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Plansee Se patents


Recent patent applications related to Plansee Se. Plansee Se is listed as an Agent/Assignee. Note: Plansee Se may have other listings under different names/spellings. We're not affiliated with Plansee Se, we're just tracking patents.

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Tubular target

A target for a cathode sputtering system has a tubular target body made of a sputtering material and at least one connector piece, which is connected to the target body and projects from the target body, for attaching the target body to the cathode sputtering system. The target body is connected to the at least one connector piece in a vacuum-tight manner and the two are rotationally fixed relative to one another. ... Plansee Se

Connector piece for a tubular target

A connection piece for a tubular target which has a cylindrical inner surface and a cylindrical outer surface and at least one magnetic insert. The position of the magnetic insert is adjustable along the axial direction of the connection piece on at least an inner surface or outer surface of the connection piece.. ... Plansee Se

X-ray anode

An x-ray anode for generating x-radiation includes a carrier body and a first emission layer and at least one second emission layer, which generate x-radiation when they are impinged by electrons. The emission layers are separated by an intermediate layer on one side of the carrier body and are arranged a distance apart in a central direction of the x-ray anode.. ... Plansee Se

Metallization for a thin-film component, process for the production thereof and sputtering target

A metallization for a thin-film component includes at least one layer composed of an mo-based alloy containing al and ti and usual impurities. A process for producing a metallization includes providing at least one sputtering target, depositing at least one layer of an mo-based alloy containing al and ti and usual impurities, and structuring the metallization by using at least one photolithographic process and at least one subsequent etching step. ... Plansee Se

Crucible for growing crystals

Crucible for growing single crystals, formed from w, mo, re, an alloy or a base alloy of these metals, and a process for producing a crucible (2), wherein at least part of an outwardly facing outer face (4) of the crucible (2) has, at least in certain regions, a profile with a mean profile depth (a) of between 5 and 500 μm.. . ... Plansee Se

Process for producing a component

A method of producing a component from refractory metal or a refractory metal alloy having a refractory metal content >50 at %. The process includes the steps of providing a powder formed of particles and solidifying the powder under the action of a laser beam or electron beam. ... Plansee Se

Process for producing a layer

A process for producing a layer or a body built up of layers. A process gas which has a pressure of >10 bar is accelerated in a convergent-divergent nozzle and a coating material which is formed by particles and is composed of mo, w, an mo-based alloy or a w-based alloy is injected into the process gas. ... Plansee Se

W-ni sputtering target

A sputtering target contains 45 to 75 wt % w and a remainder of ni and common impurities. The sputtering target contains a ni(w) phase, a w phase and no or less than 10% intermetallic phases. ... Plansee Se

Coating material

A coating material has cr-rich regions having a cr content >95% by mass which form cr-containing particles. At least some of these particles are present in the form of aggregates or agglomerates, at least some have pores and have in the cr-rich regions a mean nanohardness hit 0.005/5/1/5 of ≦4 gpa and/or a mean surface area, measured by bet, >0.05 m2/g. ... Plansee Se








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