removing the auxiliary carrier by means of optical, mechanical and/or chemical treatment and at least partially destroying the sacrificial layer.. ... Osram Opto Semiconductors

02/15/18 / #20180047628

Method for singulating an assemblage into semiconductor chips, and semiconductor chip

A method for singulating an assemblage into a plurality of semiconductor chips is specified, wherein an assemblage comprising a carrier, a semiconductor layer sequence and a metallic layer is provided. Separating trenches are formed in the carrier. ... Osram Opto Semiconductors

02/08/18 / #20180040787

Unknown

A light-emitting component includes at least two radiation-emitting semiconductor chips of a first type configured to emit electromagnetic radiation during operation, and a light exit surface at a light exit side of the light-emitting component, wherein each of the radiation-emitting semiconductor chips of the first type includes a semiconductor layer sequence with a stacking direction, the stacking direction of each radiation-emitting semiconductor chip of the first type is parallel to the light exit surface of the component, and all the semiconductor chips of the first type are arranged directly below the light exit surface.. . ... Osram Opto Semiconductors

02/08/18 / #20180040781

Optoelectronic semiconductor component

An optoelectronic semiconductor component comprising a connection carrier with a mounting face and an electrically insulating base member. An optoelectronic semiconductor chip is arranged on the mounting face of the connection carrier. ... Osram Opto Semiconductors

02/08/18 / #20180040772

Optoelectronic semiconductor body and method of producing an optoelectronic semiconductor body

An optoelectronic semiconductor body includes a carrier, a semiconductor layer sequence having a first layer of a first conductivity type, a second layer of a second conductivity type and an active layer, wherein the first layer faces the carrier and the active layer generates or absorbs electromagnetic radiation when operated in its intended operation mode, and at least one through-via extending from the carrier right through the first layer and the active layer and at least partly through the second layer, wherein, when in operation, second charge carriers are injected via the through-via into the second layer, in a region of the active layer and the first layer the through-via is completely surrounded laterally by a continuous and contiguous bed of the active layer and the first layer, the through-via is formed from a semiconductor material, and the carrier is a growth substrate for the semiconductor layer sequence.. . ... Osram Opto Semiconductors

02/08/18 / #20180040512

Method for producing a semiconductor body

A method for producing a semiconductor body is disclosed. In an embodiment the method includes providing a semiconductor body, applying a first mask layer and a second mask layer to the semiconductor body and forming at least one second mask opening in the second mask layer and at least one recess in the semiconductor body in a region of the at least one first mask opening in the first mask layer, wherein the recess comprises a side face and a bottom face and the recess forms an undercut with the second mask opening, when viewed from the first mask opening. ... Osram Opto Semiconductors

02/08/18 / #20180040485

Method for structuring a nitride layer, structured dielectric layer, optoelectronic component, etching method for etching layers, and an environment sensor

The invention relates to a method for structuring a nitride layer (2), comprising the following steps: a) providing a nitride layer (2) formed with silicon nitride of a first type, b) defining regions (40) of said nitride layer (2) to be transformed, and c) inserting the nitride layer (2) into a transformation chamber for the duration of a transformation period, said transformation period being selected such that—at least 80% of the nitride layer (2) regions (40) to be transformed are transformed into oxide regions (41) formed with silicon oxide, and—remaining nitride layer (2) regions (21) remain at least 80% untransformed.. . ... Osram Opto Semiconductors

02/01/18 / #20180033932

Leadframe and chip package comprising a leadframe

A leadframe includes first and second parts separated from each other, and each comprises at least one anchoring hole. The first part comprises a mounting area, the second part comprises an edge line facing the first part which is curved, and the first part comprises first, second and third portions each having a maximum width, wherein the mounting area is arranged at the third portion, and the third portion follows the second portion and the second portion follows the first portion in a direction of a longitudinal extent of the first part such that the third portion faces the second part.. ... Osram Opto Semiconductors

02/01/18 / #20180033931

Optoelectronic semiconductor component

An optoelectronic semiconductor device includes a carrier having a carrier top side, at least one optoelectronic semiconductor chip arranged at the carrier top side and having a radiation main side remote from the carrier top side, at least one bonding wire, at least one covering body on the radiation main side, and at least one reflective potting compound surrounding the semiconductor chip in a lateral direction and extending from the carrier top side at least as far as the radiation main side, wherein the bonding wire is completely covered by the reflective potting compound or completely covered by the reflective potting compound and the covering body, the bonding wire is fixed to the semiconductor chip in an electrical connection region on the radiation main side, and the electrical connection region is free of the covering body and covered partly or completely by the reflective potting compound.. . ... Osram Opto Semiconductors

02/01/18 / #20180033927

Electronic component including a material comprising epoxysilane-modified polyorganosiloxane

The present invention relates to an optoelectronic component comprising a semiconductor (1) and a polyorganosiloxane. The polyorganosiloxane is obtainable by crosslinking a composition comprising a first organosiloxane having at least one terminal vinyl group, a second organosiloxane having at least one silicon-hydrogen bond and an alkoxysilane having at least one epoxy group. ... Osram Opto Semiconductors

02/01/18 / #20180033925

Method of producing a light-emitting device, and light-emitting device

A method of producing a light-emitting device includes providing a carrier having a carrier top face and at least one light-emitting semiconductor chip arranged on the carrier top face, wherein the semiconductor chip has a radiation emission face and is arranged on the carrier top face such that the radiation emission face faces away from the carrier top face; arranging a converter element on the at least one semiconductor chip on its radiation emission face so that the converter element fully covers the radiation emission face of the semiconductor chip and extends laterally beyond the semiconductor chip; covering the converter element with an encapsulant, and compression molding and curing the encapsulant so that the encapsulant covers the converter element on a face facing away from the semiconductor chip, and the converter element and the encapsulant fit closely against the radiation emission face and at least against a side face of the semiconductor chip; and detaching the encapsulant, together with the converter element and the semiconductor chip, from the carrier.. . ... Osram Opto Semiconductors

02/01/18 / #20180033921

Semiconductor illuminating device

A semiconductor illuminating device is disclosed. The device includes an led configured for emitting blue primary radiation and an led phosphor arranged and configured such that it emits secondary light that forms at least one component of the illumination light, wherein the led phosphor comprises a red phosphor for emitting red light as a component of the secondary light and a green phosphor for emitting green light as a component of the secondary light, wherein the green light has a color point located above a first straight line having a slope m1 and a y-intercept n1 in a cie standard chromaticity diagram, with the slope m1=1.189 and the y-intercept n1=0.226, and wherein the components of the illumination light are at such a ratio to one another that the illumination light has a color temperature of at most 5500 k.. ... Osram Opto Semiconductors

01/25/18 / #20180026421

Laser component

A laser component includes a housing, a laser chip arranged in the housing, and a conversion element for radiation conversion arranged in the housing wherein the conversion element is irradiatable with laser radiation of the laser chip. A method of producing such a laser component includes providing component parts of the laser component including a laser chip, a conversion element for radiation conversion and housing parts, and assembling the component parts of the laser component such that a housing is provided within which the laser chip and the conversion element are arranged, wherein the conversion element is irradiatable with laser radiation of the laser chip.. ... Osram Opto Semiconductors

01/25/18 / #20180026167

Optoelectronic component

An optoelectronic component is disclosed. In an embodiment the optical component includes an optoelectronic semiconductor chip including a radiation emission face, a deflection element configured to deflect electromagnetic radiation emitted by the optoelectronic semiconductor chip in a main emission direction which forms an angle deviating from 90° with the radiation emission face, wherein the deflection element is configured as a prism structure and an optical lens having an optical axis, wherein the optical axis forms an angle deviating from 90° with the radiation emission face.. ... Osram Opto Semiconductors

01/25/18 / #20180024185

Method and device for inspecting an optoelectronic component

A method and a device for inspecting an optoelectronic component are disclosed. In an embodiment, the method includes exciting at least one electromagnetic resonant circuit, formed by the at least one optoelectronic component and the connection board, such that the at least one optoelectronic component emits electromagnetic radiation, wherein exciting the electromagnetic resonant circuit comprises applying an electrical alternating voltage in the electromagnetic resonant circuit by generating a temporally variable electromagnetic alternating field by a first coil and a second coil, wherein the first coil and the second coil are movable with respect to the connection board.. ... Osram Opto Semiconductors

01/25/18 / #20180023782

Device for converting the wavelength of electromagnetic radiation

A device for converting the wavelength of electromagnetic radiation is disclosed. In an embodiment the device includes a carrier, a conversion layer configured to at least partly convert a wavelength of the electromagnetic radiation and an intermediate layer, wherein the conversion layer is connected to the carrier via the intermediate layer, and wherein the intermediate layer, at least in partial regions, includes a solid layer and a connection layer.. ... Osram Opto Semiconductors

01/18/18 / #20180019373

Optoelectronic semiconductor device and method for producing an optoelectronic semiconductor device

An optoelectronic semiconductor component is specified, comprising a multiplicity of radiation generating elements (14) arranged at a distance from one another on a surface (22) of a carrier element (20), wherein each of the radiation generating elements has a diameter of less than 10 μm in a direction perpendicular to the surface of the carrier element and adheres to the surface of the carrier element in the region of a respective connection location (26), and wherein the optoelectronic semiconductor component is free of a growth substrate (2).. . ... Osram Opto Semiconductors

01/18/18 / #20180019143

Bin insert for binning of light emitting devices, binning arrangement for binning of light emitting devices, and use of a binning arrangement for binning of light emitting devices

A bin insert for binning of light emitting devices comprises a hollow structural section (1). The hollow structural section (1) further comprises a top opening (13) and a bottom opening (14) at a top and a bottom end (11, 12) of the hollow structural section (1), respectively. ... Osram Opto Semiconductors

01/18/18 / #20180018940

Method of adapting emitted radiation from light-emitting diodes in pixels of a display apparatus, and display apparatus

A method of adapting emitted radiation from light-emitting diodes in pixels of a display apparatus, wherein the display apparatus has a multiplicity of pixels each arranged for adjustable emitted radiation of mixed light, the pixels each include at least two light-emitting diodes and, in operation, the light-emitting diodes emit in various colors so that the mixed light is composed of light of these light-emitting diodes, at least some of the pixels each include at least one light-emitting diode, which at least intermittently is operated as a photodetector and measures a brightness, by the measured brightness, an emittance of each of the affected light-emitting diodes or of the affected pixel is ascertained, and the light-emitting diodes are triggered in accordance with the ascertained emittance so that aging of the light-emitting diodes is at least partly compensated for.. . ... Osram Opto Semiconductors

01/11/18 / #20180013043

Optoelectronic semiconductor component, optoelectronic arrangement and method of producing an optoelectronic semiconductor component

An optoelectronic semiconductor component includes an optoelectronic semiconductor chip; and an electrical connection point that contacts the optoelectronic semiconductor chip, wherein the electrical connection point covers the optoelectronic semiconductor chip on the bottom thereof at least in some areas, the electrical connection point includes a contact layer facing toward the optoelectronic semiconductor chip, the electrical connection point includes at least one barrier layer arranged on a side of the contact layer facing away from the optoelectronic semiconductor chip, the electrical connection point includes a protective layer arranged on the side of the at least one barrier layer facing away from the contact layer, the layers of the electrical connection point are arranged one on top of another along a stack direction, and the stack direction runs perpendicular to a main extension plane of the optoelectronic semiconductor chip.. . ... Osram Opto Semiconductors

01/11/18 / #20180012801

Method for producing a plurality of semiconductor chips and semiconductor chip

According to the present disclosure, a method for producing a plurality of semiconductor chips is provided with the following steps: a) providing a composite assembly, including a carrier, a semiconductor layer sequence and a functional layer; b) severing the functional layer by means of coherent radiation along a singulation pattern; c) forming separating trenches in the carrier along the singulation pattern; and d) applying a protective layer, which delimits the functional layer toward the separating trenches, on in each case at least one side surface of the semiconductor chips to be singulated. The singulated semiconductor chips each includes a part of the semiconductor layer sequence, of the carrier and of the functional layer.. ... Osram Opto Semiconductors

01/04/18 / #20180006196

Optoelectronic semiconductor component and method for producing same

An optoelectronic semiconductor component and a method for producing the same are disclosed. In an embodiment the semiconductor component includes a semiconductor chip, which emits electromagnetic radiation of a first wavelength range from a radiation emission surface. ... Osram Opto Semiconductors

01/04/18 / #20180006193

Optoelectronic module and a process for the production of an optoelectronic module

An optoelectronic module (100) is defined, comprising at least one semiconductor chip (10) provided for emitting electromagnetic radiation and at least one holding device (20) which is adapted to fix in place a device (50) for encoding at least one optical or electronic parameter of the optoelectronic module (100). Furthermore, a process for the production of the optoelectronic module (100) is defined.. ... Osram Opto Semiconductors

01/04/18 / #20180005924

Lead frame and method of producing a chip housing

A lead frame used to produce a chip package includes a first lead frame section and a second lead frame section connected to one another by a bar, wherein the bar includes a first longitudinal section, a second longitudinal section and a third longitudinal section, the first longitudinal section adjoins the first lead frame section and the third longitudinal section adjoins the second lead frame section, the first longitudinal section and the third longitudinal section are oriented parallel to one another, the first longitudinal section and the second longitudinal section form an angle not equal to 180° and not equal to 90°, and the lead frame is planar.. . ... Osram Opto Semiconductors

12/28/17 / #20170373233

Lead frame

A lead frame is disclosed. In an embodiment, the lead frame includes a frame having a plurality of lead frame sections, wherein the lead frame sections are connected to the frame, wherein the frame has at least two longitudinal sides and at least two transverse sides, wherein at least in one longitudinal side includes an imprint, and wherein the imprint bolsters stability of the longitudinal side against sagging.. ... Osram Opto Semiconductors

12/28/17 / #20170373220

Optoelectronic component

An optoelectronic component is disclosed. In an embodiment the optoelectronic component includes an active zone configured to produce electromagnetic radiation, wherein the active zone has at least two quantum films, wherein the first quantum film is arranged between a first barrier layer and a second barrier layer, wherein the second quantum film is arranged between the second barrier layer and a last barrier layer, and wherein bandgaps of the first barrier layer and of the second barrier layer are related differently to one another than bandgaps of the second barrier layer and of the last barrier layer.. ... Osram Opto Semiconductors

12/21/17 / #20170365982

Edge-emitting semiconductor laser and method for operating a semiconductor laser

An edge-emitting semiconductor laser and a method for operating a semiconductor laser are disclosed. In an embodiment, the edge-emitting semiconductor laser includes an active zone within a semiconductor layer sequence and a stress layer. ... Osram Opto Semiconductors

12/21/17 / #20170365752

Conversion element, optoelectronic semiconductor device and method for producing conversion elements

Disclosed is a conversion element (100). The conversion element (100) comprises: a conversion coating (16), which contains a wavelength-converting conversion material; a first encapsulation coating (30) on a first main surface (20) of the conversion coating, said first encapsulation coating having a thickness of between 10 μm and 500 μm; and a second encapsulation coating (32) on a second main surface (22) of the conversion coating, said second encapsulation coating having a thickness of between 0.1 μm and 20 μm. ... Osram Opto Semiconductors

12/21/17 / #20170365751

Optoelectronic element and optoelectronic component

The invention relates to an optoelectronic element comprising a semiconductor chip (12) that emits a blue-green light (4) during operation and has at least one light passage surface (12a) through which the blue-green light (4) emitted during operation passes and comprising a conversion element (3) which comprises fluorescent particles (31), in particular fluorescent particles of only one type, and which is arranged on the light passage surface (12a) at least in some areas. The fluorescent particles (31) at least partly convert the blue-green light (4) into a red light (5), and the optoelectronic element emits a white mixed light (6) which contains non-converted components of the blue-green light (4) and components of the red light (5).. ... Osram Opto Semiconductors

12/21/17 / #20170365749

Optoelectronic arrangement having a radiation conversion element and method for producing a radiation conversion element

An optoelectronic arrangement having a radiation conversion element and a method for producing a radiation conversion element are disclosed. In an embodiment, an optoelectronic arrangement includes a semiconductor chip having an active region configured to generate radiation, a radiation conversion element arranged downstream of the semiconductor chip in an emission direction and a reflective polarization element arranged downstream of the radiation conversion element in the emission direction. ... Osram Opto Semiconductors

12/21/17 / #20170365736

Semiconductor chip, method for producing a plurality of semiconductor chips and method for producing an electronic or optoelectronic device and electronic or optoelectronic device

A method for producing a multiplicity of semiconductor chips (13) is provided, comprising the following steps: providing a wafer (1) comprising a multiplicity of semiconductor bodies (2), wherein separating lines (9) are arranged between the semiconductor bodies (2), depositing a contact layer (10) on the wafer (1), wherein the material of the contact layer (10) is chosen from the following group: platinum, rhodium, palladium, gold, and the contact layer (10) has a thickness of between 8 nanometres and 250 nanometres, inclusive, applying; the wafer (1) to a film (11), at least partially severing the wafer (1) in the vertical direction along the separating lines (9) or introducing fracture nuclei (12) into the wafer (1) along the separating lines (9), and breaking the wafer (1) along the separating lines (9) or expanding the film (11) such that a spatial separation of the semiconductor chips (13) takes place, wherein the contact layer (10) is also separated. A semiconductor chip, a component and a method for producing the latter are also provided.. ... Osram Opto Semiconductors

12/14/17 / #20170358719

Semiconductor layering sequence for generating visible light and light emitting diode

In at least one embodiment, the semiconductor layering sequence (1) is designed for generating light and comprises semiconductor columns (2). The semiconductor columns (2) have a respective core (21) made of a semiconductor material of a first conductivity type, and a core shell (23) surrounding the core (21) made of a semiconductor material of a second conductivity type. ... Osram Opto Semiconductors

12/14/17 / #20170358718

Optoelectronic semiconductor chip, method for producing an optoelectronic semiconductor chip, conversion element and phosphor for a conversion element

An optoelectronic semiconductor chip having a semiconductor body (1) that is suitable for emitting electromagnetic radiation in a first wavelength range from a radiation exit face (3) is specified. Furthermore, the semiconductor chip comprises a ceramic or monocrystalline conversion platelet (6) that is suitable for converting electromagnetic radiation in the first wavelength range into electromagnetic radiation in a second wavelength range, which is different from the first wavelength range, and a wavelength-converting joining layer (7) that connects the conversion platelet (6) to the radiation exit face (3), wherein the wavelength-converting joining layer (7) has luminescent material particles (4) that are suitable for converting radiation in the first wavelength range into radiation in a third wavelength range, which is different from the first wavelength range and the second wavelength range. ... Osram Opto Semiconductors

12/07/17 / #20170352700

Display device and method for producing a display device

A display device with a semiconductor layer sequence includes an active region provided for generating radiation and a plurality of pixels. The display device also includes a carrier. ... Osram Opto Semiconductors

12/07/17 / #20170352535

Method of producing an optoelectronic semiconductor chip and optoelectronic semiconductor chip

A method of producing an optoelectronic semiconductor chip includes in order: a) creating a nucleation layer on a growth substrate, b) applying a mask layer on to the nucleation layer, c) growing a coalescence layer, wherein the coalescence layer is grown starting from regions of the nucleation layer not covered by mask islands having a first main growth direction perpendicular to the nucleation layer so that ribs are formed, d) further growing the coalescence layer with a second main growth direction parallel to the nucleation layer to form a contiguous and continuous layer, e) growing a multiple quantum well structure on the coalescence layer, f) applying a mirror having metallic contact regions that impress current into the multiple quantum well structure and mirror islands for the total reflection of radiation generated in the multiple quantum well structure, and g) detaching the growth substrate and creating a roughening by etching.. . ... Osram Opto Semiconductors

11/30/17 / #20170345977

Conversion element and production method thereof

A method for the production of a conversion element (3) is disclosed, which comprises the following steps: a) provision of a first covering member (1) which has a first connecting surface (1a) and of a second covering member (2), b) insertion of at least one cavity (10) into the first covering member (1) on the first connecting surface (1a), c) filling of the at least one cavity (10) with a filling compound (30), which comprises a conversion material (31), d) applying of the second covering member (2) to the first connecting surface (1a) of the first covering member (1), e) cohesive connection of the first covering member (1) and of the second covering member (2).. . ... Osram Opto Semiconductors

11/30/17 / #20170345966

Method of producing a semiconductor body

A method of producing a semiconductor body includes providing a semiconductor wafer having at least two chip regions and at least one separating region arranged between the chip regions, wherein the semiconductor wafer includes a layer sequence, an outermost layer of which has at least within the separating region a transmissive layer transmissive to electromagnetic radiation, carrying out at least one of removing the transmissive layer within the separating region before starting a separation process with help of a laser, applying an absorbent layer within the separating region, wherein the absorbent layer remains in the separation region during a subsequent separation process with help of a laser, and increasing the absorption coefficient of the transmissive layer within the separating region, and subsequently separating the chip regions along the separating regions by a laser.. . ... Osram Opto Semiconductors

11/23/17 / #20170338626

Laser diode chip

A laser diode chip is described. In an embodiment the laser diode chip includes an n-type semiconductor region, a p-type semiconductor region and an active layer arranged between the n-type semiconductor region and the p-type semiconductor region, wherein the active layer is in the form of a single quantum well structure. ... Osram Opto Semiconductors

11/23/17 / #20170338384

Semiconductor device and method for producing a plurality of semiconductor devices

A semiconductor device and a method for producing a plurality of semiconductor devices are disclosed. In an embodiment an optoelectronic semiconductor device includes a semiconductor chip having a semiconductor layer sequence with an active region, a radiation exit surface arranged parallel to the active region and a plurality of side faces arranged obliquely or perpendicular to the radiation exit surface. ... Osram Opto Semiconductors

11/23/17 / #20170338217

Optoelectronic semiconductor chip and method for fabrication thereof

An optoelectronic semiconductor chip is disclosed. In an embodiment the optoelectronic semiconductor chip includes a first semiconductor layer sequence having a plurality of microdiodes, and a second semiconductor layer sequence having an active region. ... Osram Opto Semiconductors

11/23/17 / #20170337031

Optoelectronic lighting device, video wall module and signal transmitter for a light signaling installation

An optoelectronic lighting device includes a carrier, a plurality of light-emitting optoelectronic components arranged on an upper side of the carrier, and at least one layer of a hydrophobic aerogel that protects the plurality of light-emitting optoelectronic components from influences of moisture. A video wall module includes the optoelectronic light device. ... Osram Opto Semiconductors

11/16/17 / #20170331257

Light-emitting semiconductor chip and method for producing a semiconductor light-emitting chip

A light-emitting semiconductor chip (100) is provided, having a first semiconductor layer (1), which is at least part of an active layer provided for generating light and which has a lateral variation of a material composition along at least one direction of extent. Additionally provided is a method for producing a semiconductor chip (100).. ... Osram Opto Semiconductors

11/16/17 / #20170331019

Optoelectronic semiconductor component and method of producing an optoelectronic semiconductor component

An optoelectronic semiconductor component includes a carrier having a carrier top side and an opposing carrier underside, wherein the carrier top sides each have a larger area than the associated carrier undersides, the carrier parts fixedly connect to one another via at least one potting body and the potting body together with the carrier parts represents a bearing component of the semiconductor component so that all carrier undersides end flush with the potting body, the light-emitting semiconductor chips electrically connect in series, the metal layer on the carrier top side is structured into conductor tracks and into electrical connection surfaces, and the electrical connection surfaces on the carrier top side are electrically insulated from the associated carrier underside so that the carrier underside of the carrier part the semiconductor chips are arranged on is potential-free and is completely covered with the metal layer.. . ... Osram Opto Semiconductors

11/16/17 / #20170331018

Optoelectronic component and method for the production thereof

An optoelectronic component includes a composite body including a molded body; and an optoelectronic semiconductor chip embedded into the molded body, wherein the optoelectronic semiconductor chip includes a first electrical contact on its top side, a first top side metallization is arranged on the top side of the composite body and electrically conductively connects the first electrical contact to the through contact, a second top side metallization is arranged on the top side of the composite body and electrically insulated with respect to the first top side metallization, the second top side metallization completely delimits a part of the top side of the optoelectronic semiconductor chip, and a wavelength-converting material is arranged in a region completely delimited by the second top side metallization on the top side of the composite body, the wavelength-converting material extending as far as the second top side metallization.. . ... Osram Opto Semiconductors

11/16/17 / #20170331015

Optoelectronic component and illumination device

An optoelectronic component includes an optoelectronic semiconductor chip and an optical element, wherein the optical element includes a prism structure configured to split light emitted by the semiconductor chip into two beams and deflect the beams in a first direction relative to one another, and the optical element includes a beam deflecting structure configured to deflect both beams jointly in a second direction perpendicular to the first direction.. . ... Osram Opto Semiconductors

11/16/17 / #20170330997

Optoelectronic component and method for producing an optoelectronic component

An optoelectronic component and a method for producing an optoelectronic component are disclosed. In an embodiment the optoelectronic component includes a layer structure having an active zone for producing electromagnetic radiation, wherein the active zone is arranged in a first plane, wherein a recess is introduced into the surface of the layer structure, wherein the recess adjoins an end surface of the component, wherein the end surface is arranged in a second plane, wherein the second plane is arranged substantially perpendicularly to the first plane, wherein the recess has a bottom surface and a lateral surface wherein the lateral surface is arranged substantially perpendicularly to the end surface, wherein the lateral surface is arranged tilted at an angle not equal to 90° to the first plane of the active zone, and wherein the bottom surface is arranged in the region of the first plane of the active zone.. ... Osram Opto Semiconductors

11/16/17 / #20170330996

Semiconductor chip and method for producing a semiconductor chip

A semiconductor chip (100) is provided, having a first semiconductor layer (1), which has a lateral variation of a material composition along at least one direction of extent. Additionally provided is a method for producing a semiconductor chip (100).. ... Osram Opto Semiconductors

11/16/17 / #20170330981

Component and method for producing a component

A component with a semiconductor body, and first and second metal layer is disclosed. The first metal layer is arranged between the semiconductor body and the second metal layer, the semiconductor body has a first semiconductor layer on a side which is averted from the first metal layer, a second semiconductor layer on a side facing towards the first metal layer, and an active layer arranged between the first semiconductor layer and the second semiconductor layer, the component has a through-connection, which extends through the second semiconductor layer and the active layer for the electrical bonding of the first semiconductor layer. ... Osram Opto Semiconductors

11/16/17 / #20170330757

Method for producing a semiconductor chip and semiconductor chip

A method for producing a semiconductor chip (100) is provided, in which, during a growth process for growing a first semiconductor layer (1), an inhomogeneous lateral temperature distribution is created along at least one direction of extent of the growing first semiconductor layer (1), such that a lateral variation of a material composition of the first semiconductor layer (1) is produced. A semiconductor chip (100) is additionally provided.. ... Osram Opto Semiconductors

11/16/17 / #20170325729

Pulse oximetry device and method of operating a pulse oximetry device

A pulse oximetry device includes a light emission device configured to emit light with a wavelength in a first wavelength interval and light with a wavelength in a second wavelength interval, a first light detector configured to detect light with a wavelength in the first wavelength interval, but not to respond to light with a wavelength in the second wavelength interval, and a second light detector configured to detect light with a wavelength in the first wavelength interval and detect light with a wavelength in the second wavelength interval, wherein the first light detector has a first light reception surface, the second light detector has a second light reception surface, and the first light reception surface and the second light reception surface are arranged in a common plane and are interleaved with one another.. . ... Osram Opto Semiconductors

11/09/17 / #20170324012

Optoelectronic component and method of producing an optoelectronic component

An optoelectronic component includes a first lead frame section and a second lead frame section spaced apart from one another, and having an optoelectronic semiconductor chip arranged on the first lead frame section and the second lead frame section, wherein the first lead frame section and the second lead frame section respectively have an upper side, a lower side and a first side flank extending between the upper side and the lower side, a first lateral solder contact surface of the optoelectronic component is formed on the first side flank of the first lead frame section, and the first lateral solder contact surface is formed by a recess arranged on the first side flank of the first lead frame section and extends from the upper side to the lower side of the first lead frame section.. . ... Osram Opto Semiconductors

11/09/17 / #20170324005

Optoelectronic semiconductor chip

According to the present disclosure, optoelectronic semiconductor chip includes at least one n-doped semiconductor layer, at least one p-doped semiconductor layer and one active layer arranged between the at least one n-doped semiconductor layer and the at least one p-doped semiconductor layer. The p-doped semiconductor layer is electrically contacted by means of a first metallic connection layer, and a reflection-enhancing dielectric layer sequence is arranged between the p-doped semiconductor layer and the first connection layer, which dielectric layer sequence includes a plurality of dielectric layers with different refractive indices.. ... Osram Opto Semiconductors

11/09/17 / #20170324001

Light-emitting semiconductor chip

A semiconductor chip includes a semiconductor body with a semiconductor layer sequence. An active region intended for generating radiation is arranged between an n-conductive multilayer structure and a p-conductive semiconductor layer. ... Osram Opto Semiconductors

11/09/17 / #20170324000

Optoelectronic semiconductor chip and method for producing optoelectronic semiconductor chips

An optoelectronic semiconductor chip has a semiconductor body and a substrate on which the semiconductor body is disposed. The semiconductor body has an active region disposed between a first semiconductor layer of a first conductor type and a second semiconductor layer of a second conductor type. ... Osram Opto Semiconductors

11/09/17 / #20170323872

Optoelectronic component and method of producing same

An optoelectronic component includes a composite body including a molded body; and an optoelectronic semiconductor chip embedded into the molded body, wherein an electrically conductive through contact extends from a top side of the composite body to an underside of the composite body through the molded body, a top side of the optoelectronic semiconductor chip is at least partly not covered by the molded body, the chip includes a first electrical contact on its top side, a first top side metallization is arranged on the top side of the composite body and electrically conductively connects the first electrical contact to the through contact, the optoelectronic component includes an upper insulation layer extending over the first top side metallization, and the optoelectronic component includes a second top side metallization arranged above the upper insulation layer and electrically insulated with respect to the first top side metallization by the upper insulation layer.. . ... Osram Opto Semiconductors

10/26/17 / #20170310081

Semiconductor laser diode

A semiconductor laser diode is provided. In an embodiment the semiconductor laser diode includes a semiconductor layer sequence having semiconductor layers disposed vertically one above the other. ... Osram Opto Semiconductors

10/26/17 / #20170310079

Laser component and method of producing same

A laser component has a housing, which includes a carrier having a cavity with a bottom surface and a sidewall, wherein the cavity widens starting from the bottom surface, the side wall is inclined relative to the bottom surface by an angle different from 45°, a laser chip, an emission direction of which is oriented parallel to the bottom surface, is arranged on the bottom surface in the cavity, a reflective element is arranged in the cavity and bears on an edge between the bottom surface and the side wall, a reflective surface of the reflective element defines an angle with the bottom surface of the cavity, and the emission direction defines an angle of 45° with the reflective surface of the reflective element.. . ... Osram Opto Semiconductors

10/26/17 / #20170309794

Optoelectronic semiconductor chip and method for producing an optoelectronic semiconductor chip

In at least one embodiment, the optoelectronic semiconductor chip (100) comprises a semiconductor layer sequence (1) comprising a top side (2), a bottom side (3) diametrically opposite the top side (2), and an active layer (11) for generating electromagnetic radiation at a first wavelength (10), wherein the semiconductor chip (100) is free of a growth substrate for the semiconductor chip layer sequence (1). The semiconductor chip (100) further comprises a plurality of contact elements (30) which are arranged on the bottom side (3) and can be electronically controlled individually and independently from each other. ... Osram Opto Semiconductors

10/26/17 / #20170309777

Optoelectronic semiconductor chip comprising a multi-quantum well comprising at least one high barrier layer

An optoelectronic semiconductor chip including a multi-quantum well including at least one high barrier layer is disclosed. In an embodiment, the chip includes a p-type semiconductor region, an n-type semiconductor region and an active layer suitable for emission of radiation arranged between the p-type region and the n-type region, wherein the active layer is in the form of a multiple quantum well structure. ... Osram Opto Semiconductors

10/26/17 / #20170309481

Method for producing a plurality of semiconductor chips and semiconductor chip

A method for producing a plurality of semiconductor chips and a semiconductor chip are disclosed. The method includes applying a mask material on a growth surface of a growth substrate, wherein the growth surface includes sapphire, patterning the mask material into a multiply-connected mask layer by introducing openings into the mask material, wherein the growth surface is exposed at the bottom of at least some of the openings, applying a semiconductor layer sequence on the mask layer and on the growth surface and singulating at least the semiconductor layer sequence into the plurality of semiconductor chips, wherein each semiconductor chip includes lateral dimensions and the lateral dimensions are large compared to an average distance of the openings to the nearest opening.. ... Osram Opto Semiconductors

10/26/17 / #20170307177

Lighting assembly comprising a shutter that consists of a plurality of apertures

A light assembly includes a light source, and a micromechanical shutter arrangement having a two-dimensional arrangement of closable shutter openings, wherein at least one shutter opening has a rectangular shape with a length and a width, and the length is greater than the width. The light assembly may be configured as a headlamp for a motor vehicle.. ... Osram Opto Semiconductors

10/12/17 / #20170294428

Method of producing optoelectronic modules and an assembly having a module

A method produces a plurality of optoelectronic modules, and includes: a) providing a metallic carrier assembly with a plurality of carrier units; b) applying a logic chip, each having at least one integrated circuit, to the carrier units; c) applying emitter regions that generate radiation, which can be individually electrically controlled; d) covering the emitter regions and the logic chips with a protective material; e) overmolding the emitter regions and the logic chips so that a cast body is formed, which joins the carrier units, the logic chips and the emitter regions to one another; f) removing the protective material and applying electrical conductor paths to the upper sides of the logic chips and to a cast body upper side; and g) dividing the carrier assembly into the modules.. . ... Osram Opto Semiconductors

10/05/17 / #20170288108

Light-emitting diode device

An optoelectronic device includes a printed circuit board, and a light source arranged on a surface of the printed circuit board, said light source comprising at least one luminous face formed by at least one light-emitting diode wherein the light-emitting diode is electrically connected to the printed circuit board, wherein the light-emitting diode is at least partly enclosed by molding by a potting compound.. . ... Osram Opto Semiconductors

10/05/17 / #20170288094

Optoelectronic semiconductor component

Disclosed is an optoelectronic semiconductor component (1) comprising a semiconductor member (2) that has a succession of semiconductor layers including an active region (20) for generating radiation, a first semiconductor layer (21), and a second semiconductor layer (22). The active region is located between the first semiconductor layer and the second semiconductor layer; the semiconductor member has a plurality of cavities (25) which extend through the second semiconductor layer and the active region; and from a bird's eye view onto the semiconductor member, the cavities are elongate and have a longitudinal axis (250).. ... Osram Opto Semiconductors

09/28/17 / #20170279011

Method for producing a conversion lamina and conversion lamina

A method for producing at least one conversion lamina for a radiation-emitting semiconductor component is specified. In an embodiment, the conversion lamina includes a base material and a conversion substance embedded in the base material, wherein the conversion lamina has a thickness between 60 μm inclusive and 170 μm inclusive.. ... Osram Opto Semiconductors

09/28/17 / #20170278829

Optoelectronic semiconductor component and flashlight

Optoelectronic semiconductor component includes at least four different light sources each including at least one optoelectronic semiconductor chip, which during operation emit radiation having mutually different colour loci in the cie standard chromaticity diagram, wherein the semiconductor component is designed to emit white or coloured light having a variable correlated colour temperature during operation.. . ... Osram Opto Semiconductors

09/21/17 / #20170271553

Light emitting diode chip having temperature compensation of the wavelength

An optoelectronic semiconductor chip is disclosed. In an embodiment the optoelectronic semiconductor chip includes a p-type semiconductor region, an n-type semiconductor region, and an active layer arranged between the p-type semiconductor region and the n-type semiconductor region. ... Osram Opto Semiconductors

09/21/17 / #20170271438

Method of producing semiconductor chips

A method of producing a plurality of semiconductor chips includes a) providing a carrier substrate having a first major face and a second major face opposite the first major face; b) forming a diode structure between the first major face and the second major face, the diode structure electrically insulating the first major face from the second major face at least with regard to one polarity of an electrical voltage; c) arranging a semiconductor layer sequence on the first major face of the carrier substrate; and d) singulating the carrier substrate with the semiconductor layer sequence into a plurality of semiconductor chips.. . ... Osram Opto Semiconductors

09/21/17 / #20170271295

Electronic device and method for producing an electronic device

An electronic device and a method for producing an electronic device are disclosed. In an embodiment the electronic device includes a first component and a second component and a sinter layer connecting the first component to the second component, the sinter layer comprising a first metal, wherein at least one of the components comprises at least one contact layer which is arranged in direct contact with the sinter layer, which comprises a second metal different from the first metal and which is free of gold.. ... Osram Opto Semiconductors

09/14/17 / #20170264073

Method of producing a laser chip

A method of producing a laser chip includes providing a semiconductor wafer; creating a plurality of depressions arranged one behind another along a breaking direction on a top side of the semiconductor wafer, wherein 1) each depression includes a front boundary face and a rear boundary face successively in the breaking direction, 2) in at least one depression, the rear boundary face is inclined by an angle of 95° to 170° relative to the top side of the semiconductor wafer, 3) at least one depression includes a shoulder adjacent to the rear boundary face, and 4) the shoulder includes a shoulder face parallel to the top side of the semiconductor wafer and adjacent to the rear boundary face; and breaking the semiconductor wafer in the breaking direction at a breaking plane oriented perpendicularly to the top side of the semiconductor wafer and which runs through the depressions.. . ... Osram Opto Semiconductors

09/14/17 / #20170263836

Production of a device having a strip-type leadframe

A method of producing a device includes providing a strip-shaped leadframe, wherein the leadframe includes leadframe sections arranged in a row next to one another and connection structures connecting the leadframe sections, the connection structures each connecting two adjacent leadframe sections; forming molded bodies on the leadframe, the molded bodies each mechanically connecting two adjacent leadframe sections; arranging semiconductor chips on the leadframe; and interrupting the connections of the leadframe sections realized by the connection structures.. . ... Osram Opto Semiconductors

09/14/17 / #20170263830

Optoelectronic component

An optoelectronic component includes a carrier, and a light source arranged on a surface of the carrier, said light source including at least one luminous surface formed by at least one light-emitting diode, wherein a transparent converter-free spacer is arranged on the luminous surface such that a distance is formed between the luminous surface and a spacer surface of the spacer facing away from the luminous surface, and wherein the light source is potted by a potting compound such that the spacer surface is formed extending flush with a potting compound surface facing away from the surface of the carrier and a surface formed by a spacer surface and the potting compound surface is plane.. . ... Osram Opto Semiconductors

09/14/17 / #20170263829

Optoelectronic component

An optoelectronic component includes a carrier, a light source formed on the carrier, the light source having at least one luminous face formed by one or more light emitting diodes, wherein an at least partly transparent lamina is arranged on the luminous face, the lamina having a surface facing the luminous face and a surface facing away from the luminous face, wherein at least one conversion layer and a color scattering layer for generating a color by light scattering are arranged on at least one of the facing and facing-away surfaces, wherein the conversion layer is arranged upstream of the color scattering layer relative to an emission direction of light from the luminous face, such that light emitted by the luminous face can first be converted and then be scattered.. . ... Osram Opto Semiconductors

09/14/17 / #20170263825

Method for producing an optoelectronic component, and optoelectronic component

A method for producing an optoelectronic component and an optoelectronic component are disclosed. In an embodiment, the method includes arranging an optoelectronic semiconductor chip and a reflector on a top side of a carrier film, arranging a potting material in a region between the optoelectronic semiconductor chip and the reflector and forming a molded body, wherein the optoelectronic semiconductor chip, the reflector and the potting material are embedded into the molded body.. ... Osram Opto Semiconductors

09/07/17 / #20170256691

Optoelectronic component

An optoelectronic component includes a housing including a base section and a cover section that delimit an interior of the housing, wherein an optoelectronic semiconductor chip is arranged on the base section, the cover section is formed by an optical element, and a reflective element including openings is arranged between the optoelectronic semiconductor chip and an outer side of the optical element.. . ... Osram Opto Semiconductors

08/31/17 / #20170250323

Method of producing an optoelectronic semiconductor component

A method of producing an optoelectronic semiconductor component includes providing a semiconductor body; applying a photoconductive layer on a radiation exit surface of the semiconductor body, wherein the semiconductor body emits electromagnetic radiation during operation; exposing at least one sub-region of the photoconductive layer with electromagnetic radiation generated by the semiconductor body; and depositing a conversion layer on the sub-region of the photoconductive layer by an electrophoresis process.. . ... Osram Opto Semiconductors

08/24/17 / #20170243850

Electronic arrangement

An electronic arrangement comprising: a carrier; at least one connecting area on the carrier; at least one electronic component, which is fixed at least on the connecting area by a contact material; a covering area, which surrounds the connecting area on the carrier; and at least one covered region covered by a covering material; wherein the covering area is highly reflective with a reflectivity of greater than 70%, exposed regions on the connecting area and on the contact material are covered with the covering material, and the covering material is colored by titanium dioxide particles in such a way that the titanium dioxide particles are provided in the covering material in a proportion between 25 percent and 70 percent by weight, such that the covering material is highly reflective with a reflectivity of greater than 70% to minimize optical contrast between the covering area and the covered region.. . ... Osram Opto Semiconductors

08/17/17 / #20170236980

Optoelectronic semiconductor chip and method for producing the same

An optoelectronic semiconductor chip and a method for producing the same are disclosed. In an embodiment an optoelectronic semiconductor chip includes a support substrate, a semiconductor layer sequence having a first semiconductor region of a first conductivity type, a second semiconductor region of a second conductivity type and an active layer arranged therebetween, and a mirror layer arranged between the support substrate and the semiconductor layer sequence. ... Osram Opto Semiconductors

08/03/17 / #20170222105

Semiconductor device, illuminating device, and method of producing a semiconductor device

A semiconductor device includes a semiconductor chip including an active region provided to generate radiation; a radiation exit face extending parallel to a main plane of extension of the active region; a molding molded in places onto the semiconductor chip and that, at least in places, forms at least one side face of the semiconductor device; a mounting surface provided to mount the semiconductor device; and a spacer projecting beyond the radiation exit face in a vertical direction extending perpendicular to the radiation exit face.. . ... Osram Opto Semiconductors

08/03/17 / #20170222103

Optoelectronic component

An optoelectronic component includes a housing having a cavity in which an optoelectronic semiconductor chip having an emission face that emits light rays and a transparent potting material are arranged, wherein the cavity includes at least one side wall at least partly reflecting light rays incident on the side wall and reflectivity of which decreases as an operating period of the component increases, conversion particles are embedded into the potting material, which conversion particles convert light rays having a first wavelength incident on the conversion particles into light rays having a second wavelength, and scattering particles are embedded into the potting material, which scattering particles scatter light rays incident on the scattering particles and the scattering capability of which scattering particles increases as the operating period increases.. . ... Osram Opto Semiconductors

08/03/17 / #20170222094

Electronic component, optoelectronic component, component arrangement, and method for producing an electronic component

An electronic component, an optoelectronic component, a component arrangement, and a method for producing an electronic component are disclosed. In an embodiment, the method includes forming a sacrificial structure on a top side of a carrier by a photolithographic process from a photoresist layer, arranging an electronic semiconductor chip on the carrier after exposing the photoresist layer, molding a molded body around the sacrificial structure and around the electronic semiconductor chip such that a surface of the electronic semiconductor chip is at least partly not covered by the molded body, detaching the molded body from the carrier and removing the sacrificial structure, wherein removing the sacrificial structure results in a cutout being formed in the molded body.. ... Osram Opto Semiconductors

08/03/17 / #20170222092

Housing for an optical component, assembly, method for producing a housing and method for producing an assembly

A housing for an optical component is provided in various embodiments. The housing has a leadframe section and a mold compound. ... Osram Opto Semiconductors

08/03/17 / #20170222088

Optoelectronic semiconductor chip and method of producing the same

An optoelectronic semiconductor chip includes a semiconductor layer sequence and a carrier substrate, wherein the semiconductor layer sequence includes a first semiconductor region of a first conductivity type, a second semiconductor region of a second conductivity type and an active layer arranged between the first semiconductor region and the second semiconductor region, wherein the first semiconductor region faces the carrier substrate, the semiconductor layer sequence includes first recesses formed in the first semiconductor region and that do not separate the active layer, the semiconductor layer sequence includes second recesses that at least partially separate the first semiconductor region and the active layer, and the second recesses adjoin a first recess or are arranged between two first recesses.. . ... Osram Opto Semiconductors

08/03/17 / #20170222087

Optoelectronic component and method for the production thereof

An optoelectronic component and a method for the producing an optoelectronic component are disclosed. In an embodiment, the component comprises an active zone for generating electromagnetic radiation, wherein the active zone adjoins at least one layer arrangement of a semiconductor material, wherein the layer arrangement comprises at least two layers, wherein the two layers are formed in such a way that at an interface between the two layers a piezoelectric field is provided, the piezoelectric field configured to provide an electrical voltage drop at the interface, wherein a peak doping region is provided at the interface of the two layers in order to reduce the electrical voltage drop, wherein, in the direction away from the active zone, a doping of the peak doping region increases at least by a first percentage value and then decreases by at least a second percentage value, and wherein the first percentage value and the second percentage value are greater than 10% of a maximum doping of the peak doping region.. ... Osram Opto Semiconductors

08/03/17 / #20170221869

Method of producing optoelectronic component with integrated protection diode

A method of producing an optoelectronic component includes providing an optoelectronic semiconductor chip having a first surface on which a first electrical contact and a second electrical contact are arranged; arranging a protection diode on the first contact and the second contact; galvanically growing a first pin on the first electrical contact and a second pin on the second electrical contact; and embedding the first pin, the second pin, and the protection diode in a molded body.. . ... Osram Opto Semiconductors

08/03/17 / #20170219763

Optelectonic arrangement and lighting device

An optelectonic arrangement and a lighting device are disclosed. In an embodiment the arrangement includes a semiconductor chip for generating radiation and a radiation conversion element located downstream of the semiconductor chip with respect to a radiation direction, wherein the radiation conversion element includes a plurality of conversion bodies each with a longitudinal extension axis, and wherein a spatial orientation of the longitudinal extension axes has a preferred direction.. ... Osram Opto Semiconductors

07/20/17 / #20170207373

Optoelectronic semiconductor component and method for producing an optoelectronic semiconductor component

An optoelectronic semiconductor component and a method for producing an optoelectronic semiconductor component are disclosed. In an embodiment, the component includes a carrier, a multi-pixel semiconductor chip that emits electromagnetic radiation during operation, wherein the semiconductor chip is arranged on the carrier, and wherein the semiconductor chip has a plurality of individually activatable pixels capable of generating primary radiation and a wavelength conversion element for at least partially converting the primary radiation emitted from the semiconductor chip into electromagnetic secondary radiation, wherein an active zone of the multi-pixel semiconductor chip extends continuously over the plurality of pixels, and wherein the wavelength conversion element is implemented in one piece.. ... Osram Opto Semiconductors

07/20/17 / #20170207363

Method of producing optoelectronic semiconductor chips

A method of producing optoelectronic semiconductor chips includes growing a semiconductor layer sequence on a growth substrate; applying at least one metallization to a contact side of the semiconductor layer sequence, which contact side faces away from the growth substrate; attaching an intermediate carrier to the semiconductor layer sequence, wherein a sacrificial layer is attached between the intermediate carrier and the semiconductor layer sequence; removing the growth substrate from the semiconductor layer sequence; structuring the semiconductor layer sequence into individual chip regions; at least partially dissolving the sacrificial layer; and subsequently removing the intermediate carrier, wherein, in removing the intermediate carrier, part of the sacrificial layer is still present, removing the intermediate carrier includes mechanically breaking remaining regions of the sacrificial layer, and the sacrificial layer is completely removed after removing the intermediate carrier.. . ... Osram Opto Semiconductors

07/13/17 / #an electrical contact structure (10) for a semiconductor component (100) is specified, comprising a transparent electrically conductive contact layer (1), on which a first metallic contact layer (2) is applied, a second metallic contact layer (3), which completely covers the first metallic contact layer (2), and a separating layer (4), which is arranged between the transparent electrically conductive contact layer (1) and the second metallic contact layer (3) and which separates the second metallic contact layer (3) from the transparent electrically conductive contact layer (1).

Osram Opto Semiconductors Gmbh

. . ... Osram Opto Semiconductors

07/13/17 / #20170200875

Optoelectronic component and method of producing same

An optoelectronic component includes a carrier strip and an optoelectronic semiconductor chip, a first electrical connection surface formed on a front side of the chip and a second electrical connection surface is formed on a rear side of the chip, first and second electrically conductive contact regions are formed on the strip, the first region is arranged on a folding section of the strip, the rear side of the chip faces toward an upper side of the strip, the upper side faces toward the front side of the chip, the first electrical connection surface electrically conductively connects to the first region, the second electrical connection surface electrically conductively connects to the second region by a second connecting material, the strip has a second through-opening that lies next to the second region, and the second connecting material extends through the second contact opening to a lower side of the strip.. . ... Osram Opto Semiconductors

07/13/17 / #20170200869

Optoelectronic semiconductor component

An optoelectronic semiconductor component is disclosed. In an embodiment, the semiconductor component includes at least one optoelectronic semiconductor chip for generating primary radiation in a near-ultraviolet or in a visible spectral range, at least one phosphor for partial or complete conversion of the primary radiation into a longer-waved secondary radiation which is in the visible spectral range and at least one filter substance for partial absorption of the secondary radiation, wherein the phosphor and the filter substance are closely connected to the semiconductor chip.. ... Osram Opto Semiconductors

07/13/17 / #20170200861

Optoelectronic semiconductor chip

An optoelectronic semiconductor chip is disclosed. In an embodiment the chip includes a semiconductor layer sequence having a bottom face and a top face, wherein the semiconductor layer sequence comprises a first layer of a first conductivity type, an active layer for generating electromagnetic radiation, and a second layer of a second conductivity type and a bottom contact element located at the bottom face and a top contact element located at the top face for injecting current into the semiconductor layer sequence. ... Osram Opto Semiconductors

07/06/17 / #20170194536

Method of producing an optoelectronic component and optoelectronic component

A method of producing an optoelectronic component includes providing an optoelectronic semiconductor chip, selecting a wavelength-converting element in dependence on a dominant wavelength of an electromagnetic radiation that can be emitted by the optoelectronic semiconductor chip, and situating the selected wavelength-converting element in a beam path of the optoelectronic semiconductor chip to form an optoelectronic arrangement, wherein the wavelength-converting element is selected such that chromaticity coordinates of an electromagnetic radiation that can be emitted by the optoelectronic arrangement lie within a specified value range of chromaticity coordinates, a peak wavelength of a blue peak of the electromagnetic radiation that can be emitted by the optoelectronic arrangement lies within a specified value range of peak wavelengths, and the value range of peak wavelengths is 438 nm to 458 nm.. . ... Osram Opto Semiconductors

07/06/17 / #20170194305

Method for producing an optoelectronic semiconductor chip

A method for producing an optoelectronic semiconductor chip is disclosed. In an embodiment, the method includes providing a semiconductor body with a pixel region including different subpixel regions, each subpixel region having a radiation exit face, applying an electrically conductive layer onto the radiation exit face of a subpixel region, wherein the electrically conductive layer is suitable at least in part for forming a salt with a protic reactant, and depositing a conversion layer on the electrically conductive layer using an electrophoresis process, wherein the deposited conversion layer comprises pores.. ... Osram Opto Semiconductors

06/29/17 / #20170186911

Method for producing an optoelectronic semiconductor component, and optoelectronic semiconductor component

A method is specified for producing an optoelectronic semiconductor component, comprising the following steps: a) providing a structured semiconductor layer sequence (21, 22, 23) having —a first semiconductor layer (21) with a base region (21c), at least one well (211), and a first cover region (21a) in the region of the well (211) facing away from the base surface (21c), —an active layer (23), and —a second semiconductor layer (22) on a side of the active layer (23) facing away from the first semiconductor layer (21), wherein —the active layer (23) and the second semiconductor layer (22) are structured jointly in a plurality of regions (221, 231) and each region (221, 231) forms, together with the first semiconductor layer (21), an emission region (3), b) simultaneous application of a first contact layer (41) on the first cover surface (21a) and a second contact layer (42) on a second cover surface (3a) of the emission regions (3) facing away from the first semiconductor layer (21) in such a way that —the first contact layer (41) and the second contact layer (42) are electrically separated from each other, and —the first contact layer (41) and the second contact layer (42) run parallel to each other.. . ... Osram Opto Semiconductors

06/22/17 / #20170179353

Electronic component, leadframe, and method for producing an electronic component

An electronic component, a leadframe, and a method for producing an electronic component are disclosed. In an embodiment, the electronic component includes a housing and a leadframe section partly embedded in the housing, wherein the leadframe section includes a first quadrant, a second quadrant, a third quadrant and a fourth quadrant, wherein each of the quadrants has a first leadframe part and a second leadframe part, wherein each first leadframe part includes a chip landing area, wherein the chip landing areas of all four quadrants are arranged adjacently to a common central region of the leadframe section, and wherein the four quadrants are configured symmetrically with respect to one another.. ... Osram Opto Semiconductors

06/22/17 / #20170179091

Optoelectroic semiconductor chip and method of producing an optoelectronic semiconductor chip

An optoelectronic semiconductor chip includes a semiconductor layer sequence with an upper face and a lower face opposite the upper face, wherein the semiconductor layer sequence has an active layer that generates electromagnetic radiation, and a plurality of contact elements that electrically contact the semiconductor layer sequence arranged on the upper face, wherein the semiconductor chip is a thin-film semiconductor chip, the lower face is a radiation decoupling surface through which the radiation generated in the semiconductor layer sequence is decoupled, the contact elements can be electrically actuated individually and independently from one another, and the semiconductor layer sequence has a thickness of at most 3 μm.. . ... Osram Opto Semiconductors

06/22/17 / #20170179016

Carrier for an electrical component

A carrier for an electrical component, including a substrate having a surface, with an electrically conductive contact zone arranged on the surface of the substrate, a solder pad disposed on the contact zone, and a solder stop structure disposed laterally next to the solder pad. The solder stop structure has a surface that is less wettable with liquid solder than a surface of the contact zone. ... Osram Opto Semiconductors

06/15/17 / #20170170625

Semiconductor laser device and camera

Various embodiments may relate to a semiconductor laser device, including at least one laser diode, and at least one reflection surface which reflects diffusely and which is irradiated by the laser diode during operation, and an additional light-nontransmissive housing body having a cutout. The laser diode is the sole light source of the semiconductor laser device. ... Osram Opto Semiconductors

06/08/17 / #20170162749

Optoelectronic semiconductor chip and method of producing same

An optoelectronic semiconductor chip which is a light emitting diode includes a semiconductor layer sequence having an n-conducting layer sequence, a p-conducting layer sequence, an active zone, at least one etching signal layer, and an etching structure, wherein the etching structure extends at least right into the etching signal layer, the etching signal layer has a signal constituent, the active zone generates radiation and is based on inalgap or on inalgaas, the etching signal layer is situated in the p-conducting layer sequence and is based on in1−x−yalygaxp or on in1−x−yalygaxas where x+y<1, the signal constituent is ga and 0.005≦x≦0.2, the signal constituent is not present in the layer adjoining the etching signal layer in a direction toward the etching structure, a thickness of the etching signal layer is 50 nm to 800 nm.. . ... Osram Opto Semiconductors

06/08/17 / #20170160590

Backlighting device

In various embodiments, a backlighting device is provided. The backlighting device may include a plurality of semiconductor light sources arranged in a plane and serving for generating light radiation, and a side wall arranged laterally with respect to the semiconductor light sources, where the side wall is inclined with respect to the plane predefined by the semiconductor light sources, and wherein the side wall is retroreflective at a side which can be irradiated with light radiation of the semiconductor light sources.. ... Osram Opto Semiconductors

05/18/17 / #20170141265

Semiconductor chip and method for producing a semiconductor chip

A semiconductor chip and a method for producing a semiconductor chip are disclosed. In an embodiment, the semiconductor chip includes a semiconductor layer sequence and a structured substrate including a surface, wherein the surface is in contact with the semiconductor layer sequence, wherein the surface has a structure of depressions, each depression is delimited at an underside by a smooth end region, or wherein the surface has a structure of elevations, each elevation is delimited at a top side by a smooth end region, and wherein the end regions are laterally spaced apart with respect to one another.. ... Osram Opto Semiconductors

05/11/17 / #20170133566

Optoelectronic component and method for producing optoelectronic semiconductor components

What is specified is: an optoelectronic semiconductor component (1) comprising a carrier (5) and a semiconductor body (2), wherein the semiconductor body is fastened on the carrier and has a semiconductor layer sequence having an active region (20) provided for generating and/or receiving radiation, a first semiconductor layer (21) and a second semiconductor layer (22). The active region is arranged between the first semiconductor layer and the second semiconductor layer. ... Osram Opto Semiconductors

05/11/17 / #20170133561

Optoelectronic semiconductor device, method for producing an optoelectronic semiconductor device, and light source comprising an optoelectronic semiconductor device

An optoelectronic semiconductor device, a method for manufacturing an optoelectronic semiconductor device and light source having an optoelectronic semiconductor device are disclosed. In an embodiment, an optoelectronic semiconductor device includes a light-emitting diode component having at least one light-emitting diode chip and a top face, the top face arranged downstream of the light-emitting diode chip in an emission direction, wherein the light-emitting diode component further includes a molding and connection points, a conversion element arranged downstream of the light-emitting diode component in the emission direction, the conversion element includes wavelength-converting quantum dots, a frame member enclosing all side faces of the conversion element in a frame-like manner and a cover member arranged downstream of the conversion element in the emission direction, the cover member including a radiation-transmissive material, wherein the cover member covers the conversion element at a top face remote from the light-emitting diode chip.. ... Osram Opto Semiconductors

05/11/17 / #20170133555

Method for separating regions of a semiconductor layer

The invention relates to a method for separating regions of a semiconductor layer and for introducing an outcoupling structure into an upper side of the semiconductor layer, the outcoupling structure being provided to couple light out of the semiconductor layer. The upper side of the semiconductor layer is covered by a mask having first openings for introducing the outcoupling structure and at least a second opening, which is provided to introduce a separating trench into the semiconductor layer. ... Osram Opto Semiconductors

05/04/17 / #20170125648

Method for producing a plurality of conversion elements, conversion element and optoelectronic component

A method for producing a plurality of conversion elements (10) is specified, comprising providing a carrier substrate (1), introducing a converter material (3) into a matrix material (2), applying the matrix material (2) with the converter material (3) to individual regions (8) of the carrier substrate (1) in a non-continuous pattern, applying a barrier substrate (5) to the matrix material (2) and to the carrier substrate (1), and singulating the carrier substrate (1) with the matrix material (2) and the barrier substrate (5) into a plurality of conversion elements (10) along singulation lines (v), wherein the conversion elements (10) in each case comprise at least one of the regions (8) of the matrix material (2).. . ... Osram Opto Semiconductors

05/04/17 / #20170125646

Optoelectronic device

The invention relates to an optoelectronic component (10) comprising—a radiation-emitting semiconductor chip (2), —a conversion element (8) which is suitable for converting at least one part of the radiation (12) emitted by the semiconductor chip (2) into a converted radiation (13), said converted radiation (13) having a longer wavelength than the emitted radiation (12), and—a cover (9) which is permeable at least to the converted radiation (13) and which follows the conversion element (8) in a main emission direction, wherein—the conversion element (8) comprises a quantum dot converter material (7), —the conversion element (8) is arranged on a cover (9) inner face (15) facing the semiconductor chip, and—the cover has silicon (9) or consists of silicon.. . ... Osram Opto Semiconductors

05/04/17 / #20170125643

Light emitting semiconductor device

A light emitting semiconductor device includes at least one light emitting semiconductor chip having a semiconductor layer sequence, a light outcoupling surface, a rear face on an opposite side of the semiconductor layer sequence from the light outcoupling surface, and side faces which connect the light outcoupling surface and the rear face. The light emitting semiconductor device further includes a carrier body, having a molded body which covers the side faces of the at least one light emitting semiconductor chip directly and in a positively-locking manner. ... Osram Opto Semiconductors








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